A semiconductor switching module includes an insulated gate bipolar transistor and a unipolar switching device. The insulated gate bipolar transistor includes a first transistor cell and a supplemental cell, wherein the first transistor cell includes a first gate and a first source and wherein the supplemental cell includes a second gate and a supplemental electrode. The unipolar switching device is based on a wide bandgap material and includes a third gate and a third source. The third gate and the second gate are electrically connected with each other and are disconnected from the first gate. The first source, the supplemental cell and the third source are electrically connected with each other.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor switching module, comprising: an insulated gate bipolar transistor comprising: a first transistor cell comprising a first gate and a first source; and a second transistor cell comprising a second gate and a second source comprising a supplemental electrode; and a unipolar switching device based on a wide bandgap material and comprising a third gate and a third source, wherein the third gate is electrically connected with the second gate; wherein the third gate and the second gate are disconnected from the first gate; wherein the first source, the supplemental electrode and the third source are electrically connected with each other; wherein the insulated gate bipolar transistor comprises a reverse diode structure electrically connected in parallel to the first transistor cell and the second transistor cell; wherein an operation mode of the reverse diode structure is switchable between an enhanced diode mode and a standard diode mode by a second gate signal applied to the second gate; and wherein a forward conductivity of the reverse diode structure in the enhanced diode mode is higher than a second forward conductivity of the reverse diode structure in the standard diode mode.
2. The semiconductor switching module according to claim 1, comprising: a conduction loss reduction unit configured to: turn on the unipolar switching device and the second transistor cell after turning on the first transistor cell.
3. The semiconductor switching module according to claim 2, wherein: the conduction loss reduction unit is configured to: turn off the unipolar switching device and the second transistor cell prior to turning off the first transistor cell.
4. The semiconductor switching module according to claim 1, comprising: a short-circuit protection unit configured to omit turning on the unipolar switching device and the second transistor cell if a short-circuit condition is detected.
5. The semiconductor switching module according to claim 1, comprising: an overcurrent protection unit configured to turn off the unipolar switching device and the second transistor cell when an overcurrent condition is detected.
6. The semiconductor switching module according to claim 1, wherein: the reverse diode structure comprises a trench electrode structure comprising a trench electrode electrically connected with the second gate.
7. The semiconductor switching module according to claim 6, wherein: a doped diode zone is in contact with a sidewall of the trench electrode structure.
8. The semiconductor switching module according to claim 1, comprising: a plurality of evenly distributed reverse diode structures.
9. The semiconductor switching module according to claim 1, wherein: the insulated gate bipolar transistor comprises a diode region and a transistor region; the reverse diode structure is formed in the diode region; and the first transistor cell and the second transistor cell are formed in the transistor region.
10. The semiconductor switching module according to claim 1, comprising: a reverse current control unit configured to switch the reverse diode structure into the enhanced diode mode in response to a level change of a diode control signal.
11. The semiconductor switching module according to claim 10, comprising: a diode mode control unit configured to activate the diode control signal in response to a second mode control signal.
12. The semiconductor switching module according to claim 10, comprising: a surge current control unit configured to activate the diode control signal in response to detection of a surge current event.
13. The semiconductor switching module according to claim 1, comprising: a light load mode unit configured to turn on the unipolar switching device and the second transistor cell when at least one of the first transistor cell is off or a light load condition is met.
14. The semiconductor switching module according to claim 13, wherein: the light load mode unit is configured to turn on the first transistor cell after the turning on of the unipolar switching device and the second transistor cell.
15. The semiconductor switching module according claim 14, wherein: the light load mode unit is configured to turn off the unipolar switching device and the second transistor cell after turning off the first transistor cell when the light load condition is met.
16. A semiconductor switching module, comprising: an insulated gate bipolar transistor comprising: a first transistor cell comprising a first gate and a first source; and a second transistor cell comprising a second gate and a second source comprising a supplemental electrode; a unipolar switching device based on a wide bandgap material and comprising a third gate and a third source; and a light load mode unit configured to turn on the unipolar switching device and the second transistor cell when at least one of the first transistor cell is off or a light load condition is met, wherein the third gate is electrically connected with the second gate; wherein the third gate and the second gate are disconnected from the first gate; and wherein the first source, the supplemental electrode and the third source are electrically connected with each other.
17. The semiconductor switching module according to claim 16, comprising: a conduction loss reduction unit configured to: turn on the unipolar switching device and the second transistor cell after turning on the first transistor cell.
18. The semiconductor switching module according to claim 17, wherein: the conduction loss reduction unit is configured to: turn off the unipolar switching device and the second transistor cell prior to turning off the first transistor cell.
19. A semiconductor switching module, comprising: an insulated gate bipolar transistor comprising: a first transistor cell comprising a first gate and a first source; and a second transistor cell comprising a second gate and a second source comprising a supplemental electrode; a plurality reverse diode structures; and a unipolar switching device based on a wide bandgap material and comprising a third gate and a third source, wherein the third gate is electrically connected with the second gate; wherein the third pate and the second pate are disconnected from the first pate; wherein the first source, the supplemental electrode and the third source are electrically connected with each other; and at least one of: wherein the semiconductor switching module comprises a light load mode unit configured to turn on the unipolar switching device and the second transistor cell when at least one of the first transistor cell is off or a light load condition is met; or wherein: the insulated gate bipolar transistor comprises a reverse diode structure electrically connected in parallel to the first transistor cell and the second transistor cell; an operation mode of the reverse diode structure is switchable between an enhanced diode mode and a standard diode mode by a second gate signal applied to the second gate; and a forward conductivity of the reverse diode structure in the enhanced diode mode is higher than a second forward conductivity of the reverse diode structure in the standard diode mode.
20. The semiconductor switching module according to claim 19, comprising: a conduction loss reduction unit configured to: turn on the unipolar switching device and the second transistor cell after turning on the first transistor cell; and turn off the unipolar switching device and the second transistor cell prior to turning off the first transistor cell.
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February 28, 2023
June 3, 2025
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