A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The component, as recited in claim 1, wherein the electrically conductive silicon comprises doped silicon.
3. The component, as recited in claim 1, wherein the electrically conductive silicon containing material has a coefficient of thermal expansion of less than 5.0×10−6/K.
4. The component, as recited in claim 1, wherein the conformal aluminum barrier layer has a thickness between about 20 micrometers (μm) to 150 μm.
5. The component, as recited in claim 1, wherein the conformal aluminum barrier layer is at least 99.9% pure by mass.
6. The component, as recited in claim 1, wherein the component is at least one of an electrode, a showerhead, an edge ring, or a high flow liner for use in the plasma processing chamber.
7. The component, as recited in claim 6, wherein the component forms an edge ring around an electrostatic chuck within the plasma processing chamber, the electrostatic chuck supporting a wafer for processing.
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February 16, 2021
October 29, 2024
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