Method of generating netlist including proximity-effect-inducer (PEI) parameters

For a method of manufacturing a semiconductor device, a corresponding layout diagram is stored on a non-transitory computer-readable medium, the layout diagram being arranged relative to first and second perpendicular directions, the layout diagram including cells such that, for a subset of the cells, each subject one of the cells (subject cell) in the subset has a neighborhood including first and second neighbor cells on corresponding first and second sides of the subject cell relative to the first direction. The method includes: for each subject cell in the subset, generating a sidefile which represents neighborhood-specific proximity-effect information. For each cell in the subset of the cells, the generating a sidefile includes populating the sidefile with a first neighbor-specific proximity-effect (NSPE) parameter corresponding to an inter-cell proximity-effect induced by the first neighbor cell and a second NSPE parameter corresponding to an inter-cell proximity-effect induced by the second neighbor cell.