An area-selective deposition method may include providing a substrate structure including a silicon oxide area and a silicon nitride area; performing a surface treatment on the silicon oxide area and the silicon nitride area of the substrate structure to form a first functional group on a surface of the silicon oxide area and to form a second functional group on a surface of the silicon nitride area; and performing an atomic layer deposition (ALD) process in a chamber in which the substrate structure is disposed, to selectively form a silicon oxide layer on the silicon oxide area among the silicon nitride area and the silicon oxide area. The ALD process may include: supplying an aminosilane-based silicon precursor into the chamber; purging the chamber with a first purge gas; supplying an oxygen-containing source into the chamber; and purging the chamber with a second purge gas.
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4. The method of claim 2, wherein the surface treatment is performed using a plasma comprising fluorine or a gas comprising the fluorine.
5. The method of claim 1, wherein the first functional group comprises —OH, and the second functional group comprises —NH2.
6. The method of claim 1, wherein the aminosilane-based silicon precursor comprises diisopropylamino silane (DIPAS).
7. The method of claim 1, wherein the aminosilane-based silicon precursor is selectively adsorbed to the first functional group among the first functional group and the second functional group to form SiH3 on the silicon oxide area.
8. The method of claim 1, wherein the oxygen-containing source comprises ozone (O3).
9. The method of claim 1, wherein a processing temperature of the ALD process is 150° C. or less.
15. The method of claim 1, wherein the substrate structure comprises at least one silicon oxide area and at least one silicon nitride area arranged on an upper surface of a substrate in a direction parallel to a main surface of the substrate.
17. The method of claim 16, wherein the electronic device comprises a three-dimensional V-NAND device.
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January 25, 2022
October 15, 2024
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