Light-Emitting Device and Method of Manufacturing Light-Emitting Device

This is a national stage of PCT Application No. PCT/JP2023/035195, filed on Sep. 27, 2023, which claims priority to Japanese Patent Application No. 2022-155156, filed on Sep. 28, 2022 and Japanese Patent Application No. 2023-150299 filed on Sep. 15, 2023.

The present disclosure relates to a light-emitting device and a method of manufacturing a light-emitting device.

In recent years, a light source that uses a light-emitting element such as a light-emitting diode has been widely used. For example, Japanese Patent Publication No. 2018-14480 discloses a light-emitting device in which at least a lateral surface of a light-emitting element is covered with a light-reflective covering member, and a phosphor layer is disposed on an upper surface of the light-emitting element.

However, there is still room for improvement in the light-reflective covering member in order to improve the performance of the light-emitting device. As an example, a covering member that covers a light-emitting element generates heat when irradiated with light from the light-emitting element, and therefore further improvement in heat resistance has been needed.

Accordingly, an object of the present disclosure is to provide a light-emitting device including a covering member having a higher heat resistance, and a method of manufacturing the light-emitting device.

A light-emitting device according to the present disclosure includes:

a light-reflective inorganic member covering at least a lateral surface of the semiconductor structure; and a light-reflective resin member covering a lateral surface of the first electrode, and the light-reflective inorganic member. a light-emitting element including a semiconductor structure having a light-emitting surface, an electrode-forming surface located on a side opposite to the light-emitting surface, and a lateral surface located between the light-emitting surface and the electrode-forming surface, and a first electrode disposed on the electrode-forming surface and having a first surface facing the electrode-forming surface, a second surface located on a side opposite to the first surface, and a lateral surface located between the first surface and the second surface; and a light-reflective member covering the light-emitting element except for the light-emitting surface and the second surface, wherein the light-reflective member comprises:

a preparing step of preparing a light-emitting element including a semiconductor structure having a light-emitting surface and an electrode-forming surface located on a side opposite to the light-emitting surface, and a first electrode disposed on the electrode-forming surface and having a first surface facing the electrode-forming surface, a second surface located on a side opposite to the first surface, and a lateral surface located between the first surface and the second surface; a first covering step of covering a lateral surface of the light-emitting element with a light-reflective inorganic member; and a second covering step of covering the electrode-forming surface with a light-reflective resin member to expose the second surface. A method of manufacturing a light-emitting device according to the present disclosure includes:

According to the present disclosure, it is possible to provide a light-emitting device including a covering member having a higher heat resistance, and a method of manufacturing the light-emitting device.

Embodiments of the present disclosure are described below with reference to the drawings. The light-emitting device and the method of manufacturing the light-emitting device described below are intended to embody the technical idea of the present disclosure, and the present disclosure is not limited to the following description unless otherwise specified.

In each drawing, members having identical functions may be denoted by the same reference characters. For ease of explanation or understanding of the points of view, the plurality of exemplary embodiments and examples may be illustrated separately for convenience, but partial substitutions or combinations of the constituent components illustrated in different embodiments and examples are possible. In the embodiments and examples described below, descriptions of matters common to those already described will be omitted, and only different features will be described. In particular, the same or similar effects of the same or similar configurations shall not be mentioned each time for individual embodiments. The sizes, positional relationship, and the like of members illustrated in the drawings may be exaggerated in order to clarify explanation. As a cross-sectional view, an end view illustrating only a cut surface may be used.

Embodiment of Light-emitting Device

1 1 10 20 1 3 FIGS.A toB A light-emitting deviceaccording to an embodiment of the present disclosure will be described in detail with reference to. The light-emitting deviceaccording to an embodiment of the present disclosure includes at least a light-emitting elementand a light-reflective member.

10 11 12 11 11 11 11 11 11 11 12 11 12 11 12 12 12 12 12 a, b a, c a b. b, a b, b a, c a b. The light-emitting elementincludes a semiconductor structureand a first electrode. The semiconductor structurehas a light-emitting surfacean electrode-forming surfaceopposite to the light-emitting surfaceand a lateral surfacebetween the light-emitting surfaceand the electrode-forming surfaceThe first electrodeis disposed on the electrode-forming surfaceand has a first surfacefacing the electrode-forming surfacea second surfacelocated on a side opposite to the first surfaceand a lateral surfacelocated between the first surfaceand the second surface

20 10 11 12 20 21 11 11 22 12 12 21 1 a b. c c 1 1 2 FIGS.A,B, and The light-reflective membercovers the light-emitting elementexcept for the light-emitting surfaceand the second surfaceThe light-reflective memberincludes a light-reflective inorganic membercovering at least the lateral surfaceof the semiconductor structure, and a light-reflective resin membercovering the lateral surfaceof the first electrodeand the light-reflective inorganic member. Hereinafter, components of the light-emitting deviceaccording to the first embodiment of the present disclosure will be described in detail with reference to.

10 10 10 10 11 12 11 12 1 1 2 FIGS.A,B, and As the light-emitting element, for example, a semiconductor light-emitting element such as a light-emitting diode can be used, and the light-emitting elementthat can emit visible light of blue, green, red, or the like can be used. The light-emitting device illustrated inincludes one light-emitting element. The light-emitting elementincludes a semiconductor structureincluding a light-emitting layer, and the first electrode. The semiconductor structurehas a surface on which the first electrodeis formed (electrode-forming surface) and a light extraction surface (light-emitting surface) opposite to the electrode-forming surface.

11 11 11 11 1 11 a X Y 1-X-Y The semiconductor structureincludes a semiconductor layer including a light-emitting layer. Further, a light-transmissive substrate such as sapphire may be provided on the light-emitting surfaceside of the semiconductor structure. As an example, the semiconductor structuremay include three semiconductor layers of a first conductivity type semiconductor layer (for example, an n-type semiconductor layer), a light-emitting layer (active layer), and a second conductivity type semiconductor layer (for example, a p-type semiconductor layer). The semiconductor layer that can emit ultraviolet light or visible light from blue light to green light can be formed of, for example, a semiconductor material such as a group III-V compound semiconductor. Specifically, a nitride-based semiconductor material such as InAlGaN (0≤X, 0≤Y, X+Y≤) can be used. As a semiconductor layered body that can emit red light, GaAs, GaAlAs, GaP, InGaAs, InGaAsP, or the like can be used. The peak wavelengths of the light emitted from the semiconductor structuremay be, for example, in a range from 260 nm to 630 nm.

12 11 12 12 11 11 12 12 12 12 12 12 12 12 12 a b b a, c a b. The first electrodesinclude, for example, a negative electrode and a positive electrode, and is disposed on the same surface side (electrode-forming surface) of the semiconductor structure. The first electrodehas the first surfacefacing the electrode-forming surfaceof the semiconductor structure, the second surfaceopposite to the first surfaceand the lateral surfacebetween the first surfaceand the second surfaceThe pair of first electrodesmay have a single-layer structure or a layered structure. Such a first electrodecan be formed with an discretionary thickness using a material and a configuration known in the art. For example, it is preferable for the thickness of the first electrodeto be in a range from ten and several um to 300 μm. In addition, as the first electrode, a good conductor can be used, and for example, a conductor containing one or more metals selected from the group consisting of Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Al, Cu, Sn, Fe, and Ag is suitable. As the shape of the electrode, various shapes can be selected according to the purpose, application, and the like.

21 10 21 10 21 21 21 21 The light-reflective inorganic memberreflects light emitted from the light-emitting element. The light-reflective inorganic membercan reflect light from the light-emitting elementat a reflectance of 70% or more, for example. The light-reflective inorganic memberis a member formed of an inorganic material. The light-reflective inorganic memberincludes, for example, a filler of an inorganic material and a support material that supports the filler. The filler of an inorganic material is, for example, plate-like particles. Examples of the filler of an inorganic material include at least one selected from boron nitride, silicon nitride, aluminum nitride, and aluminum oxide. The filler may function as an aggregate. Accordingly, even when the temperature of the light-reflective inorganic memberchanges, deformation of the light-reflective inorganic membercan be suppressed. The filler can also reflect light from the light-emitting element.

21 By supporting the filler with the support material, the light-reflective inorganic member can be formed into a desired shape. An example of the support material is a mixture of potassium hydroxide and at least one selected from aluminum oxide, titanium oxide, and silicon oxide. The potassium hydroxide contained in the support material is mixed with an aqueous solution of potassium hydroxide, and voids are formed inside the light-reflective inorganic memberby evaporation of moisture contained in the aqueous solution. Here, when a material different from the filler is used as the support material, the filler and the support material are preferably contained so that the weight of the filler is in a range from 1time to 4 times the weight of the support material. Within this range, shrinkage of the mixture during curing can be reduced. Further, the average particle size of the support material is preferably smaller than the average particle size of the filler. With such a particle size, voids formed between the fillers at the time of mixing can be filled with the support material. The average particle size of the support material can be calculated by measuring the particle size distribution with a laser diffraction method.

The above-mentioned filler and support material may contain an alkali metal. One example of an alkali metal is potassium and/or sodium.

21 21 21 1 11 1 a The light-reflective inorganic membermay further contain a light-scattering material. The light-scattering material is, for example, mainly zirconium oxide, titanium oxide, or silicon oxide. In the case in which the light-emitting element emits ultraviolet light, zirconium oxide, which absorbs less light in the ultraviolet wavelength region, is desirable. When the light-reflective inorganic membercontains a light-scattering material, the light reflectance of the light-reflective inorganic memberis improved. As a result, the luminance difference between the light-emitting surface of the light-emitting deviceand the light-reflective inorganic member (non-light-emitting surface) surrounding the light-emitting surface becomes sharp. That is, the contrast on the light-emitting surfaceside of the light-emitting deviceis improved. As used herein, the term “contrast” refers to the difference in luminance between the light-emitting surface and the non-light-emitting surface. As the light-scattering material, titanium oxide alone may be used, or titanium oxide whose surface is covered with a coating film formed of one or more of silica, aluminum oxide, zirconium oxide, zinc, an organic material, and the like may be used. As the light-scattering material, zirconium oxide alone may be used, or zirconium oxide whose surface is covered with a coating film formed of one or more of silica, aluminum oxide, zinc, an organic material, and the like may be used. Alternatively, stabilized zirconium oxide to which calcium, magnesium, yttrium, aluminum, or the like is added, or partially stabilized zirconium oxide may be used.

21 22 1 FIG.A The outer shape of the light-reflective inorganic memberin a top view may be, for example, a quadrilateral such as a square or a rectangle, or a polygon such as a triangle or a pentagon. In the example illustrated in, the outer shape of the light-reflective resin memberis a square.

21 11 11 12 21 11 11 11 12 21 11 21 11 11 21 12 12 12 21 13 c b b The light-reflective inorganic membercovers the semiconductor structureexcept for the light-emitting surface of the semiconductor structureand the region where the first electrodeis disposed. To be more specific, the light-reflective inorganic membercovers the lateral surfaceof the semiconductor structureand the region of the electrode-forming surfaceother than the region where the first electrodeis disposed. As used herein, the term “cover” includes an aspect in which the light-reflective inorganic memberis in contact with and directly covers the semiconductor structure, and an aspect in which the light-reflective inorganic memberis not in contact with the semiconductor structureand indirectly covers the semiconductor structurevia another member or a space (for example, an air layer). The light-reflective inorganic memberfurther covers the lateral surface of the first electrode. However, the second surfaceof the first electrodeis not covered with the light-reflective inorganic memberbecause a second electrode, which will be described below, is disposed thereon.

1 11 11 21 21 22 30 c In general, an inorganic material has a relatively high melting point and a good heat resistance. Therefore, according to such a light-emitting device, because at least the lateral surfaceof the semiconductor structureis covered with the light-reflective inorganic memberhaving a good heat resistance, the heat resistance characteristics can be improved. In addition, because in general, an inorganic material has a higher thermal conductivity than an organic material and has good heat dissipation characteristics, heat can be appropriately released toward the outside of the light-reflective inorganic member(for example, toward a light-reflective resin memberor the wavelength conversion memberdescribed below).

22 22 10 22 22 22 The light-reflective resin membercontains a light-reflective substance. The light-reflective resin membercan reflect light from the light-emitting elementat a reflectance of 70% or more, for example. As an example of the light-reflective resin member, a thermosetting resin is preferable, and examples thereof include a silicone resin, a silicone-modified resin, an epoxy resin, and/or a phenol resin. When the main component of the light-reflective resin memberis a resin, the light-reflective resin membermay contain a light-reflective substance. For example, titanium oxide, silicon oxide, zirconium oxide, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, or mullite may be contained as the light-reflective substance. The light-reflective substance may be in the grain-like, fiber-like, or flake-like shape, or the like, but is particularly preferably in the fiber-like shape because the effect of reducing the coefficient of thermal expansion of the covering member can be expected.

22 11 11 22 21 11 22 21 30 21 21 10 30 The light-reflective resin memberformed of the above-described material indirectly covers the semiconductor structureexcept for the light-emitting surface of the semiconductor structure. In other words, the light-reflective resin membercovers the light-reflective inorganic membercovering the semiconductor structure. More specifically, the light-reflective resin memberentirely covers the outer surface of the light-reflective inorganic memberexcept for the surface facing the wavelength conversion memberdescribed below. As used herein, the “outer surface of the light-reflective inorganic member” refers to the surface(s) of the light-reflective inorganic memberexcluding the surface(s) facing the light-emitting elementand the surface facing the wavelength conversion member.

21 22 By covering the light-reflective inorganic memberwith the light-reflective resin memberin this manner, even when the light-reflective resin member is processed in the “electrode exposing step” described below in the method of manufacturing a light-emitting device, damage to the light-reflective inorganic member due to the processing can be reduced.

22 22 11 11 12 22 22 b In a preferred aspect of the light-reflective resin member, the thickness of the light-reflective resin memberlocated on the electrode-forming surfaceside of the semiconductor structuremay increase toward the first electrode. The reason for this is that the light-reflective resin memberis pressed and deformed by a grindstone when the light-reflective resin memberis ground, which will be described in detail in “Method of Manufacturing Light-emitting Device” below.

22 22 21 22 10 21 22 10 21 21 22 10 21 22 1 1 2 FIGS.A,B, and 7 FIG.A 7 FIG.B The outer shape of the light-reflective resin memberin a top view can be, for example, a quadrilateral such as a square or a rectangle, or a polygon such as a triangle or a pentagon. In the examples illustrated in, the outer shape of the light-reflective resin memberin a top view is a square. In the example illustrated in, the shapes of the light-reflective inorganic memberand the light-reflective resin memberin a top view are different. In this example, the light-emitting elementand the light-reflective inorganic memberhave a square outer shape in a top view, and the light-reflective resin memberhas a rectangular outer shape in a top view. The shapes of the light-emitting elementand the light-reflective inorganic memberare not limited to the above-described shapes, and the shapes of the light-reflective inorganic memberand the light-reflective resin memberin a top view may be different polygonal shapes or the like. For example, as illustrated in, the light-emitting elementand the light-reflective inorganic membermay have a square outer shape in a top view, and the light-reflective resin membermay have a hexagonal outer shape in a top view.

1 30 11 10 30 a 3 5 12 3 5 12 3 5 12 10 4 6 2 4 14 25 8 4 16 2 2 4 3 4 12 16 3 6 11 2 5 8 3 4 3 3 2 6 2 1-x x 6-x 2 2 3 2 In the light-emitting device, the wavelength conversion membermay be disposed at the light-emitting surfaceof the light-emitting element. Examples of the wavelength conversion substance contained in the wavelength conversion memberinclude an yttrium aluminum garnet-based phosphor (for example, (Y, Gd)(Al, Ga)O:Ce), a lutetium aluminum garnet-based phosphor (for example, Lu(Al, Ga)O:Ce), a terbium aluminum garnet-based phosphor (for example, Tb(Al, Ga)O:Ce), a CCA-based phosphor (for example, Ca(PO)Cl:Eu), an SAE-based phosphor (for example, SrAlO:Eu), a chlorosilicate-based phosphor (for example, CaMgSiOCl:Eu), a silicate-based phosphor (for example, (Ba, Sr, Ca, Mg)SiO:Eu), oxynitride-based phosphors, such as a β-SiAlON-based phosphor (for example, (Si, Al)(O,N):Eu) and an α-SiAlON-based phosphor (for example, Ca (Si, Al)(O,N):Eu), nitride-based phosphors, such as an LSN-based phosphor (for example, (La, Y)SiN:Ce), a BSESN-based phosphor (for example, (Ba, Sr)SiN:Eu), an SLA-based phosphor (for example, SrLiAlN:Eu), a CASN-based phosphor (for example, CaAlSiN: Eu), and an SCASN-based phosphor (for example, (Sr, Ca) AlSiN:Eu), fluoride-based phosphors, such as a KSF-based phosphor (for example, KSiF:Mn), a KSAF-based phosphor (for example, K(SiAl)F:Mn, where x satisfies 0<x<1), and an MGF-based phosphor (for example, 3.5 MgO·0.5 MgF·GeO:Mn), a quantum dot having a perovskite structure (for example, (Cs, FA, MA)(Pb, Sn)(F, Cl, Br, I), where FA and MA represent formamidinium and methylammonium, respectively), a II-VI group quantum dot (for example, CdSe), a III-V group quantum dot (for example, InP), a quantum dot having a chalcopyrite structure (for example, (Ag, Cu)(In, Ga)(S, Se)), or the like. The phosphors described above are particles. Further, one type of these wavelength conversion substances can be used alone, or two or more types of these wavelength conversion substances can be used in combination.

30 30 Examples of the wavelength conversion memberinclude a resin material, ceramics, glass, or the like containing the wavelength conversion substance, a sintered body, and the like. In addition, the wavelength conversion membermay be obtained by disposing a resin material containing a wavelength conversion member on a surface of a molded body of a resin material, ceramics, glass, or the like. The resin material is preferably a light-transmissive resin, and a thermosetting resin such as a silicone resin, a silicone modified resin, an epoxy resin, or a phenol resin, or a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a methylpentene resin, or a polynorbornene resin can be used. In particular, a silicone resin having excellent light resistance and heat resistance is suitable.

30 10 30 10 When the irradiation light irradiated through the wavelength conversion memberis white light, for example, the light-emitting elementthat emits blue light and the wavelength conversion memberthat emits yellow light by the light from the light-emitting elementcan be combined.

30 The wavelength conversion membermay include a light diffusion member that diffuses the excitation light and the wavelength-converted light. The light diffusion member may contain, for example, titanium oxide, barium titanate, aluminum oxide, silicon oxide, or the like.

30 22 1 The lateral surface of the wavelength conversion member, which will be described in detail in “Method of Manufacturing Light-emitting Device” below, may be flush with the lateral surface of the light-reflective resin memberby singulation to form the outer lateral surface of the light-emitting device.

30 11 10 10 a A light-transmissive member that does not contain a wavelength conversion substance can be used as the wavelength conversion member. Disposing the light-transmissive member, the light-emitting surfaceof the light-emitting elementcan increase light extraction. The light-transmissive member is a member that transmits light emitted from the light-emitting elementwithout wavelength conversion. The light-transmissive member may be, for example, a molded body of a resin material, ceramics, glass, or the like.

The resin material of the light-transmissive member is preferably a light-transmissive resin. Examples of the resin material of the light-transmissive resin include a thermosetting resin such as a silicone resin, a silicone modified resin, an epoxy resin, or a phenol resin, or a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a methylpentene resin, or a polynorbornene resin. In particular, a silicone resin having excellent light resistance and heat resistance is suitable.

10 The light-transmissive member may include a light diffusion member that diffuses light from the light-emitting element. The light diffusion member may include, for example, a light diffusion member that can contain titanium oxide, barium titanate, aluminum oxide, silicon oxide, or the like. By including the light diffusion member, the light diffusibility can be improved.

6 FIG. 11 10 21 11 10 1 1 10 10 1 11 10 a a a As illustrated in, a light-transmissive member or a wavelength conversion member does not have to be disposed on the light-emitting surfaceof the light-emitting element. In this case, the upper surface of the light-reflective inorganic memberand the light-emitting surfaceof the light-emitting elementconstitute the upper surface of the light-emitting device. In such a light-emitting device, when light-emitting elementthat can emit ultraviolet light is used as the light-emitting element, the light-emitting devicecan be reduced in size by not disposing a light-transmissive member or a wavelength conversion member on the light-emitting surfaceside of the light-emitting element.

1 13 12 12 13 12 22 b b The light-emitting devicemay include the second electrodebonded to the second surfaceof the first electrode. The second electrodemay be provided so as to extend from the second surfaceto the outer surface of the light-reflective resin member.

13 1 13 12 1 13 The second electrodemainly functions as an external electrode of the light-emitting device. As the material of the second electrode, a material having better corrosion resistance and oxidation resistance than those of the first electrodeis preferably selected. For example, the outermost surface layer is preferably formed of Au or a platinum group element such as Pt. Considering that the light-emitting deviceis mounted using solder, it is preferable to use Au, which has good solderability, for the outermost surface of the second electrode.

13 13 12 10 12 12 The second electrodemay be formed of only a single layer of a single material, or may be formed by stacking layers of different materials. In particular, the second electrodehaving a high melting point is preferably used, and examples thereof include Ru, Mo, Ta, and the like. In addition, by providing such a metal having a high melting point between the first electrodeof the light-emitting elementand the outermost surface layer, a diffusion suppression layer that can reduce diffusion of Sn contained in the solder to the first electrodeor to a layer close to the first electrodecan be formed. Examples of the layered structure having such a diffusion suppression layer include Ni/Ru/Au, Ti/Pt/Au, and the like. The thickness of the diffusion suppression layer (for example, Ru) is preferably about in a range from 10 Å to 1000 Å.

1 21 22 21 1 21 22 21 30 22 13 FIG. As described above, the light-emitting deviceaccording to the first embodiment of the present disclosure includes the light-reflective inorganic memberto improve heat resistance, and includes the light-reflective resin memberto reduce deformation of the light-reflective inorganic memberdue to processing during manufacture of the light-emitting device. As an example, in the electrode exposing step described below, the light-reflective inorganic memberis covered with the light-reflective resin memberas illustrated in, so the influence of processing on the light-reflective inorganic membercan be reduced. The wavelength conversion memberof the present embodiment may be a light-transmissive member that does not contain a wavelength conversion substance. As will be described in detail in the fifth embodiment below, the light-reflective resin memberof the present embodiment may be a resin member that transmits light.

1 1 1 21 22 30 3 3 4 FIGS.A,B, and Next, components of the light-emitting deviceaccording to a second embodiment of the present disclosure will be described in detail with reference to. The light-emitting deviceof the second embodiment differs from the light-emitting deviceof the first embodiment in the configuration of the light-reflective inorganic memberand the light-reflective resin member, and the configuration of the wavelength conversion member. The other configurations are basically the same as those of the light-emitting device according to the first embodiment of the present disclosure described above. This different configuration will be described below.

21 10 21 22 10 21 22 11 a. Aspects of Light-reflective Inorganic Member and Light-reflective Resin Member In the light-emitting device of the second embodiment, the surface of the light-reflective inorganic memberopposite to the surface facing the lateral surface of the light-emitting elementis inclined or curved. Specifically, the interface between the light-reflective inorganic memberand the light-reflective resin memberis inclined or curved. The distance from the lateral surface of the light-emitting elementto the interface between the light-reflective inorganic memberand the light-reflective resin memberincreases toward the light-emitting surface

21 11 21 a, According to such a configuration, the light-reflective inorganic memberhaving a good heat resistance is disposed so as to become thicker as it gets closer to the light-emitting surfacewhich is easily heated, whereby the heat resistance can be further improved. In addition, because the inorganic material has good heat dissipation characteristics, heat can be appropriately dissipated to the outside of the light-reflective inorganic member.

Aspect of Wavelength Conversion Member

1 30 21 21 22 30 21 30 21 22 30 22 30 In the light-emitting deviceaccording to the second embodiment, the lateral surface of the wavelength conversion memberis covered with the light-reflective inorganic member. According to such a configuration, the light-reflective inorganic memberand the light-reflective resin membercan be disposed also on the lateral surface of the wavelength conversion member, the volume of the light-reflective inorganic membercan be increased as compared with the light-emitting device of the first embodiment, and the heat resistance can be further improved. In addition, heat generated during wavelength conversion in the wavelength conversion membercan be appropriately transferred to the light-reflective inorganic member. In addition, because the light-reflective resin memberis separated from the wavelength conversion member, cracking of the light-reflective resin memberdue to heat generated in the wavelength conversion membercan be suppressed.

1 1 1 21 22 5 FIG. Next, components of the light-emitting deviceaccording to a third embodiment of the present disclosure will be described in detail with reference to. The light-emitting deviceof the third embodiment is different from the light-emitting deviceof the second embodiment in the manner of covering with the light-reflective inorganic memberand the light-reflective resin member. The other configurations are basically the same as those of the light-emitting devices according to the first embodiment and the second embodiment of the present disclosure described above. This different configuration will be described below.

1 1 21 22 11 22 21 11 22 21 b b Aspects of Light-reflective Inorganic Member and Light-reflective Resin Member In the light-emitting deviceof the third embodiment, the outer lateral surface of the light-emitting deviceis constituted by the light-reflective inorganic memberand the light-reflective resin member. The electrode-forming surfaceis covered with the light-reflective resin member. According to such a configuration, the volume of the light-reflective inorganic memberon the electrode-forming surfacecan be reduced, and therefore, even when the light-reflective resin memberis processed in the “electrode exposing step” described below in the method of manufacturing a light-emitting device, deformation of the light-reflective inorganic memberdue to the processing can be reduced.

1 10 Next, the light-emitting deviceaccording to a fourth embodiment of the present disclosure will be described. The light-emitting device according to the fourth embodiment is different from the invention according to the first embodiment in that a plurality of light-emitting elementsare provided. Other configurations are basically the same as those of the light-emitting devices according to the first to third embodiments of the present disclosure described above, but configurations different from those of the above embodiments will be described in detail below.

10 10 10 10 10 10 10 10 As the plurality of light-emitting elements, for example, three light-emitting elementsof a light-emitting elementthat emits red light, a light-emitting elementthat emits blue light, and a light-emitting elementthat emits green light may be used, or any two of the light-emitting elementsmay be used. Alternatively, light-emitting elementsthat emit light of different wavelengths may be used, or light-emitting elementsthat emit light of the same wavelength may be used.

10 21 11 11 11 12 10 21 21 30 22 21 10 1 1 a 8 FIG. 1 6 FIGS.to In each of the plurality of light-emitting elements, the light-reflective inorganic membermay cover the semiconductor structureexcept for the light-emitting surfaceof each semiconductor structureand the region where the first electrodeis disposed. For example, as illustrated in, the two light-emitting elementsmay be collectively covered with the light-reflective inorganic member. The entire outer surface of the light-reflective inorganic memberexcept for the surface facing the wavelength conversion membermay be covered with the light-reflective resin member. According to such a covering mode of the light-reflective inorganic member, the interval between the light-emitting elementscan be reduced as compared with the case in which the plurality of light-emitting devicesillustrated inare arranged. This makes it possible to reduce the size of the light-emitting device.

10 11 10 21 10 21 22 21 30 21 21 10 9 FIG. As a modified example of the manner of covering the light-emitting elements, as illustrated in, the semiconductor structuresof two light-emitting elementsmay be individually covered with the light-reflective inorganic members. The light-emitting elementsindividually covered with the light-reflective inorganic membersmay be collectively covered with the light-reflective resin memberexcept for the surface of each light-reflective inorganic memberfacing the wavelength conversion member. According to such a covering mode of the light-reflective inorganic member, deformation of the light-reflective inorganic membercovering the light-emitting elementcan be reduced.

1 Next, the light-emitting deviceaccording to a fifth embodiment of the present disclosure will be described. The light-emitting device according to the fifth embodiment is different from the invention according to the first embodiment in that a light-transmissive resin member or a light-absorptive resin member is used instead of the light-reflective resin member of the light-emitting device according to the first embodiment. The other configurations are basically the same as those of the light-emitting devices according to the first to fourth embodiments of the present disclosure described above.

10 1 The light-transmissive resin member is a member that transmits light. For example, the light-transmissive resin member can transmit the light from the light-emitting elementat a transmittance of 60% or more. As an example, a transparent resin can be used. As described above, when the light-transmissive resin member is used instead of the light-reflective resin member of the first embodiment, it is possible to reduce the occurrence of a rapid change in luminance at the boundary between the light-emitting surface of the light-emitting deviceand the non-light-emitting surface surrounding the light-emitting surface.

1 1 As the light-absorbing resin member, a resin that absorbs light (for example, a black resin) can be used. As described above, when the light-absorbing resin member is used instead of the light-reflective resin member of the first embodiment, the luminance difference between the light-emitting surface of the light-emitting deviceand the non-light-emitting surface surrounding the light-emitting surface is increased, so the light-emitting devicewith good contrast can be obtained.

10 14 FIGS.to Next, a method of manufacturing a light-emitting device according to the present disclosure will be described in detail with reference to. A method of manufacturing a light-emitting device according to the present disclosure includes a “preparing step of preparing a light-emitting element”, a “first covering step”, and a “second covering step”. The method may further include a “step of disposing a wavelength conversion member”, an “electrode exposing step”, and/or a “step of forming a second electrode”. The method will be described below, following each step.

10 11 11 11 11 12 11 12 11 12 12 12 12 12 10 10 a b a; b, a b, b a, c a b. First, the light-emitting elementis prepared, including: the semiconductor structurehaving the light-emitting surfaceand the electrode-forming surfaceopposite to the light-emitting surfaceand the first electrodedisposed on the electrode-forming surfaceand having the first surfacefacing the electrode-forming surfacethe second surfacelocated on the side opposite to the first surfaceand the lateral surfacelocated between the first surfaceand the second surfaceThe light-emitting elementcan be prepared through some or all of the manufacturing steps, such as a step of growing a semiconductor. Alternatively, the light-emitting elementcan be prepared by purchase or the like.

10 FIG. 10 FIG. 10 FIG. 10 14 FIGS.to 10 30 30 10 30 10 30 10 10 30 1 10 30 10 10 Subsequently, as illustrated in, the prepared light-emitting elementis disposed on the wavelength conversion member. After an adhesive is applied onto the wavelength conversion member, the light-emitting elementis disposed on the adhesive, whereby the wavelength conversion memberand the light-emitting elementare bonded to each other. In the example illustrated in, the adhesive is disposed between the wavelength conversion memberand the light-emitting element. The adhesive is not illustrated in. As a material of the adhesive, a light-transmitting thermosetting resin material such as an epoxy resin or a silicone resin can be used. The adhesive is applied by, for example, potting or pin transfer.shows an example illustrating a single light-emitting elementdisposed on the wavelength conversion member, but the present invention is not limited to this example, and a plurality of light-emitting devicesmay be manufactured by disposing a plurality of light-emitting elementson the wavelength conversion memberand singulating the plurality of light-emitting elementsinto individual light-emitting elementsin the singulation step described below.

10 21 21 21 21 21 21 The first covering step is a step in which at least the lateral surface of the light-emitting elementis covered with the light-reflective inorganic member. First, a light-reflective inorganic material′ constituting the light-reflective inorganic memberis prepared. The light-reflective inorganic material′ is prepared by mixing the materials of the filler and the support material. The mixing of the materials of the filler and the support material is performed, for example, by mixing to the extent that a uniform viscosity is obtained, and then defoaming and stirring with a stirring defoaming machine that can stir under reduced pressure. The filler and the support material may be mixed with an alkali solution containing an alkali metal and formed through a step such as heating. In this case, the light-reflective inorganic membercontains an alkali metal derived from the alkaline solution. Examples of the alkali metal contained in the alkaline solution include potassium and/or sodium. When the filler and the support material are mixed by the alkaline solution, the filler can be appropriately dispersed in the light-reflective inorganic member.

21 21 10 30 21 21 30 21 21 21 21 21 21 10 21 21 30 30 10 30 21 30 11 11 11 10 12 12 21 21 10 11 FIG. 11 FIG. c b c After the light-reflective inorganic material′ is prepared, as illustrated in, the light-reflective inorganic material′ is applied to at least the lateral surface of the light-emitting element. By vibrating the wavelength conversion memberduring and/or after the application of the light-reflective inorganic material′, the light-reflective inorganic material′ can be spread over a wide area. As a method of vibrating here, for example, a vibration forming machine or the like is used, and vibration is performed with an excitation force in a range from 500 N to 3000 N. Instead of vibrating the wavelength conversion member, the light-reflective inorganic material′ may be applied while vibrating a nozzle for supplying the light-reflective inorganic material′. Thereafter, the light-reflective inorganic material′ is cured by heating to form the light-reflective inorganic memberhaving light reflectivity. The temperature at which the light-reflective inorganic material is heated is, for example, in a range from 150° C. to 250° C. The shape of the light-reflective inorganic material′ having the lateral surface as illustrated incan be achieved by, for example, applying the light-reflective inorganic material′ in a state where a guide is disposed around the light-emitting element, curing the light-reflective inorganic material′, and then removing the guide. The light-reflective inorganic membercovering the lateral surface of the wavelength conversion memberdescribed in the second embodiment can be formed, for example, by disposing the wavelength conversion memberon a support plate (not illustrated), disposing the light-emitting elementon the wavelength conversion member, and applying the light-reflective inorganic material′ on the support plate so as to cover the lateral surface of the wavelength conversion member, the lateral surfaceand the electrode-forming surfaceof the semiconductor structureof the light-emitting element, and the lateral surfaceof the first electrode. At this time, by applying the light-reflective inorganic material′ with an appropriate viscosity and in an appropriate amount, the surface of the light-reflective inorganic memberopposite to the surface facing the lateral surface of the light-emitting elementcan be formed as an inclined surface or a curved surface.

11 10 21 10 10 21 11 11 11 10 12 12 a c b c 6 FIG. In the case in which no light-transmissive member or no wavelength conversion member is disposed on the light-emitting surfaceof the light-emitting elementsas illustrated in, the light-reflective inorganic membercovering the lateral surface of the light-emitting elementcan be formed by disposing the light-emitting elementon a support plate (not shown) and applying the light-reflective inorganic material′ on the support plate so as to cover the lateral surfaceand the electrode-forming surfaceof the semiconductor structureof the light-emitting elementand the lateral surfaceof the first electrode.

21 12 11 11 21 21 11 21 5 FIG. b b Here, the light-reflective inorganic material′ may be applied so as not to completely cover the first electrode. As illustrated in, the electrode-forming surfaceof the semiconductor structuremay be exposed. Such application of the light-reflective inorganic material′ can reduce the volume of the light-reflective inorganic memberat the electrode-forming surfaceas described above in the “light-emitting device according to the third embodiment”, and can effectively reduce deformation of the light-reflective inorganic memberdue to processing (such as grinding).

11 22 12 12 22 22 21 22 11 21 12 22 11 21 12 22 12 21 22 b b 12 FIG. 12 FIG. The second covering step is a step of covering the electrode-forming surfacewith the light-reflective resin membersuch that the second surfaceof the first electrodeis exposed. First, a light-reflective resin material′ constituting the light-reflective resin memberis prepared. As an example, a liquid silicone resin is prepared and applied so as to cover the light-reflective inorganic memberas illustrated in. In the example illustrated in, the light-reflective resin material′ completely covers the semiconductor structure, the light-reflective inorganic member, and the first electrode. The light-reflective resin material′ does not have to completely cover the semiconductor structure, the light-reflective inorganic member, and the first electrode. For example, the light-reflective resin material′ does not have to cover a part of the first electrode. The light-reflective inorganic membercan be impregnated with a part of the light-reflective resin material′.

12 12 22 22 12 12 10 b b 13 FIG. The second covering step may include an electrode exposing step of exposing the second surfaceof the first electrodefrom the light-reflective resin member. As illustrated in, the light-reflective resin material′ is ground to expose the second surfaceof the first electrodeof the light-emitting element.

21 21 22 21 13 FIG. The light-reflective inorganic memberis harder than an organic material, but is brittle when processed. In the electrode exposing step, as illustrated in, the light-reflective inorganic memberis covered with the light-reflective resin member, which is an organic material, so deformation of the light-reflective inorganic memberdue to processing can be reduced.

22 22 12 22 22 12 12 Here, when the light-reflective resin memberis ground, the light-reflective resin memberis pressed and deformed by the grindstone, whereas the first electrodehaving higher rigidity than that of the light-reflective resin memberis less likely to be pressed and deformed by the grindstone. Therefore, the thickness of the light-reflective resin memberafter the electrode exposing step may increase toward the first electrode. Therefore, the heat resistance of a portion in the vicinity of the first electrodeto which heat is relatively subjected is secured.

13 12 12 12 22 13 12 13 1 13 1 21 22 21 b b 14 FIG. 14 FIG. 14 FIG. The second electrode forming step is a step of forming the second electrodethat is bonded to the second surfaceof the first electrodeand extends from the second surfaceto the outer surface of the light-reflective resin member. As illustrated in, the second electrodeis formed in order to suppress corrosion and oxidation of the exposed first electrode. The second electrodecan be formed by, for example, sputtering, vapor deposition, an atomic layer deposition (ALD) method, a metal organic chemical vapor deposition (MOCVD) method, a plasma-enhanced chemical vapor deposition (PECVD) method, an atmospheric pressure plasma deposition method, or the like. In the case of manufacturing the plurality of light-emitting devices, after the second electrodeis formed, the light-emitting deviceis manufactured by cutting at a predetermined cutting position (for example, a broken line D in) to singulate. In the step of singulation, as illustrated in, because the light-reflective inorganic memberis covered with the light-reflective resin memberthat is an organic material, deformation of the light-reflective inorganic membercan be reduced.

21 22 20 1 21 22 5 FIG. In addition, by cutting at a position including the light-reflective inorganic memberand the light-reflective resin memberin the thickness direction of the light-reflective member, it is possible to achieve a structure in which the outer lateral surface of the light-emitting deviceis constituted by the light-reflective inorganic memberand the light-reflective resin memberas illustrated in.

1 21 22 21 1 As described above, the method of manufacturing the light-emitting deviceaccording to the present disclosure can manufacture a light-emitting device that includes the light-reflective inorganic memberto improve heat resistance, and includes the light-reflective resin memberto reduce deformation of the light-reflective inorganic memberdue to processing during manufacture of the light-emitting device.

11 22 12 12 b b In the method of manufacturing the light-emitting device described above, the step of covering the electrode-forming surfacewith the light-reflective resin membersuch that the second surfaceof the first electrodeis exposed has been described as the second covering step. Instead of the light-reflective resin member, the resin member (for example, a light-transmissive resin member or a resin member that absorbs light) described in the fifth embodiment may be used.

The embodiments disclosed this time are illustrative in all respects and are not intended to be the basis of limiting interpretation. Accordingly, the technical scope of the present disclosure is not construed solely by the embodiment described above but is defined based on the description of the scope of claims. In addition, the technical scope of the present disclosure includes all variations within the meaning and scope equivalent to the scope of claims.