Patentable/Patents/US-12079482
US-12079482

Memory device

PublishedSeptember 3, 2024
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A memory device includes a memory bank including a plurality of banks that comprise memory cells, and a PIM (processing in memory) circuit including a plurality of PIM blocks, each of the PIM blocks including an arithmetic logic unit (ALU) configured to perform an arithmetic operation using internal data acquired from at least one of the plurality of banks or an address generating unit. The plurality of PIM blocks include a first PIM block allocated to at least one first bank and a second PIM block allocated to at least one second bank. The address generating unit of the first PIM block is configured to generate a first internal row address for the at least one first bank, and the address generating unit of the second PIM block is configured to generate a second internal row address for the at least one second bank.

Patent Claims
7 claims

Legal claims defining the scope of protection, as filed with the USPTO.

2

2. The memory device of claim 1, wherein the address generating unit is configured to receive information on a row address for at least one of the plurality of banks from an external host through a pad that exchanges a data signal with the external host.

3

3. The memory device of claim 1, wherein the address generating unit is configured to receive information on a row address for the bank that provides internal data using the internal data acquired from at least one of the plurality of banks.

7

7. The memory device of claim 1, wherein the address generating unit of the first PIM block comprises an offset register configured to store offset information, configured to receive a reference address and a control command from an external host, and configured to generate the internal row address based on the reference address and the offset information.

9

9. The memory device of claim 8, wherein the address decoder is configured to output the first internal row address based on a value obtained by adding the base value to a value obtained by multiplying the index value by the stride value.

13

13. The memory device of claim 1, wherein at least two banks, among the plurality of banks, share one of the plurality of PIM blocks.

16

16. The memory device of claim 14, wherein each of the PIM blocks is configured to generate an internal column address for at least one bank respectively connected to the PIM blocks.

17

17. The memory device of claim 16, wherein each of the PIM blocks comprises an offset register configured to store an offset address and a reference register configured to store a reference address, and is configured to generate the internal row address and the internal column address based on the offset address and the reference address.

Classification Codes (CPC)

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Patent Metadata

Filing Date

September 23, 2022

Publication Date

September 3, 2024

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Cite as: Patentable. “Memory device” (US-12079482). https://patentable.app/patents/US-12079482

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