A laminate structure and a method used in the manufacturing of flexible electronics or microelectronic devices are provided. The laminate structure comprises a rigid substrate, a flexible microelectronics structure comprising and a debonding structure provided between the rigid substrate and the flexible microelectronics structure. The debonding structure comprises at least one debonding layer made of a non-metallic inorganic material. The laminate structure comprises first and second peeling surfaces, where at least one of the peeling surfaces corresponding to a surface of the debonding structure or to a surface within the debonding structure. The first and second peeling surfaces are peelable by a debonding force resulting from a mechanical delamination and/or from a pressurized fluid delamination, allowing separating the flexible microelectronic device from the rigid substrate.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A laminate structure used in the manufacturing of electronics devices, the laminate structure comprising: a rigid substrate; a flexible microelectronics structure comprising: at least one device layer; and at least one flexible device substrate layer; a debonding structure provided between the rigid substrate and the flexible microelectronics structure, the debonding structure comprising:, at least one debonding layer made of a non-metallic inorganic material,, the laminate structure comprising first and second peeling surfaces, at least one of the peeling surfaces corresponding to a surface of the debonding structure or to a surface within the debonding structure, the first and second peeling surfaces being peelable by a debonding force resulting from pressurized fluid delamination and/or from mechanical delamination applied during an initiation phase followed by a delamination phase, whereby: the initiation phase comprises a debonding force of more than 40 gF, and the delamination phase comprises a debonding force of less than 30 gF, thereby allowing separating the flexible microelectronic device from the rigid substrate.
2. The laminate structure of claim 1, wherein the at least one debonding layer of the debonding structure is a single debonding layer comprising one of: an oxide, a nitride, a carbide and an oxynitride.
3. The laminate structure of claim 1, wherein the at least one debonding layer has a thickness of 20 μm or less.
4. The laminate structure of claim 1, wherein the first peeling surface corresponds to the top surface of the debonding structure, and the second peeling surface corresponds to a bottom surface of the flexible microelectronics structure.
5. The laminate structure of claim 1, wherein the first peeling surface corresponds to the bottom surface of the debonding structure, and the second peeling surface corresponds to a top surface of the rigid substrate.
6. The laminate structure of claim 1, wherein said at least one debonding layer comprises at least a first debonding layer and a second debonding layer, the peeling interface being formed within the debonding structure.
7. The laminate structure of claim 6, wherein: one of the first and second debonding layers comprises a metal or a metallic alloy; and the other one of the first and second debonding layers comprises one of: an oxide, a nitride, a carbide and an oxynitride.
8. The laminate structure of claim 7, wherein said one debonding layer comprising metal or a metallic alloy comprises nickel (Ni) and the other debonding layer comprises silicon dioxide (SiO2).
9. The laminate structure of claim 8, wherein the tensile stress between the first and second peeling surfaces is between 375 MPa and 625 MPa.
10. The laminate structure of claim 1, further comprising one or more additional layers extending between the at least one debonding layer and the flexible substrate device layer.
11. The laminate structure of claim 10, wherein the one or more additional layers have moisture barrier properties, with a water vapor transmission rate of 10−1 g/m2/day or lower.
12. A laminate structure used in the manufacturing of electronics devices, the laminate structure comprising: a rigid substrate; a flexible microelectronics structure comprising: at least one device layer; and at least one flexible substrate device layer; a debonding structure provided between the rigid substrate and the flexible microelectronics structure, the debonding structure comprising: at least one debonding layer made of a non-metallic inorganic material, the laminate structure comprising first and second peeling surfaces, at least one of the peeling surfaces corresponding to a surface of the debonding structure or to a surface within the debonding structure, said first and second peeling surfaces being peelable by pressurized fluid delamination applied at a delamination speed above 25 mm/s, allowing separating the flexible microelectronic device from the rigid substrate.
13. The laminate structure of claim 12, wherein the at least one debonding layer of the debonding structure is a single debonding layer comprising one of: an oxide, a nitride, a carbide and an oxynitride.
14. The laminate structure of claim 12, wherein the single debonding layer has a thickness of 20 μm or less.
15. The laminate structure of claim 12, wherein the first peeling surface corresponds to the top surface of the debonding structure, and the second peeling surface corresponds to a bottom surface of the flexible microelectronics structure.
16. The laminate structure of claim 12, wherein the first peeling surface corresponds to the bottom surface of the debonding structure, and the second peeling surface corresponds to a top surface of the rigid substrate.
17. The laminate structure of claim 12, wherein said at least one debonding layer comprises at least a first debonding layer and a second debonding layer, the peeling interface being formed within the debonding structure.
18. The laminate structure of claim 12, wherein the first and second peeling surfaces are peelable by the debonding force applied during an initiation phase at more than 40 gF, followed by a delamination phase with the debonding force applied at less than 30 gF.
19. The lamination structure of claim 12, wherein the delamination speed is above 100 m/s.
20. The lamination structure of claim 12, wherein the tensile stress between the first and second peeling surfaces is between 375 MPa and 625 MPa.
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April 6, 2023
March 18, 2025
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