Light-Emitting Device, Display Apparatus and Backlight Apparatus

Embodiments of the present disclosure relate to a light-emitting device, a display apparatus and a backlight apparatus.

LEDs (light emitting diodes) have the advantages of low cost, high light efficiency, energy saving and environmental protection, and are widely used in lighting, visible light communications, and luminous displays.

One of the development directions of the LEDs is towards miniaturization and miniaturization. LEDs are shrunk to form arrays with millimeter or even pitches in microns, which can achieve ultra-high resolution, and can be more widely used in information display and other fields.

At present, small-sized flip-chip LED chips have been widely used in backlight displays and RGB display apparatuses, and currently, display products on the market are installed upside down on a circuit substrate by using thousands or tens of thousands of flip-chip LED chips with a single light-emitting unit or flip-chip LED chips with two light-emitting units connected in series.

In a case that sizes of chips become smaller, distances between core particles become closer, and contrast of final display is higher, but the current used in chips becomes smaller, how to improve product performance becomes a development direction. Using high-voltage LEDs to replace existing normal-voltage LEDs can reduce current values of lines and increase a proportion of VLEDs while maintaining a same brightness, thereby reducing overall power consumption, and improving the competitiveness of Mini LED glass-based products. Compared with the manufacturing process of the normal-voltage LEDs, in the manufacturing process of the high-voltage LEDs, a single PN junction is divided into two PN junctions, and then the two PN junctions are connected through a bridge metal, thus the driving voltage is increased and the current used is reduced while the brightness of a single LED remains unchanged.

At least one embodiment of the disclosure provides a light-emitting device. The light-emitting device includes a sub-light-emitting unit. The sub-light-emitting unit includes: a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a current spreading layer and an insulating layer. The second semiconductor layer is stacked with the first semiconductor layer and has a material different from a material of the first semiconductor layer. The light-emitting layer is located between the first semiconductor layer and the second semiconductor layer. The current spreading layer is located on a side of the first semiconductor layer away from the second semiconductor layer. The insulating layer is located between the current spreading layer and the first semiconductor layer. The current spreading layer and the second semiconductor layer are electrically connected with the first semiconductor layer through a via hole penetrating the insulating layer.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, a direction along which the first semiconductor layer and the second semiconductor layer are stacked is a longitudinal direction, a plane perpendicular to the longitudinal direction is a horizontal plane, an area of an orthographic projection of the current spreading layer on the horizontal plane is smaller than an area of an orthographic projection of the first semiconductor layer on the horizontal plane, and is located within an orthographic projection of the first semiconductor layer on the horizontal plane.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the area of the orthographic projection of the current spreading layer on the horizontal plane is less than ½ of the area of the orthographic projection of the first semiconductor layer on the horizontal plane; and in at least one direction in the horizontal plane, a size of the current spreading layer does not exceed 2 times of a size of the via hole.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, a direction along which the first semiconductor layer and the second semiconductor layer are stacked is a longitudinal direction, and a plane perpendicular to the longitudinal direction is a horizontal plane; and an orthographic projection of the current spreading layer on the horizontal plane substantially coincides with an orthographic projection of the first semiconductor layer on the horizontal plane.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the light-emitting device includes a plurality of the sub-light-emitting units, the plurality of sub-light-emitting units include a first sub-light-emitting unit and a second sub-light-emitting unit; the light-emitting device further includes a bridge electrode, the bridge electrode electrically connects a first semiconductor layer of the first sub-light-emitting unit with a second semiconductor layer of the second sub-light-emitting unit; and a first end of the bridge electrode is electrically connected with the first semiconductor layer of the first sub-light-emitting unit.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the first end of the bridge electrode includes an annular part, and the annular part at least partially surrounds a via hole of the first sub-light-emitting unit.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the first end of the bridge electrode is in direct contact with at least one of the current spreading layer of the first sub-light-emitting unit and the first semiconductor layer of the first sub-light-emitting unit.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, in a case where a direction along which the first semiconductor layer and the second semiconductor layer are stacked is a longitudinal direction, and a plane perpendicular to the longitudinal direction is a horizontal plane, an area of an orthographic projection of the current spreading layer on the horizontal plane is smaller than an area of an orthographic projection of the first semiconductor layer on the horizontal plane, and is located within the orthographic projection of the first semiconductor layer on the horizontal plane, the annular part at least partially surrounds the current spreading layer of the first sub-light-emitting unit, and the annular part is in direct contact with the first semiconductor layer of the first sub-light-emitting unit, or the annular part is in direct contact with the insulating layer.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, a surface of the annular part facing the first semiconductor layer of the first sub-light-emitting unit is in direct contact with a surface of the first semiconductor layer of the first sub-light-emitting unit facing the annular part.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, in the case where the direction along which the first semiconductor layer and the second semiconductor layer are stacked is the longitudinal direction, the plane perpendicular to the longitudinal direction is the horizontal plane, and the orthographic projection of the current spreading layer on the horizontal plane substantially coincides with the orthographic projection of the first semiconductor layer on the horizontal plane, and the annular part at least partially surrounds the via hole of the first sub-light-emitting unit, and is in contact with the current spreading layer.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the surface of the annular part facing the current spreading layer of the first sub-light-emitting unit is in direct contact with the surface of the current spreading layer of the first sub-light-emitting unit facing the annular part.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the annular part is a closed annular shape or an unclosed annular shape.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, a line width in a radial direction of the annular part is greater than a distance from an inner ring of the annular part close to the via hole to a center of the via hole, and the radial direction includes a direction from an annular center of the annular part to a circumference of the annular part.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the light-emitting device includes a plurality of the bridge electrodes, the first end of each of the plurality of the bridge electrodes is electrically connected with the first semiconductor layer of the first sub-light-emitting unit, and the first end of at least one of the bridge electrodes includes the annular part.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the plurality of bridge electrodes include a first bridge electrode and a second bridge electrode, the first sub-light-emitting unit includes a plurality of via holes, and the plurality of via holes include a first sub-via hole and a second sub-via hole; and both of a first end of the first bridge electrode and a first end of the second bridge electrode include the annular part, the annular part of the first end of the first bridge electrode at least partially surrounds the first sub-via hole, and the annular part of the first end of the second bridge electrode at least partially surrounds the second sub-via hole.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, in a case where the annular part at least partially surrounds the current spreading layer of the first sub-light-emitting unit, the first sub-light-emitting unit includes a plurality of spreading layers, the plurality of spreading layers include a first spreading layer and a second spreading layer that are electrically connected with the first semiconductor layer of the first sub-light-emitting unit through the first sub-via hole and the second sub-via hole, respectively, the annular part of the first end of the first bridge electrode at least partially surrounds the first spreading layer, and the annular part of the first end of the second bridge electrode at least partially surrounds the second spreading layer.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the first sub-light-emitting unit and the second sub-light-emitting unit are arranged along a first direction, the bridge electrode as a whole extends along the first direction; a direction along which the first semiconductor layer and the second semiconductor layer are stacked is a longitudinal direction, and a plane perpendicular to the longitudinal direction is a horizontal plane, for the bridge electrode, the bridge electrode includes a first extension part, an orthographic projection of the first extension part on the horizontal plane is overlapped with an orthographic projection of the first sub-light-emitting unit on the horizontal plane, the first extension part includes a first part and a second part connected with each other; the first semiconductor layer of the first sub-light-emitting unit has a first edge close to the second sub-light-emitting unit, an orthographic projection of the first edge on the horizontal plane is a boundary of an orthographic projection of the first part on the horizontal plane and an orthographic projection of the second part on the horizontal plane, the orthographic projection of the first part on the horizontal plane is overlapped with the orthographic projection of the first semiconductor layer of the first sub-light-emitting unit on the horizontal plane, the orthographic projection of the second part on the horizontal plane is not overlapped with the orthographic projection of the first semiconductor layer of the first sub-light-emitting unit on the horizontal plane; and an extension direction of the first part is substantially perpendicular to the first edge.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, for the bridge electrode, the bridge electrode includes a second extension part, the second extension part includes a third part and a fourth part connected to each other, the second semiconductor layer of the second sub-light-emitting unit has a second edge close to the first sub-light-emitting unit, an orthographic projection of the second edge on the horizontal plane is a boundary of an orthographic projection of the third part on the horizontal plane and an orthographic projection of the fourth part on the horizontal plane, the orthographic projection of the third part on the horizontal plane is overlapped with the orthographic projection of the second semiconductor layer of the second sub-light-emitting unit on the horizontal plane, the orthographic projection of the fourth part on the horizontal plane is not overlapped with the orthographic projection of the second semiconductor layer of the second sub-light-emitting unit on the horizontal plane; and an extension direction of the third part is substantially perpendicular to the second edge.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the first extension part of the bridge electrode includes a first interface part covering the first edge, a second extension part of the bridge electrode includes a second interface part covering the second edge; along the first direction, a thickness of the first interface part in the longitudinal direction is uniform, and a thickness of the second interface part in the longitudinal direction is uniform.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the first sub-light-emitting unit and the second sub-light-emitting unit are arranged in the first direction, a length of the first end of the bridge electrode in a second direction is greater than ½ of a length of the first semiconductor layer of the first sub-light-emitting unit in the second direction, and the second direction is perpendicular to the first direction.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the bridge electrode includes a connection part and a plurality of branches, a first end of each of the plurality of branches is electrically connected with the first semiconductor layer of the first sub-light-emitting unit, and the first end of each of the plurality of branches are electrically connected with the connection part, the connection part is in direct contact with at least one of the current spreading layer of the first sub-light-emitting unit and the first semiconductor layer of the first sub-light-emitting unit; and a length of the connection part in the second direction is greater than ½ of a length of the first semiconductor layer of the first sub-light-emitting unit in the second direction.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the length of the connection part in the second direction is substantially equal to the length of the first semiconductor layer of the first sub-light-emitting unit in the second direction.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the connection part is located in an edge region of the first sub-light-emitting unit close to the second sub-light-emitting unit and is in a strip shape extending along the second direction.

For example, in the light-emitting device provided by at least one embodiment of the present disclosure, the light-emitting device is a Mini Light Emitting Diode (referred to as a Mini LED) or a Micro Light Emitting Diode (referred to as a Micro LED); a material of the current spreading layer is a transparent conductive material; the material of the first semiconductor is a P-type semiconductor material, and the material of the second semiconductor is an N-type semiconductor material, or the material of the first semiconductor is an N-type semiconductor material, and the material of the second semiconductor is a P-type semiconductor material.

At least one embodiment of the present disclosure provides a backlight apparatus, includes any one of the light-emitting devices provided by embodiments of the present disclosure.

At least one embodiment of the present disclosure provides an electronic device apparatus, includes any one of the backlight apparatus provided by embodiments of the present disclosure.

In order to make objectives, technical details, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments will be described in a clearly and fully understandable way in connection with the drawings related to the embodiments of the present disclosure. The described embodiments are just a part but not all of the embodiments of the present disclosure. Based on the described embodiments herein, those skilled in the art can obtain other embodiment(s), without any inventive efforts, which should be within the scope of the present disclosure.

Unless otherwise defined, all the technical and scientific terms used herein have the same meanings as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. The terms “first”, “second”, etc., which are used in the present disclosure, are not intended to indicate any sequence, amount or importance, but distinguish various components. Also, the terms “comprise,” or “include,” etc., are intended to specify that the elements or the objects stated before these terms encompass the elements or the objects and equivalents thereof listed after these terms, but do not preclude the other elements or objects. The phrases “connect”, “connected”, etc., are not intended to define a physical connection or mechanical connection, but may include an electrical connection, directly or indirectly. “On,” “under,” “left,” “right” and the like are only used to indicate relative position relationship, and when the absolute position of the object which is described is changed, the relative position relationship may be changed accordingly.

Characteristics such as “parallel”, “perpendicular” and “identical” used in this disclosure include “parallel”, “perpendicular”, “identical” and other characteristics in the strict sense, as well as “substantially parallel”, “substantially overlapping”, “substantially identical” and so on and other situations that contain certain errors, taking into account the errors in the measurement and associated with the measurement of the particular quantity (for example, limitations of the measurement system), which means they are within an acceptable range of deviations for a particular value as determined by one of ordinary skilled in the art. For example, “substantially” can mean they are within one or more standard deviations, and unless otherwise specified, can mean they are within a 10% or 5% deviation range of the stated value.

In display apparatuses or backlight modules using current-driven light-emitting diodes (LEDs), as the pitches between adjacent LEDs become smaller and smaller, and the current used becomes smaller and smaller, the LEDs will operate in an unstable state and have low luminous efficiency.

At least one embodiment of the present disclosure provides a light-emitting device, which includes a sub-light-emitting unit, and the sub-light-emitting unit includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a current spreading layer and an insulating layer. The second semiconductor layer is stacked with the first semiconductor layer and is made of a material different from a material of the first semiconductor layer; the light-emitting layer is located between the first semiconductor layer and the second semiconductor layer; the current spreading layer is located on a side of the first semiconductor layer away from the second semiconductor layer; the insulating layer is located between the current spreading layer and the first semiconductor layer, and the current spreading layer and the second semiconductor layer are electrically connected with the first semiconductor layer through a via hole penetrating the insulating layer.

At least one embodiment of the present disclosure further provides a display apparatus, and the display apparatus includes any one of the light-emitting devices provided by the embodiments of the present disclosure.

At least one embodiment of the present disclosure also provides a backlight apparatus, and the backlight apparatus includes any one of the light-emitting devices provided by the embodiments of the present disclosure.

At least one embodiment of the present disclosure also provides an electronic equipment, and the electronic equipment includes any one of the backlight apparatus provided by the embodiments of the present disclosure.

1 FIG.A 1 FIG.B 1 FIG.A 1 1 FIGS.A toB 10 1 1 1 2 2 2 1 1 1 1 1 1 2 1 1 2 2 1 2 1 0 2 10 2 1 2 1 2 1 10 2 1 0 2 2 1 2 0 0 2 1 10 10 10 10 10 10 a, b, c, b a a; c a b; a b; a, a a a, a, a a a Exemplarily,is a planar schematic diagram of a structure of a light-emitting device provided by an embodiment of the present disclosure, andis a cross-sectional schematic diagram along a line D-D′in. Referring to, the light-emitting deviceprovided by the present disclosure includes a sub-light-emitting unit U, and the sub-light-emitting unit U includes a first semiconductor layera second semiconductor layera light-emitting layera current spreading layerand a second insulating layer IL(that is, a second insulating layer IL). The second semiconductor layeris stacked with the first semiconductor layerand is made of a material different from a material of the first semiconductor layerthe light-emitting layeris located between the first semiconductor layerand the second semiconductor layerthe current spreading layeris located on a side of the first semiconductor layeraway from the second semiconductor layerthe second insulating layer ILis located between the current spreading layerand the first semiconductor layerand the current spreading layeris electrically connected with the first semiconductor layerthrough a via hole Vpenetrating the second insulating layer IL. An effective light-emitting region of the light-emitting deviceis a region where an operating current is mainly distributed and a region where light is emitted, the effective light-emitting region is substantially the region where the current spreading layerdirectly contacts with the first semiconductor layer, or a region slightly larger than the region where the current spreading layerdirectly contacts with the first semiconductor layertherefore, the effective light-emitting area can be represented by an area of the part where the current spreading layeris in direct contact with the first semiconductor layerthus in the light-emitting deviceprovided by the embodiment of the present disclosure, since the current spreading layeris electrically connected with the first semiconductor layerthrough the via hole Vpenetrating the second insulating layer IL, the part of the current spreading layerthat is in direct contact with the first semiconductor layeris only a part of the current spreading layerlocated in the via hole V, the area of this part is small, is substantially equal to a range of a shape of an orthographic projection of the via hole Von the horizontal plane, thus, an area of the part where the current spreading layeris in direct contact with the first semiconductor layeris reduced, therefore, the effective light-emitting area of the light-emitting deviceis reduced. Current density=I/S, I is an operating current when the light-emitting deviceemits light, and S is an effective light-emitting area of the light-emitting device; since the effective light-emitting area S is reduced in the light-emitting deviceprovided by the embodiment of the present disclosure, the current density during the operation of the light-emitting deviceis improved, so that the light-emitting deviceis made to operate in a stable state, and the light-emitting efficiency is improved.

2 1 2 1 1 1 a a a b It should be noted that the area of the part of the current spreading layerthat is in direct contact with the first semiconductor layerrefers to an area of an orthographic projection of the part of the current spreading layerthat is in direct contact with the first semiconductor layeron the horizontal plane, the direction along which the first semiconductor layerand the second semiconductor layerare stacked is a longitudinal direction, and the plane perpendicular to the longitudinal direction is a horizontal plane.

10 101 1 1 101 101 a b For example, the light-emitting devicefurther includes a base substrate, the first semiconductor layerand the second semiconductor layerare stacked on a main surface of the base substrate. For example, the base substratecan be a sapphire substrate, a GaAs substrate, a GaN substrate, a SiC substrate, a Si substrate, a glass substrate, a quartz substrate, the embodiment of the present disclosure does not limit the material of the base substrate, and those skilled in the art can select it as needed.

10 1 c For example, the light-emitting deviceis a Mini Light Emitting Diode (referred to as a Mini LED) or a Micro Light Emitting Diode (referred to as a Micro LED). For example, a size of the Mini Light Emitting Diode (referred to as the Mini LED) is approximately 100 μm to 300 μm. A size of the Micro Light Emitting Diode (referred as the Micro LED for short) is less than 100 μm. For example, the first semiconductor material is a P-type semiconductor material, and the second semiconductor material is an N-type semiconductor material. Alternatively, the first semiconductor material is an N-type semiconductor material, and the second semiconductor material is a P-type semiconductor material. Electrons and holes are combined in the light-emitting layerdriven by current, to convert electrical energy into light energy to emit light.

2 1 c For example, the material of the current spreading layeris a transparent conductive material, which can transmit the light emitted by the light-emitting layer. The transparent conductive material can be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, aluminum zinc oxide, gallium zinc oxide, etc., but are not limited to the above listed types, and the embodiments of the present disclosure do not limit the types of transparent conductive materials.

1 FIG.A 0 0 1 0 2 1 2 0 0 0 Referring to, for example, a shape of an orthographic projection of the via hole Von the horizontal plane may be point-like. For example, a size of an orthographic projection shape of the via hole Von the horizontal plane in the first direction Dis equal to a size of an orthographic projection shape of the via hole Von the horizontal plane in the second direction D, and the first direction Dis perpendicular to the second direction D. For example, the shape of the orthographic projection of via hole Von the horizontal plane is circular, the circular via hole Vcan make the effective light-emitting region emit light more uniformly in all directions. Of course, the shape of the orthographic projection of the via hole Von the horizontal plane is a regular shape or an irregular shape, and the regular shape includes at least one of circular, polygonal and elliptical.

0 1 1 1 0 2 1 1 0 10 a a For example, the size of the orthographic projection shape of the via hole Von the horizontal plane in the first direction Dis less than ¼ of the size of the first semiconductor layerin the first direction D, and the size of the orthographic projection shape of the via hole Von the horizontal plane in the second direction Dis less than ¼ of the size of the first semiconductor layerin the first direction D, so that the opening area of the via hole Vis smaller, and thus it is ensured that the effective light-emitting area of the light-emitting deviceis small.

2 FIG. 0 0 1 1 1 0 0 a Referring to, for example, the shape of the orthographic projection of the via hole Von the horizontal plane can also be a polygon, such as a rectangle, in this case, the size of the orthographic projection shape of the via hole Von the horizontal plane in the first direction Dis smaller than the size of the first semiconductor layerin the first direction D. Of course, the shape of the orthographic projection of the via hole Von the horizontal plane can also be a square, or other polygons, such as a triangle, a pentagon, etc., and the shape of the orthographic projection of the via hole Von the horizontal plane is not limited to the above-mentioned types.

3 FIG. 0 0 1 1 1 0 1 1 1 a a Referring to, for example, the shape of the orthographic projection of the via hole Von the horizontal plane is a long strip; for example, the size of the orthographic projection shape of the via hole Von the horizontal plane in the first direction Dis less than ½ of the size of the first semiconductor layerin the first direction D, even the size of the orthographic projection shape of the via hole Von the horizontal plane in the first direction Dis smaller than ¼ of the size of the first semiconductor layerin the first direction D.

2 3 FIGS.and 1 1 FIGS.A toB Other features ofare the same as those of the embodiment shown in, which can refer to the previous descriptions.

1 1 FIGS.A toB 2 1 1 2 10 10 10 a a , for example, an area of the orthographic projection of the current spreading layeron the horizontal plane is smaller than an area of the orthographic projection of the first semiconductor layeron the horizontal plane, and is located within the orthographic projection of the first semiconductor layeron the horizontal plane, so as to effectively reduce the area of the current spreading layer, therefore, a space range in which the current can be expanded is limited, which facilitates reducing the effective light-emitting area of the light-emitting device, increasing the current density of the light-emitting device, and improving the light-emitting efficiency of the light-emitting device.

1 1 FIGS.A toB 2 1 2 0 1 2 2 0 2 10 10 10 a Referring to, for example, the area of the orthographic projection of the current spreading layeron the horizontal plane is less than ½ of the area of the orthographic projection of the first semiconductor layeron the horizontal plane; furthermore, in at least one direction in the horizontal plane, the size of the current spreading layerdoes not exceed two times of the size of the via hole V; for example, in both the first direction Dand the second direction D, the size of the current spreading layerdoes not exceed two times of the size of the via hole V, so as to further reduce the area of the current spreading layer, therefore, the space range in which the current can be expanded is limited, which facilitate reducing the effective light-emitting area of the light-emitting device, increasing the current density of the light-emitting device, and improving the light-emitting efficiency of the light-emitting device.

1 FIG.A 1 FIG.A 2 0 10 2 Referring to, for example, the shape of the orthographic projection of the current spreading layeron the horizontal plane is substantially the same as the shape of the orthographic projection of the via hole Von the horizontal plane and remains consistent. For example, in, both are circular, but of course they can also be in other shapes. In this way, the operating current I of the light-emitting deviceis evenly distributed in all directions, fully ensuring consistency of the light-emitting performance of the current spreading layerin all directions, which facilitates fully improving the light-emitting efficiency of the effective luminous region in all directions, improving the overall light-emitting efficiency of the light-emitting device, and avoiding the problem of low light-emitting efficiency in some positions due to uneven distribution of the operating current I.

1 FIG.B 5 5 FIGS.A toB 10 1 2 1 2 2 1 1 1 1 2 1 1 1 1 1 10 1 1 1 1 1 b, a a, a a b a a a. Referring to, for example, the light-emitting deviceincludes a first electrodeand a second electrode. The first electrodeis electrically connected with the current spreading layer; the second electrodeis electrically connected with the second semiconductor layerand an orthographic projection of the first electrodeon the horizontal plane and an orthographic projection of the first semiconductor layeron the horizontal plane are at least partially overlapped, and the first electrodeand the current spreading layerare directly electrically connected through the first via hole Vinstead of implementing the electrical connection, for example, through an internal bridge electrode. For example, there are no other conductive structures between the first electrodeand the first semiconductor layerthe first electrodeand the first semiconductor layerare not electrically connected through other structures such as internal bridge electrodes, compared with the embodiment ofdescribed below, the internal bridge electrode and the interlayer insulating layer used to insulate the internal bridge electrode from the second semiconductor layer are removed, thus the structure of the light-emitting deviceis simplified, thus a flat structure can be formed on the surface of the first semiconductor layeraway from the second semiconductor layer(that is, above the first semiconductor layer), the ejector pin used to transfer the light-emitting device can be used to act on the flat structure, to reduce damage to the structure of the platform above the first semiconductor layerand the first semiconductor layer

4 FIG.A 4 FIG.B 4 FIG.A 4 4 FIGS.A toB 1 1 FIGS.A toB is a planar schematic diagram of a structure of still another light-emitting device provided by an embodiment of the present disclosure; andis a cross-sectional schematic diagram along a line D-D′in. The light-emitting device shown inand the light-emitting device shown inhave the following differences.

4 4 FIGS.A toB 2 1 2 1 2 1 0 2 2 1 1 10 2 1 2 1 2 2 1 10 10 10 a a a a a, a, a, a Referring to, for example, the orthographic projection of the current spreading layeron the horizontal plane substantially coincides with the orthographic projection of the first semiconductor layeron the horizontal plane, that is, the orthographic projection of the current spreading layeron the horizontal plane and the orthographic projection of the first semiconductor layeron the horizontal plane have a same shape, a same size, and are overlapped with each other. In this case, since the current spreading layeris only electrically connected with the first semiconductor layerthrough the via hole Vpenetrating the second insulating layer IL, instead of an entire surface of the current spreading layerfacing the first semiconductor layerbeing in contact with the first semiconductor layertherefore, a region of the light-emitting devicewhere the operating current is distributed is only the region where the current spreading layeris in direct contact with the first semiconductor layeror a region slightly larger than the part where the current spreading layeris in direct contact with the first semiconductor layerwhile the operating current will not extend to the entire current spreading layer, therefore, in the case where the orthographic projection of the current spreading layeron the horizontal plane substantially coincides with the orthographic projection of the first semiconductor layeron the horizontal plane, the effective light-emitting area of the light-emitting devicecan also be reduced, the current density of the light-emitting devicecan be increased, and the light-emitting efficiency of the light-emitting devicecan be improved.

4 4 FIGS.A toB 1 1 FIGS.A toB 1 1 FIGS.A toB Other structures and corresponding technical effects of the light-emitting device shown inare the same as those of the light-emitting device shown in, and the descriptions of the light-emitting devices shown incan be referred.

5 FIG.A 5 FIG.B 5 FIG.A 5 5 FIGS.A toB 4 4 FIGS.A toB is a planar schematic diagram of a structure of still another light-emitting device provided by an embodiment of the present disclosure; andis a cross-sectional schematic diagram along a line D-D′in. The light-emitting device shown inand the light-emitting device shown inhave the following differences.

5 5 FIGS.A toB 4 4 FIGS.A toB 10 1 2 1 1 2 1 1 2 1 2 1 10 4 4 1 1 1 0 1 4 1 4 1 4 1 101 1 1 4 10 b a b, b a, a a Referring to, for example, the light-emitting devicefurther includes a first electrode, a second electrodeand a first insulating layer IL. The first electrodeis electrically connected with the current spreading layerthrough the first via hole Vpenetrating the first insulating layer IL; the second electrodeis electrically connected with the second semiconductor layerthrough the second via hole Vpenetrating the first insulating layer IL. For example, the light-emitting devicefurther includes an internal bridge electrode, the internal bridge electrodeis located on the side of the first semiconductor layeraway from the second semiconductor layerand is insulated from the second semiconductor layerby the interlayer insulating layer IL; the first electrode Ois electrically connected with the internal bridge electrodethrough the first via hole V, and the internal bridge electrodeis electrically connected with the first semiconductor layerfor example, the internal bridge electrodeis directly in contact with and connected with the surface of the first semiconductor layeraway from the base substrate, thus the first electrodeis electrically connected with the first semiconductor layerthrough the internal bridge electrode. The light-emitting deviceprovided in this embodiment can achieve a same technical effect as shown inin terms of reducing the effective light-emitting area and improving the light-emitting efficiency.

5 5 FIGS.A toB 4 4 FIGS.A toB 4 4 FIGS.A toB Other structures and corresponding technical effects of the light-emitting device shown inare the same as those of the light-emitting device shown in, and the descriptions of the light-emitting device shown incan be referred.

10 10 The above embodiment shows the case where the light-emitting deviceonly includes one sub-light-emitting unit U, that is, the light-emitting deviceis a single LED light-emitting chip. The following describes a case where a light-emitting device includes a plurality of sub-light-emitting units U.

6 FIG.A 6 FIG.B 6 FIG.A 6 6 FIGS.A toB 1 1 FIGS.A toB is a planar schematic diagram of a structure of still another light-emitting device provided by an embodiment of the present disclosure; andis a cross-sectional schematic diagram along a line E-E′ in. The light-emitting device shown inhas the following differences from the light-emitting device shown in.

6 6 FIGS.A toB 10 10 5 1 1 5 1 a b a Referring to, the light-emitting deviceincludes a plurality of sub-light-emitting units, for example, the plurality of sub-light-emitting units include a first sub-light-emitting unit A and a second sub-light-emitting unit B; the light-emitting devicefurther includes a bridge electrode, which electrically connects the first semiconductor layerof the first sub-light-emitting unit A and the second semiconductor layerof the second sub-light-emitting unit B; a first end of the bridge electrodeis electrically connected with the first semiconductor layerof the first sub-light-emitting unit A, so that a PN junction of the first sub-light-emitting unit A and a PN junction of the second sub-light-emitting unit B are connected in series, and a high-voltage light-emitting device, such as a high-voltage Mini LED or a high-voltage Micro LED, is constructed.

6 6 FIGS.A toB 1 1 FIGS.A toB 1 2 2 1 1 2 2 1 2 2 a a a b a Referring to, for example, in the first sub-light-emitting unit A and the second sub-light-emitting unit B, the situation is similar to, the current spreading layer is electrically connected with the first semiconductor layerthrough a via hole penetrating the second insulating layer IL. In the first sub-light-emitting unit A, the current spreading layeris electrically connected with the first semiconductor layerthrough the first sub-via hole Vpenetrating the second insulating layer IL, and in the second sub-light-emitting unit B, the current spreading layeris electrically connected with the first semiconductor layerthrough the second sub-via hole Vpenetrating the second insulating layer IL, to reduce the effective light-emitting area of each of the sub-light-emitting units and increase the current density, therefore, the light-emitting device can be operated in a stable state, and the light-emitting efficiency can be improved.

5 2 1 2 1 1 5 2 5 1 2 2 2 1 a a a a a b 6 FIG.B A first end of the bridge electrodeis in direct contact with at least one of the current spreading layerof the first sub-light-emitting unit A and the first semiconductor layerof the first sub-light-emitting unit A. For example, as shown in, in the first sub-light-emitting unit A, in the case where an area of an orthographic projection of the current spreading layeron the horizontal plane is smaller than an area of an orthographic projection of the first semiconductor layeron the horizontal plane, and is located within the orthographic projection of the first semiconductor layeron the horizontal plane, the first end of the bridge electrodeis in direct contact with the current spreading layerof the first sub-light-emitting unit A to achieve electrically connection, thus, the first end of the bridge electrodeis electrically connected with the first semiconductor layerof the first sub-light-emitting unit A; for example, in the second sub-light-emitting unit B, the second electrodeis in direct contact with the current spreading layerof the second sub-light-emitting unit B through the via hole Vpenetrating the first insulating layer ILto achieve electrically connection.

1 2 1 2 1 5 1 1 1 5 0 6 FIG.A 6 FIG.A As the effective light-emitting area is reduced, the electrostatic discharge (ESD) capability of the light-emitting device decreases sharply, this is, an actual position where ESD occurs usually occurs in the effective light-emitting region, that is, the positions of the first sub-via holes Vand V, and the positions of the first sub-via holes Vand Vare prone to breakdown. For example, in, the first sub-light-emitting unit A and the second sub-light-emitting unit B are arranged in the first direction D, a planar pattern of the bridge electrodeis in a shape of a strip extending along the first direction D. After testing, it has been found that the electrostatic charge accumulated at the via hole Vis substantially conducted from the via hole Valong the first direction and is released (a direction indicated by a black arrow marked on the bridge electrodein), and the current from electrostatic discharge will flow in a path of lowest resistance, since the light-emitting region is made of transparent conductive materials such as ITO, ITO has poor conductivity compared to metals, and a single path can easily cause charge accumulation, and ESD breakdown of an operation film layer where the via hole Vis located is avoided.

6 6 FIGS.A toB For other unmentioned structures of each of the sub-light-emitting units in, the descriptions of a single sub-light-emitting unit in the previous embodiments can be referred.

7 FIG.A 7 FIG.B 7 FIG.A 7 7 FIGS.A toB 6 6 FIGS.A toB is a planar schematic diagram of a structure of still another light-emitting device provided by an embodiment of the present disclosure; andis a schematic diagram of the current flow of the light-emitting device shown in. The light-emitting device shown inhas the following differences from the light-emitting device shown in.

7 FIG.A 7 FIG.B 7 FIG.B 5 50 50 0 0 0 50 0 10 0 Referring to, for example, a first end of the bridge electrodeincludes an annular part, the annular partat least partially surrounds the above-mentioned via hole Vof the first sub-light-emitting unit A. In this way, referring to, during a release process of the static electricity accumulated at the via hole V, a current path can flow evenly around the via hole V, that is, the current can be radiated in radial directions (the directions indicated by a plurality of arrows in) through the annular partsurrounding the via hole V, so that the static electricity is quickly released, the ESD performance of the light-emitting deviceis improved, the above-mentioned problem of poor ESD performance can be effectively alleviated or avoided, and ESD breakdown of the operation film layer where the via hole Vis located can be avoided.

7 FIG.A 50 0 0 0 0 For example, in, the annular partsurrounds the entire via hole V, in this case, the annular part is a closed annular shape to improve the electrostatic discharge capability in all directions around the via hole V, the electrostatic discharge effect is better ensured and the above-mentioned problem of poor ESD performance is effectively alleviated or avoided, and it is better to avoid ESD breakdown on the operation film layer where the via hole Vis located. Or in other embodiments, the annular part may be an unclosed annular shape, and can still effectively improve the ESD capability of the effective light-emitting region where the via hole Vof the light-emitting device is located.

7 FIG.A 2 1 1 50 2 1 50 1 2 2 5 1 50 1 1 a a a a a a a As shown in, in the case where the area of the orthographic projection of the current spreading layeron the horizontal plane is smaller than the area of the orthographic projection of the first semiconductor layeron the horizontal plane, and is located within the orthographic projection of the first semiconductor layeron the horizontal plane, for example, the annular partat least partially surrounds the current spreading layerof the first sub-light-emitting unit A, and is in direct contact with the first semiconductor layerof the first sub-light-emitting unit A, that is, the annular partis in direct contact with a part of the first semiconductor layerof the first sub-light-emitting unit A that is exposed by the current spreading layerand the second insulating layer IL, to reduce a connection resistance between the bridge electrodeand the first semiconductor layerof the first sub-light-emitting unit A. For example, a surface (for example, an entire surface) of the annular partfacing the first semiconductor layerof the first sub-light-emitting unit A is in direct contact with a surface of the first semiconductor layerof the first sub-light-emitting unit A facing the annular part.

2 1 1 2 50 1 a a a Or, in other embodiments, in the case where the area of the orthographic projection of the current spreading layeron the horizontal plane is smaller than the area of the orthographic projection of the first semiconductor layeron the horizontal plane, and is located within the orthographic projection of the first semiconductor layeron the horizontal plane, a second insulating layer ILis provided between the annular partand the first semiconductor layerof the first sub-light-emitting unit A.

2 1 0 2 2 2 a For example, in other embodiments, in the case where the orthographic projection of the current spreading layeron the horizontal plane substantially coincides with the orthographic projection of the first semiconductor layeron the horizontal plane, the annular part at least partially surrounds the via hole Vof the first sub-light-emitting unit A and is in contact with the current spreading layer. For example, the surface of the annular part facing the current spreading layerof the first sub-light-emitting unit A is in direct contact with the surface of the current spreading layerof the first sub-light-emitting unit A facing the annular part, for example, the two surfaces are bonded to each other.

7 FIG.A 50 50 0 0 50 50 0 50 For example, referring to, a line width l1 in a radial direction of the annular partis greater than a distance l2 from an inner ring of the annular partclose to the via hole Vto the center of the via hole V, to effectively ensure sufficient hole diameter for electrostatic discharge and improve the effect of ESD. The radial direction refers to a direction from the center of the annular partto a circumference of the annular part, that is, the direction from the via hole Vto the annular part.

50 0 At least part of an outer contour shape of the annular partis substantially the same as a shape of an orthographic projection of the via hole Von the horizontal plane, for example, they are concentric rings, for example, they are circular rings in a whole, or they are all rectangular rings, elliptical rings, etc., the embodiments of the present disclosure do not limit the specific shapes of the annular part and the via hole.

8 FIG.A 8 FIG.A 7 7 FIGS.A toB is a planar schematic diagram of a structure of still another light-emitting device provided by an embodiment of the present disclosure. The light-emitting device shown inhas the following differences from the light-emitting devices shown in.

8 FIG.A 10 5 1 5 1 a b Referring to, the light-emitting deviceincludes a plurality of bridge electrodes, a first end of each of the plurality of bridge electrodesis electrically connected with the first semiconductor layerof the first sub-light-emitting unit A, for example, a second end of each of the plurality of bridge electrodesopposite to the first end is electrically connected with the second semiconductor layerof the second sub-light-emitting unit B. In this way, the plurality of bridge electrodes connected in parallel can reduce a resistance of the signal transmission path between two sub-light-emitting units electrically connected through the plurality of bridge electrodes, so that the signal efficiency is improved, and the disadvantages caused by heating caused by resistance are reduced.

For example, a first end of at least one bridge electrode of the plurality of bridge electrodes includes the above-mentioned annular part, here, the characteristics and corresponding technical effects of each of the annular parts are the same as in the previous embodiments, the previous descriptions can be referred, which will not be repeated herein.

8 FIG.A 51 52 51 52 1 5 1 a b Referring to, for example, the plurality of bridge electrodes include a first bridge electrodeand a second bridge electrode, a first end of the first bridge electrodeand a first end of the second bridge electrodeare both electrically connected with the first semiconductor layerof the first sub-light-emitting unit A, for example, the second end of each of the plurality of bridge electrodesopposite to the first end is electrically connected with the second semiconductor layerof the second sub-light-emitting unit B.

8 FIG.A 7 7 FIGS.A toB 8 FIG.A 8 FIG.A 51 52 5 0 1 1 1 2 10 2 1 2 1 1 2 51 52 510 51 1 52 2 1 2 a, b, a; a Referring to, for example, the first bridge electrodeand the second bridge electrodemay respectively have the same structure as the single bridge electrodein the previous embodiments. The first sub-light-emitting unit A includes a plurality of via holes with a same structure as the above-mentioned via hole V, the structures of the first semiconductor layerthe second semiconductor layerthe light-emitting layer and the second insulating layer of the first sub-light-emitting unit A are the same as those in the embodiment shown in. For example, referring to, the plurality of via holes include a first sub-via hole Vand a second sub-via hole V, the light-emitting deviceshown inalso includes a second insulating layer located between the current spreading layerand the first semiconductor layerin the first sub-light-emitting unit A, the current spreading layeris electrically connected with the first semiconductor layerthrough the first sub-via hole Vpenetrating the second insulating layer and the second sub-via hole Vpenetrating the second insulating layer; the first end of the first bridge electrodeand the first end of the second bridge electrodeboth include an annular part, the annular partof the first end of the first bridge electrodeat least partially surrounds the first sub-via hole Vof the first sub-light-emitting unit A, and the annular part of the first end of the second bridge electrodeat least partially surrounds the second sub-via hole Vof the first sub-light-emitting unit A. Thus, for each of the effective light-emitting regions, that is, substantially, an area where each of the first sub-via hole Vand the second sub-via hole Vthat penetrate the second insulating layer is located, it can enhance its ESD capability, and the operation film layer in each of the effective light-emitting regions is effectively prevented from being electrically broken down.

8 FIG.A 7 7 FIGS.A toB Other characteristics of the embodiment shown inthat are not mentioned are the same as those of.

8 FIG.B 8 FIG.B 8 FIG.A is a planar schematic diagram of a structure of still another light-emitting device provided by an embodiment of the present disclosure. The light-emitting device shown inhas the following differences from the light-emitting device shown in.

8 FIG.B 8 FIG.B 21 22 1 1 2 21 22 1 1 1 1 21 22 1 51 21 52 22 1 2 2 1 2 21 22 21 22 1 2 21 22 1 2 a a a a a a Referring to, in the case where the light-emitting device in theincludes a plurality of bridge electrodes, the first sub-light-emitting unit A includes a plurality of spreading layers, the plurality of spreading layers include a first spreading layerand a second spreading layerthat are electrically connected with the first semiconductor layerof the first sub-light-emitting unit A through the first sub-via hole Vand the second sub-via hole Vrespectively, areas of orthographic projections of the first spreading layerand the second spreading layeron the horizontal plane are both smaller than an area of the orthographic projection of the first semiconductor layeron the horizontal plane, for example, are less than ½ of the area of the orthographic projection of the first semiconductor layeron the horizontal plane, for example, less than ¼ of the area of the orthographic projection of the first semiconductor layeron the horizontal plane, in short, they are all much smaller than the area of the orthographic projection of the first semiconductor layeron the horizontal plane, and the orthographic projections of the first spreading layerand the second spreading layeron the horizontal plane are both located within the orthographic projection of the first semiconductor layeron the horizontal plane, an annular part of a first end of the first bridge electrodeat least partially surrounds the first spreading layer, and an annular part of a first end of the second bridge electrodeat least partially surrounds the second spreading layer. That is, in a sub-light-emitting unit, the plurality of via holes V/Vpenetrating the second insulating layer respectively correspond to a plurality of sub-current spreading layers, in other words, in a sub-light-emitting unit, the current spreading layerincludes a plurality of parts corresponding to the plurality of via holes V/Vpenetrating the second insulating layer. Thus, for each of the sub-spreading layers such as the first spreading layerand the second spreading layer, it is not only beneficial to improve efficiency of electrostatic discharge in the parts of the first spreading layerand the second spreading layerrespectively located in the corresponding via holes V/V, and but also makes it easy to efficiently realize electrostatic discharge in the parts of the entire first spreading layerand the second spreading layerlocated outside the corresponding via holes V/V, therefore, for each of the spreading layers, the effective light-emitting region where the entire spreading layer is located can easily and efficiently realize electrostatic discharge.

8 FIG.B 8 FIG.A Other unmentioned characteristics of the light-emitting device shown inare the same as those in.

9 FIG.A 9 FIG.A 9 FIG.B 9 FIG.B 9 FIG.B 1 1 51 5 1 1 51 1 1 51 1 5 5 51 11 51 51 51 51 51 1 2 5 2 a a b is a planar schematic diagram of a structure of still another light-emitting device provided by an embodiment of the present disclosure. In, the first semiconductor layerof the first sub-light-emitting unit A has a first edge Eclose to the second sub-light-emitting unit B, an angle θ between the extension direction of the bridge partof the bridge electrodeacross the first edge Eand the first edge Eis an acute angle, therefore, starting from a position where the bridge partis overlapped with the first edge E, along the first direction D, the bridge parthas a part in which an overlapping area with the first semiconductor layerof the first sub-light-emitting unit A gradually increases.shows the analysis of 5 cross-sections (dashed lines) of No. 1 to 5 on the left side, and the 5 cross-sections are shown in the electron microscopy images on the right side of No. 1 to 5 in sequence. As shown in, in this part, during the process of manufacturing the bridge electrode, for example, in the process of forming the bridge electrodethrough a deposition process or the like, it is very easy to form discontinuous islands near the position where the bridge partis overlapped with the first edge E, and the bridge partis likely to have a tip protrusion near this position. There is a tip protrusion of the bridge partin the dotted box in, furthermore, in No. 1 to No. 4, a right side of the bridge partis discontinuous, and a thickness of the entire bridge partis uneven. Until the lowest position, as shown in the cross-section diagram of No. 5, the thickness of the bridge partat the No. 5 cross-section line position becomes relatively uniform. In this way, the film layers such as the second insulating layer formed on the tip protrusion are very prone to cracking, which affects the insulation effect and leads to leakage, moreover, sealing performance of the light-emitting device is poor, which brings serious problems to the performance of the light-emitting device. Similarly, the second semiconductor layerof the second sub-light-emitting unit B has a second edge Eclose to the first sub-light-emitting unit A, the same applies to the part where the second end of the bridge electrodecrosses the second edge E.

10 FIG. 10 FIG. 1 5 1 5 5 5 5 5 1 5 501 502 1 1 5 1 1 1 1 2 1 501 502 501 1 502 1 502 1 502 51 1 1 502 1 502 a. a a a a a a a a a a In this regard,is a planar schematic diagram of a structure of still another light-emitting device provided by an embodiment of the present disclosure. Referring to, for example, the first sub-light-emitting unit A and the second sub-light-emitting unit B are arranged in the first direction D, a single bridge electrodeextends along the first direction Das a whole. For the single bridge electrode, the bridge electrodeincludes a first extension partAn orthographic projection of the first extension parton the horizontal plane is overlapped with an orthographic projection of the first sub-light-emitting unit A on the horizontal plane, for example, the orthographic projection of the first extension parton the horizontal plane is overlapped with the orthographic projection of the first semiconductor layerof the first sub-light-emitting unit A. The first extension partincludes a first partand a second partthat are connected with each other; the first semiconductor layerof the first sub-light-emitting unit A has a first edge Eclose to the second sub-light-emitting unit B; for example, the first extension partextends across the first edge Eof the first sub-light-emitting unit A along the first direction D, to be overlapped with the first semiconductor layerof the first sub-light-emitting unit A; for example, the first edge Eextends along the second direction D; an orthographic projection of the first edge Eon the horizontal plane is a boundary between an orthographic projection of the first parton the horizontal plane and an orthographic projection of the second parton the horizontal plane, the orthographic projection of the first parton the horizontal plane is overlapped with the orthographic projection of the first semiconductor layerof the first sub-light-emitting unit A on the horizontal plane, the orthographic projection of the second parton the horizontal plane is not overlapped with the orthographic projection of the first semiconductor layerof the first sub-light-emitting unit A on the horizontal plane; an extension direction of the second partis substantially perpendicular to the first edge E. In this way, starting from the position where the second partof the bridge electrode (equivalent to a part of the above-mentioned bridge electrode) is overlapped with the first edge E, along the first direction D, the second portionhas an overlapping area with the first semiconductor layerof the first sub-light-emitting unit A that remains substantially constant, a thickness of the second partis uniform, and there are no gradual islands, it is not easy to produce the above-mentioned tip protrusion during the manufacturing process of the bridge electrode, therefore, the second insulating layer formed above the bridge electrode is not prone to cracking, and the above-mentioned problems of leakage, poor sealing, and uneven thickness of the bridge electrode are avoided.

5 5 5 5 503 504 1 2 5 2 1 1 2 503 504 503 1 504 1 504 2 504 51 2 1 504 1 504 b, b b b b b b b For example, for a single bridge electrode, the bridge electrodeincludes a second extension partthe second extension partincludes a third partand a fourth partthat are connected with each other, the second semiconductor layerof the second sub-light-emitting unit B has a second edge Eclose to the first sub-light-emitting unit A. For example, the second extension partextends across the second edge Eof the second sub-light-emitting unit B along the first direction D, to be overlapped with the second semiconductor layerof the second sub-light-emitting unit B. An orthographic projection of the second edge Eon the horizontal plane is a boundary between an orthographic projection of the third parton the horizontal plane and an orthographic projection of the fourth parton the horizontal plane, the orthographic projection of the third parton the horizontal plane is overlapped with the orthographic projection of the second semiconductor layerof the second sub-light-emitting unit B on the horizontal plane, the orthographic projection of the fourth parton the horizontal plane is not overlapped with the orthographic projection of the second semiconductor layerof the second sub-light-emitting unit B on the horizontal plane; and an extension direction of the fourth portionis substantially perpendicular to the second edge E. Therefore, similarly, starting from a position where the fourth partof the bridge electrode (equivalent to a part of the second end of the bridge electrode similar to the bridge electrode) is overlapped with the second edge E, along the first direction D, the fourth portionhas an overlapping area with the second semiconductor layerof the second sub-light-emitting unit B that remains substantially constant, a thickness of the fourth partis uniform, and there are no gradual islands, it is not easy to produce the above-mentioned tip protrusion during the manufacturing process of the bridge electrode, therefore, the second insulating layer formed above the bridge electrode is not prone to cracking, and the above-mentioned problems of leakage, poor sealing, and uneven thickness of the bridge electrode are avoided.

10 FIG. 5 5 1 51 502 5 5 2 503 504 1 5 5 a b For example, as shown in, the first extension partof the bridge electrodeincludes a first interface portion covering the first edge E, the first interface portion includes the above-mentioned first partand second part, the second extension partof the bridging electrodeincludes a second interface portion covering the second edge E, the second interface portion includes the above-mentioned third partand fourth part; along the first direction D, a thickness of the first interface part is uniform in the longitudinal direction, and a thickness of the second interface part in the longitudinal direction is uniform, therefore, the performance of the bridge electrodeis made more stable, and the signal transmission efficiency on the bridge electrodeis improved.

11 FIG. 11 FIG. 1 5 2 1 2 2 1 5 5 2 1 2 2 5 1 a a is a planar schematic diagram of a structure of still another light-emitting device provided by an embodiment of the present disclosure. Referring to, for example, the first sub-light-emitting units A and the second sub-light-emitting units B are arranged in the first direction D, a length of a first end of the bridge electrodein the second direction Dis greater than ½ of a length of the first semiconductor layerof the first sub-light-emitting unit A in the second direction D, and the second direction Dis perpendicular to the first direction D. For example, the length of the first endA of the bridge electrodein the second direction Dis substantially the same as the length of the first semiconductor layerof the first sub-light-emitting unit A in the second direction D, that is, the longer length in the second direction D, which is beneficial to reducing the resistance of the bridge electrodefor signal conduction along the first direction D.

11 FIG. 5 500 500 500 500 500 1 500 500 500 500 2 1 500 2 1 2 500 2 1 2 5 1 500 5 1 a b, a b a a b a a a Referring to, for example, the bridge electrodeincludes a connection portionand a plurality of branches/a first end of each of the plurality of branches/is electrically connected with the first semiconductor layerof the first sub-light-emitting unit A, and the first ends of the plurality of branches/are all electrically connected with the connection part, the connection partis in direct contact with at least one of the current spreading layerof the first sub-light-emitting unit A and the first semiconductor layerof the first sub-light-emitting unit A, for example, through a via hole contact or, they are directly attached to each other by the entire surfaces facing each other. A length of the connection portionin the second direction Dis greater than ½ of the length of the first semiconductor layerof the first sub-light-emitting unit A in the second direction D, for example, the length of the connection portionin the second direction Dand the length of the first semiconductor layerof the first sub-light-emitting unit A in the second direction Dare substantially the same. In this way, the plurality of branches are connected in parallel to further reduce the resistance of the bridge electrodefor signal conduction along the first direction D, at the same time, the length of the connection portionis longer, which is beneficial to reducing the resistance of the bridge electrodefor signal transmission along the first direction D.

11 FIG. 500 2 Referring to, for example, the connection portionis located in an edge region of the first sub-light-emitting unit A close to the second sub-light-emitting unit B and is in a strip shape extending along the second direction D, so that the signal transmission path of the bridge electrode is shortened, and the resistance of the bridge electrode is reduced.

12 FIG. 12 FIG. 1000 1000 10 1000 10 At least one embodiment of the present disclosure also provides a display apparatus,is a schematic diagram of an electronic equipment provided by an embodiment of the present disclosure. Referring to, in a display apparatusprovided by an embodiment of the present disclosure, the display apparatusincludes any one of the light-emitting devicesprovided by the embodiments of the present disclosure. For example, the display apparatusincludes a light emitting array, the light-emitting array includes a plurality of light-emitting devicesarranged in an array. For example, the display apparatus can be: a monitor, a display panel, a TV, an electronic paper, a mobile phone, a tablet computer, a laptop computer, a digital photo frame, a navigator, or any other product or component with a display function. Of course, the display apparatus is not limited to the types listed above.

13 FIG. 13 FIG. 100 10 100 100 10 At least one embodiment of the present disclosure further provides a backlight apparatus,is a schematic block diagram of a backlight apparatus provided by an embodiment of the present disclosure. Referring to, the backlight apparatusprovided by the embodiment of the present disclosure includes any one of the light-emitting devicesprovided by the embodiments of the present disclosure. The backlight apparatuscan be used as a backlight source for any electronic equipment that requires backlight. For example, the backlight apparatusincludes a light emitting array, and the light-emitting array includes a plurality of light-emitting devicesarranged in an array.

100 At least one embodiment of the present disclosure further provides an electronic equipment, and the electronic equipment provided by the embodiment of the present disclosure includes any one of the backlight apparatusesprovided by the embodiments of the present disclosure.

100 For example, the electronic equipment may be a display apparatus, and the backlight apparatusserves as a backlight source of the display apparatus; the display apparatus is, for example, a liquid crystal display apparatus, or any other display apparatus that requires a backlight. For example, the display apparatus can be: a monitor, a display panel, a TV, an electronic paper, a mobile phone, a tablet computer, a laptop computer, a digital photo frame, a navigator, or any other product or component with a display function. Of course, the specific type of the display apparatus is not limited to the types listed above.

100 For example, the electronic equipment may be a lighting device, such as a lamp, and the backlight apparatusserves as a backlight source of the lighting device and provides a light source for the lighting device.

What have been described above are only specific implementations of the present disclosure, the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure should be determined by the protection scope of the claims.