Patentable/Patents/US-11990334
US-11990334

Method for tuning stress transitions of films on a substrate

PublishedMay 21, 2024
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

The disclosure relates to a method for tuning stress transitions of films on a substrate. The method includes forming a stress-adjustment layer on the substrate, wherein the stress-adjustment layer includes first regions formed of a first material and second regions formed of a second material, wherein the first material includes a first internal stress and the second material includes a second internal stress, and wherein the first internal stress is different compared to the second internal stress; and forming transition regions between the first regions and the second regions, wherein the transition regions include an interface between the first material and the second material that has a predetermined slope that is greater than zero degrees and less than 90 degrees.

Patent Claims
6 claims

Legal claims defining the scope of protection, as filed with the USPTO.

4

4. The method of claim 3, wherein the first material has a different internal stress as compared to the third material.

5

5. The method of claim 1, wherein changing the solubility of the second layer includes creating a second transition region defining a second predetermined vertical acid diffusion length across the second transition region.

8

8. The method of claim 1, wherein creating the transition region defining the predetermined vertical acid diffusion length is based on a desired stress transition for the transition region.

10

10. The method of claim 1, wherein the predetermined physical slope is selected based on a design stress transition.

13

13. The method of claim 12, further comprising forming transition regions of different interface physical slopes based on a coordinate location on the substrate.

15

15. The method of claim 12, wherein the first internal stress is a compressive stress, and the second internal stress is a tensile stress.

Classification Codes (CPC)

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Patent Metadata

Filing Date

July 7, 2020

Publication Date

May 21, 2024

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Cite as: Patentable. “Method for tuning stress transitions of films on a substrate” (US-11990334). https://patentable.app/patents/US-11990334

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