A method for photoresist-free photolithography to pattern a surface of conductor or semiconductor substrate and deposit a material includes surface cleaning and irradiating a surface through a mask with VUV photons from a lamp. Photons are generated with a VUV lamp having a wavelength of 160 nm-200 nm and with an intensity sufficient to alter the surface. The photons are directed through a mask pattern to alter the surface chemistry or structure in those areas of the substrate defined by the mask. Material is selectively deposited onto the surface, in those portions of the surface that are exposed to the VUV photons, or unexposed to the VUV photons, depending on the substrate surface. A method uses a seed film and then electroplates metal onto the seed film in the mask pattern. A method provides for electroless deposition of metal and another for altering surface chemistry in the mask pattern.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The method of claim 1, wherein the conductor or semiconductor substrate comprises a silicon wafer.
3. The method of claim 1, wherein the conductor or semiconductor substrate is selected from the group consisting of SiC, InP, and other III-V semiconductors.
4. The method of claim 1, wherein the VUV lamp comprises a microplasma flat lamp generating the photons at an intensity above approximately 10 mW/cm2.
5. The method of claim 1, wherein the mask is a contact mask.
6. The method of claim 1, wherein the mask is a projection mask.
7. The method of claim 1, wherein the selectively depositing material comprises electroplating a metal.
8. The method of claim 1, wherein the directing comprises providing an ultra-thin layer of water or hydrogen peroxide in the region between the substrate and mask so as to enhance contrast and bonding.
9. The method of claim 1, wherein selectively depositing comprises depositing a metal film onto a partially conducting dielectric.
10. The method of claim 1, conducted in a chamber allowing for gas flow into the chamber and a mask proximate to the surface of the material.
11. The method of claim 1, wherein the selectively depositing comprises depositing a metal seed layer and then electrodepositing a metal film onto a metal seed layer.
12. The method of claim 1, wherein the mask pattern is provided by masking layer and the method comprises providing a thin liquid layer between the substrate and the masking layer.
14. The tool according to claim 13, wherein the chamber is a non-vacuum chamber open for gas flow and the mask is proximate to the surface of the material.
16. The method of claim 15, wherein the material surface is selected from the group consisting of a metal surface, a semiconductor surface, an indium tin oxide surface, a glass surface, a polymer surface, a crystal surface, and a sapphire surface.
19. The method of claim 18, wherein the material surface is changed from being hydrophilic to hydrophobic, or hydrophobic to hydrophilic, in the pattern in the material surface.
20. The method of claim 18, wherein the surface is a semiconductor, dielectric, or metal surface.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 14, 2020
December 24, 2024
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.