Micro LED Arrays on Glass Substrates for Optical Communications

Embodiments of the present disclosure relate to optoelectronic packages, and more particularly to optical communication systems that include micro-LED arrays provided on glass substrates.

Future serializer/deserializer (SerDes) requirements will significantly increase power consumption for electrical and optical communications. One solution to the increase in power consumption is to decrease the electrical SerDes distance between the electrical die and the photonic engine.

However, it is to be appreciated that reducing the SerDes distance is not without issue. Particularly, the light source for the photonic engine is commonly a group III-V semiconductor laser or a silicon photonics laser. Such devices are sensitive to temperature increases. That is, above a certain temperature (e.g., 80° C.), the laser stops functioning properly. This is problematic because the electrical die operates at relatively high temperatures. As such, thermal performance issues limit how much the SerDes distance can be decreased.

Described herein are optoelectronic packages that include optical communication systems that include micro-LED arrays provided on glass substrates, in accordance with various embodiments. In the following description, various aspects of the illustrative implementations will be described using terms commonly employed by those skilled in the art to convey the substance of their work to others skilled in the art. However, it will be apparent to those skilled in the art that the present invention may be practiced with only some of the described aspects. For purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the illustrative implementations. However, it will be apparent to one skilled in the art that the present invention may be practiced without the specific details. In other instances, well-known features are omitted or simplified in order not to obscure the illustrative implementations.

Various operations will be described as multiple discrete operations, in turn, in a manner that is most helpful in understanding the present invention, however, the order of description should not be construed to imply that these operations are necessarily order dependent. In particular, these operations need not be performed in the order of presentation.

As noted above, reducing the SerDes distance between the electrical die and the photonics engine is necessary in order to reduce power demands on the system. However, this results in subjecting the photonics engine to higher temperatures that may not be compatible with existing group III-V laser or silicon photonics technologies. Accordingly, embodiments disclosed herein use an array of micro light emitting diodes (LEDs) in order to provide the light for the system. Micro LEDs are compatible with higher temperatures, and performance is not significantly diminished by bringing the array of micro LEDs close to the hot electrical die. For example, micro LEDs have been shown to perform with minimal degradation up to temperatures of approximately 250° C.

As used herein, micro LEDs may refer to LED devices that have dimensions that are less than approximately 100 μm. Micro LEDs may operate with wavelengths between 350 nm and 800 nm in some instances. Additionally, filters (e.g., quantum dot filters) may be used to change the wavelength of a given micro LED device. In addition to improved thermal performance, micro LEDs are also generally characterized as a low power substitute to silicon photonics devices. For example, powers as low as approximately 0.1 pJ/bit to approximately 0.5 pJ/bit have been demonstrated, compared to approximately 5 pJ/bit for silicon photonics devices. As used herein, “approximately” may refer to a range of values that is within 10% of the stated value. For example, approximately 100 μm may refer to a range between 90 μm and 110 μm.

In an embodiment, micro LEDs described herein may be any suitable micro LED material system. In a particular embodiment, the micro LEDs may include InGaN, AlInGaP, or the like. In some embodiments, the micro LEDs may be grown on the underlying substrate. That is, micro LEDs may be fabricated in line with the photonics engine. In other embodiments, the micro LEDs may be grown on donor wafers, and the micro LEDs may be placed on the target substrate with a pick and place operation. Such a configuration may be particularly beneficial in embodiments where micro LEDs with different wavelengths are provided in the same photonics engine.

1 FIG.A 100 100 101 101 101 101 101 101 105 106 105 101 100 106 112 120 101 106 101 Referring now to, a cross-sectional illustration of an optoelectronic moduleis shown, in accordance with an embodiment. In an embodiment, the optoelectronic modulemay comprise a substrate. The substratemay be any suitably rigid substrate that is compatible with high temperature environments. For example, the substratemay comprise glass, silicon, or the like. In the case of a silicon substrate, the substratemay be an active substrate (as will be described in greater detail below). In an embodiment, the substratemay include conductive features such as viasand traces. The viasmay allow for power to be delivered through a thickness of the substrateand allow for vertical integration of the optoelectronic module. The tracesmay provide electrical coupling between an electronic dieand the photonics module. While shown as being embedded in the substrate, in some other embodiments, the tracesmay be disposed on a top surface of the substrate.

112 112 113 113 106 115 115 In an embodiment, the diemay be an electronic integrated circuit (EIC). The diemay include an active transistor layer. The active transistor layermay be coupled to the tracethrough back-end-of-line routing (not shown) and an interconnect. The interconnectmay comprise a solder ball, a copper bump, hybrid bonding, or any other first level interconnect (FLI) architecture.

120 121 121 101 121 122 122 121 122 121 121 122 122 1 FIG.A In an embodiment, the photonics modulemay include a transistor layer. The transistor layermay include thin film transistors (TFTs). The TFTs may be fabricated over the substrateusing standard TFT materials and processes. In an embodiment, the transistor layerincludes the driving circuitry used to operate one or more micro LEDs in the micro LED layer. The micro LED layermay be provided over the transistor layer. The micro LED layermay comprise an array of micro LEDs (not individually shown in). The micro LEDs may include any micro LED, such as those described in greater detail above. In an embodiment, each micro LED may be electrically coupled to a set of TFTs in the transistor layer. The micro LEDs may be fabricated directly over the transistor layer, or the micro LEDs may be attached to the transistor layerusing pick and place operations. In an embodiment, the micro LED layermay comprise ten or more individual micro LEDs. For example, the micro LED layermay comprise one hundred or more micro LEDs in some embodiments.

122 125 123 123 125 122 125 125 123 120 120 120 125 120 125 101 In an embodiment, the micro LED layermay be coupled to one or more optical fibersthrough a connector. The connectormay be a mechanical device that orients the fibersso that they are optically coupled to one or more of the micro LEDs in the micro LED layer. In the illustrated embodiment, the optical fibersare oriented horizontally, but it is to be appreciated that the optical fibersmay have any orientation coming into the connector, such as a vertical orientation. In some embodiments, the photonics moduleis configured to operate with parallel signaling. In other embodiments, the photonics moduleis configured to operate with serial signaling. In yet another embodiment, the photonics modulemay be configured to operate with both parallel and serial signaling. In an embodiment, both ends of the optical fibermay be coupled to photonics modules similar to photonics module. In other embodiments, one end of the optical fibermay be directly coupled to a waveguide in the substrate.

1 FIG.B 1 FIG.A 100 100 100 120 120 124 124 122 124 124 124 124 124 124 Referring now to, a cross-sectional illustration of an optoelectronic moduleis shown, in accordance with an additional embodiment. In an embodiment, the optoelectronic modulemay be substantially similar to the optoelectronic modulein, with the exception of the structure of the photonics module. Particularly, the photonics modulemay further include a modifier layer. The modifier layermay include functionality to modify the light emitted by the micro LEDs of the micro LED layer. For example, the modifier layermay include functionality to change the direction or focus of the light. That is, the modifier layermay include one or more lenses, mirrors, or the like. In other embodiments, the modifier layermay include functionality to change the wavelength of the light. For example, the modifier layermay include filters or the like. In a particular embodiment, the filters may include quantum dot filters or other color converters. In yet another embodiment, the modifier layermay change a polarization of the light emitted by the micro LEDs. For example, the modifier layermay include one or more polarizers.

124 123 122 124 123 124 124 124 In the illustrated embodiment, the modifier layeris a distinct layer that is provided between the connectorand the micro LED layer. However, in other embodiments, the modifier layermay be integrated as part of the connector. That is, the modifier layermay not be a distinct layer in some embodiments. Additionally, while shown as a single structure, the modifier layermay comprise multiple individual components. For example, each micro LED may be optically coupled with different lenses in the modifier layer.

2 FIG. 200 200 201 201 201 201 230 201 230 121 230 230 231 232 231 232 235 230 235 230 235 235 232 235 208 207 201 Referring now to, a cross-sectional illustration of a portion of an optoelectronic moduleis shown, in accordance with an embodiment. The optoelectronic modulemay comprise a substrate. The substratemay be a glass substrateor a silicon substrate. In an embodiment, a transistormay be provided over the substrate. The transistormay be part of the transistor layerdescribed in greater detail above. For example, the transistormay be a TFT device. The transistormay include a semiconductor layerwith electrodesover the semiconductor layer. In an embodiment, at least one of the electrodesmay be coupled to a micro LED. While a single transistoris shown as being coupled to the micro LED, it is to be appreciated that multiple transistorsin any suitable circuit configuration may be coupled to the micro LEDin order to drive and otherwise control the micro LED. In an embodiment, the electrodemay be coupled to the micro LEDby at least a viathat passes through an insulating layerdisposed over the substrate.

235 207 235 236 236 235 237 237 235 224 224 224 223 223 224 223 235 2 FIG. In an embodiment, the micro LEDmay be provided over the insulating layer. The micro LEDmay be set into a cavity formed in a layer. The layermay be a reflective layer in some embodiments. The micro LEDmay be directly contacted with an optical glueor the like. The optical glueallows for light from the micro LEDto pass up to the modifier layer. In an embodiment, the modifier layermay include one or more of a filter, a color converter, a lens, a mirror, a polarizer, or the like. In an embodiment, the modifier layermay modify the light before it reaches a connector. The connectormay also integrate one or more portions of the modifier layer. In an embodiment, the connectoroptically couples the micro LEDto an optical fiber (not shown in).

3 FIG.A 300 300 301 301 301 305 306 301 312 301 315 312 313 Referring now to, a cross-sectional illustration of an optoelectronic moduleis shown, in accordance with an embodiment. In an embodiment, the optoelectronic modulecomprises a substrate. The substratemay be a silicon substratein some embodiments. Viasand tracesmay be disposed in and/or on the silicon substrate. In an embodiment, an EICmay be attached to the substratethrough interconnects, such as solder balls or the like. The EICmay comprise an active transistor layer.

320 301 301 321 321 301 301 321 301 301 321 301 In an embodiment, a photonics moduleis attached to the substrate. The photonics modulemay include a transistor layer. The transistor layermay be embedded in the substrate. In the case of a semiconductor substrate, such as a silicon substrate, the transistor layermay be fabricated directly on the substrate. For example, transistor devices may be fabricated using traditional semiconductor processing operations (e.g., patterning, deposition, etching, etc.). While shown as being truly embedded in the substrate, it is to be appreciated that one or more portions of the transistor layermay extend up above the semiconductor substrate.

322 321 322 321 322 235 In an embodiment, a micro LED layermay be provided over the transistor layers. The micro LED layermay comprise an array of micro LEDs. The micro LEDs may be controlled by transistors within the underlying transistor layer. In an embodiment, the micro LEDs may all be similar to each other. In other embodiments, the micro LED layermay include micro LEDs that emit more than one wavelength of light. The micro LEDs may be similar to the micro LEDdescribed in greater detail above.

323 322 325 323 124 323 322 323 In an embodiment, a connectormay optically couple the micro LED layerto one or more optical fibers. While not shown, it is to be appreciated that the connectormay include one or more features of a modifier layer, such as modifier layerdescribed in greater detail above. For example, the connectormay include lenses, mirrors, filters, polarizers, or the like. In other embodiments, a distinct modifier layer (not shown) may be provided between the micro LED layerand the connector.

3 FIG.B 3 FIG.B 3 FIG.A 3 FIG.B 300 300 300 321 322 312 332 313 312 320 312 320 312 Referring now to, a cross-sectional illustration of an optoelectronic moduleis shown, in accordance with an embodiment. In an embodiment, the optoelectronic moduleinmay be substantially similar to the optoelectronic modulein, with the exception of the transistor layer. In, the transistor layeris omitted from the structure. Instead, the driving circuitry for the micro LED layermay be integrated into the EIC. For example, driving circuitry for the micro LED layermay be implemented in the active transistor layerof the EIC. As such, complexity of the photonics modulemay be reduced. In an embodiment, the driving circuitry may be offloaded to the EICwithout significant issues because of the proximity of the photonics moduleto the EIC.

320 322 322 301 306 301 322 323 325 323 123 As shown, the photonics modulemay include a micro LED layer. The micro LED layermay be disposed directly onto the substrate. For example, tracesembedded in the substratemay directly contact the micro LEDs of the micro LED layer. A connectorthat couples the micro LEDs to the one or more optical fibersmay also be included. The connector—may be substantially similar to any of the connectorarchitectures described in greater detail above.

4 4 FIGS.A-F 1 FIG.A 100 Referring now to, a series of cross-sectional illustrations of a process for forming an optoelectronic module is shown, in accordance with an embodiment. In the illustrated embodiment, the optoelectronic module may be substantially similar to the optoelectronic moduledescribed above with respect to. However, it is to be appreciated that any of the optoelectronic modules described herein may be fabricated with similar processing operations.

4 FIG.A 401 401 401 401 401 Referring now to, a cross-sectional illustration of a substrateis shown, in accordance with an embodiment. In an embodiment, the substratemay comprise any suitable rigid and high temperature compatible substrate. For example, the substratemay comprise glass or a semiconductor material, such as silicon. In the illustrated embodiment, a single optoelectronic module is fabricated on the substrate. However, it is to be appreciated that the substratemay be sized to accommodate a plurality of optoelectronic modules that can be built substantially in parallel with each other.

4 FIG.B 401 401 406 401 406 401 406 401 406 405 401 401 405 405 Referring now to, a cross-sectional illustration of the substrateafter electrical routing is fabricated on and/or in the substrateis shown, in accordance with an embodiment. In an embodiment, conductive tracesmay be fabricated in the substrate. In the illustrated embodiment, the tracesare embedded in the substrate. However, it is to be appreciated that the tracesmay also be formed on a top surface of the substratein some embodiments. The tracesmay be fabricated with any suitable deposition and/or patterning process common in the art of semiconductor manufacturing. In an embodiment, one or more viasmay also be formed through a thickness of the substrate. A laser drilling process, a wet etching process, a dry etching process, or the like may be used in order to form via openings through the substrate. While shown as having substantially vertical sidewalls, it is to be appreciated that the viasmay have sloped sidewalls as a result of the process for forming the via openings. After the via openings are formed, conductive material may be disposed in the via openings to form the vias.

4 FIG.C 421 421 421 421 421 401 421 406 421 406 421 401 Referring now to, a cross-sectional illustration of the optoelectronic module after a transistor layeris formed is shown, in accordance with an embodiment. In an embodiment, the transistor layermay comprise a plurality of transistors that are to function as the driving circuitry for the overlying micro LEDs. The driving circuitry may have any suitable circuit configuration. In a particular embodiment, the transistor layermay be formed with TFT technology. That is, a thin layer of semiconductor material may be deposited and patterned, and electrical contacts may be provided over the semiconductor material. While TFT devices may be particularly beneficial due to their ease of fabrication, it is to be appreciated that any transistor architecture may be used to form the transistor layer. In an embodiment, the transistor layermay be provided above the substrate. The transistor layermay be contacted from below by the one or more traces. Alternatively, the transistor layermay be contacted from the side or from above by the one or more traces. Additionally, while not shown, it is to be appreciated that one or more redistribution layers may be provided between the transistor layerand the substrate.

4 FIG.D 422 422 421 422 Referring now to, a cross-sectional illustration of the optoelectronic module after a micro LED layeris formed is shown, in accordance with an embodiment. In an embodiment, the micro LED layermay comprise a plurality of micro LEDs. The micro LEDs may be controlled by driving circuitry in the underlying transistor layer. The micro LED layermay contain all the same type of micro LED (e.g., all micro LEDs emit the same wavelength light). In other embodiments, there may be two or more different types of micro LED (e.g., different wavelengths of light may be emitted by different micro LEDs).

422 422 422 421 In an embodiment, the micro LED layermay be formed with any suitable process. In one instance, the micro LED layermay be formed with a pick and place operation. Such an embodiment may be particularly beneficial when different types of micro LEDs are used in the array of micro LEDs in the micro LED layer. In another embodiment, the micro LEDs may be grown (fabricated) on the underlying transistor layer.

4 FIG.E 412 412 412 412 422 412 413 413 422 415 412 406 Referring now to, a cross-sectional illustration of the optoelectronic module after an EICis attached is shown, in accordance with an embodiment. In an embodiment, the EICmay be a die that operates in the electronic regime. That is, optical signals from the photonics module are converted to an electrical signal for processing in the EIC. Alternatively, the EICprovides an electrical signal to the photonics module which is then converted to an optical signal by the array of micro LEDs in the micro LED layer. In an embodiment, the EICmay comprise an active transistor layer. The transistors in the active transistor layermay be electrically coupled to the photonics module with the micro LED layer. For example, interconnectsmay couple the EICto one or more conductive traces.

4 FIG.F 423 422 423 422 425 423 423 423 422 Referring now to, a cross-sectional illustration of the optoelectronic module after a connectoris coupled to the micro LED layeris shown, in accordance with an embodiment. In an embodiment, the connectormay optically couple micro LEDs in the micro LED layerto one or more optical fibers. The connectormay also comprise features that alter the light emitted by the micro LEDs. For example, the connectormay comprise lenses, mirrors, filters, polarizers, and/or the like. In an alternative embodiment, one or more of the features (e.g., lenses, mirrors, polarizers, etc.) may be integrated as a discrete component between the connectorand the micro LED layer.

5 FIG. 540 540 541 500 541 541 501 542 501 506 505 501 Referring now to, a cross-sectional illustration of an optoelectronic systemis shown, in accordance with an embodiment. In an embodiment, the optoelectronic systemmay comprise a board, such as a printed circuit board (PCB). In an embodiment, an optoelectronic modulemay be coupled to the board. For example, the boardmay be coupled to a substrateby interconnects. The substratemay be a glass substrate, a silicon substrate, or the like. In an embodiment, conductive features, such as tracesand viasmay be formed on and/or in the substrate.

500 512 512 501 515 513 512 520 501 520 521 522 523 523 522 525 In an embodiment, the optoelectronic modulemay further comprise an EIC. The EICmay be coupled to the substrateby interconnects. An active transistor layermay be provided in the EIC. In an embodiment, a photonics modulemay be coupled to the substrate. For example, the photonics modulemay comprise a transistor layer, a micro LED layer, and a connector. The connectoroptically couples the micro LEDs in the micro LED layerto one or more optical fibers.

6 FIG.A 620 620 601 601 601 601 605 601 621 601 621 Referring now to, a cross-sectional illustration of a photonics moduleis shown, in accordance with an embodiment. In an embodiment, the photonics modulecomprises a substrate. The substratemay be a glass substrate, a silicon substrate, or the like. In an embodiment, one or more viasmay pass through a thickness of the substrate. In an embodiment, a transistor layermay be provided over the substrate. The transistor layermay comprise TFT devices that are used to control micro LEDs or photodiodes.

620 622 622 623 622 In an embodiment, the photonics modulemay comprise a transmit side and a receive side. The transmit side may include a micro LED layerA. The micro LED layerA may comprise an array of micro LEDs. The micro LEDs may include any suitable type of micro LED, such as InGaN, AlInGaP, or the like. The micro LEDs emit light that can be used to propagate signals to an external device over optical fibers (not shown). In an embodiment, a connectormay optically couple the micro LED layerA to the optical fibers. The connector may further comprise one or more of a filter (e.g., quantum dot filters), color converters, polarizers, lenses and the like.

622 622 622 623 In an embodiment, the receive side may include a photodiode layerB. The photodiode layerB may include any type of photodiode. In some embodiments, the photodiodes are micro LEDs. In other embodiments, the photodiodes comprise SiGe, organic polymers, or the like. The photodiodes in the photodiode layerB may be coupled to one or more optical fibers by a connector. The connector may further comprise one or more of a filter, a color converter, a polarizer, and the like.

6 FIG.B 6 FIG.B 6 FIG.A 620 620 620 627 627 627 622 627 622 Referring now to, a cross-sectional illustration of a photonics moduleis shown, in accordance with an additional embodiment. In an embodiment, the photonics moduleinis substantially similar to the photonics modulein, with the addition of a multiplexerA and a demuxerB. The multiplexermay multiplex a plurality of signals from the micro LEDs in the micro LED layerA and configure their signals to be propagated along a single optical fiber, as indicated by the single arrow. Similarly, the demuxerB may take a multiplexed signal and divide the multiplexed signal into a plurality of signals for individual ones of the photodiodes in the photodiode layerB. While a single MUX/DEMUX architecture is shown, it is to be appreciated that multiple MUX/DEMUX pairs can be used to feed multiple optical fibers.

7 7 FIGS.A-C 740 720 Referring now to, a series of cross-sectional illustrations depicting optoelectronics systemsthat include different placements of the photonics moduleis shown, in accordance with an embodiment.

7 FIG.A 740 740 741 743 743 741 742 743 712 743 715 Referring now to, a cross-sectional illustration of an optoelectronic systemis shown, in accordance with an embodiment. The optoelectronic systemmay comprise a board, such as a PCB, and an interposer. The interposermay be coupled to the boardby interconnects. In an embodiment, the interposermay be any type of substrate, such as glass, silicon, organic, or the like. In an embodiment, an EICis coupled to the interposerby interconnects.

7 FIG.A 712 714 714 720 712 705 701 720 714 720 720 721 722 723 In the particular embodiment shown in, the EICmay include through silicon vias (TSVs). The TSVsallow for the photonics moduleto be directly coupled to a backside of the EIC. As shown, viasthrough the substratemay couple the photonics moduleto the TSVs. The photonics modulemay be similar to any of the photonics modules described in greater detail above. For example, the photonics modulemay include a transistor layerand micro LED/photodiode layers. Connectorsmay optically couple the micro LEDs and photodiodes to optical fibers (not shown).

7 FIG.B 7 FIG.B 7 FIG.A 740 740 740 720 712 720 743 720 712 706 743 720 743 Referring now to, a cross-sectional illustration of an optoelectronic systemis shown, in accordance with an additional embodiment. The optoelectronic systeminmay be substantially similar to the optoelectronic systemin, with the exception of the placement of the photonics module. Instead of being provided over the backside of the EIC, the photonics moduleis provided on the interposer. The photonics modulemay be electrically coupled to the EICthrough a traceon the interposer. While not shown, in some embodiments the photonics modulemay be coupled to the interposerby interconnects such as FLIs or the like. In the illustrated embodiment, a direct bonding architecture is shown.

7 FIG.C 7 FIG.C 7 FIG.B 740 740 740 720 720 741 746 701 741 745 741 706 743 707 743 720 712 Referring now to, a cross-sectional illustration of an optoelectronic systemis shown, in accordance with yet another embodiment. The optoelectronic systeminmay be substantially similar to the optoelectronic systemin, with the exception of the placement of the photonics module. As shown, the photonics modulemay be mounted on the board. Interconnectsmay couple the substrateto the board. Traceson the board, traceon the interposer, and viaon the interposercouple the photonics moduleto the EIC.

8 FIG. 800 800 802 802 804 806 804 802 806 802 806 804 illustrates a computing devicein accordance with one implementation of the invention. The computing devicehouses a board. The boardmay include a number of components, including but not limited to a processorand at least one communication chip. The processoris physically and electrically coupled to the board. In some implementations the at least one communication chipis also physically and electrically coupled to the board. In further implementations, the communication chipis part of the processor.

These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, an accelerometer, a gyroscope, a speaker, a camera, and a mass storage device (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth).

806 800 806 800 806 806 806 The communication chipenables wireless communications for the transfer of data to and from the computing device. The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. The communication chipmay implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The computing devicemay include a plurality of communication chips. For instance, a first communication chipmay be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and a second communication chipmay be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

804 800 804 The processorof the computing deviceincludes an integrated circuit die packaged within the processor. In some implementations of the invention, the integrated circuit die of the processor may be part of an optoelectronic system that includes a photonics module that has an array of micro LEDs, in accordance with embodiments described herein. The term “processor” may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.

806 806 The communication chipalso includes an integrated circuit die packaged within the communication chip. In accordance with another implementation of the invention, the integrated circuit die of the communication chip may be part of an optoelectronic system that includes a photonics module that has an array of micro LEDs, in accordance with embodiments described herein.

The above description of illustrated implementations of the invention, including what is described in the Abstract, is not intended to be exhaustive or to limit the invention to the precise forms disclosed. While specific implementations of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize.

These modifications may be made to the invention in light of the above detailed description. The terms used in the following claims should not be construed to limit the invention to the specific implementations disclosed in the specification and the claims. Rather, the scope of the invention is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.

Example 1: an optical communication module, comprising: a substrate; a transistor over the substrate; an array of micro light emitting diodes (LEDs) over the transistor; and a connector over the array of micro LEDs.

Example 2: the optical communication module of Example 1, wherein the transistor is a thin film transistor (TFT).

Example 3: the optical communication module of Example 1 or Example 2, wherein the substrate comprises glass.

Example 4: the optical communication module of Examples 1-3, wherein the array of micro LEDs comprises micro LEDs that all emit a same wavelength of light.

Example 5: the optical communication module of Examples 1-4, wherein the array of micro LEDs comprises individual micro LEDs that emit different wavelengths of light.

Example 6: the optical communication module of Example 5, further comprising: a muxing module between the array of micro LEDs and the connector.

Example 7: the optical communication module of Examples 1-6, further comprising one or more of a lens, a filter, a quantum dot filter, a polarizer, and a mirror between the array of micro LEDs and the connector.

Example 8: the optical communication module of Examples 1-7, further comprising: vias through a thickness of the substrate.

Example 9: the optical communication module of Examples 1-8, wherein the substrate comprises silicon.

Example 10: the optical communication module of Example 9, wherein the transistor is built into the substrate.

Example 11: the optical communication module of Examples 1-10, further comprising: a receive module over the substrate, wherein the receive module comprises: an array of photodiodes; and a connector over the array of photodiodes.

Example 12: the optical communication module of Example 11, wherein the array of photodiodes comprises a second array of micro LEDs.

Example 13: an optoelectronic package, comprising: a board; an interposer coupled to the board; a die coupled to the interposer; and an optical communication module coupled to the die, wherein the optical communication module comprises: a transmit module that includes an array of micro light emitting diodes (LEDs) and a connector; and a receive module that includes an array of photodiodes and a connector.

Example 14: the optoelectronic package of Example 13, wherein the optical communication module is coupled to a backside of the die.

Example 15: the optoelectronic package of Example 13 or Example 14, wherein the optical communication module is attached to the interposer, and wherein a trace on the interposer couples the optical communication module to the die.

Example 16: the optoelectronic package of Examples 13-15, wherein the optical communication module is attached to the board, and wherein the optical communication module is coupled to the die by a first trace on the board and a second trace on the interposer.

Example 17: an optoelectronic package of Examples 13-16, wherein the transmit module and the receive module are provided on a substrate.

Example 18: the optoelectronic package of Example 17, wherein the substrate comprises glass or silicon.

Example 19: an optoelectronic module, comprising: a substrate; a die on the substrate, wherein the die operates in an electrical regime; and a transmit module on the substrate and coupled to the die, wherein the transmit module comprises: a transistor layer; a micro light emitting diode (LED) layer; and a connector.

Example 20: the optoelectronic module of Example 19, wherein the substrate comprises glass or silicon.

Example 21: the optoelectronic module of Example 19 or Example 20, further comprising: a lens and/or mirror between the micro LED layer and the connector.

Example 22: the optoelectronic module of Examples 19-21, wherein the transistor layer is embedded in the substrate.

Example 23: the optoelectronic module of Examples 19-22, wherein the transmit module is configured to transmit signals in parallel optical signaling and/or serial optical signaling.

Example 24: an optoelectronic package, comprising: a board; an interposer coupled to the board; a die operating in an electrical regime, wherein the die is coupled to the interposer; and a photonics engine coupled to the die, wherein the photonics engine comprises: a thin film transistor (TFT) layer over the interposer; a micro LED layer over the TFT layer, wherein the micro LED layer comprises an array of micro LEDs, wherein individual ones of the micro LEDs are controlled by a set of TFTs in the TFT layer; and a connector over the micro LED layer, wherein the connector is configured to couple the array of micro LEDs to one or more optical fibers.

Example 25: the optoelectronic package of Example 24, wherein the interposer comprises glass.