Methods for depositing an amorphous carbon layer on a substrate and for filling a substrate feature with an amorphous carbon gap fill are described. The method comprises performing a deposition cycle comprising: introducing a hydrocarbon source into a processing chamber; introducing a plasma initiating gas into the processing chamber; generating a plasma in the processing chamber at a temperature of greater than 600° C.; forming an amorphous carbon layer on a substrate with a deposition rate of greater than 200 nm/hr; and purging the processing chamber.
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2. The method of claim 1, wherein the plasma initiating gas is selected from one or more of hydrogen, helium, argon, and nitrogen.
3. The method of claim 1, further comprising repeating the deposition cycle from 2 to 50 times.
4. The method of claim 1, wherein the amorphous carbon layer is a gap fill layer.
5. The method of claim 1, wherein the amorphous carbon layer is a conformal layer.
6. The method of claim 1, wherein the hydrocarbon source comprises one or more of acetylene, vinylacetylene, benzene, styrene, toluene, xylene, pyridine, acetophenone, phenol, furan, C3H2, C5H4, monofluorobenzene, difluorobenzene, tetrafluorobenzene, and hexafluorobenzene.
7. The method of claim 1, wherein purging the processing chamber comprises flowing a purge gas into the processing chamber.
8. The method of claim 7, wherein the purge gas comprises an inert gas or a hydrocarbon source gas.
9. The method of claim 1, wherein the hydrocarbon compound to plasma-initiating gas flow ratio is from 1:10 to 10:1.
10. The method of claim 1, wherein the substrate comprises a stack of a plurality of alternating layers of an oxide material and a nitride material.
11. The method of claim 1, wherein the at least one feature comprises a memory hole or a word-line slit.
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September 8, 2020
August 13, 2024
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