Light emitting display device and manufacturing method thereof

This application claims priority to and the benefit of Korean Patent Application No. 10-2021-0084535 filed in the Korean Intellectual Property Office on Jun. 29, 2021, the entire contents of which are incorporated herein by reference.

The present disclosure relates to a light emitting display device and a manufacturing method thereof, and in detail, to a structure of a color filter positioned at an upper part of a light emitting display device and a manufacturing method thereof.

A display device is a device that displays images, and may be a liquid crystal display (LCD), an organic light emitting diode (OLED) display, and the like. The display device is used in various electronic devices such as a mobile phone, a navigation device, a digital camera, an electronic book, a portable game machine, and various terminals.

A display device such as the organic light emitting display device may have a structure in which the display device can be bent or folded by using a flexible substrate. The organic light emitting display device has drawbacks such as a more complex pixel structure than the liquid crystal display, a large number of layers formed on the top, a large number of masks used, and a complicated manufacturing process.

The above information disclosed in this Background section is only for enhancement of understanding of the background of the described technology, and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.

Embodiments are to provide a light emitting display device capable of forming a color filter by reducing the number of masks and a manufacturing method thereof.

A light emitting display device according to an embodiment includes: a substrate; a pixel circuit unit positioned on the substrate; a light emitting diode (LED) electrically connected to the pixel circuit unit; an encapsulation layer covering the pixel circuit unit and the light emitting diode (LED); a light blocking layer disposed on the encapsulation layer and having a first opening, a second opening, and a third opening; a first color filter including a main part in the first opening and an overlapping part connecting adjacent main parts and covering the light blocking layer; a second color filter in the second opening; and a third color filter in the third opening.

The overlapping part may cover the light blocking layer.

The first color filter may have a color filter opening aligned with the second opening and the third opening.

The color filter opening of the first color filter may align with the second opening and the third opening of the light blocking layer, and the second opening and the third opening may be smaller than the color filter opening of the first color filter in plan view.

The light emitting diode (LED) may include an anode, an emission layer, and a cathode, and a black pixel defining layer including a light blocking material that is covering the edge of the anode and having an opening aligned with the anode.

The opening of the black pixel defining layer is aligned with the first opening, the second opening, and the third opening of the light blocking layer, and the opening of the black pixel defining layer may be smaller than the first opening, the second opening, and the third opening in plan view.

The second color filter, the third color filter, the first opening, the second opening, and the third opening of the light blocking layer, the color filter opening of the first color filter, and the opening of the black pixel defining layer may have the same shape in plan view, or a chamfered version of the same shape.

A detecting aligned with the light blocking layer and the overlapping part may be included.

The light emitting display device may further include a photosensor area through which light can pass, and an additional opening formed in the first color filter, the light blocking layer, and the black pixel defining layer in the photosensor area.

The additional opening of the first color filter positioned in the photosensor area may be integrally formed with the adjacent color filter opening.

Three color filter openings positioned adjacent to the photosensor area and two additional openings of the first color filter may be integrally formed.

The additional opening of the light blocking layer may be aligned with and smaller than the additional opening of the first color filter in plan view, and the additional opening of the black pixel defining layer may be aligned with and smaller than the additional opening of the light blocking layer in plan view.

A detecting electrode aligned with the light blocking layer and the overlapping part may be further included in the light emitting display device.

The light emitting display device may include a component area positioned at the periphery of the photosensor area and having a light transmitting area.

There may be a plurality of photosensor areas.

A spacer positioned on the black pixel defining layer and having a step may be further included.

The second color filter and the third color filter may be formed by an inkjet method.

A manufacturing method of a light emitting display device according to an embodiment includes: forming a light blocking layer including a first opening, a second opening, and a third opening on an encapsulation layer; forming a first color filter having a color filter opening at each portion aligned with the second opening and the third opening by using a mask after disposing an organic material for the first color filter on the encapsulation layer; completing a second color filter by forming an organic material for the second color filter in the second opening on a plane by an inkjet method; and completing a third color filter by forming an organic material for the third color filter in the third opening by an inkjet method.

The second color filter and the third color filter may be formed after the first color filter.

The second color filter and the third color filter may be formed before the first color filter.

According to embodiments, only the color filter of one color is formed using a mask, and the remaining two color filters are formed in the openings formed in the color filter or the light blocking layer by the inkjet method, thereby reducing the number of masks used.

The inventive concept will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the disclosure are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Descriptions of parts not related to the present disclosure are omitted, and like reference numerals designate like elements throughout the specification.

Further, since sizes and thicknesses of constituent members shown in the accompanying drawings are chosen for better understanding and ease of description rather than accuracy of scale, the present invention is not limited to the illustrated sizes and thicknesses. In the drawings, the thicknesses of layers, films, panels, areas, etc., are exaggerated for clarity. In the drawings, for better understanding and ease of description, the thicknesses of some layers and areas are exaggerated.

It will be understood that when an element such as a layer, film, area, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present. Further, in the specification, the word “on” or “above” means positioned on or below the object portion, and does not necessarily mean positioned on the upper side of the object portion based on a gravitational direction.

In addition, unless explicitly described to the contrary, the word “comprise”, and variations such as “comprises” or “comprising”, will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

Further, in the specification, the phrase “on a plane” means when an object portion is viewed from above in plan view, and the phrase “on a cross-section” means an object portion is cut and the surface that is revealed by the cutting is viewed.

3 As used herein, when one part is “aligned with” another part, one part is on top of the other such that a straight line in the direction DR(defined below) intersects both parts. When a first part is “smaller than” a second part, the boundaries of the first part enclose an area that is smaller than the boundaries of the second part in plan view.

1 FIG. 3 FIG. Hereinafter, a schematic structure of a light emitting display device is described with reference toto.

1 FIG. 2 FIG. 3 FIG. is a schematic perspective view showing a use state of a display device according to an embodiment,is an exploded perspective view of a display device according to an embodiment, andis a block diagram of a display device according to an embodiment.

1000 1000 1000 1000 1 FIG. A light emitting display deviceaccording to an embodiment may display a moving image or a static image, and may be used as a display screen of various products such as a television, a laptop, a monitor, a billboard, an Internet of things (IOT), as well as a portable electronic device such as a mobile phone, a smart phone, a tablet personal computer, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, an ultra-mobile PC (UMPC), etc. Also, the light emitting display deviceaccording to an embodiment may be used in wearable devices such as a smart watch, a watch phone, a spectacle display, a head mounted display (HMD), etc. Also, the light emitting display deviceaccording to an embodiment may be used as an instrument panel of a vehicle, a center fascia of a vehicle or a center information display (CID) disposed on a dashboard, a room mirror display instead of a side mirror of a vehicle, an entertainment unit for a back seat of a vehicle, or a display disposed at a rear surface of a front seat.shows the light emitting display deviceaccording to an embodiment used as a smartphone for convenience of explanation.

1 FIG. 2 FIG. 3 FIG. 1000 3 1 2 1000 Referring to,, and, the light emitting display devicemay display the image toward a third direction DRon a display surface that is perpendicular to a first direction DRand a second direction DR. The display surface on which the image is displayed may correspond to the front surface of the light emitting display deviceand may correspond to the front surface of the cover window WU. The images may include static images as well as dynamic moving images.

3 3 3 3 In the present embodiment, the front (or a top) and the back (or a bottom) of each member are defined based on the direction in which the image is displayed. The front and rear surfaces may be opposed to each other in the third direction DR, and the normal directions of the front and rear surfaces may be parallel to the third direction DR. The separation distance in the third direction DRbetween the front and rear surfaces may correspond to the thickness in the third direction DRof the light emitting display panel DP.

1000 1000 1000 1000 1 FIG. The light emitting display deviceaccording to an embodiment may detect the user's input (refer to a hand in) applied from the outside. The user's input may include various types of external inputs such as a part of the user's body, light, heat, or pressure. In an embodiment, the user's input is shown with the user's hand applied to the front. However, the present invention is not limited thereto. The user's input may be provided in various forms, and the light emitting display devicemay sense the user's input applied to the side or rear of the light emitting display deviceaccording to the structure of the light emitting display device.

1000 1 2 1 2 2 2 1000 2 1 FIG. The light emitting display devicemay include a display area DA and non-display area PA disposed around the display area DA. Meanwhile, the display area DA may be largely divided into a first display area DAand a first element area DA(hereinafter also referred to as a component area or a second display area), and in an embodiment, the first display area DAmay include a plurality of pixels for displaying an image, and the first element area DAmay include a light transmitting area, and may additionally also include a pixel that displays the image. The first element area DAmay be an area overlapping at least partially with an optical element ES such as a camera or an optical sensor.shows that the first element area DAis provided in a circle shape on the upper right side of the light emitting display device, but the present invention is not limited thereto. The first element area DAmay be provided in various numbers and shapes according to the number and shape of the optical element ES.

1000 2 2 The light emitting display devicemay receive an external signal required for the optical element ES through the first element area DA, or may externally provide a signal output from the optical element ES. In an embodiment, since the first element area DAis provided to overlap the light transmitting area, the area of the blocking area BA for forming the light transmitting area may be reduced. Here, the blocking area BA is a region having relatively low light transmittance, and may include a bezel area.

1000 1000 The light emitting display devicemay include a cover window WU, a housing HM, a light emitting display panel DP, and an optical element ES. In an embodiment, the cover window WU and the housing HM may be combined to constitute the appearance of the light emitting display device.

The cover window WU may include an insulating panel. For example, the cover window WU may be made of glass, plastic, or a combination thereof.

1000 The front surface of the cover window WU may define the front surface of the light emitting display device. The transmitting area TA may be an optically transparent area. For example, the transmitting area TA may be an area having visible ray transmittance of about 90% or more.

The blocking area BA may define the shape of the transmitting area TA. The blocking area BA may be adjacent to the transmitting area TA and may surround the transmitting area TA. The blocking area BA may be an area having relatively low light transmittance compared to the transmitting area TA. The blocking area BA may include an opaque material that blocks light. The blocking area BA may have a predetermined color. The blocking area BA may be defined by a transparent substrate defining the transmitting area TA and a bezel layer provided separately, or by an ink layer formed by being inserted or colored into the transparent substrate.

50 The light emitting display panel DP may include a display panel DP for displaying the image, a touch sensor TS for detecting an external input, and a driving unit. The light emitting display panel DP may include a front surface including a display area DA and a non-display area PA. The display area DA may be an area in which a pixel operates and emits light according to an electrical signal.

3 In an embodiment, the display area DA is an area where the image is displayed by including a pixel, and simultaneously may be an area where the touch sensor TS is positioned on the upper side in the third direction DRof the pixel and an external input is sensed.

The transmitting area TA of the cover window WU may overlap at least partially with the display area DA of the light emitting display panel DP. For example, the transmitting area TA may overlap the entire surface of the display area DA or may overlap at least a part of the display area DA. Accordingly, the user may view the image through the transmitting area TA or provide an external input based on the image. However, the present invention is not limited thereto. For example, in the display area DA, the area in which the image is displayed and the area in which the external input is detected may be separated from each other.

1 2 50 1 2 2 FIG. The non-display area PA of the light emitting display panel DP may at least partially overlap with the blocking area BA of the cover window WU. The non-display area PA may be an area covered by the blocking area BA. The non-display area PA is adjacent to the display area DA and may surround the display area DA. The image is not displayed in the non-display area PA, and a driving circuit or driving wiring for driving the display area DA may be disposed there. The non-display area PA may include a first peripheral area PApositioned outside the display area DA and a second peripheral area PAincluding a driving unit, connection wiring, and a bending area. In the embodiment of, the first peripheral area PAis positioned on three sides of the display area DA, and the second peripheral area PAis positioned on the other side of the display area DA.

1000 1000 2 2 FIG. In an embodiment, the light emitting display panel DP may be assembled in a flat state such that the display area DA and the non-display area PA face the cover window WU. However, the present disclosure is not limited thereto. A part of the non-display area PA of the light emitting display panel DP may be bent. In this case, a portion of the non-display area PA faces the rear surface of the light emitting display device, so that the blocking area BA shown on the front surface of the light emitting display devicemay be reduced, and as shown in, the second peripheral area PAis bent to be positioned on the back surface of the display area DA and then assembled.

1 2 2 1 2 1 2 2 2 The display area DA may include a first display area DAand a first element area DA. The first element area DAmay have relatively high light transmittance compared to the first display area DAby including the light transmitting area. Also, the first element area DAmay have a relatively smaller area than the first display area DA. The first element area DAmay be defined as an area overlapping the area where the optical element ES is disposed inside the housing HM among the light emitting display panel DP. In an embodiment, the first element area DAis shown with a circle shape, but the present invention is not limited thereto, and the first element area DAmay have various shapes such as polygons, ellipses, and figures with at least one curved line.

1 2 1 2 1 2 The first display area DAmay be adjacent to the first element area DA. In an embodiment, the first display area DAmay surround the entirety of the first element area DA. However, this is not a limitation of the disclosure. The first display area DAmay partially surround the first element area DA.

3 FIG. Referring to, the light emitting display panel DP may include a display area DA including a display pixel and a touch sensor TS. The light emitting display panel DP may be visually recognized by the user from the outside through the transmitting area TA, including the pixel that generates the image. In addition, the touch sensor TS may be positioned on the upper part of the pixel, and may sense the external input applied from the outside. The touch sensor TS may detect an external input provided to the cover window WU.

2 FIG. 2 1 1 2 2 2 2 1000 2 Again referring to, the second peripheral area PAmay include a bent part. The display area DA and the first peripheral area PAmay have a flat state while being substantially parallel to the plane defined by the first direction DRand the second direction DR, and one side of the second peripheral area PAis extended from the flat state and may again have the flat state after passing the bending part. As a result, at least a part of the second peripheral area PAmay be bent and assembled to be positioned on the back side of the display area DA. At least part of the second peripheral area PAoverlaps the display area DA on a plane when being assembled, so that the blocking area BA of the light emitting display devicemay be reduced. However, this is not a limitation of the disclosure. For example, the second peripheral area PAmay not be bent.

50 2 50 The driving unitmay be mounted on the second peripheral area PA, mounted on the bending part, or positioned on one of both sides of the bending part. The driving unitmay be provided in a form of a chip.

50 50 50 50 The driving unitmay be electrically connected to the display area DA to transmit an electrical signal to the display area DA. For example, the driving unitmay provide data signals to the pixels PX disposed in the display area DA. Alternatively, the driving unitmay include a touch driving circuit and may be electrically connected to the touch sensor TS disposed in the display area DA. Meanwhile, the driving unitmay include various circuits in addition to the above-described circuits or may be designed to provide various electrical signals to the display area DA.

2 1000 1000 On the other hand, a pad part may be positioned on the end of the second peripheral area PA, and the light emitting display devicemay be electrically connected to a flexible printed circuit board (FPCB) including the driving chip by the pad part. Here, the driving chip positioned on the flexible printed circuit board may include various driving circuits for driving the light emitting display deviceor connectors for power supply. According to an embodiment, instead of the flexible printed circuit board, a rigid printed circuit board (PCB) may be used.

2 2 2 The optical element ES may be disposed under the light emitting display panel DP. The optical element ES may receive an external input transmitted through the first element area DAor may output a signal through the first element area DA. In an embodiment, the first element area DAhaving relatively high transmittance is provided inside the display area DA, so that the optical element ES may be disposed to overlap the display area DA, and accordingly, the area (or the size) of the blocking area BA may be reduced.

3 FIG. 3 FIG. 3 FIG. 1000 1 2 1 2 Referring to, light emitting display devicemay include a light emitting display panel DP, a power supply module PM, a first electric module EM, and a second electric module EM. The light emitting display panel DP, the power supply module PM, the first electric module EM, and the second electric module EMmay be electrically connected to each other. In, the display pixel and the touch sensor TS positioned in the display area DA among the configuration of the light emitting display panel DP are illustrated as an example. Most of the parts depicted inare commercially available, well-known parts.

1000 The power supply module PM may supply the power required for the overall operation of the light emitting display device. The power supply module PM may include a conventional battery module.

1 2 1000 1 The first electric module EMand the second electric module EMmay include various functional modules for operating the light emitting display device. The first electric module EMmay be directly mounted on a motherboard electrically connected to the display panel DP or mounted on a separate substrate to be electrically connected to the motherboard through a connector (not shown).

1 The first electric module EMmay include a control module CM, a wireless communication module TM, an image input module IIM, an acoustic input module AIM, a memory MM, and an external interface IF. Some of the modules are not mounted on the motherboard, but may be electrically connected to the motherboard through the flexible printed circuit board connected thereto.

1000 The control module CM may control the overall operation of the light emitting display device. The control module CM may be a microprocessor. For example, the control module CM activates or deactivates the display panel DP. The control module CM may control other modules such as the image input module IIM or the acoustic input module AIM based on the touch signal received from the display panel DP.

1 2 The wireless communication module TM may transmit/receive a wireless signal with another terminal by using a Bluetooth or Wi-Fi line. The wireless communication module TM may transmit/receive a voice signal using a general communication line. The wireless communication module TM includes a transmitter TMthat modulates and transmits a signal to be transmitted, and a receiver TMthat demodulates a received signal.

The image input module TIM may process the image signal to be converted into image data that can be displayed on the light emitting display panel DP. The acoustic input module AIM may receive an external sound signal input by a microphone in a recording mode, a voice recognition mode, etc. to be converted into electrical voice data.

The external interface IF may serve as an interface connected to an external charger, a wired/wireless data port, a card socket (e.g., a memory card, SIM/SIM card), and the like.

2 2 1 1 FIG. 2 FIG. The second electric module EMmay include an acoustic output module AOM, a light emitting module LM, a light receiving module LRM, and a camera module CMM, and at least some of these may be positioned on the back of the display area DA as the optical element ES as shown inand. The optical element ES may include the light emitting module LM, the light receiving module LRM, and the camera module CMM. In addition, the second electric module EMmay be directly mounted on the motherboard or mounted on a separate substrate to be electrically connected to the light emitting display panel DP through a connector (not shown), or electrically connected to the first electric module EM.

The acoustic output module AOM may convert the acoustic data received from the wireless communication module TM or the acoustic data stored in the memory MM to sound output.

The light emitting module LM may generate and output light. The light emitting module LM may output infrared light. For example, the light emitting module LM) may include an LED element. For example, the light-receiving module LRM may detect infrared light. The light receiving module LRM may be activated when infrared light above a certain level is detected. The light receiving module LRM may include a CMOS sensor. After the infrared light generated by the light emitting module LM is output, the light may be reflected by an external subject (e.g., a user's finger or a face), and the reflected infrared light may be incident on the light receiving module LRM. The camera module CMM may take external images.

In an embodiment, the optical element ES may additionally include an optical detecting sensor or a thermal detecting sensor. The optical element ES may detect an external object received through the front surface or may provide a sound signal such as a voice through the front surface to the outside. Also, the optical element ES may include a plurality of configurations, and is not limited to any one embodiment.

2 FIG. Again referring to, the housing HM may be combined with the cover window WU. The cover window WU may be disposed in front of the housing HM. The housing HM may be combined with the cover window WU to provide a predetermined accommodation space. The light emitting display panel DP and the optical element ES may be accommodated in a predetermined accommodation space provided between the housing HM and the cover window WU.

1000 The housing HM may include a material with relatively high rigidity. For example, the housing HM may include a plurality of frames and/or plates made of glass, plastic, or metal, or a combination thereof. The housing HM may reliably protect the components of the light emitting display devicehoused in the interior space from external impact.

1000 4 FIG. Hereinafter, the structure of the light emitting display deviceaccording to another embodiment is described with reference to.

4 FIG. is a perspective view schematically showing a light emitting display device according to another embodiment.

4 FIG. 1000 The embodimentshows a foldable light emitting display device in which the light emitting display deviceis folded through a folding line (FAX).

2 4 FIG. In the foldable light emitting display device, the first element area DA(hereinafter referred to as a component area) may be disposed on an edge of one side as shown in.

2 2 4 FIG. The optical element such as a camera or an optical sensor is positioned on the back of the first element area DAof, and the light transmitting area is positioned in the first element area DA.

4 FIG. 1000 1000 1000 3 Referring to, in an embodiment, the light emitting display devicemay be the foldable light emitting display device. The light emitting display devicemay be folded outward or inward based on the folding axis FAX. When being folded outward based on the folding axis FAX, the display surfaces of the light emitting display deviceare respectively positioned on the outside in the third direction DR, so that the images may be displayed in both directions. When being folded inward based on the folding axis FAX, the display surface may not be visible from the outside.

1000 The light emitting display devicemay include the housing, the light emitting display panel, and the cover window.

In an embodiment, the light emitting display panel may include the display area DA and the non-display area PA. The display area DA is an area in which the image is displayed and may simultaneously be an area in which an external input is sensed. The display area DA may be an area in which a plurality of pixels to be described later are disposed.

1 2 1 1 1 1 2 1 1 1 2 1 1 1 2 1 1 1 2 3 1 1 1 2 The display area DA may include the first display area DAand the first element area DA. Also, the first display area DAmay be divided in to a first/first display area DA-, a first/first element area DA-, and a folding area FA. The first/first display area DA-and the first/first element area DA-may be positioned on the left and right sidesof the folding axis FAX, and the folding area FA may be positioned between the first/first display area DA-and the first/first element area DA-. At this time, when being folded outward based on the folding axis FAX, the first/first display area DA-and the first/first element area DA-are positioned on both sides in the third direction DR, and the images may be displayed in both directions. In addition, when being folded inward based on the folding axis FAX, the first/first display area DA-and the first/first element area DA-may not be visible from the outside.

5 FIG. Hereinafter, the structure of the light emitting display panel DP according to an embodiment is described with reference to.

5 FIG. is a schematic cross-sectional view of a light emitting display device according to an embodiment.

110 540 541 220 230 230 230 230 230 230 The light emitting display panel DP according to an embodiment may display the image by forming the light emitting diode (LED) on the substrateand detect the touch by including a plurality of detecting electrodesand, and may include a light blocking layerand color filtersR,G, andB so that light emitted from the light emitting diode (LED) has a color characteristic of the color filtersR,G, andB.

220 400 230 230 230 230 230 230 220 230 230 230 230 400 230 230 230 1 220 230 220 230 230 220 230 230 230 220 230 1 230 220 230 230 230 230 400 230 230 220 230 230 220 220 5 FIG. 6 FIG. 8 FIG. 5 FIG. by The light blocking layeris a layer formed on the encapsulation layerthat has at least one opening OPBM corresponding to each color filterR,G, andB. Each color filterR,G, andB overlaps the corresponding opening OPBM of the light blocking layeron a plane and fills the corresponding opening OPBM. A color filter layer including red color filterR, green color filterG, and blue color filterB are formed on the light blocking layer and in the openings OPBM in the light blocking layer. Initially, the color filter layer is just one color of color filter (the red color filterR in the embodiment of) disposed on the encapsulation layer. Parts of the color filter layer are moved to form a color filter opening (also referring to OPCrg, OPCrb as shown inand) in the locations corresponding to the other two color filtersG andB. As a result, the red color filter (an overlapping partR-) is positioned on the light blocking layer. That is, the red color filterR is formed on the light blocking layer, and the red color filterR-m (hereinafter referred to as a main part) is additionally formed in the opening OPBM for the red color filterR among the openings OPBM in the light blocking layer. The red color filterR may have a structure including a main partR-m positioned in the opening OPBM for the red color filterR of the light blocking layerand an overlapping partR-connecting the adjacent main partsR-m and overlapping the light blocking layeron a plane. Here, openings may be formed in the color filterR orG orB (the red color filterR in the embodiment of) formed on the encapsulation layerusing a mask, and the remaining color filtersG andB may be formed by using the inkjet method to deposit the color filter material in the opening of the color filter or the light blocking layer. The remaining color filtersG andB may have a structure that positions only the portion overlapping with the remaining openings OPBM of the light blocking layer, fills the inside of the opening OPBM, and may also overflow to cover edge parts of the light blocking layer.

220 230 380 380 380 In addition, a polarizer is not formed on the front surface of the light emitting display panel DP according to an embodiment, and the light blocking layerand the color filterare formed on the upper part while using a black pixel defining layerinstead thereof, so even if external light is incident inside, the external light is blocked by the black pixel defining layerand not reflected to the outside, thereby it may be prevented from being transmitted to the user. In this case, the black pixel defining layermay be formed of a black color organic material including a light blocking material.

5 FIG. 385 380 385 385 1 385 2 385 1 385 1 385 385 The light emitting display panel DP ofmay have a spacerhaving a stepped structure on the black pixel defining layer. The spacerincudes a first portion-having a high height and a second portion-that is lower than the first portion-and positioned around the first portion-. The spacermay reduce defects due to a pressure by increasing scratch strength of the light emitting display device DP, and also increase adherence with a functional layer FL positioned on the spacer, thereby preventing moisture and air from permeating from the outside. In addition, high adherence may eliminate a problem of the adherence between layers failing when the light emitting display panel DP has a flexible characteristic and is folded and unfolded.

5 FIG. The light emitting display panel DP according to an embodimentis described in detail as follows.

110 The substratemay include a material that does not bend due to a rigid characteristic such as glass, or a flexible material that can be bent, such as plastic or polyimide.

110 180 5 FIG. A plurality of thin film transistors are formed on the substrate, but are omitted in, and only the organic layercovering the thin film transistor is shown.

5 FIG. 18 FIG. 19 FIG. 5 FIG. 180 One pixel includes a pixel circuit unit in which a light emitting diode (LED) and a plurality of transistors and a capacitor for transmitting a light emitting current to the light emitting diode (LED) are formed. In, the pixel circuit unit is not shown, and the structure of the pixel circuit unit may vary according to an embodiment, but an embodiment will be described later inand. The configurations from the organic layercovering the pixel circuit unit are shown in.

180 On the organic layer, a light emitting diode (LED) including an anode (Anode), an emission layer EL, and a cathode (Cathode) is positioned.

The anode (Anode) may be composed of a single layer including a transparent conductive oxide film and a metal material, or a multi-layer including the same. The transparent conductive oxide layer may include ITO (Indium Tin Oxide), poly-ITO, IZO (Indium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), etc., and the metal material may include silver (Ag), molybdenum (Mo), copper (Cu), gold (Au), aluminum (Al), etc.

230 230 230 The emission layer EML may be formed of an organic light emitting material, and adjacent emission layers EML may display different colors. On the other hand, according to an embodiment, each of the emission layer EML may display light of the same color due to the color filtersR,G, andB positioned on the upper part.

380 180 380 380 380 380 380 A black pixel defining layeris positioned on the organic layerand the anode (Anode), the black pixel defining layerincludes an opening OP, the opening overlaps a part of the anode (Anode), and the emission layer EML is positioned on the anode (Anode) exposed by the opening OP. The emission layer EML may be positioned only within the opening of the black pixel defining layer, and is separated from the adjacent emission layer EML by the black pixel defining layer. The black pixel defining layermay be formed of an organic material having a negative type of black color. An organic material having the black color may be used as the light blocking material, and the light blocking material may include carbon black, carbon nanotubes, a resin or paste containing a black dye, metal particles, for example, nickel, aluminum, molybdenum, and alloys thereof, metal oxide particles (e.g., chromium nitride), etc. The black pixel defining layermay have a black color by including a light blocking material, and may have a characteristic of absorbing/blocking light instead of reflecting light. Where the negative type is used as the organic material, parts covered by the mask is removed.

385 380 385 385 1 385 2 385 1 385 2 385 385 1 385 2 380 385 1 385 2 385 5 FIG. The spaceris formed on the black pixel defining layer. The spacerincludes a first portion-having a first height and positioned in a narrow area, and a second portion-having a second height and positioned in a wide area. The first height is greater than the second height. In, the first portion-and the second portion-are indicated to be separated through a line in the spacer, respectively. Here, the first portion-may provide rigidity against the pressure. The second portion-may serve as a contact assistant between the black pixel defining layerand the overlying functional layer FL. The first portion-and the second portion-may be formed of the same material, and may be formed of a positive type of photosensitive organic material, for example, photosensitive polyimide (PSPI) may be used. Since it has a positive characteristic, the portion not covered by the mask may be removed upon irradiation. The spacerhas transparency so that light may be transmitted and/or reflected.

380 385 385 2 380 380 385 More than 90% of the upper surface of the black pixel defining layeris covered by the spacer, and the edge of the second portion-has a structure that is spaced apart from the edge of the black pixel defining layer, so that the part of the black pixel defining layeris not covered by the spacer.

385 380 385 The functional layer FL is positioned on the spacerand the part of black pixel defining layerthat is not covered by the spacer, and the functional layer FL may be formed on the entire surface of the light emitting display device DP. The functional layer FL may include an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer, and the functional layer FL may be positioned on/under the emission layer EML. That is, the hole injection layer, the hole transport layer, the emission layer EML, the electron transport layer, the electron injection layer, and the cathode (Cathode) are sequentially positioned on the anode (Anode) thereby the hole injection layer and the hole transport layer among the functional layer FL may be positioned under the emission layer EML, and the electron transport layer and the electron injection layer may be positioned on the emission layer EML.

The cathode (Cathode) may be formed of a light-transmitting electrode or a reflecting electrode. According to an embodiment, the cathode may be a transparent or semi-transparent electrode, and may be formed of a metal thin film having a small work function, including lithium (Li), calcium (Ca), lithium fluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum (Al), silver (Ag), magnesium (Mg), and a compound thereof. In addition, a transparent conductive oxide (TCO) such as Iridium Tin Oxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), or indium oxide (In2O3) may be further disposed on the metal thin film. The cathode may be integrally formed over the entire surface of the light emitting display device DP.

400 400 401 402 403 400 400 5 FIG. An encapsulation layeris positioned on the cathode (Cathode). The encapsulation layerincludes at least one inorganic layer and at least one organic layer, and in, it has a triple layer structure including the first inorganic encapsulation layer, the organic encapsulation layer, and the second inorganic encapsulation layer. The encapsulation layermay be to protect the emission layer EML formed of an organic material from moisture or oxygen that may be inflowed from the outside. According to an embodiment, the encapsulation layermay include a structure in which an inorganic layer and an organic layer are sequentially further stacked.

501 510 511 540 541 400 540 541 540 541 501 510 511 501 510 511 540 541 501 541 510 541 540 511 540 220 511 230 230 230 5 FIG. Detecting insulating layers,, andand a plurality of detecting electrodesandare positioned on the encapsulation layerfor touch sensing. In an embodiment of, the touch is sensed in a capacitive type using two detecting electrodesand, but according to an embodiment, the touch may be sensed in a self-cap type using one detecting electrode. A plurality of detecting electrodes, andmay be insulated with the detecting insulating layers,, andinterposed therebetween, and some of them may be electrically connected through openings positioned on the detecting insulating layers,, and. Here, the detecting electrodesandmay include a metal or a metal alloy such as aluminum (Al), copper (Cu), silver (Ag), gold (Au), molybdenum (Mo), titanium (Ti), or tantalum (Ta), and may be composed of a single layer or multiple layers. In the present embodiment, the lower detecting insulating layeris positioned under the lower detecting electrode, the middle detecting insulating layeris positioned between the lower detecting electrodeand the upper detecting electrode, and the upper detecting insulating layeris positioned between the upper detecting electrodeand the light blocking layer. The upper detecting insulating layermay also be positioned under the color filtersR,G, andB.

220 230 230 230 540 The light blocking layerand the color filtersR,G, andB are positioned on the upper detecting electrode.

220 540 541 220 220 380 220 380 380 220 380 380 220 The light blocking layermay be positioned to overlap the detecting electrodesandon a plane. The light blocking layerhas an opening OPBM (hereafter also referred to as a light blocking layer opening), and the opening OPBM of the light blocking layeris aligned with the opening OP (hereafter referred to as a pixel definition layer opening) of the black pixel defining layersuch that one is above the other. In addition, the opening OPBM of the light blocking layermay be formed wider than the opening OP of the black pixel defining layer, so the opening OP of the black pixel defining layermay be smaller than the opening OPBM of the light blocking layerin plan view. The anode (Anode) overlapping with the opening OP of the black pixel defining layer(i.e., exposed by the opening OP of the black pixel defining layer) may also have a structure that is not covered by the light blocking layeron a plane.

230 230 230 501 510 511 220 230 230 230 230 230 230 230 230 1 220 220 230 1 230 220 230 1 230 230 5 FIG. The color filtersR,G, andB are positioned on the detecting insulating layers,, andand the light blocking layer. The color filtersR,G, andB include a red color filterR that transmits red light, a green color filterG that transmits green light, and a blue color filterB that transmits blue light. In the embodiment of, the red color filterR further includes an overlapping partR-overlapping the light blocking layerin addition to the main part position in the opening OPBM of the light blocking layer. The overlapping partR-of the red color filterR may be positioned on all the light blocking layers. The overlapping partR-may have a structure that connects adjacent main parts to each other. According to an embodiment, the overlapping part may be formed of the green color filterG and the blue color filterB.

230 230 230 Each of the color filtersR,G, andB may be positioned to overlap the anode (Anode) of the light emitting diode (LED) on a plane. Since light from the emission layer EML may be emitted while being changed to a corresponding color through the color filter, all of the light emitted from the emission layer EL may have the same color. However, in the emission layer EML, different colors of light are displayed, and the displayed color may be enhanced by passing through the color filter of the same color.

220 230 230 230 230 230 230 The light blocking layermay be positioned between the color filtersR,G, andB. According to an embodiment, the color filtersR,G, andB may be replaced with a color conversion layer, or may further include a color conversion layer. The color conversion layer may include quantum dots.

550 230 230 230 230 230 230 550 A planarization layercovering the color filtersR,G, andB is positioned on the color filtersR,G, andB. The planarization layeris for planarizing the upper surface of the light emitting display panel, and may be a transparent organic insulator containing at least one material selected from a group consisting of polyimide, polyamide, acryl resin, benzocyclobutene, and phenol resin.

550 According to the embodiment, on top of the planarization layer, a low refractive layer and an additional planarization layer may be further positioned to improve front visibility and light output efficiency of the display panel. Light may be emitted while being refracted to the front by the low refractive layer and the additional planarization layer having a high refractive characteristic.

550 380 220 In the present embodiment, there is no polarizer on the planarization layer. Usually, The polarizer may serve to prevent display deterioration recognizable by the user caused by external light being incident and reflected from the anode and the like. However, in the present embodiment, the black pixel defining layercovers the side of the anode (Anode) to reduce the degree of the reflection from the anode (Anode), and the light blocking layeris also formed to reduce the amount of incident light. Hence, a structure for preventing the deterioration of the display quality due to the reflection is already included and there is no need to separately form the polarizer on the front of the light emitting display device DP.

400 110 400 380 385 110 The light emitting display panel DP according to the embodiment may be largely divided into a lower panel layer and an upper panel layer. The lower panel layer is the part where the light emitting diode (LED) and the pixel circuit unit constituting the pixel are positioned, and can include up to the encapsulation layercovering it. That is, the lower panel layer extends from the substrateto the encapsulation layerand includes the anode (Anode), the black pixel defining layer, the emission layer EML, the spacer, the functional layer FL, and the cathode (Cathode), and includes the insulating layer, the semiconductor layer, and the conductive layer between the substrateand the anode (Anode).

400 501 510 511 540 541 220 230 230 230 550 On the other hand, the upper panel layer is a portion positioned on the encapsulation layer, and includes the detecting insulating layers,, andand a plurality of detecting electrodes, andcapable of detecting the touch, and may include the light blocking layer, the color filtersR,G, andB, and the planarization layer.

6 FIG. Hereinafter, the planar structure based on the upper panel layer is described with reference to.

6 FIG. is a top plan view of a part of an upper panel layer of a light emitting display device according to an embodiment.

6 FIG. 6 FIG. 220 230 230 230 380 220 380 1 2 380 In, in addition to the planar structure of the light blocking layerand the color filtersR,G, andB included in the upper panel layer, the opening OP of the black pixel defining layerpositioned in the lower panel layer is also shown. According to, the light blocking layerincludes an opening OPBM. The opening OP of the black pixel defining layeris aligned with the opening OPBM and has a smaller cross sectional area in the DR-DRplane. As a result, in plan view, the opening OP of the black pixel defining layermay be smaller than the opening OPBM and appear to be positioned “inside” the opening OPBM.

230 230 230 220 230 230 230 230 400 230 230 220 6 FIG. 6 FIG. 6 FIG. The color filtersR,G, andB are positioned on the light blocking layer. One (the red color filterR in the embodiment of) of the color filtersR,G, andB is disposed to blanket cover the encapsulation layer, then parts of it are removed to create the color filter openings OPCrg and OPCrb. The remaining two colors (the green and blue color filtersG andB in the embodiment of) are disposed in the color filter openings OPCrg and OPCrb and/or the opening OPBM of the light blocking layer. In, color filter of each color is shown with a different hatching.

230 220 230 1 220 220 230 1 220 220 230 1 540 220 The red color filterR covers the light blocking layerand includes an overlapping partR-overlapping the light blocking layeron a plane and connecting the adjacent main parts in addition to the main part filling the opening OPBM for the red pixel among the opening OPBM of the light blocking layer. The overlapping partR-overlapping the light blocking layermay be positioned on light blocking layers. Also, the overlapping partR-mayc over the detecting electrodepositioned under the light blocking layer.

6 FIG. 230 220 380 380 220 In, around the main part of the red color filterR, the opening OPBM for the red pixel of the light blocking layerand the opening OP of the black pixel defining layerare positioned, and the opening OP of the black pixel defining layeris positioned inside the opening OPBM for the red pixel of the light blocking layer.

230 230 220 220 On the other hand, the red color filterR includes the color filter openings OPCrg and OPCrb respectively corresponding to the positions corresponding to the opening OPBM for the green pixel and the opening OPBM for the blue pixel. The color filter openings OPCrg and OPCrb of the red color filterR are formed wider than the opening OPBM of the light blocking layerso that the opening OPBM of the light blocking layermay be positioned inside the color filter openings OPCrg and OPCrb in a plan view.

220 380 230 230 380 110 220 110 110 3 230 230 230 230 230 230 220 380 6 FIG. The color filter openings OPCrg and OPCrb, the opening OPBM of the light blocking layer, and the opening OP of the black pixel defining layerare positioned at the portion where the green color filterG and the blue color filterB are to be formed. The opening OP of the black pixel defining layeris positioned closest to the substrate, the opening OPBM of the light blocking layeris farther from the substratethan the opening OP, and the color filter openings OPCrg and OPCrb are positioned even farther out from the substratein the third direction DR. The green and blue color filtersG andB have a structure that covers all of these openings, so that the edges of the green and blue color filtersG andB are positioned outside the boundary of the color filter openings OPCrg and OPCrb. Therefore, the color filter openings OPCrg and OPCrb are positioned on the inside of the green and blue color filtersG andB, the opening OPBM of the light blocking layeris positioned on the inside of the color filter openings OPCrg and OPCrb, and the opening OP of the black pixel defining layeris positioned inside of the opening OPBM in the plan view of.

230 220 230 230 The green color filterG is formed at the position overlapping the opening OPBM for the green pixel of the light blocking layerand the color filter opening OPCrg of the red color filterR for the green pixel. The green color filterG is formed in the opening OPBM for the green pixel and the color filter opening OPCrg for the green pixel and may be formed larger than the opening OPBM.

230 220 230 230 The blue color filterB is formed in the positions overlapping the opening OPBM for the blue pixel of the light blocking layerand the color filter opening OPCrb of the red color filterR for the blue pixel. The blue color filterB is formed in the opening OPBM for the blue pixel and the color filter opening OPCrb for the blue pixel and may be formed larger than the opening OPBM.

6 FIG. 385 1 385 220 230 1 230 385 1 385 380 3 220 230 1 230 3 Referring to, the position of the first portion-among the spaceris also shown, and it may be formed at the position overlapping the light blocking layerand the overlapping partR-of the red color filterR. However, the first portion-of the spaceris formed on the black pixel defining layerbased on the third direction DR, but is formed below the light blocking layeror the overlapping partR-of the red color filterR based on the third direction DR.

230 230 220 380 7 FIG. 11 FIG. 15 FIG. 17 FIG. The green color filterG, the blue color filterB, the color filter openings OPCrg and OPCrb, the opening OPBM of the light blocking layer, and the opening OP of the black pixel defining layermay have the same planar shape as each other or may have a chamfered shape. That is, in addition to a circle, a triangle, a quadrangle, and a polygon, they may have a shape of which polygon edges are chamfered. An example of the embodiment in which such a shape has been changed is described with reference to,to, and.

220 230 230 230 7 FIG. 9 FIG. Hereinafter, the planar and cross-section structures of the light blocking layerand the color filtersR,G, andB according to an embodiment and the manufacturing method thereof will be reviewed with reference toto.

7 FIG. 8 FIG. First, the planar and cross-section structures are described with reference toand.

7 FIG. 8 FIG. 7 FIG. is a top plan view schematically showing a structure of a color filter according to an embodiment, andis a schematic cross-sectional view of a part of a light emitting display device according to an embodiment of.

7 FIG. 7 FIG. 6 FIG. 230 230 230 220 380 In the planar structure of, the color filtersR,G, andB are only shown and other parts are omitted. Also, in the planar structure of, unlike, color filter openings OPCrg and OPCrb of the color filter having a rhombus shape and the color filter are shown. At this time, the opening OPBM positioned on the light blocking layerand the opening OP of the black pixel defining layermay also have shapes corresponding to the color filter openings OPCrg and OPCrb of the color filter. The shape of the opening and the shape of the color filter may have various planar shapes such as a circle, a quadrangle, and a polygon, and may have a shape with chamfered edges.

7 FIG. 230 400 230 220 230 230 230 1 230 1 230 230 1 220 Referring to, the red color filterR covers substantially the entire surface of the encapsulation layerexcept for the color filter openings OPCrg and OPCrb at the positions corresponding to the opening OPBM for the green pixel and the opening OPBM for the blue pixel. As used herein, the part of the red color filterR that is in the opening OPBM for the red pixel of the light blocking layeris referred to as the main partR-m and the rest of the red color filterR that do not cover any of the openings OPBMs is called an overlapping partR-. The overlapping partR-connects the adjacent main partsR-m to each other. The overlapping partR-may be positioned on any light blocking layer.

230 220 230 230 230 The green color filterG is formed in the color filter opening OPCrg and the adjacently-located opening OPBM for the green pixel of the light blocking layer. In some embodiments, the green color filterG is formed only in the color filter opening OPCrg for the green pixel and the adjacent opening OPBM, and nowhere else. The green color filterG is formed in the opening OPBM for the green pixel and the color filter opening OPCrg for the green pixel and is formed such that the color filter opening OPCrg may be smaller than the green color filterG in plan view.

230 220 230 230 230 The blue color filterB is formed in the color filter opening OPCrb for the blue pixel and the adjacently-located opening OPBM for the blue pixel of the light blocking layer. In some embodiments, the blue color filterB is formed only in the color filter opening OPCrb and the adjacent opening OPBM for the blue pixel and nowhere else. The blue color filterB is formed in the opening OPBM for the blue pixel and the color filter opening OPCrb for the blue pixel and is formed such that the color filter opening OPCrb may be smaller than the blue color filterB in plan view.

220 220 The openings OPBM of the light blocking layerand the color filter openings OPCrb and OPCrg may overlap each other in a plan view and one of them may be disposed inside of the other of them in plan view. In an embodiment, the openings OPBM of the light blocking layermay disposed inside of the color filter openings OPCrb and OPCrg in plan view.

230 230 230 8 FIG. The cross-section structure of the color filtersR,G, andB is described through.

8 FIG. 8 FIG. 540 400 400 540 As shown in, the detecting electrodeis positioned on the encapsulation layerfor touch sensing. In, the encapsulation layeris illustrated as one layer, but in some embodiments, it may be formed as a plurality of layers including an inorganic layer and an organic layer. Also, the detecting electrodemay include six or more insulated electrodes.

540 220 220 230 230 230 220 230 230 230 220 230 1 230 220 The detecting electrodeis covered by the light blocking layer. The opening OPBM is positioned between the light blocking layers. Each of the color filtersR,G, andB is positioned in the opening OPBM in the layer of light blocking layer. In addition, the color filtersR,G, andB of each color may be partially positioned on the light blocking layer, but the overlapping partR-of the red color filterR formed as a whole may be positioned on all the light blocking layers.

9 FIG. Hereafter, the manufacturing method of the color filter according to an embodiment is described with reference to.

9 FIG. 8 FIG. is a view sequentially showing a manufacturing method of a color filter according to an embodiment of.

The partial manufacturing method including the color filter among the manufacturing method of the display device according to an embodiment may include forming a light blocking layer including a first opening, a second opening, and a third opening on an encapsulation layer, forming a first color filter respectively having a color filter opening overlapping the second opening and the third opening on a plane by using a mask after stacking an organic material for the first color filter on an entire area, completing a second color filter by forming an organic material for the second color filter by an inkjet method on a part overlapping the second opening on a plane, and completing a third color filter by forming an organic material for the third color filter by an inkjet method on a part overlapping the third opening on a plane.

9 FIG. 8 FIG. 10 FIG. Each step is described based onwith reference toand.

9 FIG.(A) 9 FIG.(A) 540 220 400 230 230 400 220 400 400 220 In, after forming the detecting electrodeand the light blocking layeron the encapsulation layer, the organic material for the red color filterR is disposed thereon. As shown in, the organic material for the red color filterR may be blanket deposited on the entire surface of the encapsulation layerto cover the light blocking layerson the encapsulation layerand exposed parts of the encapsulation layer. An opening OPBM is formed in the layer of light blocking layerby removing parts of the layer. The opening OPBM is formed for each color filter of each color.

9 FIG.(B) 230 230 230 230 220 230 1 220 230 230 Next, as shown in, the organic material for the red color filterR is irradiated and developed with a mask to form a structure including color filter openings OPCrg and OPCrb. In this case, as the structure of the red color filterR is completed, the red color filterR has a main partR-m filling the opening OPBM for the red pixel of the light blocking layerand an overlapping partR-covering the rest of the surface including the light blocking layerand connecting the adjacent main partsR-m. Openings OPCrg and OPCrb are formed in the red color filterR, and these are intended for green and blue color filters, respectively.

9 FIG.(C) 230 230 230 Next, as shown in, the organic material for the green color filterG is formed by an inkjet method on the color filter opening OPCrg of the red color filterR for the green pixel to complete the green color filterG.

8 FIG. 230 230 230 230 Next, as shown in, the organic material for the blue color filterB is formed in the color filter opening OPCrb for the blue pixel that is formed in the layer of red color filterR. The material for the blue color filterB is disposed by an inkjet method to complete the blue color filterB, thereby also forming the entire structure of the final color filter layer.

230 230 According to this manufacturing method, when forming the green color filterG and the blue color filterB, there is no need to perform the exposure and development process because an additional mask is not used, and since it may be formed by simply spraying in the inkjet method, there is a merit of shortening the manufacturing process time and reducing the cost.

19 FIG. Particularly, the light emitting display device with the layered structure likehas a lot of the layer structure, so the number of masks used is large, and by using only one mask instead of using three masks to form the color filter, the manufacturing process time and cost may be reduced.

230 1 10 FIG. On the other hand, according to an embodiment, the part of the color filter layer having the overlapping partR-may be formed after the color filters of the other two colors, resulting in the structure described with reference to.

10 FIG. 8 FIG. is a schematic cross-sectional view showing a variation structure of an embodiment of.

10 FIG. 230 230 1 230 230 shows an embodiment in which the red color filterR has the overlapping partR-formed after the color filtersG andB of two different colors.

10 FIG. 8 FIG. 230 230 230 220 The structure ofunlikeshows a structural difference in which the color filtersG andB of the other two colors are positioned lower than the red color filterR on the light blocking layerand are formed wider.

10 FIG. The method for manufacturing the structure ofis described as follows.

540 220 400 230 220 230 After forming the detecting electrodeand the light blocking layeron the encapsulation layer, the organic material for the green color filterG is formed in the opening OPBM for the green pixel of the light blocking layerby an inkjet method, and the organic material for the blue color filterB is formed in the opening OPBM for the blue pixel by an inkjet method.

230 400 After forming the organic material for the red color filterR on the encapsulation layer, a mask is placed over the organic material and developed to form the color filter openings OPCrg and OPCrb.

10 FIG. According to this process, the cross-section structure ofmay be completed.

11 FIG. 12 FIG. Next, an embodiment in which the color filter of the different color has the overlapping part is described with reference toand.

11 FIG. 12 FIG. 7 FIG. andare top plan views showing a variation structure of an embodiment of.

230 230 1 230 230 1 11 FIG. First, an embodiment in which the green color filterG has the overlapping partG-is described with reference to. This embodiment differs from the above embodiments where the red color filterR has the overlapping partR-.

11 FIG. 230 400 230 220 230 1 220 230 1 230 230 1 220 Referring to, the green color filterG has color filter openings OPCgr and OPCgb respectively positioned at the positions corresponding to the opening OPBM for the red pixel and the opening OPBM for the blue pixel and covers other parts of the encapsulation layer. Among them, it has a main partG-m filling the opening OPBM for the green pixel of the light blocking layerand an overlapping partG-covering at least part of the light blocking layer. The overlapping partG-connects the green color filterG parts positioned in the openings OPBM for the adjacent green pixels to each other. The overlapping partG-may be positioned on any light blocking layer.

230 230 230 230 230 230 230 230 The red color filterR is formed in the position including the color filter opening OPCgr for the red pixel in the green color filterG. In some embodiments, the red color filterR is formed only in the position including the color filter opening OPCgr for the red pixel in the green color filterG. The blue color filterB is formed in the position including the color filter opening OPCgb for the blue pixel in the green color filterG. In some embodiments, the blue color filterB is formed only in the position including the color filter opening OPCgb for the blue pixel in the green color filterG.

230 230 1 12 FIG. An embodiment in which the blue color filterB has the overlapping partB-is described with reference to.

12 FIG. 230 230 1 400 230 220 230 1 220 230 1 230 230 1 220 Referring to, the blue color filterB has color filter openings OPCbr and OPCbg at positions corresponding to the opening OPBM for the red pixel and the opening OPBM for the green pixel, and has overlapping partB-formed 0n other parts of the encapsulation layer. Among them, it has a main partB-m filling and covering the opening OPBM for the blue pixel of the light blocking layerand an overlapping partB-overlapping the light blocking layer. The overlapping partB-connects the adjacent blue color filterB parts positioned within the opening OPBM for the blue pixel to each other. The overlapping partB-may be positioned on any light blocking layer.

230 230 230 230 At this time, the red color filterR is formed in the color filter opening OPCbr for the red pixel of the blue color filterB, and the green color filterG is formed in the color filter opening OPCbg for the green pixel of the blue color filterB.

13 FIG. 15 FIG. 13 FIG. 15 FIG. Hereinafter, a modified embodiment is described throughto, and in the embodiment shown into, an embodiment with the chamfered edges is shown.

13 FIG. 15 FIG. toare top plan views schematically showing a structure of a color filter, a light blocking layer, and a pixel definition layer according to an embodiment.

13 FIG. 15 FIG. 7 FIG. 11 FIG. 12 FIG. 13 FIG. 15 FIG. 380 toshow variations of the structures depicted in,, and. Into, the corner part of the rhombus structure has a chamfered structure and an opening OP of the black pixel defining layeris additionally shown.

13 FIG. 230 230 1 shows an embodiment in which the red color filterR has the overlapping partR-.

230 220 380 220 220 13 FIG. 13 FIG. Although the opening of the color filterR is not shown in, it is formed in a position corresponding to the opening OPBM of the light blocking layer. Also, in, it may be confirmed that the opening OP of the black pixel defining layeris also shown, is small compared to the opening OPBM of the light blocking layer, and is formed inside the opening OPBM of the light blocking layerin plan view.

230 230 1 220 230 230 220 230 1 220 The red color filterR has the structure in which the overlapping partR-overlaps the light blocking layerand connects the main partR-m of the red color filterR that is formed while filling the opening OPBM of the light blocking layer. The overlapping partR-may be positioned on the entire light blocking layer.

14 FIG. 15 FIG. 13 FIG. 230 230 1 230 230 1 On the other hand,and, differently from, show an embodiment in which the green color filterG has the overlapping partG-and an embodiment in which the blue color filterB has the overlapping partB-.

220 230 230 230 In the above, the structures of the light blocking layerand the color filtersR,G, andB formed in the general display area of the light emitting display panel DP were examined.

Hereinafter, a structure in a case having an area (a light transmitting area or a photosensor area OPS) positioned at a partial area among the display area and capable of transmitting a light is described.

220 230 230 230 2 16 FIG. Hereinafter, the structure of the light blocking layerand color filterR,G, andB is described with reference toin an embodiment in which the light emitting display panel DP has the first element area DAincluding the light transmitting area and the photosensor area OPS (hereinafter also referred to as an optical sensor area) positioned therearound.

16 FIG. is an enlarged top plan view of some areas of a light emitting display device according to an embodiment.

16 FIG. shows the part of the light emitting display panel DP among the light emitting display device according to an embodiment and uses a display panel for a mobile phone.

1 2 1 2 1 2 2 2 2 16 FIG. 16 FIG. 16 FIG. 16 FIG. The light emitting display panel DP is disposed on the entire surface of the display area DA, and the display area DA is largely divided into a first display area DA(hereafter referred to as a main display area) and a first element area DA(hereafter referred to as a component area). A pixel including a light emitting diode (LED) may be positioned in the first display area DA, and a light transmitting area other than the pixel including the light emitting diode (LED) may be positioned in the first element area DA. In the embodiment of, a plurality of photosensor areas OPS are positioned in the first display area DAof the position adjacent to the first element area DA. In the embodiment of, the photosensor area OPS is positioned to the left of the first element area DA. Referring to, the display area DA further include a second element area OPS disposed near the first element area DA. In, the corresponding optical element for the first element area DAmay be a camera, and the corresponding optical element for the second element area OPS may be an optical sensor. The second element area OPS may be made only by light transmitting parts, and may not display an image. In an embodiment, the second element area OPS and a pixel disposed adjacent to the second element area OPS may be called together as a third display area. The position and number of the photosensor areas OPS may vary for each embodiment.

1 1 The first display area DAincludes a plurality of light emitting diodes (LED), and a plurality of pixel circuit units generating a light emitting current to be transmitted to a plurality of light emitting diodes (LED). Here, one light emitting diode (LED) and one pixel circuit unit are referred to as a pixel PX. In the first display area DA, one pixel circuit unit and one light emitting diode (LED) are formed one-to-one.

16 FIG. 1 1 In, the structure of the light emitting display panel DP below the cutting line is not shown, but the first display area DAmay be positioned under the cutting line. In the first display area DA, except for the area where the photosensor area OPS is positioned, the structure of the upper panel layer may be the same as that of one embodiment described above.

380 220 230 1 17 FIG. The photosensor area OPS consists of only a transparent layer to allow light to pass through, and there is no conductive layer or semiconductor layer positioned, and an opening (hereinafter also referred to as an additional opening) may be formed at the position corresponding to the photosensor area OPS in the black pixel defining layer, the light blocking layer, and the color filterto have a structure that does not block light. On the other hand, the structure of the upper panel layer in the photosensor area OPS of the first display area DAis described in.

2 On the other hand, the first element area DAis a display area positioned on the front surface of an optical element such as a camera, and has a structure in which a plurality of pixels are formed and a light transmitting area is additionally formed between the adjacent pixels.

16 FIG. 16 FIG. 16 FIG. 2 Although not shown in, a peripheral area may be positioned outside the display area DA.shows a display panel for a mobile phone. However, even for embodiments other than a mobile phone, if it is a display panel where there is an optical element on the back of the display panel, the present embodiment may be applied, and it may also be a flexible display device. In the case of the flexible display device, the position of the first element area DAand the photosensor area OPS may be different from the position of.

4 FIG. 4 FIG. 2 On the other hand, according to the embodiment, it may be a foldable light emitting display device such as in. In the case, the position of the photosensor area OPS may be positioned adjacent to the first element area DAof.

1 17 FIG. Hereinafter, the structure of the upper panel layer in the photosensor area OPS among the first display area DAis described with reference to.

17 FIG. is a top plan view of a part of an upper panel layer of a light emitting display device according to another embodiment.

17 FIG. 6 FIG. 1 220 1 230 380 1 1 220 In, compared with, an additional opening OPBM-is formed in the light blocking layerby corresponding to the additional photosensor area OPS, and an additional opening OPC-(hereinafter referred to as an additional color filter opening) is also formed in the red color filterR. In addition, the black pixel defining layerof the lower panel layer may also have an additional opening OP-and may have the same shape as the additional opening OPBM-of the light blocking layer.

1 230 230 1 The additional opening OPC-formed in the red color filterR is extended from the color filter opening OPCrg for the green pixel and the color filter opening OPCrb for the blue pixel and is integrally formed. That is, in the red color filterR, the color filter opening OPCrg for the green pixel, the color filter opening OPCrb for the blue pixel, and the additional opening OPC-are formed as one opening.

17 FIG. 1 230 230 230 shows an embodiment in which three color filter openings (the color filter opening OPCrg for two green pixels and the color filter opening OPCrb for one blue pixel) and the additional opening OPC-of two red color filtersR are connected to each other and integrally formed. However, the number of the connected openings in the red color filterR may vary. In addition, according to an embodiment, each opening of the red color filterR may be formed separately.

1 220 1 230 380 1 As described above, in the photosensor area OPS, the additional opening OPBM-of the light blocking layer, the additional opening OPC-of the red color filterR, and the black pixel defining layerdo not have the structure for blocking light to the photosensor area OPS by the additional opening OP-. Also, even in the lower panel layer, the conductive layer or the semiconductor layer is not positioned in the photosensor area OPS. As a result, even if the photosensor is positioned on the back side of the light emitting display device DP, the front side of the light emitting display panel DP may be sensed with light.

17 FIG. 1 230 1 220 1 380 1 230 1 220 1 380 1 220 1 230 1 380 1 220 In an embodiment of, the additional opening OPC-of the red color filterR, the additional opening OPBM-of the light blocking layer, and the additional opening OP-of the black pixel defining layeralign with each in plan view with the additional opening OPC-of the red color filterR being the largest, the additional opening OPBM-of the light blocking layerbeing the next largest, and the additional opening OP-of the black pixel defining layerbeing the smallest. As a result, the additional opening OPBM-of the light blocking layermay be positioned inside the additional opening OPC-of the red color filterR, and the additional opening OP-of the black pixel defining layermay be positioned inside the additional opening OPBM-of the light blocking layer.

17 FIG. 6 FIG. Also, the embodiment ofmay have the same structure as the structure ofexcept for the photosensor area OPS.

230 230 1 220 220 220 230 1 220 220 230 1 540 220 That is, the red color filterR further includes an overlapping partR-overlapping the light blocking layeron a plane and connecting the adjacent main parts in addition to the main part overlapping the light blocking layerand filling the opening OPBM for the red pixel among the opening OPBM of the light blocking layer. The overlapping partR-overlapping with the light blocking layermay be positioned on all the light blocking layers. Also, the overlapping partR-may cover the detecting electrodepositioned under the light blocking layer.

220 380 230 230 380 220 The opening OPBM for the red pixel of the light blocking layerand the opening OP of the black pixel defining layerare positioned around the main partR-m of the red color filterR, and the opening OP of the black pixel defining layeris positioned inside the opening OPBM for the red pixel of the light blocking layer.

230 230 220 220 On the other hand, the red color filterR has the color filter openings OPCrg and OPCrb in the positions corresponding to the opening OPBM for the green pixel and the opening OPBM for the blue pixel, respectively. The color filter openings OPCrg and OPCrb of the red color filterR are formed wider than the opening OPBM of the light blocking layer, so that the opening OPBM of the light blocking layermay be positioned on the inside of the color filter openings OPCrg and OPCrb on a plane.

230 230 220 380 380 220 230 230 230 230 230 230 220 380 In the part where the green color filterG and the blue color filterB are positioned, the color filter openings OPCrg and OPCrb, the opening OPBM of the light blocking layer, and the opening OP of the black pixel defining layerare positioned, on a plane, the opening OP of the black pixel defining layeris positioned on the innermost side, then the opening OPBM of the light blocking layeris positioned on the inner side, and the color filter openings OPCrg and OPCrb are positioned on the outermost side. The green and blue color filtersG andB have a structure that covers all of these openings, so that the edges of the green and blue color filtersG andB are positioned outside the boundary of the color filter openings OPCrg and OPCrb. Therefore, in plan view, the color filter openings OPCrg and OPCrb may be positioned on the inside of the green and blue color filtersG andB, the opening OPBM of the light blocking layermay be positioned on the inside thereof, and the opening OP of the black pixel defining layermay be inside thereof.

17 FIG. 385 1 385 220 230 1 230 385 1 385 380 3 220 230 1 230 3 Referring to, the position of the first portion-of the spaceris also shown and may be formed at the position overlapping the light blocking layerand the overlapping partR-of the red color filterR on a plane, and may not overlap the photosensor area OPS. However, the first portion-of the spaceris formed on the black pixel defining layerin the third direction DR, but is positioned under the light blocking layeror the overlapping partR-of the red color filterR based on the third direction DR.

18 FIG. 19 FIG. 1 2 Hereinafter, the structure of the pixel positioned in the lower panel layer of the light emitting display panel DP is described with reference toand. The following pixel structure may be a pixel structure of the first display area DAand/or the first element area DAincluding the photosensor area OPS.

18 FIG. The circuit structure of the pixel is described with reference to.

18 FIG. is a circuit diagram of one pixel included in a light emitting display device according to an embodiment.

18 FIG. 1 2 The circuit structure shown inis a circuit structure of the pixel circuit unit and the light emitting diode (LED) formed in the first display area DAand the first element area DA.

1 2 3 4 5 6 7 127 128 151 152 153 155 171 172 741 boost boost One pixel according to an embodiment incudes a plurality of transistors T, T, T, T, T, T, and T, a storage capacitor Cst, a boost capacitor C, and a light emitting diode (LED), which are connected to several wirings,,,,,,,, and. Here, the transistors and the capacitors except for the light emitting diode (LED) constitute the pixel circuit unit. According to an embodiment, the boost capacitor Cmay be omitted.

127 128 151 152 153 155 171 172 741 127 128 151 152 153 155 171 172 741 151 7 2 7 2 18 FIG. A plurality of wirings,,,,,,,, andare connected to one pixel PX. A plurality of wirings includes a first initialization voltage line, a second initialization voltage line, a first scan line, a second scan line, an initialization control line, a light emitting control line, a data line, a driving voltage line, and a common voltage line. In the embodiment of, the first scan lineconnected to the seventh transistor Tis also connected to the second transistor T, and according to an embodiment, the seventh transistor Tmay be connected by a separate bypass control line unlike the second transistor T.

151 2 7 151 152 151 151 152 152 3 153 4 155 5 6 The first scan lineis connected to a scan driver (not shown) to transmit a first scan signal GW to a second transistor Tand a seventh transistor T. A voltage of an opposite polarity to the voltage applied to the first scan linemay be applied to the second scan lineat the same timing as the signal of the first scan line. For example, when a negative voltage is applied to the first scan line, a positive voltage may be applied to the second scan line. The second scan linetransmits a second scan signal GC to the third transistor T. The initialization control linetransmits an initialization control signal GI to the fourth transistor T. The light emission control linetransmits a light emission control signal EM to the fifth transistor Tand the sixth transistor T.

171 172 127 128 741 172 127 128 741 The data lineis a wire transmitting a data voltage DATA generated from a data driver (not shown), and a luminance emitted by the light emitting diode (LED) is changed depending on a change of the magnitude of the light emitting current transmitted to the light emitting diode LED. The driving voltage lineapplies the driving voltage ELVDD. The first initialization voltage linetransmits the first initialization voltage Vinit, and the second initialization voltage linetransmits the second initialization voltage AVinit. The common voltage lineapplies a common voltage ELVSS to the cathode of the light emitting diode LED. In the present exemplary embodiment, the voltages applied to the driving voltage line, the first and second initialization voltage linesand, and the common voltage linemay be a constant voltage, respectively.

1 1 1 172 5 1 2 1 6 1 3 3 1 1 1 1 1 3 1 1 3 1 4 The driving transistor (T: also called a first transistor) is a p-type transistor and has a silicon semiconductor as a semiconductor layer. It is a transistor that adjusts the magnitude of the light emitting current output to the anode of the light emitting diode LED according to the magnitude of the voltage (i.e., the voltage stored in the storage capacitor Cst) of the gate electrode of the driving transistor T. Since the brightness of the light emitting diode LED is adjusted according to the magnitude of the light emitting current output to the anode of the light emitting diode LED, the light emitting luminance of the light emitting diode LED may be adjusted according to the data voltage DATA applied to the pixel. For this purpose, the first electrode of the driving transistor Tis disposed to receive the driving voltage ELVDD and is connected to the driving voltage linethrough the fifth transistor T. Also, the first electrode of the driving transistor Tis connected to the second electrode of the second transistor T, thereby also receiving the data voltage DATA. Meanwhile, the second electrode of the driving transistor Toutputs the light emitting current to the light emitting diode LED and is connected to the anode of the light emitting diode LED via the sixth transistor T(hereinafter referred to as an output control transistor). In addition, the second electrode of the driving transistor Tis also connected to the third transistor T, and the data voltage DATA applied to the first electrode is transferred to the third transistor T. Meanwhile, the gate electrode of the driving transistor Tis connected to one electrode (hereinafter referred to as ‘a second storage electrode’) of the storage capacitor Cst. The voltage of the gate electrode of the driving transistor Tchanges according to the voltage stored in the storage capacitor Cst, and accordingly, the light emitting current output by the driving transistor Tis changed. The storage capacitor Cst serves to keep the voltage of the gate electrode of the driving transistor Tconstant for one frame. Meanwhile, the gate electrode of the driving transistor Tmay also be connected to the third transistor Tso that the data voltage DATA applied to the first electrode of the driving transistor Tmay be transmitted to the gate electrode of the driving transistor Tthrough the third transistor T. Meanwhile, the gate electrode of the driving transistor Tis also connected to the fourth transistor Tand may be initialized by receiving the first initialization voltage Vinit.

2 2 2 151 2 171 2 1 2 151 171 1 1 boost The second transistor Tis a p-type transistor and has a silicon semiconductor as a semiconductor layer. The second transistor Tis a transistor that receives the data voltage DATA into the pixel. The gate electrode of the second transistor Tis connected to the first scan lineand one electrode (hereinafter referred to as ‘a lower boost electrode’) of the boost capacitor C. The first electrode of the second transistor Tis connected to the data line. The second electrode of the second transistor Tis connected to the first electrode of the driving transistor T. When the second transistor Tis turned on by the negative voltage of the first scan signal GW transmitted through the first scan line, the data voltage DATA transferred through the data lineis transmitted to the first electrode of the driving transistor T, and finally the data voltage DATA is transmitted to the gate electrode of the driving transistor Tand stored in the storage capacitor Cst.

3 3 1 1 1 3 152 3 1 3 1 3 152 1 1 1 1 1 1 boost The third transistor Tis an n-type transistor and has an oxide semiconductor as a semiconductor layer. The third transistor Telectrically connects the second electrode of the driving transistor Tand the gate electrode of the driving transistor T. As a result, it is a transistor that allows the data voltage DATA to be compensated by the threshold voltage of the driving transistor Tand then stored in the second storage electrode of the storage capacitor Cst. The gate electrode of the third transistor Tis connected to the second scan line, and the first electrode of the third transistor Tis connected to the second electrode of the driving transistor T. The second electrode of the third transistor Tis connected to the second storage electrode of the storage capacitor Cst, the gate electrode of the driving transistor T, and the other electrode (hereinafter referred to as ‘an upper boost electrode’) of the boost capacitor C. The third transistor Tis turned on by the positive voltage of the second scan signal GC transmitted through the second scan lineto connect the gate electrode of the driving transistor Tand the second electrode of the driving transistor Tand to transmit the voltage applied to the gate electrode of the driving transistor Tto the second storage electrode of the storage capacitor Cst to be stored to the storage capacitor Cst. At this time, the voltage stored in the storage capacitor Cst is stored in a state in which the voltage of the gate electrode of the driving transistor Twhen the driving transistor Tis turned off is stored, so that the threshold voltage Vth of the driving transistor Tis compensated.

4 4 1 4 153 4 127 4 3 1 4 153 1 boost boost The fourth transistor Tis an n-type transistor and has an oxide semiconductor as a semiconductor layer. The fourth transistor Tinitializes the gate electrode of the driving transistor Tand the second storage electrode of the storage capacitor Cst. The gate electrode of the fourth transistor Tis connected to the initialization control line, and the first electrode of the fourth transistor Tis connected to the first initialization voltage line. The second electrode of the fourth transistor Tis connected to the second electrode of the third transistor T, the second storage electrode of the storage capacitor Cst, the gate electrode of the driving transistor T, and the upper boost electrode of the boost capacitor C. The fourth transistor Tis turned on by the positive voltage of the initialization control signal GI received through the initialization control line, and in this case, the first initialization voltage Vinit is transmitted to the gate electrode of the driving transistor T, the second storage electrode of the storage capacitor Cst, and the upper boost electrode of the boost capacitor Cto be initialized.

5 6 The fifth transistor Tand the sixth transistor Tare p-type transistors, and have a silicon semiconductor as a semiconductor layer.

5 1 5 155 5 172 5 1 The fifth transistor Tserves to transmit the driving voltage ELVDD to the driving transistor T. The gate electrode of the fifth transistor Tis connected to the light emitting control line, the first electrode of the fifth transistor Tis connected to the driving voltage line, and the second electrode of the fifth transistor Tis connected to the first electrode of the driving transistor T.

6 1 6 155 6 1 6 The sixth transistor Tserves to transmit the light emitting current output from the driving transistor Tto the light emitting diode LED. The gate electrode of the sixth transistor Tis connected to the light emitting control line, the first electrode of the sixth transistor Tis connected to the second electrode of the driving transistor T, and the second electrode of the sixth transistor Tis connected to the anode of the light emitting diode LED.

7 7 7 151 7 7 128 7 151 7 151 128 127 The seventh transistor Tis a p-type or n-type transistor, and the semiconductor layer has a silicon semiconductor or an oxide semiconductor. The seventh transistor Tinitializes the anode of the light emitting diode LED. The gate electrode of the seventh transistor Tis connected to first scan line, the first electrode of the seventh transistor Tis connected to the anode of the light emitting diode LED, and the second electrode of the seventh transistor Tis connected to the second initialization voltage line. When the seventh transistor Tis turned on by the negative voltage of the first scan line, the second initialization voltage AVinit is applied to the anode of the light emitting diode LED to be initialized. On the other hand, the gate electrode of the seventh transistor Tmay be connected to a separate bypass control line and may be controlled by the first scan lineand separate wiring. Also, according to an embodiment, the second initialization voltage lineto which the second initialization voltage AVinit is applied may be the same as the first initialization voltage lineto which the first initialization voltage Vinit is applied.

1 7 boost boost Although it has been described that one pixel PX includes seven transistors Tto Tand two capacitors (the storage capacitor Cst, the boost capacitor C), the present invention is not limited thereto, and the boost capacitor C) may be excluded according to an embodiment. Also, although the embodiment in which the third transistor and the fourth transistor are formed of the n-type transistor is described, only one of them may be formed as an n-type transistor or the other transistor may be formed as an n-type transistor.

18 FIG. In the above, the circuit structure of the pixel formed in the display area DA was described with reference to.

19 FIG. Hereinafter, the details of the planar structure of the pixels formed in the display area DA and the stacked structure of the photosensor area OPS are described with reference to.

19 FIG. is a cross-sectional view of a light emitting display device according to an embodiment.

19 FIG. 2 additionally shows the stacked structure of the photosensor area OPS of the first element area DAas well as the stacked structure of the pixel of the display area DA.

1 2 19 FIG. First, the detailed stacked structure of the pixel formed in the first display area DAand the first element area DAis described with reference to.

110 19 FIG. The substratemay include a material that does not bend due to a rigid characteristic such as glass, or a flexible material that may be bent, such as plastic or polyimide.shows the flexible substrate and a structure in which polyimide and a barrier layer positioned thereon and formed of an inorganic insulating material are double formed.

110 1 111 111 A lower shielding layer BML is positioned on the substrate, and the lower shielding layer BML is disposed at the area overlapping a channel of a first semiconductor layer ACT(hereinafter referred to as a polycrystalline semiconductor layer). The lower shielding layer BML is also called a lower shielding layer, and may include a metal or a metal alloy such as copper (Cu), molybdenum (Mo), aluminum (Al), titanium (Ti), etc., and may be composed of a single layer or multiple layers. On the lower shielding layer BML, a buffer layercovering it may be positioned, and the buffer layerserves to block penetration of impurity elements into the first semiconductor layer, and may be an inorganic insulating layer including a silicon oxide (SiOx), a silicon nitride (SiNx), or a silicon oxynitride (SiONx).

1 111 1 A first semiconductor layer ACTis positioned on the buffer layer. The first semiconductor layer ACTmay be formed of a polycrystalline semiconductor (P—Si) and includes a channel area, and a first area and a second area positioned on both sides of the channel area.

141 1 1 141 The first gate insulating layermay be positioned to cover the first semiconductor layer ACTor to overlap only the channel area of the first semiconductor layer ACT. The first gate insulating layermay be an inorganic insulating layer including a silicon oxide (SiOx), a silicon nitride (SiNx), a silicon oxynitride (SiONx), or the like.

1 141 1 1 1 1 A first gate conductive layer GATis positioned on the first gate insulating layer, and the first gate conductive layer GATincludes a gate electrode of a transistor (LTPS TFT) including a polycrystalline semiconductor. The first gate conductive layer GATmay include a metal such as copper (Cu), molybdenum (Mo), aluminum (Al), titanium (Ti), or a metal alloy thereof, and may be configured of a single layer or multiple layers. An area overlapping the gate electrode on a plane among the first semiconductor layer ACTmay be a channel area. Also, in the present embodiment, the gate electrode positioned on the first gate conductive layer GATserves as one electrode of the storage capacitor.

1 142 142 The first gate conductive layer GATis covered by a second gate insulating layer, and the second gate insulating layermay be an inorganic insulating layer including a silicon oxide (SiOx), a silicon nitride (SiNx), a silicon oxynitride (SiONx), or the like.

2 142 2 2 2 A second gate conductive layer GATis positioned on the second gate insulating layer, and the second gate conductive layer GATmay include a first storage electrode overlapping the gate electrode to configure the storage capacitor Cst and a lower shielding layer BML for the oxide semiconductor transistor positioned under the oxide semiconductor layer ACT. The second gate conductive layer GATmay include a metal or a metal alloy such as copper (Cu), molybdenum (Mo), aluminum (Al), or titanium (Ti), and may be configured as a single layer or multiple layers.

2 161 161 The second gate conductive layer GATis covered by the first interlayer insulating layer, and the first interlayer insulating layermay include an inorganic insulating layer including a silicon oxide (SiOx), a silicon nitride (SiNx), a silicon oxynitride (SiONx), etc.

2 161 2 An oxide semiconductor layer ACTis positioned on the first interlayer insulating layer, and the oxide semiconductor layer ACTmay include a material such as IGZO, and includes a channel area, and a first area and a second area positioned on both sides of the channel area.

2 143 143 The oxide semiconductor layer ACTis covered by the third gate insulating layer, and the third gate insulating layermay include an inorganic insulating layer including a silicon oxide (SiOx), a silicon nitride (SiNx), a silicon oxynitride (SiONx), etc.

143 161 2 The third gate insulating layerand the first interlayer insulating layermay have an opening overlapping a part of the lower shielding layer for the oxide semiconductor transistor (the oxide TFT) among the second gate conductive layer GAT.

3 143 3 3 A third gate conductive layer GATis positioned on the third gate insulating layer, and the third gate conductive layer GATincludes a gate electrode of the oxide semiconductor transistor (the oxide TFT) and a connecting part connected to the lower shielding layer for the oxide semiconductor transistor. The third gate conductive layer GATmay include a metal or a metal alloy such as copper (Cu), molybdenum (Mo), aluminum (Al), or titanium (Ti), and may be composed of a single layer or multiple layers.

3 162 162 The third gate conductive layer GATis covered by a second interlayer insulating layer, and the second interlayer insulating layermay include an inorganic insulating layer including a silicon oxide (SiOx), a silicon nitride (SiNx), a silicon oxynitride (SiONx), etc., and according to an embodiment, it may include an organic material.

162 1 2 The second interlayer insulating layerand the insulating layer positioned thereunder may include an opening overlapping the first semiconductor layer ACTand the oxide semiconductor layer ACT.

1 162 1 1 2 1 A first data conductive layer SDis positioned on the second interlayer insulating layer, and the first data conductive layer SDmay play a role of providing the voltage or the current to the first semiconductor layer ACTand the oxide semiconductor layer ACTor transmitting the voltage or the current to another element by including the connecting part. The first data conductive layer SDmay include a metal such as aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), or a metal alloy, and may be configured of a single layer or multiple layers.

181 1 181 A first organic layeris covered by the first data conductive layer SD. The first organic layermay be an organic insulator including an organic material, and the organic material may include at least one material selected from the group consisting of polyimide, polyamide, acryl resin, benzocyclobutene, and phenol resin.

181 1 2 181 2 1 2 The first organic layermay include an opening overlapping the first data conductive layer SD, and the second data conductive layer SDis positioned on the first organic layer. The second data conductive layer SDmay be connected to the first data conductive layer SDthrough the opening. The second data conductive layer SDmay include a metal or a metal alloy such as aluminum (Al), copper (Cu), molybdenum (Mo), or titanium (Ti), and may be configured as a single layer or multiple layers.

2 182 183 182 183 183 183 The second data conductive layer SDis covered by a second organic layerand a third organic layer. The second organic layerand the third organic layermay be organic insulators, and may include at least one material selected from the group consisting of polyimide, polyamide, acryl resin, benzocyclobutene, and phenol resin. According to an embodiment, the third organic layermay be omitted. However, clue to the third organic layer, the anode (Anode) may have a more flat characteristic.

183 2 183 The anode (Anode) may be positioned on the third organic layer, and has a structure connected to the second data conductive layer SDthrough the opening positioned on the third organic layer. The anode (Anode) may be composed of a single layer including a transparent conductive oxide film and a metal material or a multilayer including these. The transparent conductive oxide film may include Indium Tin Oxide (ITO), poly-ITO, Iridium Zinc Oxide (IZO), Iridium Gallium Zinc Oxide (IGZO) and Iridium Tin Zinc Oxide (ITZO), and the metal material may include silver (Ag), molybdenum (Mo), copper (Cu), gold (Au), and aluminum (Al).

380 380 380 On the anode (Anode), a black pixel defining layerhaving an opening OP that overlaps with at least part of the anode (Anode) and covering other parts of the anode (Anode) is positioned. The black pixel defining layermay further include a light blocking material in addition to the organic insulating material. The light blocking material includes carbon black, carbon nanotubes, a resin or paste containing a black dye, metal particles, such as nickel, aluminum, molybdenum, and alloys thereof, metal oxide particles (e.g., chromium nitride), etc. The black pixel defining layermay be formed of an organic material having a negative type of black color. Because the negative type of organic material is used, it may have a characteristic that the part covered by the mask is removed.

380 230 An opening OP is formed in the black pixel defining layer, and the emission layer EL is positioned in the opening OP. The emission layer EL may be formed of an organic light emitting material, and the adjacent emission layers EL may display different colors. On the other hand, according to an embodiment, each of the emission layers EL may display light of the same color due to the color filterpositioned thereon.

385 380 385 385 385 1 385 2 385 A spaceris formed on the black pixel defining layer. The spacermay be formed as a structure having a step difference, and the spacerincludes a first portion-having a high height and positioned in a narrow area and a second portion-having a low height and positioned in a wide area. The spacermay be formed of photosensitive polyimide (PSPI).

385 380 A functional layer FL is positioned on the emission layer EL, the spacer, and the exposed black pixel defining layer, and the functional layer FL may be formed on the entire surface of the light emitting display device DP. The functional layer FL may include an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer, and the functional layer FL may be positioned above and below the emission layer EML. That is, the hole injection layer, the hole transport layer, the emission layer EML, the electron transport layer, the electron injection layer, and the cathode (Cathode) are sequentially positioned on the anode (Anode), so that the hole injection layer and the hole transport layer among the functional layer FL may be positioned under the emission layers EML, and the electron transport layer and the electron injection layer may be placed on the emission layer EML. According to an embodiment, the functional layer FL may also be positioned in the light transmitting area.

The cathode (Cathode) may be formed of a light-transmitting electrode or a reflecting electrode. According to an embodiment, the cathode may be a transparent or semi-transparent electrode, and may be formed of a metal thin film having a small work function, including lithium (Li), calcium (Ca), lithium fluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum (Al), silver (Ag), magnesium (Mg), and a compound thereof. In addition, a transparent conductive oxide (TCO) such as Iridium Tin Oxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), or indium oxide (In2O3) may be further disposed on the metal thin film. The cathode may be integrally formed over the entire surface in the light emitting display panel DP except for the light transmitting area.

400 400 400 400 An encapsulation layeris positioned on the cathode (Cathode). The encapsulation layermay include at least one inorganic layer and at least one organic layer, and may have a triple layer structure including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer. The encapsulation layermay be to protect the emission layer EML formed of an organic material from moisture or oxygen that may be inflowed from the outside. According to an embodiment, the encapsulation layermay include a structure in which an inorganic layer and an organic layer are sequentially further stacked.

501 510 511 540 541 400 540 541 501 541 510 541 540 511 540 220 511 230 230 230 Detecting insulating layers,, andand a plurality of detecting electrodesandare positioned on the encapsulation layerfor touch sensing. Here, the detecting electrodesandmay include a metal or a metal alloy such as aluminum (Al), copper (Cu), silver (Ag), gold (Au), molybdenum (Mo), titanium (Ti), or tantalum (Ta), and may be composed of a single layer or multiple layers. In the present embodiment, a lower detecting insulating layeris positioned under the lower detecting electrode, a middle detecting insulating layeris positioned between the lower detecting electrodeand the upper detecting electrode, and an upper detecting insulating layeris positioned between the upper detecting electrodeand the light blocking layer. The upper detecting insulating layermay also be positioned under the color filtersR,G, andB.

220 230 540 541 220 230 17 FIG. 5 FIG. 15 FIG. 17 FIG. The light blocking layerand the color filterare positioned on the upper detecting electrodesand.briefly shows the structure of the light blocking layerand the color filter, but they may have one of the structures described intoand.

220 380 230 220 220 230 220 230 6 FIG. That is, the light blocking layerhas an opening OPBM corresponding to the opening OP of the black pixel defining layer, and each color filteris filled in the opening OPBM. Among them, one color filter has an overlapping part overlapping more with the light blocking layer, and may further include an opening (referring to OPCrg, OPCrb of) corresponding to the opening OPBM of the light blocking layercorresponding to the color filter of another color. As a result, the color filters of one color are all positioned on the light blocking layer. Here, one of the color filtersmay be stacked over the entire area and an opening may be formed using a mask, and the remaining color filters may be formed in the opening of the color filter or the light blocking layerby an inkjet method. According to an embodiment, the color filtermay be replaced with a color conversion layer or may further include a color conversion layer. The color conversion layer may include quantum dots.

550 230 230 550 A planarization layercovering the color filteris positioned on the color filter. The planarization layeris for planarizing the upper surface of the light emitting display device, and may be a transparent organic insulator including at least one material selected from the group consisting of polyimide, polyamide, acryl resin, benzocyclobutene, and phenol resin.

550 230 550 According to an embodiment, a low refractive layer and an additional planarization layer may be further positioned on the planarization layerto improve front visibility and light output efficiency of the display device. Light may be emitted while being refracted to the front by the low refractive layer and the additional planarization layer having a high refractive characteristic. In this case, the low refractive layer and the additional planarization layer may be positioned directly on the color filterwhile the planarization layeris omitted according to an embodiment.

550 380 220 In the present embodiment, a polarizer on the planarization layeris not included. That is, the polarizer may serve to prevent display deterioration that the user recognizes as the external light is incident and reflected from the anode and the like. However, in the present embodiment, the black pixel defining layercovers the side of the anode (Anode) to reduce the degree of the reflection from the anode (Anode), and the light blocking layeris also formed to reduce the incidence of light, thereby the structure for preventing the deterioration of the display quality due to the reflection is already included. Therefore, there is no need to separately form the polarizer on the front of the light emitting display device DP.

19 FIG. Hereinafter, the stacked structure of the photosensor area OPS is described with reference to.

380 220 230 The photosensor area OPS consists of only a transparent layer to allow light to pass through, and there is no conductive layer or semiconductor layer positioned, and an opening (hereinafter also referred to as an additional opening) may be formed at the position corresponding to the photosensor area OPS in the black pixel defining layer, the light blocking layer, and the color filterto have a structure that does not block light.

19 FIG. Specifically, based on, the stacked structure of the photosensor area OPS according to an embodiment is as follows.

111 110 141 142 142 161 143 162 A buffer layerof an inorganic insulating layer is positioned on the substrate, and a first gate insulating layerand a second gate insulating layerof an inorganic insulating layer are sequentially positioned thereon. Also, on the second gate insulating layer, a first interlayer insulating layer, a third gate insulating layer, and a second interlayer insulating layerof an inorganic insulating layer are sequentially stacked.

162 181 182 183 On the second interlayer insulating layer, a first organic layer, a second organic layer, and a third organic layerof an organic insulator are sequentially stacked.

183 A functional layer FL may be positioned on the third organic layer, and a cathode (Cathode) may be positioned thereon.

400 501 510 511 400 401 402 403 501 510 511 5 FIG. An encapsulation layeris positioned on the cathode (Cathode), and the detecting insulating layers,, andare sequentially positioned thereon. The encapsulation layer, as shown in, may have a triple layer structure including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer. In addition, the detecting insulating layers,, andmay all be inorganic insulating layers.

17 FIG. 220 1 1 230 400 501 510 511 1 380 183 Here, referring to, a light blocking layerand additional openings OPBM-and OPC-of the red color filterR are respectively disposed on the encapsulation layerand under the detecting insulating layers,, and. In addition, an additional opening OP-of the black pixel defining layeris positioned between the third organic layerand the functional layer FL.

550 501 510 511 A planarization layermay be positioned on the detecting insulating layers,, and.

1 1 2 2 3 1 2 540 541 In the above photosensor area OPS, the metal layer BML, the first semiconductor layer ACT, the first gate conductive layer GAT, the second gate conductive layer GAT, the oxide semiconductor layer ACT, the third gate conductive layer GAT, the first data conductive layer SD, the second data conductive layer SD, and the anode (Anode) are not positioned. Also, the emission layer EML, and the detecting electrodesandare not formed.

17 FIG. 380 220 230 380 220 230 Additionally, in the photosensor area OPS, an additional opening (referring to) is formed in the black pixel defining layer, the light blocking layer, and the color filter, and the black pixel defining layer, the light blocking layer, and the color filterare not formed therein.

In the above, the embodiment in which a total of three organic layers are formed, and the opening for an anode connection is formed in the second organic layer and the third organic layer, is described. However, the organic layer may be formed of at least two, and in this case, the opening for the anode connection may be positioned in the upper organic layer positioned away from the substrate, and a lower organic layer opening may be positioned in the lower organic layer.

2 19 FIG. In some embodiments, the light emitting display device may not include the first element area DAincluding the light transmitting area, and the photosensor area OPS may not be formed. In the light emitting display device of such an embodiment, the single layer structure of the pixels corresponding to the display area DA ofmay be maintained as it is.

220 A reflection adjusting layer may be disposed on the light blocking layer. The reflection adjusting layer may selectively absorb light of a wavelength of a partial band among light reflected inside the display device or light incident outside the display device. The reflection adjusting layer may fill the opening OP.

For example, the reflection adjusting layer absorbs a first wavelength region of 490 nm to 505 nm and a second wavelength region of 585 nm to 600 nm, and thus light transmittance in the first wavelength region and second wavelength region may be 40% or less. The reflection adjusting layer may absorb light of a wavelength outside the emission wavelength range of red, green, or blue emitted from the light emitting diode ED. As described, the reflection adjusting layer absorbs light of a wavelength that does not belong to a wavelength range of red, green, or blue emitted from the light emitting diode, thereby preventing or minimizing the reduction in luminance of the display device and simultaneously preventing or minimizing the deterioration of the luminous efficiency and improving visibility of the display device.

In the embodiment, the reflection adjusting layer may be provided as an organic material layer including a dye, a pigment, or combination thereof. The reflection adjusting layer may contain a tetraazaporphyrin (TAP)-based compound, a porphyrin-based compound, a metal porphyrin-based compound, an oxazine-based compound, and a squarylium-based compound, a triarylmethane compound, a polymethine compound, an anthraquinone compound, a phthalocyanine compound, an azo compound, a perylene compound, a xanthene-based compound, a diammonium-based compound, a dipyrromethene-based compound, a cyanine-based compound, and a combination thereof.

In the embodiment, the reflection adjusting layer may have transmittance of about 64% to 72%. The transmittance of the reflection adjusting layer may be adjusted according to the content of the pigment and/or dye included in the reflection adjusting layer.

2 400 According to embodiments, the reflection adjusting layer may not be disposed in the first element area DA. In addition, an embodiment including the reflection adjusting layer may further include a capping layer and a low reflection layer disposed between the cathode (Cathode) and the encapsulation layer.

The capping layer may serve to improve the luminous efficiency of the light emitting diode ED by the principle of constructive interference. The capping layer may include, for example, a material having a refractive index of 1.6 or more for light having a wavelength of 589 nm.

The capping layer may be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or a composite capping layer including an organic material and an inorganic material. For example, the capping layer may contain a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, alkaline earth metal complexes, or any combination thereof. The carbocyclic compounds, the heterocyclic compounds, and the amine group-containing compounds may be optionally substituted with substituents including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.

110 A low reflection layer may be disposed on the capping layer. The low reflective layer may overlap a front surface of the substrate.

2 2 2 2 5 2 2 3 2 3 2 3 x 2 2 The low reflective layer may include an inorganic material having low reflectance, and in an embodiment, it may include a metal or metal oxide. When the low reflective layer contains a metal, it may include, for example, ytterbium (Yb), bismuth (Bi), cobalt (Co), molybdenum (Mo), titanium (Ti), zirconium (Zr), aluminum (Al), chromium (Cr), niobium (Nb), platinum (Pt), tungsten (W), indium (In), tin (Sn), iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn), and it may include zinc (Zn), germanium (Ge), silver (Ag), magnesium (Mg), gold (Au), copper (Cu), calcium (Ca), or a combination thereof. In addition, when the low reflective layer contains a metal oxide, it may include, for example, SiO, TiO, ZrO, TaO, HfO, AlO, ZnO, YO, BeO, MgO, PbO, WO, SiN, LiF, CaF, MgF, CdS, or a combination thereof.

In the embodiment, an absorption coefficient (k) of the inorganic material included in the low reflective layer may be 4.0 or less and 0.5 or more (0.5 k 4.0). In addition, the inorganic material included in the low reflective layer may have a refractive index (n) of 1 or more (n≥1.0).

The low reflective layer induces destructive interference between the light incident into the display device and the light reflected from the metal disposed under the low reflective layer, thereby reducing reflection of external light. Accordingly, the display quality and visibility of the display device can be improved by reducing the reflection of the external light of the display device through the low reflective layer.

According to embodiments, the capping layer may not be formed, and then the low reflective layer may be contact the cathode (Cathode) directly.

5 19 FIGS.and The encapsulation layer is disposed on the low reflective layer, other structures may be the same as.

While this disclosure has been described in connection with what is presently considered to be practical embodiments, it is to be understood that the inventive concept is not limited to the disclosed embodiments. On the contrary, it is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.