Described herein is a technique capable of forming a film so as to fill an inside of a recess provided on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a film by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a gas to a substrate in a process chamber; and (a-2) vacuum-exhausting an inner atmosphere of the process chamber; and (b) generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate at a predetermined timing during (a).
Legal claims defining the scope of protection, as filed with the USPTO.
2. The method of claim 1, wherein the temperature on the back surface of the substrate is set at least temporarily higher than the temperature on the front surface of the substrate at a timing of supplying the gas into the process chamber.
3. The method of claim 2, wherein the gas comprises a source gas, and the temperature on the back surface of the substrate is set at least temporarily higher than the temperature on the front surface of the substrate at a timing of supplying the source gas into the process chamber.
4. The method of claim 2, wherein the gas comprises an inert gas, and the temperature on the back surface of the substrate is set at least temporarily higher than the temperature on the front surface of the substrate at a timing of supplying the inert gas into the process chamber.
5. The method of claim 1, wherein the gas comprises a source gas, and the temperature on the back surface of the substrate is set at least temporarily higher than the temperature on the front surface of the substrate at a timing of supplying the source gas into the process chamber.
6. The method of claim 5, wherein the gas comprises an inert gas, and the temperature on the back surface of the substrate is set at least temporarily higher than the temperature on the front surface of the substrate at a timing of supplying the inert gas into the process chamber.
7. The method of claim 1, wherein the gas comprises an inert gas, and the temperature on the back surface of the substrate is set at least temporarily higher than the temperature on the front surface of the substrate at a timing of supplying the inert gas into the process chamber.
8. The method of claim 1, wherein the gas comprises an inert gas, and the temperature on the front surface of the substrate is set at least temporarily higher than the temperature on the back surface of the substrate at a timing of supplying the inert gas into the process chamber.
9. The method of claim 1, wherein the temperature on the front surface of the substrate is set higher than the temperature on the back surface of the substrate at a timing of supplying the gas into the process chamber.
10. The method of claim 1, wherein a supply of the gas and a stop of the supply of the gas are repeatedly performed at a timing of supplying the gas into the process chamber.
11. The method of claim 10, wherein a temperature difference between the front surface of the substrate and the back surface of the substrate is generated in accordance with the supply of the gas and the stop of the supply of the gas.
12. The method of claim 10, wherein the gas comprises an inert gas, a temperature difference between the front surface of the substrate and the back surface of the substrate is generated at least temporarily at the timing of vacuum-exhausting the inner atmosphere of the process chamber after a temperature difference between the front surface of the substrate and the back surface of the substrate is generated at least temporarily at a timing of supplying the inert gas into the process chamber.
13. The method of claim 10, wherein the gas comprises at least one among a source gas, a reactive gas and an inert gas.
14. The method of claim 1, wherein the substrate comprises a substrate with a recess formed on a surface thereof.
17. A method of manufacturing a semiconductor device, comprising processing the substrate according to the method of claim 1.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 18, 2021
November 5, 2024
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