Display Panel and Display Apparatus Including the Same

This application is a continuation of U.S. patent application Ser. No. 17/513,835 filed on Oct. 28, 2021, which claims priority from and the benefit of Korean Patent Application No. 10-2020-0186770 filed on Dec. 29, 2020, which are hereby incorporated by reference for all purposes as if fully set forth herein.

Embodiments of the invention relate generally to a display panel and a display apparatus including the display panel, and more particularly, to a display panel having an expanded display area so as to display images in a region where a component, that is, an electronic element, is provided, and a display apparatus including the display panel.

Display apparatuses have been used for various purposes. In addition, because the thickness and weight of display apparatuses have been reduced, the range of utilization of display apparatuses has increased.

According to the use of display apparatuses, different methods of designing shapes thereof have been developed and more functions have been embedded in or linked to the display apparatuses.

The above information disclosed in this Background section is only for understanding of the background of the inventive concepts, and, therefore, it may contain information that does not constitute prior art.

One or more embodiments include a display panel having an expanded display area so as to display images on a region where a component, that is, an electronic element, is provided, and a display apparatus including the display panel. However, the above technical features are exemplary, and the scope of the disclosure is not limited thereto.

Additional features of the inventive concepts will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the inventive concepts.

According to an embodiment, a display panel includes a substrate including a main display area, a component area, and a peripheral area, an auxiliary display element in the component area, an auxiliary pixel circuit in the peripheral area, the auxiliary pixel circuit including an auxiliary thin film transistor and an auxiliary storage capacitor, a connecting line connecting the auxiliary display element to the auxiliary pixel circuit, the connecting line having at least a part in the component area, an insulating line overlapping the connecting line in the component area, and a first organic insulating layer and a second organic insulating layer stacked between the substrate and the auxiliary display element in the component area, wherein the connecting line and the insulating line are between the first organic insulating layer and the second organic insulating layer.

A refractive index of the insulating line may have a value between a refractive index of the first organic insulating layer and a refractive index of the connecting line.

The insulating line may be under the connecting line.

A thickness of the insulating line may be greater than a thickness of the connecting line.

A width of an upper surface of the insulating line may be different from a width of a lower surface of the connecting line.

The insulating line may be on the connecting line.

A thickness of the insulating line may be greater than a thickness of the connecting line.

The insulating line may include a first insulating line and a second insulating line, and the first insulating line may be under the connecting line and the second insulating line may be on the connecting line.

A refractive index of the first insulating line may have a value between a refractive index of the first organic insulating layer and a refractive index of the connecting line, and a refractive index of the second insulating line may have a value between a refractive index of the second organic insulating layer and the refractive index of the connecting line.

A thickness of the first insulating line and a thickness of the second insulating line may be less than a thickness of the connecting line.

A thickness of the first insulating line and a thickness of the second insulating line may be greater than a thickness of the connecting line.

The first organic insulating layer may include photosensitive polyimide and the second organic insulating layer may include a siloxane-based resin.

The display panel may further include a metal connecting line connecting the connecting line to the auxiliary display element, wherein the metal connecting line may be at a same layer as the connecting line and an end of the connecting line may be in direct contact with the metal connecting line.

The display panel may further include an inorganic insulating layer on the substrate, wherein the inorganic insulating layer may include a hole or a groove corresponding to the component area.

The first organic insulating layer may fill the hole or the groove of the inorganic insulating layer and may be on a front surface of the substrate.

The display panel may further include a buffer layer between the substrate and the auxiliary thin film transistor, wherein the buffer layer may include an opening corresponding to the component area.

The display panel may further include an anti-reflection layer on a lower surface of the substrate.

According to another embodiment, a display apparatus includes a display panel including a main display area including main sub-pixels, a component area including auxiliary sub-pixels, and a peripheral area, and a component under the display panel to correspond to the component area, wherein the display panel includes a substrate, an auxiliary display element in the component area, an auxiliary pixel circuit in the peripheral area, the auxiliary pixel circuit including an auxiliary thin film transistor and an auxiliary storage capacitor, a connecting line connecting the auxiliary display element to the auxiliary pixel circuit, the connecting line having at least a part in the component area, an insulating line overlapping the connecting line in the component area, and a first organic insulating layer and a second organic insulating layer stacked between the substrate and the auxiliary display element in the component area, wherein the connecting line and the insulating line are between the first organic insulating layer and the second organic insulating layer.

A refractive index of the insulating line may have a value between a refractive index of the first organic insulating layer and a refractive index of the connecting line.

The insulating line may include a first insulating line and a second insulating line, and the first insulating line may be under the connecting line and the second insulating line may be on the connecting line.

A refractive index of the first insulating line may have a value between a refractive index of the first organic insulating layer and a refractive index of the connecting line, and a refractive index of the second insulating line may have a value between a refractive index of the second organic insulating layer and the refractive index of the connecting line.

The first organic insulating layer may include photosensitive polyimide and the second organic insulating layer may include a siloxane-based resin.

The display apparatus may further include an inorganic insulating layer on the substrate, wherein the inorganic insulating layer may include a hole or a groove corresponding to the component area.

The first organic insulating layer may fill the hole or the groove of the inorganic insulating layer and may be on a front surface of the substrate.

The component may include an imaging device.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various exemplary embodiments or implementations of the invention. As used herein “embodiments” and “implementations” are interchangeable words that are non-limiting examples of devices or methods employing one or more of the inventive concepts disclosed herein. It is apparent, however, that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other instances, well-known structures and devices are illustrated in block diagram form in order to avoid unnecessarily obscuring various exemplary embodiments. Further, various exemplary embodiments may be different, but do not have to be exclusive. For example, specific shapes, configurations, and characteristics of an exemplary embodiment may be used or implemented in another exemplary embodiment without departing from the inventive concepts.

Unless otherwise specified, the illustrated exemplary embodiments are to be understood as providing exemplary features of varying detail of some ways in which the inventive concepts may be implemented in practice. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions, and/or aspects, etc. (hereinafter individually or collectively referred to as “elements”), of the various embodiments may be otherwise combined, separated, interchanged, and/or rearranged without departing from the inventive concepts.

The use of cross-hatching and/or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, neither the presence nor the absence of cross-hatching or shading conveys or indicates any preference or requirement for particular materials, material properties, dimensions, proportions, commonalities between illustrated elements, and/or any other characteristic, attribute, property, etc., of the elements, unless specified. Further, in the accompanying drawings, the size and relative sizes of elements may be exaggerated for clarity and/or descriptive purposes. When an exemplary embodiment may be implemented differently, a specific process order may be performed differently from the described order. For example, two consecutively described processes may be performed substantially at the same time or performed in an order opposite to the described order. Also, like reference numerals denote like elements.

When an element, such as a layer, is referred to as being “on,” “connected to,” or “coupled to” another element or layer, it may be directly on, connected to, or coupled to the other element or layer or intervening elements or layers may be present. When, however, an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present. To this end, the term “connected” may refer to physical, electrical, and/or fluid connection, with or without intervening elements. For the purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be construed as X only, Y only, Z only, or any combination of two or more of X, Y, and Z, such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

Although the terms “first,” “second,” etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Thus, a first element discussed below could be termed a second element without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,” “above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), and the like, may be used herein for descriptive purposes, and, thereby, to describe one elements relationship to another element(s) as illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of an apparatus in use, operation, and/or manufacture in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawings is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and, as such, the spatially relative descriptors used herein interpreted accordingly.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,” “above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), and the like, may be used herein for descriptive purposes, and, thereby, to describe one elements relationship to another element(s) as illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of an apparatus in use, operation, and/or manufacture in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawings is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and, as such, the spatially relative descriptors used herein interpreted accordingly.

Various exemplary embodiments are described herein with reference to sectional and/or exploded illustrations that are schematic illustrations of idealized exemplary embodiments and/or intermediate structures. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments disclosed herein should not necessarily be construed as limited to the particular illustrated shapes of regions, but are to include deviations in shapes that result from, for instance, manufacturing. In this manner, regions illustrated in the drawings may be schematic in nature and the shapes of these regions may not reflect actual shapes of regions of a device and, as such, are not necessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is a part. Terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense, unless expressly so defined herein.

1 FIG. 1 is a perspective view illustrating a display apparatusaccording to an embodiment.

1 FIG. 1 Referring to, the display apparatusincludes a display area DA and a peripheral area DPA on an outer portion of the display area DA. The display area DA may include a component area CA and a main display area MDA at least partially surrounding the component area CA. That is, the component area CA and the main display area MDA may separately or together display an image. The peripheral area DPA may be a non-display area on which pixels are not arranged. The display area DA may be entirely surrounded by the peripheral area DPA.

1 FIG. 1 FIG. 1 1 1 In, one component area CA is in the main display area MDA. In another embodiment, the display apparatusmay include two or more component areas CA, and shapes and sizes of the plurality of component areas CA may be different from one another. In a direction perpendicular to an upper surface of the display apparatus, the component area CA may have various shapes, e.g., a circular shape, an elliptical shape, a polygonal shape such as a square shape, a star shape, a diamond shape, etc. In addition, in, the component area CA is on an upper center (in a +y direction) of the main display area MDA that has a rectangular shape in a direction perpendicular to the upper surface of the display apparatus, but the component area CA may be at a side, e.g., an upper right side or an upper left side, of the main display area MDA having a rectangular shape.

1 The display apparatusmay provide images by using a plurality of main sub-pixels Pm in the main display area MDA and a plurality of auxiliary sub-pixels Pa in the component area CA.

2 FIG. 40 40 40 40 40 40 40 As described later with reference to, a component, that is, an electronic element, may be under the display panel to correspond to the component area CA. The componentmay include a camera using an infrared ray or a visible ray, and may include an imaging device. Alternatively, the componentmay include a solar battery, a flash, an illuminance sensor, a proximity sensor, or an iris sensor. Alternatively, the componentmay have a function of receiving sound. In order to reduce a restriction in functions of the component, the component area CA may include a transmission area TA through which light and/or sound output from the componentto the outside or proceeding from the outside toward the componentmay pass. In the display panel or the display apparatus including the display panel according to an embodiment, when the light passes through the component area CA, a light transmittance may be about 10% or greater, for example, 40% or greater, 25% or greater, 50% or greater, 85% or greater, or 90% or greater.

The plurality of auxiliary sub-pixels Pa may be in the component area CA. The plurality of auxiliary sub-pixels Pa emit light to provide a certain image. An image displayed on the component area CA is an auxiliary image, and may have a lower resolution than that of the image displayed on the main display area MDA. That is, the component area CA may include the transmission area TA through which the light and sound may transmit, and when there is no sub-pixel in the transmission area TA, the number of auxiliary sub-pixels Pa per unit area may be less than the number of main sub-pixels Pm per unit area in the main display area MDA.

2 2 FIGS.A toD 1 are cross-sectional views partially illustrating the display apparatusaccording to one or more embodiments.

2 FIG.A 1 10 40 10 10 10 Referring to, the display apparatusmay include a display paneland the componentoverlapping the display panel. A cover window (not illustrated) configured to protect the display panelmay be further above the display panel.

10 40 10 100 100 100 The display panelincludes the component area CA that is a region overlapping the componentand the main display area MDA displaying main images. The display panelmay include a substrate, a display layer DISL on the substrate, a touch screen layer TSL, an optical functional layer OFL, and a panel protective member PB under the substrate.

100 The display layer DISL may include a circuit layer PCL including thin film transistors TFTm and TFTa, a display element layer including light-emitting elements EDm and EDa that are display elements, and an encapsulation member ENCM such as a thin film encapsulation layer TFEL or a sealing substrate (not illustrated). Insulating layers IL and IL′ may be between the substrateand the display layer DISL, and in the display layer DISL.

100 100 The substratemay include an insulating material, such as glass, quartz, and polymer resin. The substratemay include a rigid substrate or a flexible substrate that may be bendable, foldable, and rollable.

10 A main pixel circuit PCm and a main light-emitting element EDm connected to the main pixel circuit PCm may be in the main display area MDA of the display panel. The main pixel circuit PCm includes at least one thin film transistor TFTm and may control light emission from the main light-emitting element EDm. The main sub-pixel Pm may be implemented by light emission of the main light-emitting element EDm.

10 The auxiliary light-emitting element EDa is in the component area CA of the display panelto implement the auxiliary sub-pixel Pa. In the embodiment, the auxiliary pixel circuit PCa driving the auxiliary light-emitting element EDa may not be in the component area CA, but in the peripheral area DPA that is a non-display area. In another embodiment, the auxiliary pixel circuit PCa may be partially in the main display area MDA or may be between the main display area MDA and the component area CA. That is, the auxiliary pixel circuit PCa may be provided not to overlap the auxiliary light-emitting element EDa.

The auxiliary pixel circuit PCa may include at least one thin film transistor TFTa and may be electrically connected to the auxiliary light-emitting element EDa via a connecting line TWL. The connecting line TWL may include a transparent conductive material. The auxiliary pixel circuit PCa may control the light emission from the auxiliary light-emitting element EDa. The auxiliary sub-pixel Pa may be implemented by the light emission from the auxiliary light-emitting element EDa. In the component area CA, a region where the auxiliary light-emitting element EDa is provided may be referred to as an auxiliary display area ADA.

40 40 Also, in the component area CA, a region where the auxiliary light-emitting element EDa that is a display element is not provided may be referred to as a transmission area TA. The transmission area TA may be a region through which light/signal emitted from the componentor light/a signal incident in the componentthat corresponds to the component area CA may transmit. The auxiliary display area ADA and the transmission area TA may be alternately arranged in the component area CA. The connecting line TWL connecting the auxiliary pixel circuit PCa to the auxiliary light-emitting element EDa may be in the transmission area TA. The connecting line TWL may include a transparent conductive material having a high transmittance, and thus, even when the connecting line TWL is in the transmission area TA, the transmittance of the transmission area TA may be secured.

In the embodiment, because the auxiliary pixel circuit PCa is not in the component area CA, an area of the transmission area TA may be ensured and the light transmittance may be further improved.

2 FIG. 131 132 132 131 133 The main light-emitting device EDm and the auxiliary light-emitting device EDa that are the display elements may be covered by a thin film encapsulation layer TFEL or an encapsulation substrate. In one or more embodiments, the thin film encapsulation layer TFEL may include at least one inorganic encapsulation layer and at least one organic encapsulation layer as illustrated in. In an embodiment, the thin film encapsulation layer TFEL may include first and second inorganic encapsulation layersandand an organic encapsulation layerbetween the first and second inorganic encapsulation layersand.

131 133 132 2 x y 2 3 2 2 5 2 2 The first and second inorganic encapsulation layersandmay each include one or more inorganic insulating materials such as silicon oxide (SiO), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (AlO), titanium oxide (TiO), tantalum oxide (TaO), hafnium oxide (HfO), and zinc oxide (ZnO), and may be formed by a chemical vapor deposition (CVD) method, etc. The organic encapsulation layermay include a polymer-based material. The polymer-based material may include a silicon-based resin, an acryl-based resin, an epoxy-based resin, polyimide, polyethylene, etc.

131 132 133 The first inorganic encapsulation layer, the organic encapsulation layer, and the second inorganic encapsulation layermay be integrally provided to cover the main display area MDA and the component area CA.

100 100 When the main light-emitting device EDm and the auxiliary light-emitting device EDa that are the display elements are encapsulated by the encapsulation substrate (not illustrated), the encapsulation substrate may face the substratewith the display elements therebetween. There may be a gap between the encapsulation substrate and the display element. The encapsulation substrate may include glass. A sealant including frit, etc. may be between the substrateand the encapsulation substrate, and the sealant may be in the peripheral area DPA. The sealant in the peripheral area DPA may surround the display area DA to prevent the moisture from infiltrating through the side surfaces of the display panel.

The touch screen layer TSL may obtain coordinate information according to an external input, e.g., a touch event. The touch screen layer TSL may include a touch electrode and touch lines connected to the touch electrode. The touch screen layer TSL may sense an external input according to a self-capacitance method or a mutual capacitance method.

The touch screen layer TSL may be on the thin film encapsulation layer TFEL. Alternatively, the touch screen layer TSL may be separately formed on a touch substrate, and then may be coupled onto the thin film encapsulation layer TFEL via an adhesive layer such as an optical clear adhesive (OCA). In an embodiment, the touch screen layer TSL may be directly on the thin film encapsulation layer TFEL, and in this case, the adhesive layer may not be provided between the touch screen layer TSL and the thin film encapsulation layer TFEL.

1 The optical functional layer OFL may include an anti-reflection layer. The anti-reflection layer may reduce a reflectivity of light (external light) incident into the display apparatusfrom the outside.

In some embodiments, the optical functional layer OFL may include a polarization film. The optical functional layer OFL may include an opening OFL_OP corresponding to the transmission area TA. Accordingly, the light transmittance of the transmission area TA may be noticeably improved. A transparent material such as an optically clear resin (OCR) may be filled in the opening OFL_OP.

In some embodiments, the optical functional layer OFL may include a filter plate including a black matrix and color filters.

100 100 The panel protective member PB is attached to a lower portion of the substratein order to support and protect the substrate. The panel protective member PB may include an opening PB_OP corresponding to the component area CA. When the panel protective member PB includes the opening PB_OP, the light transmittance of the component area CA may be improved. The panel protective member PB may include polyethylene terephthalate (PET) or polyimide (PI).

40 An area of the component area CA may be greater than an area of a region in which the componentis arranged. Accordingly, an area of the opening PB_OP in the panel protective member PB may not be equal to that of the component area CA.

40 40 40 Also, a plurality of componentsmay be in the component area CA. The plurality of componentsmay have different functions from one another. For example, the plurality of componentsmay include at least two of a camera (imaging device), a solar battery, a flash, a proximity sensor, an illuminance sensor, and an iris sensor.

2 FIG.A 2 FIG.B 1 In, there is not illustrated a bottom metal layer BML under the auxiliary light-emitting element EDa of the component area CA, but as illustrated in, the display apparatusaccording to the embodiment may include the bottom metal layer BML.

100 100 The bottom metal layer BML may be disposed between the substrateand the auxiliary light-emitting element EDa to overlap the auxiliary light-emitting element EDa. The bottom metal layer BML may be disposed within the insulating layer IL′ and in contact with an upper layer of the substrate. The bottom metal layer BML may block the external light from reaching the auxiliary light-emitting element EDa. In addition, the bottom metal layer BML may entirely correspond to the component area CA, and may include a lower hole corresponding to the transmission area TA. In this case, the lower hole may be provided in various shapes, e.g., a polygonal shape, a circular shape, or a non-defined shape, so as to adjust a refractive characteristic of the external light.

2 FIG.A 2 FIG.C Also,illustrates that the optical functional layer OFL includes the opening OFL_OP corresponding to the transmission area TA, but as illustrated in, the optical functional layer OFL may include an opening OFL_OP′ corresponding to the component area CA. A transparent material such as an optically clear resin (OCR) may be filled in the opening OFL_OP′.

2 FIG.D In another embodiment, as illustrated in, the optical functional layer OFL may not include an opening, and the body of the optical functional layer OFL may be continuously provided on the component area CA entirely.

3 3 FIGS.A andB 1 FIG. 10 1 are plan views of a display panelthat may be included in the display apparatusof.

3 FIG.A 10 100 100 Referring to, various elements of the display panelare on the substrate. The substrateincludes the display area DA and the peripheral area DPA surrounding the display area DA. The display area DA includes the main display area MDA displaying a main image, and the component area CA having the transmission area TA and displaying an auxiliary image. The auxiliary image may form one total image with a main image or may be an image independent from the main image.

A plurality of main sub-pixels Pm are arranged in the main display area MDA. Each of the plurality of main sub-pixels Pm may be implemented as a display element, such as an organic light-emitting diode OLED. The main pixel circuit PCm driving the main sub-pixel Pm is in the main display area MDA, and the main pixel circuit PCm may overlap the main sub-pixel Pm. Each of the main sub-pixels Pm may emit, for example, red light, green light, blue light, or white light. The main display area MDA is covered by an encapsulation member to be protected from external air or moisture.

The component area CA may be at a side of the main display area MDA as described above, or may be in the display area DA to be surrounded by the main display area MDA. A plurality of auxiliary sub-pixels Pa are arranged in the component area CA. Each of the auxiliary sub-pixels Pa may include a display element such as an organic light-emitting diode. The auxiliary pixel circuit PCa driving the auxiliary sub-pixel Pa may be in the peripheral area DPA that is adjacent to the component area CA. For example, when the component area CA is on an upper side of the display area DA, the auxiliary pixel circuit PCa may be on the upper side of the peripheral area DPA. The display elements included in the auxiliary pixel circuit PCa and the auxiliary sub-pixel Pa may be connected to each other via the connecting line TWL extending in the y-direction.

Each of the auxiliary sub-pixels Pa may emit, for example, red light, green light, blue light, or white light. The component area CA is covered by an encapsulation member to be protected from external air or moisture.

In addition, the component area CA may include the transmission area TA. The transmission area TA may surround the plurality of auxiliary sub-pixels Pa. Alternatively, the transmission area TA may be arranged as gratings with the plurality of auxiliary sub-pixels Pa.

Because the component area CA has the transmission area TA, a resolution of the component area CA may be less than that of the main display area MDA. For example, the resolution of the component area CA may be about ½, ⅜, ⅓, ¼, 2/9, ⅛, 1/9, 1/16, etc. of the resolution of the main display area MDA. For example, the main display area MDA may have a resolution of about 400 ppi, and the component area CA may have a resolution of about 200 ppi or about 100 ppi.

1 2 11 13 Each of the pixel circuits driving the sub-pixels Pm and Pa may be electrically connected to external circuits in the peripheral area DPA. A first scan driving circuit SDRV, a second scan driving circuit SDRV, a terminal portion PAD, a driving voltage supply line, and a common voltage supply linemay be in the peripheral area DPA.

1 1 2 1 1 1 2 The first scan driving circuit SDRVmay apply a scan signal to each of the main pixel circuits PCm that drive the main sub-pixels Pm via a main scan line SLm. The first scan driving circuit SDRVmay apply an emission control signal to each of the pixel circuits PCm via a main emission control line ELm. The second scan driving circuit SDRVmay be opposite to the first scan driving circuit SDRVbased on the main display area MDA, and may be in parallel with the first scan driving circuit SDRV. Some of the pixel circuits of the main sub-pixels Pm in the main display area MDA may be electrically connected to the first scan driving circuit SDRV, and the other pixel circuits may be electrically connected to the second scan driving circuit SDRV.

100 30 32 30 The terminal portion PAD may be at a side of the substrate. The terminal portion PAD is not covered by the insulating layer, but is exposed to be connected to a display circuit board. A display drivermay be on the display circuit board.

32 1 2 32 The display drivermay generate control signals that are to be transferred to the first scan driving circuit SDRVand the second scan driving circuit SDRV. The display drivermay generate a data signal, and the data signal may be transferred to the main pixel circuits PCm via a fan-out wire FW and a main data line DLm connected to the fan-out wire FW.

32 11 13 11 13 Also, the display drivermay supply a driving voltage ELVDD to the driving voltage supply lineand may supply a common voltage ELVSS to the common voltage supply line. The driving voltage ELVDD may be applied to pixel circuits of the main and auxiliary sub-pixels Pm and Pa via the driving voltage line PL connected to the driving voltage supply line, and the common voltage ELVSS may be applied to an opposite electrode of the display element via the common voltage supply line.

11 13 The driving voltage supply linemay extend in the x-direction under the main display area MDA. The common voltage supply linemay have a loop shape having one open side to partially surround the main display area MDA.

3 FIG.A illustrates one component area CA, but a plurality of component areas CA may be provided. In this case, the plurality of component areas CA are separated from one another, and a first camera may correspond to one component area CA and a second camera may correspond to another component area CA. Alternatively, a camera may correspond to one component area CA and an infrared ray sensor may correspond to another component area CA. Shapes and sizes of the plurality of component areas CA may be different from one another.

In addition, the component area CA may have a circular shape, an elliptical shape, a polygonal shape, or a non-defined shape. In some embodiments, the component area CA may have an octagonal shape. The component area CA may have various polygonal shapes, e.g., a rectangular shape, a hexagonal shape, etc. The component area CA may be surrounded by the main display area MDA.

3 FIG.A 3 FIG.B Also, in, the auxiliary pixel circuit PCa is arranged adjacent to an outer side of the component area CA, but one or more embodiments are not limited thereto. As illustrated in, the auxiliary pixel circuit PCa may be arranged adjacent to an outer side of the main display area MDA. In some embodiments, the connecting line TWL may be connected to the auxiliary pixel circuit PCa via a metal connecting line TWL′. In this case, the connecting line TWL may be in the component area CA, and the metal connecting line TWL′ may be in the peripheral area DPA. The connecting line TWL may include a transparent conductive material, and the metal connecting line TWL′ may include highly conductive metal. In some embodiments, the metal connecting line TWL′ may be at the same layer as that of the connecting line TWL. In another embodiment, the metal connecting line TWL′ may be at a different layer from that of the connecting line TWL and may be connected to the connecting line TWL via a contact hole.

4 FIG. 4 FIG. is a plan layout illustrating a region of a display panel according to an embodiment. In detail,illustrates the component area CA, the main display area MDA around the component area CA, and a part of the peripheral area DPA.

4 FIG. Referring to, a plurality of main sub-pixels Pm may be in the main display area MDA. In the specification, the sub-pixel is a minimum unit configured to realize an image and denotes a light-emitting region from which light is emitted by a display element. When an organic light-emitting diode is used as a display element, the light-emitting region may be defined by the opening of a pixel defining layer. This will be described later. Each of the plurality of main sub-pixels Pm may emit one of red light, green light, blue light, and white light.

In some embodiments, the main sub-pixels Pm in the main display area MDA may include a first sub-pixel Pr, a second sub-pixel Pg, and a third sub-pixel Pb. The first sub-pixel Pr, the second sub-pixel Pg, and the third sub-pixel Pb may respectively emit red light, green light, and blue light. The main sub-pixels Pm may be arranged in a Pentile structure.

For example, from among vertices of a virtual square having a central point of the second sub-pixel Pg as a central point of the square, the first sub-pixel Pr is at first and third vertices and the third sub-pixel Pb may be at second and fourth vertices. A size of the second sub-pixel Pg may be less than those of the first sub-pixel Pr and the third sub-pixel Pb.

This pixel arrangement structure is referred to as a Pentile matrix structure or a Pentile structure. By applying rendering, in which a color of a pixel is represented by sharing the colors of its adjacent pixels, a high resolution may be obtained via a small number of pixels.

4 FIG. illustrates that the plurality of main sub-pixels Pm are arranged in the Pentile matrix structure, but one or more embodiments are not limited thereto. For example, the plurality of main sub-pixels Pm may be arranged in various shapes, e.g., a stripe structure, a mosaic arrangement structure, a delta arrangement structure, etc.

In the main display area MDA, the main pixel circuits PCm may overlap the main sub-pixels Pm, and the main pixel circuits PCm may be arranged in the form of a matrix in the x and y directions. In the specification, the main pixel circuit PCm denotes a unit of a pixel circuit included in one main sub-pixel Pm.

A plurality of auxiliary sub-pixels Pa may be in the component area CA. Each of the plurality of main sub-pixels Pm may emit one of red light, green light, blue light, and white light. The auxiliary sub-pixels Pa may include a first sub-pixel Pr′, a second sub-pixel Pg′, and a third sub-pixel Pb′. The first sub-pixel Pr′, the second sub-pixel Pg′, and the third sub-pixel Pb′ may emit red light, green light, and blue light.

4 FIG. The number of auxiliary sub-pixels Pa per unit area in the component area CA may be less than the number of main sub-pixels Pm per unit area in the main display area MDA. For example, the number of auxiliary sub-pixels Pa and the number of main sub-pixels Pm in the same area may be in a ratio of 1:2, 1:4, 1:8, or 1:9. That is, a resolution of the component area CA may be ½, ¼, ⅛, or 1/9 of a resolution of the main display area MDA.illustrates an example in which the component area CA has a resolution that is about ⅛ of the resolution of the main display area MDA.

The auxiliary sub-pixels Pa in the component area CA may be arranged in various shapes. Some of the auxiliary sub-pixels Pa may be grouped as a pixel group, and in the pixel group, the auxiliary sub-pixels Pa may be arranged in various shapes, e.g., a stripe structure, a mosaic arrangement structure, and a delta arrangement structure, etc. Here, a distance between the auxiliary sub-pixels Pa in the pixel group may be equal to a distance between the main sub-pixels Pm.

4 FIG. Alternatively, as illustrated in, the auxiliary sub-pixels Pa may be distributed in the component area CA. That is, the distance between the auxiliary sub-pixels Pa may be greater than that between the main sub-pixels Pm. In addition, a region where the auxiliary sub-pixels Pa are not provided in the component area CA may be the transmission area TA having high light transmittance.

The auxiliary pixel circuits PCa realizing the light emission from the auxiliary sub-pixels Pa may be in the peripheral area DPA. Because the auxiliary pixel circuits PCa are not in the component area CA, the component area CA may have a relatively large transmission area TA, which may be referred to as a wide transmission area. Also, lines applying a constant voltage and signals to the auxiliary pixel circuits PCa are not in the component area CA, and thus the auxiliary sub-pixels Pa may be freely arranged without considering the arrangement of the lines.

The auxiliary pixel circuits PCa may be connected to the auxiliary sub-pixels Pa via the connecting lines TWL and/or the metal connecting lines TWL′.

2 3 The connecting line TWL is at least partially in the component area CA and may include a transparent conductive material. For example, the connecting line TWL may include a transparent conducting oxide (TCO). For example, the connecting line TWL may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (InO), indium gallium oxide, or aluminum zinc oxide (AZO).

That the connecting line TWL is connected to the auxiliary sub-pixel Pa may denote that the connecting line TWL is electrically connected to the pixel electrode of the display element included in the auxiliary sub-pixel Pa.

The connecting line TWL may be connected to the auxiliary pixel circuits PCa via the metal connecting line TWL′. The metal connecting line TWL′ may be in the peripheral area DPA and connected to the auxiliary pixel circuit PCa.

The metal connecting line TWL′ may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may have a single-layered or multi-layered structure. A plurality of metal connecting lines TWL′ may be among the auxiliary pixel circuits PCa.

1 2 1 2 1 2 121 121 2 5 FIG. 5 FIG. In some embodiments, the metal connecting line TWL′ may include a first metal connecting line TWL′ and a second metal connecting line TWL′ at different layers. For example, the first metal connecting line TWL′ may be at the same layer as the data line DL and may include the same material as that of the data line DL. The second metal connecting line TWL′ and the first metal connecting line TWL′ may be arranged with an insulating layer therebetween. For example, the second metal connecting line TWL′ may be at the same layer as a pixel electrode(see) of the organic light-emitting diode OLED and may include the same material as that of the first pixel electrode. Alternatively, the second metal connecting line TWL′ may be at the same layer as a connecting electrode CM (see) and may include the same material as that of the connecting electrode CM.

1 2 1 2 1 2 The first metal connecting line TWL′ and the second metal connecting line TWL′ may be between the auxiliary pixel circuits PCa and at least partially curved on a plane. In some embodiments, there may be a plurality of first metal connecting lines TWL′ and a plurality of second metal connecting lines TWL′ at different layers, and the first metal connecting lines TWL′ and the second metal connecting lines TWL′ may be alternately arranged in spaces among the plurality of pixel circuits PCa.

The connecting line TWL may be in the component area CA and may be connected to the metal connecting line TWL′ at an edge of the component area CA. The connecting line TWL may include a transparent conductive material.

4 FIG. Referring to a partially enlarged view of, an insulating line INL overlapping the connecting line TWL may be on and/or under the connecting line TWL. In some embodiments, the insulating line INL may be patterned to correspond to the connecting line TWL. There are a plurality of insulating lines INL, and the plurality of insulating lines INL may be spaced apart from one another in an x-direction and may extend in a y-direction.

1 In some embodiments, the insulating line INL may be disposed between the connecting line TWL and the metal connecting line TWL′. In this case, the connecting line TWL may be connected to the metal connecting line TWL′ via a contact hole CNT in the insulating line INL.

116 When the insulating line INL is on the connecting line TWL, the connecting line TWL may be on the first organic insulating layer, that is, at the same layer as that of the metal connecting line TWL′. In this case, an end portion of the connecting line TWL may cover an end portion of the metal connecting line TWL′.

The metal connecting line TWL′ may have a higher conductivity than that of the connecting line TWL. Because the metal connecting line TWL′ is in the peripheral area DPA, there is no need to ensure light transmittance. Thus, the additional connecting line TWL′ may include a material having lower light transmittance and higher conductivity than those of the connecting line TWL. Accordingly, a resistance of the connecting line TWL may be reduced.

2 1 3 FIG.A 3 FIG.A The scan line SL may include a main scan line SLm connected to the main pixel circuits PCm and an auxiliary scan line SLa connected to the auxiliary pixel circuits PCa. The main scan line SLm extends in the x-direction to be connected to the main pixel circuits PCm on a same row. The main scan line SLm may not be in the component area CA. That is, the main scan line SLm may be disconnected at the component area CA. In this case, the main scan line SLm at a left side of the component area CA may receive a signal from the first scan driving circuit SDRV(see), and the main scan line SLm at a right side of the component area CA may receive a signal from the first scan driving circuit SDRV(see).

The auxiliary scan line SLa may be connected to the auxiliary pixel circuits PCa that drive the auxiliary sub-pixels Pa in the same row, from among the auxiliary pixel circuits PCa in the same row.

The main scan line SLm and the auxiliary scan line SLa are connected to a scan connecting line SWL, and thus, a same signal may be applied to the pixel circuits driving the main sub-pixel Pm and the auxiliary sub-pixel Pa in the same row.

The scan connecting line SWL may be at a different layer from the main scan line SLm and the auxiliary scan line SLa, and thus, the scan connecting line SWL may be connected to the main scan line SLm and the auxiliary scan line SLa respectively via contact holes. The scan connecting line SWL may be in the peripheral area DPA.

The data line DL may include a main data line DLm connected to the main pixel circuits PCm and an auxiliary data line DLa connected to the auxiliary pixel circuits PCa. The main data line DLm extends in the y-direction and may be connected to the main pixel circuits PCm in the same column. The auxiliary data line DLa extends in the y-direction and may be connected to the auxiliary pixel circuits PCa in the same column.

The main data line DLm and the auxiliary data line DLa may be separated from each other with the component area CA therebetween. The main data line DLm and the auxiliary data line DLa are connected to a data connecting line DWL, and thus, a same signal may be applied to the pixel circuits driving the main sub-pixel Pm and the auxiliary sub-pixel Pa in the same column.

The data connecting line DWL may bypass the component area CA. The data connecting line DWL may overlap the main pixel circuits PCm in the main display area MDA. Because the data connecting line DWL is in the main display area MDA, an additional space configured to rearrange the data connecting line DWL may not be necessary, and thus, an area of a dead space may be reduced.

The data connecting line DWL may be at a different layer from the main data line DLm and the auxiliary data line DLa, and thus, the data connecting line DWL may be connected to the main data line DLm and the auxiliary data line DLa respectively via contact holes.

5 FIG. 5 FIG. 4 FIG. 10 is a cross-sectional view illustrating a portion of the display panelaccording to the embodiment, and partially illustrates the main display area MDA, the component area CA, and the peripheral area DPA. In, some parts of the component area CA and the peripheral area DPA correspond to the cross-sectional view taken along line II-II′ of.

5 FIG. Referring to, the main sub-pixels Pm are in the main display area MDA, and the component area CA includes the auxiliary sub-pixels Pa and the transmission area TA. The main pixel circuit PCm including the main thin film transistor TFT and the main storage capacitor Cst and the main organic light-emitting diode OLED that is a main display element connected to the main pixel circuit PCm may be in the main display area MDA. An auxiliary organic light-emitting diode OLED′ may be in the component area CA as an auxiliary display element. The auxiliary pixel circuit PCa including an auxiliary thin film transistor TFT′ and the auxiliary storage capacitor Cst′ may be in the peripheral area DPA. In addition, the connecting line TWL to connect the auxiliary pixel circuit PCa to the auxiliary organic light-emitting diode OLED′ may be in the component area CA and the peripheral area DPA.

116 117 100 116 117 In the component area CA, a first organic insulating layerand a second organic insulating layerare stacked between the substrateand the auxiliary organic light-emitting diode OLED′, and the connecting line TWL may be between the first organic insulating layerand the second organic insulating layer.

In the embodiment, the insulating line INL may be disposed on and/or under the connecting line TWL while overlapping the connecting line TWL in the component area CA in the z-direction. The insulating line INL is in direct contact with the connecting line TWL, and may be patterned to correspond to the connecting line TWL.

116 116 5 FIG. In some embodiment, the insulating line INL may be disposed between the first organic insulating layerand the connecting line TWL as illustrated in. That is, the insulating line INL may be in direct contact with the connecting line TWL under the connecting line TWL. The insulating line INL may have a tapered shape extending between the connecting line TWL and the first organic insulating layer.

116 116 In this case, a refractive index n′ of the insulating line INL may have a value between a refractive index n1 of the first organic insulating layerand a refractive index n0 of the connecting line TWL. For example, the refractive index n′ of the insulating line INL may be greater than the refractive index n1 of the first organic insulating layerand may be less than the refractive index n0 of the connecting line TWL. (n0>n′>n1)

116 In some embodiments, the refractive index n0 of the connecting line TWL may be about 1.9 to about 2.1 with respect to a wavelength of 550 nm. The refractive index n′ of the insulating line INL may be about 1.6 to about 1.8. The refractive index n1 of the first organic insulating layermay be about 1.4 to about 1.6 with respect to the wavelength of 550 nm.

As a difference between the refractive index of the connecting line TWL and the refractive index of the insulating layers arranged under the connecting line TWL increases, a light diffraction intensity of the connecting line TWL may increase. In the embodiment, the insulating line INL having a material of a refractive index that is lower from that of the connecting line TWL is under the connecting line TWL, and thus, the light diffraction may be reduced.

117 116 117 116 116 117 117 116 117 116 117 116 In some embodiments, the second organic insulating layermay have the same material as that of the first organic insulating layer. In another embodiment, the second organic insulating layermay have a different material from that of the first organic insulating layer. For example, the first organic insulating layermay include photosensitive polyimide and the second organic insulating layermay include a siloxane-based resin. In this case, a light transmittance of the second organic insulating layermay be greater than that of the first organic insulating layer. Also, a flatness of an upper surface of the second organic insulating layermay be greater than that of an upper surface of the first organic insulating layer. That is, the upper surface of the second organic insulating layermay be flatter than the upper surface of the first organic insulating layer.

116 117 116 When there is the first organic insulating layerin the component area CA, there may be a loss in a total light transmittance and flatness, and thus, the second organic insulating layerhaving greater light transmittance and flatness than those of the first organic insulating layermay be adopted to reduce the light diffraction and to improve the light transmittance and flatness.

In the embodiment, the organic light-emitting diode is adopted as the display element, but in another embodiment, an inorganic light-emitting diode or a quantum dot light-emitting diode may be adopted as the display element.

10 10 100 111 Hereinafter, a structure in which the elements in the display panelare stacked will be described below. The display panelmay include a substrate, a buffer layer, a circuit layer PCL, and a display element layer EDL that are stacked.

100 100 The substratemay include an insulating material, such as glass, quartz, and polymer resin. The substratemay include a rigid substrate or a flexible substrate that may be bendable, foldable, and rollable.

111 100 100 100 111 100 111 111 2 The buffer layeris on the substrateto reduce or block infiltration of impurities, moisture, or external air from a lower portion of the substrate, and to provide a flat surface on the substrate. The buffer layermay include an inorganic material such as an oxide material or a nitride material, an organic material, or an inorganic-organic composite material, and may have a single-layered or multi-layered structure including the inorganic material and the organic material. A barrier layer (not illustrated) configured to prevent infiltration of external air may be further provided between the substrateand the buffer layer. In some embodiments, the buffer layermay include silicon oxide (SiO) or silicon nitride (SiNx).

111 112 113 115 116 117 The circuit layer PCL is on the buffer layerand may include the main and auxiliary pixel circuits PCm and PCa, a first gate insulating layer, a second gate insulating layer, an interlayer insulating layer, the first organic insulating layer, and the second organic insulating layer. The main pixel circuit PCm may include the main thin film transistor TFT and the main storage capacitor Cst, and the auxiliary pixel circuit PCa may include the auxiliary thin film transistor TFT′ and the auxiliary storage capacitor Cst′.

111 1 1 1 1 The main thin film transistor TFT and the auxiliary thin film transistor TFT′ may be on the buffer layer. The main thin film transistor TFT includes the first semiconductor layer A, the first gate electrode G, the first source electrode S, and the first drain electrode D. The main thin film transistor TFT is connected to a main organic light-emitting diode OLED and may drive the main organic light-emitting diode OLED. The auxiliary thin film transistor TFT′ is connected to the auxiliary organic light-emitting diode OLED′ and may drive the auxiliary organic light-emitting diode OLED′. The auxiliary thin film transistor TFT′ has a similar configuration to that of the main thin film transistor TFT, and thus, descriptions about the main thin film transistor TFT may apply to the description about the auxiliary thin film transistor TFT′.

1 111 1 1 1 The first semiconductor layer Ais on the buffer layer, and may include polysilicon. In another embodiment, the first semiconductor layer Amay include amorphous silicon. In another embodiment, the first semiconductor layer Amay include an oxide of at least one selected from the group consisting of indium (In), gallium (Ga), stannum (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chrome (Cr), titanium (Ti), and zinc (Zn). The first semiconductor layer Amay include a channel region, and a source region and a drain region doped with impurities.

112 1 112 112 2 x x y 2 3 2 2 5 2 2 The first gate insulating layermay cover the first semiconductor layer A. The first gate insulating layermay include an inorganic insulating material such as silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), aluminum oxide (AlO), titanium oxide (TiO), tantalum oxide (TaO), hafnium oxide (HfO), and zinc oxide (ZnO). The first gate insulating layermay have a single-layered or a multi-layered structure including the inorganic insulating material.

1 112 1 1 1 The first gate electrode Gis on the first gate insulating layerto overlap the first semiconductor layer A. The first gate electrode Gmay include molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may have a single-layered or multi-layered structure. As an example, the first gate electrode Gmay have a single Mo layer.

113 1 113 113 2 x x y 2 3 2 2 5 2 2 The second gate insulating layermay cover the first gate electrode G. The second gate insulating layermay include an inorganic insulating material such as silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), aluminum oxide (AlO), titanium oxide (TiO), tantalum oxide (TaO), hafnium oxide (HfO), and zinc oxide (ZnO). The second gate insulating layermay have a single-layered or a multi-layered structure including the inorganic insulating material.

2 2 113 An upper electrode CEof the main storage capacitor Cst and the upper electrode CE′ of the auxiliary storage capacitor Cst′ may be on the second gate insulating layer.

2 1 1 2 113 1 1 In the main display area MDA, the upper electrode CEof the main storage capacitor Cst may overlap the first gate electrode Gthereunder. The first gate electrode Gand the upper electrode CEoverlapping each other with the second gate insulating layertherebetween may configure the main storage capacitor Cst. The first gate electrode Gmay be a lower electrode CEof the main storage capacitor Cst.

2 1 In the peripheral area DPA, the upper electrode CE′ of the auxiliary storage capacitor Cst′ may overlap the gate electrode of the auxiliary thin film transistor TFT′ thereunder. The gate electrode of the auxiliary thin film transistor TFT′ may be a lower electrode CE′ of the auxiliary storage capacitor Cst′.

2 2 The upper electrodes CEand CE′ may each include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chrome (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and/or copper (Cu) in a single-layered or multi-layered structure.

115 2 2 115 115 2 x y 2 3 2 2 5 2 2 The interlayer insulating layermay cover the upper electrodes CEand CE′. The interlayer insulating layermay include an insulating material such as silicon oxide (SiO), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (AlO), titanium oxide (TiO), tantalum oxide (TaO), hafnium oxide (HfO), and zinc oxide (ZnO). The interlayer insulating layermay have a single-layered or a multi-layered structure including the inorganic insulating material.

1 1 115 1 1 1 1 The source electrode Sand the drain electrode Dmay be on the interlayer insulating layer. The source electrode Sand the drain electrode Dmay include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may have a single-layered or multi-layered structure including the above materials. For example, the source electrode Sand the drain electrode Dmay each have a multi-layered structure including Ti/Al/Ti.

10 112 113 115 1 1 111 100 1 112 113 115 1 1 111 116 The inorganic insulating layer IIL of the display panelmay include a hole or a groove corresponding to the component area CA. For example, when the first gate insulating layer, the second gate insulating layer, and the interlayer insulating layerare collectively referred to as the inorganic insulating layer IL, the interlayer insulating layer IL may include a first hole Hcorresponding to the transmission area TA. The first hole Hmay partially expose an upper surface of the buffer layeror the substrate. The first hole Hmay be formed when an opening of the first interlayer insulating layer, an opening of the second gate insulating layer, and an opening of the interlayer insulating layeroverlap one another, wherein the holes correspond to the component area CA. The openings may be separately formed through separate processes or simultaneously formed through the same process. When the openings are separately formed through separate processes, an internal surface of the first hole Hmay not be smoothly formed, but may have steps. Alternatively, the inorganic insulating layer IL may include a groove, not the first hole Hexposing the buffer layer. The first organic insulating layermay be filled in the hole or the groove of the inorganic insulating layer IL.

116 1 2 1 2 The first organic insulating layermay cover the source electrodes Sand Sand the drain electrodes Dand Dof the main display area MDA and the peripheral area DPA, and may fill the hole or groove of the inorganic insulating layer IL in the component area CA.

116 The first organic insulating layermay include photosensitive polyimide, polyimide, polystyrene (PS), polycarbonate (PC), a general universal polymer such as benzocyclobutene (BCB), hexamethyldisiloxane (HMDSO), polymethylmethacrylate (PMMA), or polystyrene (PS), polymer derivatives having phenol groups, acryl-based polymer, imide-based polymer, aryl ether-based polymer, amide-based polymer, fluoride-based polymer, p-xylene-based polymer, vinyl alcohol-based polymer, etc.

116 Alternatively, the first organic insulating layermay include a siloxane-based organic material. The siloxane-based organic material may include hexamethyldisiloxane, octamethyltrisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, and polydimethylsiloxanes.

116 116 The refractive index n1 of the first organic insulating layermay be about 1.4 to about 1.6 with respect to the wavelength of 550 nm. Connecting electrode CM, and various lines, e.g., data lines DWL, may be on the first organic insulating layer, and may be advantageous for high integration.

116 In addition, in the component area CA, the insulating line INL and the connecting line TWL may be stacked on the first organic insulating layer. The insulating line INL may be patterned to correspond to the connecting line TWL. When the insulating line INL is not patterned, but is formed entirely on the component area CA, the light transmittance of the component area CA may degrade. In the embodiment, because the insulating line INL is patterned, the light transmittance of the component area CA may be improved.

116 116 2 3 A refractive index n′ of the insulating line INL may have a value between a refractive index n1 of the first organic insulating layerand a refractive index n0 of the connecting line TWL. In some embodiments, the refractive index n′ of the insulating line INL may be about 1.6 to about 1.8. The insulating line INL may include an inorganic insulating material. For example, the insulating line INL may include silicon oxynitride (SiOxNy) (x>0, y>0), aluminum oxide (AlO), etc. The insulating line INL may buffer the light diffraction effect caused due to a difference between the refractive indices of the first organic insulating layerand the connecting line TWL.

The connecting line TWL connected to the auxiliary pixel circuit PCa may be on the insulating line INL. The connecting line TWL extends from the peripheral area DPA to the component area CA and may connect the auxiliary organic light-emitting diode OLED′ to the auxiliary pixel circuit PCa.

The connecting line TWL may be connected to the metal connecting line TWL′. The metal connecting line TWL′ is in the peripheral area DPA and may be connected to the auxiliary pixel circuit PCa, e.g., the auxiliary thin film transistor TFT′. The connecting line TWL may be in the transmission area TA of the component area CA. The connecting line TWL may be connected to the metal connecting line TWL′ via the contact hole CNT in the insulating line INL.

121 The metal connecting line TWL′ may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may have a single-layered or multi-layered structure. In some embodiments, the metal connecting line TWL′ may be at the same layer as that of the data line DL and may include the same material as that of the data line DL. However, one or more embodiments are not limited thereto. The metal connecting line TWL′ may be at various layers. For example, the metal connecting line TWL′ may be at the same layer as that of the first pixel electrode.

2 3 The connecting line TWL may include a transparent conductive material. For example, the connecting line TWL may include a transparent conducting oxide (TCO). The connecting line TWL may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (InO), indium gallium oxide, or aluminum zinc oxide (AZO). The refractive index of the connecting line TWL may be about 1.9 to about 2.1.

The metal connecting line TWL′ may have a higher conductivity than that of the connecting line TWL. Because the metal connecting line TWL′ is in the peripheral area DPA, there is no need to ensure light transmittance. Thus, the additional connecting line TWL′ may include a material having lower light transmittance and higher conductivity than those of the connecting line TWL.

117 116 117 121 121 117 The second organic insulating layermay be on the first organic insulating layer, so as to cover the connecting line TWL. The second organic insulating layermay have a flat upper surface so that a first pixel electrodeand a second pixel electrode′ that will be arranged thereon may be planarized. The second organic insulating layermay include a siloxane-based organic material having high light transmittance and flatness. The siloxane-based organic material may include hexamethyldisiloxane, octamethyltrisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, and polydimethylsiloxanes.

117 Alternatively, the second organic insulating layermay include photosensitive polyimide, polyimide, a general universal polymer (benzocyclobutene (BCB), hexamethyldisiloxane (HMDSO), polymethylmethacrylate (PMMA), or polystyrene (PS)), polymer derivatives having phenol groups, acryl-based polymer, imide-based polymer, aryl ether-based polymer, amide-based polymer, fluoride-based polymer, p-xylene-based polymer, or vinyl alcohol-based polymer.

117 121 121 116 The main and auxiliary organic light-emitting diodes OLED and OLED′ are on the second organic insulating layer. The first and second pixel electrodesand′ of the organic light-emitting diodes OLED and OLED′ may be connected to the main and auxiliary pixel circuits PCm and PCa via the connecting electrodes CM and CM′ on the first organic insulating layer.

121 121 121 121 121 121 121 121 2 3 2 3 The first pixel electrodeand the second pixel electrode′ may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (InO), indium gallium oxide, or aluminum zinc oxide (AZO). The first and second pixel electrodesand′ may each include a reflective layer including argentum (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), aurum (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chrome (Cr), or a compound thereof. For example, the first and second pixel electrodesand′ may each have a structure in which films including ITO, IZO, ZnO, or InOare on/under the above-mentioned reflective layer. In this case, the first and second pixel electrodesand′ may each have a stacked structure including ITO/Ag/ITO.

119 117 121 121 1 2 121 121 1 2 The pixel defining layeris on the second organic insulating layerand covers edges of the first and second pixel electrodesand′, and may include a first opening OPand a second opening OPrespectively exposing central portions of the first and second pixel electrodesand′. Sizes and shapes of light-emitting regions, that is, sub-pixels Pm and Pa, in the organic light-emitting diodes OLED and OLED′ are defined by the first opening OPand the second opening OP.

119 121 121 123 121 121 121 121 119 The pixel defining layerincreases a distance between an edge of the first and second pixel electrodesand′ and an opposite electrodeon the first and second pixel electrodesand′ to prevent generation of an arc at the edge of the first and second pixel electrodesand′. The pixel-defining layermay include an organic insulating material such as polyimide, polyamide, acrylic resin, benzocyclobutene, hexamethyldisiloxane (HMIDSO), and phenolic resin, and may be formed by spin coating.

122 122 121 121 1 2 119 122 122 b b b b A first emission layerand a second emission layer′ respectively corresponding to the first pixel electrodeand the second pixel electrode′ are in the first opening OPand the second opening OPof the pixel defining layer. The first emission layerand the second emission layer′ may respectively include a polymer material or a low-molecular material, and may emit red light, green light, blue light, or white light.

122 122 122 122 122 122 122 122 e b b e a c a c An organic functional layermay be on and/or under the first and second emission layersand′. The organic functional layermay include a first functional layerand/or a second functional layer. The first functional layeror the second functional layermay be omitted.

122 122 122 122 122 122 122 a b b a a a a The first functional layermay be under the first emission layerand the second emission layer′. The first functional layermay have a single-layered or multi-layered structure including an organic material. The first functional layermay include a hole transport layer (HTL) having a single-layered structure. Alternatively, the first functional layermay include a hole injection layer (HIL) and the HTL. The first functional layermay be integrally provided to correspond to the organic light-emitting diodes OLED and OLED′ in the main display area MDA and the component area CA.

122 122 122 122 122 122 c b b c c c The second functional layermay be on the first emission layerand the second emission layer′. The second functional layermay have a single-layered or multi-layered structure including an organic material. The second functional layermay include an electron transport layer (ETL) and/or an electron injection layer (EIL). The second functional layermay be integrally provided to correspond to the organic light-emitting diodes OLED and OLED′ in the main display area MDA and the component area CA.

123 122 123 123 123 123 c 2 3 The opposite electrodeis on the second functional layer. The opposite electrodemay include a conductive material having a low work function. For example, the opposite electrodemay include a (semi-)transparent layer including argentum (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), aurum (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. Alternatively, the opposite electrodemay further include a layer including ITO, IZO, ZnO, or InOon the (semi-)transparent layer including the above material. The opposite electrodemay be integrally provided to correspond to the organic light-emitting diodes OLED and OLED′ in the main display area MDA and the component area CA.

121 123 121 123 Layers from the first pixel electrodeand the opposite electrodein the main display area MDA may configure the main organic light-emitting diode OLED. Layers from the second pixel electrode′ to the opposite electrodein the component area CA may configure the auxiliary organic light-emitting diode OLED′.

150 123 150 123 150 123 150 150 An upper layerincluding an organic material may be on the opposite electrode. The upper layermay be provided to protect the opposite electrodeand to improve light extraction efficiency. The upper layermay include an organic material having a higher refractive index than that of the opposite electrode. Alternatively, the upper layermay include stacked layers having different refractive indices. For example, the upper layermay include a high refractive index layer/low refractive index layer/high refractive index layer. The high refractive index layer may have a refractive index of 1.7 or greater and the low refractive index layer may have a refractive index of 1.3 or less.

150 150 2 The upper layermay additionally include LiF. Alternatively, the upper layermay additionally include an inorganic insulating material such as silicon oxide (SiO) and silicon nitride (SiNx).

150 The thin film encapsulation layer TFEL is on the upper layersuch that the main and auxiliary organic light-emitting diodes OLED and OLED′ may be encapsulated by the thin film encapsulation layer TFEL. The thin film encapsulation layer TFEL may prevent external moisture or impurities from infiltrating into the organic light-emitting diodes OLED and OLED′.

5 FIG. 131 132 133 The thin film encapsulation layer TFEL may include at least one inorganic encapsulation layer and at least one organic encapsulation layer, and regarding this,illustrates a structure of the thin film encapsulation layer TFEL, in which a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layerare stacked. In another embodiment, a stacking order and the number of organic and inorganic encapsulation layers may vary.

131 133 132 131 132 133 2 2 3 2 2 5 2 2 The first and second inorganic encapsulation layersandmay each include one or more inorganic insulating materials such as silicon oxide (SiO), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (AlO), titanium oxide (TiO), tantalum oxide (TaO), hafnium oxide (HfO), and zinc oxide (ZnO), and may be formed by a chemical vapor deposition (CVD) method, etc. The organic encapsulation layermay include a polymer-based material. The polymer-based material may include a silicon-based resin, an acryl-based resin, an epoxy-based resin, polyimide, polyethylene, etc. The first inorganic encapsulation layer, the organic encapsulation layer, and the second inorganic encapsulation layermay be integrally provided to cover the main display area MDA and the component area CA.

6 6 FIGS.A andB 4 FIG. 6 6 FIGS.A andB 5 FIG. are cross-sectional views of the display panel taken along line I-I′ of. In, like reference numerals denote the same elements as those of.

6 FIG.A 111 116 117 100 116 116 100 117 116 Referring to, in the component area CA, the buffer layer, the first organic insulating layer, the insulating line INL, the connecting line TWL, and the second organic insulating layerare sequentially stacked on the substrate. In this case, a refractive index n′ of the insulating line INL may have a value between a refractive index n1 of the first organic insulating layerand a refractive index n0 of the connecting line TWL. For example, the refractive index n′ of the insulating line INL may be greater than the refractive index n1 of the first organic insulating layerand may be less than the refractive index n0 of the connecting line TWL. (n0>n′>n1) In addition, a refractive index n2 of the substrateand the second organic insulating layermay be the same as or similar to the refractive index n1 of the first organic insulating layer. (n2≈n1) Accordingly, the light diffraction effect due to the refractive index difference rarely occurs on the region where the connecting line TWL is not provided.

In the embodiment, the insulating line INL is under the connecting line TWL, and thus, the light diffraction of the light passing through the connecting line TWL may be reduced.

When the insulating line INL is disposed underneath the connecting line TWL, a thickness t0 of the connecting line TWL may be less than a thickness t1 of the insulating line INL. For example, the thickness t0 of the connecting line TWL may be about 40 nm to about 60 nm, and the thickness t1 of the insulating line INL may be about 80 nm to about 120 nm. In the above range, the light transmittance is the largest and the reflectivity is the smallest in the component area CA.

In addition, the connecting lines TWL and the insulating lines INL in the component area CA may be patterned in the same shapes. In some embodiments, a width W0 of a lower end of the connecting line TWL in the x-direction may be equal to a width W1 of an upper end of the insulating line INL in the x-direction. In some embodiments, a width of each of the connecting lines TWL and the insulating lines INL in the x-direction may be about 2 μm to about 6 μm. An interval between the connecting lines TWL and the insulating lines INL may be about 2 μm to about 6 μm.

6 FIG.A In, the width W0 of a lower end of the connecting line TWL in the x-direction may be equal to the width W1 of an upper end of the insulating line INL in the x-direction, but one or more embodiments are not limited thereto.

6 FIG.B 6 FIG.B As illustrated in, the width W0 of the connecting line TWL in the x-direction and the width W1 of the insulating line INL in the x-direction may be different from each other. For example, the width W1 of the insulating line INL in the x-direction may be greater than the width W0 of the connecting line TWL in the x-direction. Also, unlike the example of, the width W1 of the insulating line INL in the x-direction may be less than the width W0 of the connecting line TWL in the x-direction.

In addition, a center line of the connecting line TWL coincides with a center line of the insulating line INL in the drawing, but one or more embodiments are not limited thereto. The center line of the connecting line TWL may not match with the center line of the insulating line INL, but may be variously modified, e.g., may be biased to one side.

7 7 FIGS.A toC are cross-sectional views sequentially illustrating a method of manufacturing the insulating line INL and a transparent connecting line according to an embodiment.

7 FIG.A 116 116 Referring to, the insulating line INL is disposed on the first organic insulating layer. First, an inorganic insulating layer is entirely deposited on the first organic insulating layer, and then a photoresist is formed through a mask process and then etched to form the insulating line INL. Here, the insulating line INL may be obtained through a dry etching.

7 FIG.B 116 Next, referring to, a transparent conductive material layer P-TWL is deposited above the first organic insulating layerto cover the insulating line INL. Next, a photoresist is formed through a mask process and etched to form the connecting line TWL. Here, the connecting line TWL may be obtained through a wet etching.

7 FIG.C 117 116 Next, as illustrated in, the second organic insulating layeris applied above the first organic insulating layerso as to cover the insulating line INL and the connecting line TWL. In the manufacturing method according to the embodiment, the insulating line INL and the connecting line TWL are etched in different manners through separate photolithography processes, but one or more embodiments are not limited thereto. The insulating line INL and the connecting line TWL may be obtained by various methods, e.g., through one photo process.

8 FIG. 8 FIG. 5 FIG. 10 is a cross-sectional view partially illustrating the display panelaccording to an embodiment. In, like reference numerals as those ofdenote the same members, and detailed descriptions thereof are omitted.

8 FIG. 10 Referring to, the auxiliary organic light-emitting diode OLED′ is in the component area CA of the display panelas an auxiliary display element, and the auxiliary pixel circuits PCa each including the auxiliary thin film transistor TFT′ and the auxiliary storage capacitor Cst′ may be in the peripheral area DPA. In addition, the connecting line TWL that connects the auxiliary pixel circuit PCa to the auxiliary organic light-emitting diode OLED′ may be in the component area CA and the peripheral area DPA.

116 117 100 116 117 In the component area CA, a first organic insulating layerand a second organic insulating layerare stacked between the substrateand the auxiliary organic light-emitting diode OLED′, and the connecting line TWL may be between the first organic insulating layerand the second organic insulating layer.

The insulating line INL patterned to correspond to the shape of the connecting line TWL may be partially in the component area CA. The insulating line INL may be in direct contact with the connecting line TWL and may be on and/or under the connecting line TWL.

117 In the embodiment, the insulating line INL may be between the connecting line TWL and the second organic insulating layer. The insulating line INL may be in direct contact with the connecting line TWL on the connecting line TWL.

117 117 In this case, a refractive index n′ of the insulating line INL may have a value between the refractive index n0 of the connecting line TWL and the refractive index n2 of the second organic insulating layer. For example, the refractive index n′ of the insulating line INL may be greater than the refractive index n2 of the second organic insulating layerand may be less than the refractive index n0 of the connecting line TWL. (n0>n′>n2)

117 In some embodiments, the refractive index n0 of the connecting line TWL may be about 1.9 to about 2.1 with respect to a wavelength of 550 nm. The refractive index n′ of the insulating line INL may be about 1.6 to about 1.8. The refractive index n2 of the second organic insulating layermay be about 1.4 to about 1.6 with respect to the wavelength of 550 nm.

As a difference between the refractive index of the connecting line TWL and the refractive index of the insulating layers arranged under the connecting line TWL increases, a light diffraction intensity of the connecting line TWL may increase. In the embodiment, the insulating line INL having a material of a refractive index that is lower from that of the connecting line TWL is on the connecting line TWL, and thus, the light diffraction may be reduced. In addition, the insulating line INL is patterned to correspond to the connecting line TWL, and thus, the light transmittance of the component area CA may be increased.

117 116 117 116 117 116 116 117 2 3 In some embodiments, a light transmittance of the second organic insulating layermay be greater than that of the first organic insulating layer. In some embodiments, a flatness of an upper surface of the second organic insulating layermay be greater than that of an upper surface of the first organic insulating layer. That is, the upper surface of the second organic insulating layermay be flatter than the upper surface of the first organic insulating layer. In some embodiments, the first organic insulating layermay include photosensitive polyimide and the second organic insulating layermay include a siloxane-based resin. In some embodiments, the insulating line INL may include silicon oxynitride (SiOxNy) (x>0, y>0), aluminum oxide (AlO), etc.

9 9 FIGS.A toD 8 FIG. are cross-sectional views sequentially illustrating a method of manufacturing an insulating line and a connecting line according to the embodiment of, and illustrating a part of the component area CA.

9 FIG.A 116 Referring to, the transparent conductive material layer P-TWL and an inorganic insulating layer P-INL are sequentially deposited on the first organic insulating layer, and a photoresist pattern PR is formed through a mask process.

9 FIG.B Referring to, the inorganic insulating layer pINL is etched by using the photoresist pattern PR as a mask to form the insulating line INL. Here, the insulating line INL may be obtained through a dry etching.

9 FIG.C Next, as illustrated in, by using the photoresist pattern PR used to form the insulating line INL as a mask, the transparent conductive material layer P-TWL is etched to form the connecting line TWL. Here, the connecting line TWL may be obtained through a wet etching.

9 FIG.D 117 116 Next, referring to, the photoresist pattern PR is removed, and the second organic insulating layeris applied to cover the connecting line TWL and the insulating line INL on the first organic insulating layer.

As described above, when the insulating line INL is on the connecting line TWL, the insulating line INL and the connecting line TWL are etched by using the same photoresist PR, and thus, the insulating line INL may be obtained without additionally performing a mask process.

In addition, as in the embodiment, when the insulating line INL is on the connecting line TWL, the thickness t0 of the connecting line TWL may be less than the thickness t2 of the insulating line INL. For example, the thickness t0 of the connecting line TWL may be about 40 nm to about 60 nm, and the thickness t2 of the insulating line INL may be about 80 nm to about 120 nm. In the above range, the light transmittance is the largest and the reflectivity is the smallest in the component area CA.

10 FIG. 10 FIG. 5 FIG. 10 is a cross-sectional view partially illustrating the display panelaccording to an embodiment. In, like reference numerals as those ofdenote the same members, and detailed descriptions thereof are omitted.

10 FIG. 10 Referring to, the auxiliary organic light-emitting diode OLED′ is disposed in the component area CA of the display panelas an auxiliary display element, and the auxiliary pixel circuits PCa each including the auxiliary thin film transistor TFT′ and the auxiliary storage capacitor Cst′ may be in the peripheral area DPA. In addition, the connecting line TWL to connect the auxiliary pixel circuit PCa to the auxiliary organic light-emitting diode OLED′ may be in the component area CA and the peripheral area DPA.

116 117 100 116 117 In the component area CA, a first organic insulating layerand a second organic insulating layerare stacked between the substrateand the auxiliary organic light-emitting diode OLED′, and the connecting line TWL may be between the first organic insulating layerand the second organic insulating layer.

The insulating line INL patterned to overlap the connecting line TWL may be in the component area CA. The insulating line INL may be in direct contact with the connecting line TWL and may be on and/or under the connecting line TWL.

1 2 1 2 In the embodiment, the insulating line INL may include a first insulating line INLand a second insulating line INL. The first insulating line INLmay be under the connecting line TWL and the second insulating line INLmay be on the connecting line TWL.

1 116 2 117 1 2 The first insulating line INLmay be between the first organic insulating layerand the connecting line TWL, and the second insulating line INLmay be between the connecting line TWL and the second organic insulating layer. The first insulating line INLand the second insulating line INLmay be in direct contact with the connecting line TWL under and on the connecting line TWL.

1 116 2 117 1 2 116 2 A refractive index n1′ of the first insulating line INLmay have a value between a refractive index n1 of the first organic insulating layerand a refractive index n0 of the connecting line TWL. A refractive index n2′ of the second insulating line INLmay have a value between the refractive index n0 of the connecting line TWL and the refractive index n2 of the second organic insulating layer. For example, the refractive indices n1′ and n2′ of the first insulating line INLand the second insulating line INLmay be greater than the refractive index n1 of the first organic insulating layerand the refractive index n2 of the second insulating line INL, and may be less than the refractive index n0 of the connecting line TWL. (n0>n1′, n2′>n1, n2)

1 2 116 117 In some embodiments, the refractive index n0 of the connecting line TWL may be about 1.9 to about 2.1 with respect to a wavelength of 550 nm. The refractive indices n1′ and n2′ of the first and second insulating lines INLand INLmay be about 1.6 to about 1.8. The refractive index n1 of the first organic insulating layerand the refractive index n2 of the second organic insulating layermay be about 1.4 to about 1.6 with respect to the wavelength of 550 nm.

As a difference between the refractive index of the connecting line TWL and the refractive index of the insulating layers arranged under the connecting line TWL increases, a light diffraction intensity of the connecting line TWL may increase. In the embodiment, the insulating lines INL having a material of a refractive index that is lower from that of the connecting line TWL are disposed on and under the connecting line TWL, and thus, the light diffraction may be reduced. In addition, the insulating line INL is patterned to correspond to the connecting line TWL, and thus, the light transmittance of the component area CA may be increased.

117 116 117 116 117 116 116 117 2 3 In some embodiments, a light transmittance of the second organic insulating layermay be greater than that of the first organic insulating layer. In some embodiments, a flatness of an upper surface of the second organic insulating layermay be greater than that of an upper surface of the first organic insulating layer. That is, the upper surface of the second organic insulating layermay be flatter than the upper surface of the first organic insulating layer. In some embodiments, the first organic insulating layermay include photosensitive polyimide and the second organic insulating layermay include a siloxane-based resin. In some embodiments, the insulating line INL may include silicon oxynitride (SiOxNy) (x>0, y>0), aluminum oxide (AlO), etc.

11 11 FIGS.A toD 10 FIG. are cross-sectional views sequentially illustrating a method of manufacturing an insulating line and a connecting line according to the embodiment of, and illustrating a part of the component area CA.

11 FIG.A 1 116 1 1 1 Referring to, the first insulating line INLis on the first organic insulating layer. In order to form the first insulating line INL, a photoresist is formed through a first mask process and is etched to form the first insulating line INL. Here, the first insulating line INLmay be obtained through a dry etching.

100 1 Next, the transparent conductive material layer P-TWL and the inorganic insulating layer pINL are deposited on an entire surface of the substrateso as to cover the first insulating line INL.

11 FIG.B 2 2 Next, as illustrated in, a photoresist pattern PR is formed on the inorganic insulating layer pINL through a second mask process. Next, the second insulating line INLis obtained by etching the inorganic insulating layer pINL by using the photoresist pattern PR as a mask. Here, the second insulating line INLmay be obtained through a dry etching.

Next, the transparent conductive material layer P-TWL is etched by using the photoresist pattern PR as a mask to form the connecting line TWL. Here, the connecting line TWL may be obtained through a wet etching.

11 FIG.C 117 1 2 116 Next, referring to, the photoresist pattern PR is removed, and the second organic insulating layeris applied to cover the first insulating line INL, the connecting line TWL, and the second insulating line INLon the first organic insulating layer.

11 FIG.C 1 2 In, thicknesses of the first insulating line INL, the connecting line TWL, and the second insulating line INLare illustrated to be equal to one another, but one or more embodiments are not limited thereto.

12 12 FIGS.A andB are cross-sectional views illustrating a region of a display panel according to one or more embodiments.

12 FIG.A 1 2 1 2 1 2 Referring to, when the first insulating line INLand the second insulating line INLare under and on the connecting line TWL, the thickness t0 of the connecting line TWL may be less than those of the first insulating line INLand the second insulating line INL. For example, the thickness t0 of the connecting line TWL may be about 40 nm to about 60 nm, and the thickness t1 of the first insulating line INLand the thickness t2 of the second insulating line INLmay be about 80 nm to about 120 nm. In the above range, the light transmittance is the largest and the reflectivity is the smallest in the component area CA.

12 FIG.B 1 2 1 2 1 2 Referring to, when the first insulating line INLand the second insulating line INLare under and on the connecting line TWL, the thickness t0 of the connecting line TWL may be greater than those of the first insulating line INLand the second insulating line INL. For example, the thickness t0 of the connecting line TWL may be about 80 nm to about 120 nm, and the thickness t1 of the first insulating line INLand the thickness t2 of the second insulating line INLmay be about 70 nm to about 90 nm. In the above range, the light transmittance is the largest and the reflectivity is the smallest in the component area CA.

13 FIG. 13 FIG. 5 FIG. 10 is a cross-sectional view partially illustrating the display panelaccording to an embodiment. In, like reference numerals as those ofdenote the same members, and detailed descriptions thereof are omitted.

13 FIG. 10 Referring to, the auxiliary organic light-emitting diode OLED′ is in the component area CA of the display panelas an auxiliary display element, and the auxiliary pixel circuits PCa each including the auxiliary thin film transistor TFT′ and the auxiliary storage capacitor Cst′ may be in the peripheral area DPA. In addition, the connecting line TWL configured to connect the auxiliary pixel circuit PCa to the auxiliary organic light-emitting diode OLED′ may be in the component area CA and the peripheral area DPA.

116 117 100 116 117 In the component area CA, a first organic insulating layerand a second organic insulating layerare stacked between the substrateand the auxiliary organic light-emitting diode OLED′, and the connecting line TWL may be between the first organic insulating layerand the second organic insulating layer.

In the embodiment, the insulating line INL patterned to overlap the connecting line TWL may be in the component area CA. The insulating line INL may be in direct contact with the connecting line TWL and may be on and/or under the connecting line TWL.

111 111 111 111 a a In the embodiment, the buffer layermay include an openingcorresponding to the component area CA. When the buffer layerincludes the opening, the light transmittance of the component area CA may be improved.

100 100 Also, in the embodiment, an anti-reflection film AR may be under the substrate. The anti-reflection film AR may be attached to the lower portion of the substratevia an adhesive layer.

100 The anti-reflection film AR may include a light-transmitting base material, a hard coating layer, and a low-refractive index layer. The low refractive index layer may have a refractive index of about 1.2 to about 1.4 within a wavelength range of 550 nm. As the anti-reflection film AR is provided, the light reflection that may occur on the lower interface of the substratemay be reduced, and the light transmittance of the component area CA may be improved.

14 14 FIGS.A andB illustrate data of simulating a light transmittance and a light reflectivity according to a stack structure in the component area CA according to one or more embodiments. Here, the refractive index of the substrate is set to be 1.5, the refractive index of the first organic insulating layer and the second organic insulating layer is set to be 1.5, the refractive index of the connecting line is set to be 1.9, and the refractive index of the insulating line is set to be 1.7.

A comparative example (Ref.) illustrates an example, in which the substrate/first organic insulating layer/connecting line/second organic insulating layer are sequentially stacked and a thickness of the connecting line is 50 nm. In the comparative example (Ref), the light transmittance is 92.19% and the reflectivity is 7.81%.

Case 1 illustrates an example, in which the substrate/first organic insulating layer/insulating line/connecting line/the second organic insulating layer are sequentially stacked, a thickness of the insulating line is 100 nm, and the thickness of the transparent connecting line is 50 nm. In Case 1, the light transmittance was 95.12% and the reflectivity was 4.88%.

Case 2 illustrates an example, in which the substrate/first organic insulating layer/connecting line/insulating line/second organic insulating layer are sequentially stacked, the thickness of the insulating line is 100 nm, and the thickness of the connecting line is 50 nm. In Case 2, the light transmittance was 95.04% and the reflectivity was 4.96%.

Case 3 illustrates an example, in which the substrate/first organic insulating layer/first insulating line/connecting line/second insulating line/second organic insulating layer are sequentially stacked, the thickness of the first and second insulating lines is 80 nm, and the thickness of the connecting line is 50 nm. In Case 3, the light transmittance was 95.99% and the reflectivity was 4.01%.

As illustrated in the data, when the insulating line is provided, the light transmittance increases and the reflectivity decreases. In addition, when the insulating lines are provided on and under the connecting line as illustrated in Case 3, the largest light transmittance and the smallest reflectivity are illustrated.

As described above, the display panel and the display apparatus according to one or more embodiments, the pixel circuits are not in the component area, and thus, a relatively wider transmission region may be ensured to thereby improving transmittance.

Also, the insulating line overlapping the connecting line is on and/or under the connecting line in the component area, and thus, the light diffraction effect caused by the refractive index difference may be reduced.

However, the scope of one or more embodiments is not limited to the above effects.

Although certain embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the inventive concepts are not limited to such embodiments, but rather to the broader scope of the appended claims and various obvious modifications and equivalent arrangements as would be apparent to a person of ordinary skill in the art.