According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).
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3. The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film comprises at least one of: a metal oxide, a metal nitride, or a metal oxynitride.
This invention relates to semiconductor device manufacturing, specifically addressing the need for improved insulating films in semiconductor structures. The method involves forming an insulating film on a semiconductor substrate, where the insulating film is composed of at least one material selected from a metal oxide, a metal nitride, or a metal oxynitride. These materials are chosen for their superior electrical insulation properties, thermal stability, and compatibility with semiconductor processing. The insulating film is deposited using techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD), ensuring precise control over film thickness and uniformity. The metal oxide, metal nitride, or metal oxynitride composition enhances dielectric performance, reduces leakage current, and improves reliability in semiconductor devices. This approach is particularly useful in advanced semiconductor nodes where high-k dielectric materials are required to maintain performance and scalability. The method may also include additional steps such as annealing or surface treatment to optimize film properties. The resulting semiconductor device exhibits improved electrical characteristics, including lower leakage current and higher breakdown voltage, making it suitable for applications in transistors, capacitors, and other semiconductor components.
4. The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film comprises aluminum oxide.
The semiconductor manufacturing process involves forming an insulating film on a semiconductor substrate to protect underlying components and improve device performance. A key challenge is selecting an insulating material that provides effective electrical insulation, thermal stability, and compatibility with semiconductor fabrication processes. Aluminum oxide (Al2O3) is a promising candidate due to its high dielectric strength, thermal conductivity, and resistance to chemical corrosion, but integrating it into semiconductor manufacturing requires precise deposition techniques to ensure uniformity and adhesion. The method involves depositing an aluminum oxide insulating film on a semiconductor substrate. The film is formed using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process, which allows for precise control over film thickness and composition. The aluminum oxide film serves as a dielectric layer, providing electrical insulation between conductive layers or components. It may also act as a barrier layer to prevent diffusion of impurities or moisture into the semiconductor structure. The deposition process is optimized to ensure the film adheres well to the substrate and maintains its insulating properties under operating conditions. This approach enhances device reliability and performance in applications such as integrated circuits, memory devices, and power electronics.
5. The method for manufacturing a semiconductor device according to claim 1, wherein the supplying the reducing agent reduces an amount of molybdenum oxide, formed based on the adsorbing material and the Mo material.
This invention relates to semiconductor manufacturing, specifically addressing the issue of molybdenum oxide formation during the production of semiconductor devices. The process involves depositing a molybdenum (Mo) material onto a substrate, where the Mo material interacts with an adsorbing material, leading to the formation of molybdenum oxide. To mitigate this, a reducing agent is supplied to the Mo material, reducing the amount of molybdenum oxide formed. The reducing agent reacts with the molybdenum oxide, converting it back to molybdenum, thereby improving the purity and electrical properties of the deposited Mo material. This method enhances the performance and reliability of semiconductor devices by minimizing oxide impurities. The reducing agent may be introduced during or after the deposition process, depending on the specific requirements of the semiconductor manufacturing steps. The technique is particularly useful in applications where high-purity molybdenum layers are critical, such as in advanced integrated circuits and memory devices. By controlling the oxide formation, the method ensures better adhesion, conductivity, and overall device functionality.
6. The method of claim 1, wherein step (b) is performed after step (a), and step (c) is performed after step (b).
This invention relates to a method for processing data in a sequence-dependent manner, addressing the need for precise control over the order of operations in computational or manufacturing workflows. The method involves three primary steps: (a) performing an initial data processing operation, (b) executing a subsequent data transformation, and (c) finalizing the processed data. The key innovation is the strict enforcement of a sequential order where step (b) must follow step (a), and step (c) must follow step (b). This ensures that intermediate results from step (a) are properly utilized in step (b), and the final output from step (b) is correctly processed in step (c). The method is particularly useful in applications where the integrity of the processing sequence is critical, such as in data validation, quality control, or automated manufacturing, where deviations from the prescribed order could lead to errors or inefficiencies. The invention may also include additional steps or variations, such as conditional branching or iterative loops, but the core requirement remains the strict adherence to the defined sequence of operations. This approach minimizes the risk of data corruption or process failures by eliminating the possibility of out-of-order execution.
8. The method for manufacturing a semiconductor device according to claim 1, wherein supplying the Mo material is performed before supplying any reducing agent over the insulating film.
This invention relates to semiconductor device manufacturing, specifically addressing challenges in forming molybdenum (Mo) layers on insulating films. The process involves depositing a Mo material onto an insulating film before introducing any reducing agent. This sequence ensures proper adhesion and uniformity of the Mo layer, which is critical for applications like electrodes or interconnects in semiconductor devices. The method prevents contamination or unwanted reactions that could occur if a reducing agent were present during Mo deposition. The insulating film may be silicon oxide, silicon nitride, or other dielectric materials commonly used in semiconductor fabrication. The Mo material is deposited using techniques such as physical vapor deposition (PVD) or chemical vapor deposition (CVD), followed by a separate step where a reducing agent is introduced to further refine the Mo layer. This approach improves electrical conductivity and reliability of the Mo layer in the final semiconductor device. The invention is particularly useful in advanced semiconductor manufacturing where precise control over material properties is essential.
9. The method for manufacturing a semiconductor device according to claim 1, wherein the Mo material is supplied over the insulating film over which the adsorbing material has been adsorbed.
This invention relates to semiconductor device manufacturing, specifically addressing challenges in forming high-quality molybdenum (Mo) layers on insulating films. The process involves depositing an adsorbing material onto an insulating film to enhance the adhesion and uniformity of a subsequently deposited Mo layer. The adsorbing material, which may include metals like titanium or zirconium, is first adsorbed onto the insulating film. Then, a Mo material is supplied over the insulating film with the adsorbed material, improving the interface quality and electrical properties of the resulting Mo layer. This method is particularly useful for applications requiring precise control over thin-film deposition, such as in advanced semiconductor devices where interface quality directly impacts device performance. The adsorbing material acts as an intermediary layer, promoting better nucleation and adhesion of the Mo film, which can reduce defects and improve reliability. The technique is applicable to various insulating films, including oxides and nitrides, and can be integrated into existing semiconductor fabrication processes. The key innovation lies in the use of the adsorbing material to enhance the deposition of Mo, addressing issues like poor adhesion and non-uniformity that can arise when depositing Mo directly onto insulating surfaces. This method ensures high-quality Mo layers for applications in transistors, interconnects, and other semiconductor structures.
10. The method for manufacturing a semiconductor device according to claim 1, wherein the adsorbing material is adsorbed over the insulating film before supplying any Mo material over the insulating film.
This invention relates to semiconductor device manufacturing, specifically addressing challenges in forming high-quality molybdenum (Mo) films on insulating layers. The process involves depositing an adsorbing material onto an insulating film before introducing Mo material, ensuring better adhesion and uniformity. The adsorbing material, such as a metal or metal compound, is applied to the insulating film's surface to enhance Mo nucleation and prevent defects. This step occurs before any Mo deposition, ensuring optimal interaction between the adsorbing layer and the insulating film. The method improves film quality, reduces defects, and enhances device performance by promoting uniform Mo growth. The adsorbing material may be selected based on compatibility with the insulating film and Mo, and the deposition techniques can include chemical vapor deposition (CVD) or atomic layer deposition (ALD). This approach is particularly useful in advanced semiconductor manufacturing where precise material layering is critical.
14. The method for manufacturing a semiconductor device according to claim 13, wherein the molybdenum film is coupled to a semiconductor channel film via the third insulating film and a charge storage film.
This invention relates to semiconductor device manufacturing, specifically addressing the integration of molybdenum films in semiconductor structures. The method involves forming a molybdenum film that is electrically coupled to a semiconductor channel film through an insulating layer and a charge storage layer. The molybdenum film serves as a conductive element, while the insulating layer and charge storage layer facilitate charge trapping and retention, which are critical for non-volatile memory devices. The semiconductor channel film acts as the primary conductive path for charge carriers. The insulating layer electrically isolates the molybdenum film from the channel film, while the charge storage layer enables controlled charge storage and release, essential for memory operations. This configuration improves device performance by enhancing charge retention and reducing leakage, addressing challenges in reliability and endurance for advanced semiconductor memory technologies. The method ensures proper alignment and electrical coupling between the molybdenum film and the underlying layers, optimizing device functionality. The invention is particularly useful in non-volatile memory applications where stable charge storage and efficient charge transfer are required.
15. The method for manufacturing a semiconductor device according to claim 11, wherein at least one of the third insulating films comprise at least one of: a metal oxide, a metal nitride, or a metal oxynitride.
The invention relates to semiconductor device manufacturing, specifically addressing the need for improved insulating films in semiconductor structures. The method involves forming a semiconductor device with multiple insulating films, where at least one of these films is a third insulating film composed of a metal oxide, metal nitride, or metal oxynitride. These materials are chosen for their superior electrical and thermal properties, enhancing device performance and reliability. The third insulating film is deposited on a substrate or another insulating layer, contributing to the overall insulation and structural integrity of the semiconductor device. The process may include steps such as deposition, etching, and patterning to form the desired film structure. The use of metal-based insulating films helps reduce leakage current, improve thermal stability, and enhance dielectric strength, which are critical for advanced semiconductor applications. The method is particularly useful in high-performance integrated circuits where precise control of insulating properties is essential. The invention ensures better insulation and reliability in semiconductor devices, addressing challenges in miniaturization and high-density integration.
16. The method for manufacturing a semiconductor device according to claim 11, wherein at least one of the third insulating films comprises aluminum oxide.
The invention relates to semiconductor device manufacturing, specifically addressing the need for improved insulating films in semiconductor structures. The method involves forming a semiconductor device with multiple insulating films, where at least one of these films is an aluminum oxide layer. This aluminum oxide film is deposited to enhance electrical insulation, barrier properties, or other performance characteristics in the device. The process includes forming a first insulating film on a substrate, followed by a second insulating film, and then a third insulating film that includes aluminum oxide. The aluminum oxide film may serve as a diffusion barrier, a high-k dielectric, or a protective layer, depending on its placement and function within the device. The method ensures precise control over film composition and thickness to achieve desired electrical and mechanical properties. The use of aluminum oxide improves reliability, reduces leakage current, or enhances thermal stability in the semiconductor device. This approach is particularly useful in advanced semiconductor manufacturing where high-performance insulating layers are critical for device functionality and longevity.
17. The method for manufacturing a semiconductor device according to claim 11, wherein at least one of the molybdenum films functions as a word line (WL).
The invention relates to semiconductor device manufacturing, specifically addressing the integration of molybdenum films in memory devices. The problem solved involves optimizing the use of molybdenum films to enhance performance and reliability in semiconductor structures, particularly in memory applications. The method involves forming a semiconductor device with multiple molybdenum films, where at least one of these films serves as a word line (WL). The word line is a critical component in memory devices, controlling access to memory cells. The molybdenum film used as the word line provides low resistivity, high thermal stability, and compatibility with high-temperature processing steps, improving device performance and longevity. The process includes depositing molybdenum films on a substrate, patterning them to define the word line, and integrating them with other device layers. Additional molybdenum films may function as barriers or conductive layers, ensuring reliable electrical connections and preventing diffusion of unwanted materials. The method ensures precise alignment and uniformity of the molybdenum films, critical for high-density memory devices. This approach enhances the electrical and thermal properties of the semiconductor device, making it suitable for advanced memory technologies such as DRAM or flash memory. The use of molybdenum films as word lines reduces resistance and improves signal integrity, leading to faster and more reliable memory operations. The method also supports scalability, allowing for smaller feature sizes in next-generation semiconductor devices.
18. The method of manufacturing a semiconductor device according to claim 11, wherein the supplying the Mo material is performed after the adsorbing the adsorbing material, and wherein the supplying the reducing agent is performed after the supplying the Mo material.
This invention relates to semiconductor device manufacturing, specifically a method for depositing molybdenum (Mo) material in a controlled manner to improve device performance. The process addresses challenges in conventional deposition techniques, such as poor uniformity, contamination, or inadequate adhesion of Mo layers, which can degrade semiconductor functionality. The method involves a multi-step sequence to deposit Mo material onto a substrate. First, an adsorbing material is applied to the substrate to create a surface that selectively binds Mo atoms. This step ensures precise placement of the Mo material, enhancing layer uniformity and adhesion. Next, Mo material is supplied to the substrate, where it interacts with the adsorbing material to form a thin, well-defined layer. Finally, a reducing agent is introduced to stabilize the Mo layer, preventing oxidation and improving electrical conductivity. The sequential application of adsorbing material, Mo material, and reducing agent ensures high-quality Mo deposition with minimal defects. This method is particularly useful in advanced semiconductor manufacturing, where precise material placement and layer integrity are critical for device reliability and performance. The controlled deposition process reduces defects and improves the overall quality of the semiconductor device.
19. The method for manufacturing a semiconductor device according to claim 11, wherein the at least one adsorbing material is adsorbed over the third insulating film before supplying any Mo material over the third insulating film.
Semiconductor manufacturing. Problem: Controlling material deposition uniformity. A method involves manufacturing a semiconductor device. This process includes a third insulating film. Prior to depositing any Molybdenum (Mo) material onto this third insulating film, at least one adsorbing material is applied and attached to the surface of the third insulating film.
20. The method for manufacturing a semiconductor device according to claim 11, wherein the Mo material is supplied over the third insulating film over which the at least one adsorbing material has been adsorbed.
This invention relates to semiconductor device manufacturing, specifically addressing challenges in forming molybdenum (Mo) layers with improved adhesion and uniformity. The method involves depositing an Mo material onto a third insulating film, which has been pre-treated with at least one adsorbing material to enhance surface properties. The adsorbing material modifies the insulating film's surface to promote better Mo adhesion and reduce defects during deposition. The process ensures uniform Mo layer formation, critical for reliable semiconductor performance. The adsorbing material may include organic or inorganic compounds that chemically or physically interact with the insulating film, creating a favorable interface for subsequent Mo deposition. This technique is particularly useful in advanced semiconductor fabrication where precise material layering is essential for device functionality and yield. The method improves upon conventional deposition processes by pre-conditioning the substrate surface, leading to higher-quality Mo films with fewer voids or delamination issues. The approach is applicable to various semiconductor devices, including transistors and memory cells, where Mo is used as a conductive or barrier layer. The invention focuses on optimizing the interface between the insulating film and Mo layer to enhance overall device reliability and performance.
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August 27, 2021
June 11, 2024
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