A method for manufacturing an image display device includes: providing a semiconductor growth substrate comprising a semiconductor layer on a first substrate, the semiconductor layer comprising a light-emitting layer; providing a second substrate comprising a circuit, wherein the circuit comprises a circuit element; forming a light-shielding layer on the second substrate; forming an insulating film on the light-shielding layer; bonding the semiconductor layer to the second substrate on which the insulating film is formed; forming a light-emitting element by etching the semiconductor layer; forming an insulating layer that covers the light-emitting element; and electrically connecting the light-emitting element to the circuit element. The light-shielding layer is located between the light-emitting element and the circuit element. In a plan view, the light-shielding layer covers the circuit element.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing an image display device, the method comprising: providing a semiconductor growth substrate comprising a semiconductor layer on a first substrate, the semiconductor layer comprising a light-emitting layer; providing a second substrate comprising a circuit and a first wiring layer, wherein the circuit comprises a circuit element, and the first wiring layer is electrically connected to the circuit element; forming a light-shielding layer on the second substrate; forming an insulating film on the light-shielding layer; bonding the semiconductor layer to the second substrate on which the insulating film is formed; forming a light-emitting element by etching the semiconductor layer; forming an insulating layer that covers the light-emitting element; and electrically connecting the light-emitting element to the circuit element, wherein: the light-shielding layer is located between the light-emitting element and the first wiring layer, and in a plan view, the light-shielding layer covers the circuit element.
2. The method for manufacturing the image display device according to claim 1, further comprising: before the step of bonding the semiconductor layer to the second substrate, removing the first substrate.
3. The method for manufacturing the image display device according to claim 1, further comprising: after the step of bonding the semiconductor layer to the second substrate, removing the first substrate.
4. The method for manufacturing the image display device according to claim 1, wherein: the semiconductor layer comprises an n-type semiconductor layer, the light-emitting layer, and a p-type semiconductor layer, stacked in this order from a first substrate side.
5. The method for manufacturing the image display device according to claim 1, wherein: the step of electrically connecting the light-emitting element to the circuit element comprises forming a via that extends through the insulating layer, the insulating film, and the light-shielding layer.
6. The method for manufacturing the image display device according to claim 1, further comprising: exposing a surface of the light-emitting element from under the insulating layer.
7. The method for manufacturing the image display device according to claim 6, further comprising: forming a transparent electrode at an exposed surface of the exposed light- emitting element.
8. The method for manufacturing the image display device according to claim 1, wherein: the first substrate comprises silicon or sapphire.
9. The method for manufacturing the image display device according to claim 1, wherein: the semiconductor layer comprises a gallium nitride compound semiconductor, and the second substrate comprises silicon.
10. The method for manufacturing the image display device according to claim 1, further comprising: forming a wavelength conversion member on the light-emitting element.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 9, 2021
March 18, 2025
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.