An SGT circuit includes a first conductor layer which contains a semiconductor atom, which is in contact with an N+ region and a P+ region of a Si pillar, or a TiN layer, and whose outer circumference is located outside an outer circumference of a SiO2 layer in plan view, and a second conductor layer which contains a metal atom, which is connected to an outer periphery of the first conductor layer, and which extends in a horizontal direction.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The method for producing a pillar-shaped semiconductor device according to claim 1, further comprising between Step (d) and Step (e), removing a surface layer of the side surface of the semiconductor pillar in the opening.
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March 14, 2022
July 2, 2024
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