An indium phosphide substrate, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 50 μm or more to 130 μm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 μm or more to 400 μm or less; and wherein the indium phosphide substrate has a thickness of 330 μm or more to 700 μm or less.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The indium phosphide substrate according to claim 1, wherein the angle θ is 60°≤θ≤120° for all of the planes A where the distance from the main surface is 100 μm or more to 200 μm or less.
6. The indium phosphide substrate according to claim 1, wherein a ratio of the chamfered width Xb from the wafer edge on the surface side opposite to the main surface to the chamfered width Xf from the wafer edge on the main surface side: Xb/Xf is 1.25 or more to 8.0 or less.
7. The indium phosphide substrate according to claim 6, wherein the ratio Xb/Xf is 1.70 or more to 3.0 or less.
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March 7, 2022
August 20, 2024
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