An imaging device according to an embodiment of the present disclosure includes: a first semiconductor substrate (100) provided with pixels including a photoelectric conversion element (PD) and floating diffusion (FD) that temporarily holds a charge output from the photoelectric conversion element (PD); and a semiconductor layer (200Y) provided on the first semiconductor substrate (100) via an insulating film (123), the semiconductor layer (200Y) including a readout circuit unit (539) that reads out the charge held in the floating diffusion (FD) and outputs a pixel signal, in which the semiconductor layer (200Y) is formed of an organic semiconductor material.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The imaging device according to claim 1, wherein the organic semiconductor material is one material selected from a material group consisting of a tetracene material, a naphthalene material, a pentacene material, a rubrene material, a thienoacene material, a polythiophene material, a polyfluorene material, and a polyhexylophene material.
4. The imaging device according to claim 3, wherein the epitaxial growth layer includes a homoepitaxial growth layer obtained by homoepitaxial growth.
6. The imaging device according to claim 3, wherein the epitaxial growth layer includes a heteroepitaxial growth layer obtained by heteroepitaxial growth.
9. The imaging device according to claim 8, wherein the epitaxial growth layer has a crystal defect above the insulating film.
12. The imaging device according to claim 11, further comprising a second semiconductor substrate including a logic circuit that processes the pixel signal, the second semiconductor substrate being located on an opposite side of a surface of the semiconductor layer facing the first semiconductor substrate.
14. The imaging device according to claim 1, further comprising a through-substrate electrode penetrating the semiconductor layer, the through-substrate electrode being configured to electrically connect the floating diffusion and the readout circuit unit to each other.
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June 17, 2020
November 19, 2024
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