A semiconductor device includes a semiconductor feature, a low-k dielectric feature that is formed on the semiconductor feature, and a Si-containing layer that contains elements of silicon and that covers over the low-k dielectric feature. The Si-containing layer can prevent the low-k dielectric feature from being damaged in etch and/or annealing processes for manufacturing the semiconductor device.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The semiconductor device according to claim 1, wherein the surface portion has a thickness in a range from 5 angstroms to 10 angstroms.
3. The semiconductor device according to claim 1, wherein the body portion of the first low-k dielectric feature is made of BCxNy, where x is greater than or equal to zero, and y is a positive number.
4. The semiconductor device according to claim 3, wherein the surface portion includes at least one of SiN, SiBCN or SiBN.
5. The semiconductor device according to claim 3, wherein the first low-k dielectric feature further includes carbon, and the surface portion further contains carbon.
6. The semiconductor device according to claim 1, wherein the surface portion includes at least one of SiN, SiBN, or SiBCN.
7. The semiconductor device according to claim 3, wherein the surface portion further contains SiO2.
9. The semiconductor device according to claim 1, wherein the surface portion of the first low-k dielectric feature is L-shaped.
10. The semiconductor device according to claim 1, wherein the body portion of the first low-k dielectric feature includes carbon, boron and nitrogen, and the surface portion of the first low-k dielectric feature further contains carbon and one or both of boron and nitrogen.
11. The semiconductor device according to claim 1, further comprising a second low-k dielectric feature disposed between the first low-k dielectric feature and the semiconductor feature, wherein the second low-k dielectric feature is of different chemical composition from the first low-k dielectric features.
13. The semiconductor device according to claim 12, further comprising a silicon-containing feature that interconnects the surface portion of the second low-k dielectric feature and the surface portion of the first low-k dielectric feature.
15. The semiconductor device according to claim 14, wherein the Si-containing layer is thinner than the first low-k dielectric features in a thickness direction.
16. The semiconductor device according to claim 14, wherein the Si-containing layer further contains SiO2.
17. The semiconductor device according to claim 14, further comprising a pair of second low-k dielectric features that are formed on the semiconductor feature, that sandwich the gate feature therebetween, and that are of different chemical composition from the first low-k dielectric features, wherein the Si-containing layer covers over both of the first low-k dielectric features and the second low-k dielectric features.
19. The semiconductor device according to claim 18, wherein the first low-k dielectric features have a higher proportion of nitrogen than the second low-k dielectric features.
20. The semiconductor device according to claim 18, wherein the Si-containing layer further contains SiO2.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
July 8, 2021
November 5, 2024
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