A substrate processing system includes a processing chamber including a substrate support to support a substrate. A coil includes at least one terminal. An RF source configured to supply RF power to the coil. A dielectric window is arranged on one surface of the processing chamber adjacent to the coil. A contamination reducer includes a first plate that is arranged between the at least one terminal of the coil and the dielectric window.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A substrate processing system, comprising: a processing chamber including a substrate support to support a substrate; an inner coil including a first conductor including first terminals and a second conductor including second terminals; an outer coil including a third conductor including third terminals and a fourth conductor including fourth terminals; an RF source configured to supply RF power to the inner and outer coils; a dielectric window arranged on one surface of the processing chamber adjacent to the inner and outer coils; and a plurality of contamination reducers for reducing contamination of the substrate, including: a first plate arranged between the dielectric window and a first one of the third terminals of the third conductor, and a first one of the fourth terminals of the fourth conductor, a second plate arranged between the dielectric window and a first one of the first terminals of the first conductor; a third plate arranged between the dielectric window and a second one of the third terminals of the third conductor, and a second one of the fourth terminals of the fourth conductor, and a fourth plate arranged between the dielectric window and the second terminals of the second conductor; wherein each of the first plate, the second plate, the third plate and the fourth plate have a rectangular shape.
2. The substrate processing system of claim 1, further comprising a gas delivery system configured to supply gas mixtures to the processing chamber.
3. The substrate processing system of claim 1, further comprising a gas injector configured to deliver the gas mixtures to the processing chamber, wherein the gas injector is arranged in a center portion of the dielectric window.
4. The substrate processing system of claim 1, wherein the first plate, the second plate, the third plate, and the fourth plate are each made of a material selected from a group consisting of copper or aluminum.
5. The substrate processing system of claim 1, wherein the first plate, the second plate, the third plate, and the fourth plate are each made of silver-plated copper.
6. The substrate processing system of claim 1, wherein the inner coil and the outer coil are arranged in a range from 0.1″ to 1.0″ from the dielectric window.
7. The substrate processing system of claim 1, wherein the inner coil and the outer coil are arranged in a range from 0.1″ to 0.5″ from the dielectric window.
8. The substrate processing system of claim 1, wherein the inner coil and the outer coil are arranged at the same height above the dielectric window.
9. The substrate processing system of claim 1, wherein the inner coil and the outer coil are arranged at different heights above the dielectric window.
10. The substrate processing system of claim 1, wherein a thickness of the first plate and the second plate is greater than or equal to 0.5 mm and less than or equal to 2 mm.
11. The substrate processing system of claim 1, wherein: the dielectric window includes a coating material on a plasma-facing surface thereof, and the contamination reducer reduces contamination of the substrate by species of the coating material.
12. The substrate processing system of claim 11, wherein the coating material includes metal species and wherein the contamination reducer reduces metal contamination of the substrate.
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June 30, 2021
June 3, 2025
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