Memory device

1. A semiconductor memory device comprising: a first layer including a first memory cell array and a first contact plug, the first memory cell array including a plurality of first electrode layers stacked in a first direction and a first semiconductor pillar extending through the plurality of first electrode layers in the first direction, the first contact plug extending in the first direction and electrically connected to the first semiconductor pillar; a second layer including a second memory cell array and a second contact plug, the second memory cell array being disposed in the first direction with respect to the first memory cell array and including a plurality of second electrode layers stacked in the first direction and a second semiconductor pillar extending in the first direction through the plurality of second electrode layers the second contact plug extending in the first direction and electrically connected to the second semiconductor pillar and the first contact plug; and a connection pad provided between the first layer and the second layer, and electrically connecting the first contact plug and the second contact plug.

2. The device according to claim 1, further comprising: a circuit driving the first memory cell array and the second memory cell array, wherein the first memory cell array is provided between the second memory cell array and the circuit.

3. The device according to claim 2, further comprising: a connecting conductor provided in a periphery around the first memory cell array and the second memory cell array, and electrically connected to the circuit.

4. The device according to claim 3, wherein the connecting conductor includes a first conductive part provided in the periphery around the first memory cell array, a second conductive part provided in a periphery around the second memory cell array, and a joint part provided between the first conductive part and the second conductive part, and the joint part includes a first end portion approximate to the first conductive part, a second end portion approximate to the second conductive part, and an intermediate portion between the first end portion and the second end portion, a width of the first end portion and a width of the second end portion being narrower than a width of the intermediate portion in a second direction perpendicular to the first direction.

5. The device according to claim 1, wherein the connection pad is positioned between the first semiconductor pillar and the second semiconductor pillar.

6. The device according to claim 1, wherein the connection pad is positioned between the first contact plug and the second contact plug.

7. The device according to claim 1, wherein a bonding interface is provided between the first layer and the second layer; the first layer further includes a metal pattern disposed in a periphery around the first memory cell array; and an area ratio of the metal pattern to the periphery of the first layer is larger than an area ratio of the connection pad to the bonding interface.

8. The device according to claim 1, wherein the first contact plug extends though the plurality of first electrode layers in the first direction.

9. A semiconductor memory device comprising: a plurality of memory cell arrays stacked in a first direction, the plurality of memory cell arrays each including: a plurality of first electrode layers stacked in the first direction, and extending in a second direction crossing the first direction, a plurality of second electrode layers stacked in the first direction, and extending in the second direction, the plurality of first electrode layers and the plurality of second electrode layers being arranged in a third direction crossing the first direction and the second direction, a first semiconductor pillar provided in the plurality of first electrode layers, and extending in the first direction, a second semiconductor pillar provided in the plurality of second electrode layers, and extending in the first direction, and a first connecting conductor extending in the first direction between the plurality of first electrode layers and the plurality of second electrode layers, at least one of the first semiconductor pillar and the second semiconductor pillar being electrically connected to the first connecting conductor in at least one of the memory cell arrays, and the first connecting conductors of the memory cell arrays being aligned along the first direction and electrically connected in series.

10. The device according to claim 9, wherein the memory cell arrays each include an interconnecting layer electrically connected to at least one of the first semiconductor pillar and the second semiconductor pillar, and a second connecting conductor extending in the first direction between the plurality of first electrode layers and the plurality of second electrode layers, the second connecting conductor being connected to the interconnecting layer; the first connecting conductor extending through the interconnecting layer, and being electrically insulated from the interconnecting layer; and the second connecting conductors of the memory cell arrays being aligned along the first direction and electrically connected in series.

11. The device according to claim 9, further comprising: a circuit driving the memory cell arrays, wherein one of the memory cell arrays is disposed between other one of the memory cell arrays and the circuit.

12. The device according to claim 11, further comprising: an interconnection electrically connected to the first connecting conductor; and a third connecting conductor provided in a periphery around the memory cell arrays, and electrically connecting the interconnection and the circuit, wherein the memory cell arrays are positioned between the circuit and the interconnection.

13. The device according to claim 9, wherein the respective memory cell arrays further include connection pads electrically connected to the first connecting conductors respectively, and the first connecting conductors of the memory cell arrays are connected in series via the connection pads.

14. A semiconductor memory device comprising: a first memory cell array including a plurality of first electrode layers stacked in a first direction and including a first end portion, and a first semiconductor pillar extending through the plurality of first electrode layers in the first direction; a second memory cell array disposed in the first direction with respect to the first memory cell array, the second memory cell array including a plurality of second electrode layers stacked in the first direction and including a second end portion, and a second semiconductor pillar extending in the first direction through the plurality of second electrode layers; a first contact plug extending in the first direction and being in contact with one of the first electrode layers at the first end portion; and a second contact plug extending in the first direction, being in contact with one of the second electrode layers at the second end portion, and electrically connected to the first contact plug.

15. The device according to claim 14, further comprising: a third contact plug extending in the first direction through the first memory cell array; and a fourth contact plug extending in the first direction through the second memory cell array and electrically connected to the third contact plug.

16. The device according to claim 14, further comprising: a first connection pad provided between the first memory cell array and the second memory cell array, the first contact plug being connected to the first connection pad; and a second connection pad bonded to the first connection pad between the first memory cell array and the second memory cell array, the second contact plug being connected to the second connection pad.

17. The device according to claim 14, further comprising: a circuit driving the first memory cell array and the second memory cell array, wherein the first memory cell array is provided between the second memory cell array and the circuit.

18. The device according to claim 14, wherein the first memory cell array includes a first source line, the second memory cell array includes a second source line, the plurality of first electrode layers are stacked above the first source line, the plurality of second electrode layers are stacked above the second source line, the first semiconductor pillar is electrically connected to the first source line, and the second semiconductor pillar is electrically connected to the second source line.

19. The device according to claim 14, wherein the first end portion is formed into steps, and the second end portion is formed into steps.

20. A semiconductor memory device comprising: a first memory cell array including a first electrode film extending along a first direction, a second electrode film extending along the first direction and stacked on the first electrode film on a side in a second direction perpendicular to the first direction, and a third electrode film extending along the first direction and stacked on the second electrode film on a side in the second direction; and a peripheral circuit provided to face the first memory cell array on a side in a direction opposite to the second direction, and driving the first memory cell array, a first length of the first electrode film along the first direction being shorter than a second length of the second electrode film along the first direction, and the second length being shorter than a third length of the third electrode film along the first direction.

21. The device according to claim 20, further comprising: a second memory cell array provided on a side of the first memory cell array in the second direction, the second memory cell array including a fourth electrode film extending along the first direction, a fifth electrode film extending along the first direction and stacked on the fourth electrode film on a side in the second direction, and a sixth electrode film extending along the first direction and stacked on the fifth electrode film on a side in the second direction, a fourth length of the fourth electrode film along the first direction being shorter than a fifth length of the fifth electrode film along the first direction, and the fifth length being shorter than a sixth length of the sixth electrode film along the first direction.

22. The device according to claim 21, further comprising: a first contact electrically connected to at least one of the first electrode film, the second electrode film, and the third electrode film; and a third contact electrically connected to at least one of the fourth electrode film, the fifth electrode film, and the sixth electrode film, wherein the first contact and the third contact are electrically connected to each other.

23. The device according to claim 22, further comprising: a third bonding electrode electrically connected to the first contact; and a fourth bonding electrode electrically connected to the third contact, wherein the third bonding electrode and the fourth bonding electrode are bonded at a second bonding interface, a diameter of the third bonding electrode in a vicinity of the second bonding interface is larger than the diameter of the first contact, and a diameter of the fourth bonding electrode is larger than a diameter of the third contact.

24. The device according to claim 20, further comprising: a first contact electrically connected to at least one of the first electrode film, the second electrode film, and the third electrode film; and a second contact electrically connected to the peripheral circuit, wherein the first contact and the second contact are electrically connected to each other.

25. The device according to claim 24, further comprising: a first bonding electrode electrically connected to the first contact; and a second bonding electrode electrically connected to the second contact, wherein the first bonding electrode and the second bonding electrode are bonded at a first bonding interface, a diameter of the first bonding electrode in a vicinity of the first bonding interface is larger than a diameter of the first contact, and a diameter of the second bonding electrode is larger than a diameter of the second contact.

26. The device according to claim 20, further comprising: a first semiconductor pillar extending through the first electrode film, the second electrode film, and the third electrode film; and a fourth contact electrically connected to the first semiconductor pillar.

27. The device according to claim 26, wherein an end portion of the first semiconductor pillar on a side in the second direction is connected to a first source line.

28. The device according to claim 26, further comprising: a second semiconductor pillar extending through a fourth electrode film, a fifth electrode film, and a sixth electrode film; and a fifth contact electrically connected to the second semiconductor pillar.

29. The device according to claim 28, wherein the fourth contact and the fifth contact are electrically connected to each other.