According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).
Legal claims defining the scope of protection, as filed with the USPTO.
3. The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film comprises at least one of: a metal oxide, a metal nitride, or a metal oxynitride.
4. The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film comprises aluminum oxide.
5. The method for manufacturing a semiconductor device according to claim 1, wherein the supplying the reducing agent reduces an amount of molybdenum oxide, formed based on the adsorbing material and the Mo material.
6. The method of claim 1, wherein step (b) is performed after step (a), and step (c) is performed after step (b).
8. The method for manufacturing a semiconductor device according to claim 1, wherein supplying the Mo material is performed before supplying any reducing agent over the insulating film.
9. The method for manufacturing a semiconductor device according to claim 1, wherein the Mo material is supplied over the insulating film over which the adsorbing material has been adsorbed.
10. The method for manufacturing a semiconductor device according to claim 1, wherein the adsorbing material is adsorbed over the insulating film before supplying any Mo material over the insulating film.
14. The method for manufacturing a semiconductor device according to claim 13, wherein the molybdenum film is coupled to a semiconductor channel film via the third insulating film and a charge storage film.
15. The method for manufacturing a semiconductor device according to claim 11, wherein at least one of the third insulating films comprise at least one of: a metal oxide, a metal nitride, or a metal oxynitride.
16. The method for manufacturing a semiconductor device according to claim 11, wherein at least one of the third insulating films comprises aluminum oxide.
17. The method for manufacturing a semiconductor device according to claim 11, wherein at least one of the molybdenum films functions as a word line (WL).
18. The method of manufacturing a semiconductor device according to claim 11, wherein the supplying the Mo material is performed after the adsorbing the adsorbing material, and wherein the supplying the reducing agent is performed after the supplying the Mo material.
19. The method for manufacturing a semiconductor device according to claim 11, wherein the at least one adsorbing material is adsorbed over the third insulating film before supplying any Mo material over the third insulating film.
20. The method for manufacturing a semiconductor device according to claim 11, wherein the Mo material is supplied over the third insulating film over which the at least one adsorbing material has been adsorbed.
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August 27, 2021
June 11, 2024
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