Polishing Apparatus

Semiconductor devices are formed on, in, and/or from semiconductor wafers, and are used in a multitude of electronic devices, such as mobile phones, laptops, desktops, tablets, watches, gaming systems, and various other industrial, commercial, and consumer electronics. One or more semiconductor fabrication processes are performed to form semiconductor devices on, in, and/or from a semiconductor wafer.

The following disclosure provides several different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to other element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation illustrated in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

The term “overlying” and/or the like may be used to describe one element or feature being vertically coincident with and at a higher elevation than another element or feature. For example, a first element overlies a second element if the first element is at a higher elevation than the second element and at least a portion of the first element is vertically coincident with at least a portion of the second element.

In some embodiments, a polishing apparatus includes a platen and a polishing pad coupled to the platen and configured to be rotated by the platen for polishing a semiconductor wafer. The polishing apparatus includes a first pad conditioner and a set of supplementary pad conditioners for conditioning the polishing pad. The set of supplementary pad conditioners include one or more supplementary pad conditioners to provide for improved control and/or customizability of a thickness profile of the polishing pad. In some embodiments, the set of supplementary pad conditioners are used to condition an edge portion of the polishing surface for improved edge thickness profile customizability of the polishing pad over a tool life of the polishing pad. In some embodiments, the set of supplementary pad conditioners provide for quicker pad conditioning of the polishing pad as compared to merely using the first pad conditioner to condition the polishing pad, thereby providing for at least one of reduced conditioning time required to prepare the polishing pad for use in polishing a semiconductor wafer, increased production capacity and/or throughput of the polishing apparatus, etc.

illustrates a polishing apparatusaccording to some embodiments. In some embodiments, the polishing apparatusis configured to perform a polishing process to polish a first semiconductor wafer. In some embodiments, the polishing process comprises a chemical mechanical planarization (CMP) process. In some embodiments, the polishing process is performed to homogenize and/or planarize a first surface of the first semiconductor waferusing a combination of chemical and mechanical forces. Embodiments are contemplated in which items different than a semiconductor wafer are polished using the polishing apparatus.

In some embodiments, the polishing apparatuscomprises at least one of a platenconfigured to support a polishing pad, the polishing padconfigured to be rotated by the platen, a wafer holderconfigured to support the first semiconductor waferin a polishing position relative to a polishing surfaceof the polishing padfor polishing of the first semiconductor wafer, a first pad conditionerconfigured to condition the polishing pad, a second pad conditionerconfigured to condition the polishing pad, or a slurry providerconfigured to provide a slurryto the polishing surfaceof the polishing pad.depicts the first semiconductor waferin the polishing position in accordance with some embodiments.

In some embodiments, the first semiconductor wafercomprises at least one of a substrate, a photomask, a semiconductor device, a dielectric layer, an epitaxial layer, a silicon-on-insulator (SOI) structure, a semiconductor layer, a conductive material layer, a die, etc. The first semiconductor wafercomprises at least one of silicon, germanium, carbide, arsenide, gallium, arsenic, phosphide, indium, antimonide, SiGe, SiC, GaAs, GaN, GaP, InGaP, InP, InAs, InSb, GaAsP, AllnAs, AlGaAs, GalnAs, GalnP, GalnAsP, or other suitable material. The first semiconductor wafercomprises at least one of monocrystalline silicon, crystalline silicon with a <> crystallographic orientation, crystalline silicon with a <> crystallographic orientation, crystalline silicon with a <> crystallographic orientation or other suitable material. Other structures and/or configurations of the first semiconductor waferare within the scope of the present disclosure. In some embodiments, the polishing process performed using the polishing apparatuspolishes the first surface of the first semiconductor wafercomprising at least one of a surface of the substrate, a surface of the photomask, a surface of the semiconductor device, a surface of the dielectric layer, a surface of the epitaxial layer, a surface of the SOI structure, a surface of the semiconductor layer, a surface of the conductive material layer, etc.

In some embodiments, the polishing padis configured to be driven by the platento rotate in a first rotational directionabout an axis. In some embodiments, the polishing padand the platenrotate synchronously in the first rotational directionabout the axis. In some embodiments, the platenis rotated using a first driving mechanism (not shown), such as a motor configured to drive a cylindercoupled to the platen, to rotate the polishing padabout the axis.

In some embodiments, the slurry providercomprises at least one of a slurry provider armor a slurry outlet. In some embodiments, the slurry outletcomprises a nozzle. In some embodiments, the slurry provider armcontrols a position of the slurry outletrelative to the polishing surfacewhile providing the slurryto the polishing surfaceof the polishing pad. In some embodiments, the slurry provideris connected to a reservoir (not shown) containing the slurry, which is conducted from the reservoir to the slurry outletfor application to the polishing pad. In some embodiments, the slurrycomprises a liquid comprising at least one of one or more polishing particles or one or more reactive chemicals.

The polishing padcomprises a porous material, such as porous polyurethane foam. Other materials of the polishing padare within the scope of the present disclosure. In some embodiments, a hardness of the polishing padis at least one of (i) harder than a first threshold hardness to allow at least one of the polishing pador the slurryto polish, such as mechanically and/or chemically polish, the first surface of the first semiconductor wafer, or (ii) softer than a second threshold hardness to mitigate scratching the first surface of the first semiconductor wafer. In some embodiments, the polishing padis removably coupled to the platen. In some embodiments, the polishing padis coupled to the platenusing an adhesive.

In some embodiments, the wafer holdercomprises at least one of a wafer holder head, a wafer holder cylinder, or a wafer holder unionbetween the wafer holder headand the wafer holder cylinder. In some embodiments, the wafer holderexerts a wafer polishing force onto the first semiconductor waferin a directiontowards the polishing pad. In some embodiments, the directionof the wafer polishing force is about parallel to the axis. In some embodiments, when the first semiconductor waferis in the polishing position relative to the polishing surface, the first semiconductor waferis in contact with the polishing surface. In some embodiments, the wafer holderis configured to rotate at least one of the wafer holder heador the first semiconductor waferin a second rotational direction. In some embodiments, the first rotational directionand the second rotational directionare the same rotational direction (e.g., clockwise or counterclockwise). Embodiments are contemplated in which the first rotational directionand the second rotational directionare different rotational directions (e.g., one is clockwise and the other is counterclockwise). In some embodiments, the first semiconductor waferis rotated by the wafer holderusing a second driving mechanism (not shown), such as a motor configured to drive the wafer holder cylinder.

In some embodiments, during the polishing process, at least one of (i) the slurry providerprovides the slurryto the polishing surface, (ii) the first semiconductor waferand the polishing padare rotated, or (iii) the slurryflows between the first semiconductor waferand the polishing padas the first semiconductor waferand the polishing padare rotated. In some embodiments, the polishing process polishes the first surface of the first semiconductor waferby at least one of (i) mechanical force between polishing particles of the slurryand the first surface of the first semiconductor wafer, (ii) mechanical force between the polishing padand the first surface of the first semiconductor wafer, or (iii) chemical reaction between reactive chemicals of the slurryand the first surface of the first semiconductor wafer.

In some embodiments, the first pad conditionercomprises at least one of a first pad conditioner arm, a first pad conditioner head, a first head carrierconfigured to hold the first pad conditioner head, or a first pad conditioner cylinder. In some embodiments, at least one of the first pad conditioner arm, the first pad conditioner head, or the first head carrieroverlie the polishing pad. In some embodiments, the first pad conditioner headis in contact with the polishing surfaceof the polishing pad. In some embodiments, the first pad conditioneris configured to rotate at least one of the first head carrieror the first pad conditioner headin a third rotational direction. In some embodiments, the first rotational directionand the third rotational directionare the same rotational direction (e.g., clockwise or counterclockwise). Embodiments are contemplated in which the first rotational directionand the third rotational directionare different rotational directions (e.g., one is clockwise and the other is counterclockwise). In some embodiments, the first pad conditioner headis rotated using a third driving mechanism (not shown) of the first pad conditioner, such as a motor configured to rotate the first head carrier. A first rotation speed with which the first pad conditioner headis rotated in the third rotational directionis between about zero rotations per minute to about 150 rotations per minute. Other values of the first rotation speed are within the scope of the present disclosure.

In some embodiments, the first pad conditioner headis configured to exert a first pad conditioning force onto the polishing pad. In some embodiments, the first pad conditioning force is exerted onto the polishing padin the directiontowards the polishing pad. In some embodiments, the first pad conditioning force is exerted onto the polishing padusing a fourth driving mechanism (not shown) of the first pad conditioner, such as a motor configured to move the first pad conditioner headin the (downwards) directionand/or a (upwards) direction opposite to the direction. The first pad conditioning force is at least one of (i) between about 0 newtons to about 150 newtons, (ii) between about 2 newtons to about 110 newtons, or (iii) between about 1 newton to about 100 newtons. In some embodiments, the first pad conditioning force corresponds to a down force of the first pad conditioner. Other values of the first pad conditioning force are within the scope of the present disclosure.

In some embodiments, the first pad conditioner armis configured to oscillate the first head carrierand the first pad conditioner head. In some embodiments, the first pad conditioner armoscillates the first head carrierand the first pad conditioner headusing a fifth driving mechanism (not shown) of the first pad conditioner, such as a motor coupled to the first pad conditioner cylinder.

illustrate top views of the polishing pad, in accordance with some embodiments.illustrates a top view of the first pad conditionerrelative to the polishing padwhen the first pad conditioner armis used to oscillate the first head carrierand the first pad conditioner headalong a first oscillation pathbetween a first positionrelative to the polishing surfaceand a second positionrelative to the polishing surface. In some embodiments, the first pad conditioner cylinderswings the first pad conditioner armto oscillate the first head carrierand the first pad conditioner headalong the first oscillation path. A first oscillation angleassociated with the first oscillation pathis between about 0 degrees to about 100 degrees. Other values of the first oscillation angleare within the scope of the present disclosure. In some embodiments, the first oscillation anglecorresponds to an angle between (i) the first pad conditioner armwhen the first head carrierand the first pad conditioner headhave the first positionrelative to the polishing surface, and (ii) the first pad conditioner armwhen the first head carrierand the first pad conditioner headhave the second positionrelative to the polishing surface. A first distancebetween an edgeof the polishing surfaceand a closest position, along the first oscillation path, of the first pad conditioner headis at least one of (i) at most about 200 millimeters, (ii) at most about 100 millimeters, (iii) at most about 50 millimeters, or (iv) at most about 30 millimeters. In some embodiments, the closest position of the first pad conditioner headto the edgeis at least one of the first position, the second position, or other position of the first pad conditioner headalong the first oscillation path. Other values of the first distanceare within the scope of the present disclosure. In some embodiments, along at least some of the first oscillation path, the first pad conditioner headoverlies the edgeof the polishing surfacesuch that the first distanceis zero millimeters.

In some embodiments, the first pad conditioner headperforms a first conditioning process to condition at least a first portion of the polishing surfaceof the polishing padin which at least one of (i) the first pad conditioner headis in contact with the polishing surfaceof the polishing pad, (ii) the first pad conditioner headis rotated in the third rotational direction, or (iii) the first pad conditioner headis oscillated along the first oscillation path. In some embodiments, the first conditioning process at least one of (i) planarizes at least some of the first portion of the polishing surfaceusing the first pad conditioner head, (ii) removes contaminants from the first portion of the polishing surfaceusing the first pad conditioner head, wherein the contaminants comprise at least one of byproducts and/or residue from a semiconductor wafer polished using the polishing pad, or byproducts and/or residue from the slurryprovided by the slurry provider, (iii) removes defects from the first portion of the polishing surfaceusing the first pad conditioner head, or (iv) removes a portion of the polishing padto adjust and/or reduce a thickness of at least a portion of the polishing pad.

illustrates the first portion (shown as a patterned region with reference number) of the polishing surfacein accordance with some embodiments in which the first portionconditioned by the first pad conditioner headis separated from the edgeof the polishing surfaceby a second distance. The second distanceis at least one of (i) at most about 200 millimeters, (ii) at most about 100 millimeters, (iii) at most about 50 millimeters, or (iv) at most about 30 millimeters. Other values of the second distanceare within the scope of the present disclosure. In some embodiments, the first portionof the polishing surfacecomprises the edgeof the polishing surface.illustrates the first portion (shown with reference number) of the polishing surfacein accordance with some embodiments in which the first portionof the polishing surfacecomprises the edgeof the polishing surface.

In some embodiments, the second pad conditionercomprises at least one of a second pad conditioner arm, a second pad conditioner head, a second head carrierconfigured to hold the second pad conditioner head, or a second pad conditioner cylinder. In some embodiments, at least one of the second pad conditioner arm, the second pad conditioner heador the second head carrieroverlie the polishing pad. In some embodiments, the second pad conditioner headis in contact with the polishing surfaceof the polishing pad. In some embodiments, the second pad conditioneris configured to rotate at least one of the second head carrieror the second pad conditioner headin a fourth rotational direction. In some embodiments, the third rotational directionand the fourth rotational directionare the same rotational direction (e.g., clockwise or counterclockwise). Embodiments are contemplated in which the third rotational directionand the fourth rotational directionare different rotational directions (e.g., one is clockwise and the other is counterclockwise). In some embodiments, the second pad conditioner headis rotated using a sixth driving mechanism (not shown) of the second pad conditioner, such as a motor configured to rotate the second head carrier. A second rotation speed with which the second pad conditioner headis rotated in the fourth rotational directionis between about zero rotations per minute to about 150 rotations per minute. Other values of the second rotation speed are within the scope of the present disclosure.

In some embodiments, the second pad conditioner headis configured to exert a second pad conditioning force onto the polishing pad. In some embodiments, the second pad conditioning force is exerted onto the polishing padin the directiontowards the polishing pad. In some embodiments, the second pad conditioning force is exerted onto the polishing padusing a seventh driving mechanism (not shown) of the second pad conditioner, such as a motor configured to move the second pad conditioner headin the (downwards) directionand/or a (upwards) direction opposite to the direction. The second pad conditioning force is at least one of (i) between about 0 newtons to about 150 newtons, (ii) between about 2 newtons to about 110 newtons, or (iii) between about 1 newton to about 100 newtons. Other values of the second pad conditioning force are within the scope of the present disclosure. In some embodiments, the second pad conditioning force corresponds to a down force of the second pad conditioner.

In some embodiments, the second pad conditioner armis configured to oscillate the second head carrierand the second pad conditioner head. In some embodiments, the second pad conditioner armoscillates the second head carrierand the second pad conditioner headusing an eighth driving mechanism (not shown) of the second pad conditioner, such as a motor coupled to the second pad conditioner cylinder. In some embodiments, the second pad conditioner armoscillates the second head carrierand the second pad conditioner headalong a second oscillation path (not shown) between a third position (not shown) relative to the polishing surfaceand a fourth position (not shown) relative to the polishing surface. In some embodiments, the second pad conditioner cylinderswings the second pad conditioner armto oscillate the second head carrierand the second pad conditioner headalong the second oscillation path. A second oscillation angle (not shown) associated with the second oscillation path is between about 0 degrees to about 100 degrees. Other values of the second oscillation angle are within the scope of the present disclosure. In some embodiments, the second oscillation angle corresponds to an angle between (i) the second pad conditioner armwhen the second head carrierand the second pad conditioner headhave the third position relative to the polishing surface, and (ii) the second pad conditioner armwhen the second head carrierand the second pad conditioner headhave the fourth position relative to the polishing surface.

In some embodiments, the second pad conditioner headperforms a second conditioning process to condition at least a second portion of the polishing surfaceof the polishing padin which at least one of (i) the second pad conditioner headis in contact with the polishing surfaceof the polishing pad, (ii) the second pad conditioner headis rotated in the fourth rotational direction, or (iii) the second pad conditioner headis oscillated along the second oscillation path. In some embodiments, the second conditioning process at least one of (i) planarizes at least some of the second portion of the polishing surfaceusing the second pad conditioner head, (ii) removes contaminants from the second portion of the polishing surfaceusing the second pad conditioner head, wherein the contaminants comprise at least one of byproducts and/or residue from a semiconductor wafer polished using the polishing pad, or byproducts and/or residue from the slurryprovided by the slurry provider, (iii) removes defects from the second portion of the polishing surfaceusing the first pad conditioner head, or (iv) removes a portion of the polishing padto adjust and/or reduce a thickness of at least a portion of the polishing pad.

In some embodiments, at least some of the first conditioning process performed using the first pad conditionerand at least some of the second conditioning process performed using the second pad conditionerare performed concurrently. In some embodiments, at least some of the first conditioning process performed using the first pad conditionerand at least some of the second conditioning process performed using the second pad conditionerare performed separately, such as during separate time periods.

In some embodiments, the second portion of the polishing surfaceconditioned using the second pad conditioneris different than first portionconditioned using the first pad conditioner. In some embodiments, the second portion and the first portionat least partially overlap. In some embodiments, the second portion is larger than the first portionat least partially overlap. In some embodiments, the second oscillation path of the second pad conditioneris different than the first oscillation pathsuch that at least one of (i) the second pad conditionerand the first pad conditionerdo not collide, or (ii) the second pad conditionerconditions a different, such as larger, portion of the polishing surface.illustrates the second portion (shown as a patterned region with reference number) of the polishing surfacerelative to an inner boundaryof the first portionshown as a dashed circle, in accordance with some embodiments. In some embodiments, the first portionis a sub-portion, of the second portion, that is proximal the edge(e.g., the second portion spans an entirety of the first portion).

illustrate side views of the first pad conditionerin accordance with some embodiments. The first pad conditioner headcomprises at least one of a diamond disk, a brush, a first pad, a sponge or other type of pad conditioner head.illustrates the first pad conditioneraccording to some embodiments in which the first pad conditioner headcomprises the diamond disk. In some embodiments, the diamond disk comprises a substrate, such as a metal disk, and one or more diamond abrasives embedded and/or encapsulated on the substrate. A lengthof the diamond disk is between about 30 millimeters to about 200 millimeters. Other values of the lengthare within the scope of the present disclosure. In some embodiments, the diamond disk contacts the polishing surfaceof the polishing padwhen the first pad conditioneris used to condition the polishing surface. A lengthof the first pad conditioneris between about 500 millimeters to about 750 millimeters. A heightof the first pad conditioneris between about 200 millimeters to about 600 millimeters. Other values of the lengthand the heightare within the scope of the present disclosure.

illustrates the first pad conditioneraccording to some embodiments in which the first pad conditioner headcomprises a brush, such as a brush disk. In some embodiments, the brush comprises at least one of bristles, wire, filaments, etc. A lengthof the brush is between about 30 millimeters to about 200 millimeters. Other values of the lengthare within the scope of the present disclosure. In some embodiments, the brush contacts the polishing surfaceof the polishing padwhen the first pad conditioneris used to condition the polishing surface.

illustrates the first pad conditioneraccording to some embodiments in which the first pad conditioner headcomprises the first pad. In some embodiments, the first pad comprises a hydrophilic pad, such as a hydrophilic soft pad having a hardness less than a third threshold hardness. In some embodiments, the hydrophilic soft pad comprises at least one of carbon such as a carbon additive, silicon such as a silicon additive, oxygen such as an oxide additive, or other suitable material. In some embodiments, a shore A hardness level of the hydrophilic soft pad is less than a first threshold shore A hardness level. In some embodiments, the first pad comprises a hydrophobic pad, such as a hydrophobic soft pad having a hardness less than a fourth threshold hardness. In some embodiments, the hydrophobic soft pad comprises at least one of polyurethane or other suitable material. In some embodiments, a shore A hardness level of the hydrophobic soft pad is less than a second threshold shore A hardness level. In some embodiments, the first pad comprises a hard pad having a hardness greater than a fifth threshold hardness. In some embodiments, a shore D hardness level of the hard pad is greater than a threshold shore D hardness level. A lengthof the first pad is between about 30 millimeters to about 200 millimeters. Other values of the lengthare within the scope of the present disclosure. In some embodiments, the first pad contacts the polishing surfaceof the polishing padwhen the first pad conditioneris used to condition the polishing surface.

illustrates the first pad conditioneraccording to some embodiments in which the first pad conditioner headcomprises the sponge. In some embodiments, the sponge comprises a porous structure. In some embodiments, the sponge comprises at least one of a polyvinyl alcohol (PVA) sponge or other type of sponge. In some embodiments, the PVA sponge is negatively charged. A lengthof the sponge is between about 30 millimeters to about 200 millimeters. Other values of the lengthare within the scope of the present disclosure. In some embodiments, the sponge contacts the polishing surfaceof the polishing padwhen the first pad conditioneris used to condition the polishing surface.

In some embodiments, the first pad conditioner headis replaced with a third pad conditioner head via a head replacement process. In some embodiments, the first pad conditioner headis of a first conditioner head type and the third pad conditioner head is of a third conditioner head type. In some embodiments, the first conditioner head type is different than the third conditioner head type, such as where (i) the first pad conditioner headcomprises the diamond disk, and the third pad conditioner head comprises at least one of the brush, the hydrophilic pad, the hydrophobic pad, the hard pad, or the sponge, (ii) the first pad conditioner headcomprises the brush, and the third pad conditioner head comprises at least one of the diamond disk, the hydrophilic pad, the hydrophobic pad, the hard pad, or the sponge, (iii) the first pad conditioner headcomprises the hydrophilic pad, and the third pad conditioner head comprises at least one of the diamond disk, the brush, the hydrophobic pad, the hard pad, or the sponge, (iv) the first pad conditioner headcomprises the hydrophobic pad, and the third pad conditioner head comprises at least one of the diamond disk, the brush, the hydrophilic pad, the hard pad, or the sponge, (v) the first pad conditioner headcomprises the hard pad, and the third pad conditioner head comprises at least one of the diamond disk, the brush, the hydrophilic pad, the hydrophobic pad, or the sponge, or (vi) the first pad conditioner headcomprises the sponge, and the third pad conditioner head comprises at least one of the diamond disk, the brush, the hydrophilic pad, the hydrophobic pad, or the hard pad. Embodiments are contemplated in which the first pad conditioner headis of the same conditioner head type as the third pad conditioner head, such as where at least one of (i) the first pad conditioner headcomprises a used and/or worn pad conditioner head and the third pad conditioner head comprises a new and/or replacement pad conditioner head, or (ii) the first pad conditioner headcomprises a pad conditioner head having a first size and the third pad conditioner head comprises a pad conditioner head having a second size.

In some embodiments, the first conditioning process comprises the head replacement process. In some embodiments, the first conditioning process comprises using two or more pad conditioner heads of two or more pad conditioner head types to condition the first portionof the polishing surface. In some embodiments, the first conditioning process comprises (i) conditioning at least the first portionof the polishing surfaceof the polishing padusing the first pad conditioner headof the first conditioner head type, (ii) performing the head replacement process to replace the first pad conditioner headwith the third pad conditioner head, and (iii) conditioning at least the first portionof the polishing surfaceof the polishing padusing the third pad conditioner head of the third conditioner head type.

illustrate side views of the first pad conditionerduring the head replacement process in accordance with some embodiments.illustrates separationof the first pad conditioner headfrom the first head carrier. In some embodiments, prior to separatingthe first pad conditioner headfrom the first head carrier, the first pad conditioner headis coupled to the first head carriervia at least one of a magnetic force between the first head carrierand the first pad conditioner head, an adhesive between the first head carrierand the first pad conditioner head, or an attachment mechanism of the first head carrier. In some embodiments, the first head carriercomprises at least one of magnetic material, polyetheretherketone material, stainless steel, or other material. In some embodiments, the first pad conditioner headis separatedfrom the first head carriervia at least one of pulling (by a person, a robotic arm, etc.) the first pad conditioner headfrom the first head carrieror decoupling (by a person, a robotic arm, etc.) the attachment mechanism to release the first pad conditioner headfrom the first head carrier.illustrates attachingthe third pad conditioner head (shown with reference number) to the first head carrier. Althoughillustrates the third pad conditioner headto comprise the brush, other conditioner head types of the third pad conditioner headare within the scope of the present disclosure.

In some embodiments, different conditioner head types used by the first pad conditionerare used to achieve various impacts. In some embodiments, one or more conditioner head types are selected for use in the first conditioning process based upon one or more desired conditioning functions. In some embodiments, relative to one or more other conditioner head types, the diamond disk at least one of (i) has greater roughness and/or abrasiveness, or (ii) removes portions of the polishing surfaceof the polishing padwith greater speed. In some embodiments, relative to one or more other conditioner head types, the brush reaches more deeply into the polishing padfor cleaning the polishing pad, such as cleaning recesses of the polishing pad. In some embodiments, relative to one or more other conditioner head types, the hydrophobic pad removes hydrophobic byproducts from the polishing padwith greater speed. In some embodiments, relative to one or more other conditioner head types, the hydrophilic pad removes hydrophilic byproducts from the polishing padwith greater speed. In some embodiments, the hard pad cleans the polishing padwhile removing portions of the polishing surfaceat a lower rate than the diamond disk. In some embodiments, relative to one or more other conditioner head types, the sponge removes one or more types of byproducts from the polishing padwith greater speed.

In some embodiments, the second pad conditioner headof the second pad conditioneris of a second conditioner head type. In some embodiments, the first conditioner head type of the first pad conditioner headis different than the second conditioner head type, such as where (i) the first pad conditioner headcomprises the diamond disk, and the second pad conditioner headcomprises at least one of the brush, the hydrophilic pad, the hydrophobic pad, the hard pad, or the sponge, (ii) the first pad conditioner headcomprises the brush, and the second pad conditioner headcomprises at least one of the diamond disk, the hydrophilic pad, the hydrophobic pad, the hard pad, or the sponge, (iii) the first pad conditioner headcomprises the hydrophilic pad, and the second pad conditioner headcomprises at least one of the diamond disk, the brush, the hydrophobic pad, the hard pad, or the sponge, (iv) the first pad conditioner headcomprises the hydrophobic pad, and the second pad conditioner headcomprises at least one of the diamond disk, the brush, the hydrophilic pad, the hard pad, or the sponge, (v) the first pad conditioner headcomprises the hard pad, and the second pad conditioner headcomprises at least one of the diamond disk, the brush, the hydrophilic pad, the hydrophobic pad, or the sponge, or (vi) the first pad conditioner headcomprises the sponge, and the second pad conditioner headcomprises at least one of the diamond disk, the brush, the hydrophilic pad, the hydrophobic pad, or the hard pad. Embodiments are contemplated in which the first pad conditioner headis of the same conditioner head type as the second pad conditioner head, such as where (i) the first pad conditioner headcomprises the diamond disk, and the second pad conditioner headcomprises a second diamond disk, (ii) the first pad conditioner headcomprises the brush, and the second pad conditioner headcomprises a second brush, (iii) the first pad conditioner headcomprises the hydrophilic pad, and the second pad conditioner headcomprises a second hydrophilic pad, (iv) the first pad conditioner headcomprises the hydrophobic pad, and the second pad conditioner headcomprises a second hydrophobic pad, (v) the first pad conditioner headcomprises the hard pad, and the second pad conditioner headcomprises a second hard pad, or (vi) the first pad conditioner headcomprises the sponge, and the second pad conditioner headcomprises a second sponge.

illustrates the polishing apparatuscomprising a controllerand a set of sensors (e.g., a set of one or more sensors) in accordance with some embodiments. In some embodiments, the controlleris connected to and/or configured to control one or more components of the polishing apparatus, such as at least one of the first pad conditioner, the second pad conditioner, the first driving mechanism, the second driving mechanism, the third driving mechanism, the fourth driving mechanism, the fifth driving mechanism, the sixth driving mechanism, the seventh driving mechanism, the eighth driving mechanism, the wafer holder, the slurry provider, or other component of the polishing apparatus. In some embodiments, the controllercontrols the first pad conditionervia transmitting a first control signal CSto the first pad conditionerusing at least one of a wired connection, a wireless connection, etc. In some embodiments, the controllercontrols the second pad conditionervia transmitting a second control signal CSto the second pad conditionerusing at least one of a wired connection, a wireless connection, etc.

In some embodiments, the controllercontrols a first set of parameters (e.g., a first set of one or more parameters) associated with the first pad conditionerand/or the first conditioning process. In some embodiments, the first set of parameters comprises at least one of (i) the lengthof the first pad conditionerand/or a length of the first pad conditioner arm, (ii) the heightof the first pad conditionerand/or a length of the first pad conditioner cylinder, (iii) a hardness and/or roughness of the first pad conditioner head, (iv) a size of the first pad conditioner head, (v) a conditioner head type, (vi) the first oscillation path, (vii) an oscillation speed by which the first pad conditioner armoscillates the first head carrierand the first pad conditioner headalong the first oscillation path, (viii) the first rotation speed with which the first pad conditioner headis rotated, (ix) the third rotational directionby which the first pad conditioner headis rotated, (x) the first pad conditioning force exerted by the first pad conditioner headonto the polishing pad, or (xi) one or more other parameters.

In some embodiments, the controllerperforms and/or facilitates a first set of adjustments (e.g., a first set of one or more adjustments) of the first pad conditionerand/or the first conditioning process. In some embodiments, the first set of adjustments comprise at least one of (i) adjusting the lengthof the first pad conditioner, such as by extending or retracting the first pad conditioner armusing at least one of hydraulic means, pneumatic means, or other means of controlling a length of the first pad conditioner arm, (ii) adjusting the heightof the first pad conditioner, such as by extending or retracting the first pad conditioner cylinderusing at least one of hydraulic means, pneumatic means, or other means of controlling a length of the first pad conditioner cylinder, (iii) adjusting a hardness and/or roughness of the first pad conditioner head, (iv) adjusting a size of the first pad conditioner head, (v) replacing the first pad conditioner headwith a pad conditioner head (e.g., the third pad conditioner head) of a different conditioner head type, (vi) adjusting the first oscillation pathto span a different oscillation path, such as a larger oscillation path or a smaller oscillation path, (vii) adjusting an oscillation speed by which the first pad conditioner armoscillates the first head carrierand the first pad conditioner headalong the first oscillation path, (viii) adjusting the first rotation speed with which the first pad conditioner headis rotated, (ix) changing a direction of the third rotational directionby which the first pad conditioner headis rotated, (x) adjusting the first pad conditioning force exerted by the first pad conditioner headonto the polishing pad, or (xi) one or more other adjustments.

In some embodiments, the controllercontrols the first set of parameters and/or performs and/or facilitates the first set of adjustments based upon a set of measurementsreceived from the set of sensors. In some embodiments, the set of sensors collect measurements in at least one of a continuous manner, a periodic manner, or an aperiodic manner. In some embodiments, the set of sensors comprise at least one of one or more proximity sensors, one or more spectrometry sensors, one or more image sensors, or one or more other types of sensor. In some embodiments, a sensor of the set of sensors is positioned proximal a component of the polishing apparatus. In some embodiments, the set of sensors comprise one or more sensors positioned proximal the polishing padto collect one measurements associated with the polishing padand provide the one or more measurements to the controller. In some embodiments, the set of sensors comprise at least one of a first sensor S(comprising at least one of a first proximity sensor, a first spectrometry sensor, a first image sensor, or other type of sensor), a second sensor S(comprising at least one of a second proximity sensor, a second spectrometry sensor, a second image sensor, or other type of sensor), a third sensor S(comprising at least one of a third proximity sensor, a third spectrometry sensor, a third image sensor, or other type of sensor), or one or more other sensors (not shown).

In some embodiments, the first conditioning process is performed (in-situ) concurrently with the polishing process performed by the polishing apparatusto polish the first semiconductor wafer. In some embodiments, the polishing apparatusprovides for in-situ control capability of one or more parameters of the first set of parameters of the first conditioning process performed using the first pad conditioner. In some embodiments, one or more adjustments of the first set of adjustments are performed during the polishing process.

In some embodiments, the controllercontrols one or more parameters of the first set of parameters based upon a target thickness profile associated with the polishing pad. In some embodiments, the target thickness profile is indicative of one or more target thicknesses of one or more portions of the polishing pad. In some embodiments, the controllerperforms and/or facilitates one or more adjustments of the first set of adjustments to achieve the one or more target thicknesses at the one or more portions of the polishing pad. In some embodiments, the controllerdetermines a measured thickness of a portion of the polishing padbased upon the set of measurements. In some embodiments, the controllercompares the measured thickness with a target thickness (indicated by the target thickness profile) of the portion of the polishing padto determine a thickness difference. In some embodiments, the controllercontrols one or more parameters of the first set of parameters based upon the thickness difference. In some embodiments, based upon the measured thickness being greater than the target thickness, the controllerperforms and/or facilitates one or more adjustments comprising at least one of (i) increasing the first pad conditioning force exerted by the first pad conditioner headonto the polishing pad, or (ii) increasing a hardness and/or roughness of the first pad conditioner head. In some embodiments, the controllerperforms the one or more adjustments (i) in real time in response to the set of measurements, (ii) during the first conditioning process, (iii) during the polishing process (e.g., in-situ adjustments), and/or (iv) outside the polishing process (e.g., ex-situ adjustments).

In some embodiments, the controllercontrols a second set of parameters (e.g., a second set of one or more parameters) associated with the second pad conditionerand/or the second conditioning process. In some embodiments, the second set of parameters comprise one, some or all parameters provided herein with respect to the first set of parameters. In some embodiments, the controllerperforms and/or facilitates a second set of adjustments (e.g., a second set of one or more adjustments) associated with the second pad conditionerand/or the second conditioning process. In some embodiments, the second set of adjustments comprise one, some or all adjustments provided herein with respect to the first set of adjustments.

In some embodiments, the polishing apparatuscomprises the second pad conditioner(e.g., a standard pad conditioner) and a set of supplementary pad conditioners (e.g., a set of one or more pad conditioners). In some embodiments, the polishing apparatusis manufactured to include the second pad conditioner, and subsequently the set of supplementary pad conditioners are retrofitted to the polishing apparatus. In some embodiments, the polishing apparatusis manufactured to include the second pad conditionerand the set of supplementary pad conditioners. In some embodiments, the set of supplementary pad conditioners comprise at least one of the first pad conditioner, a third pad conditioner, a fourth pad conditioner, a fifth pad conditioner, or one or more other pad conditioners. In some embodiments, each pad conditioner of the set of supplementary pad conditioners has one, some, or all of the features provided herein with respect to the first pad conditioner. In some embodiments, each pad conditioner of the set of supplementary pad conditioners performs one, some or all of the actions provided herein with respect to the first pad conditioner.

In some embodiments, pad conditioners of the set of supplementary pad conditioners comprise pad conditioner heads of different head types. In some embodiments, all pad conditioners of the set of supplementary pad conditioners comprise pad conditioner heads of the same head type, such as at least one of the diamond disk, the brush, the hydrophilic pad, the hydrophobic pad, or the hard pad. In some embodiments, one or more pad conditioners of the set of supplementary pad conditioners comprise one or more pad conditioner heads that are of different head types than the second conditioner head type of the second pad conditioner head. In some embodiments, one or more pad conditioners of the set of supplementary pad conditioners comprise one or more pad conditioner heads that are of the same head type as the second conditioner head type of the second pad conditioner head.

illustrate various arrangements of the set of supplementary pad conditioners relative to the polishing pad, in accordance with some embodiments. For simplicity, components other than the set of supplementary pad conditioners and the polishing pad, such as the second pad conditioner, the wafer holder, etc., are not depicted in.

In some embodiments, each pad conditioner of one, some, or all of the set of supplementary pad conditioners is positioned such that a pad conditioner head of the pad conditioner is in contact with and/or conditions at least some of a first edge portionof the polishing surfaceof the polishing pad. In some embodiments, the first edge portioncomprises the edgeof the polishing surface. In some embodiments, the first edge portionspans a portion of the polishing surfacefrom the edgeto a pointof the polishing surfaceseparated from the edgeby a third distance. In some embodiments, the third distanceis at least one of (i) at most about 300 millimeters, (ii) at most about 200 millimeters, (iii) between about 30 millimeters to about 300 millimeters, or (iv) between about 30 millimeters to about 200 millimeters. Other values of the third distanceare within the scope of the present disclosure. In some embodiments, the third distanceis configured based upon a diameter corresponding to a platen diameter of the platenand/or a pad diameter of the polishing pad. The third distanceis at least one of (i) between about 0.02×d to about 0.5×d, or (ii) between about 0.04×d to about 0.25×d, wherein d corresponds to the diameter. Other values of the third distanceare within the scope of the present disclosure. Embodiments are contemplated in which the first edge portionis separated from the edge(not shown) of the polishing surfaceby a fourth distance (not shown). The fourth distance is at least one of (i) at most about 200 millimeters, (ii) at most about 100 millimeters, (iii) at most about 50 millimeters, or (iv) at most about 30 millimeters. Other values of the fourth distance are within the scope of the present disclosure.

In some embodiments, a size (e.g., a diameter) of the first pad conditioner headis based upon the third distance. In some embodiments, a greater size of the first pad conditioner headcorresponds to a greater value of the third distance. In some embodiments, the size of the first pad conditioner headis about equal to the third distanceand/or a position of the first pad conditioner headdoes not change during a time period such that during the time period, the first edge portionof the polishing surfaceis conditioned by the polishing padrotating in the first rotational directionwhile the first pad conditioner headis in contact with the first edge portion. In some embodiments, the size (e.g., the diameter) of the first pad conditioner headis greater than or less than the third distance.

illustrates a top view of a first arrangementof the set of supplementary pad conditioners comprising a single pad conditioner corresponding to the first pad conditioner.illustrates a top view of a second arrangementof the set of supplementary pad conditioners comprising two pad conditioners comprising the first pad conditionerand the third pad conditioner (shown with reference number).illustrates a top view of a third arrangementof the set of supplementary pad conditioners comprising two pad conditioners comprising the first pad conditionerand the third pad conditioner. In some embodiments, the first pad conditionerand the third pad conditionerare positioned in symmetrical and/or opposite positions relative to the polishing surface.

In some embodiments, the third pad conditionercomprises one, some or all of the features provided herein with respect to the first pad conditioner. In some embodiments, the third pad conditionercomprises at least one of a third pad conditioner arm, a third pad conditioner head (not shown), a third head carrierconfigured to hold the third pad conditioner head, or a third pad conditioner cylinder. In some embodiments, the third pad conditionerperforms a third conditioning process to condition a third portion of the polishing pad. In some embodiments, during at least some of the third conditioning process, the third pad conditioneris in contact with the third portion. In some embodiments, the third portion corresponds to the first edge portion. In some embodiments, the controllercontrols a third set of parameters (e.g., a third set of one or more parameters) of the third pad conditioner. In some embodiments, the third set of parameters comprises one, some or all parameters provided herein with respect to the first set of parameters. In some embodiments, the controllerperforms a third set of adjustments (e.g., a third set of one or more adjustments) using one or more of the techniques provided herein with respect to performing the first set of adjustments. In some embodiments, the third set of adjustments comprises one, some or all adjustments provided herein with respect to the first set of adjustments.

illustrates a top view of a fourth arrangementof the set of supplementary pad conditioners comprising three pad conditioners comprising the first pad conditioner, the third pad conditionerand the fourth pad conditioner (shown with reference number). In some embodiments, the three pad conditioners are arranged along a triangle (e.g., an equilateral triangle) with sides having lengths about equal to a. In some embodiments, a center of gravity of the triangle is about equal to a centerof the polishing padand/or the platen. In some embodiments, the three pad conditioners are arranged such that respective pad conditioner heads of the three pad conditioners overlap with vertices of the triangle. A radius of the platenand/or the polishing padis at least one of (i) between about