Semiconductor storage device and manufacturing method thereof

1. A semiconductor storage device comprising: a first stacked body comprising a plurality of first electrode layers and a plurality of first insulating layers that are alternately stacked on a substrate in a first direction perpendicular to the substrate; a plurality of semiconductor films penetrating the first stacked body in the first direction; a second stacked body comprising a plurality of second electrode layers and a plurality of second insulating layers that are alternately stacked on the first stacked body in the first direction; and a plurality of contact plugs penetrating the second stacked body in the first direction and separately connected to the respective plurality of semiconductor films and the respective plurality of second electrode layers, wherein the plurality of contact plugs each comprise a first columnar portion and a second columnar portion having a larger diameter than the first columnar portion, the first columnar portion having a lower end connected to the semiconductor film, the first columnar portion having an upper end connected to a lower end of the second columnar portion, the second electrode layers each being connected to the contact plug at a boundary portion between the first columnar portion and the second columnar portion.

2. The semiconductor storage device according to claim 1, wherein a side surface of the first columnar portion and a side surface of the second columnar portion are each covered with an insulating film.

3. A semiconductor storage device comprising: a first stacked body comprising a plurality of first electrode layers and a plurality of first insulating layers that are alternately stacked on a substrate in a first direction perpendicular to the substrate; a plurality of semiconductor films penetrating the first stacked body in the first direction; a second stacked body comprising a plurality of second electrode layers and a plurality of second insulating layers that are alternately stacked on the first stacked body in the first direction; and a plurality of contact plugs penetrating the second stacked body in the first direction and separately connected to the respective plurality of semiconductor films and the respective plurality of second electrode layers, wherein the plurality of semiconductor films are arranged in a second direction orthogonal to the first direction, and the plurality of second electrode layers are provided for a row of the semiconductor films.

4. A semiconductor storage device comprising: a first stacked body comprising a plurality of first electrode layers and a plurality of first insulating layers that are alternately stacked on a substrate in a first direction perpendicular to the substrate; a plurality of semiconductor films penetrating the first stacked body in the first direction; a second stacked body comprising a plurality of second electrode layers and a plurality of second insulating layers that are alternately stacked on the first stacked body in the first direction; and a plurality of contact plugs penetrating the second stacked body in the first direction and separately connected to the respective plurality of semiconductor films and the respective plurality of second electrode layers, wherein the plurality of first electrode layers are each a word line and the plurality of second electrode layers are each a bit line.

5. A manufacturing method of a semiconductor storage device, the manufacturing method comprising: forming a first stacked body and a plurality of semiconductor films on a substrate, the first stacked body comprising a plurality of first electrode layers and a plurality of first insulating layers that are alternately stacked in a first direction, the plurality of semiconductor films penetrating the first stacked body in the first direction; forming a second stacked body on the first stacked body, the second stacked body comprising a plurality of second electrode layers and a plurality of second insulating layers that are alternately stacked in the first direction; forming a plurality of contact holes penetrating the second stacked body in the first direction; and forming, in the plurality of contact holes, a plurality of contact plugs separately connecting the plurality of semiconductor films and the plurality of second electrode layers, wherein the forming the plurality of contact holes comprises forming a plurality of first contact holes with respective different depths, forming a sacrificial layer on a side surface of each of the first contact holes, and forming second contact holes that are in communication with the respective first contact holes by using the sacrificial layer as a mask.

6. A manufacturing method of a semiconductor storage device, the manufacturing method comprising: forming a first stacked body and a plurality of semiconductor films on a substrate, the first stacked body comprising a plurality of first electrode layers and a plurality of first insulating layers that are alternately stacked in a first direction, the plurality of semiconductor films penetrating the first stacked body in the first direction; forming a second stacked body on the first stacked body, the second stacked body comprising a plurality of second electrode layers and a plurality of second insulating layers that are alternately stacked in the first direction; forming a plurality of contact holes penetrating the second stacked body in the first direction; and forming, in the plurality of contact holes, a plurality of contact plugs separately connecting the plurality of semiconductor films and the plurality of second electrode layers, wherein the forming the plurality of contact holes comprises forming a plurality of first contact holes with respective different opening diameters, forming a sacrificial layer on a side surface of each of the first contact holes, and forming second contact holes that are in communication with the respective first contact holes by using the sacrificial layer as a mask, and uppermost one of the second electrode layers and one of the contact plugs connected to the uppermost one of the second electrode layers are simultaneously formed.