A method for fabricating a MOS transistor includes: forming a gate dielectric material layer over a substrate; forming a lower gate electrode material layer over the gate dielectric material layer; performing a first ion bombardment process of bombarding the lower gate electrode material layer with first ions; forming an intermediate gate electrode material layer including an amorphous silicon layer over the lower gate electrode material layer; forming an upper gate electrode material layer over the intermediate gate electrode material layer; performing a second ion bombardment process for bombarding the upper gate electrode material layer with second ions; and forming silicide layers in the lower gate electrode material layer and the upper gate electrode material layer to form a lower gate electrode layer and an upper gate electrode layer.
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3. The method of claim 1, wherein the first ions and the second ions include one or more among helium (He), neon (Ne), argon (Ar), xenon (Xe), krypton (Kr), and radon (Rn).
5. The method of claim 4, wherein the ions include one or more among N-type ions including arsenic (As), antimony (Sb) and phosphorus (P), and P-type ions including boron (B), boron fluoride (BF2), gallium (Ga) and indium (In).
8. The method of claim 1, wherein the first ion bombardment process and the second ion bombardment process include performing an ion implantation process or a plasma process.
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November 23, 2021
July 9, 2024
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