Spraying Device, Spraying System and Operating Method Thereof for Semiconductor Substrate

The present invention claims priority of the Taiwan Patent Application No. 113114696, filed on Apr. 19, 2024 with the Taiwan Intellectual Property Office, titled “Spraying device, spraying system and operating method thereof for semiconductor substrates”, which is incorporated by reference in the present invention in its entirety.

The present disclosure relates to a spraying device and a spraying system and an operating method thereof, and more particularly, to a spraying device and a spraying system for a semiconductor substrate and an operating method thereof.

In the prior art, when etching or cleaning a surface of a semiconductor substrate (such as a wafer, etc.), due to liquid remaining in nozzles and pipelines communicated with the nozzles, the liquid often remains after a predetermined etching time is exceeded. The residual liquid drips from the nozzles onto the semiconductor substrates cause a decrease in yield of the cleaning and etching process.

Generally speaking, after spraying etching liquid, deionized water or other solvents are sprayed immediately to remove the etching liquid on the surfaces of the semiconductor substrates to prevent the semiconductor substrates from being etched by too much of the etching liquid. However, since deionized water cannot be stored in the same container as the etching liquid (e.g., etching solution), nor can it be sprayed using the same pipeline. In practice, even if a process is set to spray deionized water immediately after etching, waiting time for the nozzle of the etching solution to remove and the nozzle of the deionized water to move to a specific position is still required. A portion of the etching solution still remains on the semiconductor substrate during this time, causing excessive etching of the semiconductor substrate or damage to the surface structure.

Furthermore, since deionized water and the etching solution are not sprayed from the same nozzle, or even on the same moving mechanism, when moving and replacing different nozzles, time differences and positioning deviations are prone to occur, resulting in a decrease in the overall controllability of the semiconductor manufacturing process. Furthermore, it requires a substantially amount of time and labor consumption for parameters adjustment and optimizing. In addition, the pipelines and the nozzles that have been immersed in high-concentration etching solutions for a long time are easily corroded or clogged by crystals formed by the chemical in the etching solution, further increasing problems of reduced process yield, increased consumables, and increased costs.

Therefore, a spraying device and a spraying system with a single fluid outlet, and an operating thereof are urgently needed in the technical field of the present invention, which can prevent the solution from dripping on the semiconductor substrate, prevent the solution from clogging and crystallizing in the pipeline, and can mix the chemical in the etching liquid in the pipeline.

The spraying device and spraying system and an operating method thereof for a semiconductor substrate provided by the present invention can complete cleaning of channels of the spraying device and cleaning of surface of the semiconductor substrate while the process is in progress through the arrangement design of a main channel and at least one branch channel, so as to prevent chemical in the etching liquid from forming crystals and causing corrosion of the channels or nozzles and require replacement.

In view of the above problems, in order to solve conventional problems such as excessive etching caused by chemical solution droplets on the surface of a semiconductor substrate, the present invention provides a spraying device for spraying at least one semiconductor substrate, the spraying device includes: a main channel including a main channel inlet and a main channel outlet for gas to flow from the main channel inlet to the main channel outlet; and at least one branch channel is communicated with the main channel, and each of the at least one branch channel has a branch channel inlet provided for fluid to flow from the branch channel inlet to the main channel outlet.

In a preferred embodiment, the at least one branch channel further includes: a first branch channel, having a first branch channel inlet; and a second branch channel, having a second branch channel inlet. The first branch channel is more adjacent to the main channel inlet of the main channel than the second branch channel, so that a first fluid flows into the first branch channel from the first branch channel inlet, then enters the main channel, and then after passing through the second branch channel, the first fluid flows to the main channel outlet.

In a preferred embodiment, the at least one branch channel further includes: a third branch channel, having a third branch channel inlet. The third branch channel is further away from the main channel inlet of the main channel than the first branch channel and the second branch channel, so that the first fluid flows into the first branch channel from the first branch channel inlet, then enters the main channel, and then after passing through the second branch channel and the third branch channel in sequence, the first fluid flows to the main channel outlet.

In a preferred embodiment, the second branch channel inlet is provided for a second fluid to flow from the second branch channel into the main channel, the third branch channel inlet is provided for a third fluid to flows from the third branch channel into the main channel, and the second fluid and the third fluid enter the main channel to be mixed and then flow to the main channel outlet.

In a preferred embodiment, the at least one branch channel further includes: a first branch channel, having a first branch channel inlet; and a second branch channel, having a second branch channel inlet. A distance between a position where the first branch channel is communicated with the main channel and the main channel inlet of the main channel, and a position where the second branch channel is communicated with the main channel and the main channel inlet of the main channel in a vertical direction are the same.

In a preferred embodiment, the main channel inlet and each of the branch channel inlet respectively have a valve to control opening or closing of the main channel and each of the at least one branch channel.

The present invention also provides a spraying system, which includes: at least one semiconductor substrate; the spraying device according any one of the above-mentioned embodiments disposed above the at least one semiconductor substrate, wherein the main channel inlet and the branch channel inlet of the spraying device each have a valve for controlling opening or closing of the main channel and the at least one branch channel; a plurality of flow controllers, respectively communicated with the valve of the main channel and the valve of each of the at least one branch channel, configured to monitor a flow rate of the gas or the fluid; and a control module, signally connected to the spraying device and the plurality of flow controllers, configured to adjust flow of the gas or the fluid, and the opening or closing of the main channel and each of the at least one branch channel.

In a preferred embodiment, the at least one branch channel further includes a first branch channel and a second branch channel, and the main channel, the first branch channel, and the second branch channel respectively have a main valve, a first valve, and a second valve. The first branch channel has a first branch channel inlet provided for a first fluid to flow from the first branch channel inlet to the main channel outlet, and the second branch channel has a second branch channel inlet provided for a second fluid to flow from the second branch channel inlet to the main channel outlet. The first branch channel is more adjacent to the main channel inlet of the main channel than the second branch channel, so that the first fluid flows into the first branch channel from the first branch channel inlet, then enters the main channel, and then after passing through the second branch channel, the first fluid flows to the main channel outlet. The main valve, the first valve, and the second valve are respectively provided to control opening or closing of the main channel, the first branch channel, and the second branch channel, and are respectively communicated with one of the plurality of flow controllers.

In a preferred embodiment, the at least one branch channel further includes: a third branch channel having a third branch channel inlet provided for a third fluid to flow from the third branch channel inlet to the main channel outlet. The first branch channel is more adjacent to the main channel inlet of the main channel than the second branch channel and the third branch channel, and the second branch channel is more adjacent to the main channel inlet than the third branch channel, so that the first fluid flows into the first branch channel from the first branch channel inlet, then enters the main channel, then after passing through the second branch channel and the third branch channel in sequence, the first fluid flows to the main channel outlet, and so that the second fluid flows into the second branch channel from the second branch channel inlet, then enters the main channel, and after passing through the third branch channel, the second fluid flows to the main channel outlet.

The present invention further provides an operating method of the spraying system according to any one of the above-mentioned embodiments for a semiconductor substrate. The operating method includes: opening the second valve, and spraying the second fluid on the at least one semiconductor substrate.

In a preferred embodiment, the operating method further includes: when detecting that an opening time of the second valve has reached a preset time value, closing the second valve, and opening the first valve.

In a preferred embodiment, the operating method further includes: opening the first valve, and spraying the first fluid on the at least one semiconductor substrate.

In a preferred embodiment, the operating method further includes: when detecting that an opening time of the first valve has reached a preset time value, closing the first valve, and opening the main valve.

In a preferred embodiment, the operating method further includes: opening the main valve, and spraying the gas on the at least one semiconductor substrate.

In a preferred embodiment, the operating method further includes: when detecting that an opening time of the main valve has reached a preset time value, closing the main valve.

In a preferred embodiment, the operating method further includes: opening the second valve and the third valve, mixing the second fluid and the third fluid in the main channel, and spraying the second fluid and the third fluid on the at least one semiconductor substrate.

In a preferred embodiment, the operating method further includes: when detecting that an opening time of the second valve and an opening time of the third valve has reached a preset time value, closing the second valve and the third valve, and opening the first valve.

Compared with the prior art, the spraying device, the spraying system and the operating method thereof for a semiconductor substrate provided by the present invention can reduce a risk of fluid still being in the channels causing a problem of dripping chemicals in the channels on a surface of the semiconductor substrate, when the valve opening time reaching the required preset time value during a semiconductor manufacturing process. Therefore, a yield or a productivity of an overall process (such as a cleaning efficiency after wafer etching) are enhanced, while reducing replacements of expensive consumables and reducing process costs.

Before describing at least one embodiment of the present disclosure in detail, it should be understood that the present disclosure is not necessarily limited to its application in the details illustrated in the following examples, for example, the number of embodiments, specific mixing ratio used thereof, etc. The present disclosure can be implemented or realized in other embodiments or in various ways.

The following will describe embodiments according to the present invention with reference to relevant drawings. For ease of understanding, the same components in the following embodiments are labeled with the same symbols.

Referring to,is a schematic perspective view of a spraying device for a semiconductor substrate according to an embodiment of the present invention, andis a schematic perspective view of the spraying device for a semiconductor substrate according to another embodiment of the present invention. The present invention provides a spraying devicefor spraying at least one semiconductor substrate(see, detailed below). in addition, “spraying” of the present invention can include cleaning, spraying, or vaporizing, the present invention is not limited to the foregoing examples or implementations, and can be adjusted according to actual process requirements.

As shown in, the spraying deviceincludes: a main channeland at least one branch channel P. The main channelhas a main channel inletI and a main channel outletO, provided for gas G to flow from the main channel inletI to the main channel outletO. At least one branch channel P is communicated with the main channel, and each of the at least one branch channel P has a channel inlet PI, PI, PI, PI provided for fluids F, F, F, Ffrom the branch channel inlet PI, PI, PI, PI to flow to the main channel outletO. The main channel outletO is configured to spray the gas G or the fluids F, F, F, Fon the at least one semiconductor substrate. Furthermore, the main channeland the at least one branch channel P are covered by a shell H on outside thereof to protect connections between the channels and to prevent the channels from damaging due to collision.

Reference is further made to. In the spraying deviceof the present invention, the at least one branch channel P further includes: a first branch channel Pand a second branch channel P. The first branch channel Phas a first branch channel inlet PI, and the second branch channel Phas a second branch channel inlet PI.

In one embodiment, the first branch channel inlet PI of the first branch channel Pis communicated with a deionized water supply source (not shown) provided for deionized water to flow from the first branch channel inlet PI to the main channel outlet isO. The second branch channel inlet PI of the second branch channel Pis communicated with a chemical solution supply source (not shown) provided for the chemical solution to flow from the second branch channel inlet PI to the main channel outlet. The main channel inletI of the main channelis communicated with a gas supply source (not shown) provided for the gas G to flow from the main channel inletI to the main channel outletO. Specifically, in an embodiment of the present invention, the deionized water can be reverse osmosis (RO) water, pure water, or other water that removes salts or anions and cations from water (deionized water, DI water); the chemical solution can be sulfuric acid, hydrochloric acid, nitric acid, hydrogen peroxide or other solvents; in addition, the gas G can be nitrogen or other noble gases, and the present invention is not limited to types of the chemical solution, the deionized water, or the gas G.

As shown in, in one embodiment, the first branch channel Pis more adjacent to the main channel inletI of the main channelthan the second branch channel P, so that a first fluid F(for example, deionized water) flows into the first branch channel Pfrom the first branch channel inlet PI, then enters the main channel, and then after passing through the second branch channel P, the first fluid Fflows to the main channel outletO. A second fluid F(for example, a chemical solution) flows into the second branch channel Pfrom the second branch channel inlet PI, then enters the main channel, and then flows to the main channel outletO. That is to say, the first branch channel Pis higher than the second branch channel Pin the vertical direction, and the first branch channel Pis located “upstream” of the second branch channel Pin the main channel. That is, the first branch channel Pand the second branch channel Pare communicated with the main channelin a “series” manner.

Referring to, and in conjunction with,is a schematic perspective view of a spraying device for a semiconductor substrate provided by yet another embodiment of the present invention. As shown in, in one embodiment, a distance between a position where the first branch channel Pis communicated with the main channeland the main channel inletI of the main channel, and a distance between a position where the second branch channel Pis communicated with the main channeland the main channel inletI of the main channelin the vertical direction is the same, so that the first fluid Fflows into the first branch channel Pfrom the first branch channel inlet PI, then enters the main channel, and then flow to the main channel outletO. Specifically, the first branch channel Pis communicated with the main channelat a first connection point C, the second branch channel Pis communicated with the main channelat a second connection point C, and the first connection point Cand the second connection point Care located on a same horizontal plane. That is to say, a vertical height of the first connection point Cand a vertical height the second connection point Care the same, and the first branch channel Pand the second branch channel Pare communicated with the main channelin a “parallel” manner, and has no such differences as being upstream or downstream. As shown in, it should be noted that the first connection point Cand the second connection point Care respectively virtual points. For example, a cross section of where the first branch channel Pis communicated with the main channeland a cross section of where the second branch channel Pis communicated with the main channelcan be a circle, and the first connection point Cand the second connection point Ccan be located at a center of the circle, respectively, but the invention is not limited thereto. In addition, the connection manner shown inis only an example. The first branch channel Pand the second branch channel Pare communicated with the main channelat an angle of 90 degrees. In other embodiments, the first branch channel Pand the second branch channel Pcan also be communicated with the main channelat an angle of 45 degrees, or at other angles, and the invention is not limited thereto.

That is to say, no matter whether the first branch channel Pand the second branch channel Pare communicated with the main channelin series or in parallel, the first fluid Fflows through everywhere that the second fluid Fflows through in the main channel. When the first fluid Fis deionized water, after the second fluid Fflows through both the main channeland the main channel outletO, the main channeland the main channel outletO are cleaned by the first fluid F, so that preventing the channels in the spraying deviceof the present invention from being clogged by crystals, or corroded due to long-term use of the chemical solution.

As shown in, in one embodiment, the at least one branch channel P further includes: a third branch channel P. The third branch channel Phas a third branch channel inlet PI. The first branch channel Pis more adjacent to the main channel inletI of the main channelthan the second branch channel Pand the third branch channel P. The second branch channel Pis more adjacent to the main channel inletI of the main channelthan the third branch channel P, so that the first fluid Fflows into the first branch channel Pfrom the first branch channel inlet PI, then enter the main channel, and then after passing through the second branch channel Pand the third branch channel Pin sequence, the first fluid Fflows to the main channel outletO, and so that the second fluid Fflows from the second branch channel inlet PI into the second branch channel Pand then enters the main channel, and then after passing through the third branch channel P, the second fluid Fflows to the main channel outletO. In other embodiments, the at least one branch channel P can further include a fourth branch channel P, and the fourth branch channel Phas a fourth branch channel inlet PI.

That is to say, a number of the at least one branch channel P can be plural, and as shown in, the first branch channel Pto the fourth branch channel Pcan be connected in series along the main channel, and more branch channels can also be added according to actual requirements. The remaining implementation of multiple branch channels have been described in the foregoing embodiments, and will not be reiterated herein. It should be noted that for the chemical solution and deionized water flowing into the first branch channel P, the second branch channel P, a third branch channel P, and a fourth branch channel Pcan be the same or different from each other, and can be adjusted according to actual requirements, the present invention is not limited thereto. In other embodiments, types of fluid can also be adjusted according to the number of channels.

Referring to, and referring to, which is a schematic view of a spraying system for a semiconductor substrate according to an embodiment of the present invention. In one embodiment, the main channeland each of the branch channels P, P, P, Prespectively have a valve VM, V, V, V, Vfor controlling opening and closing of the main channeland each of the at least one branch channel P. Specifically, the main channelhas a main valve VM, the first branch channel Phas a first valve V, the second branch channel Phas a second valve V, the third branch channel Phas a third valve V, and the fourth branch channel Phas a fourth valve V. It is worth mentioning that, for the sake of simplicity, the valves VM, V, V, V, and Vof the present invention are omitted in some drawings. In addition, the valves VM, V, V, V, Vcan be provided at any position that can control the main channeland the branch channels P, P, P, P, and can be, for example, pneumatic valves or solenoid valves, but the present invention is not limited thereto. In one embodiment, each of the branch channels P can be assembled in a modular manner. As long as connections between each of the branch channels P and the main channelafter being assembled is ensured, they can be connected in series, parallel, or a combination thereof, the present invention does not limit an actual arrangement of the assembly. In this way, the application flexibility of the spraying deviceof the present invention in different processes can be increased.

Referring to, which is a schematic perspective view of a spraying system for a semiconductor substrate according to an embodiment of the present invention. The present invention also provides a spraying system SYS, which includes: the at least one semiconductor substrate, the spraying deviceas described in any of the above-mentioned embodiments, a plurality of flow controllers, and a control module. The spraying deviceis disposed above the at least one semiconductor substrate. The plurality of flow controllersare respectively communicated with the main channeland the valves VM, V, V, V, Vof each of the at least one branch channel P, for monitoring the flow of the gas G or the fluids F, F, F, F. The control moduleis signally connected to the spraying deviceand the plurality of flow controllersto adjust the flow of the gas G or the fluids F, F, F, F, the main channel, and at least one flow controller, and the opening or closing of the main channeland the branch channel P. The control modulecan be a programmable logic controller (PLC), an industrial personal computer (IPC) or other control device or equipment with computing and control functions; the plurality of flow controllerscan be a mass flow controller (MFC), and the present invention is not limited thereto.

In one embodiment, the spraying system SYS of the present invention further includes: a semiconductor substrate carrier, at least one branch channel supply pipeline, and a main channel supply pipeline. The number of the at least one branch channel supply pipelinecan be determined according to the number of the at least one branch channel P of the spraying device. The at least one branch channel supply pipelinecan be respectively communicated with, for example, a liquid storage tank or other storage device, and the at least one branch channel supply pipelinecan be communicated with, for example, a liquid nitrogen pressurized storage tank, a gas bottle, or other storage devices, and the present invention is not limited thereto. The semiconductor substrate carrieris disposed below the at least one semiconductor substratefor carrying the at least one semiconductor substrate. The semiconductor substrate carrierincludes a carrying rotating diskand a carrying rotating shaft. The carrying rotating diskcan carry the at least one semiconductor substrate, and the carrying rotating shaft can be further connected to a driving device (not shown). Thereby, when the spraying devicein the spraying system SYS of the present invention is spraying, the semiconductor substrate carriercan be driven and rotated by the driving device, and the at least one semiconductor substratedisposed thereon can also be rotated. This allows the fluid and the gas sprayed on the at least one semiconductor substrateto be detached at a specific speed, thereby reducing the risk of over-etching and yield reduction.

It is worth mentioning that the aforementioned plurality of flow controllersare respectively connected to the valves VM, V, V, V, Vof the main channeland each of the at least one branch channel P, and the control moduleis signally connected to the spraying deviceand the plurality of flow controllers, and the plurality of flow controllersexecute instructions issued by the control, but the present invention does not limit the specific implementation of the above-mentioned connection. In addition, the preset state of each of the valves VM, V, V, V, Vof the present invention is closed, which ensures that every opening and closing of each of the valves VM, V, V, V, Vis controlled by the control module.

Next, specific embodiments of the spraying system SYS of the present invention for spraying gas and fluid will be described below. At the same time, the present invention further provides an operating method for a semiconductor substrate of the spraying system SYS as described in any of the above-mentioned embodiments. The operating method can be implemented by using the spraying system SYS of the present invention and controlling the at least one branch channel P and the main channelto spray gas and fluid. Regarding the spraying deviceand the operating method of the spraying system SYS of the present invention, the specific implementation of the spraying devicehas been described in previous embodiments, and therefore will not be reiterated herein.

In one embodiment, when the control modulecontrols the second valve Vto open, the second fluid Fflows from the second branch channel Pinto the main channeland flows to the main channel outletO before being sprayed on the at least one semiconductor substrate. When one of the plurality of flow controllersof the second valve Vdetects that an opening time of the second valve Vhas reached a preset time value, the control modulecontrols the second valve Vto close, and controls the first valve Vto open. Then, the first fluid Fflows from the first branch channel Pinto the main channel, then flows to the main channel outletO, and then sprays on the at least one semiconductor substrate.

When one of the plurality of flow controllersof the first valve Vdetects that an opening time of the first valve Vhas reached a preset time value, the control modulecontrols the first valve Vto close, and control the main valve VM to open. Then, the gas G flows into the main channelfrom the main channel inletI, then flows to the main channel outletO, and then sprays on the at least one semiconductor substrate. Then, when one of the plurality of flow controllersof the main valve VM detects that an opening time of the main valve VM has reached a preset time value, the control modulecontrols the main valve VM to close. Referring to, which is a schematic flowchart of an operating method of a spraying device for a semiconductor substrate according to an embodiment of the present invention. Specifically, in this embodiment, the operating method of the spraying devicecan include the following steps:

The steps of the aforementioned operating method can be performed through the spraying system SYS. Specifically, after spraying the chemical solution, deionized water and nitrogen can be sprayed sequentially to remove the chemical solution remaining in the main channeland remaining on the at least one semiconductor substrate. Other details about the spraying system SYS and the spraying devicehave been described in the previous embodiments, and will not be reiterated herein.

In another embodiment, when the control modulecontrols the second valve Vand the third valve Vto open, the second fluid Fflows from the second branch channel Pinto the main channeland the third fluid Fflows into the main channelfrom the third branch channel P. The second fluid Fand the third fluid Fare mixed in the main channeland flow to the main channel outletO, and then the second fluid Fand the third fluid Fspray on the at least one semiconductor substrateat the same time. When two of the plurality of flow controllersof the second valve Vand the third valve Vdetect that the opening time of the second valve Vand the third valve Vhas reached a preset time value, the control modulecontrols the second valve Vand the third valve Vto close, and controls the first valve Vto open. Then, the first fluid Fflows from the first branch channel Pinto the main channel, then flows to the main channel outletO, and then sprays on the at least one semiconductor substrate.

As mentioned above, when one of the plurality of flow controllersof the first valve Vdetects that the opening time of the first valve Vhas reached the preset time value, the control modulecontrols the first valve V to close and controls the main valve VM to open. Then, the gas G flows into the main channelfrom the main channel inletI, then flows to the main channel outletO, and then sprays on the at least one semiconductor substrate. Then, when one of the plurality of flow controllersof the main valve VM detects that the opening time of the main valve VM has reached the preset time value, the control modulecontrols the main valve VM to close.

Refer to, which is a schematic flowchart of an operating method of a spraying device for a semiconductor substrate according to another embodiment of the present invention. Specifically, in this embodiment, the operating method of the spraying devicecan include the following steps:

The steps of the aforementioned operating method can be performed through the spraying system SYS. Specifically, multiple fluids (i.e., chemical solutions) can be mixed in the main channelin advance, then sprayed, and then deionized water and nitrogen gas are then sprayed in sequence, so as to remove residual chemical solution in the main channeland on the at least one semiconductor substrate. Other details about the spraying system SYS and the spraying devicehave been described in the previous embodiments, and will not be reiterated herein.

Through the aforementioned embodiments, the spraying system SYS and the operating method of the spraying deviceof the present invention allows the spraying deviceto have a single main channeland a single main channel outletO, so that the gas G and the fluids F, F, FFcan spray on the at least one semiconductor substratefrom the main channel outletO uniformly without using different nozzles when spraying different gases or fluids, and can also reduce the time of unnecessary droplets of the chemical solution on the surface of the at least one semiconductor substrate, which can further enhance the overall yield of the semiconductor manufacturing process and reduce the risk of over-etching.

It is worth mentioning that the plurality of flow controllersin the embodiment of the present invention control the flow rate of the gas G and the fluids F, F, F, Fthrough the opening time of each of the valves VM, V, V, V, V. The plurality of flow controllerscan also be replaced by flow meters in other embodiments, or by timers on the premise that the fluid flow rate is known. In this way, the overall cost of the spraying system SYS of the present invention can be further reduced.