Methods, systems, and devices for robust functionality for memory management associated with high-temperature storage are described. A memory device may apply a pattern (e.g., an imprint conditioning or deletion pattern) to at least a portion of memory cells of a memory array associated with a memory device before or after a power state procedure. The memory device may determine the pattern from various possible patterns, where the pattern may indicate a data state for each memory cell of the portion of memory cells. The pattern may indicate a same data state for each memory cell, an alternating data state for each memory cell, or an asymmetric switching pattern over a plurality of cycles, or any combination thereof. The memory device may write a respective logic value to at least some of the one or more memory cells of the portion of memory cells according to the pattern.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method, comprising: determining to perform an imprint conditioning procedure on one or more memory cells of a memory array of a memory device based at least in part on an indication of a power down of the memory device; writing a respective logic value to at least one of the one or more memory cells in accordance with an imprint conditioning pattern based at least in part on determining to perform the imprint conditioning procedure; and performing the power down of the memory device based at least in part on the indication of the power down and writing the respective logic value to the at least one of the one or more memory cells.
2. The method of claim 1, further comprising: receiving a command from a host device, wherein determining to perform the imprint conditioning procedure is based at least in part on the command from the host device indicating to perform imprint conditioning.
3. The method of claim 1, further comprising: selecting the imprint conditioning pattern based at least in part on determining to perform the imprint conditioning procedure, the imprint conditioning pattern indicating a data state for each memory cell of the one or more memory cells.
4. The method of claim 1, wherein the imprint conditioning pattern indicates a same data state for each memory cell of the one or more memory cells.
5. The method of claim 1, wherein the imprint conditioning pattern indicates an alternating data state for each memory cell of the one or more memory cells.
6. The method of claim 1, wherein the imprint conditioning pattern comprises an asymmetric switching pattern over a plurality of cycles, the asymmetric switching pattern indicating a first data state for a first duration for at least some of the one or more memory cells and a second data state for a second duration for at least some of the one or more memory cells.
7. The method of claim 1, further comprising: determining an indication of a severity of imprint of the one or more memory cells of the memory array, wherein selecting the imprint conditioning pattern is based at least in part on the indication of the severity of imprint.
8. The method of claim 7, further comprising: determining a duration of storing logic states at the memory array, wherein determining the indication of the severity of imprint is based at least in part on the duration of storing logic states.
9. The method of claim 7, further comprising: determining a temperature associated with the memory array, wherein determining the indication of the severity of imprint is based at least in part on the temperature.
10. The method of claim 9, wherein determining the temperature associated with the memory array further comprises: detecting the temperature associated with the memory array is outside a temperature threshold for at least a duration threshold.
11. The method of claim 1, wherein: the one or more memory cells comprise one or more pairs of memory cells configured to store a single bit of information, each pair of memory cells comprising a first memory cell and a second memory cell; and the imprint conditioning pattern indicating a data state for each pair of memory cells, or a first data state for the first memory cell and a second data state for the second memory cell of each pair of memory cells.
12. The method of claim 11, further comprising: writing the respective logic value to at least the first memory cell of each pair of memory cells based at least in part on the imprint conditioning pattern.
13. A method, comprising: performing a power up procedure of a memory device; determining to perform a memory deletion procedure on one or more memory cells of a memory array of the memory device based at least in part on the power up procedure of the memory device; and writing a respective logic value to at least one of the one or more memory cells in accordance with an imprint conditioning pattern based at least in part on determining to perform the memory deletion procedure.
14. The method of claim 13, further comprising: refraining from granting access to a user based at least in part on determining to perform the memory deletion procedure; and granting access to the user based at least in part on completing the memory deletion procedure.
15. The method of claim 13, wherein the imprint conditioning pattern indicates a same data state for each memory cell of the one or more memory cells or an alternating data state for each memory cell of the one or more memory cells.
16. The method of claim 13, wherein the imprint conditioning pattern comprises an asymmetric switching pattern over a plurality of cycles, the asymmetric switching pattern indicating a first data state for a first duration for at least some of the one or more memory cells and a second data state for a second duration for at least some of the one or more memory cells.
17. The method of claim 13, wherein: the one or more memory cells comprise one or more pairs of memory cells configured to store a single bit of information, each pair of memory cells comprising a first memory cell and a second memory cell; and the imprint conditioning pattern indicates a data state for each pair of memory cells or a first data state for the first memory cell and a second data state for the second memory cell of each pair of memory cells.
18. The method of claim 17, further comprising: writing the respective logic value to at least the first memory cell of each pair of memory cells based at least in part on the imprint conditioning pattern.
19. An apparatus, comprising: a memory array; and a controller coupled with the memory array and operable to cause the apparatus to: determine to perform an imprint conditioning procedure on one or more memory cells of the memory array of a memory device based at least in part on an indication of a power state procedure of the memory device; and write a respective logic value to at least one of the one or more memory cells in accordance with an imprint conditioning pattern based at least in part on determining to perform the imprint conditioning procedure.
20. The apparatus of claim 19, wherein the controller is further operable to cause the apparatus to: perform a power up procedure of the memory device; determine to perform a memory deletion procedure on first one or more memory cells of the memory array based at least in part on an indication of the power up procedure; select a deletion pattern based at least in part on determining to perform the memory deletion procedure, the deletion pattern indicating a first data state for at least some of the first one or more memory cells; and write a first respective logic value to at least one of the first one or more memory cells based at least in part on the deletion pattern.
21. The apparatus of claim 20, wherein the controller is further operable to cause the apparatus to: determine to perform a second imprint conditioning procedure on second one or more memory cells of the memory array based at least in part on an indication of a power down procedure; select a second imprint conditioning pattern based at least in part on determining to perform the second imprint conditioning procedure, the second imprint conditioning pattern indicating a second data state for at least some of the second one or more memory cells; write a second respective logic value to at least one of the second one or more memory cells based at least in part on the second imprint conditioning pattern; and perform the power down procedure of the memory device.
22. The apparatus of claim 19, wherein the controller is further operable to cause the apparatus to: determine to perform the imprint conditioning procedure on the one or more memory cells of the memory array based at least in part on an indication of a power down procedure; and perform the power down procedure of the memory device.
23. The apparatus of claim 19, wherein the power state procedure comprises a power up state procedure, a power down state procedure, or both.
24. The apparatus of claim 19, wherein: the memory array comprises one or more pairs of memory cells configured to store a single bit of information, each pair of memory cells comprising a first memory cell and a second memory cell; and the controller is further operable to select the imprint conditioning pattern based at least in part on the one or more pairs of memory cells, the imprint conditioning pattern indicating a data state for each pair of memory cells or a first data state for the first memory cell and a second data state for the second memory cell of each pair of memory cells.
25. The apparatus of claim 19, wherein the controller is further operable to cause the apparatus to: write a first logic value to the at least one of the one or more memory cells based at least in part on a power down procedure; and write a second logic value, different than the first logic value, to the at least one of the one or more memory cells based at least in part on a power up procedure.
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June 2, 2022
April 1, 2025
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