Micro-LED structure and micro-LED chip including same

This application claims the benefit of priority to U.S. Provisional Application No. 63/131,128, filed on Dec. 28, 2020, the entire contents of which are incorporated herein by reference.

The present disclosure relates to a micro-LED structure and a micro-LED chip including the micro-LED structure.

A micro-light emitting diode (micro-LED) is a device that emits light using an electric signal and has a size on the order of micrometers or even smaller. The micro-LED can be driven at a low voltage such that it is widely implemented in small-sized optical elements. In recent years, the micro-LED has been developed as an illuminating light source by increasing its efficiency.

According to one aspect of embodiments of the present disclosure, a micro-LED structure includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. The bottom edge of the second type conductive layer is aligned with the top edge of the first type conductive layer.

According to another aspect of embodiments of the present disclosure, a micro-LED structure includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extrudes along a horizontal level away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. A profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by the top edge of the first type conductive layer.

According to another aspect of embodiments of the present disclosure, a micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by the bottom edge of the second type conductive layer.

According to another aspect of embodiments of the present disclosure, a micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the first type conductive layer. An edge of the light emitting layer is aligned with an edge of the second type conductive layer. The edge of the second type conductive layer extends along the horizontal level away from the edge of the first type conductive layer.

According to another aspect of embodiments of the present disclosure, a micro-LED structure includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the second type conductive layer. An edge of the light emitting layer is aligned with an edge of the first type conductive layer. The edge of the first type conductive layer extends along the horizontal level away from the edge of the second type conductive layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is above a bottom surface of the bottom spacer and is under the light emitting layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. at least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface under the bottom spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further comprises: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes an isolation structure formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer. A bottom surface of the isolation structure is aligned with a bottom of the light emitting layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the light emitting layer, and a top surface of the isolation structure is above the light emitting layer and under the top surface of the top spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the light emitting layer, and a top surface of the isolation structure is aligned with a top surface of the top spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the light emitting layer, and a top surface of the isolation structure is above the top spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is above the light emitting layer and under a top surface of the top spacer, and a bottom surface of the isolation structure is under a bottom of the light emitting layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is above the light emitting layer and under a top surface of the top spacer, and a bottom surface of the isolation structure is under a bottom of the light emitting layer, and above a bottom surface of the bottom spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is above the light emitting layer and under a top surface of the top spacer, and a bottom surface of the isolation structure aligned with a bottom surface of the bottom spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is above the light emitting layer and under a top surface of the top spacer, and a bottom surface of the isolation structure is under the bottom spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is under the light emitting layer, and above a bottom surface of the bottom spacer, and a top surface of the isolation structure is aligned with a top surface of the top spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, and the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is under the light emitting layer, and above a bottom surface of the bottom spacer, and a top surface of the isolation structure is above the top spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, and the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A bottom surface of the isolation structure is aligned with a bottom of the light emitting layer, and a top surface of the isolation structure is aligned with a top surface of the light emitting layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, and the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer, and a top surface of the isolation structure is aligned with a top surface of the top spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is aligned with a top surface of the top spacer, and a bottom surface of the isolation structure is under the bottom spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer, and a top surface of the isolation structure is above the top spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is under the bottom spacer, and a top surface of the isolation structure is above the top spacer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A bottom edge of the second type conductive layer is aligned with a top edge of the first type conductive layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by an edge of the first type conductive layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by an edge of the second type conductive layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, at least one part of the light emitting layer being formed between adjacent micro-LEDs. the micro-LED chip further comprises a metal layer formed on the light emitting layer between the adjacent micro-LEDs.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and from a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer, and the bottom edge of the second type conductive layer is aligned with the top edge of the first type conductive layer. The micro-LED chip further includes a metal layer formed on the light emitting layer between adjacent micro-LEDs.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer, and a profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by an edge of the first type conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light emitting layer that extends from the top edge of the first type conductive layer.

According to another aspect of embodiments of the present disclosure, a micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not touch the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by the bottom edge of the second type conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light emitting layer that extends from the second type conductive layer.

The text below provides a detailed description of the present disclosure in conjunction with specific embodiments illustrated in the attached drawings. However, these embodiments do not limit the present disclosure. The scope of protection for the present disclosure covers changes made to the structure, method, or function by persons having ordinary skill in the art on the basis of these embodiments.

To facilitate the presentation of the drawings in the present disclosure, the sizes of certain structures or portions may be enlarged relative to other structures or portions. Therefore, the drawings in the present application are only for the purpose of illustrating the basic structure of the subject matter of the present application. The same numbers in different drawings represent the same or similar elements unless otherwise represented.

Additionally, terms in the text indicating relative spatial position, such as “front,” “back,” “upper,” “lower,” “above,” “below,” and so forth, are used for explanatory purposes in describing the relationship between a unit or feature depicted in a drawing and another unit or feature therein. Terms indicating relative spatial position may refer to positions other than those depicted in the drawings when a device is being used or operated. For example, if a device shown in a drawing is flipped over, a unit which is described as being positioned “below” or “under” another unit or feature will be located “above” the other unit or feature. Therefore, the illustrative term “below” may include positions both above and below. A device may be oriented in other ways (rotated 90 degrees or facing another direction), and descriptive terms that appear in the text and are related to space should be interpreted accordingly. When a component or layer is said to be “above” another member or layer or “connected to” another member or layer, it may be directly above the other member or layer or directly connected to the other member or layer, or there may be an intermediate component or layer.

1 FIG.A 1 FIG.A 1000 1000 101 102 101 103 101 102 103 101 101 102 102 103 103 101 101 102 102 102 102 101 101 a a a a a a a is a cross-sectional view of a micro-light emitting diode (micro-LED) structure, according to a first embodiment of the present disclosure. As illustrated in, the micro-LED structureincludes a first type conductive layer, a second type conductive layerstacked on the first type conductive layer, and a light emitting layerformed between the first type conductive layerand the second type conductive layer. The light emitting layerextends along a horizontal level away from a top edgeof the first type conductive layerand a bottom edgeof the second type conductive layer, such that an edgeof the light emitting layerand does not contact the top edgeof the first type conductive layerand the bottom edgeof the second type conductive layer. The bottom edgeof the second type conductive layeris aligned with the top edgeof the first type conductive layer.

101 102 101 102 101 102 101 101 102 102 1 FIG.A The first type conductive layerand the second type conductive layermay be any type of conductive layers. In one embodiment, the first type conductive layermay be an n-type conductive semiconductor containing one or more n-type dopants, and the second type conductive layermay be a p-type conductive semiconductor layer containing one or more p-type dopants. In another embodiment, the first type conductive layermay be a p-type conductive semiconductor, and the second type conductive layermay be an n-type conductive semiconductor layer. As illustrated in, a top area of the first type conductive layeris larger than a bottom area of the first type conductive layer. A top area of the second type conductive layeris smaller than a bottom area of the second type conductive layer.

103 103 103 The light emitting layermay have a quantum well structure in which quantum well layers and barrier layers are alternately stacked. In one embodiment, the light emitting layermay include one pair of quantum well layers and a barrier layer interposed between the quantum well layers. In another embodiment, the light emitting layermay include multiple pairs of quantum well layers and a barrier layer interposed between adjacent quantum well layers. The quantum well layers are made of, for example, GaAs, AlGaAs, InGaAs, GaAsP, AlGaInP, GaInAsP, GaInP, AlInP, GaP, InP, or the like. The barrier layers are formed of, for example, GaAs, AlGaAs, InGaAs, GaAsP, AlGaInP, GaInAsP, GaInP, AlInP, GaP, InP, or the like.

1 FIG.A 1000 107 103 103 108 103 103 107 108 107 108 107 107 108 108 103 103 107 103 108 103 b c a a a As illustrated in, the micro-LED structurealso includes a top spacerformed on a top surfaceof the light emitting layer, and a bottom spacerformed on a bottom surfaceof the light emitting layer. The top spacerand the bottom spacermay be made of GaAs, AlGaAs, InGaAs, GaAsP, AlGaInP, GaInAsP, GaInP, AlInP, GaP, InP or the like. The top spacerand the bottom spacerare configured to control the carrier injection efficiency to improve the performance and reliability of the micro-LED. An edgeof the top spacerand an edgeof the bottom spacerare aligned with the edgeof the light emitting layer. A thickness of the top spaceris larger than a thickness of the light emitting layer. A thickness of the bottom spaceris larger than the thickness of the light emitting layer.

1 FIG.A 1000 104 101 104 101 101 104 101 110 110 104 110 110 104 101 101 104 102 b a a b In the embodiment illustrated in, the micro-LED structurefurther includes a reflective structuresurrounding the first type conductive layer. The reflective structureis attached on a sidewall surfaceof the first type conductive layer. The reflective structureon the sidewall of the first type conductive layeris inclined relative to a surfaceof a substrate. An inclined angle of the reflective structureis approximately 30° to approximately 75° relative to the surfaceof the substrate. The reflective structureon the sidewall surfaceof the first type conductive layeris made of an ODR (omnidirectional reflector) structure or a DBR (distributed bragg reflection) structure. The reflective structureis configured to focus light on the second type conductive layer.

1 FIG.A 1000 105 101 101 105 105 In the embodiment illustrated in, the micro-LED structurefurther includes a bottom connection structureformed under the first type conductive layer, and electrically connected with the first type conductive layer. The bottom connection structuremay be formed of electrically conductive material, such as, for example, metal. The bottom connection structuremay be reflective.

1 FIG.A 1000 110 101 105 106 110 110 110 106 As illustrated in, the micro-LED structurefurther includes the substrateunder the first type conductive layer, and is electrically connected with the bottom connection structureby a connecting padin the substrate. In some embodiments, the substratemay be made of one of more of the materials from the III-V groups, such as, for example, GaN. In some other embodiments, the substratemay include an IC circuit. The connecting padmay be made of conductive materials, such as, for example, Cu.

1 FIG.A 1000 109 101 103 109 2 3 4 As illustrated in, the micro-LED structurefurther includes an isolation layersurrounding the first type conductive layerand under the light emitting layer. The isolation layermay be made of a light absorption material which includes, for example, impurity doped SiOor SiN.

1 FIG.A 1000 111 102 107 107 111 103 b As illustrated in, the micro-LED structurefurther includes a microlensformed on the second type conductive layerand on a top surface ofthe top spacer. The microlensis configured to converge light emitted by the light emitting layer.

1 FIG.B 1 FIG.B 1 FIG.A 1 FIG.B 1 FIG.A 1001 101 101 1041 101 101 104 1041 1001 1000 b b a is a cross-sectional view of a micro-LED structure, according to a first variation of the first embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the sidewall surfaceof the first type conductive layeris curved, and a reflective structureis formed on the sidewall surfaceof the first type conductive layerhas a curved surface. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

1 FIG.C 1 FIG.C 1 FIG.A 1 FIG.C 1 FIG.A 1002 1042 101 101 1042 105 1042 1042 1042 101 101 1042 1002 1000 c c is a cross-sectional view of a micro-LED structure, according to a second variation of the first embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that a reflective structureis attached on a bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the reflective structure. The reflective structureon the bottom surfaceof the first type conductive layermay be made of metal. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

1 FIG.D 1 FIG.D 1 FIG.A 1 FIG.D 1 FIG.A 1003 1043 101 101 101 1043 105 1043 1043 1043 1003 1000 b c is a cross-sectional view of a micro-LED structure, according to a third variation of the first embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that a reflective structureis attached on both of the sidewall surfaceand the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the reflective structure. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

2 FIG.A 2 FIG.A 1 FIG.A 2 FIG.A 1 FIG.A 2000 102 102 101 101 102 101 101 101 101 2000 1000 a a d a is a cross-sectional view of a micro-LED structure, according to a second embodiment of the present disclosure. The second embodiment illustrated indiffers from the first embodiment illustrated inin that the bottom edgeof the second type conductive layeris not aligned with the top edgeof the first type conductive layer. Instead, a profile of the second type conductive layerperpendicularly projected on the top surfaceof the first type conductive layeris surrounded by the top edgeof the first type conductive layer. The components of the micro-LED structureof the second embodiment illustrated inare the same as the components of the micro-LED structureof the first embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

2 FIG.B 2 FIG.B 2 FIG.A 2 FIG.B 2 FIG.A 2001 101 101 1041 101 101 104 1041 2001 2000 b b a is a cross-sectional view of a micro-LED structure, according to a first variation of the second embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the sidewall surfaceof the first type conductive layeris curved, and the reflective structureis formed on the sidewall surfaceof the first type conductive layerhas the curved surface. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

2 FIG.C 2 FIG.C 2 FIG.A 2 FIG.C 2 FIG.A 2002 1042 101 101 1042 105 1042 1042 1042 101 101 1042 2002 2000 c c is a cross-sectional view of a micro-LED structure, according to a second variation of the second embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the reflective structureis attached on the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the bottom of the reflective structure. The reflective structureon the bottom surfaceof the first type conductive layermay be made of metal. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

2 FIG.D 2 FIG.D 2 FIG.A 2 FIG.D 2 FIG.A 2003 1043 101 101 101 1043 105 1043 1043 1043 2003 2000 b c is a cross-sectional view of a micro-LED structure, according to a third variation of the second embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the reflective structureis attached on both of the sidewall surfaceand the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the reflective structure. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

3 FIG.A 3 FIG.A 1 FIG.A 3 FIG.A 1 FIG.A 3000 102 102 101 101 101 102 102 102 102 3000 1000 a a b a is a cross-sectional view of a micro-LED structure, according to a third embodiment of the present disclosure. The third embodiment illustrated indiffers from the first embodiment illustrated inin that the bottom edgeof the second type conductive layeris not aligned with the top edgeof the first type conductive layer. Instead, a profile of the first type conductive layerperpendicularly projected on a bottom surfaceof the second type conductive layeris surrounded by the bottom edgeof the second type conductive layer. The components of the micro-LED structureof the third embodiment illustrated inare the same as the components of the micro-LED structureof the first embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

3 FIG.B 3 FIG.B 3 FIG.A 3 FIG.B 3 FIG.A 3001 101 101 1041 101 101 104 104 3001 3000 b b a is a cross-sectional view of a micro-LED structure, according to a first variation of the third embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the sidewall surfaceof the first type conductive layeris curved, and the reflective structureis formed on the sidewall surfaceof the first type conductive layerhas the curved surface. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

3 FIG.C 3 FIG.C 3 FIG.A 3 FIG.C 3 FIG.A 3002 1042 101 101 1042 105 1042 1042 1042 101 101 1042 3002 3000 c c is a cross-sectional view of a micro-LED structure, according to a second variation of the third embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the reflective structureis attached on the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the bottom of the reflective structure. The reflective structureon the bottom surfaceof the first type conductive layermay be made of metal. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

3 FIG.D 3 FIG.D 3 FIG.A 3 FIG.D 3 FIG.A 3003 1043 101 101 101 1043 105 1043 1043 1042 3003 3000 b c is a cross-sectional view of a micro-LED structure, according to a third variation of the third embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the reflective structureis attached on both of the sidewall surfaceand the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the reflective structure. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

4 FIG.A 4 FIG.A 3 FIG.A 4 FIG.A 3 FIG.A 4000 103 101 101 103 103 102 102 4000 114 103 114 114 4000 111 102 114 114 4000 3000 a a a a 2 3 4 2 3 2 2 is a cross-sectional view of a micro-LED structure, according to a fourth embodiment of the present disclosure. The fourth embodiment illustrated indiffers from the third embodiment illustrated inin that the light emitting layerextends along a horizontal level away from the top edgeof the first type conductive layer, and the edgeof the light emitting layeris aligned with the bottom edgeof the second type conductive layer. In addition, the micro-LED structurefurther includes a top isolation layersurrounding the light emitting layer. The top isolation layermay be made of one or more electrical insulating dielectric materials, such as, for example, SiO, SiN, AlO, TiO, HfO, AlN or the like. The top isolation layeris configured to isolate the micro-LED structurefrom an adjacent micro-LED structure (not shown). The microlensis formed on the second type conductive layerand on a top surfaceof the isolation layer. The other components of the micro-LED structureof the fourth embodiment illustrated inare the same as the components of the micro-LED structureof the first embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

4 FIG.B 4 FIG.B 4 FIG.A 4 FIG.B 4 FIG.A 4001 101 101 1041 101 101 104 1041 4001 4000 b b a is a cross-sectional view of a micro-LED structure, according to a first variation of the fourth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the sidewall surfaceof the first type conductive layeris curved, and the reflective structureis formed on the sidewall surfaceof the first type conductive layerand has the curved surface. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

4 FIG.C 4 FIG.C 4 FIG.A 4 FIG.C 4 FIG.A 4002 1042 101 101 1042 105 1042 1042 1042 101 101 1042 4002 4000 c c is a cross-sectional view of a micro-LED structure, according to a second variation of the fourth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the reflective structureis attached on the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the bottom of the reflective structure. The reflective structureon the bottom surfaceof the first type conductive layermay be made of metal. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

4 FIG.D 4 FIG.D 4 FIG.A 4 FIG.D 4 FIG.A 4003 1043 101 101 101 1043 105 1043 1043 1042 4003 4000 b c is a cross-sectional view of a micro-LED structure, according to a third variation of the fourth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the reflective structureis attached on both of the sidewall surfaceand the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the reflective structure. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

5 FIG.A 5 FIG.A 2 FIG.A 5 FIG.A 2 FIG.A 5000 103 102 102 103 103 101 101 4000 114 103 111 102 114 114 5000 2000 a a a a is a cross-sectional view of a micro-LED structure, according to a fifth embodiment of the present disclosure. The fifth embodiment illustrated indiffers from the second embodiment illustrated inin that the light emitting layerextends along a horizontal level from the bottom edgeof the second type conductive layer, and the edgeof the light emitting layeris aligned with the top edgeof the first type conductive layer. In addition, the micro-LED structurefurther includes the top isolation layersurrounding the light emitting layer. The microlensis formed on the second type conductive layerand on the top surfaceof the isolation layer. The other components of the micro-LED structureof the fourth embodiment illustrated inare the same as the components of the micro-LED structureof the second embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

5 FIG.B 5 FIG.B 5 FIG.A 5 FIG.B 5 FIG.A 5001 101 101 1041 101 101 104 1041 5001 5000 b b a is a cross-sectional view of a micro-LED structure, according to a first variation of the fifth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the sidewall surfaceof the first type conductive layeris curved, and the reflective structureformed on the sidewall surfaceof the first type conductive layerhas the curved surface. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

5 FIG.C 5 FIG.C 5 FIG.A 5 FIG.C 5 FIG.A 5002 1042 101 101 1042 105 1042 1042 1042 101 101 1042 5002 5000 c c is a cross-sectional view of a micro-LED structure, according to a second variation of the fifth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the reflective structureis attached on the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the bottom of the reflective structure. The reflective structureon the bottom surfaceof the first type conductive layeris made of metal. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

5 FIG.D 5 FIG.D 5 FIG.A 5 FIG.D 5 FIG.A 5003 1043 101 101 101 1043 105 1043 1043 1042 5003 5000 b c is a cross-sectional view of a micro-LED structure, according to a third variation of the fifth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the reflective structureis attached both on the sidewall surfaceand the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the reflective structure. Except for the reflective structure, the components of the micro-LED structureillustrated inare the same as the components of the micro-LED structureillustrated in, and therefore detailed descriptions of these components are not repeated.

6 FIG.A 6000 6000 6000 1000 1001 3003 is a cross-sectional view of a micro-LED chip, according to a sixth embodiment of the present disclosure. The micro-LED chipmay include multiple micro-LEDs. At least one of the micro-LEDs included in the micro-LED chipmay have any one of the micro-LED structures,, . . .described above.

6 FIG.A 1 FIG.A 6 FIG.A 6 FIG.A 6000 610 620 610 620 1000 610 620 610 1000 620 1000 In the embodiment illustrated in, the micro-LED chipincludes two micro-LEDsand. Each one of the micro-LEDsandincludes the micro-LED structuredescribed in the first embodiment illustrated in. Hereinafter in the description and in, the micro-LEDsandinare also referred to as micro-LEDs() and().

6 FIG.A 610 1000 620 1000 101 102 101 103 101 102 103 6000 610 1000 620 1000 103 103 101 101 102 102 103 103 101 101 102 102 102 102 101 101 a a a a a a a As illustrated in, each one of the micro-LEDs() and() includes the first type conductive layer, the second type conductive layerstacked on the first type conductive layer, and the light emitting layerformed between the first type conductive layerand the second type conductive layer. The light emitting layeris continuously formed on the whole micro-LED chip. The first and second micro-LEDs() and() share the light emitting layer. The light emitting layerextends along a horizontal level away from the top edgeof the first type conductive layerand the bottom edgeof the second type conductive layer, such that the edgeof the light emitting layerdoes not contact the top edgeof the first type conductive layerand the bottom edgeof the second type conductive layer. The bottom edgeof the second type conductive layeris aligned with the top edgeof the first type conductive layer.

6 FIG.A 610 1000 620 1000 107 103 103 108 103 103 107 108 6000 610 1000 620 1000 107 107 103 103 108 108 103 103 b c a a a a As illustrated in, each one of the micro-LEDs() and() also includes the top spacerformed on the top surfaceof the light emitting layer, and the bottom spacerformed on the bottom surfaceof the light emitting layer. Both of the top spacerand the bottom spacerare continuously formed on the whole micro-LED chip, and are shared by the first and second micro-LEDs() and(). The edgeof the top spaceris aligned with the edgeof the light emitting layer. The edgeof the bottom spaceris aligned with the edgeof the light emitting layer.

6 FIG.A 610 1000 620 1000 104 101 105 101 106 110 109 101 103 110 101 105 106 111 102 107 107 b As illustrated in, each one of the micro-LEDs() and() also includes the reflective structuresurrounding the first type conductive layer, the bottom connection structureformed under the first type conductive layer, the connecting padformed in the substrate, the isolation layersurrounding the first type conductive layerand under the light emitting layer, the substrateunder the first type conductive layerand electrically connected with the bottom connection structureby the connecting pad, and the microlensformed on the second type conductive layerand on the top surface ofthe top spacer.

103 107 108 6000 610 1000 620 1000 610 1000 620 1000 1000 6 FIG.A 1 FIG.A Except for the light emitting layer, the top spacer, and the bottom spacerthat are continuously formed on the whole micro-LED chipand are shared by the first and second micro-LEDs() and(), the components of the first and second micro-LEDs() and() of the sixth embodiment illustrated inare the same as the components of the micro-LED structureof the first embodiment illustrated in. Therefore, detailed descriptions of these components are not repeated.

6 FIG.B 6 FIG.B 6 FIG.A 1 FIG.B 6 FIG.B 6001 610 620 6001 1001 610 620 610 1001 620 1001 is a cross-sectional view of a micro-LED chip, according to a first variation of the sixth embodiment of the present disclosure. The first variation of the sixth embodiment illustrated indiffers from the sixth embodiment illustrated inin that each one of the micro-LEDsandin the micro-LED chipincludes the micro-LED structuredescribed in the first variation of the first embodiment illustrated in. Therefore, the micro-LEDsandinare also referred to as micro-LEDs() and().

6 FIG.B 6 FIG.B 6 FIG.A 101 101 1041 101 101 104 1041 6001 6000 b b a More specifically, as illustrated in, the sidewall surfaceof the first type conductive layeris curved, and the reflective structureformed on the sidewall surfaceof the first type conductive layerhas the curved surface. Except for the reflective structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

6 FIG.C 6 FIG.C 6 FIG.A 1 FIG.C 6 FIG.C 6002 610 620 6002 1002 610 620 610 1002 620 1002 is a cross-sectional view of a micro-LED chip, according to a second variation of the sixth embodiment of the present disclosure. The second variation of the sixth embodiment illustrated indiffers from the sixth embodiment illustrated inin that each one of the micro-LEDsandin the micro-LED chipincludes the micro-LED structuredescribed in the second variation of the first embodiment illustrated in. Therefore, the micro-LEDsandinare referred to as micro-LEDs() and().

6 FIG.C 6 FIG.C 6 FIG.A 1042 101 101 1042 105 1042 1042 1042 101 1 1042 6002 6000 c c More specifically, as illustrated in, the reflective structureis attached on the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the bottom of the reflective structure. The reflective structureon the bottom surfaceof the first type conductive layermay be made of metal. Except for the reflective structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

6 FIG.D 6 FIG.D 6 FIG.A 1 FIG.D 6 FIG.C 6003 610 620 6003 1003 610 620 610 1003 620 1003 is a cross-sectional view of a micro-LED chip, according to a third variation of the sixth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that each one of the micro-LEDsandin the micro-LED chipincludes the micro-LED structuredescribed in the third variation of the first embodiment illustrated in. Therefore, the micro-LEDsandinare referred to as micro-LEDs() and().

6 FIG.D 6 FIG.D 6 FIG.A 1043 101 101 101 1043 105 1043 1043 1043 6003 6000 b c More specifically, as illustrated in, the reflective structureis attached both on the sidewall surfaceand the bottom surfaceof the first type conductive layer. The reflective structureis electrically conductive. The bottom connection structureis formed at the bottom of the reflective structure, and is electrically connected with the reflective structure. Except for the reflective structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

6 FIG.E 6 FIG.E 6 FIG.A 2 FIG.A 6 FIG.E 6004 610 620 6004 2000 610 620 610 2000 620 2000 is a cross-sectional view of a micro-LED chip, according to a fourth variation of the sixth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that each one of the micro-LEDsandin the micro-LED chipincludes the micro-LED structuredescribed in the second embodiment illustrated in. Therefore, the micro-LEDsandinare referred to as micro-LEDs() and().

6 FIG.E 6 FIG.E 6 FIG.A 102 102 101 101 102 101 101 101 101 6004 6000 a a d a More specifically, as illustrated in, the bottom edgeof the second type conductive layeris not aligned with the top edgeof the first type conductive layer. Instead, a profile of the second type conductive layerperpendicularly projected on the top surfaceof the first type conductive layeris surrounded by the top edgeof the first type conductive layer. The components of the micro-LED chipof the embodiment illustrated inare the same as the components of the micro-LED chipof the embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

6 FIG.E 2 FIG.A 2 2 FIG.B,C 610 620 6004 2000 610 620 6004 2001 2002 2003 2 In the embodiment illustrated in, each of the micro-LEDsandin the micro-LED chipincludes the micro-LED structuredescribed in the second embodiment illustrated in. Alternatively, in other embodiments, each of the micro-LEDsandin the micro-LED chipmay include the micro-LED structure,, ordescribed in the first, second, or third variation of the second embodiment illustrated in, orD, respectively.

6 FIG.F 6 FIG.F 6 FIG.A 3 FIG.A 6 FIG.F 6005 610 620 6005 3000 610 620 610 3000 620 3000 is a cross-sectional view of a micro-LED chip, according to a fifth variation of the sixth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that each one of the micro-LEDsandin the micro-LED chipincludes the micro-LED structuredescribed in the second embodiment illustrated in. Therefore, the micro-LEDsandinare referred to as micro-LEDs() and().

6 FIG.F 6 FIG.A 102 102 101 101 101 102 102 102 102 6005 6 6000 a a b a More specifically, as illustrated in, the bottom edgeof the second type conductive layeris not aligned with the top edgeof the first type conductive layer. Instead, a profile of the first type conductive layerperpendicularly projected on the bottom surfaceof the second type conductive layeris surrounded by the bottom edgeof the second type conductive layer. The components of the micro-LED chipof the embodiment illustrated in FIG.F are the same as the components of micro-LED chipof the embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

6 FIG.F 3 FIG.A 3 3 FIG.B,C 610 620 6005 3000 610 620 6005 3001 3002 3003 3 In the embodiment illustrated in, each of the micro-LEDsandin the micro-LED chipincludes the micro-LED structuredescribed in the third embodiment illustrated in. Alternatively, in other embodiments, each of the micro-LEDsandin the micro-LED chipmay include the micro-LED structure,, ordescribed in the first, second, or third variation of the third embodiment illustrated in, orD, respectively.

7 FIG. 7000 7000 7000 1000 1001 3003 is a cross-sectional view of a micro-LED chip, according to a seventh embodiment of the present disclosure. The micro-LED chipmay include multiple micro-LEDs. At least one of the micro-LEDs included in the micro-LED chipmay have any one of the micro-LED structures,, . . .described above.

7000 6000 7000 112 610 1000 620 1000 112 112 112 610 1000 620 1000 7 FIG. 6 FIG.A 2 3 4 The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the micro-LED chipfurther includes an isolation structureformed between adjacent micro-LEDs() and(). The isolation structuremay be made of a light absorption material, which may be a dielectric material including, for example, impurity doped SiOor SiN. In other embodiments, the isolation structuremay be made of a reflective material such as, for example, metal. The isolation structureis configured to electrically isolate the adjacent micro-LEDs() and() from each other.

112 103 112 112 103 103 112 112 103 103 112 610 1000 620 1000 112 107 108 7 FIG. a b b c At least a portion of the isolation structureis formed in the light emitting layer. In the embodiment illustrated in, a top surfaceof the isolation structureis aligned with the top surfaceof the light emitting layer, and a bottom surfaceof the isolation structureis aligned with the bottom surfaceof the light emitting layer. The isolation structuremay be formed surrounding at least one of the micro-LEDs() and(). Additionally or alternatively, at least a portion of the isolation structuremay be formed in the top spaceror the bottom spacer.

7000 6000 7 FIG. 6 FIG.A Except for the isolation structure, the components of the micro-LED chipof the embodiment illustrated inare the same as the components of the micro-LED chipof the embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

8 FIG.A 8 FIG.A 7 FIG. 8 FIG.A 8 FIG.A 7 FIG. 8000 8000 7000 112 112 103 112 112 103 103 108 108 112 8000 7000 b b c b is a cross-sectional view of a micro-LED chip, according to an eighth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the bottom surfaceof the isolation structureis below the light emitting layer. More specifically, as illustrated in, the bottom surfaceof the isolation structureis below the bottom surfaceof the light emitting layerand above the bottom surfaceof the bottom spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

8 FIG.B 8 FIG.B 8 FIG.A 8 FIG.B 8 FIG.A 8001 8001 8000 112 112 108 108 112 8001 8000 b b is a cross-sectional view of a micro-LED chip, according to a first variation of the eighth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the bottom surfaceof the isolation structureis aligned with the bottom surfaceof the bottom spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

8 FIG.C 8 FIG.C 8 FIG.A 8 FIG.C 8 FIG.A 8002 8002 8000 112 112 108 108 109 112 8002 8000 b b is a cross-sectional view of a micro-LED chip, according to a second variation of the eighth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the bottom surfaceof the isolation structureis below the bottom surfaceof the bottom spacerand is disposed in the isolation layer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

8 8 FIGS.A-C 112 112 112 112 112 112 112 112 112 103 108 108 108 112 112 a b a b b b In the embodiments illustrated in, an area of the top surfaceof the isolation structureis equal to an area of the bottom surfaceof the isolation structure. Alternatively, in other embodiments, the area of the top surfaceof the isolation structuremay be larger or smaller than the area of the bottom surfaceof the isolation structure. Still alternatively, in some embodiments, a cross-sectional area of the isolation structureat an interface between the light emitting layerand the bottom spacer, or at the bottom surfaceof the bottom spacer, may be larger than the area of the bottom surfaceof the isolation structure.

9 FIG.A 9 FIG.A 7 FIG. 9 FIG.A 9 FIG.A 7 FIG. 9000 9000 7000 112 112 103 112 112 103 103 107 107 112 9000 7000 a a b b is a cross-sectional view of a micro-LED chip, according to a ninth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the top surfaceof the isolation structureis above the light emitting layer. More specifically, as illustrated in, the top surfaceof the isolation structureis above the top surfaceof the light emitting layerand below the top surfaceof the top spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

9 FIG.B 9 FIG.B 9 FIG.A 9 FIG.B 9 FIG.A 9001 9001 9000 112 112 107 107 112 9001 9000 a b is a cross-sectional view of a micro-LED chip, according to a first variation of the ninth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the top surfaceof the isolation structureis aligned with the top surfaceof the top spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

9 FIG.C 9 FIG.C 9 FIG.A 9 FIG.C 9 FIG.A 9002 9002 9000 112 112 107 107 102 112 9002 9000 a b is a cross-sectional view of a micro-LED chip, according to a second variation of the ninth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the top surfaceof the isolation structureis above the top surfaceof the top spacerand between adjacent second type conductive layers. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

9 9 FIGS.A-C 112 112 112 112 112 112 112 112 112 103 103 107 107 112 112 a b a b b b b In the embodiment illustrated in, the area of the top surfaceof the isolation structureis equal to the area of the bottom surfaceof the isolation structure. Alternatively, in other embodiments, the area of the top surfaceof the isolation structuremay be larger or smaller than the area of the bottom surfaceof the isolation structure. Still alternatively, in some embodiments, a cross-sectional area of the isolation structureat the top surfaceof the light emitting layeror at the top surfaceof the top spacermay be larger than the area of the bottom surfaceof the isolation structure.

10 FIG.A 10 FIG.A 7 FIG. 10 FIG.A 10 FIG.A 7 FIG. 10000 10000 7000 112 112 103 112 112 103 112 112 103 103 107 107 112 112 103 103 108 108 112 10000 7000 a b a b b b c b is a cross-sectional view of a micro-LED chip, according to a tenth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the top surfaceof the isolation structureis above the light emitting layer, and the bottom surfaceof the isolation structureis below the light emitting layer. More specifically, as illustrated in, the top surfaceof the isolation structureis above the top surfaceof the light emitting layerand below the top surfaceof the top spacer, and the bottom surfaceof the isolation structureis below the bottom surfaceof the light emitting layerand above the bottom surfaceof the bottom spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

10 FIG.B 10 FIG.B 10 FIG.A 10 FIG.B 10 FIG.A 10001 10001 10000 112 112 108 108 112 10001 10000 b b is a cross-sectional view of a micro-LED chip, according to a first variation of the tenth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the bottom surfaceof the isolation structureis aligned with the bottom surfaceof the bottom spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

10 FIG.C 10 FIG.C 10 FIG.A 10 FIG.C 10 FIG.A 10002 10002 10000 112 112 108 108 109 112 10002 10000 b b is a cross-sectional view of a micro-LED chip, according to a second variation of the tenth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the bottom surfaceof the isolation structureis below the bottom surfaceof the bottom spacerand is disposed in the isolation layer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

10 10 FIGS.A-C 112 112 112 112 112 112 112 112 112 103 103 108 108 112 112 a b a b c b b In the embodiment illustrated in, the area of the top surfaceof the isolation structureis equal to the area of the bottom surfaceof the isolation structure. Alternatively, in other embodiments, the area of the top surfaceof the isolation structuremay be larger or smaller than the area of the bottom surfaceof the isolation structure. Still alternatively, in some embodiments, a cross-sectional area of the isolation structureat the bottom surfaceof the light emitting layeror at the bottom surfaceof the bottom spacermay be larger than the area of the bottom surfaceof the isolation structure.

11 FIG.A 11 FIG.A 7 FIG. 11 FIG.A 11 FIG.A 7 FIG. 11000 11000 7000 112 112 107 107 112 112 103 112 112 103 103 108 108 112 11000 7000 a b b b c b is a cross-sectional view of a micro-LED chip, according to an eleventh embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the top surfaceof the isolation structureis aligned with the top surfaceof the top spacer, and the bottom surfaceof the isolation structureis below the light emitting layer. More specifically, in the embodiment illustrated in, the bottom surfaceof the isolation structureis below the bottom surfaceof the light emitting layerand above the bottom surfaceof the bottom spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

11 FIG.B 11 FIG.B 11 FIG.A 11 FIG.A 11 FIG.A 11001 11001 11000 112 112 108 108 112 11001 11000 b b is a cross-sectional view of a micro-LED chip, according to a first variation of the eleventh embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the bottom surfaceof the isolation structureis aligned with the bottom surfaceof the bottom spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

11 FIG.C 11 FIG.C 11 FIG.A 11 FIG.C 11 FIG.A 11002 11002 11000 112 112 108 108 109 112 11002 11000 b b is a cross-sectional view of a micro-LED chip, according to a second variation of the eleventh embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the bottom surfaceof the isolation structureis below the bottom surfaceof the bottom spacerand is disposed in the isolation layer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

11 11 FIGS.A-C 112 112 112 112 112 112 112 112 112 103 103 108 108 112 112 a b a b c b b In the embodiment illustrated in, the area of the top surfaceof the isolation structureis equal to the area of the bottom surfaceof the isolation structure. Alternatively, in other embodiments, the area of the top surfaceof the isolation structuremay be larger or smaller than the area of the bottom surfaceof the isolation structure. Still alternatively, in some embodiments, a cross-sectional area of the isolation structureat the bottom surfaceof the light emitting layeror the bottom surfaceof the bottom spacermay be larger than the area of the bottom surfaceof the isolation structure.

11 FIG.D 11 FIG.D 11 FIG.B 11 FIG.D 11 FIG.B 11003 11003 11001 112 112 112 112 112 11003 11001 a b is a cross-sectional view of a micro-LED chip, according to a third variation of the eleventh embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the area of the top surfaceof the isolation structureis larger than an area of the bottom surfaceof the isolation structure. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

12 FIG.A 12 FIG.A 7 FIG. 12 FIG.A 12 FIG.A 7 FIG. 12000 12000 7000 112 112 107 107 102 112 112 103 112 112 103 103 108 108 112 12000 7000 a b b b c b is a cross-sectional view of a micro-LED chip, according to a twelfth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the top surfaceof the isolation structureis above the top surfaceof the top spacerand between adjacent second type conductive layers, and the bottom surfaceof the isolation structureis below the light emitting layer. More specifically, in the embodiment illustrated in, the bottom surfaceof the isolation structureis below the bottom surfaceof the light emitting layerand above the bottom surfaceof the bottom spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

12 FIG.B 12 FIG.B 12 FIG.A 12 FIG.B 12 FIG.A 12001 12001 12000 112 112 108 108 112 12001 12000 b b is a cross-sectional view of a micro-LED chip, according to a first variation of the twelfth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the bottom surfaceof the isolation structureis aligned with the bottom surfaceof the bottom spacer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

12 FIG.C 12 FIG.C 12 FIG.A 12 FIG.C 12 FIG.A 12002 12002 12000 112 112 108 108 109 112 12002 12000 b b is a cross-sectional view of a micro-LED chip, according to a second variation of the twelfth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the bottom surfaceof the isolation structureis below the bottom surfaceof the bottom spacerand disposed in the isolation layer. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

12 FIG.D 12 FIG.D 12 FIG.C 12 FIG.D 12 FIG.C 12003 12003 12002 112 112 112 112 112 112 103 103 112 112 112 12003 12002 a b c c b is a cross-sectional view of a micro-LED chip, according to a third variation of the twelfth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the area of the top surfaceof the isolation structureis smaller than the area of the bottom surfaceof the isolation structure, and a cross-sectional areaof the isolation structureat the bottom surfaceof the light emitting layeris larger than the area of the bottom surfaceof the isolation structure. Except for the isolation structure, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

13 FIG.A 13000 13000 13000 1000 1001 3003 is a cross-sectional view of a micro-LED chip, according to a thirteenth embodiment of the present disclosure. The micro-LED chipmay include multiple micro-LEDs. At least one of the micro-LEDs included in the micro-LED chipmay have any one of the micro-LED structures,, . . .described above.

13000 6000 13000 113 103 610 1000 620 1000 113 103 103 101 102 107 103 113 107 107 13 FIG.A 6 FIG.A 13 FIG.A b b The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the micro-LED chipfurther includes a metal layerformed over the light emitting layerbetween adjacent micro-LEDs() and(). The metal layeris formed over the top surfaceof the light emitting layerand does not contact the first type conductive layeror the second type conductive layer. More specifically, in the embodiment illustrated in, the top spaceris formed on top of the light emitting layer, and the metal layeris formed on the top surfaceof the top spacer.

1 113 2 103 103 101 101 1 113 3 103 103 102 102 1 113 a a a a A lateral dimensional value dof the metal layeris not more than a distance dbetween the edgeof the light emitting layerand the top edgeof the first type conductive layer, or the lateral dimensional value dof the metal layeris not more than a distance dbetween the edgeof the light emitting layerand the bottom edgeof the second type conductive layer. The lateral dimensional value dof the metal layermay be from approximately 2 nm to approximately 10 um.

113 610 1000 620 1000 113 610 1000 620 1000 610 1000 620 1000 In some embodiments, a center point of the metal layermay be aligned with a center point between the adjacent micro-LEDs() and(). Alternatively, in some embodiments, the center point of the metal layeris closer to one of the adjacent micro-LEDs() and() than the other one of the micro-LEDs() and().

113 103 The metal layermay include a high work function metal material having a work function that matches the work function of a material of the light emitting layer. The high work function metal material may include at least one of gold, platinum, palladium, beryllium, cobalt, nickel, or tungsten.

13 FIG.B 13 FIG.B 13 FIG.A 13001 13001 13000 13001 113 107 107 610 1000 620 1000 113 103 103 b b is a cross-sectional view of a micro-LED chip, according to a variation of the thirteenth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the micro-LED chipincludes multiple metal layersformed on the top surfaceof the top spacerand between adjacent micro-LEDs() and(). The metal layersare arranged in parallel along the top surfaceof the light emitting layer.

13 FIG.B 113 113 In the embodiment illustrated in, there are three (3) metal layers. In other embodiments, the number of the metal layersmay be more than three.

13 13 FIGS.A andB 1 FIG.A 1 1 1 FIGS.B,C, andD 610 620 1000 610 620 1001 1002 1003 In the embodiments illustrated in, each of the micro-LEDsandincludes the micro-LED structuredescribed in the first embodiment illustrated in. Alternatively, in other embodiments, each of the micro-LEDsandmay include any one of the micro-LED structures,, anddescribed in the first, second, and third variations of the first embodiment illustrated in, respectively.

14 FIG.A 14 FIG.A 13 FIG.A 2 FIG.A 14 FIG.A 13 FIG.A 14000 14000 610 2000 620 2000 610 2000 620 2000 2000 14000 13000 is a cross-sectional view of a micro-LED chip, according to a fourteenth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that micro-LED chipincludes two micro-LEDs() and(), and each one of the micro-LEDs() and() includes the micro-LED structuredescribed in the second embodiment illustrated in. The other components of the micro-LED chipof the embodiment illustrated inare the same as the components of the micro-LED chipof the embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

14 FIG.B 14 FIG.B 14 FIG.A 14 FIG.B 13 FIG.A 14001 14001 14000 14001 113 107 107 610 2000 620 2000 14001 13000 b is a cross-sectional view of a micro-LED chip, according to a variation of the fourteenth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the micro-LED chipincludes multiple metal layersformed on the top surfaceof the top spacerand between adjacent micro-LEDs() and(). The other components of the micro-LED chipof the embodiment illustrated inare the same as the components of the micro-LED chipof the embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

14 14 FIGS.A andB 2 FIG.A 2 2 2 FIGS.B,C, andD 610 620 2000 610 620 2001 2002 2003 In the embodiments illustrated in, each of the micro-LEDsandincludes the micro-LED structuredescribed in the second embodiment illustrated in. Alternatively, in other embodiments, each of the micro-LEDsandmay include any one of the micro-LED structures,, anddescribed in the first, second, and third variations of the second embodiment illustrated in, respectively.

15 FIG.A 15 FIG.A 13 FIG.A 3 FIG.A 15 FIG.A 13 FIG.A 15000 15000 610 3000 620 3000 610 3000 620 3000 3000 15000 13000 is a cross-sectional view of a micro-LED chip, according to a fifteenth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that micro-LED chipincludes two micro-LEDs() and(), and each one of the micro-LEDs() and() includes the micro-LED structuredescribed in the second embodiment illustrated in. The other components of the micro-LED chipof the embodiment illustrated inare the same as the components of the micro-LED chipof the embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

15 FIG.B 15 FIG.B 15 FIG.A 15 FIG.B 13 FIG.A 15001 15001 15000 15001 113 107 107 610 3000 620 3000 15001 13000 b is a cross-sectional view of a micro-LED chip, according to a variation of the fifteenth embodiment of the present disclosure. The micro-LED chipillustrated indiffers from the micro-LED chipillustrated inin that the micro-LED chipincludes multiple metal layersformed on the top surfaceof the top spacerand between adjacent micro-LEDs() and(). The components of the micro-LED chipof the embodiment illustrated inare the same as the components of the micro-LED chipof the embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

15 15 FIGS.A andB 3 FIG.A 3 3 3 FIGS.B,C, andD 610 620 3000 610 620 3001 3002 3003 In the embodiments illustrated in, each of the micro-LEDsandincludes the micro-LED structuredescribed in the third embodiment illustrated in. Alternatively, in other embodiments, each of the micro-LEDsandmay include any one of the micro-LED structures,, anddescribed in the first, second, and third variations of the third embodiment illustrated in, respectively.

16 FIG.A 16000 16000 16000 4000 4001 5003 is a cross-sectional view of a micro-LED chip, according to a sixteenth embodiment of the present disclosure. The micro-LED chipmay include multiple micro-LEDs. At least one of the micro-LEDs included in the micro-LED chipmay have any one of the micro-LED structures,, . . .described above.

16 FIG.A 4 FIG.A 16000 610 4000 620 4000 610 4000 620 4000 4000 In the embodiment illustrated in, the micro-LED chipincludes two micro-LEDs() and(). Each one of the micro-LEDs() and() includes the micro-LED structuredescribed in the fourth embodiment illustrated in.

16 FIG.A 610 4000 620 4000 101 102 101 103 101 102 101 102 102 102 102 103 101 101 103 103 102 102 b a a a a As illustrated in, each one of the micro-LEDs() and() includes the first type conductive layer, the second type conductive layerstacked on the first type conductive layer, and the light emitting layerformed between the first type conductive layerand the second type conductive layer. The profile of the first type conductive layerperpendicularly projected on the bottom surfaceof the second type conductive layeris surrounded by the bottom edgeof the second type conductive layer. The light emitting layerextends along a horizontal level away from the top edgeof the first type conductive layerand the edgeof the light emitting layeris aligned with the bottom edgeof the second type conductive layer.

610 4000 620 4000 107 103 103 107 107 108 108 103 103 102 102 a a a a Each one of the micro-LEDs() and() further includes the top spacerformed on the light emitting layerand the bottom spacer formed under the light emitting layer. Both of the edgeof the top spacerand the edgeof the bottom spacerare aligned with the edgeof the light emitting layer, which is aligned with the bottom edgeof the second type conductive layer.

16000 114 103 111 102 114 114 a The micro-LED chipfurther includes the top isolation layersurrounding the light emitting layer, and the microlensformed on the second type conductive layerand on a top surfaceof the isolation layer.

103 103 107 107 108 108 102 102 16000 6005 a a a a 16 FIG.A 6 FIG.F Except that the edgeof the light emitting layer, the edgeof the top spacer, and the edgeof the bottom spacerare aligned with the bottom edgeof the second type conductive layer, the components of the micro-LED chipillustrated inare the same as the components of micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

16 FIG.B 16 FIG.B 16 FIG.A 16 FIG.B 16 FIG.B 16 FIG.A 16001 16001 113 114 114 610 4000 620 4000 113 610 4000 620 4000 113 610 4000 620 4000 113 610 4000 620 4000 113 16001 16000 a is a cross-sectional view of a micro-LED chip, according to a variation of the sixteenth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that the micro-LED chipfurther includes the metal layerformed on the top surfaceof the isolation layerand between adjacent micro-LEDs() and(). In the embodiment illustrated in, there is only one metal layerbetween micro-LEDs() and(). Alternatively, in other embodiments, there are multiple metal layersbetween micro-LEDs() and(), and the number of the multiple metal layersbetween micro-LEDs() and() may be more than two. Except for the metal layer, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

16 16 FIGS.A andB 4 FIG.A 4 4 4 FIGS.B,C, andD 610 620 4000 610 620 4001 4002 4003 In the embodiments illustrated in, each of the micro-LEDsandincludes the micro-LED structuredescribed in the fourth embodiment illustrated in. Alternatively, in other embodiments, each of the micro-LEDsandmay include any one of the micro-LED structures,, anddescribed in the first, second, and third variations of the fourth embodiment illustrated in, respectively.

17 FIG.A 5 FIG.A 17000 17000 610 5000 620 5000 610 5000 620 5000 5000 is a cross-sectional view of a micro-LED chip, according to a seventeenth embodiment of the present disclosure. The micro-LED chipincludes two micro-LEDs() and(). Each one of the micro-LEDs() and() includes the micro-LED structuredescribed in the fifth embodiment illustrated in.

17000 16000 102 101 101 101 101 103 103 107 107 108 108 101 101 d a a a a a The micro-LED chipdiffers from the micro-LED chipin that a profile of the second type conductive layerperpendicularly projected on the top surfaceof the first type conductive layeris surrounded by the top edgeof the first type conductive layer. In addition, the edgeof the light emitting layer, the edgeof the top spacer, and the edgeof the bottom spacerare aligned with the top edgeof the first type conductive layer.

17000 114 103 111 102 114 114 17000 16000 a 17 FIG.A 16 FIG.A In addition, the micro-LED chipfurther includes the top isolation layersurrounding the light emitting layer. The microlensis formed on the second type conductive layerand on the top surfaceof the isolation layer. The other components of the micro-LED chipof the fourth embodiment illustrated inare the same as the components of the micro-LED chipof the second embodiment illustrated in, and therefore detailed descriptions of these components are not repeated.

17 FIG.B 17 FIG.B 17 FIG.A 17 FIG.B 17 FIG.B 17 FIG.A 17001 17001 113 114 114 610 5000 620 5000 113 610 5000 620 5000 113 610 5000 620 5000 113 610 4000 620 4000 113 17001 17000 a is a cross-sectional view of a micro-LED chip, according to a variation of the seventeenth embodiment of the present disclosure. The embodiment illustrated indiffers from the embodiment illustrated inin that that the micro-LED chipfurther includes the metal layerformed on the top surfaceof the isolation layerand between adjacent micro-LEDs() and(). In the embodiment illustrated in, there is only one metal layerbetween micro-LEDs() and(). Alternatively, in other embodiments, there are multiple metal layersbetween micro-LEDs() and(), and the number of the multiple metal layersbetween micro-LEDs() and() may be more than two. Except for the metal layer, the components of the micro-LED chipillustrated inare the same as the components of the micro-LED chipillustrated in, and therefore detailed descriptions of these components are not repeated.

17 17 FIGS.A andB 5 FIG.A 5 5 5 FIGS.B,C, andD 610 620 5000 610 620 5001 5002 5003 In the embodiments illustrated in, each of the micro-LEDsandincludes the micro-LED structuredescribed in the fifth embodiment illustrated in. Alternatively, in other embodiments, each of the micro-LEDsandmay include any one of the micro-LED structures,, anddescribed in the first, second, and third variations of the fifth embodiment illustrated in, respectively.

18 FIG. 18 FIG. 1 FIG.A 1 1 1000 103 101 101 102 102 103 103 101 101 102 102 a a a a a is a cross-sectional view of a micro-LED structure, according to a comparative example. The micro-LED structurein the comparative example illustrated indiffers from the micro-LED structureof the first embodiment illustrated inin that the light emitting layerdoes not extend along the horizontal level away from the top edgeof the first type conductive layerand the bottom edgeof the second type conductive layer. Instead, in the comparative example, the edgeof the light emitting layeris aligned with both of the top edgeof the first type conductive layerand the bottom edgeof the second type conductive layer.

103 103 103 As explained previously, the light emitting layermay include multiple pairs of quantum well layers. The number of multi-quantum well (MQW) pairs in the light emitting layeris related to exposed sidewall area of the light emitting layerwhich is generated by, for example, inductively coupled plasma etching. The larger the exposed sidewall area, the more MQW pairs, resulting in larger surface recombination carrier loss.

103 101 102 101 102 101 102 a a In the comparative example, the sidewall of the light emitting layeris aligned with the edgesandof the first type conductive layerand the second type conductive layer. As a result, large surface recombination carrier loss may occur in the micro-LED between the first type conductive layerand the second type conductive layer, negatively impacting the light emission efficiency of the micro-LED.

103 101 101 102 102 103 103 101 101 102 102 101 102 a a a a a In contrast, in the first embodiment as well as other embodiments of the present disclosure, the light emitting layerextends away from the top edgeof the first type conductive layerand the bottom edgeof the second type conductive layer, such that the edgeof the light emitting layerdoes not contact the top edgeof the first type conductive layerand the bottom edgeof the second type conductive layer. As a result, surface recombination carrier loss may not occur in the micro-LED between the first type conductive layerand the second type conductive layer. Consequently, light emission efficiency of the micro-LED will be improved.

While illustrative embodiments have been described herein, the scope of the present disclosure covers any and all embodiments having equivalent elements, modifications, omissions, combinations (e.g., of aspects across various embodiments), adaptations and/or alterations as would be appreciated by those skilled in the art based on the present disclosure. For example, features included in different embodiments shown in different figures may be combined. The limitations in the claims are to be interpreted broadly based on the language employed in the claims and not limited to examples described in the present specification or during the prosecution of the application. The examples are to be construed as non-exclusive. It is intended, therefore, that the specification and examples be considered as illustrative only, with a true scope and spirit being indicated by the following claims and their full scope of equivalents.