Semiconductor device and manufacturing method thereof

The disclosure is related to a semiconductor device, and in particular, to a semiconductor device including a high-electron-mobility transistor (HEMT).

A semiconductor component including a direct band gap, for example, a semiconductor component including a group III-V material or group III-V compounds, may operate or work under a variety of conditions or environments (for example, different voltages or frequencies) due to its characteristics.

The foregoing semiconductor component may include a HEMT, a heterojunction bipolar transistor (HBT), a heterojunction field effect transistor (HFET), or a modulation-doped field effect transistor (MODFET).

Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor layer; a dielectric layer disposed on the first nitride semiconductor layer and in direct contact with the first nitride semiconductor layer and the second nitride semiconductor layer; a gate electrode separated from the first nitride semiconductor layer and the second nitride semiconductor layer by the dielectric layer; a first conductive contact disposed on the first nitride semiconductor layer; and a second conductive contact disposed on the second nitride semiconductor layer; wherein the second conductive contact is formed between the gate electrode and the first conductive contact.

Some embodiments of the disclosure provide a method for fabricating a semiconductor device. The method comprises: providing a substrate; forming a first nitride semiconductor layer on the substrate; forming a second nitride semiconductor layer having a band gap larger than a band gap of the first nitride semiconductor layer on the first nitride semiconductor layer; forming a dielectric layer on the first nitride semiconductor layer and in direct contact with the first nitride semiconductor layer and the second nitride semiconductor layer, and forming a gate electrode on the dielectric layer, wherein the dielectric layer includes an L-shape structure, and wherein the gate electrode is separated from the first nitride semiconductor layer and the second nitride semiconductor layer by the dielectric layer.

Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor layer; a dielectric layer disposed on the first nitride semiconductor layer and in direct contact with the first nitride semiconductor layer and the second nitride semiconductor layer; a gate electrode separated from the first nitride semiconductor layer and the second nitride semiconductor layer by the dielectric layer; a first conductive contact disposed on the first nitride semiconductor layer; a second conductive contact disposed on the second nitride semiconductor layer; and a third conductive contact surrounded by the second nitride semiconductor layer, wherein the second conductive.

The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below. Certainly, these descriptions are merely examples and are not intended to be limiting. In the disclosure, in the following descriptions, the description of the first feature being formed on or above the second feature may include an embodiment in which the first feature and the second feature are formed to be in direct contact, and may further include an embodiment in which an additional feature may be formed between the first feature and the second feature to enable the first feature and the second feature to be not in direct contact. In addition, in the disclosure, reference numerals and/or letters may be repeated in examples. This repetition is for the purpose of simplification and clarity, and does not indicate a relationship between the described various embodiments and/or configurations.

The embodiments of the disclosure are described in detail below. However, it should be understood that many applicable concepts provided by the disclosure may be implemented in a plurality of specific environments. The described specific embodiments are only illustrative and do not limit the scope of the disclosure.

A direct band gap material, such as a group III-V compound, may include but is not limited to, for example, gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), Indium gallium arsenide (InGaAs), Indium aluminum arsenide (InAlAs), and the like.

is a side view of a semiconductor deviceaccording to some embodiments of the disclosure.

As shown in, the semiconductor devicemay include a substrate, a buffer layer, a semiconductor layer, a semiconductor layer, a dielectric layer, a conductive structure, a conductive structure, a conductive structure, a conductive structureand a passivation layer. The structure within the dotted rectangle A is further illustrated inaccording to some embodiments of the disclosure. The structure within the dotted rectangle A is further illustrated inaccording to some embodiments of the disclosure. The structure within the dotted rectangle B is further illustrated inaccording to some embodiments of the disclosure. The structure within the dotted rectangle B is further illustrated inaccording to some embodiments of the disclosure. The structure within the dotted rectangle B is further illustrated inaccording to some embodiments of the disclosure.

The substratemay include, for example, but is not limited to, silicon (Si), doped silicon (doped Si), silicon carbide (SiC), germanium silicide (SiGe), gallium arsenide (GaAs), or another semiconductor material. In some embodiments, the substratemay include an intrinsic semiconductor material. In some embodiments, the substratemay include a p-type semiconductor material. In some embodiments, the substratemay include a silicon layer doped with boron (B). In some embodiments, the substratemay include a silicon layer doped with gallium (Ga). In some embodiments, the substratemay include an n-type semiconductor material. In some embodiments, the substratemay include a silicon layer doped with arsenic (As). In some embodiments, the substratemay include a silicon layer doped with phosphorus (P).

The buffer layermay be disposed on the substrate. In some embodiments, the buffer layermay include nitrides. In some embodiments, the buffer layermay include, for example, but is not limited to, aluminum nitride (AlN). In some embodiments, the buffer layermay include, for example, but is not limited to, aluminum gallium nitride (AlGaN). The buffer layermay include a multilayer structure. The buffer layermay include a superlattice layer with periodic structure of two or more materials. The buffer layermay include a single layer structure.

The semiconductor layermay be disposed on the buffer layer. The semiconductor layermay include group III-V materials. The semiconductor layermay be a nitride semiconductor layer. The semiconductor layermay include, for example, but is not limited to, group III nitride. The semiconductor layermay include, for example, but is not limited to, GaN. The semiconductor layermay include, for example, but is not limited to, AlN. The semiconductor layermay include, for example, but is not limited to, InN. The semiconductor layermay include, for example, but is not limited to, compound InAlGa,N, where x+y≤1. The semiconductor layermay include, for example, but is not limited to, compound AlGaN, where y≤1.

The semiconductor layermay be disposed on the semiconductor layer. The semiconductor layermay include group III-V materials. The semiconductor layermay be a nitride semiconductor layer. The semiconductor layermay include, for example, but is not limited to, group III nitride. The semiconductor layermay include, for example, but is not limited to, compound AlGaN, where y≤1. The semiconductor layermay include, for example, but is not limited to, GaN. The semiconductor layermay include, for example, but is not limited to, AlN. The semiconductor layermay include, for example, but is not limited to, InN. The semiconductor layermay include, for example, but is not limited to, compound InAlGa,N, where x+y≤1.

A heterojunction may be formed between the semiconductor layerand the semiconductor layer. The semiconductor layermay have a band gap greater than a band gap of the semiconductor layer. For example, the semiconductor layermay include AlGaN that may have a band gap of about 4 eV, and the semiconductor layermay include GaN that may have a band gap of about 3.4 eV.

In the semiconductor device, the semiconductor layermay be used as a channel layer. In the semiconductor device, the semiconductor layermay be used as a channel layer disposed on the buffer layer. In the semiconductor device, the semiconductor layermay be used as a barrier layer. In the semiconductor device, the semiconductor layermay be used as a barrier layer disposed on the semiconductor layer.

When the semiconductor layercontacts the semiconductor layer, electrons will flow from the semiconductor layerinto the semiconductor layer, accumulate at the interface and form two dimensional electron gas (2DEG). In the semiconductor device, because the band gap of the semiconductor layeris less than the band gap of the semiconductor layer, 2DEG may be formed in the semiconductor layer. In the semiconductor device, because the band gap of the semiconductor layeris less than the band gap of the semiconductor layer, 2DEG may be formed in the semiconductor layerand the 2DEG is close to the interface of the semiconductor layerand the semiconductor layer. In the semiconductor device, because the band gap of the semiconductor layeris greater than the band gap of the semiconductor layer, 2DEG may be formed in the semiconductor layer. In the semiconductor device, because the band gap of the semiconductor layeris greater than the band gap of the semiconductor layer, 2DEG may be formed in the semiconductor layerand the 2DEG is close to the interface of the semiconductor layerand the semiconductor layer.

The dielectric layermay be disposed on the semiconductor layer. The dielectric layermay be in direct contact with the semiconductor layer. The dielectric layermay be in direct contact with the semiconductor layer. The dielectric layermay be in direct contact with the semiconductor layerand the semiconductor layer. The dielectric layermay separate the conductive structurefrom the semiconductor layer. The dielectric layermay separate the conductive structurefrom the semiconductor layerfor forming a metal-insulator-semiconductor (MIS) structure. The dielectric layermay separate the conductive structurefrom the semiconductor layerfor reducing gate leakage. The dielectric layermay separate the conductive structurefrom the semiconductor layer. The dielectric layermay separate the conductive structurefrom the conductive structure. The dielectric layermay separate the conductive structurefrom the conductive structure. The dielectric layermay separate the conductive structurefrom the conductive structure. The dielectric layermay include a high-k dielectric material. The dielectric layermay include a high-k dielectric material for depleting the 2DEG in the semiconductor layer. The dielectric layermay include a high-k dielectric material for depleting the 2DEG in the semiconductor layerand adjacent to the dielectric layer. The dielectric layermay include, for example, but is not limited to, hafnium oxide (HfO). The dielectric layermay include, for example, but is not limited to, silicon nitride (SiN). The dielectric layermay include, for example, but is not limited to, zirconium oxide (ZrO). The dielectric layermay include, for example, but is not limited to, yttrium oxide (YO). The dielectric layermay electrically isolate the conductive structure. The dielectric layermay electrically isolate the conductive structurefrom the conductive structure. The dielectric layermay have a thickness between approximately 1 nm and approximately 10 nm. The dielectric layermay have a thickness between approximately 3 nm and approximately 8 nm. The dielectric layermay have a thickness of about 5 nm.

The conductive structuremay be disposed on the semiconductor layer. The conductive structuremay be disposed on the dielectric layer. The conductive structuremay be in direct contact with the dielectric layer. The conductive structuremay be surrounded by the dielectric layer. The conductive structuremay be separated from the semiconductor layer. The conductive structuremay be separated from the semiconductor layerby the dielectric layer. The conductive structuremay be separated from the semiconductor layer. The conductive structuremay be separated from the semiconductor layerby the dielectric layer. The conductive structuremay be separated from the conductive structure. The conductive structuremay be separated from the conductive structureby the dielectric layer. The conductive structuremay be separated from the conductive structure. The conductive structuremay be separated from the conductive structureby the dielectric layer. The conductive structuremay be covered by the passivation layer. The conductive structuremay be overlaid by the passivation layer. The conductive structuremay be separated from the conductive structureby the passivation layer. The conductive structuremay be a conductive contact. The conductive structuremay include a metal. The conductive structuremay include, for example, but is not limited to, gold (Au), platinum (Pt), titanium (Ti), palladium (Pd), nickel (Ni), or tungsten (W). The conductive structuremay include a metal compound. The conductive structuremay include, for example, but is not limited to, TiN.

In the semiconductor device, the conductive structuremay be used as a gate electrode. In the semiconductor device, the conductive structuremay be configured to control the 2DEG in the semiconductor layer. In the semiconductor device, a voltage may be applied to the conductive structureto control the 2DEG in the semiconductor layer. In the semiconductor device, a voltage may be applied to the conductive structureto control the 2DEG in the semiconductor layerand below the conductive structure. In the semiconductor device, a voltage may be applied to the conductive structureto control the 2DEG in the semiconductor layerand adjacent to the dielectric layer. In the semiconductor device, a voltage may be applied to the conductive structureto control the connection or disconnection between the conductive structureand the conductive structure.

The conductive structuremay be disposed on the semiconductor layer. The conductive structuremay contact the semiconductor layer. The conductive structuremay be electrically connected to the semiconductor layer. The conductive structuremay be surrounded by the semiconductor layer. The conductive structuremay contact the semiconductor layer. The conductive structuremay be disposed on the semiconductor layer(not shown in). The conductive structuremay be electrically connected to the semiconductor layerthrough the semiconductor layer. The conductive structuremay be covered by the passivation layer. The conductive structuremay be overlaid by the passivation layer. The conductive structuremay be a conductive contact. The conductive structuremay include a conductive material. The conductive structuremay include a metal. The conductive structuremay include, for example, but is not limited to, Al. The conductive structuremay include, for example, but is not limited to, Ti. The conductive structuremay include a metal compound. The conductive structuremay include, for example, but is not limited to, AlN. The conductive structuremay include, for example, but is not limited to, TiN.

The conductive structuremay be disposed on the semiconductor layer. The conductive structuremay be disposed on the semiconductor layer. The conductive structuremay contact the semiconductor layer. The conductive structuremay be in direct contact with the semiconductor layer. The conductive structuremay be surrounded by the semiconductor layer. The conductive structuremay be electrically connected to the semiconductor layer. The conductive structuremay be electrically connected to the semiconductor layerthrough the semiconductor layer. The conductive structuremay be covered by the conductive structure. The conductive structuremay be overlaid by the conductive structure. The conductive structuremay contact the conductive structure. The conductive structuremay be in direct contact with the conductive structure. The conductive structuremay be covered by the passivation layer. The conductive structuremay be overlaid by the passivation layer. The conductive structuremay be disposed between the dielectric layerand the conductive structure. The conductive structuremay be disposed between the conductive structureand the conductive structure. The conductive structuremay be disposed between the dielectric layerand the conductive structureand closer to the dielectric layer. The conductive structuremay be disposed between the conductive structureand the conductive structureand closer to the conductive structure. The conductive structuremay be disposed between the semiconductor layerand the conductive structure. The conductive structuremay be disposed between the semiconductor layerand the conductive structure. The conductive structuremay be a conductive contact. The conductive structuremay include a conductive material. The conductive structuremay include a metal. The conductive structuremay include a metal with high work function. The conductive structuremay include, for example, but is not limited to, Ti. The conductive structuremay include, for example, but is not limited to, Au. The conductive structuremay include, for example, but is not limited to, Mo. The conductive structuremay include, for example, but is not limited to, Pt. The conductive structuremay include a metal compound. The conductive structuremay include, for example, but is not limited to, TiN. A Schottky barrier may be formed between the conductive structureand the semiconductor layer. The conductive structureand the semiconductor layermay form a Schottky contact. The conductive structureand the semiconductor layermay form a Schottky diode. The conductive structureand the semiconductor layermay form a Schottky barrier diode.

The conductive structuremay be disposed on the semiconductor layer. The conductive structuremay be disposed on the semiconductor layer. The conductive structuremay contact the semiconductor layer. The conductive structuremay be in direct contact with the semiconductor layer. The conductive structuremay be electrically connected to the semiconductor layer. The conductive structuremay be electrically connected to the semiconductor layerthrough the semiconductor layer. The conductive structuremay be disposed on the conductive structure. The conductive structuremay contact the conductive structure. The conductive structuremay be in direct contact with the conductive structure. The conductive structuremay be electrically connected to the conductive structure. The conductive structuremay be electrically connected to the semiconductor layerthrough the conductive structure. The conductive structuremay be electrically connected to the semiconductor layerthrough the conductive structureand the semiconductor layer. The conductive structuremay be separated from the conductive structure. The conductive structuremay be separated from the conductive structureby the dielectric layer. The conductive structuremay be covered by the passivation layer. The conductive structuremay be overlaid by the passivation layer. The conductive structuremay be separated from the conductive structureby the passivation layer. The conductive structuremay be separated from the conductive structureby the dielectric layerand the passivation layer. The conductive structuremay be a conductive contact. The conductive structuremay include a conductive material. The conductive structuremay include a metal. The conductive structuremay include, for example, but is not limited to, Al. The conductive structuremay include, for example, but is not limited to, Ti. The conductive structuremay include a metal compound. The conductive structuremay include, for example, but is not limited to, AlN. The conductive structuremay include, for example, but is not limited to, TiN. The conductive structuremay include a material different from that of the conductive structure. The conductive structuremay include a material identical to that of the conductive structure. The conductive structuremay include a material same as that of the conductive structure.

The passivation layermay be disposed on the semiconductor layer. The passivation layermay extend on the semiconductor layer. The passivation layermay cover the semiconductor layer. The passivation layermay be disposed on the dielectric layer. The passivation layermay cover the dielectric layer. The passivation layermay be disposed on the conductive structure. The passivation layermay cover the conductive structure. The passivation layermay be disposed on the conductive structure. The passivation layermay cover the conductive structure. The passivation layermay be disposed on the conductive structure. The passivation layermay cover the conductive structure. The passivation layermay be disposed on the conductive structure. The passivation layermay cover the conductive structure. The passivation layermay separate the conductive structurefrom the conductive structure. The passivation layermay separate the conductive structurefrom the conductive structure. The passivation layermay separate the conductive structurefrom the conductive structure. The passivation layermay include a dielectric material. The passivation layermay include a non-group III-V dielectric material. The passivation layermay include nitride. The passivation layermay include, for example, but is not limited to, silicon nitride (SiN). The passivation layermay include oxide. The passivation layermay include, for example, but is not limited to, silicon oxide (SiO). The passivation layermay electrically isolate the conductive structure. The passivation layermay electrically isolate the conductive structure. The passivation layermay electrically isolate the conductive structure. The passivation layermay electrically isolate the conductive structure.

The conductive structuremay be used as a gate electrode of the semiconductor device, the conductive structuremay be used as a drain electrode of the semiconductor device, and the conductive structuremay be used as a source electrode of the semiconductor device. Although the conductive structurewhich may be used as a gate electrode and the conductive structurewhich may be used as a drain electrode are respectively disposed on both sides of the conductive structurewhich may be used as a source electrode in, the conductive structure, the conductive structure, and the conductive structuremay be disposed differently in other embodiments of the disclosure according to design requirements. The conductive structuremay be used as a gate electrode of the semiconductor device, the conductive structuremay be used as a drain electrode of the semiconductor device, and the conductive structurewith the conductive structuremay be used as a source electrode of the semiconductor device. Although the conductive structurewhich may be used as a gate electrode and the conductive structurewhich may be used as a drain electrode are respectively disposed on both sides of the conductive structurewith the conductive structurewhich may be used as a source electrode in, the conductive structure, the conductive structure, and the conductive structurewith the conductive structuremay be disposed differently in other embodiments of the disclosure according to design requirements.

is an enlarged side view of structure in the dotted rectangular A as shown inaccording to some embodiments of the disclosure.

As shown in, the semiconductor layer, the semiconductor layer, the dielectric layer, the conductive structure, the conductive structure, and the passivation layermay be included in the dotted rectangular A.

The semiconductor layermay have a sidewallL. The sidewallL may be vertical from the side view. The sidewallL may be in direct contact with the dielectric layer. The semiconductor layermay have a sidewallL. The sidewallL may be vertical from the side view. The sidewallL may be in direct contact with the dielectric layer. The sidewallL may be aligned with the sidewallL.

The dielectric layermay include a portionand a portion. The portionmay be horizontal from the side view. The portionmay be in parallel with the semiconductor layer. The portionmay be in parallel with the semiconductor layer. The portionmay separate the semiconductor layerfrom the conductive structure. The portionmay electrically isolate the conductive structurefrom the semiconductor layer. The portionmay reduce leakage current. The portionmay reduce leakage current from the conductive structure. The portionmay be vertical from the side view. The portionmay be in perpendicular to the semiconductor layer. The portionmay be in perpendicular to the semiconductor layer. The portionmay separate the semiconductor layerfrom the conductive structure. The portionmay electrically isolate the conductive structurefrom the semiconductor layer. The portionmay separate the semiconductor layerfrom the conductive structure. The portionmay electrically isolate the conductive structurefrom the semiconductor layer. The portionmay be in direct contact with the sidewallL. The portionmay be in direct contact with the sidewallL. The portionmay be in direct contact with the sidewallL and the sidewallL. The portionmay reduce leakage current. The portionmay reduce leakage current from the conductive structure. The portionmay be perpendicular to the portion. The portionand the portionmay form an L-shape structure. The portionand the portionmay form a step shape structure. The dielectric layermay include an L-shape structure. The dielectric layermay include a step shape structure. A gate leakage current may be prevented if the conductive structurewhich is used as a gate electrode is separated from the semiconductor layerby the portion. A gate leakage current may be prevented if the conductive structurewhich is used as a gate electrode is separated from the semiconductor layerby the portion.

The conductive structuremay have a sidewallL. The sidewallL may be vertical from the side view. The sidewallL may be in direct contact with the passivation layer. The sidewallL may be aligned with the sidewallL. The sidewallL may be aligned with the sidewallL. The sidewallL may be aligned with the sidewallL and the sidewallL. The sidewallL may be separated from the conductive structure. The sidewallL may be separated from the conductive structureby the dielectric layer. The sidewallL may be separated from the conductive structureby the passivation layer. The sidewallL may be separated from the conductive structureby the dielectric layerand the passivation layer.

is an enlarged side view of structure in the dotted rectangular A as shown inaccording to some embodiments of the disclosure.

is similar to, but differs in that the conductive structureshown inis replaced by the conductive structure′. The conductive structure′ may be different from the conductive structure.

The conductive structure′ may be disposed on the semiconductor layer. The conductive structure′ may be disposed on the semiconductor layer. The conductive structure′ may contact the semiconductor layer. The conductive structure′ may be in direct contact with the semiconductor layer. The conductive structure′ may be disposed on the dielectric layer. The conductive structure′ may contact the dielectric layer. The conductive structure′ may be disposed on the portion. The conductive structure′ may contact the portion.

The conductive structure′ may have a sidewall′L. The sidewall′L may be vertical from the side view. The sidewall′L may be in direct contact with the passivation layer. The sidewall′L may be disposed on the dielectric layer. The sidewall′L may be disposed on the portion. The sidewall′L may be in direct contact with the passivation layer. The sidewall′L may be separated from the conductive structure. The sidewall′L may be separated from the conductive structureby the dielectric layer. The sidewall′L may be separated from the conductive structureby the passivation layer. The sidewall′L may be separated from the conductive structureby the dielectric layerand the passivation layer.

is an enlarged side view of structure in the dotted rectangular B as shown inaccording to some embodiments of the disclosure.

As shown in, the semiconductor layer, the semiconductor layer, the conductive structure, the conductive structure, and the passivation layermay be included in the dotted rectangular B.

The conductive structuremay be surrounded by the semiconductor layerand covered by the conductive structure. The conductive structuremay be surrounded by the semiconductor layerand overlaid by the conductive structure. The conductive structuremay have a sidewallR. The sidewallR may be vertical from the side view. The sidewallR may be in direct contact with the semiconductor layer. The conductive structuremay have a sidewallR. The sidewallR may be vertical from the side view. The sidewallR may be in direct contact with the passivation layer. The sidewallR may be aligned with the sidewallR.

The semiconductor layermay have a thickness T. The thickness Tmay include a distance between the semiconductor layerand the conductive structure. The thickness Tmay include a distance between an interface of the semiconductor layerand the semiconductor layerand an interface of the conductive structureand the semiconductor layer. The thickness Tmay be less than 100 nm. The thickness Tmay be no greater than 100 nm. The thickness Tmay be less than 50 nm. The thickness Tmay be no greater than 50 nm. The thickness Tmay range between approximately 5 nm and approximately 20 nm. The thickness Tmay range between approximately 10 nm and approximately 15 nm.

The conductive structuremay have a thickness T. The thickness Tmay include a distance between the semiconductor layerand the conductive structure. The thickness Tmay include a distance between an interface of the semiconductor layerand the conductive structureand an interface of the conductive structureand the conductive structure. The thickness Tmay be greater than 100 nm. The thickness Tmay be no less than 100 nm. The thickness Tmay be greater than 50 nm. The thickness Tmay be no less than 50 nm. The thickness Tand the thickness Tmay be equal. The thickness Tmay be greater than the thickness T. The thickness Tmay be smaller than the thickness T.

It should be noted that, the conductive structureand the semiconductor layermay form a metal-semiconductor junction with rectifying characteristics. The conductive structureand the semiconductor layermay form a Schottky barrier. The conductive structureand the semiconductor layermay form a Schottky barrier with rectification.

is an enlarged side view of structure in the dotted rectangular B as shown inaccording to some embodiments of the disclosure.

is similar to, but differs in that the conductive structureshown inis replaced by the conductive structure′. The conductive structure′ may be different from the conductive structure.

The conductive structure′ may be disposed on the semiconductor layer. The conductive structure′ may be disposed on the semiconductor layer. The conductive structure′ may contact the semiconductor layer. The conductive structure′ may be in direct contact with the semiconductor layer. The conductive structure′ may be surrounded by the semiconductor layer. The conductive structure′ may be covered by the conductive structure. The conductive structure′ may be overlaid by the conductive structure. The conductive structure′ may be covered by the passivation layer. The conductive structure′ may be overlaid by the passivation layer. The conductive structure′ may be covered by the conductive structureand the passivation layer. The conductive structure′ may be overlaid by the conductive structureand the passivation layer. The conductive structure′ may be in direct contact with the conductive structure. The conductive structure′ may extend toward the conductive structureas shown in. A portion of the conductive structure′ may be in direct contact with the passivation layer. A portion of the conductive structure′ is not overlaid by the conductive structure.

is an enlarged side view of structure in the dotted rectangular B as shown inaccording to some embodiments of the disclosure.

is similar to, but differs in that the conductive structureshown inis replaced by the conductive structure″. The conductive structure″ may be different from the conductive structure.

The conductive structure″ may be disposed on the semiconductor layer. The conductive structure″ may be disposed on the semiconductor layer. The conductive structure″ may contact the semiconductor layer. The conductive structure″ may be in direct contact with the semiconductor layer. The conductive structure″ may be surrounded by the semiconductor layer. The conductive structure″ may be covered by the conductive structure. The conductive structure″ may be overlaid by the conductive structure. The conductive structure″ may be entirely covered by the conductive structure. The conductive structure″ may be completely overlaid by the conductive structure. The conductive structure″ may be in direct contact with the conductive structure.

is a top view of a semiconductor deviceaccording to some embodiments of the disclosure.

As shown in, the semiconductor devicemay include a dielectric layer, a conductive structure, a conductive structure, a conductive structure, and a conductive structure.

The conductive structuremay include a rectangular shape from the top view. The conductive structuremay include a substantially rectangular shape from the top view. The conductive structuremay include a cuboid structure. The conductive structuremay include a substantially cuboid structure. The conductive structuremay be under the conductive structure. The conductive structuremay be beneath the conductive structure. The conductive structuremay be in direct contact with the conductive structure. The conductive structuremay be closer to the conductive structurethan the conductive structure.