Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heater assembly. The substrate support assembly comprises an upper surface and a lower surface; one or more main resistive heaters disposed in the substrate support; and a plurality of heaters in column with the main resistive heaters and disposed in the substrate support. A quantity of the heaters is an order of magnitude greater than a quantity of the main resistive heaters and the heaters are independently controllable relative to each other as well as the main resistive heater.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An electrostatic chuck (ESC), comprising: a dielectric body formed from ceramic material, the dielectric body comprising: an upper surface and a lower surface, a chucking electrode disposed in the dielectric body, main resistive heaters arranged in a plurality of zones and disposed in the dielectric body, and a plurality of secondary heaters in the dielectric body between the main resistive heaters and one of the upper surface and the lower surface, wherein a quantity of the secondary heaters is greater than a quantity of the main resistive heaters, each secondary heater and each zone of main resistive heaters coupled to a unique power circuit within the dielectric body, each power circuit configured to independently operate the connected secondary heater and each zone of main resistive heaters between an on state and an off state without changing the on state and off state of any of the other secondary heaters as well as the each zone of the main resistive heaters.
2. The ESC of claim 1, wherein the plurality of secondary heaters are concentrically arranged about a center of the dielectric body into groups of secondary heaters along a common radius.
3. The ESC of claim 1 wherein any one power circuit enables it coupled secondary heater to remain in the off state all other secondary heaters are simultaneously switched to the on state.
4. The ESC of claim 1, further comprising: a plurality of switches, each secondary heater coupled to a respective switch providing individual control for each secondary heater; and a plurality of control leads, each control lead coupled to a respective individual switch of the plurality of switches and each control lead configured to control one and only one individual secondary heater of the plurality of secondary heaters.
5. The ESC of claim 4, wherein each individual switch is configured to be individually and directly coupled to a power source.
6. The ESC of claim 4, wherein the switch is disposed on a negative terminal of each secondary heaters selectively interrupting the flow of current across the terminal.
7. The ESC of claim 4, wherein the switch is operable to allow 50% of the power to pass through to a respective one of each secondary heater.
8. The ESC of claim 1, wherein the chucking electrode is disposed between the plurality of secondary heaters and the upper surface.
9. A substrate support assembly, comprising: a substrate support having a dielectric body, the dielectric body comprising: a substrate support surface and a lower surface; main resistive heaters arranged in a plurality of zones and coupled to or disposed in the dielectric body; and a plurality of resistive secondary heaters disposed in the dielectric body, each of the plurality of resistive secondary heaters and each zone of main resistive heaters is independently controllable relative to all other resistive secondary heaters and zones of the main resistive heater, wherein the plurality of resistive secondary heaters and main resistive heaters are configured to be individually switched by a respective state switch to enable each combination of individual state switches to independently power each combination of resistive secondary heaters relative and zones of main resistive heaters to a quantity of all other resistive secondary heaters and the zones of the main heaters, the quantity being greater than or equal to 2.
10. The substrate support assembly of claim 9, wherein each individual state switch has a control lead configured to individually and directly coupled to a controller.
11. The substrate support assembly of claim 9, wherein the substrate support is an electrostatic chuck and the dielectric body of the electrostatic chuck is ceramic.
12. The substrate support assembly of claim 9, wherein the plurality of resistive secondary heaters are concentrically arranged in groups of resistive secondary heaters along a common radius.
13. The substrate support assembly of claim 12, wherein the main resistive heater is formed on the lower surface of the dielectric body.
14. The substrate support assembly of claim 12, wherein the main resistive heater is disposed in a polymer body coupled to the lower surface of the dielectric body.
15. The substrate support assembly of claim 9, further comprising: a cooling plate coupled to the substrate support.
16. A processing chamber comprising: a chamber body; a controller; and a substrate support assembly, having an electrostatic chuck, the electrostatic chuck having a dielectric body formed of a single coherent mass of ceramic material, the dielectric body comprising: an upper surface and a lower surface, a chucking electrode disposed in the dielectric body, main resistive heaters arranged in a plurality of zones and disposed in the dielectric body, and a plurality of secondary heaters in the dielectric body between the main resistive heaters and one of the upper surface and the lower surface, wherein a quantity of the secondary heaters is greater than a quantity of the main resistive heaters, each secondary heater and each zone of main resistive heaters coupled to a unique power circuit within the dielectric body, each power circuit configured to independently operate the connected secondary heater and each zone of the main resistive heaters between an on state and an off state without changing the on state and off state of any of the other secondary heaters as well as the plurality of zones of the main resistive heaters.
17. The processing chamber of claim 16, wherein any one secondary heater is configured to remain in the off state while simultaneously switching all other secondary heaters to the on state.
18. The processing chamber of claim 16, wherein the circuit further comprises: a plurality of individual state switches coupled to a respective secondary heater; and, a control lead configured to individually and directly each individual state switch to the controller, wherein the state switch modifies a power state for a respective secondary heater.
19. The processing chamber of claim 18, wherein each state switch is disposed on a negative power lead of a respective secondary heater and is configured to selectively interrupt the flow of current across the negative power lead for powering the respective secondary heater.
20. The processing chamber of claim 19, wherein the state switch is operable to allow 50% of the power to pass through to the respectively connected secondary heater.
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September 23, 2021
March 4, 2025
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