A solid-state imaging device includes a first semiconductor substrate, an isolation region, a charge holding section, and a charge accumulation section. The first semiconductor substrate is a substrate in which a photoelectric converter is provided for each of unit regions. The isolation region is provided to run through the first semiconductor substrate in a thickness direction and electrically isolates the unit regions from each other. The charge holding section is electrically coupled to the photoelectric converter and configured to receive signal charge from the photoelectric converter. The charge accumulation section is shared by two or more of the unit regions and is a section to which the signal charge is transferred from the photoelectric converter and the charge holding section of each of the unit regions sharing the charge accumulation section.
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3. The solid-state imaging device according to claim 2, wherein the transfer transistor is for each of the plurality of unit regions.
A solid-state imaging device includes an array of unit regions, each containing a photodiode for converting incident light into an electrical signal. The device also features a transfer transistor associated with each unit region to control the transfer of the generated electrical signal from the photodiode to a floating diffusion node. The floating diffusion node is connected to a reset transistor that resets the node to a reference voltage and an amplification transistor that amplifies the signal for readout. The device further includes a selection transistor that selectively outputs the amplified signal from each unit region. The transfer transistor for each unit region ensures independent control of signal transfer, allowing for precise and efficient readout of the electrical signals generated by the photodiodes. This configuration improves signal integrity and reduces noise, enhancing the overall performance of the imaging device. The device is particularly useful in applications requiring high-resolution imaging with low noise and high sensitivity, such as digital cameras, medical imaging, and scientific instrumentation.
5. The solid-state imaging device according to claim 4, wherein the charge holding section includes the impurity diffusion region having a comb-like plan shape.
A solid-state imaging device includes a charge holding section with an impurity diffusion region shaped like a comb in plan view. This design improves charge storage efficiency and reduces noise in the imaging device. The charge holding section is part of a pixel structure that accumulates and transfers charge generated by incident light. The comb-like shape of the impurity diffusion region enhances charge holding capacity while maintaining a compact layout. This configuration is particularly useful in back-illuminated CMOS image sensors, where efficient charge handling is critical for high-performance imaging. The impurity diffusion region is doped to create a potential well that traps and holds charge until readout. The comb-like structure increases the surface area of the region, allowing for greater charge storage without increasing the pixel size. This design also minimizes dark current and other noise sources, improving image quality. The charge holding section is integrated with a transfer gate that controls charge transfer from a photodiode to the holding region. The comb-like shape ensures uniform charge distribution and reduces the risk of charge leakage. This innovation is valuable for applications requiring high sensitivity and low noise, such as medical imaging, astronomy, and high-end digital cameras. The overall structure optimizes charge handling while maintaining a small pixel footprint.
6. The solid-state imaging device according to claim 1, wherein the charge accumulation section is shared by two unit regions of the plurality of unit regions.
A solid-state imaging device includes an array of unit regions, each containing a photoelectric conversion element that generates charge in response to incident light. The device also has a charge accumulation section that collects and stores the generated charge. In this configuration, a single charge accumulation section is shared by two adjacent unit regions, reducing the overall area required for charge storage. This shared charge accumulation section allows for a more compact pixel design, improving spatial resolution and light sensitivity while minimizing device footprint. The shared structure also simplifies the readout process by consolidating charge from multiple photoelectric conversion elements into a single accumulation section before transfer to an output circuit. This design is particularly useful in high-resolution imaging applications where pixel density is critical, as it enables efficient charge handling without sacrificing performance. The shared charge accumulation section may be implemented using a floating diffusion node or a similar charge storage element, ensuring reliable charge transfer and readout. The overall architecture enhances imaging performance by optimizing pixel layout and reducing parasitic capacitance, leading to improved signal-to-noise ratio and dynamic range.
7. The solid-state imaging device according to claim 1, wherein the charge accumulation section is shared by four unit regions of the plurality of unit regions.
A solid-state imaging device includes an array of unit regions, each containing a photoelectric conversion element that generates charge in response to incident light. The device also has a charge accumulation section that collects and accumulates charge from the photoelectric conversion elements. In this configuration, a single charge accumulation section is shared by four adjacent unit regions, allowing multiple photoelectric conversion elements to transfer their charge to the same accumulation section. This shared charge accumulation design reduces the overall area required for charge storage, enabling higher pixel density and improved spatial resolution in the imaging device. The shared charge accumulation section may be connected to each of the four unit regions via transfer gates or other charge transfer mechanisms, ensuring efficient charge collection from multiple photoelectric conversion elements. This approach optimizes the layout of the imaging device, minimizing dead space between pixels and enhancing light sensitivity. The device may be used in digital cameras, smartphones, or other imaging applications where high-resolution imaging is required.
8. The solid-state imaging device according to claim 1, wherein the charge holding section is for each unit region of the plurality of unit regions.
A solid-state imaging device captures images by converting light into electrical signals. A common challenge in such devices is efficiently managing and transferring charge generated by photodiodes to ensure accurate image capture. This invention addresses this problem by incorporating a charge holding section that temporarily stores charge from photodiodes before transferring it to a floating diffusion node for readout. The charge holding section is implemented for each unit region within the imaging device, where each unit region corresponds to a pixel or a group of pixels. This design allows for precise control over charge transfer, reducing noise and improving image quality. The charge holding section may be a capacitor or another charge storage element integrated into the pixel circuitry. By assigning a dedicated charge holding section to each unit region, the device ensures that charge is held and transferred efficiently, minimizing losses and distortions. This approach enhances the dynamic range and sensitivity of the imaging device, making it suitable for high-performance applications such as digital cameras, medical imaging, and scientific instruments. The invention improves upon traditional designs by providing a more reliable and scalable solution for charge management in solid-state imaging devices.
9. The solid-state imaging device according to claim 1, wherein the at least two unit regions of the plurality of unit regions sharing the charge accumulation section share the charge holding section.
A solid-state imaging device includes multiple unit regions, each containing a photoelectric conversion element and a charge accumulation section. The device is designed to address challenges in high-sensitivity imaging, such as noise reduction and efficient charge handling. In this configuration, at least two unit regions share a single charge accumulation section, allowing for combined charge collection from multiple photoelectric conversion elements. Additionally, these unit regions also share a charge holding section, which temporarily stores accumulated charge before transfer. This shared architecture reduces the number of components, minimizes spatial constraints, and improves charge transfer efficiency. The shared charge holding section ensures that charge from multiple unit regions is managed collectively, enhancing signal integrity and reducing noise. This design is particularly useful in low-light conditions, where maximizing charge collection and minimizing noise are critical. The shared charge accumulation and holding sections streamline the imaging process, making the device more compact and efficient while maintaining high sensitivity and performance.
10. The solid-state imaging device according to claim 1, further comprising an output transistor electrically coupled to the charge accumulation section.
A solid-state imaging device includes a charge accumulation section that collects and stores electrical charge generated by incident light. The device further includes an output transistor electrically coupled to the charge accumulation section. The output transistor converts the accumulated charge into an electrical signal, which can be processed to produce an image. The charge accumulation section may be part of a pixel structure, where each pixel contains a photodetector, such as a photodiode, that generates charge in response to light. The output transistor amplifies the charge signal, improving signal-to-noise ratio and enabling efficient readout. This configuration enhances the device's sensitivity and dynamic range, making it suitable for high-performance imaging applications. The output transistor may be a field-effect transistor (FET) that operates in a linear or saturation region to provide a proportional output signal. The device may also include additional components, such as reset transistors or transfer gates, to control charge accumulation and readout. The integration of the output transistor directly with the charge accumulation section simplifies the pixel architecture and improves overall imaging performance.
11. The solid-state imaging device according to claim 10, further comprising a second semiconductor substrate comprising the output transistor, wherein the second semiconductor substrate is on the first semiconductor substrate.
A solid-state imaging device includes a first semiconductor substrate with a pixel array and a second semiconductor substrate stacked on top of the first substrate. The pixel array contains multiple pixels, each with a photoelectric conversion element that converts light into an electrical signal. The device also includes a transfer transistor that transfers the electrical signal from the photoelectric conversion element to a floating diffusion node, and an amplification transistor that amplifies the signal from the floating diffusion node. The second semiconductor substrate contains an output transistor that outputs the amplified signal from the amplification transistor. The stacked structure allows for efficient signal processing while minimizing noise and improving performance. This design is particularly useful in high-resolution imaging applications where compactness and signal integrity are critical. The use of separate substrates for the pixel array and output circuitry enables better optimization of each component, leading to improved image quality and device reliability.
13. The solid-state imaging device according to claim 12, wherein the light receiving lens is over at least two unit regions of the plurality of unit regions sharing the charge accumulation section.
A solid-state imaging device includes a light receiving lens positioned over at least two adjacent unit regions that share a common charge accumulation section. Each unit region contains a photodiode for converting incident light into electrical charge, which is then transferred to the shared charge accumulation section. The light receiving lens focuses light onto the photodiodes in these unit regions, improving light collection efficiency. By sharing a single charge accumulation section, the device reduces the number of charge accumulation sections needed, allowing for a more compact pixel structure. This design enhances sensitivity and signal-to-noise ratio while maintaining high-resolution imaging. The shared charge accumulation section also simplifies the readout process, as charge from multiple photodiodes can be combined before being read out. This configuration is particularly useful in low-light conditions or applications requiring high dynamic range, such as digital cameras, medical imaging, and surveillance systems. The device balances performance and space efficiency, making it suitable for advanced imaging applications.
14. The solid-state imaging device according to claim 1, further comprising phase-difference detection pixels, wherein the charge accumulation section is for each of the phase-difference detection pixels.
A solid-state imaging device includes phase-difference detection pixels integrated with charge accumulation sections. The device captures images while also enabling phase-difference autofocus by detecting phase shifts between light waves. The charge accumulation sections are specifically designed for each phase-difference detection pixel, allowing precise measurement of light intensity and phase information. These pixels are distributed across the imaging sensor to facilitate accurate focus detection without requiring a separate dedicated autofocus sensor. The integration of phase-difference detection within the imaging array improves focus speed and accuracy while maintaining high-resolution image capture. The charge accumulation sections enhance sensitivity and signal-to-noise ratio, ensuring reliable phase-difference measurements even in low-light conditions. This design eliminates the need for mechanical focusing mechanisms, reducing device complexity and improving robustness. The imaging device is suitable for applications requiring fast and precise autofocus, such as digital cameras, smartphones, and surveillance systems. The phase-difference detection pixels and their associated charge accumulation sections work in tandem to provide real-time focus adjustments, enhancing overall imaging performance.
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May 27, 2020
June 11, 2024
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