Described herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition including:
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2. The composition according to claim 1, wherein the polyvinylpyrrolidone is present in an amount of from 0.2% to about 3% by weight.
3. The composition according to claim 1, wherein the pH of the composition is of from 1 to 5.
4. The composition according to claim 1, wherein the peroxide is selected from the group consisting of hydrogen peroxide, peroxyacetic acid, and a combination thereof.
5. The composition according to claim 1, wherein the peroxide is a peroxyacetic acid mixture prepared by mixing and having reacted acetic acid, hydrogen peroxide and a strong inorganic acid.
6. The composition according to claim 1, wherein the total amount of the peroxide is of from 0.1 to about 1.5 mol/l.
7. The composition according to claim 1, wherein the etchant is present in an amount of from 0.01 to about 0.5 mol/l.
8. The composition according to claim 1, further comprising ammonia.
9. The composition according to claim 8, wherein the weight ratio of the ammonia to the etchant is of from 2:1 to 4:1.
10. The composition according to claim 1, further comprising a polylysine.
11. The composition according to claim 1, wherein the silicon-containing layer comprises a Si, SiOx, SiON, SiN, or a combination thereof.
12. The composition according to claim 1, wherein the pH of the composition is of from 2 to 4.5.
13. The composition according to claim 1, wherein the total amount of the peroxide is of from 0.2 to about 1.0 mol/l.
14. The composition according to claim 1, wherein the etchant is hydrogen fluoride.
15. The composition according to claim 1, further comprising ammonia in an amount of from 0.02 to about 2.0 mol/l.
16. A method of using the composition according to claim 1, the method comprising using the composition for selectively etching a layer comprising SiGe in the presence of a silicon-containing layer.
18. A process for the manufacture of a semiconductor device, comprising the step of selectively removing silicon-germanium from a surface of a microelectronic device relative to a silicon-containing material according to claim 17.
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June 19, 2020
April 30, 2024
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