There is provided a semiconductor device including: a semiconductor substrate that has an upper surface and a lower surface and that is provided with a drift region of a first conductivity type; a trench portion that is provided to reach the drift region from the upper surface of the semiconductor substrate; and a mesa portion that is interposed between trench portions, in which the mesa portion has a base region of a second conductivity type that is provided between the drift region and the upper surface, and a first region that has a concentration peak of a hydrogen chemical concentration at a first depth position in the mesa portion.
Legal claims defining the scope of protection, as filed with the USPTO.
13. The semiconductor device according to claim 1, wherein a portion of the base region includes hydrogen, the portion being in contact with the adjacent two trench portions.
14. The semiconductor device according to claim 1, wherein the first region has the concentration peak below the contact hole.
15. The semiconductor device according to claim 1, wherein the hydrogen chemical concentration at the first depth position is substantially uniform.
30. The semiconductor device according to claim 16, wherein a portion of the base region includes hydrogen, the portion being in contact with the adjacent two trench portions.
31. The semiconductor device according to claim 16, wherein the first region has the concentration peak below the contact hole.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 13, 2021
May 28, 2024
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