Display Panel and Electronic Apparatus Including the Same

The present application claims priority to, and the benefit of, Korean Patent Application No. 10-2024-0131093, filed on Sep. 26, 2024, in the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference.

One or more embodiments relate to a display panel having an opening area in a display area, and an electronic apparatus including the display panel.

Recently, the usage of display apparatuses has diversified. In addition, as display apparatuses have become thinner and lighter, their range of use has been gradually extended.

Also, as the area occupied by a display area in display apparatuses is expanded, various functions that are combined or associated with display apparatuses have been added. As alternatives for adding various functions while enlarging an area, research into display apparatuses in which various elements may be located in a display area has been carried out.

One or more embodiments provide a display panel having an opening area in a display area and in which various kinds of components may be located and an electronic apparatus including the display panel. However, such a technical objective is just an example, and the disclosure is not limited thereto.

Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments of the disclosure.

According to one or more embodiments, a display panel includes a substrate including an upper surface, and a lower surface opposite the upper surface, and defining an opening passing through the upper surface and the lower surface, an inorganic insulating structure including inorganic insulating layers above the upper surface of the substrate, light-emitting diodes above an upper surface of the inorganic insulating structure, and defining a display area surrounding the opening in a plan view, an encapsulation layer above the light-emitting diodes, and including an inorganic encapsulation layer and an organic encapsulation layer, a trench in a non-display area between the opening of the substrate and the display area, and concavely defined to have a step difference with respect to the upper surface of the inorganic insulating structure, an insulating layer covering the step difference, and a metal layer above the insulating layer, and including a first overhang portion that protrudes toward the trench more than a lateral surface of the insulating layer.

The insulating layer may include an organic insulating material.

One of the light-emitting diodes may include a pixel electrode, an opposite electrode over the pixel electrode, and an intermediate layer between the pixel electrode and the opposite electrode, wherein the intermediate layer includes at least one organic material layer including a first portion on the first overhang portion, and a second portion at a bottom of the trench and separated from the first portion by the first overhang portion.

The display panel may further include a protective layer above the first overhang portion.

The display panel may further include a protective material layer in the trench, separated from the protective layer, and including a same material as the protective layer, wherein the lateral surface of the insulating layer is inclined with respect to a bottom of the trench, and wherein the protective material layer directly contacts the lateral surface of the insulating layer.

The protective layer may include a conductive material.

An upper surface of the first overhang portion may be substantially parallel to the substrate or is tilted downward.

The display panel may further include a partition wall in the non-display area, surrounding the opening of the substrate in the plan view, and between the trench and the display area.

The display panel may further include a first layer between the trench and the display area, including a same material as the insulating layer, and defining a groove therein, and a pair of second layers above the first layer, including a same material as the metal layer, and including an overhang portion protruding toward the groove from a point at which a lower surface of one of the second layers meets an inner surface of the first layer defining a portion of the groove.

According to one or more embodiments, an electronic apparatus includes a display panel and a a component below the display panel and overlapping the opening area. The display panel may include an opening area, a display area surrounding the opening area in a plan view, a substrate including an upper surface, and a lower surface opposite the upper surface, and defining an opening passing through the upper surface and the lower surface and corresponding to the opening area, an inorganic insulating structure including inorganic insulating layers above the upper surface of the substrate, light-emitting diodes above an upper surface of the inorganic insulating structure, and defining the display area, an encapsulation layer above the light-emitting diodes, and including an inorganic encapsulation layer and an organic encapsulation layer, a trench in a non-display area between the opening of the substrate and the display area, and concavely defined to have a step difference with respect to the upper surface of the inorganic insulating structure, an insulating layer covering the step difference, and a metal layer above the insulating layer, and including a first overhang portion that protrudes toward the trench more than a lateral surface of the insulating layer.

The insulating layer may include an organic insulating material.

One of the light-emitting diodes may include a pixel electrode, an opposite electrode over the pixel electrode, and an intermediate layer between the pixel electrode and the opposite electrode, wherein the intermediate layer includes at least one organic material layer including a first portion on the first overhang portion, and a second portion at a bottom of the trench and separated from the first portion by the first overhang portion.

The display panel may further include a protective layer above the first overhang portion.

The display panel may further include a protective material layer in the trench, separated from the protective layer, and including a same material as the protective layer, wherein the lateral surface of the insulating layer is inclined with respect to a bottom of the trench, and wherein the protective material layer directly contacts the lateral surface of the insulating layer.

The protective layer may include a conductive material.

An upper surface of the first overhang portion may be substantially parallel to the substrate or may be tilted downward.

The display panel may include a partition wall in the non-display area, surrounding the opening of the substrate in the plan view, and between the trench and the display area.

The display panel may further include a first layer between the trench and the display area, and defining a groove therein, and a pair of second layers above the first layer, and including an overhang portion protruding toward the groove from a point at which a lower surface of one of the second layers meets an inner surface of the first layer defining a portion of the groove.

The first layer may include a same material as the insulating layer, wherein the second layers include a same material as the metal layer.

The component may include a camera or a sensor.

Aspects of some embodiments of the present disclosure and methods of accomplishing the same may be understood more readily by reference to the detailed description of embodiments and the accompanying drawings. The described embodiments are provided as examples so that this disclosure will be thorough and complete, and will fully convey the aspects of the present disclosure to those skilled in the art. Accordingly, processes, elements, and techniques that are redundant, that are unrelated or irrelevant to the description of the embodiments, or that are not necessary to those having ordinary skill in the art for a complete understanding of the aspects of the present disclosure may be omitted. Unless otherwise noted, like reference numerals, characters, or combinations thereof denote like elements throughout the attached drawings and the written description, and thus, repeated descriptions thereof may be omitted.

The described embodiments may have various modifications and may be embodied in different forms, and should not be construed as being limited to only the illustrated embodiments herein. The use of “can,” “may,” or “may not” in describing an embodiment corresponds to one or more embodiments of the present disclosure.

A person of ordinary skill in the art would appreciate, in view of the present disclosure in its entirety, that each suitable feature of the various embodiments of the present disclosure may be combined or combined with each other, partially or entirely, and may be technically interlocked and operated in various suitable ways, and each embodiment may be implemented independently of each other or in conjunction with each other in any suitable manner unless otherwise stated or implied.

In the drawings, the relative sizes of elements, layers, and regions may be exaggerated for clarity and/or descriptive purposes. In other words, because the sizes and thicknesses of elements in the drawings are arbitrarily illustrated for convenience of description, the disclosure is not limited thereto. Additionally, the use of cross-hatching and/or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, neither the presence nor the absence of cross-hatching or shading conveys or indicates any preference or requirement for particular materials, material properties, dimensions, proportions, commonalities between illustrated elements, and/or any other characteristic, attribute, property, etc., of the elements, unless specified.

Various embodiments are described herein with reference to sectional illustrations that are schematic illustrations of embodiments and/or intermediate structures. As such, variations from the shapes of the illustrations as a result of, for example, manufacturing techniques and/or tolerances, are to be expected. Further, specific structural or functional descriptions disclosed herein are merely illustrative for the purpose of describing embodiments according to the concept of the present disclosure. Thus, embodiments disclosed herein should not be construed as limited to the illustrated shapes of elements, layers, or regions, but are to include deviations in shapes that result from, for instance, manufacturing.

For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place.

Spatially relative terms, such as “beneath,” “below,” “lower,” “lower side,” “under,” “above,” “upper,” “over,” “higher,” “upper side,” “side” (e.g., as in “sidewall”), and the like, may be used herein for ease of explanation to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or in operation, in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below,” “beneath,” “or “under” other elements or features would then be oriented “above” the other elements or features. Thus, the example terms “below” and “under” can encompass both an orientation of above and below. The device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly. Similarly, when a first part is described as being arranged “on” a second part, this indicates that the first part is arranged at an upper side or a lower side of the second part without the limitation to the upper side thereof on the basis of the gravity direction.

Further, the phrase “in a plan view” means when an object portion is viewed from above, and the phrase “in a schematic cross-sectional view” means when a schematic cross-section taken by vertically cutting an object portion is viewed from the side. The terms “overlap” or “overlapped” mean that a first object may be above or below or to a side of a second object, and vice versa. Additionally, the term “overlap” may include stack, face or facing, extending over, covering, or partly covering or any other suitable term as would be appreciated and understood by those of ordinary skill in the art. The expression “not overlap” may include meaning, such as “apart from” or “set aside from” or “offset from” and any other suitable equivalents as would be appreciated and understood by those of ordinary skill in the art. The terms “face” and “facing” may mean that a first object may directly or indirectly oppose a second object. In a case in which a third object intervenes between a first and second object, the first and second objects may be understood as being indirectly opposed to one another, although still facing each other.

It will be understood that when an element, layer, region, or component (e.g., an apparatus, a device, a circuit, a wire, an electrode, a terminal, a conductive film, etc.) is referred to as being “formed on,” “on,” “connected to,” or “(operatively, functionally, or communicatively) coupled to” another element, layer, region, or component, it can be directly formed on, on, connected to, or coupled to the other element, layer, region, or component, or indirectly formed on, on, connected to, or coupled to the other element, layer, region, or component such that one or more intervening elements, layers, regions, or components may be present. In addition, this may collectively mean a direct or indirect coupling or connection and an integral or non-integral coupling or connection. For example, when a layer, region, or component is referred to as being “electrically connected” or “electrically coupled” to another layer, region, or component, it can be directly electrically connected or coupled to the other layer, region, and/or component or one or more intervening layers, regions, or components may be present. The one or more intervening components may include a switch, a transistor, a resistor, an inductor, a capacitor, a diode and/or the like. Accordingly, a connection is not limited to the connections illustrated in the drawings or the detailed description and may also include other types of connections. In describing embodiments, an expression of connection indicates electrical connection unless explicitly described to be direct connection, and “directly connected/directly coupled,” or “directly on,” refers to one component directly connecting or coupling another component, or being on another component, without an intermediate component.

In addition, in the present specification, when a portion of a layer, a film, an area, a plate, or the like is formed on another portion, a forming direction is not limited to an upper direction but includes forming the portion on a side surface or in a lower direction. On the contrary, when a portion of a layer, a film, an area, a plate, or the like is formed “under” another portion, this includes not only a case where the portion is “directly beneath” another portion but also a case where there is further another portion between the portion and another portion. Meanwhile, other expressions describing relationships between components, such as “between,” “immediately between” or “adjacent to” and “directly adjacent to,” may be construed similarly. It will be understood that when an element or layer is referred to as being “between” two elements or layers, it can be the only element or layer between the two elements or layers, or one or more intervening elements or layers may also be present.

For the purposes of this disclosure, expressions such as “at least one of,” or “any one of,” or “one or more of” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. For example, “at least one of X, Y, and Z,” “at least one of X, Y, or Z,” “at least one selected from the group consisting of X, Y, and Z,” and “at least one selected from the group consisting of X, Y, or Z” may be construed as X only, Y only, Z only, any combination of two or more of X, Y, and Z, such as, for instance, XYZ, XY, YZ, and XZ, or any variation thereof. Similarly, the expressions “at least one of A and B” and “at least one of A or B” may include A, B, or A and B. As used herein, “or” generally means “and/or,” and the term “and/or” includes any and all combinations of one or more of the associated listed items. For example, the expression “A and/or B” may include A, B, or A and B. Similarly, expressions such as “at least one of,” “a plurality of,” “one of,” and other prepositional phrases, when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. When “C to D” is stated, it means C or more and D or less, unless otherwise specified.

It will be understood that, although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms do not correspond to a particular order, position, or superiority, and are only used to distinguish one element, member, component, region, area, layer, section, or portion from another element, member, component, region, area, layer, section, or portion. Thus, a first element, component, region, layer or section described below could be termed a second element, component, region, layer or section, without departing from the spirit and scope of the present disclosure. The description of an element as a “first” element may not require or imply the presence of a second element or other elements. The terms “first,” “second,” etc. may also be used herein to differentiate different categories or sets of elements. For conciseness, the terms “first,” “second,” etc. may represent “first-category (or first-set),” “second-category (or second-set),” etc., respectively.

In the examples, the x-axis, the y-axis, and/or the z-axis are not limited to three axes of a rectangular coordinate system, and may be interpreted in a broader sense. For example, the x-axis, the y-axis, and the z-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. The same applies for first, second, and/or third directions.

The terminology used herein is for the purpose of describing embodiments only and is not intended to be limiting of the present disclosure. As used herein, the singular forms “a” and “an” are intended to include the plural forms as well, while the plural forms are also intended to include the singular forms, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “have,” “having,” “includes,” and “including,” when used in this specification, specify the presence of the stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

When one or more embodiments may be implemented differently, a specific process order may be performed differently from the described order. For example, two consecutively described processes may be performed substantially at the same time or performed in an order opposite to the described order.

As used herein, the terms “substantially,” “about,” “approximately,” and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by those of ordinary skill in the art. For example, “substantially” may include a range of +/−5 % of a corresponding value. “About” or “approximately,” as used herein, is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ±30%, 20%, 10%, 5% of the stated value. Further, the use of “may” when describing embodiments of the present disclosure refers to “one or more embodiments of the present disclosure.” Furthermore, the expression “being the same” may mean “being substantially the same”. In other words, the expression “being the same” may include a range that can be tolerated by those of ordinary skill in the art. The other expressions may also be expressions from which “substantially” has been omitted.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and/or the present specification, and should not be interpreted in an idealized or overly formal sense, unless expressly so defined herein.

1 FIG. 1 is a schematic perspective view of an electronic apparatusaccording to one or more embodiments.

1 FIG. 1 FIG. 1 1 1 1 Referring to, the electronic apparatusmay include an apparatus for displaying moving images or still images, and may be used as a display screen of various products including televisions, notebook computers, monitors, advertisement boards, Internet of things (IoTs) as well as portable electronic apparatuses including mobile phones, smartphones, tablet personal computers (PCs), mobile communication terminals, electronic organizers, electronic books, portable multimedia players (PMPs), navigations, and ultra mobile personal computers (UMPCs). In addition, the electronic apparatusmay be used in wearable devices such as smartwatches, watchphones, glasses-type displays, and head-mounted displays (HMDs). In addition, in one or more embodiments, the electronic apparatusmay be used as a display in instrument panels for automobiles, center fascias for automobiles, or center information displays (CIDs) arranged on a dashboard, room mirror displays that replace side mirrors of automobiles, and displays of an entertainment system arranged on the backside of front seats for backseat passengers in automobiles. For convenience of description,shows the case where the electronic apparatusaccording to one or more embodiments is used as a smartphone.

1 1 1 1 FIG. The electronic apparatusmay have a rectangular shape in a plan view. As an example, as shown in, the electronic apparatusmay have in a plan view a quadrangular shape having short sides in the x direction, and long sides in the y direction. A corner where the short side of the x direction meets the long side of the y direction may be rounded to have a corresponding curvature (e.g., preset curvature) or may be formed to have a right angle. A planar shape of the electronic apparatusis not limited to a rectangle, and may be another shape such as a polygon, ellipse, or an irregular shape.

1 1 The electronic apparatusmay include an opening area OA (or a first area), and a display area DA (or a second area) at least surrounding the opening area OA (e.g., in plan view). The electronic apparatusmay include a non-display area MA (or a third area, referred to as an inner non-display area MA hereinafter) adjacent to the opening area OA and located inside the display area DA, and a non-display area PA (or a fourth area, referred to as an outer non-display area PA, hereinafter) provided outside the display area DA. The inner non-display area MA may have a closed loop shape surrounding the opening area OA entirely in a plan view, and may be entirely surrounded by the display area DA. The outer non-display area PA may surround the display area DA entirely in a plan view.

1 FIG. 1 FIG. The opening area OA may be located inside the display area DA. In one or more embodiments, the opening area OA may be located on the upper center of the display area DA as shown in. Alternatively, the opening area OA may be located on the upper left side of the display area DA, or the upper right side of the display area DA. However, the opening area OA may be located on various positions. Although it is shown inthat one opening area OA is located, a plurality of opening areas OA may be located in one or more other embodiments.

2 FIG. 1 FIG. 1 is a schematic cross-sectional view of the electronic apparatustaken along the line I-I′ of, according to one or more embodiments.

2 FIG. 1 10 70 10 10 70 70 10 Referring to, the electronic apparatusmay include a display panel, and a componentlocated in, or overlapping, the opening area OA of the display panel. The display paneland the componentmay be accommodated in a housing HS. For example, the componentmay be below the display paneland overlap the opening area OA.

10 20 40 50 60 The display panelmay include an image-generating layer, an input-sensing layer, an optical functional layer, and a cover window.

20 20 20 The image-generating layermay include a display element (or a light-emitting element) for emitting light to display images. The display element may include, a light-emitting diode, for example, an organic light-emitting diode including an organic emission layer. In one or more other embodiments, the light-emitting diode may be an inorganic light-emitting diode including an inorganic material. The inorganic light-emitting diode may include a PN-junction diode including inorganic semiconductor-based materials. When a forward voltage is applied to a PN-junction diode, holes and electrons are injected, and light of a corresponding color (e.g., preset color) may be emitted while energy created by recombination of the holes and the electrons is converted to light energy. The inorganic light-emitting diode may have a width of several micrometers to hundreds of micrometers, or several nanometers to hundreds of nanometers. In one or more embodiments, the image-generating layermay include a quantum-dot light-emitting diode. As an example, the emission layer of the image-generating layermay include an organic material, an inorganic material, quantum dots, an organic material and quantum dots, or an inorganic material and quantum dots.

40 40 40 20 40 The input-sensing layermay be configured to obtain coordinate information corresponding to an external input, for example, a touch event. The input-sensing layermay include a sensing electrode (or a touch electrode) and trace lines connected to the sensing electrode. The input-sensing layermay be located on the image-generating layer(as used herein, “located on” may mean “above”). The input-sensing layermay sense an external input by using a self-capacitance method and/or a mutual capacitance method.

40 20 20 40 20 40 20 40 20 50 40 50 2 FIG. The input-sensing layermay be directly formed on the image-generating layer, or may be separately formed and then coupled to the image-generating layerby using an optically clear adhesive. As an example, the input-sensing layermay be successively formed after a process of forming the image-generating layer. In this case, an adhesive layer may not be located between the input-sensing layerand the image-generating layer. Although it is shown inthat the input-sensing layeris located between the image-generating layerand the optical functional layer, the input-sensing layermay be located on the optical functional layer.

50 10 60 20 The optical functional layermay include an anti-reflection layer. The anti-reflection layer may reduce the reflectivity of light (external light) incident toward the display panelfrom the outside through the cover window. The anti-reflection layer may include a phase retarder and a polarizer. In one or more other embodiments, the anti-reflection layer may include a black matrix and color filters. The color filters may be arranged by considering colors of lights emitted respectively from the light-emitting diodes of the image-generating layer.

10 10 10 10 20 40 50 20 40 50 20 20 40 40 50 50 10 10 To improve a transmittance of the opening area OA, the display panelmay include, or define, an openingOP passing through some of layers configuring the display panel. The openingOP may include first to third openingsOP,OP, andOP respectively passing through the image-generating layer, the input-sensing layer, and the optical functional layer. The first openingOP of the image-generating layer, the second openingOP of the input-sensing layer, and the third openingOP of the optical functional layermay overlap each other to form the openingOP of the display panel.

60 50 60 50 60 20 20 40 40 50 50 The cover windowmay be located on the optical functional layer. The cover windowmay be coupled to the optical functional layerby an adhesive layer OCA, such as a transparent optical clear adhesive (OCA). The cover windowmay cover the first openingOP of the image-generating layer, the second openingOP of the input-sensing layer, and the third openingOP of the optical functional layer.

60 The cover windowmay include glass or plastic. The glass may include ultra-thin glass. The plastic may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate.

70 1 The opening area OA may be a component area (e.g., a sensor region, a camera region, a speaker region, and/or the like) in which the componentfor adding various functions to the electronic apparatusis located.

70 70 70 70 The componentmay include an electronic element. As an example, the componentmay be an electronic element that uses light or sound. As an example, the electronic element may include a sensor, such as an infrared sensor that uses light, a camera that receives light to capture an image, a sensor that outputs and senses light or sound to measure a distance or recognize a fingerprint, a small lamp that outputs light, and a speaker that outputs sound. The electronic element that uses light may use light in various wavelength bands, such as visible light, infrared light, ultraviolet light and the like. The opening area OA corresponds to an area through which light and/or sound output from the componentto the outside or progressing toward the componentfrom the outside may pass.

3 FIG. 10 is a schematic plan view of the display panelaccording to one or more embodiments.

3 FIG. 10 Referring to, the display panelmay include the opening area OA, the display area DA, the inner non-display area MA, and the outer non-display area PA.

10 The display panelmay include a plurality of pixels PX located in the display area DA, and may display images using light emitted from each of the pixels PX. Each pixel PX may emit red, green, or blue light by using a light-emitting diode. A light-emitting diode of each pixel PX may be electrically connected to a scan line SL and a data line DL.

2100 2200 2100 2100 2100 In the outer non-display area PA, there may be arranged a scan driverfor providing scan signals to each pixel PX, a data driverfor providing data signals to each pixel PX, a first main power wiring and a second main power wiring for respectively providing a first power voltage and a second power voltage. The scan driversmay be respectively located on two opposite sides with the display area DA therebetween. In this case, pixels PX located on the left around the opening area OA may be connected to the scan driverlocated on the left, and pixels PX located on the right around the opening area OA may be connected to the scan driverlocated on the right.

10 10 3 FIG. The inner non-display area MA may surround the opening area OA. The inner non-display area MA is a region in which a display element, such as a light-emitting diode for emitting light, is not located. Signal lines may pass across the inner non-display area MA, wherein the signal lines provide signals to pixels PX provided around the opening area OA. As an example, data lines DL and/or scan lines SL cross the display area DA, and some of the data lines DL and/or scan lines SL may detour the inner non-display area MA along the edge of the openingOP of the display panelformed in the opening area OA. In one or more embodiments, it is shown inthat the data lines DL cross the display area DA in a y direction, and some of the data lines DL detour the inner non-display area MA to partially surround the opening area OA. The scan lines SL cross the display area DA in an x direction, and may be apart from each other with the opening area OA therebetween.

3 FIG. 2200 100 2200 10 100 Although it is shown inthat the data driveris located adjacent to one lateral side of the substrate, the data drivermay be located on a printed circuit board electrically connected to a pad located on one side of the display panelin one or more other embodiments. The printed circuit board may be flexible, and a portion of the printed circuit board may be bent to be located below the backside of the substrate.

4 4 FIGS.A andB are schematic equivalent circuit diagrams of a light-emitting diode LED and a pixel circuit PC connected to the light-emitting diode LED according to one or more embodiments.

4 4 FIGS.A andB 3 FIG. Referring to, the pixel PX described with reference tomay emit light using a light-emitting diode LED, and the light-emitting diode LED may be electrically connected to a pixel circuit PC.

1 2 3 4 5 6 7 The pixel circuit PC may include a first thin-film transistor T, a second thin-film transistor T, a third thin-film transistor T, a fourth thin-film transistor T, a fifth thin-film transistor T, a sixth thin-film transistor T, a seventh thin-film transistor T, and a storage capacitor Cst.

1 2 3 4 5 6 1 2 3 4 5 6 7 1 2 3 4 5 6 7 3 4 1 2 3 4 5 6 7 5 4 FIG.B One or more of the first to seventh thin-film transistors T, T, T, T, T, T, and/or One or more of the first to seventh thin-film transistors T, T, T, T, T, T, and Tmay be N-channel metal oxide semiconductor (NMOS) field-effect transistors (N-channel MOSFETs), and one or more of the others may be P-channel metal oxide semiconductor (PMOS) field-effect transistors (P-channel MOSFETs). In one or more embodiments, among the first to seventh thin-film transistors T, T, T, T, T, T, and T, the third thin-film transistor Tand the fourth thin-film transistor Tmay be N-channel MOSFETs, and the rest may be P-channel MOSFETs. In one or more other embodiments, as shown in, among the first to seventh thin-film transistors T, T, T, T, T, T, and T, the fifth thin-film transistor Tmay be a P-channel MOSFET, and the rest may be N-channel MOSFETs.

1 2 3 4 5 6 7 1 2 3 4 5 6 7 3 4 1 2 5 6 7 5 1 2 3 4 6 7 4 FIG.A 4 FIG.B At least one of the first to seventh thin-film transistors T, T, T, T, T, T, or Tmay be a transistor having a low temperature polycrystalline silicon (LTPS) semiconductor layer, and at least one of the first to seventh thin-film transistors T, T, T, T, T, T, or Tmay be a transistor having an oxide semiconductor layer. In one or more embodiments, the third thin-film transistor Tand the fourth thin-film transistor Tshown inmay include an oxide semiconductor layer having a low leakage current, and the first, second, fifth, sixth, and seventh thin-film transistors T, T, T, T, and Tmay include a semiconductor layer including polycrystalline silicon. In one or more other embodiments, the fifth thin-film transistor Tshown inmay include a semiconductor layer including polycrystalline silicon, and the first, second, third, fourth, sixth, and seventh thin-film transistors T, T, T, T, T, and Tmay include an oxide semiconductor layer.

2 1 1 2 The second thin-film transistor Tis a data writing thin-film transistor, may be connected to the scan line SL and the data line DL, and may be configured to transfer a data voltage (or a data signal Dm) to the first thin-film transistor Tbased on a switching voltage (or a scan signal Sn), the data voltage being input from the data line DL, and the switching voltage being input from the scan line SL. The storage capacitor Cst may be connected to the first thin-film transistor Tand a driving voltage line PL, and may be configured to store a voltage corresponding to a difference between a data voltage transferred from the second thin-film transistor Tand a driving voltage ELVDD supplied to the driving voltage line PL.

1 The first thin-film transistor Tis a driving thin-film transistor, may be connected to the driving voltage line PL and the storage capacitor Cst, and may be configured to control a driving current according to the voltage stored in the storage capacitor Cst, the driving current flowing from the driving voltage line PL to the light-emitting diode LED. The light-emitting diode LED may be configured to emit light having a brightness (e.g., a preset brightness) corresponding to the driving current. A second electrode (e.g., a cathode) of the light-emitting diode LED may be configured to receive a common voltage ELVSS.

3 3 3 1 6 3 4 1 3 1 1 The third thin-film transistor Tis a compensation thin-film transistor, and a gate electrode of the third thin-film transistor Tmay be connected to the scan line SL. A source electrode (or drain electrode) of the third thin-film transistor Tmay be connected to a drain electrode (or source electrode) of the first thin-film transistor T, and may be connected to a first electrode of the light-emitting diode LED through the sixth thin-film transistor T. A drain electrode (or source electrode) of the third thin-film transistor Tmay be connected to one of electrodes of the storage capacitor Cst, a source electrode (or drain electrode) of the fourth thin-film transistor T, and a gate electrode of the first thin-film transistor T. The third thin-film transistor Tis turned on according to a scan signal Sn received through the scan line SL, and may diode-connect the first thin-film transistor Tby connecting the gate electrode and the drain electrode of the first thin-film transistor Tto each other.

4 4 4 4 3 1 4 1 1 The fourth thin-film transistor Tis an initialization thin-film transistor, and a gate electrode of the fourth thin-film transistor Tmay be connected to a previous scan line SL−1. A drain electrode (or source electrode) of the fourth thin-film transistor Tmay be connected to an initialization voltage line VL. A source electrode (or drain electrode) of the fourth thin-film transistor Tmay be connected to one of the electrodes of the storage capacitor Cst, a drain electrode (or source electrode) of the third thin-film transistor T, and the gate electrode of the first thin-film transistor T. The fourth thin-film transistor Tmay be turned on according to a previous scan signal Sn−1 received through the previous scan line SL−1, and may perform an initialization operation of initializing the voltage of the gate electrode of the first thin-film transistor Tby transferring an initialization voltage Vint to the gate electrode of the first thin-film transistor T.

5 5 5 5 1 2 The fifth thin-film transistor Tis an operation control thin-film transistor, and a gate electrode of the fifth thin-film transistor Tmay be connected to an emission control line EL. A source electrode (or drain electrode) of the fifth thin-film transistor Tmay be connected to the driving voltage line PL. A drain electrode (or source electrode) of the fifth thin-film transistor Tis connected to the source electrode (or drain electrode) of the first thin-film transistor Tand to a drain electrode (source electrode) of the second thin-film transistor T.

6 6 6 1 3 6 5 6 The sixth thin-film transistor Tis an emission control thin-film transistor, and a gate electrode of the sixth thin-film transistor Tmay be connected to the emission control line EL. A source electrode (or drain electrode) of the sixth thin-film transistor Tis connected to the drain electrode (or source electrode) of the first thin-film transistor Tand to a source electrode (drain electrode) of the third thin-film transistor T. A drain electrode (source electrode) of the sixth thin-film transistor Tmay be electrically connected to the first electrode of the light-emitting diode LED. The fifth thin-film transistor Tand the sixth thin-film transistor Tmay be concurrently or substantially simultaneously turned on according to an emission control signal En transferred through the emission control line EL, the driving voltage ELVDD is transferred to the light-emitting diode LED, and the driving current flows through the light-emitting diode LED.

7 7 7 7 7 The seventh thin-film transistor Tmay be an initialization thin-film transistor configured to initialize the first electrode of the light-emitting diode LED. A gate electrode of the seventh thin-film transistor Tmay be connected to a next scan line SL+1. A source electrode (drain electrode) of the seventh thin-film transistor Tmay be connected to the first electrode of the light-emitting diode LED. A drain electrode (or source electrode) of the seventh thin-film transistor Tmay be connected to the initialization voltage line VL. The seventh thin-film transistor Tmay be turned on according to a next scan signal Sn+1 transferred through the next scan line SL+1, and may initialize the first electrode of the light-emitting diode LED.

4 4 FIGS.A andB 4 7 4 7 Although it is shown inthat the fourth thin-film transistor Tand the seventh thin-film transistor Tare respectively connected to the previous scan line SL−1 and the next scan line SL+1, both the fourth thin-film transistor Tand the seventh thin-film transistor Tmay be connected to the previous scan line SL−1 and driven according to a previous scan signal Sn−1 in one or more other embodiments.

1 3 4 Another electrode of the storage capacitor Cst may be connected to the driving voltage line PL. One of the electrodes of the storage capacitor Cst may be connected to the gate electrode of the first thin-film transistor T, to the drain electrode (or source electrode) of the third thin-film transistor T, and to the source electrode (or drain electrode) of the fourth thin-film transistor T.

1 A second electrode (e.g., a cathode) of the light-emitting diode LED is configured to receive the common voltage ELVSS. The light-emitting diode LED is configured to emit light by receiving the driving current from the first thin-film transistor T.

5 FIG. 10 is a plan view of a portion of the display panelaccording to one or more embodiments.

5 FIG. 5 FIG. Referring to, the pixels PX may be located in the display area DA. The inner non-display area MA may be located between the opening area OA and the display area DA. The pixels PX adjacent to the opening area OA may be apart from each other around the opening area OA in a plan view. In a plan view, the pixels PX may be vertically apart from each other around the opening area OA, or horizontally apart from each other around the opening area OA. Because each pixel PX uses red, green, or blue light emitted from the light-emitting diode, the positions of the pixels PX shown inrespectively correspond to the positions of the light-emitting diodes. Accordingly, when the pixels PX are apart from each other around the opening area OA in a plan view, it may represent the light-emitting diodes are apart from each other around the opening area OA in a plan view. As an example, in a plan view, the light-emitting diodes may be vertically apart from each other around the opening area OA, or horizontally apart from each other around the opening area OA.

10 10 Among signal lines configured to supply signals to the pixel circuit connected to the light-emitting diode of each pixel PX, signal lines adjacent to the opening area OA may detour around the opening area OA and/or the openingOP. Some of the data lines DL passing across the display area DA may extend in ±y directions to provide data signals to pixels PX vertically located with the opening area OA therebetween, and may detour along the edge of the opening area OA and/or the openingOP in the inner non-display area MA.

1 1 1 1 2 2 2 A detour portion DL-Cof at least one data line DL among the data lines DL, and an extension portion DL-Lcrossing the display area DA, may be located on different layers, and the detour portion DL-Cof the data line DL may be connected to the extension portion DL-Lthrough a contact hole CNT. A detour portion DL-Cof at least one data line DL among the data lines DL may be located at the same layer as an extension portion DL-L, and may be integrally formed with the extension portion DL-L.

2100 2100 3 FIG. The scan line SL may be separated or disconnected around the opening area OA, the scan line SL located on the left around the opening area OA may receive signals from the scan driverlocated on the left around the display area DA, and the scan line SL located on the right around the opening area OA may receive signals from the scan driverlocated on the right around the display area DA, as described above with reference to.

Overhang structures OHS may be located between the opening area OA and a region of the inner non-display area MA in which the data lines DL detour. In a plan view, each of the overhang structures OHS may have a closed loop shape surrounding the opening area OA, and the overhang structures OHS may be apart from each other.

6 FIG. 5 FIG. 10 is a cross-sectional view of the display panelaccording to one or more embodiments, taken along the line VI-VI′ of.

6 FIG. 100 100 Referring to the display area DA of, the substratemay include glass or polymer resin. In one or more embodiments, the substratemay have a stack structure in which a base layer including polymer resin and a barrier layer including an inorganic insulating material, such as silicon oxide or silicon nitride are alternately stacked. The polymer resin may include polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose tri acetate, cellulose acetate propionate, and the like.

100 7 FIG. The pixel circuit PC may be formed over the substrate, and the light-emitting diode, for example, an organic light-emitting diode OLED may be located on the pixel circuit PC. The organic light-emitting diode OLED may be located on an inorganic insulating structure IL (see) described below.

201 100 201 A buffer layermay be formed on the substrate(e.g., before the pixel circuit PC is formed) to reduce or prevent impurities from penetrating to the pixel circuit PC. The buffer layermay include an inorganic insulating material, such as silicon nitride, silicon oxynitride, and/or silicon oxide, and may include a single-layered structure or a multi-layered structure including the above inorganic insulating materials.

4 4 FIG.A orB 6 FIG. 1 3 As described above with reference to, the pixel circuit PC may include the plurality of transistors and the storage capacitor. With regard to this,shows the first thin-film transistor T, the third thin-film transistor T, and the storage capacitor Cst.

1 1 201 1 1 1 1 1 1 1 1 1 1 1 1 1 1 The first thin-film transistor Tmay include a semiconductor layer (referred to as a first semiconductor layer A) on the buffer layer, and a gate electrode (referred to as a first gate electrode GE) overlapping a channel region Cof the first semiconductor layer A. The first semiconductor layer Amay include a silicon-based semiconductor material, for example, polycrystalline silicon. The first semiconductor layer Amay include the channel region C, and a first region Band a second region Drespectively located on two opposite sides of the channel region C. The first region Band the second region Dare regions including impurities of higher concentration than that of the channel region C. One of the first region Bor the second region Dmay correspond to a source region, and the other may correspond to a drain region.

203 1 1 203 A first gate-insulating layermay be located between the first semiconductor layer Aand the first gate electrode GE. The first gate-insulating layermay include an inorganic insulating material, such as silicon nitride, silicon oxynitride, and silicon oxide, and may include a single-layered structure or a multi-layered structure including the above inorganic insulating materials.

1 The first gate electrode GEmay include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), and/or titanium (Ti), and may have a single-layered structure or a multi-layered structure including the above materials.

1 2 1 1 1 1 1 1 The storage capacitor Cst may include a lower electrode CEand an upper electrode CEoverlapping each other. In one or more embodiments, the lower electrode CEof the storage capacitor Cst may include the first gate electrode GE. In other words, the first gate electrode GEmay include the lower electrode CEof the storage capacitor Cst. As an example, the first gate electrode GEand the lower electrode CEof the storage capacitor Cst may be integrally formed.

205 1 2 205 A first interlayer insulating layermay be located between the lower electrode CEand the upper electrode CEof the storage capacitor Cst. The first interlayer insulating layermay include an inorganic insulating material, such as silicon nitride, silicon oxynitride, and silicon oxide, and may include a single-layered structure or a multi-layered structure including the above inorganic insulating materials.

2 The upper electrode CEof the storage capacitor Cst may include a conductive material of a low-resistance material, such as molybdenum (Mo), aluminum (Al), copper (Cu) and/or titanium (Ti), and may have a single-layered structure or a multi-layered structure including the above materials.

207 207 A second interlayer insulating layermay be located on the storage capacitor Cst. The second interlayer insulating layermay include an inorganic insulating material, such as silicon nitride, silicon oxynitride, and/or silicon oxide, and may include a single-layered structure or a multi-layered structure including the above inorganic insulating materials.

3 3 207 3 3 3 A semiconductor layer (referred to as a third semiconductor layer A) of the third thin-film transistor Tmay be located on the second interlayer insulating layer. The third semiconductor layer Amay include an oxide-based semiconductor material. As an example, the third semiconductor layer Amay include Zn-oxide-based material, for example, include Zn-oxide, In-Zn oxide, and/or Ga—In—Zn oxide. In one or more embodiments, the third semiconductor layer Amay include In—Ga—Zn—O (IGZO), In—Sn—Zn—O (ITZO), or In—Ga—Sn—Zn—O (IGTZO) semiconductor-containing metal, such as indium (In), gallium (Ga), and/or stannum (Sn) in ZnO.

3 3 3 3 3 3 3 3 3 The third semiconductor layer Amay include a channel region C, and a first region Band a second region Drespectively located on two opposite sides of the channel region C. One of the first region Band the second region Dmay correspond to a source region, and the other of the first region Band the second region Dmay correspond to a drain region.

3 3 3 3 3 3 3 3 3 3 3 The third thin-film transistor Tmay include a gate electrode (referred to as a third gate electrode GE, hereinafter) overlapping the channel region Cof the third semiconductor layer A. The third gate electrode GEmay have a double-gate structure including a lower gate electrode GA and an upper gate electrode GB, wherein the lower gate electrode GA is below the third semiconductor layer A, and the upper gate electrode GB is over the channel region C.

3 205 2 3 2 The lower gate electrode GA may be located at the same layer (e.g., the first interlayer insulating layer) as the upper electrode CEof the storage capacitor Cst. The lower gate electrode GA may include the same material as the upper electrode CEof the storage capacitor Cst.

3 3 209 209 The upper gate electrode GB may be located over the third semiconductor layer Awith a second gate-insulating layertherebetween. The second gate-insulating layermay include an inorganic insulating material, such as silicon nitride, silicon oxynitride, and/or silicon oxide, and may include a single-layered structure or a multi-layered structure including the above inorganic insulating materials.

210 3 210 A third interlayer insulating layermay be located on the upper gate electrode GB. The third interlayer insulating layermay include an inorganic insulating material, such as silicon oxynitride, and may have a single layer or a multi-layer including the inorganic insulating materials.

6 FIG. 4 FIG.A 4 FIG.A 6 FIG. 4 FIG.A 4 FIG.A 1 3 1 3 2 5 6 7 1 2 5 6 7 201 1 1 203 1 1 2 5 6 7 1 shows the first thin-film transistor Tand the third thin-film transistor Tdescribed with reference to, and shows that the first semiconductor layer Aand the third semiconductor layer Aare located on different layers. In one or more embodiments, the second, fifth, sixth, and seventh thin-film transistors T, T, T, and T(see) may have the same structure as that of the first thin-film transistor Tdescribed with reference to. As an example, the second, fifth, sixth, and seventh thin-film transistors T, T, T, and T(see) may include a semiconductor layer located at the same layer (e.g., the buffer layer) as the first semiconductor layer Aof the first thin-film transistor T, and a gate electrode located at the same layer (e.g., the first gate-insulating layer) as the first gate electrode GEof the first thin-film transistor T. A semiconductor layer of the second, fifth, sixth, and seventh thin-film transistors T, T, T, and T(see) may be integrally connected to the first semiconductor layer A.

6 FIG. 4 FIG.B 4 FIG.B 1 3 1 3 1 3 207 5 201 1 1 3 3 Although it is shown inthat the first semiconductor layer Aand the third semiconductor layer Aare located on different layers, the disclosure is not limited thereto. In one or more other embodiments, in the case where the first thin-film transistor Tand the third thin-film transistor Tare the same NMOS transistors as in, the first semiconductor layer Amay be located at the same layer as the third semiconductor layer A, that is, on the second interlayer insulating layer. Further, a semiconductor layer of the fifth thin-film transistor Tofmay be a semiconductor layer including polycrystalline silicon, and may be located on the buffer layer. Hereinafter, for convenience of description, a case where the first semiconductor layer Aof the first thin-film transistor Tincludes polycrystalline silicon, and the third semiconductor layer Aof the third thin-film transistor Tincludes an oxide semiconductor is described.

1 3 166 166 210 166 1 1 166 3 3 The first thin-film transistor Tmay be electrically connected to the third thin-film transistor Tthrough a node connection line. The node connection linemay be located on the third interlayer insulating layer. One side of the node connection linemay be connected to the first gate electrode GEof the first thin-film transistor T, and another side of the node connection linemay be connected to the third semiconductor layer Aof the third thin-film transistor T.

166 166 The node connection linemay include aluminum (Al), copper (Cu), and/or titanium (Ti), and may include a single layer or a multi-layer including the above materials. As an example, the node connection linemay have a triple-layered structure of titanium layer/aluminum layer/titanium layer.

211 166 211 A first organic insulating layermay be located on the node connection line. The first organic insulating layermay include an organic insulating material. The organic insulating material may include acryl, benzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO).

211 213 The data line DL and the driving voltage line PL may be located on the first organic insulating layer, and may be covered by a second organic insulating layer. The data line DL and the driving voltage line PL may include aluminum (Al), copper (Cu), and/or titanium (Ti), and may include a single layer or a multi-layer including the above materials. As an example, the data line DL and the driving voltage line PL may each have a triple-layered structure of titanium layer/aluminum layer/titanium layer.

213 211 166 6 FIG. The second organic insulating layermay include acryl, BCB, polyimide, and/or HMDSO. Although it is shown inthat the data line DL and the driving voltage line PL are formed on the first organic insulating layer, the disclosure is not limited thereto. In one or more other embodiments, one of the data line DL and the driving voltage line PL may be located at the same layer as the node connection line.

213 A light-emitting diode, for example, the organic light-emitting diode OLED may be located on the second organic insulating layer.

221 221 221 2 3 A pixel electrodeof the organic light-emitting diode OLED may include a reflective layer including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chrome (Cr), or a compound thereof. In one or more other embodiments, the pixel electrodemay further include a conductive oxide material layer on and/or under the reflective layer. The conductive oxide material layer may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (InO), indium gallium oxide (IGO), and/or aluminum zinc oxide (AZO). In one or more embodiments, the pixel electrodemay have a triple-layered structure of ITO layer/Ag layer/ITO layer.

215 221 215 221 221 215 A bank layermay be located on the pixel electrode. The bank layermay include, or define, an opening that overlaps the pixel electrode, and may cover the edges of the pixel electrode. The bank layermay include an organic insulating material.

222 222 222 222 222 222 222 222 222 222 222 222 222 222 b a c a b c b b a c a c An intermediate layerincludes an emission layer. The intermediate layermay include a first functional layerand/or a second functional layer, wherein the first functional layeris under the emission layer, and the second functional layeris on the emission layer. The emission layermay include a polymer organic material or a low-molecular weight organic material configured to emit light having a corresponding color (e.g., preset color). The first functional layermay include a hole transport layer (HTL) and/or a hole injection layer (HIL). The second functional layermay include an electron transport layer (ETL) and/or an electron injection layer (EIL). The first functional layerand the second functional layermay each include an organic material.

223 223 223 2 3 An opposite electrodemay include a conductive material having a low work function. As an example, the opposite electrodemay include a (semi) transparent layer including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chrome (Cr), or an alloy thereof. Alternatively, the opposite electrodemay further include a layer on the (semi) transparent layer, the layer including ITO, IZO, ZnO, or InO.

222 221 215 222 222 223 b a c The emission layermay be formed in the display area DA to overlap the pixel electrodethrough the opening of the bank layer. In contrast, the first functional layer, the second functional layer, and the opposite electrodemay extend to be located in not only the display area DA, but also in the inner non-display area MA.

217 215 217 215 217 A spacermay be formed on the bank layer. The spacermay be formed together during the same process as the forming the bank layer, or may be formed separately during a separate process. In one or more embodiments, the spacermay include an organic insulating material, such as polyimide.

300 300 300 310 330 320 6 FIG. The organic light-emitting diode OLED may be covered by an encapsulation layer. The encapsulation layermay include at least one organic encapsulation layer and at least one inorganic encapsulation layer. In one or more embodiments, it is shown inthat the encapsulation layerincludes first and second inorganic encapsulation layersand, and an organic encapsulation layertherebetween.

310 330 310 330 320 320 The first and second inorganic encapsulation layersandmay include at least one inorganic material selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, silicon oxynitride, or the like. The first and second inorganic encapsulation layersandmay include a single layer or a multi-layer including the above materials. The organic encapsulation layermay include a polymer-based material. The polymer-based material may include an acryl-based resin, an epoxy-based resin, polyimide, and polyethylene. In one or more embodiments, the organic encapsulation layermay include acrylate.

310 330 310 330 330 310 310 330 The thickness of the first inorganic encapsulation layermay be different from that of the second inorganic encapsulation layer. The thickness of the first inorganic encapsulation layermay be greater than that of the second inorganic encapsulation layer. Alternatively, the thickness of the second inorganic encapsulation layermay be greater than that of the first inorganic encapsulation layer, or the thickness of the first inorganic encapsulation layermay be the same as that of the second inorganic encapsulation layer.

10 100 20 20 200 100 300 40 50 20 2 FIG. 2 FIG. 2 FIG. The display panelmay include the substrateand the image-generating layer, and the image-generating layermay include a circuit-diode layerlocated on the substrateand including pixel circuits PC and light-emitting diodes and the encapsulation layer. As described above with reference to, the input-sensing layer(see), the optical functional layer(see), and the like may be further located on the image-generating layer.

6 FIG. 5 FIG. 1 2 Referring to the inner non-display area MA of, the inner non-display area MA may include a line bypass area WBA through which the detour portions DL-Cand DL-Cof the data lines DL described above with reference topass.

1 2 1 2 210 211 The detour portions DL-Cand DL-Cof the data lines DL may be located on different layers. One of the detour portions DL-Cand DL-Cof adjacent data lines DL may be located on the third interlayer insulating layer, and the other may be located on the first organic insulating layer.

1 2 211 1 2 In the case where the detour portions DL-Cand DL-Cof the data lines DL are alternately located with an insulating layer (e.g., a first organic insulating layer) therebetween, a pitch Δd between the detour portions DL-Cand DL-Cof the data lines DL may be reduced, and thus, an area in the inner non-display area MA may be efficiently utilized.

7 FIG. 5 FIG. 5 7 FIGS.and 7 FIG. 7 FIG. 10 10 10 10 10 10 100 100 310 330 310 330 201 203 205 207 209 210 is a cross-sectional view of the display panelaccording to one or more embodiments, taken along the line VII-VII′ of. Referring to, the display panelmay include/define the openingOP corresponding to the opening area OA, and the inner non-display area MA may include structures for reducing or preventing propagation of cracks and/or moisture transmission. The openingOP of the display panelmay be formed by passing through the various layers configuring the display panel. With regard to this,shows an openingOP passing through a first surface (referred to as an upper surface, hereinafter) and a second surface (referred to as a lower surface, hereinafter) of the substrate, an opening IL-OP passing through an upper surface and a lower surface of an inorganic insulating structure IL, and openingsOP andOP of the first and second inorganic encapsulation layersand. The inorganic insulating structure IL is a stack structure including a plurality of inorganic insulating layers. In one or more embodiments, as shown in, the inorganic insulating structure IL may include the buffer layer, the first gate-insulating layer, the first interlayer insulating layer, the second interlayer insulating layer, the second gate-insulating layer, and the third interlayer insulating layer.

7 FIG. 2 FIG. 100 300 10 40 50 60 300 40 50 Althoughshows, for convenience of description, a stack structure from the substrateto the encapsulation layer, as described above with reference to, the display panelmay further include the input-sensing layer, the optical functional layer, the cover window, and the like on the encapsulation layer, and the input-sensing layerand the optical functional layermay respectively include openings corresponding to the opening area OA.

5 7 FIGS.and 510 520 530 300 510 520 Referring to, a trench TCH, overhang structures OHS, and first to third partition walls,, andmay be located in the inner non-display area MA. The encapsulation layermay extend to the inner non-display area MA, and may overlap or cover the trench TCH, the overhang structures OHS, the first and second partition wallsand, and the like.

5 7 FIGS.and 5 FIG. 7 FIG. 510 510 520 520 530 520 530 520 530 The overhang structures OHS may be apart from each other in the inner non-display area MA. In one or more embodiments, referring to, one overhang structure OHS may be located between the first partition walland the display area DA (see), a plurality of overhang structures OHS may be located between the first partition walland the second partition wall, and at least one overhang structure OHS may be located between the second partition walland the third partition wall. Althoughshows one overhang structure OHS between the second partition walland the third partition wall, the disclosure is not limited thereto. In one or more other embodiments, a plurality of overhang structures OHS may be located between the second partition walland the third partition wall.

5 FIG. 100 100 100 100 As shown in, each of the overhang structures OHS may have a closed loop shape surrounding the opening area OA in a plan view. In a plan view, when “A” has a closed loop shape surrounding the opening area OA, it may represent that “A” has a closed loop shape surrounding the openingOP of the substratein a plan view. Accordingly, when each of the overhang structures OHS may have a closed loop shape surrounding the opening area OA in a plan view, it may represent that each of the overhang structures OHS may have a closed loop shape surrounding the openingOP of the substratein a plan view.

1000 1100 1200 1200 1100 1100 1100 1100 7 FIG. The overhang structure OHS may be defined in a multi-layerincluding a first layerand a second layerrespectively including different materials. The second layermay be located on the first layer, and may have a thickness that is less than that of the first layer. The overhang structure OHS may include, or define, a groove G defined in the first layer, and an overhang portion P hanging over the groove G to have an eave structure. In one or more embodiments, as shown in, the overhang structure OHS may include the groove G defined in the first layer, and two overhang portions P protruding toward each other over the groove G.

1100 1100 1100 211 1100 1100 6 FIG. The first layermay include an insulating material. In one or more embodiments, the first layermay include an organic insulating material. As an example, a material of the first layermay be the same as a material of the first organic insulating layerdescribed with reference to. The groove G is a portion recessed in a thickness direction of the first layer, and a depth of the groove G may be less than the thickness of the first layer.

1100 1100 100 100 The first layermay be apart from each other in the inner non-display area MA. Like the overhang structure OHS, the first layermay have a closed loop shape surrounding the opening area OA and/or the openingOP of the substrate.

1200 1200 1200 1200 1200 6 FIG. The second layermay include a conductive material. In one or more embodiments, the second layermay be a metal layer including a metal material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and/or the like. The second layermay include a single-layered or multi-layered structure including the above materials. In one or more embodiments, the second layermay have a three-layered stack structure of a titanium layer/an aluminum layer/a titanium layer. As an example, the second layermay be formed during the same process as the forming the data line DL and/or the driving voltage line PL described with reference to, and may include the same material as the data line DL and/or the driving voltage line PL.

1200 1200 Two second layersmay be respectively located on two opposite sides of the groove G. Overhang portions P of the two second layersmay protrude toward each other over the groove G to have an eave shape. As an example, the two overhang portions P located on two opposite sides of the groove G may extend toward each other while maintaining a gap.

1200 1100 1200 1100 1200 1100 1100 1200 1100 1100 A second layerlocated on one first layermay be integrally connected to a second layerlocated on another first layerlocated adjacent thereto. In other words, one second layermay include two overhang portions P respectively extending over two adjacent first layers, and extending over the groove G of each of the two first layers. The second layermay be in contact with the upper surface of an uppermost layer (e.g., an inorganic insulating layer located directly under the first layer) of the inorganic insulating structure IL exposed between two adjacent first layers.

1115 1115 1115 1115 1115 221 1115 1115 1116 1116 1115 1100 6 FIG. A protective layermay be located on the overhang portion P, and may protect the overhang portion P. The protective layermay be located on the upper surface and on the lateral surface of the overhang portion P. For example, protective layermay be in direct contact with the upper surface and the lateral surface of the overhang portion P. The protective layermay include a conductive material. In one or more embodiments, the protective layermay include the same material as that of the pixel electrodedescribed with reference to. The protective layermay have a triple-layered structure of ITO layer/Ag layer/ITO layer. During the process of forming the protective layer, there may be a first material layer(referred to as a first protective material layer, hereinafter), which is the same as the protective layer, at a bottom of the groove G (e.g., on a surface of a corresponding first layerat a bottom of, or below, the groove G).

6 FIG. 6 FIG. 222 222 222 222 10 10 a c a c Among the layers included in the organic light-emitting diode OLED (see), a layer including an organic material, for example, the first functional layerand/or the second functional layer, may be formed in not only the display area DA, but also the inner non-display area MA. As a comparative example, the first functional layerand the second functional layercontinuously formed in the inner non-display area MA may provide a moisture transmission path of moisture introduced through the openingOP of the display panel, and the organic light-emitting diode OLED (see) may be damaged by the moisture.

222 222 223 222 222 223 222 222 223 1116 a c a c a c 6 FIG. 7 FIG. In contrast, in embodiments, among the layers included in the light-emitting diode, the first functional layerand/or the second functional layerincluding an organic material is separated into a plurality of portions by the overhang structure OHS in the inner non-display area MA. Accordingly, because a progression path of moisture introduced through the opening area OA is blocked, damage to the organic light-emitting diode OLED (see) may be reduced or prevented. Similarly, the opposite electrodemay be separated into a plurality of portions by the overhang structure OHS in the inner non-display area MA. With regard to this,shows each of the first functional layer, the second functional layer, and the opposite electrodeis separated into a plurality of portions in the inner non-display area MA. Each of the first functional layer, the second functional layer, and the opposite electrodemay be separated into a portion located on the overhang portion P, and a portion at a bottom of the groove G (e.g., on the first material layerat the bottom of, or below, the groove G).

10 10 10 10 The inner non-display area MA may include a trench area TRA relatively closer to the opening area OA. The trench area TRA is a region in which the trench TCH defined in the inorganic insulating structure IL is located, and the trench TCH may have a shape recessed in the thickness direction of the inorganic insulating structure IL. Because the display panelincludes the trench TCH defined in the inorganic insulating structure IL, impacts (e.g., impacts and the like that occur during a process of forming the openingOP of the display panel) that may occur during the process of manufacturing the display panel, and cracks according to the impacts, may be reduced or may be prevented from being transferred to the display area DA.

7 FIG. 7 FIG. 530 1100 210 209 207 The trench TCH may be located between the opening area OA and a partition wall located closest to the opening area OA among the partition walls. With regard to this,shows the trench TCH is located between the third partition walland the opening area OA. The width of the trench TCH may be greater than the width of the groove G of the first layer. The depth of the trench TCH may be less than a sum of thicknesses of the inorganic insulating structure IL. In one or more embodiments, although it is shown inthat the trench TCH passes through the upper surface and lower surface of the third interlayer insulating layer, the upper surface and lower surface of the second gate-insulating layer, and the upper surface of the second interlayer insulating layer, the disclosure is not limited thereto.

The trench TCH is a concave portion forming a step difference with respect to the upper surface of the inorganic insulating structure IL. Two opposite sides of the trench TCH may form a step difference with respect to the upper surface of the inorganic insulating structure IL. The trench TCH may include a first edge portion relatively closer to the opening area OA, and a second edge portion that is opposite to the first edge portion. Each of the first edge portion and the second edge portion may form a step difference with respect to the upper surface of the inorganic insulating structure IL.

110 110 An insulating layermay cover the step difference. As an example, the insulating layermay cover a step difference (e.g., a step difference between the second edge portion of the trench TCH and the upper surface of the inorganic insulating structure IL) located relatively away from the opening area OA.

110 110 1100 1100 110 The insulating layermay include an organic insulating material. In one or more embodiments, the insulating layermay be formed concurrently or substantially simultaneously during a process of forming the first layer, and may include the same material as the first layer. A portion of the insulating layermay be located on the upper surface of the inorganic insulating structure IL, and another portion may be located on the trench TCH.

120 110 120 1200 1200 120 120 110 222 222 223 120 222 222 223 120 a c a c 7 FIG. A metal layermay be located on the insulating layer. The metal layermay be formed concurrently or substantially simultaneously during a process of forming the second layer, and may include the same material as the second layer. The metal layermay include a first overhang portionP that protrudes further toward the trench TCH than the lateral surface of the insulating layer. Similar to the overhang portion P of the overhang structure OHS described above, each of the first functional layer, the second functional layer, and the opposite electrodemay be separated into a plurality of portions by the first overhang portionP. With regard to this, it is shown inthat each of the first functional layer, the second functional layer, and the opposite electrodeincludes a portion located on the first overhang portionP and a portion located at the bottom of the trench TCH.

7 FIG. 120 1200 530 1200 120 120 1200 In one or more embodiments, as shown in, the metal layermay be integrally connected to the second layerof the overhang structure OHS adjacent thereto, and the third partition wallmay be located on a connection portion of the second layeradjacent to the metal layer. In one or more other embodiments, the metal layermay be separated from the second layerof the overhang structure OHS adjacent thereto.

120 120 1115 1115 120 1115 1117 1117 1115 The first overhang portionP of the metal layermay be protected by the protective layer. The protective layermay be located on the upper surface and on the lateral surface of the first overhang portionP. During the process of forming the protective layer, there may be a second material layer(referred to as a second protective material layer, hereinafter), which is the same as the protective layer, at a bottom of the trench TCH.

300 310 330 510 520 530 310 330 310 1100 120 5 FIG. The encapsulation layermay extend to not only the display area DA (see), but also to the inner non-display area MA. Each of the first inorganic encapsulation layerand the second inorganic encapsulation layermay be located on, or in, the trench TCH, on the overhang structure OHS, on the first partition wall, on the second partition wall, and on the third partition wall. Each of the first inorganic encapsulation layerand the second inorganic encapsulation layermay extend toward the opening area OA through the trench area TRA. The first inorganic encapsulation layermay continuously cover the upper surface, the lateral surface, and the bottom surface of the overhang portion P, and an inner surface of the first layerdefining the groove G, and may continuously cover the upper surface, the lateral surface, and the bottom surface of the first overhang portionP.

320 320 320 510 5 FIG. 7 FIG. 5 FIG. A partition wall is intended to control a flow of monomer when forming the organic encapsulation layer. The organic encapsulation layermay overlap some of the overhang structures OHS, for example, an overhang structure OHS between one of the partition walls and the display area DA (see). In one or more embodiments, it is shown inthat the organic encapsulation layeroverlaps an overhang structure OHS between the first partition walland the display area DA (see).

510 310 320 330 5 FIG. The overhang structure OHS between the first partition walland the display area DA (see) may overlap the first inorganic encapsulation layer, the organic encapsulation layer, and the second inorganic encapsulation layer.

330 310 330 310 510 330 310 510 520 520 530 120 530 330 310 510 520 530 7 FIG. The second inorganic encapsulation layermay be in direct contact with the first inorganic encapsulation layerin a partial region of the inner non-display area MA. As an example, the second inorganic encapsulation layermay be in direct contact with the first inorganic encapsulation layerbetween the first partition walland the opening area OA. In one or more embodiments, as shown in, a portion of the second inorganic encapsulation layermay be in direct contact with a portion of the first inorganic encapsulation layerover the overhang structures OHS between the first partition walland the second partition wall, over the overhang structure OHS between the second partition walland the third partition wall, and over the first overhang portionP and the trench TCH between the third partition walland the opening area OA. A portion of the second inorganic encapsulation layermay be in direct contact with a portion of the first inorganic encapsulation layeron the first to third partition walls,, and.

510 520 510 1200 510 1115 1200 520 1200 520 1115 1200 510 520 530 510 520 520 530 Each of the first and second partition wallsandmay be located between adjacent overhang structures OHS. The first partition wallmay cover an end of each of the second layerslocated on two opposite sides of the first partition walland extending to the upper surface of the inorganic insulating structures IL, and may cover an end of the protective layerlocated on the second layers. The second partition wallmay cover an end of each of the second layerslocated on two opposite sides of the second partition walland extending to the upper surface of the inorganic insulating structures IL, and may cover an end of the protective layerlocated on the second layers. Each of the first to third partition walls,, andmay have a closed loop shape surrounding the opening area OA in a plan view. In one or more embodiments, the width of the first partition wallmay be greater than the width of the second partition wall. The width of the second partition wallmay be greater than the width of the third partition wall.

8 FIG. 7 FIG. 9 FIG. 7 FIG. 8 9 FIGS.and 7 FIG. 7 FIG. 8 9 FIGS.and 7 FIG. 10 10 510 520 520 530 is an excerpted cross-sectional view of a portion of the display panelaccording to one or more embodiments, and is an enlarged view of a region VIII of.is an excerpted cross-sectional view of a portion of the display panelaccording to one or more other embodiments, corresponding to an enlarged view of a region VIII of. Although the overhang structure OHS shown inshows the overhang structure OHS located between adjacent partition walls, for example, between the first partition wall(see) and the second partition wall(see), the disclosure is not limited thereto. A structure of the overhang structure OHS shown inmay be the same as that of the overhang structure OHS located between the second partition walland the third partition wall(see).

8 9 FIGS.and 1000 1000 1100 1200 1100 1200 1100 1200 Referring to, the overhang structure OHS may be located on the inorganic insulating structure IL. The overhang structure OHS may be defined in the multi-layer, and the multi-layermay include different materials, and may include the first layerand the second layerrespectively having different thicknesses. The first layermay include an insulating material, and the second layermay include a conductive material. In one or more embodiments, the first layermay include an organic insulating material, may include acryl, BCB, polyimide, or HMDSO, and may include a single layer or a multi-layer including the above materials. The second layermay include aluminum (Al), copper (Cu), and/or titanium (Ti), and may include a single layer or a multi-layer including the above materials.

1100 210 1100 1100 1100 1100 1100 1100 210 1100 1100 210 1100 1100 1100 b i s u b i s u s i. The first layermay be located on an uppermost layer of the inorganic insulating structure IL, for example, the third interlayer insulating layer. The first layermay include a lower surface, an inner surface, a side surface, and an upper surface. The lower surfaceis in contact with the upper surface of the third interlayer insulating layer, the inner surfacedefines the groove G (e.g., a portion of the groove G), the side surfaceis tapered in a forward direction with respect to the upper surface of the third interlayer insulating layer, and the upper surfaceis between the side surfaceand the inner surface

1100 1100 1 1100 1100 1100 2 1100 1100 1200 1100 3 2 u s u i The upper surfaceof the first layermay be inclined downwardly from the outside toward the inside where the groove G is located. Accordingly, a first vertical distance H, which is from the upper surface of the inorganic insulating structure IL to a point where the side surfaceof the first layermeets the upper surface, may be greater than a second vertical distance Hfrom the upper surface of the inorganic insulating structure IL to a point where the inner surfaceof the first layermeets the bottom surface of the second layer. Because the depth of the groove G is less than the thickness of the first layer, a third vertical distance Hfrom the upper surface of the inorganic insulating structure IL to a portion corresponding to the center of the groove G is less than the second vertical distance H.

1200 1100 1200 Two second layersmay be respectively located on two opposite sides with the groove G of the first layertherebetween. Each of the second layersrespectively located on two opposite sides with the groove G therebetween may include the overhang portion P protruding over the groove G.

1200 1200 1100 1100 1200 1200 1100 1100 1200 1100 1100 i i i The second layerlocated on one side (e.g., the left side) of the groove G may include the overhang portion P extending (or protruding) toward the groove G from a point where the lower surface of the second layermeets the inner surfaceof the first layerdefining the groove G. Similarly, the second layerlocated on the other side (e.g., the right side) of the groove G may include the overhang portion P extending (or protruding) toward the groove G from a point where the lower surface of the second layermeets the inner surfaceof the first layerdefining the groove G. A length L of the overhang portion P, for example, the length L from a portion where the lower surface of the second layermeets the inner surfaceof the first layerdefining the groove G to the edge (lateral surface) of the overhang portion P may in a range of about 0.2 micrometers to about 0.4 micrometers (e.g., 0.2 μm≤L≤0.4 μm).

1200 1100 1100 1200 1100 1100 s s Each of the two second layersmay extend to the upper surface of the inorganic insulating structure IL through the two opposite side surfacesof the first layer. Each of the second layersmay be in direct contact with the side surfacesof the first layerand the upper surface of the inorganic insulating structure IL.

100 100 100 100 u u An upper surface Pu of the overhang portion P may be located on an imaginary plane IPL parallel to an upper surfaceof the substrate, or may be located on a plane different from the imaginary plane IPL. A first angle θ between the upper surface Pu of the overhang portion P and the imaginary plane IPL parallel to the upper surfaceof the substratemay have a range of about 0° to about 40° (e.g., 0°≤θ≤40°).

1200 100 100 u 8 FIG. In one or more embodiments, the overhang portion P of each of the second layersmay be tilted downwardly toward the groove G. As an example, a first angle θ between the upper surface Pu of the overhang portion P and the imaginary plane IPL parallel to the upper surfaceof the substratemay be greater than about 0° and may be equal to or less than about 40° (e.g., 0°<θ≤40°). As an example, as shown in, the first angle θ may be greater than about 0° and may be equal to or less than about 30° (0°<θ≤30°).

9 FIG. 100 100 u In one or more other embodiments, the first angle θ may be about 0°. As an example, as shown in, the upper surface Pu of the overhang portion P may be located on the imaginary plane IPL parallel to the upper surfaceof the substrate.

1100 1100 310 330 As described above, in the case where the first angle θ has the range of about 0° to about 40° (0°<θ≤40°), the likelihood of the overhang portion P being lifted from the first layerand separated from the first layermay be effectively reduced or prevented. Because the likelihood of the phenomenon of the overhang portion P being lifted is reduced or prevented, exfoliation of the first inorganic encapsulation layerand the second inorganic encapsulation layermay be reduced or prevented.

1115 1200 1115 1115 1115 1100 1100 1115 10 s 7 FIG. The protective layermay be located on the second layer. The protective layeris located on the overhang portion P, and may be in direct contact with the overhang portion P. The protective layermay be located on the upper surface Pu and a lateral surface Ps of the overhang portion P. The protective layermay extend to overlap the side surfaceof the first layerand to overlap the upper surface of the inorganic insulating structure IL. The protective layermay reduce or prevent the likelihood of the length of the overhang portion P (e.g., eaves length) being shortened due to damage to the overhang portion P during the process of manufacturing the display panel(see).

1115 221 1115 1115 1116 1115 6 FIG. 8 9 FIGS.and The protective layermay include a conductive material, for example, the same material as the pixel electrode(see). The protective layermay be formed through a deposition process. A material forming the protective layermay be deposited inside the groove G, and as shown in, there may be the first protective material layer, which is the same as the protective layer, at a bottom of the groove G.

7 FIG. 6 FIG. 8 9 FIGS.and 222 222 222 222 222 222 1115 222 222 1116 a c a c a c a c As described above with reference to, the organic material layers included in the organic light-emitting diode OLED (see), for example, the first functional layerand the second functional layer, may be separated into a plurality of portions by the overhang structure OHS. As shown in, each of the first functional layerand the second functional layermay include portions located on the overhang portions P and a portion located inside the groove G. A portion of the first functional layerand the second functional layermay be located on the protective layerover the overhang portion P, and another portion of the first functional layerand the second functional layermay be located on the first protective material layerat a bottom of the groove G.

223 223 223 222 222 223 222 222 8 9 FIGS.and a c a c Similarly, the opposite electrodemay be separated into a plurality of portions. As shown in, the opposite electrodemay include portions located on the overhang portions P, and a portion located inside the groove G. A portion of the opposite electrodemay be located on a portion of each of the first functional layerand the second functional layer, and another portion of the opposite electrodemay be located on another portion of each of the first functional layerand the second functional layerat a bottom of the groove G.

310 310 310 310 310 8 9 FIGS.and 8 FIG. 9 FIG. Because the first inorganic encapsulation layerhas suitable step coverage, the first inorganic encapsulation layermay continuously extend without being disconnected by the overhang structure OHS as shown in. As an example, the first inorganic encapsulation layermay continuously extend to overlap the upper surface Pu, the lateral surface Ps, and a bottom surface Pb of the overhang portion P. In one or more embodiments, the upper surfaces of the first inorganic encapsulation layermay be in contact with each other between the adjacent overhang portions P. In this case, in a cross-sectional view, there may be a cavity CV as shown in. In one or more other embodiments, as shown in, the cavity CV may be omitted according to the thickness of the first inorganic encapsulation layerand/or the gap between the overhang portions P.

330 330 330 310 8 9 FIGS.and 7 FIG. Because the second inorganic encapsulation layerhas suitable step coverage, the second inorganic encapsulation layermay continuously extend without being separated by the overhang structure OHS. As shown in, the second inorganic encapsulation layermay be in direct contact with the first inorganic encapsulation layeron some overhang structure OHS among the overhang structures OHS shown in.

10 FIG.A 8 FIG. 10 FIG.B 10 FIG.A 10 10 is an excerpted cross-sectional view of a portion of the display panelaccording to one or more embodiments, and is an enlarged view of a region XA of, andis an excerpted cross-sectional view of a portion of the display panelaccording to one or more other embodiments, corresponding to a modified one or more embodiments corresponding to.

10 10 FIGS.A andB 1200 1201 1202 1203 1201 1200 1202 1203 Referring to, the second layermay include a plurality of sub-layers,, andincluding different respective materials. As an example, the first sub-layerof the second layermay be a titanium layer, the second sub-layermay be an aluminum layer, and the third sub-layermay be a titanium layer.

10 FIG.A 1115 1200 1201 1202 1203 In one or more embodiments, referring to, the protective layermay continuously extend from the upper surface Pu of the overhang portion P to the lateral surface Ps to cover the lateral surface Ps of the overhang portion P of the second layer, for example, the lateral surface of each of the first to third sub-layers,, and.

1201 1202 1203 1200 1115 1200 10 FIG.B In one or more other embodiments, because etching selectivities of the first to third sub-layers,, andare different from each other, the lateral surface Ps of the overhang portion P may have irregularities during the process of forming the second layer, as shown in. Due to the irregularities, a portion of the protective layerformed on the second layerlocated on the upper surface Pu of the overhang portion P, and a portion located on the lateral surface Ps of the overhang portion P may be discontinuous.

11 FIG. 7 FIG. 11 FIG. 5 FIG. 7 FIG. 10 510 is an excerpted cross-sectional view of a portion of the display panelaccording to one or more embodiments and is an enlarged view of a region XI of. The overhang structure OHS shown inshows an overhang structure OHS located between the display area DA (see) and the first partition wall(see) that is closest to the display area DA.

11 FIG. 5 FIG. 7 FIG. 8 FIG. 510 1100 Referring to, the overhang structure OHS located between the display area DA (see) and the first partition wall(see) may also have the same structure described above with reference to. The overhang structure OHS may include overhang portions P protruding over the groove G of the first layer.

1100 1100 1 1100 1100 1100 2 1100 1100 1200 1100 3 2 u s u i In one or more embodiments, the upper surfaceof the first layermay be inclined downwardly toward the groove G. Accordingly, the first vertical distance Hfrom the upper surface of the inorganic insulating structure IL to a point where the side surfaceof the first layermeets the upper surfacemay be greater than the second vertical distance Hfrom the upper surface of the inorganic insulating structure IL to a point where the inner surfaceof the first layermeets the bottom surface of the second layer. Because the depth of the groove G is less than the thickness of the first layer, the third vertical distance Hfrom the upper surface of the inorganic insulating structure IL to a portion corresponding to the center of the groove G is less than the second vertical distance H.

1200 1100 100 100 u 8 9 FIGS.and The first angle θ between the upper surface Pu of the overhang portion P of the second layerlocated on the first layerand the imaginary plane IPL parallel to the upper surfaceof the substratemay have the range of about 0° to about 40° (e.g., 0°≤θ≤40°) as described above with reference to. In one or more embodiments, the first angle θ between the imaginary plane IPL and the upper surface Pu of each of the overhang portions P may be e.g., 0°≤θ≤30°.

1200 1100 1200 1200 1100 1100 i Two second layersmay be respectively located on two opposite sides with the groove G of the first layertherebetween. Each of the second layersmay include the overhang portion P extending (or protruding) toward the groove G from a point where the lower surface of the second layermeets the inner surfaceof the first layerdefining the groove G. The length of the overhang portion P may have a range of about 0.2 micrometers to about 0.4 micrometers.

1115 1115 1115 1100 1100 1116 1115 s The protective layeris located on the overhang portion P, and may be in direct contact with the overhang portion P. The protective layermay be located on the upper surface Pu and a lateral surface Ps of the overhang portion P. The protective layermay extend to overlap the side surfaceof the first layerand the upper surface of the inorganic insulating structure IL. The first protective material layermay include the same material as the protective layer, and may be present at the bottom of the groove G.

7 FIG. 6 FIG. 11 FIG. 222 222 222 222 223 a c a c As described above with reference to, the organic material layers included in the organic light-emitting diode OLED (see), for example, the first functional layerand the second functional layer, may be separated into a plurality of portions by the overhang structure OHS. As shown in, each of the first functional layerand the second functional layermay include portions located on the overhang portions P and a portion located inside the groove G. Similarly, the opposite electrodemay be separated into a plurality of portions.

1115 222 222 223 a c 10 FIG.A 10 FIG.B The protective layer, the first functional layer, the second functional layer, and the opposite electrodeon the overhang portion P are located on the upper surface Pu and the lateral surface Ps of the overhang portion P, and may be continuous as described above with reference toor discontinuous as described with reference to.

310 310 320 310 11 FIG. 11 FIG. Because the first inorganic encapsulation layerhas suitable step coverage, the first inorganic encapsulation layermay continuously extend without being disconnected by the overhang structure OHS as shown in. The organic encapsulation layeris located on the first inorganic encapsulation layerin the inner non-display area MA, and may overlap the overhang structure OHS as shown in.

12 FIG. 12 FIG. 7 FIG. 12 FIG. 11 FIG. 11 FIG. 10 1100 1100 u is an excerpted cross-sectional view of a portion of the display panelaccording to one or more other embodiments.may correspond to an enlarged view of a region XI ofaccording to one or more other embodiments. The structure according to one or more embodiments shown inis substantially the same as the structure described above with reference to, and is different in that the upper surface(see) of the first layeris not substantially present (e.g., is mostly omitted).

12 FIG. 8 9 FIGS.and 1100 1100 1100 1200 1100 1200 100 100 s i u Referring to, the side surfaceof the first layerand the inner surfacedefining the groove G may meet each other, or may closely approach each other. The second layermay be located on the first layer. The first angle θ between the upper surface Pu of the overhang portion P of the second layerand the imaginary plane IPL parallel to the upper surfaceof the substratemay have the range of about 0° to about 40° (e.g., 0°≤θ≤40°) as described above with reference to. In embodiments, the first angle θ may be e.g., 0°≤θ≤30°.

1115 222 222 223 310 320 310 a c 11 FIG. 11 FIG. 12 FIG. 11 FIG. 11 FIG. The protective layer, the first functional layer, the second functional layer, and the opposite electrodeare the same as those described above with reference to. The first inorganic encapsulation layermay continuously extend without being separated by the overhang structure OHS. The organic encapsulation layeris located on the first inorganic encapsulation layerin the inner non-display area MA, and may overlap the overhang structure OHS as shown in. Among structures shown in, same structures as those ofare replaced with the structures described above with reference to.

13 FIG. 7 FIG. 14 FIG. 7 FIG. 10 10 is an excerpted cross-sectional view of a portion of the display panelaccording to one or more embodiments and is an enlarged view of a region XIII of, andis an excerpted cross-sectional view of a portion of a display panelaccording to one or more other embodiments, corresponding to an enlarged view of the region XIII ofaccording to one or more other embodiments.

13 FIG. 7 FIG. Referring to, the trench TCH having a shape recessed (concave) with respect to an upper surface ILu of the inorganic insulating structure IL may be located in the inner non-display area MA. The trench area TRA is a region of the inner non-display area MA in which the trench TCH is located, and may be close to the opening area OA, as described above with reference to. The trench TCH may have a closed loop shape surrounding the opening area OA entirely in a plan view.

13 FIG. 210 209 207 207 A depth D of the trench TCH may be less than a sum T of the thicknesses of the inorganic insulating structure IL. In one or more embodiments, it is shown inthat the trench TCH passes through the upper surface and lower surface of the third interlayer insulating layer, the upper surface and lower surface of the second gate-insulating layer, and the upper surface of the second interlayer insulating layer, and the surface defining the bottom of the trench TCH is located between the upper surface and lower surface of the second interlayer insulating layer. However, the disclosure is not limited thereto. In one or more other embodiments, when the depth D of the trench TCH is less than the sum T of the thicknesses of the inorganic insulating structure IL, the trench TCH may be formed by removing a plurality of layers selected from among the layers included in the inorganic insulating structure IL.

110 13 FIG. 13 FIG. 13 FIG. 13 FIG. 5 FIG. The insulating layermay be located to overlap the trench TCH. The trench TCH includes a first edge portion (e.g., a left edge portion in) relatively closer to the opening area OA, and a second edge portion (e.g., a right edge portion in) opposite to the first edge portion, and each of the first edge portion and the second edge portion may form a step difference with respect to the upper surface of the inorganic insulating structure IL. The first edge portion (e.g., the left edge portion in) is relatively closer to the opening area OA, and the second edge portion (e.g., the right edge portion in) is opposite to the first edge portion and may be relatively closer to the display area DA (see).

110 110 530 110 110 110 110 1100 13 FIG. The insulating layermay cover a step difference relatively closer to the partition wall. As an example, it is shown inthat the insulating layeroverlaps a step difference of the second edge portion of the trench TCH relatively closer to the third partition wall. The insulating layermay cover a step difference of the second edge portion, for example, a step difference formed by the upper surface ILu of the inorganic insulating structure IL and the inner lateral surface ILi of the inorganic insulating structure IL defining the trench TCH. A portion of the insulating layermay be located on the upper surface of the inorganic insulating structure IL, and another portion may be located on the trench TCH. The insulating layermay include an organic insulating material. In one or more embodiments, the insulating layermay be formed concurrently or substantially simultaneously during the same process as the forming the first layer.

120 110 120 120 The metal layermay be located on the insulating layer. The metal layermay include aluminum (Al), copper (Cu), and/or titanium (Ti), and may include a single layer or a multi-layer including the above materials. As an example, the metal layermay have a triple-layered structure of titanium layer/aluminum layer/titanium layer.

120 120 110 120 120 8 FIG. The first overhang portionP of the metal layermay protrude toward the trench TCH from a point where a lateral surface of the insulating layer, which is tapered forward with respect to the surface defining the bottom of the trench TCH, meets the lower surface of the metal layer. Like the overhang portion P described above with reference toand the like, the length of the first overhang portionP may have a range of about 0.2 micrometers to about 0.4 micrometers.

1115 120 120 1115 120 1115 120 13 FIG. 10 FIG.B The protective layermay be located on the lateral surface and upper surface of the first overhang portionP, and may be in direct contact with the lateral surface and upper surface of the first overhang portionP. In one or more embodiments, as shown in, the protective layermay continuously cover the lateral surface and upper surface of the first overhang portionP. In one or more other embodiments, as described with reference to, the protective layermay be discontinuous on the lateral surface and upper surface of the first overhang portionP.

1117 110 1117 110 1117 1115 The second protective material layermay be located on the lateral surface of the insulating layerand the surface defining the bottom of the trench TCH. The second protective material layermay be in direct contact with the lateral surface of the insulating layerand the surface defining the bottom of the trench TCH. The second protective material layermay include the same material as the protective layer.

120 222 222 223 222 222 223 120 222 a c a c a 13 FIG. Due to the first overhang portionP, each of the first functional layer, the second functional layer, and the opposite electrodemay be separated into a plurality of portions. As shown in, each of the first functional layer, the second functional layer, and the opposite electrodemay include a portion located on the first overhang portionP and a portion located at the bottom of the trench TCH. A portion of the first functional layerlocated at the bottom of the trench TCH may be in direct contact with the surface defining the bottom of the trench TCH.

8 9 FIGS.and 13 FIG. 120 100 100 120 120 100 120 100 Similar to the upper surface of the overhang portion P described above with reference to, the first overhang portionP may be tilted downward to have a corresponding angle (e.g., preset angle) with respect to the imaginary plane IPL substantially parallel to the upper surface of the substrateor parallel to the upper surface of the substrate. In one or more embodiments, as shown in, the first overhang portionP may extend toward the trench TCH, and may be tilted downward. In one or more other embodiments, the upper surface of the first overhang portionP may be located on the imaginary plane IPL parallel to the upper surface of the substrate. A second angle φ between the upper surface of the first overhang portionP and the imaginary plane IPL parallel to the upper surface of the substratemay have a range of about 0° to about 40° (e.g., 0°≤φ≤40°). In one or more embodiments, the second angle φ may have a range of about 0° to about 30° (e.g., 0°≤φ≤30°).

14 FIG. 14 FIG. 13 FIG. 14 FIG. 120 120 100 120 120 110 In one or more other embodiments, as shown in, the upper surface of the first overhang portionP may extend toward the trench TCH, and may be tilted upward. As shown in, a third angle ω between the upper surface of the first overhang portionP and the imaginary plane IPL parallel to the upper surface of the substratemay have a range greater than about 0° and equal to or less than about 10° (e.g., 0°<ω≤10°). Like the one or more embodiments corresponding to, in a case of the one or more embodiments corresponding to, compared to the case where the first overhang portionP is tilted downward, the first overhang portionP may be relatively separated from the insulating layerand lifted upwardly, but when the range of the third angle ω is satisfied, the occurrence of the above issue may be reduced.

310 310 8 9 FIGS.and Because the first inorganic encapsulation layerhas suitable step coverage, the first inorganic encapsulation layermay continuously extend without being disconnected by the overhang structure OHS as shown in.

13 FIG. 7 FIG. 7 FIG. 7 FIG. 10 10 110 1117 As shown in, in one or more embodiments, because the display panelincludes the trench TCH, cracks occurring around the opening area OA (see) may be reduced or may be prevented from progressing toward the display area DA (see) during the process of forming the display panel. The progression of the cracks may be prevented or reduced by the structure of the trench TCH. The insulating layeroverlapping the trench TCH and the second protective material layerincluding a conductive material may absorb impacts progressing toward the display area DA (see), or may reduce or minimize the propagation of cracks together with the trench TCH.

15 15 FIGS.A toG 10 are cross-sectional views of the inner non-display area MA in the process of manufacturing the display panelaccording to one or more embodiments.

15 FIG.A 5 FIG. 100 201 203 205 207 209 210 Referring to, the inorganic insulating structure IL is formed on the substrate. The inorganic insulating structure IL may include the buffer layer, the first gate-insulating layer, the first interlayer insulating layer, the second interlayer insulating layer, the second gate-insulating layer, and the third interlayer insulating layer. The inorganic insulating structure IL may be formed in the display area DA (see), the inner non-display area MA, and the opening area OA.

The trench TCH is formed in the trench area TRA, which is a partial region of the inner non-display area MA adjacent to the opening area OA, by removing a portion of the inorganic insulating structure IL. The depth of the trench TCH may be less than the sum of the thicknesses of the inorganic insulating structure IL. The trench TCH may surround the opening area OA entirely in a plan view.

15 FIG.B 1000 1100 1200 120 120 110 110 Referring to, a plurality of overhang structures OHS are formed in the inner non-display area MA. The overhang structure OHS may be formed in the multi-layerincluding the first layerand the second layer. A overhang portion (e.g., the first overhang portionP) is formed in the metal layeron the insulating layer. The insulating layermay overlap the trench TCH.

110 120 110 120 110 120 110 120 1100 1200 13 14 FIGS.and The insulating layeris formed to overlap a step difference between the upper surface of the inorganic insulating structure IL and the trench TCH. The metal layeron the insulating layermay include the first overhang portionP. Corresponding structures of the insulating layeroverlapping the trench TCH and the metal layermay be the same as those described with reference to. The insulating layerand the metal layermay be respectively formed during the same process as the forming the first layerand the second layer.

1100 1100 1200 1200 1100 210 The first layersmay be apart from each other in the inner non-display area MA. Each of the first layersmay include the groove G, and the second layersincluding the overhang portion P protruding over the groove G may be located on two opposite sides around the groove G. The second layermay pass through the lateral surface of the first layer, and may be in direct contact with the upper surface (e.g., the upper surface of the third interlayer insulating layer) of the inorganic insulating structure IL.

15 FIG.C 1115 120 1115 1115 221 1115 221 1115 1116 1116 1115 1115 1117 1117 1115 1117 110 Referring to, the protective layermay be formed on the first overhang portionP and the overhang portion P. The protective layermay include a conductive material. The protective layermay be formed during the process of forming the pixel electrode. The protective layermay include the same material as the pixel electrode. The material forming the protective layermay be deposited in the inner non-display area MA. Accordingly, due to the overhang portion P, the first protective material layermay be at an interior of the groove G, wherein the first protective material layeris separated from the protective layerand includes the same material as the protective layer. The second protective material layermay be formed in the trench TCH, wherein the second protective material layerincludes the same material as the protective layer. The second protective material layermay be in direct contact with the surface defining the bottom of the trench TCH and the lateral surface of the insulating layer.

15 FIG.D 510 520 530 Referring to, the first partition wall, the second partition wall, and the third partition wallapart from each other may be formed in the inner non-display area MA.

510 520 530 510 530 5 FIG. Each of the first partition wall, the second partition wall, and the third partition wallmay surround the opening area OA entirely in a plan view. The first partition wallmay be relatively closer to the display area DA (see), and the third partition wallmay be relatively closer to the opening area OA.

510 1200 510 1115 1200 520 1200 520 1115 1200 530 120 1200 The first partition wallmay be located between two overhang structures OHS, and may overlap (or cover) an end of the second layer. The first partition wallmay overlap (or cover) an end of the protective layeron the second layer. The second partition wallmay be located between two overhang structures OHS, and may overlap (or cover) an end of the second layer. The second partition wallmay overlap (or cover) an end of the protective layeron the second layer. The third partition wallmay be located on a connection portion of the metal layerand the second layer.

520 510 530 520 510 520 530 510 520 530 215 217 6 FIG. 6 FIG. 5 FIG. The width of the second partition wallmay be less than the width of the first partition wall, and the width of the third partition wallmay be less than the width of the second partition wall. Each of the first partition wall, the second partition wall, and the third partition wallmay include an organic insulating material. Each of the first partition wall, the second partition wall, and the third partition wallmay include the same material as the bank layer(see) and/or the spacer(see) of the display area DA (see).

15 FIG.E 6 FIG. 6 FIG. 222 222 223 222 222 223 222 222 223 120 222 222 223 222 222 223 a c a c a c a c a c Referring to, the first and second functional layersand, and the opposite electrodeof the organic light-emitting diode OLED (see) may be formed. The first and second functional layersand, and the opposite electrodemay be formed through a thermal deposition method. Each of the first and second functional layersand, and the opposite electrodemay be also deposited on the inner non-display area MA. However, due to the eaves structures of the first overhang portionP and the overhang portion P formed in the inner non-display area MA, each of the first and second functional layersand, and the opposite electrodemay be separated into a plurality of portions. Accordingly, external moisture may be reduced, or may be prevented from progressing toward the organic light-emitting diode OLED (see) through the first and second functional layersand, and the opposite electrode.

15 FIG.E 222 222 120 223 120 a c With regard to this, it is shown inthat each of the first and second functional layersandincludes a portion located on the overhang portion P, a portion at a bottom of the groove G, a portion located on the first overhang portionP, and a portion located at the bottom of the trench TCH. Likewise, the opposite electrodemay also include a portion located on the overhang portion P, a portion at a bottom of the groove G, a portion located on the first overhang portionP, and a portion located at the bottom of the trench TCH.

15 FIG.F 300 310 310 310 120 120 310 120 310 510 520 530 Referring to, the encapsulation layermay be formed. The first inorganic encapsulation layermay be formed through chemical vapor deposition. Because the first inorganic encapsulation layerhas a relatively excellent step coverage, the first inorganic encapsulation layermay continuously cover the upper surface, lateral surface, and bottom surface of the first overhang portionP and the overhang portion P without being separated by the first overhang portionP and the overhang portion P. The first inorganic encapsulation layermay continuously cover the upper surface, lateral surface, and bottom surface of the first overhang portionP and the overhang portion P. The first inorganic encapsulation layermay also continuously cover the lateral surface and upper surface of the first to third partition walls,, and.

320 510 520 530 320 510 320 510 520 15 FIG.F Then, the organic encapsulation layermay be formed by coating and curing monomer. The first to third partition walls,, andare intended to control a flow of the monomer. In one or more embodiments, as shown in, the edge of the organic encapsulation layermay be located on one side of the first partition wall. In one or more other embodiments, a portion of the organic encapsulation layermay be present between the first partition walland the second partition wall.

330 320 310 The second inorganic encapsulation layermay be formed on the organic encapsulation layer, and may be in direct contact with the first inorganic encapsulation layerin the inner non-display area MA.

15 15 FIGS.F andG 10 10 Referring to, when elements located in the opening area OA are removed along a cutting line CL using a laser beam and the like, the openingOP of the display panelmay be formed in the opening area OA.

10 10 110 1117 10 Cracks may occur around the opening area OA due to impacts occurring during the cutting process of removing the elements located in the opening are OA. Although the cracks or impacts may progress toward the display area DA, because the display panelincludes the structure of the trench TCH, damage to the display paneldue to the cracks or impacts may be reduced or prevented. The insulating layerand the second protective material layeroverlapping the trench TCH may reduce or prevent damage to the display paneldue to the cracks or impacts together with the trench TCH.

The display panel according to the disclosed embodiments may reduce or prevent issues of crack occurrence and the like in the non-display area. The display panel according to the disclosed embodiments may reduce or prevent the inorganic encapsulation layers from being exfoliated around the opening area. The display panel according to the disclosed embodiments may reduce or prevent external impurities, such as moisture around the opening area from damaging the display elements. However, this aspect is provided as an example, and aspects according to embodiments are described in detail in the description above.

It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims, with functional equivalents thereof to be included therein.