Patentable/Patents/US-20260123065-A1
US-20260123065-A1

Systems and Methods for Breakdown Voltage Correction in Geiger-Mode Avalanche Photodiode (apd) Focal Plane Arrays (fpa)

PublishedApril 30, 2026
Assigneenot available in USPTO data we have
Technical Abstract

An apparatus includes a pixelated photodiode array (PDA), wherein each pixel in the PDA includes a radiation detector, a memory configured to store, for each pixel in the PDA, at least one of an observed dark current value or an observed leakage current value, and a read out integrated circuit (ROIC) communicatively coupled to the PDA and the memory. The ROIC is configured to read, from the memory, the at least one of the observed dark current value or the observed leakage current value for each pixel in the PDA, perform at least one of a comparison of the observed dark current value to a predetermined dark current threshold or a comparison of the observed leakage current value to a predetermined leakage current threshold, and selectively disable a pixel in the PDA based on a result of the at least one comparison, wherein the pixel is disabled when the observed dark current value exceeds the predetermined dark current threshold or when the observed leakage current value exceeds the predetermined leakage current threshold.

Patent Claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

a pixelated photodiode array (PDA), wherein each pixel in the PDA includes a radiation detector; a memory configured to store, for each pixel in the PDA, at least one of an observed dark current value or an observed leakage current value; and a read out integrated circuit (ROIC) communicatively coupled to the PDA and the memory, the ROIC being configured to: read, from the memory, the at least one of the observed dark current value or the observed leakage current value for each pixel in the PDA, perform at least one of a comparison of the observed dark current value to a predetermined dark current threshold or a comparison of the observed leakage current value to a predetermined leakage current threshold, and selectively disable a pixel in the PDA based on a result of the at least one comparison, wherein the pixel is disabled when the observed dark current value exceeds the predetermined dark current threshold or when the observed leakage current value exceeds the predetermined leakage current threshold. . An apparatus comprising:

2

claim 1 . The apparatus of, wherein each pixel in the PDA comprises one or more Geiger-mode avalanche photodiodes (GmAPDs).

3

claim 1 . The apparatus of, wherein the memory is configured to store both the observed dark current value and the observed leakage current value for each pixel in the PDA.

4

claim 1 . The apparatus of, wherein the ROIC is further configured to generate a deselect map indicating status of each pixel in the PDA based on the result of the at least one comparison.

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claim 4 . The apparatus of, wherein the deselect map indicates, for each non-performing pixel, a type of fault selected from the group consisting of: excessive dark current, excessive leakage current, and excessive noise level.

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claim 1 . The apparatus of, wherein the ROIC selectively disables a pixel by controlling an arm/disarm control circuit connected to the pixel to maintain the pixel in a disarmed state.

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claim 6 . The apparatus of, wherein the arm/disarm control circuit applies a disarm voltage to the pixel to force the pixel to remain in the disarmed state.

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claim 6 wherein the arm/disarm control circuit is configured to manipulate a voltage supply to an arming transistor to selectively apply an arm voltage or a disarm voltage to the pixel, and wherein the memory is configured to store, for the pixel, a status value indicating whether the pixel is designated for disablement. . The apparatus of,

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claim 1 . The apparatus of, wherein the observed dark current value or the observed leakage current value is obtained during a testing phase of a production process.

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claim 1 . The apparatus of, wherein a first pixel in the PDA has a first observed dark current value and a second pixel in the PDA has a second observed dark current value different from the first observed dark current value.

11

reading, from a memory by a readout integrated circuit (ROIC), at least one of an observed dark current value or an observed leakage current value for each pixel in a pixelated photodiode array (PDA), each pixel in the PDA including a respective radiation detector, wherein the ROIC is communicatively coupled to the PDA and the memory; performing, by the ROIC, at least one of a comparison of the observed dark current value to a predetermined dark current threshold or a comparison of the observed leakage current value to a predetermined leakage current threshold; and selectively disabling, by the ROIC, a pixel in the PDA based on a result of the at least one comparison, wherein the pixel is disabled when the observed dark current value exceeds the predetermined dark current threshold or when the observed leakage current value exceeds the predetermined leakage current threshold. . A method comprising:

12

claim 11 . The method of, wherein each pixel in the PDA comprises one or more Geiger-mode avalanche photodiodes (GmAPDs).

13

claim 11 reading both the observed dark current value and the observed leakage current value for each pixel in the PDA. . The method of, wherein the reading further comprises:

14

claim 11 generating, by the ROIC, a deselect map indicating status of each pixel in the PDA based on the result of the at least one comparison. . The method of, further comprising:

15

claim 14 . The method of, wherein the deselect map indicates, for each non-performing pixel, a type of fault selected from the group consisting of: excessive dark current, excessive leakage current, and excessive noise level.

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claim 11 controlling an arm/disarm control circuit connected to the pixel to maintain the pixel in a disarmed state. . The method of, wherein the selectively disabling further comprises:

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claim 16 applying a disarm voltage to the pixel via the arm/disarm control circuit to force the pixel to remain in the disarmed state. . The method of, wherein the controlling comprises:

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claim 16 wherein the arm/disarm control circuit manipulates a voltage supply to an arming transistor to selectively apply an arm voltage or a disarm voltage to the pixel, and wherein the method further comprises storing, in the memory, for the pixel, a status value indicating whether the pixel is designated for disablement. . The method of,

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claim 11 . The method of, wherein the observed dark current value or the observed leakage current value is obtained during a testing phase of a production process.

20

claim 11 . The method of, wherein a first pixel in the PDA has a first observed dark current value and a second pixel in the PDA has a second observed dark current value different from the first observed dark current value.

Detailed Description

Complete technical specification and implementation details from the patent document.

This application is a Continuation of application Ser. No. 18/675,837, filed on May 28, 2024, which is a Continuation of application Ser. No. 17/832,270, filed on Jun. 3, 2022 (now U.S. Pat. No. 12,021,107, issued on Jun. 25, 2024), the entire contents of all these applications being hereby expressly incorporated by reference into the present application.

The present disclosure relates generally to operations of focal plane arrays (FPAs). More particularly, the present disclosure relates to implementing systems and methods for improving performance of FPAs by correcting a breakdown voltage of individual detectors in the FPA-resulting in overall performance improvement and maximizing production yield.

Modern-day vehicles can be configured to operate in an autonomous mode in which the vehicle navigates through an environment with little or no input from a driver. Such autonomous vehicles can include one or more sensors that detect information about the environment in which the vehicle operates. The autonomous vehicle (AV) and its associated computer-implemented controller use the detected information to navigate through the environment. For example, if the sensors detect that the AV is approaching an obstacle, as determined by the computer-implemented controller, the controller adjusts the AV's directional controls to cause the AV to navigate around the obstacle. Accordingly, autonomous navigation depends heavily on vehicle sensors to accurately detect and map out environmental conditions encountered by the AV. One such sensor is a light detection and ranging (lidar) device. A lidar device actively estimates distances to environmental features while scanning through a scene to assemble a cloud of point positions indicative of the three-dimensional shape of the environmental scene. Individual points are measured by generating a laser pulse and detecting a returning pulse, if any, reflected from an environmental object, and determining the distance to the reflective object according to the time delay between the emitted pulse and the reception of the reflected pulse. Other sensors may include infrared (IR) sensors and other imaging sensors (e.g., focal plane arrays (FPAs)) that provide data points to enable autonomous navigation.

FPAs are image sensors consisting of arrays of light-sensing elements (e.g., pixels) at a focal plane of a lens. FPAs may be used for imaging purposes (e.g., taking pictures or video imagery) as well as non-imaging purposes such as spectrometry, wave-front sensing, lidar, and other sensor applications.

b ov b br ov b br ov b br ov ov Limitations in semiconductor device fabrication (e.g., III-V semiconductor devices such as FPAs) often result in some non-performant devices on a fabricated wafer and/or large variation in device performance and characteristics. In the case of Geiger-mode avalanche photodiode (GMAPD) devices, one of the characteristics that can vary at the wafer level is the breakdown voltage. For FPAs in which each pixel contains a GMAPD device, the variation in breakdown voltage among these pixels leads to variation in pixel-level attributes such as photon detection efficiency, noise rates, and other performance characteristics. Existing FPAs are operated by applying a single voltage bias Vto all pixels of the array. Critical GMAPD performance parameters depend on an overbias Vvoltage, which is the difference between the total bias Vand the breakdown voltage V—i.e., V=V−V. Ideally, a focal plane array consisting of GMAPDs would have identical performance from pixel to pixel by applying the same overbias Vto all pixels. However, if a single value of voltage bias Vis applied to all pixels and the breakdown voltage Vvaries from pixel to pixel, then Vwill vary from pixel to pixel, along with the performance parameters that depend on V.

The inability of a system deploying FPAs to compensate for variabilities of breakdown voltage from pixel to pixel will lead to variation of detection capabilities of the FPA—resulting in reduced accuracy and performance of the FPA and the underlying system deploying it (e.g., AV). Accordingly, improving the overall uniformity of performance of FPAs with pixel-level variation will be vital for the operation of FPAs, thereby improving the detection capabilities of the respective sensors and the autonomous navigation of the AV. The present systems and methods of this disclosure address the aforementioned problems.

Disclosed herein, in accordance with aspects, are systems and methods for optical processing. According to some aspects, an optical processing apparatus is disclosed, the apparatus comprising a pixelated photodiode array (PDA), wherein each pixel in the PDA includes a radiation detector; a memory configured to store one or more characteristics for each pixel in the PDA, and a read out integrated circuit (ROIC) communicatively coupled to the PDA and the memory. According to some aspects, the ROIC may be configured to read, from the memory, the one or more characteristics for each pixel in the PDA, and adjust an arm/disarm bias voltage for each pixel in the PDA based on the one or more characteristics.

According to some aspects, an optical processing method is disclosed, the method comprising reading, from a memory by a readout integrated circuit (ROIC), one or more characteristics for each pixel in a pixelated photodiode array (PDA), each pixel in the PDA including a respective radiation detector, wherein the ROIC is communicatively coupled to the PDA and the memory. The method may also comprise adjusting, by the ROIC, an arm/disarm bias voltage for each pixel in the PDA based on the one or more characteristics.

According to some aspects, a read out integrated circuit (ROIC) communicatively coupled to a pixelated photodiode array (PDA) and a memory is disclosed. The ROIC may be configured to store characteristics for each pixel in the PDA, wherein each pixel in the PDA includes a radiation detector. The ROIC may be further configured to read from the memory the characteristics for each pixel in the PDA, and adjust an arm/disarm bias voltage for each pixel in the PDA based on a respective characteristic of each pixel.

In the drawings, like reference numbers generally indicate identical or similar elements. Additionally, generally, the left-most digit(s) of a reference number identifies the drawing in which the reference number first appears.

The development and mass production of autonomous vehicles (AVs) has the potential to revolutionize transportation mobility and safety. AVs combine a variety of sensors to perceive their surroundings, such as radar, lidar, sonar, GPS, odometry, and inertial measurement devices. In some aspects, advanced control systems may interpret sensory information to identify appropriate navigation paths, as well as to detect obstacles and relevant signage.

220 One key sensor that AVs rely on is lidar, which relies on systems and methods for determining ranges by targeting an object with a laser and measuring the time for the reflected light to return to the receiver. According to some aspects, lidar may be used to make digital 3-D representations of areas of a perception region (e.g., an area surrounding the AV). Within the 3-D representations (also known as lidar grids), a lidar computing system, or an on-board computing device (such as computing devicediscussed herein) may detect a moving object within the perception region, may generate one or more possible object trajectories for the detected object and the AV, and may analyze the possible object trajectories to assess the probability of a collision between the object and the AV. The performance and accuracy of the sensor system, including the lidar, enable an AV to successfully navigate a route irrespective of the obstacles. To this end, the hardware components making up a sensor like lidar need to operate at optimum performance.

Manufacturing sensors, such as lidar, can include acceptable tolerance of non-performant parts. For example, limitations in semiconductor device fabrication (e.g., III-V semiconductor devices such as FPAs) often result in some non-performant devices on a fabricated wafer and/or variations in the performance of such devices. In other words, a manufactured FPA may include a number of non-performant pixels that may affect the overall performance of the FPA, and thereby, the overall performance of the sensor, e.g., lidar, and the autonomous navigation operation.

When manufacturing FPAs, a manufacturer may discover a number of FPAs have a high level of non-performant elements (e.g., noisy, leaky, non-functioning pixels, or pixels with variable turn on voltages) that may degrade the performance of the FPA. Typically, such discovery leads a manufacturer to either discard such FPA (thereby significantly reducing the yield of production) or deploying the FPAs within the field (thereby leading to reduced detection accuracy and sub-optimal sensor performance). To address these concerns, the present disclosure provides for systems and methods that selectively correct breakdown voltages of non-performing elements. It can be appreciated that such systems may be deployed during a manufacturing process, e.g., during testing, and also in the field, e.g., during operation.

220 According to aspects of the present disclosure, systems and methods are provided for improved detection of objects by managing the arming operations on a per-pixel level of an FPA. This enables the system to compensate or correct for breakdown voltage variations of pixels in the FPA that can adversely affect and degrade the performance of other nearby pixels. The benefits provided by the embodiments discussed herein decrease processing time and bandwidth, and can further enable on-board computing deviceto generate faster object trajectories. This is especially important for AVs operating in the field, where faster and more accurate detection and decision-making capabilities (due to decreased processing time and bandwidth) can help an AV generate and execute faster navigation-based decisions, thereby resulting in improved autonomous navigation operations of the AV. As also noted herein, the reduction of processing time and bandwidth also improves power consumption, thereby increasing a total range of a battery-operated AV for example.

It can be appreciated that the techniques described herein provide several benefits over existing systems. For example, existing systems provide global biasing of all the PDA pixels to the same armed state. In this case, pixel-level performance variation and the resulting variable data can provide sub-optimal outputs from the FPA. The ability to correct breakdown voltage when the APD operates in Geiger-mode, as described in the present disclosure, provides higher-performing FPAs and also leads to higher FPA module yield for manufacturers.

In some aspects, the selective voltage bias adjustments to compensate for breakdown voltage variation may be done at a testing phase during module assembly or in the field. As will be further described herein, the disclosure also provides for circuitry that can allow for adjustments to be done in the field. For example, in factory-level tests, the effective breakdown voltage of any given pixel is determined to be the voltage at which the pixel first starts to generate a non-zero dark count rate for Geiger-mode measurements. This type of measurement could be made in the field as well. It would also be possible to make direct measurements of other performance parameters—e.g., the photon detection efficiency (PDE)—and make voltage bias corrections that essentially equalize the PDE across the FPA. Accordingly, the disclosed solutions provide for corrective measures of FPAs that develop pixel performance variation while deployed in operation. For example, where an FPA is deployed in an AV and pixel-level performance uniformity degradation is detected, voltage bias adjustments to compensate for the breakdown voltage variation may be performed. Such performance improvements provide benefits for manufacturers and system integrators alike. For example, a manufacturer can produce a higher FPA module yield by leveraging the selective biasing techniques described herein (rather than discarding the FPAs). Moreover, system integrators that integrate the FPAs in the field, e.g., in lidar systems or other sensors, can extract higher performance from each deployed FPA by also leveraging the selective biasing techniques to compensate for breakdown voltage variations. This, in turn, leads to improved detection capabilities of the sensor (e.g., lidar), leading to improved autonomous navigation with regard to speed and accuracy.

The following may be an example description of a solution (autonomous vehicle and associated sensors) incorporating the systems and methodologies described herein. It can be appreciated by those skilled in the art that such an example is not limiting, and other applications within other sensors and solutions may also be deployed.

According to some aspects, the term “vehicle” refers to any moving form of conveyance that is capable of carrying either one or more human occupants and/or cargo and is powered by any form of energy. The term “vehicle” includes, but is not limited to, cars, trucks, vans, trains, autonomous vehicles, aircraft, aerial drones, and the like. An “autonomous vehicle” (or “AV”) is a vehicle having a processor, programming instructions and drivetrain components that are controllable by the processor without requiring a human operator. An autonomous vehicle may be fully autonomous in that it does not require a human operator for most or all driving conditions and functions, or it may be semi-autonomous in that a human operator may be required in certain conditions or for certain operations, or that a human operator may override the vehicle's autonomous system and may take control of the vehicle.

Notably, the present solution is being described herein in the context of an autonomous vehicle. However, the present solution is not limited to autonomous vehicle applications. The present solution may be used in other applications such as robotic applications, radar system applications, metric applications, and/or system performance applications. It can be appreciated that the embodiments used herein describe aspects of the present solution. It can also be appreciated that all embodiments are exemplary and can be combined with other embodiments.

1 FIG. 1 FIG. 100 100 102 102 102 102 a a a a illustrates an exemplary autonomous vehicle system, in accordance with aspects of the disclosure. Systemcomprises a vehiclethat is traveling along a road in a semi-autonomous or autonomous manner. Vehicleis also referred to herein as autonomous vehicle (AV). AVcan include, but is not limited to, a land vehicle (as shown in), an aircraft, or a watercraft.

102 102 114 116 102 114 116 102 102 102 102 102 102 a b b a a a a a a AVis generally configured to detect objects,, andin proximity thereto. The objects can include, but are not limited to, a vehicle, cyclist(such as a rider of a bicycle, electric scooter, motorcycle, or the like) and/or a pedestrian. When such a detection is made, AVperforms operations to generate one or more possible object trajectories for the detected object and analyze at least one of the generated possible object trajectories to determine whether or not there is an undesirable level of probability that a collision will occur between the AV and object in a threshold period of time (e.g., 1 minute). This may also be referred to as collision probability assessment hereinafter. If so, the AVperforms operations to determine whether the collision can be avoided if a given vehicle trajectory is followed by the AVand any one of a plurality of dynamically generated emergency maneuvers is performed in pre-defined time period (e.g., N milliseconds). If the collision can be avoided, then the AVtakes no action or optionally performs a cautious maneuver (e.g., mildly slows down). In contrast, if the collision cannot be avoided, then the AVimmediately takes an emergency maneuver (e.g., brakes and/or changes direction of travel). Other approaches to collision detection and avoidance by AVare contemplated by this disclosure as would be understood by one skilled in the relevant art.

3 FIG. 102 300 300 304 104 102 104 102 300 106 308 300 102 308 308 a a b a As will be described in greater detail in association with, AVmay be configured with a lidar system. Lidar systemmay include a light emitter system(transmitter) that transmits a light pulseto detect objects located within a distance or range of distances of AV. Light pulsemay be incident on one or more objects (e.g., AV) and be reflected back to lidar system. Reflected light pulseincident on light detectoris processed by lidar systemto determine a distance of that object to AV. Light detectormay, in some embodiments, contain a photodetector or array of photodetectors positioned and configured to receive the light reflected back into the system. For example, light detectormay contain a focal plane array including a photodiode array (PDA) and a readout integrated circuit (ROIC). According to some aspects, each pixel of the PDA may be electrically connected to a dedicated channel of the ROIC such that the ROIC controls the arming and disarming of individual PDA pixels through a bias circuit as will be further described herein. According to some aspects, the PDA may contain Geiger-mode avalanche photodiodes (GmAPD), which is capable of providing single photon detection levels.

In some aspects, silicon photodiodes convert light into an electrical signal. This conversion occurs when photons having more energy than the bandgap of the detector material are absorbed, exciting an electron from the valence band of the semiconductor to the conduction band, where it is read out as a signal. GmAPDs use the same process, but they generate internal gain using an avalanche multiplication process. An avalanche region is produced within the APD, creating an area of very high electric field strength. When a photogenerated (or thermally generated) electron in the conduction band moves into the avalanche region, the electric field strength is sufficient to accelerate it to the point at which it can cause “impact ionization” and liberate another electron. Both of these electrons can be accelerated as well, creating an avalanche multiplication. This process results in detector gain. Typical gains for an APD are in the range of ten to a few hundred.

b b b 5 Geiger-mode operation can increase the modest gain of an APD to a more significant level. The gain of an APD increases with stronger internal electric field but remains finite up to a threshold breakdown electric field Eb established by a corresponding externally applied breakdown voltage V. For applied voltages less than V, the output photocurrent of the APD is proportional to the input optical intensity, and device operation below the breakdown voltage is referred to as “linear mode”. In contrast, applied voltages greater than Vlead to a finite probability that a single carrier injected into the avalanche region will trigger a self-sustaining avalanche characterized by divergent (i.e., infinite) gain. This rapid generation of easily measured avalanche currents triggered by just a single photoexcited carrier allows for the efficient detection of single photons. In practical operation, the self-sustaining Geiger-mode avalanches are quenched once they are detected. In this case, one refers to an effective gain given by the number of charges (typically >>10) that flow in response to the injection of just a single electron into the avalanche region.

In some cases, the quenching and the reset of the GmAPD can be accomplished passively by placing a sufficiently large resistor in series with the detector. A fixed bias voltage is applied across the series combination of the GmAPD and the resistor. When no current is flowing, the entire bias is dropped across the GmAPD, and it is in its “armed” state. When the junction breaks down, a large current flows through the resistor, and the resulting voltage drop across the resistor reduces the voltage across the GmAPD, allowing the avalanche process to passively quench into the “disarmed” state. In other cases, when avalanche breakdown is detected, the bias voltage is actively reduced below the breakdown voltage and the GmAPD avalanche is actively quenched. Following either type of quenching to the “disarmed” state, the bias voltage across the GmAPD is then reset to a value above the breakdown voltage so that it is again armed to make subsequent detections. The discharge-and-reset cycle is known as the Geiger mode of operation.

4 FIG. 4 FIG. dc dc As will be further discussed with regard to, aspects of the disclosure aim to selectively adjust voltage biases of pixels to compensate for breakdown voltage variation to achieve a desired detection efficiency (e.g., uniform or otherwise specified). For FPAs using GmAPDs, the PDA may be armed and disarmed by manipulating a net applied reverse voltage in relation to a GmAPD breakdown voltage. For example, a PDA may be armed when the net applied reverse voltage is above a breakdown voltage of the GmAPD. Similarly, a PDA may be disarmed when the net applied reverse voltage is below the GmAPD breakdown voltage. It can be appreciated that by increasing the reverse voltage to a bias above the breakdown voltage, the PDA is considered armed. According to some aspects, a total voltage on the PDA may be the sum of a fixed negative DC bias voltage (V) and an additional arming bias applied by the ROIC. For example, for an arming bias in which an arming transistor switches between +5V and 0V (ground), the (negative) sum V+5V leaves the PDA in the disarmed state. In other words, instead of arming the entire PDA, the present disclosure enables voltage bias adjustments to compensate for breakdown voltage variations between each pixel to achieve a desired detection efficiency. The selective biasing described herein may be performed through a biasing circuit, as described in.

300 220 102 110 108 110 110 102 108 112 2 FIG. a a Lidar information, such as detected object data, is communicated from lidar systemto an on-board computing device(). AVmay also communicate lidar data to a remote computing device(e.g., cloud processing system) over communications network. Remote computing devicemay be configured with one or more servers to process one or more processes of the technology described herein. Remote computing devicemay also be configured to communicate data/instructions to/from AVover network, to/from server(s) and/or database(s).

108 108 Networkmay include one or more wired or wireless networks. For example, the networkmay include a cellular network (e.g., a long-term evolution (LTE) network, a code division multiple access (CDMA) network, a 3G network, a 4G network, a 5G network, another type of next generation network, etc.). The network may also include a public land mobile network (PLMN), a local area network (LAN), a wide area network (WAN), a metropolitan area network (MAN), a telephone network (e.g., the Public Switched Telephone Network (PSTN)), a private network, an ad hoc network, an intranet, the Internet, a fiber optic-based network, a cloud computing network, and/or the like, and/or a combination of these or other types of networks.

102 108 112 112 a AVmay retrieve, receive, display, and edit information generated from a local application or delivered via networkfrom database. Databasemay be configured to store and supply raw data, indexed data, structured data, map data, program instructions or other configurations as is known.

2 FIG. 1 FIG. 2 FIG. 1 FIG. 2 FIG. 200 102 102 200 102 102 a b a b illustrates an exemplary system architecturefor a vehicle, in accordance with aspects of the disclosure. Vehiclesand/orofcan have the same or similar system architecture as that shown in. Thus, the following discussion of system architectureis sufficient for understanding vehicle(s)and/orof. However, other types of vehicles are considered within the scope of the technology described herein and may contain more or fewer elements as described in association with. As a non-limiting example, an airborne vehicle may exclude brake or gear controllers, but may include an altitude sensor. In another non-limiting example, a water-based vehicle may include a depth sensor. One skilled in the art will appreciate that other propulsion systems, sensors and controllers may be included based on a type of vehicle, as is known.

2 FIG. 200 202 204 218 204 206 208 210 212 214 216 218 As shown in, system architectureincludes an engine or motorand various sensors-for measuring various parameters of the vehicle. In gas-powered or hybrid vehicles having a fuel-powered engine, the sensors may include, for example, an engine temperature sensor, a battery voltage sensor, an engine Rotations Per Minute (“RPM”) sensor, and a throttle position sensor. If the vehicle is an electric or hybrid vehicle, then the vehicle may have an electric motor, and accordingly includes sensors such as a battery monitoring system(to measure current, voltage, and/or temperature of the battery), motor currentand voltagesensors, and motor position sensorssuch as resolvers and encoders.

236 238 240 242 242 Operational parameter sensors that are common to both types of vehicles include, for example: a position sensorsuch as an accelerometer, gyroscope, and/or inertial measurement unit; a speed sensor; and an odometer sensor. The vehicle also may have a clockthat the system uses to determine vehicle time during operation. The clockmay be encoded into the vehicle's on-board computing device, it may be a separate device, or multiple clocks may be available.

260 262 264 266 268 200 The vehicle also includes various sensors that operate to gather information about the environment in which the vehicle is traveling and to detect objects. These sensors may include, for example: a location sensor(e.g., a Global Positioning System (“GPS”) device); one or more cameras; a lidar system; and/or a radar and/or a sonar system. The sensors also may include environmental sensorssuch as a precipitation sensor and/or ambient temperature sensor. The object detection sensors may enable the vehicle to detect objects that are within a given distance range of the vehiclein any direction, while the environmental sensors collect data about environmental conditions within the vehicle's area of travel.

220 220 220 222 224 226 228 230 254 During operations, information is communicated from the sensors to a vehicle on-board computing device. The vehicle on-board computing deviceanalyzes the data captured by the sensors and optionally controls operations of the vehicle based on results of the analysis. For example, the vehicle on-board computing devicemay control: braking via a brake controller; direction via a steering controller; speed and acceleration via a throttle controller(in a gas-powered vehicle) or a motor speed controller(such as a current level controller in an electric vehicle); a differential gear controller(in vehicles with transmissions); and/or other controllers. Auxiliary device controllermay be configured to control one or more auxiliary devices, such as testing systems, auxiliary sensors, mobile devices transported by the vehicle, etc.

260 220 262 264 220 220 200 Geographic location information may be communicated from the location sensorto the vehicle on-board computing device, which may then access a map of the environment that corresponds to the location information to determine known fixed features of the environment such as streets, buildings, stop signs and/or stop/go signals. Captured images from the camerasand/or object detection information captured from sensors such as lidar systemis communicated (from those sensors) to the on-board computing device. The object detection information and/or captured images are processed by the on-board computing deviceto detect objects in proximity to the vehicle. Any known or to be known technique for making an object detection based on sensor data and/or captured images can be used in the embodiments disclosed in this document.

308 264 220 262 220 220 200 220 Lidar information, as captured by detectorfor example, is communicated from lidar systemto the on-board computing device. Additionally, captured images are communicated from the camera(s)to the vehicle on-board computing device. The lidar information and/or captured images are processed by the vehicle on-board computing deviceto detect objects in proximity to the vehicle. The manner in which the object detections are made by the vehicle on-board computing deviceincludes such capabilities detailed in this disclosure.

264 308 220 220 As can be appreciated by those skilled in the art, improving the detecting capabilities of lidar system, and more specifically, detector, the vehicle on-board computing devicecan receive more accurate detections and generate more accurate object tracking and trajectories for detected objects. This leads to improved autonomous navigation because at least one sensor in the vehicle sensor suite is providing improved and more accurate detection information. Such improvements provide for more downstream benefits. For example, processing more accurate information can lead the vehicle on-board computing deviceto perform analysis and provide solutions on a faster rate because less computing bandwidth may be spent on checking sensor accuracy data.

3 FIG. 2 FIG. 2 FIG. 300 264 300 300 264 illustrates an exemplary architecture for a lidar system, in accordance with aspects of the disclosure. In some aspects, lidar systemofmay be the same as or substantially similar to the lidar system. As such, the discussion of lidar systemis sufficient for understanding lidar systemof.

3 FIG. 3 FIG. 300 306 315 316 312 300 312 212 306 306 306 As shown in, the lidar systemincludes a housingwhich may be rotatable 360° about a central axis such as hub or axleof motor. The housing may include an emitter/receiver aperturemade of a material transparent to light. Although a single aperture is shown in, the present solution is not limited in this regard. In other scenarios, multiple apertures for emitting and/or receiving light may be provided. In each scenario, the lidar systemcan emit light through one or more of the aperture(s)and receive reflected light back toward one or more of the aperture(s)as the housingrotates around the internal components. In an alternative scenario, the outer shell of housingmay be a stationary dome, at least partially made of a material that is transparent to light, with rotatable components inside the housing.

304 312 306 304 308 304 308 306 Inside the rotating shell or stationary dome is a light emitter systemthat is configured and positioned to generate and emit pulses of light through the apertureor through the transparent dome of the housingvia one or more laser emitter chips or other light-emitting devices. The emitter systemmay include any number of individual emitters (e.g., 8 emitters, 64 emitters, or 128 emitters). The emitters may emit light of substantially the same intensity or of varying intensities. The lidar system also includes a light detectorcontaining a photodetector or array of photodetectors (e.g., a focal plane array (FPA) including a photodiode array (PDA) and/or a Geiger mode PDA) positioned and configured to receive light reflected back into the system. In one example, the light emitter systemand light detectorwould rotate with the rotating shell, or they would rotate inside the stationary dome of the housing. It can be appreciated that the mechanical lidar system described herein is but an example lidar system relied on by aspects of the present solution and that other examples of lidar systems, such as solid-state lidar systems may also be implemented.

310 304 308 310 In some aspects, one or more optical element structuresmay be positioned in front of the light emitter systemand/or the light detectorto serve as one or more lenses or waveplates that focus and direct light that is passed through the optical element structure.

310 310 310 310 310 310 306 One or more optical element structuresmay be positioned in front of a mirror (not shown) to focus and direct light that is passed through the optical element structure(e.g., such as in a focal plane array). The system includes an optical element structurepositioned in front of a mirror and connected to the rotating elements of the system so that the optical element structurerotates with the mirror. Alternatively or in addition, the optical element structuremay include multiple such structures (for example lenses and/or waveplates). Optionally, multiple optical element structuresmay be arranged in an array on or integral with the shell portion of the housing.

300 318 304 316 300 314 322 320 314 300 According to some aspects, lidar systemincludes a power unitto power the light emitting system, a motor, and electronic components. Lidar systemalso includes an analyzerwith elements such as a processorand non-transitory computer-readable memorycontaining programming instructions that are configured to enable the system to receive data collected by the light detector unit, analyze it to measure characteristics of the light received, and generate information that a connected system can use to make decisions about operating in an environment from which the data was collected. Optionally, the analyzermay be integral with the lidar systemas shown, or some or all of it may be external to the lidar system and communicatively connected to the lidar system via a wired or wireless communication network or link.

300 220 264 300 220 4 5 FIGS.- According to some aspects, lidar systemmay generate and provide an output to a vehicle on-board computing system (e.g., on board computing device). Such output may include a three-dimensional (3-D) mapping of a perception region (an area illuminated by lidaror lidar system. According to some aspects, the three-dimensional mapping may also be referred to as the lidar grid, where grid cells may each provide a proportional representation of the perception region. When an object is detected within the lidar grid, on-board computing devicemay attempt to generate a point cloud mapping (e.g., a lidar grid) including the detected object to then generate a collision threat assessment and potential navigation instructions to other AV systems. Accordingly, the systems and methods for improving the detection capabilities and performance of FPA are described herein with regard tobelow.

4 FIG. 400 400 402 404 406 408 410 412 400 402 406 408 410 412 400 400 illustrates an exemplary partial schematic of a focal plane array (FPA), according to some embodiments. FPAmay include photodiode, high voltage source, arm/disarm control circuit, disarm voltage, arm voltage, and counter stop. It can be appreciated that manipulation of the arm and disarm voltages can provide the requisite biasing voltage adjustments to compensate for breakdown voltage variations. According to some aspects, FPAmay include a pixelated photodiode array (PDA) that includes photodiode. According to some aspects, the PDA may include Geiger-mode avalanche photodiodes (GmAPDs). According to some aspects, arm/disarm control circuitalong with disarm voltage, arm voltage, and counter stopmay be part of a readout integrated circuit (ROIC). It can be appreciated that the ROIC may be included as part of FPA. According to some aspects, the ROIC may also be fabricated outside of FPA.

404 402 402 406 402 406 406 406 400 406 400 According to some aspects, high voltage sourcemay be connected to a cathode of photodiode. Photodiodemay be a GmAPD photodiode. According to some aspects, arm/disarm control circuitmay be configured as a biasing circuit to dynamically raise a bias voltage (e.g., high voltage supply) to be above the breakdown voltage of photodiode. In one example, when an avalanche event occurs (e.g., when light is received), arm/disarm control circuitquenches (i.e., stops) the avalanche current, and a counter stop mechanism is triggered. In some aspects, to prevent the photodiode from being armed above its breakdown voltage, the arm/disarm control circuitmay not assert the arming control signal. According to some aspects, the arm/disarm control circuitmay be a stand-alone device within FPA. Alternatively, arm/disarm control circuitmay be part of an ROIC within FPA. It can be appreciated that the ROIC may be a silicon-based integrated circuit performing any number of electronic functionalities beyond the outputs of the photodiodes in the PDA.

402 402 402 4 FIG. It can be appreciated that the PDA may be a pixelated photodiode array where each pixel in the PDA includes a radiation detector such as photodiode. Moreover, whileillustrates a single biasing circuit, it can be appreciated that the PDA interfaces to a plurality of biasing circuits each connected to a respective radiation detector (e.g., photodiode) to selectively compensate for breakdown voltage variations. As noted herein, the selective compensating for the breakdown voltage variations may depend on observed performance of each photodiodein the PDA such that variable pixels (e.g., pixels with different observed breakdown voltages than an expected, average, desired amount for the circuit) may be selectively compensated according to aspects of the disclosure.

406 406 406 406 402 As described herein, aspects of the disclosure provide for the compensating of pixel performance variation by providing addressable pixel-level biasing circuits, such as arm/disarm control circuit, that selectively compensate for breakdown voltage variations. In this regard, arm/disarm circuitmay manipulate the arm/disarm voltage supply to an arming transistor to compensate for the breakdown voltage variability. In one example, arm/disarm circuitmay manipulate the voltage supply of the arming transistor to its +5V rail and not allow the transistor to be pulled to ground. This forces the associated PDA pixel to disarm (or remain in a disarmed state) thereby resetting the PDA pixel. To place a pixel in an armed state, arm/disarm control circuitmay apply a net reverse voltage value above the breakdown voltage of photodiode.

402 It can be appreciated that the detection of pixel-level variation may be performed during a testing phase and a status of the pixels may be stored as part of a deselect map. In some aspects, the deselect map may indicate status of each pixel in the PDA and the type of fault that may be associated with each pixel, if any, including any measured/detected variation in the breakdown voltage. For example, the deselect map may include a status associated with photodiodeindicating that the photodiode is non-performing. It can be appreciated that other non-performing status may be stored in the deselect map, including, but not limited to, observed dark current values above a predetermined dark current threshold, and/or observed leakage current level above a predetermined leakage current threshold value.

ov b br ov b br ov b br ov ov br1 br2 br1 br2 dc a/d arm disarm dc arm ov dc arm br1 ov br1 ov ov ov arm arm1 arm2 406 406 According to some aspects, the following is an example illustrating the selectable biasing of the breakdown voltage of a photodiode to arm at a desired bias voltage based on the physical attributes of the photodiode itself. As described earlier, critical GMAPD performance parameters depend on an overbias V, which is the difference between the total bias Vand the breakdown voltage V—i.e., V=|V−V|. Ideally, a focal plane array consisting of GMAPDs would have identical performance from pixel to pixel by applying the same overbias Vto all pixels. However, if a single value of voltage bias Vis applied to all pixels and the breakdown voltage Vvaries from pixel to pixel, then Vwill vary from pixel to pixel, along with the performance parameters that depend on V. As noted herein, semiconductor wafer fabrication and processing can lead to large variations in device performance and characteristics. Such variation may be manifested in devices operating at different nominal breakdown voltages (e.g., a first device in the PDA operating at a first nominal breakdown voltage, V, and a second device in the PDA operating at a second nominal breakdown voltage, V). A nominal breakdown voltage value is a value threshold above which a single electron-hole pair can trigger an avalanche event. In one example, Vmay be of a different value than V(e.g., −80V vs. −79V). It can be appreciated that the values discussed herein are exemplary, and other nominal values may be measured and compensated for. According to some aspects, a total voltage on the PDA may be the sum of a fixed negative DC bias voltage (V) and an additional arm/disarm bias Vapplied by the ROIC. In current practices, an ROIC connected to the PDA is programmed to provide the same arm/disarm bias voltages (Vand V) across the entire PDA. Accordingly, given that Vis the same fixed value across the entire PDA, using an ROIC arming voltage Vof 0 V (i.e., ground) across the entire PD may result in the first device having a different overbias voltage Vthan the second device. For example, assuming V=−83 V and V=0 V, the first device (with V=−80 V) would be operating at an overbias of V=3 V while the second device (with V=−79 V) would be operating at an overbias of V=4 V. The value of the overbias voltage Vis the key factor in determining GmAPD performance, and variation in Vacross the PDA results in different detection capabilities and characteristics when the devices are armed. To address this deficiency, arm/disarm control circuitmay vary the arming bias Vso that the first and second devices with different values—e.g., Vand V—can have the same overbias voltage value. That is, irrespective of the variation in the physical attributes of the different photodiodes in the array, arm/disarm control circuitprovides for voltage bias adjustments that compensate for the breakdown voltage variation. This ensures uniform detection efficiency of the APD.

406 402 404 406 404 402 According to some aspects, to generate variable adjustments for a bias voltage to compensate for the breakdown voltage variation and ensure a uniform detection efficiency of the APD, arm/disarm control circuitmay be arranged in a manner as follows: photodiodemay be connected to high voltage sourceat a cathode end while connecting to arm/disarm circuitat an anode end. In one example, high voltage sourcemay supply a high voltage sufficient enough to bias photodiodeabove its breakdown voltage and/or up to a desired voltage level above the breakdown voltage.

406 The following are examples illustrative of arm and disarm states controlled by arm/disarm control circuit. In arming and disarming the respective PDA pixels, arm/disarm control circuit also controls bias values for each respective pixel that compensate for any variation in measured breakdown voltages of each pixel. It can be appreciated that the values illustrated in the following scenarios are exemplary, and other values may also be considered and implemented as those skilled in the art would understand.

408 410 406 408 402 402 404 406 402 402 Disarm state: in one example, disarm voltagemay be a +5V voltage while arm voltagemay be 0V (e.g., ground). In this example, arm/disarm control circuitmay apply disarm voltageat the anode of photodiodeto generate a reverse bias voltage sufficient enough to disarm photodiode. For example, if high voltageis −83 V, then arm/disarm circuitapplying the +5V at the anode reverse biases the photodiodeto a value of −78 V, which is below its nominal breakdown voltage of −80 V. This results in disarming photodiode.

406 402 410 402 br1 Arm state for first device in the APD: in one example, arm/disarm control circuitmay apply an arm voltage sufficient to keep the reverse bias value across photodiodeabove its nominal breakdown voltage of V=−80 V. In this case, arm voltagemay be set to 0 V and photodiodemay be operating at −83 V, which is a 3V overbias above its nominal breakdown voltage of −80 V.

br2 br1 br2 br1 406 410 406 Arm state for second device in the APD: assume now that a second device in the APD has a different nominal breakdown voltage. As noted herein, an example of a nominal breakdown voltage Vmay be higher or lower than V. Assuming that Vis lower than V, e.g., −79 V, arm/disarm control circuitmay set arm voltageto +1 V, and the second device (not shown) may then operate at −82 V, which is an overbias voltage of 3 V above its nominal voltage value of −79 V. Therefore, even though the two devices have different breakdown voltages, they can both be operated at the same 3 V overbias voltage. By compensating for breakdown voltage variation, arm/disarm control circuitcan achieve a uniform overbias voltage, leading to corresponding uniformity in performance parameters that directly depend on overbias, such as photon detection efficiency.

406 ov br1 br2 Accordingly, aspects of the disclosure provide for equalizing the applied overbias for all pixels (e.g., photodiodes) by implementing pixel-dependent voltage bias swings (e.g., control of the arming voltage values) via arm/disarm control circuitfor example. In doing so, each ROIC channel may be programmed to switch its corresponding PDA pixel from the disarm voltage (e.g., +5V rail) to a selectable voltage value that can be above ground. In this way, variation in the breakdown voltage can be compensated by correlated pixel-level variation in the voltage bias such that all pixel overbias voltage values are equivalent. According to some aspects of the disclosure, selectively applying different arming voltages by the ROIC leads to a uniform overbias voltage (V=3 V) for all pixels in a PDA. As illustrated in the above example, for two pixels that have different breakdown voltages (e.g., −80 V and −79 V for Vand Vrespectively) selectively applying different arming voltages leads to uniform overbias voltage operation for the PDA, leading to a more uniform and predictable performance as well.

As noted herein with regard to existing GMAPD FPAs, inherent process variation in the PDAs remains a limiting factor in the uniformity of FPA performance. This can affect device yield significantly if the performance variation is too great to be acceptable in the application space. Existing FPAs employ ROICs with voltage biasing that is identical for all array pixels, and PDA-level variation leads to variation in the overall FPA behavior. According to some aspects, an advantage of the systems and methods of the present disclosure is that they compensate for the inherent PDA-level variability and limitations of current semiconductor processing technology using additional functionality in the ROIC to equalize pixel-level biasing. This creates more uniform FPA performance and improves the overall yield of devices that meet system-level requirements.

5 FIG. 500 500 illustrates an exemplary optical processfor performing the biasing operations described herein. According to some aspects, processmay include storing, in a memory of an optical processing device, one or more characteristics for each pixel of a pixelated photodiode array (PDA) within a focal plane array (FPA), (not shown). For example, the storing may be performed at a testing phase of the FPA during a production process to determine performance metrics of the FPA. According to some aspects, the one or more characteristics of each pixel may relate to observed performance during the testing, including, for example, noise levels, leakage current, breakdown voltage (e.g., nominal breakdown voltage), and the like.

500 502 500 504 406 4 FIG. According to some aspects, processfurther includes reading out, by a read out integrated circuit communicatively coupled to each pixel of the PDA and the memory, the one or more characteristics for each pixel in the PDA, as illustrated in step. The readout may include reading out the nominal breakdown voltage of the pixel to determine any potential bias voltage requirements for operating the pixel in Geiger mode. According to some aspects, processfurther includes adjusting an arm/disarm bias voltage for each pixel in the PDA based on the readout one or more characteristics of each pixel, as illustrated in step. It can be appreciated that each pixel in the PDA may include Geiger-mode avalanche photodiodes (GmAPD) such that the one or more characteristics include a breakdown voltage of the GmAPD. As noted herein, the breakdown voltage variation can be compensated by the arm/disarm control circuitin order to equalize the pixel level biasing. According to some aspects described in, the bias voltage of each pixel can be adjusted upwards in response to the breakdown voltage of the pixel being below a predetermined threshold (e.g., a nominal breakdown voltage for an entire APD). Similarly, the bias voltage of a pixel can be adjusted downwards in response to the breakdown voltage of the pixel being above the predetermined threshold.

408 406 According to some aspects, the bias voltage for each pixel may be adjusted in the PDA based on the respective breakdown voltage to enable each pixel to operate in an armed state, thereby enabling the detection of incoming photons. According to some aspects, a reverse bias may be adjusted, from a bias source that supplies a reverse bias to each pixel in the PDA (e.g., disarm voltage) to a predetermined arming bias value (e.g., a voltage above the nominal breakdown voltage for the respective pixel of the PDA) to arm each pixel and a predetermined disarming bias value to disarm each pixel. In this regard, adjusting the reverse bias may be performed by arm/disarm control circuitto a value above the breakdown voltage value stored in the memory for each pixel of the PDA in order to arm each pixel of the PDA.

According to some aspects, the reverse bias may be further adjusted to a value below the breakdown voltage value stored in the memory for each pixel of the PDA in order to disarm each pixel of the PDA. It can be appreciated that in view of the inconsistencies of the performance variations of the PDA due to the fabrication processes, the stored performance characteristics for one pixel in the PDA may be different from stored performance characteristics for another pixel in the PDA (e.g., pixels may have different breakdown voltage characteristics).

It is to be appreciated that the detailed description section, and not any other section, is intended to be used to interpret the claims. Other sections can set forth one or more but not all exemplary aspects as contemplated by the inventor(s), and thus, are not intended to limit this disclosure or the appended claims in any way.

1 5 FIGS.- For example, according to some aspects described with reference to, an optical processing apparatus is disclosed. According to some aspects, the apparatus comprises a pixelated photodiode array (PDA), wherein each pixel in the PDA includes a radiation detector; a memory configured to store one or more characteristics for each pixel in the PDA, and a read out integrated circuit (ROIC) communicatively coupled to the PDA and the memory. According to some aspects, the ROIC being configured to read, from the memory, the one or more characteristics for each pixel in the PDA, and adjust an arm/disarm bias voltage for each pixel in the PDA based on the one or more characteristics.

According to some aspects, each pixel in the PDA comprises one or more Geiger-mode avalanche photodiodes (GmAPDs) wherein the one or more characteristics read from the memory include a breakdown voltage of the one or more GmAPDs. According to some aspects, the ROIC is further configured to: adjust the arm/disarm bias voltage of a pixel upwards in response to the breakdown voltage of the pixel being below a predetermined threshold. According to some aspects, the ROIC is further configured to adjust the arm/disarm bias voltage of a pixel downwards in response to the breakdown voltage of the pixel being above a predetermined threshold. According to some aspects, the ROIC is further configured to adjust the arm/disarm bias voltage for each pixel in the PDA based on the respective breakdown voltage such that each pixel operates in an armed state.

According to some aspects, the apparatus may also include a bias source configured to supply the arm/disarm bias voltage to each pixel of the PDA, wherein the ROIC is further configured to: adjust the arm/disarm bias voltage to a predetermined arming bias value to arm each pixel, and adjust the arm/disarm bias voltage to a predetermined disarming bias value to disarm each pixel. According to some aspects, the ROIC is further configured to adjust the arm/disarm bias voltage to a value above a breakdown voltage value stored in the memory for each pixel of the PDA to arm each pixel of the PDA. According to some aspects, the ROIC is further configured to adjust the arm/disarm bias voltage to a value below the breakdown voltage value stored in the memory for each pixel of the PDA to disarm each pixel of the PDA.

According to some aspects, the one or more characteristics for a first pixel in the PDA are different from the one or more characteristics for a second pixel in the PDA. According to some aspects, the first pixel and the second pixel are configured to operate at the same over bias voltage level after adjustment of the arm/disarm bias voltage.

It can be appreciated that the apparatus comprises a focal plan array (FPA). Moreover, the apparatus can comprise a light detection and ranging sensor (lidar). According to some aspects, the ROIC is configured to adjust the arm/disarm bias voltage for each pixel in the PDA such that each pixel in the PDA operates at the same over bias voltage level.

According to some aspects, an optical processing method is disclosed, the method comprising reading, from a memory by a readout integrated circuit (ROIC), one or more characteristics for each pixel in a pixelated photodiode array (PDA), each pixel in the PDA including a respective radiation detector, wherein the ROIC is communicatively coupled to the PDA and the memory; and adjusting, by the ROIC, an arm/disarm bias voltage for each pixel in the PDA based on the one or more characteristics. According to some aspects, the one or more characteristics read from the memory include a breakdown voltage of the pixel. According to some aspects, the adjusting further comprises adjusting the arm/disarm bias voltage of a pixel upwards in response to the breakdown voltage of the pixel being below a predetermined threshold.

According to some aspects, the adjusting further comprises adjusting the arm/disarm bias voltage of a pixel downwards in response to the breakdown voltage of the pixel being above a predetermined threshold.

According to some aspects, an apparatus, e.g., a read out integrated circuit (ROIC) is disclosed. According to some aspects, the ROIC is communicatively coupled to a pixelated photodiode array (PDA) and a memory configured to store characteristics for each pixel in the PDA, wherein each pixel in the PDA includes a radiation detector. According to some aspects, the ROIC is configured to read from the memory the characteristics for each pixel in the PDA, and adjust an arm/disarm bias voltage for each pixel in the PDA based on a respective characteristic of each pixel. According to some aspects, the one or more characteristics read from the memory include a breakdown voltage for each radiation detector.

While this disclosure describes exemplary aspects for exemplary fields and applications, it should be understood that the disclosure is not limited thereto. Other aspects and modifications thereto are possible, and are within the scope and spirit of this disclosure. For example, and without limiting the generality of this paragraph, aspects are not limited to the software, hardware, firmware, and/or entities illustrated in the figures and/or described herein. Further, aspects (whether or not explicitly described herein) have significant utility to fields and applications beyond the examples described herein.

Aspects have been described herein with the aid of functional building blocks illustrating the implementation of specified functions and relationships thereof. The boundaries of these functional building blocks have been arbitrarily defined herein for the convenience of the description. Alternate boundaries can be defined as long as the specified functions and relationships (or equivalents thereof) are appropriately performed. Also, alternative aspects can perform functional blocks, steps, operations, methods, etc. using orderings different than those described herein.

References herein to “one aspect,” “an aspect,” “an example aspect,” or similar phrases, indicate that the aspect described can include a particular feature, structure, or characteristic, but every aspect can not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same aspect. Further, when a particular feature, structure, or characteristic is described in connection with an aspect, it would be within the knowledge of persons skilled in the relevant art(s) to incorporate such feature, structure, or characteristic into other aspects whether or not explicitly mentioned or described herein. Additionally, some aspects can be described using the expression “coupled” and “connected” along with their derivatives. These terms are not necessarily intended as synonyms for each other. For example, some aspects can be described using the terms “connected” and/or “coupled” to indicate that two or more elements are in direct physical or electrical contact with each other. The term “coupled,” however, can also mean that two or more elements are not in direct contact with each other, but yet still co-operate or interact with each other.

The breadth and scope of this disclosure should not be limited by any of the above-described exemplary aspects, but should be defined only in accordance with the following claims and their equivalents.

It is to be appreciated that the Detailed Description section, and not any other section, is intended to be used to interpret the claims. Other sections can set forth one or more but not all exemplary embodiments as contemplated by the inventor(s), and thus, are not intended to limit this disclosure or the appended claims in any way.

While this disclosure describes exemplary embodiments for exemplary fields and applications, it should be understood that the disclosure is not limited thereto. Other embodiments and modifications thereto are possible, and are within the scope and spirit of this disclosure. For example, and without limiting the generality of this paragraph, embodiments are not limited to the software, hardware, firmware, and/or entities illustrated in the figures and/or described herein. Further, embodiments (whether or not explicitly described herein) have significant utility to fields and applications beyond the examples described herein.

Embodiments have been described herein with the aid of functional building blocks illustrating the implementation of specified functions and relationships thereof. The boundaries of these functional building blocks have been arbitrarily defined herein for the convenience of the description. Alternate boundaries can be defined as long as the specified functions and relationships (or equivalents thereof) are appropriately performed. Also, alternative embodiments can perform functional blocks, steps, operations, methods, etc. using orderings different than those described herein.

References herein to “one embodiment,” “an embodiment,” “an example embodiment,” or similar phrases, indicate that the embodiment described can include a particular feature, structure, or characteristic, but every embodiment can not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it would be within the knowledge of persons skilled in the relevant art(s) to incorporate such feature, structure, or characteristic into other embodiments whether or not explicitly mentioned or described herein. Additionally, some embodiments can be described using the expression “coupled” and “connected” along with their derivatives. These terms are not necessarily intended as synonyms for each other. For example, some embodiments can be described using the terms “connected” and/or “coupled” to indicate that two or more elements are in direct physical or electrical contact with each other. The term “coupled,” however, can also mean that two or more elements are not in direct contact with each other, but yet still co-operate or interact with each other.

The breadth and scope of this disclosure should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.

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Filing Date

December 24, 2025

Publication Date

April 30, 2026

Inventors

Harold HWANG
Matthew T. O'GRADY
Brian Edward PICCIONE
Mark ITZLER

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Cite as: Patentable. “SYSTEMS AND METHODS FOR BREAKDOWN VOLTAGE CORRECTION IN GEIGER-MODE AVALANCHE PHOTODIODE (APD) FOCAL PLANE ARRAYS (FPA)” (US-20260123065-A1). https://patentable.app/patents/US-20260123065-A1

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