In embodiments, an optoelectronic device comprises a substrate formed of magnesium oxide, and a multi-region stack epitaxially deposited upon the substrate. The multi-region stack may comprise a non-polar crystalline material structure along a growth direction, or may comprise a crystal polarity having an oxygen-polar crystal structure or a metal-polar crystal structure along the growth direction. In some cases, at least one region of the multi-region stack is a bulk semiconductor material comprising Mg(x)Zn(1-x)O. In some cases, at least one region of the multi-region stack is a superlattice comprising MgO and Mg(x)Zn(1-x)O.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The optoelectronic device of claim 1, wherein at least one of the second region or the fourth region is formed by introducing at least one of silicon, germanium, nitrogen, aluminum, gallium, nickel or phosphorous into the non-polar crystalline material structure.
4. The optoelectronic device of claim 1, wherein the multi-region stack consists of Mg(x)M(1-X)O compositions, where 0.55<x≤1.0, and M is selected from Zn, Al, Ga, Ni, N, and P.
5. The optoelectronic device of claim 1, further comprising a buffer layer between the substrate and the first region.
6. The optoelectronic device of claim 5, wherein the buffer layer is made of MgZnO.
7. The optoelectronic device of claim 1, wherein the first region comprises the superlattice formed of a plurality of alternating sub-layers of the MgO and the Mg(x)Zn(1-x)O.
9. The optoelectronic device of claim 8, wherein at least one of the second region or the fourth region is formed by introducing at least one of silicon, germanium, nitrogen, aluminum, gallium, nickel, or phosphorous into the oxygen-polar crystal structure or the metal-polar crystal structure.
10. The optoelectronic device of claim 8, wherein at least one of the second region or the fourth region is formed using compositional grading of the Mg(x)Zn(1-x)O of the bulk semiconductor material in which x is spatially dependent and varies along the growth direction.
12. The optoelectronic device of claim 11, wherein the compositional grading comprises alternating sub-layers of Mg(x)Zn(1-x)O and Mg(y)Zn(1-y)O, where x and y change along the growth direction.
13. The optoelectronic device of claim 8, further comprising a buffer layer between the substrate and the first region.
14. The optoelectronic device of claim 13, wherein the buffer layer is made of MgZnO.
15. The optoelectronic device of claim 8, wherein the first region comprises the superlattice formed of a plurality of alternating sub-layers of the MgO and the Mg(x)Zn(1-x)O.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 9, 2023
May 21, 2024
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.