Radio frequency package implementing a window frame with edge plating and processes of implementing the same

1. A radio frequency (RF) package, comprising: a support having a semiconductor die attach region; at least one semiconductor die; a frame comprising an electrically insulative member having a lower side attached to the support and an upper side opposite the support; the frame comprising an opening at least partially registered with said semiconductor die attach region; the frame comprising an upper metallization having a first metallization and a second metallization at the upper side of the electrically insulative member and a lower metallization at the lower side of the electrically insulative member; at least one discrete device arranged on the upper metallization, the at least one discrete device being configured as a radio frequency component, and the at least one discrete device having terminals connected to the first metallization and the second metallization; and the frame comprising an electrically conductive edge connection within the opening of the frame connecting the upper metallization to the lower metallization.

2. The RF package of claim 1 wherein the second metallization forms a terminal of the RF package; wherein the first metallization and the lower metallization are electrically connected by the electrically conductive edge connection at a region of the electrically insulative member within the opening of the frame; and wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization.

3. The RF package of claim 1 wherein the electrically conductive edge connection comprises edge plating; wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization; and wherein the electrically conductive edge connection is arranged on inner edges of the frame within the opening of the frame.

4. The RF package of claim 1 further comprising: a third metallization disposed on the electrically insulative member; and a lid on the frame enclosing the opening, wherein the third metallization forms a terminal of the RF package; wherein the second metallization forms a terminal of the RF package; wherein the upper metallization extends to an edge of the frame; wherein the lower metallization extends an edge of the frame; and wherein the edge of the frame comprises an electrically conductive edge connection.

5. The RF package of claim 4 wherein the second metallization forms a terminal of the RF package; wherein the frame protrudes from between the lid and the support; and wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization.

6. The RF package of claim 1, wherein the at least one semiconductor die is a GaN based high-electron-mobility transistor (HEMT).

7. The RF package of claim 1 wherein the second metallization forms a terminal of the RF package; wherein the at least one discrete device comprises one or more of the following: a resistor, an inductor, and a capacitor; wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization; and wherein the electrically conductive edge connection is arranged within a cavity of the frame.

8. The RF package of claim 1 further comprising at least one secondary device is configured to implement one or more of the following: an impedance matching circuit, a matching circuit, an input matching circuit, an output matching circuit, a harmonic filter, a harmonic termination, a coupler, a balun, a power combiner, a power divider, a radio frequency (RF) circuit, a radial stub circuit, a transmission line circuit, a fundamental frequency matching circuit, a baseband termination circuit, a second order harmonic termination circuit, a matching network, and an integrated passive device (IPD).

9. The RF package of claim 1 further comprising at least one multiple stage die implementing multiple paths.

10. The RF package of claim 1 being configured as a Doherty amplifier.

11. The RF package according to claim 1, wherein: the frame further comprises: a second lower metallization at the lower side of the electrically insulative member and spaced apart from the lower metallization; and a second electrically conductive edge plating connecting the second metallization to the second lower metallization, wherein the second metallization forms a terminal of the RF package; and wherein the second metallization and the second lower metallization are electrically connected by the second electrically conductive edge plating.

12. A process of implementing a radio frequency (RF) package, comprising: configuring a support having a semiconductor die attach region; providing at least one semiconductor die; configuring a frame comprising an electrically insulative member having a lower side attached to the support and an upper side opposite the support; configuring the frame to have an opening at least partially registered with said semiconductor die attach region; configuring the frame with an upper metallization having a first metallization and a second metallization at the upper side of the electrically insulative member and a lower metallization at the lower side of the electrically insulative member; arranging at least one discrete device on the upper metallization, the at least one discrete device being configured as a radio frequency component, and the at least one discrete device having terminals connected to the first metallization and the second metallization; and configuring the frame with an electrically conductive edge connection within the opening of the frame connecting the upper metallization to the lower metallization.

13. The process of implementing a RF package of claim 12 further comprising connecting the first metallization and the lower metallization by the electrically conductive edge connection at a region of the electrically insulative member within the opening of the frame, wherein the second metallization forms a terminal of the RF package; and wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization.

14. The process of implementing a RF package of claim 12 wherein the electrically conductive edge connection comprises edge plating; wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization; and wherein the electrically conductive edge connection is arranged on inner edges of the frame within the opening of the frame.

15. The process of implementing a RF package of claim 12 further comprising: configuring the frame to have a third metallization disposed on the electrically insulative member; and arranging a lid on the frame enclosing the opening, wherein the third metallization forms a terminal of the RF package; wherein the second metallization forms a terminal of the RF package; wherein the upper metallization extends to an edge of the frame; and wherein the lower metallization extends to the edge of the frame; and wherein the edge of the frame comprises an electrically conductive edge connection.

16. The process of implementing a RF package of claim 15 wherein the second metallization forms a terminal of the RF package; wherein the frame protrudes from between the lid and the support; and wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization.

17. The process of implementing a RF package of claim 12, wherein the at least one semiconductor die is a GaN based high-electron-mobility transistor (HEMT).

18. The process of implementing a RF package of claim 12 further comprising configuring the at least one discrete device to include one or more of the following: a resistor, an inductor, and a capacitor, wherein the second metallization forms a terminal of the RF package; wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization; and wherein the electrically conductive edge connection is arranged within a cavity of the frame.

19. The process of implementing a RF package of claim 12 further comprising implementing at least one secondary device as one or more of the following: an impedance matching circuit, a matching circuit, an input matching circuit, an output matching circuit, a harmonic filter, a harmonic termination, a coupler, a balun, a power combiner, a power divider, a radio frequency (RF) circuit, a radial stub circuit, a transmission line circuit, a fundamental frequency matching circuit, a baseband termination circuit, a second order harmonic termination circuit, a matching network, and an integrated passive device (IPD).

20. The process of implementing a RF package of claim 12 further comprising providing a multiple stage die implementing multiple paths.

21. The process of implementing a RF package of claim 12 further comprising configuring the RF package as a Doherty amplifier.

22. The process of implementing a RF package according to claim 12, further comprising: configuring a second lower metallization at the lower side of the electrically insulative member and spaced apart from the lower metallization; and configuring a second electrically conductive edge plating connecting the second metallization to the second lower metallization, wherein the second metallization forms a terminal of the RF package; and wherein the second metallization and the second lower metallization are electrically connected by the second electrically conductive edge plating.