A semiconductor structure includes a substrate including a base and a plurality of fins discretely formed over the base. Each fin is made of a material including a first atom and contains openings therein. The semiconductor structure also includes a source-drain doped layer located in each opening and including a seed layer on a surface of an inner wall of the opening and a body layer on a surface of the seed layer. A material of the seed layer includes the first atom, a second atom, and a third atom. A material of the body layer includes the first atom and the second atom.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The semiconductor structure of claim 1, wherein the first atom includes a silicon atom, and the second atom includes a phosphorus atom.
3. The semiconductor structure of claim 1, wherein a concentration percentage of the third atom in the seed layer is less than a concentration percentage of the first atom in the seed layer, and is less than a concentration percentage of the second atom in the seed layer.
4. The semiconductor structure of claim 3, wherein a concentration percentage of the second atom in the body layer is greater than the concentration percentage of the second atom in the seed layer.
5. The semiconductor structure of claim 1, wherein a thickness of the seed layer ranges from 2 nanometers to 8 nanometers from the surface of the inner wall of the opening.
6. The semiconductor structure of claim 1, wherein a maximum width of the source-drain doped layer is 45 nanometers in a direction perpendicular to an extending direction of the plurality of fins.
7. The semiconductor structure of claim 1, wherein a maximum height of the source-drain doped layer is 60 nanometers, the maximum height of the source-drain doped layer being a vertical distance from a bottom of the source-drain doped layer to a top of source-drain doped layer.
10. The manufacturing method of claim 9, wherein the first atom includes a silicon atom, and the second atom includes a phosphorus atom.
15. The manufacturing method of claim 9, wherein a concentration percentage of the third atom in the seed layer is less than a concentration percentage of the first atom in the seed layer, and is less than a concentration percentage of the second atom in the seed layer.
16. The manufacturing method of claim 15, wherein a concentration percentage of the second atom in the body layer is greater than the concentration percentage of the second atom in the seed layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 16, 2021
April 16, 2024
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