A solid-state imaging device includes a first semiconductor substrate, an isolation region, a charge holding section, and a charge accumulation section. The first semiconductor substrate is a substrate in which a photoelectric converter is provided for each of unit regions. The isolation region is provided to run through the first semiconductor substrate in a thickness direction and electrically isolates the unit regions from each other. The charge holding section is electrically coupled to the photoelectric converter and configured to receive signal charge from the photoelectric converter. The charge accumulation section is shared by two or more of the unit regions and is a section to which the signal charge is transferred from the photoelectric converter and the charge holding section of each of the unit regions sharing the charge accumulation section.
Legal claims defining the scope of protection, as filed with the USPTO.
3. The solid-state imaging device according to claim 2, wherein the transfer transistor is for each of the plurality of unit regions.
5. The solid-state imaging device according to claim 4, wherein the charge holding section includes the impurity diffusion region having a comb-like plan shape.
6. The solid-state imaging device according to claim 1, wherein the charge accumulation section is shared by two unit regions of the plurality of unit regions.
7. The solid-state imaging device according to claim 1, wherein the charge accumulation section is shared by four unit regions of the plurality of unit regions.
8. The solid-state imaging device according to claim 1, wherein the charge holding section is for each unit region of the plurality of unit regions.
9. The solid-state imaging device according to claim 1, wherein the at least two unit regions of the plurality of unit regions sharing the charge accumulation section share the charge holding section.
10. The solid-state imaging device according to claim 1, further comprising an output transistor electrically coupled to the charge accumulation section.
11. The solid-state imaging device according to claim 10, further comprising a second semiconductor substrate comprising the output transistor, wherein the second semiconductor substrate is on the first semiconductor substrate.
13. The solid-state imaging device according to claim 12, wherein the light receiving lens is over at least two unit regions of the plurality of unit regions sharing the charge accumulation section.
14. The solid-state imaging device according to claim 1, further comprising phase-difference detection pixels, wherein the charge accumulation section is for each of the phase-difference detection pixels.
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May 27, 2020
June 11, 2024
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