An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The memory storage of claim 1 wherein the surface atoms are silicon atoms.
3. The memory storage of claim 1 wherein the surface atoms are at least one of: germanium, diamond, graphite, graphene, GaAs, InSb, transition metal chalcogenide, and thin insulator-on-conductor, and thin insulator-on-semiconductor.
4. The memory storage of claim 1 wherein the covalent bonds are only formed with hydrogen.
5. The memory storage of claim 1 wherein a unit of rewriteable memory ranges from 8-bit to 192-bit inclusive.
6. The memory storage of claim 1 wherein the bit density is 1 to 25 bits per nanometers squared or greater in at least one region of the memory storage.
8. The memory storage of claim 7 wherein the surface atoms are silicon atoms.
9. The memory storage of claim 7 wherein the surface atoms are at least one of: germanium, diamond, graphite, graphene, GaAs, InSb, transition metal chalcogenide, and thin insulator-on-conductor, and thin insulator-on-semiconductor.
10. The memory storage of claim 7 wherein the covalent bonds are only formed with hydrogen.
11. The memory storage of claim 7 wherein a unit of rewriteable memory ranges from 8-bit to 192-bit inclusive.
12. The memory storage of claim 7 wherein the bit density is 1 to 25 bits per nanometers squared or greater in at least one region of the memory storage.
14. The method of claim 13 wherein the covalent bonds are silicon atoms.
15. The method of claim 13 wherein the covalent bonds are between one of the surface atoms and hydrogen.
16. The method of claim 13 wherein the imaging is performed by scanning tunneling microscopy.
17. The method of claim 13 further comprising selectively forming a covalent bond from a DB by repassivation.
18. The method of claim 17 wherein said repassivation is automated.
19. The method of claim 18 wherein automated repassivation is accomplished by any of an AFM-tip apex functionalized, an STM tip apex functionalized, an STM non-apex tip region functionalized, a probe-free molecular method, or a combination thereof.
20. The method of claim 13 wherein said lithography is automated.
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November 28, 2022
April 9, 2024
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