According to one embodiment, a nitride semiconductor includes a base body, a nitride member, and an intermediate region provided between the base body and the nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0<x1≤1), and a second nitride region including Alx2Ga1-x2N (0≤x2<1, x2<x1). The first nitride region is between the intermediate region and the second nitride region. The intermediate region includes nitrogen and carbon. A concentration of carbon in the intermediate region is not less than 1.5×1019/cm3 and not more than 6×1020/cm3.
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2. The semiconductor according to claim 1, wherein the intermediate region is in contact with the base body.
3. The semiconductor according to claim 2, wherein the intermediate region is in contact with the first nitride region.
4. The semiconductor according to claim 3, wherein the first nitride region is in contact with the second nitride region.
5. The semiconductor according to claim 1, wherein at least a part of the intermediate region includes aluminum.
6. The semiconductor according to claim 1, wherein at least a part of the intermediate region includes silicon.
7. The semiconductor according to claim 1, wherein the first nitride region includes AlN.
8. The semiconductor according to claim 1, wherein the base body includes silicon.
9. The semiconductor according to claim 1, wherein the concentration of carbon in the intermediate region is not less than 3×1019/cm3 and not more than 4×1020/cm3.
10. The semiconductor according to claim 1, wherein the first nitride region does not include carbon, or a concentration of carbon in the first nitride region is lower than the concentration of the carbon in the intermediate region.
12. The semiconductor according to claim 11, wherein the concentration of carbon in the second nitride region is lower than the concentration of carbon in the intermediate region.
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February 10, 2022
December 17, 2024
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