The method serves for depositing a layer of silicon carbide with n-type doping onto a surface of a substrate placed horizontally on a rotating susceptor inside a reaction chamber by means of a CVD type process; the rotating susceptor is adapted to single-substrate support; the method includes introducing and flowing a gaseous mixture internally along the reaction chamber from a first side to a second side passing over a portion of a lower wall of said reaction chamber and then over said rotating susceptor supporting one substrate; the gaseous mixture comprises or consists of: one or more gases being precursor of silicon carbide to be deposited and a carrier gas and a precursor gas containing a substance adapted to give rise to n-type doping; the dopant substance is adapted to be subjected to pyrolysis catalysed by contact with an internal surface made of silicon carbide of said reaction chamber forming species with stoichiometry NHxCySiz where x and y and z are comprised between 0 and 3 and x+y+z>0, the reaction chamber is at a temperature comprised in the range between 1450° C. and 1800° C. and at a pressure comprised in the range between 5 kPa and 30 kPa; the substrate is placed inside the reaction chamber in a region where trends in availability respectively of Si, C and N are all decreasing and where temperature is within a deposition temperature range.
Legal claims defining the scope of protection, as filed with the USPTO.
1. Method for depositing a layer of silicon carbide with n-type doping onto a surface of a substrate placed horizontally on a rotating susceptor inside a reaction chamber by means of a CVD type process, the rotating susceptor being adapted for single-substrate support; wherein the method includes introducing and flowing a gaseous mixture internally along the reaction chamber from a first side to a second side passing over a portion of a lower wall of said reaction chamber and then over said rotating susceptor supporting one substrate, wherein the gaseous mixture comprises: one or more gases being precursor of silicon carbide to be deposited, a carrier gas, and a precursor gas containing a substance adapted to give rise to n-type doping; wherein said substance is adapted to be subjected to pyrolysis catalysed by contact with an internal surface of said reaction chamber forming species with stoichiometry NHxCySiz where x and y and z are comprised between 0 and 3 and x+y+z>0, said internal surface of the reaction chamber comprising walls adapted to be heated by induction which are made of silicon carbide or silicon carbide-coated graphite; wherein said reaction chamber is at a temperature comprised in the range between 1450° C. and 1800° C. and at a pressure comprised in the range between 5 kPa and 30 kPa; wherein said substrate is placed inside the reaction chamber in a region having a first longitudinal position and a second longitudinal position, wherein the availability respectively of Si, C and N decreases as the gaseous mixture travels from the first longitudinal position to the second longitudinal position.
2. Method according to claim 1, wherein said substance is adapted to be subjected to pyrolysis catalysed by contact with an internal surface of said reaction chamber, forming mainly HSiN and HCN, wherein HSiN is predominant.
3. Method according to claim 1, which includes introducing and flowing a silicon precursor gas of the silicon carbide to be deposited along the reaction chamber at high temperature, said silicon precursor gas being a chlorinated compound, in particular dichlorosilane or trichlorosilane or tetrachlorosilane.
4. Method according to claim 1, which includes introducing and flowing a carbon precursor gas of the silicon carbide to be deposited along the reaction chamber at high temperature, said carbon precursor gas being a hydrocarbon, in particular propane or ethylene or acetylene or methane.
5. Method according to claim 1, wherein said substance is ammonia.
6. Method according to claim 1, wherein said gaseous mixture when introduced into said reaction chamber has a C/Si ratio lower than 1.5 and higher than 1.0, so as to form an active layer, and lower than 1.0 and greater than 0.5, so as to form a buffer layer.
7. Method according to claim 1, wherein the substances contained in said precursor gases are adapted to be subjected to pyrolysis catalyzed by contact with an internal surface of said reaction chamber, and wherein said pyrolysis proceeds along said reaction chamber forming Si and C and N species at least with constant N/Si ratio.
8. Method according to claim 1, wherein said substrate is kept in rotation inside said reaction chamber during deposition.
9. Method according to claim 1, which includes introducing and flowing at least one first gaseous mixture and a second gaseous mixture internally along the reaction chamber at high temperature; wherein said first gaseous mixture and said second gaseous mixture comprise: one or more gases being precursor of silicon carbide to be deposited and a carrier gas and a precursor gas containing a substance adapted to give rise ton-type doping.
10. Method according to claim 9, wherein said first gaseous mixture and said second gaseous mixture are different from each other at least in composition.
11. Method according to claim 9, wherein the introduction flow rate and/or the introduction speed of said first gaseous mixture and the introduction flow rate and/or the introduction speed of said second gaseous mixture are different from each other.
12. Method according to claim 9, wherein said first gaseous mixture is introduced into a central zone of said reaction chamber, and wherein said second gaseous mixture is introduced into at least one lateral zone of said reaction chamber.
13. Method according to claim 1, wherein said reaction chamber is kept isolated from the external environment before, during and after deposition by using a load-lock chamber and an automatic loading and unloading system of the substrates, thus avoiding the need to purge the chamber at each deposition.
14. Epitaxial reactor comprising the rotating susceptor inside the reaction chamber for deposition of silicon carbide on substrates by means of CVD type processes at high temperature, wherein the reaction chamber further includes the walls adapted to be heated by induction which are made of silicon carbide or silicon carbide-coated graphite for performing the method according to claim 1.
15. Epitaxial reactor according to claim 14, wherein said rotating susceptor is located inside the reaction chamber in the region having the first longitudinal position and the second longitudinal position, wherein the availability respectively of Si, C and N decreases as the gaseous mixture travels from the first longitudinal position to the second longitudinal position.
16. Epitaxial reactor according to claim 15, wherein said rotating susceptor is adapted for single-substrate support.
17. Epitaxial reactor according to claim 15, comprising an assembly for introducing gasses into said reaction chamber, wherein said assembly is placed before said reaction chamber, wherein said assembly is configured so that gasses are introduced into the reaction chamber only at a first side of said reaction chamber.
18. Epitaxial reactor according to claim 17, wherein said assembly is configured so that: a first gaseous mixture is introduced into a central zone of said reaction chamber, and a second gaseous mixture is introduced into at least one lateral zone of said reaction chamber;, wherein said first gaseous mixture and said second gaseous mixture have a different gas composition.
19. Epitaxial reactor according to claim 18, wherein said first gaseous mixture and said second gaseous mixture comprise or consist of: one or more gases being precursor of silicon carbide, a carrier gas, and possibly a precursor gas containing a substance adapted to give rise to n-type doping.
20. Method according to claim 1, wherein said substance is acetonitrile or pyrrole or hydrazine or hydrogen cyanide or methylamine.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 9, 2021
June 10, 2025
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.