Display Apparatus and Method of Manufacturing the Same

This application is a continuation of and claims benefit under 35 U.S.C. § 120 to U.S. application Ser. No. 18/227,965 filed Jul. 30, 2023, which is a continuation of and claims benefit under 35 U.S.C. § 120 to U.S. application Ser. No. 15/895,355 filed Feb. 13, 2018 (now U.S. Pat. No. 11,756,937 issued Sep. 12, 2023), which claims benefit of U.S. Provisional Application No. 62/473,791 filed Mar. 20, 2017, U.S. Provisional Application No. 62/462,567 filed Feb. 23, 2017 and U.S. Provisional Application No. 62/458,100 filed Feb. 13, 2017, the entire contents of each of which are incorporated herein by reference.

Exemplary embodiments of the present invention relate to a display apparatus and a method of manufacturing the same, and, more particularly, to a display apparatus employing a light emitting diode package having a large size as compared with a light emitting diode chip, and a method of manufacturing the same.

A light emitting diode refers to an inorganic semiconductor device that emits light through recombination of electrons and holes. In recent years, light emitting diodes have been used in various fields including displays, automobile lamps, general lighting, and the like. Light emitting diodes have various advantages, such as long lifespan, low power consumption, and rapid response. Thus, a light emitting device using a light emitting diode can be used as a light source in various fields.

Recently, display apparatuses, such as TVs, monitors or electronic display boards, realize colors through a thin film transistor liquid crystal display (TFT-LCD) panel, and employ light emitting diodes as a light source of a backlight unit for emission of the realized colors. In addition, various studies have been conducted to develop a display apparatus capable of realizing colors through light emitting diodes instead of using a separate LCD.

In order to use light emitting diodes as a light source of a backlight unit or for direct realization of colors, one light emitting diode may be provided for each pixel. Here, in order to control each of the light emitting diodes, an active matrix (AM) drive type or a passive matrix (PM) drive type may be employed. For the AM drive type, the luminous area of each light emitting diode is 1/10,000 of the area of one pixel, and for the PM drive type, the luminous area of each light emitting diode is 1/100 of the area of one pixel.

However, light emitting diodes having an excessively large luminous area have a problem of low current density, causing deterioration in luminous efficacy. On the contrary, light emitting diodes having a small luminous area provide difficulty in mounting and replacement of a number of light emitting diodes due to a small size thereof.

The above information disclosed in this Background section is only for understanding of the background of the inventive concepts, and, therefore, it may contain information that does not constitute prior art.

Exemplary embodiments of the present invention provide a display apparatus including a light emitting diode package, which employs light emitting diodes having a small luminous area as compared with the area of a pixel in order to increase yield in mounting and repair of the light emitting diodes, and a method of manufacturing the same.

Additional features of the inventive concepts will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the inventive concepts.

In accordance with an exemplary embodiment of the present invention, a display apparatus includes: a circuit board; and a plurality of pixels formed on the circuit board, wherein at least one of a blue light emitting diode chip, a red light emitting diode part, and a green light emitting diode chip is disposed in each of the pixels, and the blue light emitting diode chip, the red light emitting diode part and the green light emitting diode chip are covered by a coupling structure.

The display apparatus may further include: a substrate on which the blue light emitting diode chip, the red light emitting diode part and the green light emitting diode chip are disposed; and a plurality of first substrate electrodes and a plurality of second substrate electrodes disposed on the substrate and each electrically connected to each of the blue light emitting diode chip, the red light emitting diode part and the green light emitting diode chip, the plurality of first substrate electrodes and the plurality of second substrate electrodes being electrically insulated from each other, wherein the coupling structure is disposed on the substrate.

The red light emitting diode part may be a red light emitting diode chip.

The red light emitting diode part may include: a blue light emitting diode chip or a UV light emitting diode chip disposed on the substrate; an insulating portion covering the blue or UV light emitting diode chip and containing at least one type of phosphor emitting red light through wavelength conversion of light emitted from the blue light emitting diode chip or the UV light emitting diode chip; and a color filter blocking blue light or UV light among light discharged through the insulating portion.

Each of the first substrate electrodes and each of the plural second substrate electrodes may be disposed on upper and lower surfaces of the substrate through via-holes formed in the substrate.

The first substrate electrodes and the plural second substrate electrodes are electrically connected to the circuit board.

The circuit board may have a circuit configured to allow the first substrate electrodes to be electrically connected as individual electrodes to the blue light emitting diode chip, the red light emitting diode part and the green light emitting diode chip, respectively, and to allow the second substrate electrodes to be electrically connected as common electrodes to the blue light emitting diode chip, the red light emitting diode part and the green light emitting diode chip, respectively.

The display apparatus may further include a reflective portion disposed to surround a side surface of the coupling structure and reflecting light emitted through the coupling structure.

At least one of the blue light emitting diode chip and the green light emitting diode chip may include: a light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers; and a first electrode electrically connected to the first conductivity type semiconductor layer.

At least one of the blue light emitting diode chip and the green light emitting diode chip may further include, a second electrode electrically connected to the second conductivity type semiconductor layer, the first and second electrodes may be arranged in one direction of the light emitting structure, and the first electrode may be electrically connected to an exposed region of the first conductivity type semiconductor layer formed by partially removing the active layer and the second conductivity type semiconductor layer.

At least one of the blue light emitting diode chip and the green light emitting diode chip may further include: an encapsulation portion disposed to cover the first and second electrodes and the light emitting structure while insulating the first and second electrodes from each other; a first bump electrically connected to the first electrode; and a second bump electrically connected to the second electrode, and the first and second bumps may be electrically connected to the first and second electrodes through the encapsulation portion, respectively.

At least one of the blue light emitting diode chip and the green light emitting diode chip may have a width smaller than the substrate.

The coupling structure may include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), a ceramic material, an epoxy resin, and a synthetic resin.

In accordance with another exemplary embodiment of the present invention, a method of manufacturing a display apparatus may include: forming a plurality of light emitting diode chips on a first manufacturing substrate; coupling at least some of the light emitting diode chips to a substrate comprising first and second substrate electrodes and provided to a second manufacturing substrate, followed by removing the first manufacturing substrate; forming an insulating portion to cover the plurality of light emitting diode chips; coupling a third manufacturing substrate to an upper surface of the insulating portion, followed by removing the second manufacturing substrate; forming a plurality of light emitting diode packages by removing the insulating portion with reference to the plurality of light emitting diode chips; and transferring some of the light emitting diode packages from the third manufacturing substrate to a printed circuit board.

Forming the plurality of light emitting diode chips may include: forming a plurality of light emitting structures on the first manufacturing substrate, each of the light emitting structures comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers; forming an encapsulation portion to cover the plurality of light emitting structures and forming first and second bumps on the encapsulation portion to be electrically connected to the first and second conductivity type semiconductor layers, respectively; forming a first manufacturing insulating portion to cover the encapsulation portion and the first and second bumps; and exposing the first and second bumps through the encapsulation portion, and coupling at least some of the light emitting diode chips to the substrate comprises electrically coupling the first and second bumps to the first and second substrate electrodes.

The first and second conductivity type semiconductor layers may be exposed in one direction, first and second electrodes are formed on the first and second conductivity type semiconductor layers, respectively, and the first and second bumps may be formed to be electrically connected to the first and second electrodes through the encapsulation portion, respectively.

In coupling the third manufacturing substrate to the upper surface of the insulating portion, at least one buffer layer may be formed between the insulating portion and the third manufacturing substrate.

The insulating portion may include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material.

According to exemplary embodiments, the light emitting diode chip can have a high current density, despite a small amount of current being supplied to the light emitting diode chip through reduction in luminous area.

In addition, even with the light emitting diode chip having a small luminous area, the light emitting diode package has a large size as compared with the light emitting diode chip, thereby improving yield in manufacture and replacement of a display apparatus for repair.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various exemplary embodiments of the invention. As used herein, “embodiments” are non-limiting examples of devices or methods employing one or more of the inventive concepts disclosed herein. It is apparent, however, that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring various exemplary embodiments. Further, various exemplary embodiments may be different, but do not have to be exclusive. For example, specific shapes, configurations, and characteristics of an exemplary embodiment may be used or implemented in another exemplary embodiment without departing from the inventive concepts.

When an element, such as a layer, is referred to as being “on,” “connected to,” or “coupled to” another element or layer, it may be directly on, connected to, or coupled to the other element or layer or intervening elements or layers may be present. When, however, an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present. To this end, the term “connected” may refer to physical, electrical, and/or fluid connection, with or without intervening elements. Further, the D1-axis, the D2-axis, and the D3-axis are not limited to three axes of a rectangular coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense. For example, the D1-axis, the D2-axis, and the D3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. For the purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be construed as X only, Y only, Z only, or any combination of two or more of X, Y, and Z, such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

Although the terms “first,” “second,” etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Thus, a first element discussed below could be termed a second element without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,” “above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), and the like, may be used herein for descriptive purposes, and, thereby, to describe one elements relationship to another element(s) as illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of an apparatus in use, operation, and/or manufacture in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawings is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and, as such, the spatially relative descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms, “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. Moreover, the terms “comprises,” “comprising,” “includes,” and/or “including,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It is also noted that, as used herein, the terms “substantially,” “about,” and other similar terms, are used as terms of approximation and not as terms of degree, and, as such, are utilized to account for inherent deviations in measured, calculated, and/or provided values that would be recognized by one of ordinary skill in the art.

Various exemplary embodiments are described herein with reference to sectional and/or exploded illustrations that are schematic illustrations of idealized exemplary embodiments and/or intermediate structures. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments disclosed herein should not necessarily be construed as limited to the particular illustrated shapes of regions, but are to include deviations in shapes that result from, for instance, manufacturing. In this manner, regions illustrated in the drawings may be schematic in nature and the shapes of these regions may not reflect actual shapes of regions of a device and, as such, are not necessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is a part. Terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense, unless expressly so defined herein.

Exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 FIG. is a sectional view of part of a display apparatus according to a first exemplary embodiment.

1 FIG. 100 102 104 106 200 102 104 106 100 Referring to, the display apparatusincludes a blue light emitting diode part, a red light emitting diode part, a green light emitting diode part, and a printed circuit board. In this way, the blue light emitting diode part, the red light emitting diode part, and the green light emitting diode partmay be provided as a group to one pixel of the display apparatus.

102 122 122 106 126 126 104 122 122 104 104 The blue light emitting diode partemploys a blue light emitting diode chipto discharge blue light emitted from the blue light emitting diode chipto the outside, and the green light emitting diode partemploys a green light emitting diode chipto discharge green light emitted from the green light emitting diode chipto the outside. The red light emitting diode partemploys the blue light emitting diode chipto discharge red light through wavelength conversion of blue light emitted from the blue light emitting diode chip. Although the red light emitting diode partis configured to perform wavelength conversion in this exemplary embodiment, the red light emitting diode partmay employ a red light emitting diode chip to discharge red light emitted from the red light emitting diode chip, as needed.

102 102 110 122 132 134 140 This exemplary embodiment will be described mainly with reference to the blue light emitting diode part. The blue light emitting diode partmay include a substrate, the blue light emitting diode chip, a first substrate electrode, a second substrate electrode, and an insulating portion.

110 110 The substrateserves to support the light emitting diode package and the light emitting diode chip. In this exemplary embodiment, the substratemay be formed of an insulating material and have a predetermined thickness.

122 110 122 29 31 33 35 37 39 29 23 25 27 1 FIG. The blue light emitting diode chipis disposed on the substrateand may emit light upon receiving power from an external power source. As shown in, the blue light emitting diode chipincludes a light emitting structure, an n-type electrode, a p-type electrode, an n-type bump, a p-type bump, and an encapsulation portion. The light emitting structuremay include an n-type semiconductor layer, an active layer, and a p-type semiconductor layer.

23 25 27 23 25 27 23 27 Each of the n-type semiconductor layer, the active layerand the p-type semiconductor layermay include Group III-V based compound semiconductors. By way of example, each of the n-type semiconductor layer, the active layerand the p-type semiconductor layermay include nitride semiconductors such as (Al, Ga, In)N. The n-type semiconductor layermay be interchangeably placed with the p-type semiconductor layer.

23 27 25 23 27 25 The n-type semiconductor layermay be a conductive semiconductor layer containing n-type dopants (for example, Si), and the p-type semiconductor layermay be a conductive semiconductor layer containing p-type dopants (for example, Mg). The active layeris interposed between the n-type semiconductor layerand the p-type semiconductor layer, and may include a multi-quantum well (MQW) structure. The composition of the active layermay be determined to emit light having a desired peak wavelength.

25 122 106 126 25 126 104 25 In this exemplary embodiment, the composition of the active layermay be determined such that the blue light emitting diode chipcan emit light having a peak wavelength in the blue wavelength band. In addition, in the structure wherein the green light emitting diode partemploys the green light emitting diode chip, the composition of the active layermay be determined such that the green light emitting diode chipcan emit light having a peak wavelength in the green wavelength band. Further, in the structure wherein the red light emitting diode partemploys the red light emitting diode chip, the composition of the active layermay be determined such that the red light emitting diode chip can emit light having a peak wavelength in the red wavelength band.

29 122 126 29 The light emitting structureof the blue light emitting diode chipor the green light emitting diode chipmay be an AlInGaN-based nitride semiconductor, and the light emitting structureof the red light emitting diode chip may be an AlGaInP-based nitride semiconductor.

1 FIG. 29 25 23 27 23 27 25 Referring to, in the light emitting structureaccording to this exemplary embodiment, the active layerand the n-type semiconductor layerare sequentially disposed on the p-type semiconductor layerin the stated order. In addition, a portion of the n-type semiconductor layermay be exposed by partially removing the p-type semiconductor layerand the active layer.

33 27 27 31 23 23 122 31 33 The p-type electrodeis disposed on a lower surface of the p-type semiconductor layerto be electrically connected to the p-type semiconductor layer. In addition, the n-type electrodeis disposed on the exposed portion of the n-type semiconductor layerto be electrically connected to the n-type semiconductor layer. That is, in this exemplary embodiment, the blue light emitting diode chipmay have a horizontal structure in which the n-type electrodeand the p-type electrodeare arranged in the same direction.

39 29 31 33 29 39 29 31 33 39 39 39 29 The encapsulation portionmay be disposed on the lower surface of the light emitting structureto cover the n-type electrode, the p-type electrodeand the light emitting structure. The encapsulation portionexhibits electrically insulating properties and can protect the light emitting structure, the n-type electrodeand the p-type electrodefrom external environments. In this exemplary embodiment, the encapsulation portionmay be formed of a transparent material. Alternatively, the encapsulation portionmay be formed of an opaque material or a translucent material, as needed. Here, the encapsulation portionmay have the same width as the light emitting structure.

35 37 39 35 31 37 33 39 35 37 39 Each of the n-type bumpand the p-type bumpmay be disposed to cover a portion of a lower surface of the encapsulation portion. In addition, the n-type bumpmay be electrically connected to the n-type electrodeand the p-type bumpmay be electrically connected to the p-type electrodethrough via-holes formed in the encapsulation portion. The n-type bumpand the p-type bumpare spaced apart from each other on the lower surface of the encapsulation portionto be electrically insulated from each other.

132 134 110 132 110 110 132 110 132 110 132 110 132 134 110 110 132 134 The first substrate electrodeand the second substrate electrodeare provided to the substrate. The first substrate electrodeextends from an upper surface of the substrateto a lower surface thereof through the substrate. That is, a portion of the first substrate electrodeis disposed on the upper surface of the substrateand another portion of the first substrate electrodeis disposed on the lower surface of the substratesuch that both portions of the first substrate electrodeare electrically connected to each other through a via-hole formed in the substrate. Like the first substrate electrode, portions of the second substrate electrodeare disposed on the upper and lower surfaces of the substrate, respectively, and are electrically connected to each other through a via-hole formed in the substrate. In this exemplary embodiment, the first substrate electrodemay be spaced apart from the second substrate electrodeto be electrically insulated from each other.

132 134 110 35 37 110 35 37 132 134 The portions of the first substrate electrodeand the second substrate electrodedisposed on the upper surface of the substratemay be electrically connected to the n-type bumpand the p-type bumpof the light emitting diode chip, and may be electrically bonded thereto by a bonding portion S. That is, the light emitting diode chip is disposed on the substratesuch that the n-type bumpand the p-type bumpdisposed on the lower surface of the light emitting diode chip are electrically connected to the first substrate electrodeand the second substrate electrode, respectively.

140 110 140 29 140 140 The insulating portionmay be disposed to cover the light emitting diode chip and the upper surface of the substrate. The insulating portionserves to protect the light emitting structureof the light emitting diode chip from external environments and to prevent an electrical short-circuit due to foreign matter. In this exemplary embodiment, the insulating portionmay be formed of a transparent material or a translucent material to allow light emitted from the light emitting diode chip to be discharged outside therethrough. For example, the insulating portionmay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material.

102 104 106 200 102 104 106 200 102 104 106 The blue light emitting diode part, the red light emitting diode part, and the green light emitting diode partare arranged on an upper surface of the printed circuit board, which supports the blue light emitting diode part, the red light emitting diode part, and the green light emitting diode part. The printed circuit boardmay include a plurality of interconnection wires to supply electric power from an external power source to each of the blue light emitting diode part, the red light emitting diode part, and the green light emitting diode part.

1 FIG. 200 102 104 106 134 132 102 104 106 200 In addition, as shown in, the printed circuit boardincludes electrodes such that, in each of the blue light emitting diode part, the red light emitting diode part, and the green light emitting diode part, second substrate electrodesare connected as common electrodes and first substrate electrodesare connected as individual electrodes. With this structure, the blue light emitting diode part, the red light emitting diode part, and the green light emitting diode partdisposed on the printed circuit boardcan be independently driven.

2 2 FIGS.A-L show sectional views illustrating a method of manufacturing the display apparatus according to the first exemplary embodiment.

100 102 104 106 102 2 2 FIGS.A-L The method of manufacturing the display apparatusaccording to the first exemplary embodiment will be described with reference to. The following description will focus on the method of manufacturing the blue light emitting diode part, and description of methods of manufacturing the red light emitting diode part, and the green light emitting diode partwill be omitted since these manufacturing methods are the same as the method of manufacturing the blue light emitting diode part.

2 FIG.A 1 FIG. 2 FIG.A 29 51 29 23 25 27 23 25 27 31 23 33 27 29 51 110 51 Referring to, a plurality of light emitting structuresis disposed on a first manufacturing substrate. In this exemplary embodiment, each of the light emitting structuresshown in the enlarged portion ofincludes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, which are sequentially stacked in the stated order, and an upper surface of the n-type semiconductor layeris partially exposed by partially removing the active layerand the p-type semiconductor layer. In addition, as shown in, an n-type electrodeis disposed in an exposed region of the upper surface of the n-type semiconductor layerand a p-type electrodeis disposed on an upper surface of the p-type semiconductor layer. The light emitting structuresare spaced apart from one another on the first manufacturing substrate. Like the substrate, the first manufacturing substratemay be formed of an insulating material and may have a predetermined thickness.

2 FIG.B 29 51 39 51 29 35 37 39 35 31 31 37 33 33 Referring to, with the plurality of light emitting structuresdisposed on the first manufacturing substrate, an encapsulation portionis formed to cover the first manufacturing substrateand the plurality of light emitting structures, and an n-type bumpand a p-type bumpare formed through via-holes formed in the encapsulation portion. The n-type bumpis disposed on the n-type electrodeto be electrically connected to the n-type electrode, and the p-type bumpis disposed on the p-type electrodeto be electrically connected to the p-type electrode.

2 FIG.C 2 FIG.C 53 35 37 39 53 53 29 Referring to, a first manufacturing insulating portionis formed to cover the n-type bump, the p-type bump, and the encapsulation portion. The first manufacturing insulating portionmay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material. Here, the first manufacturing insulating portionmay be formed to have a flat upper surface by filling a space between the light emitting structures, as shown in.

2 FIG.D 35 37 53 53 35 37 Then, referring to, the n-type bumpand the p-type bumpare exposed by etching, for example, dry etching, the first manufacturing insulating portion. Here, the first manufacturing insulating portionmay be subjected to etching such that upper surfaces of the n-type bumpand the p-type bumpcan be exposed.

35 37 29 122 110 55 122 110 110 55 132 134 122 132 134 2 FIG.E With the n-type bumpand the p-type bumpexposed, the light emitting structuresare isolated from one another to form blue light emitting diode chips, which in turn are mounted on the substrateon a second manufacturing substrate.shows a structure wherein plural blue light emitting diode chipsare disposed on the substrate. Here, the substrateis disposed on the second manufacturing substrateand includes first substrate electrodesand second substrate electrodes. Each of the blue light emitting diode chipsis electrically connected to the first substrate electrodeand the second substrate electrodeby a bonding portion S.

2 FIG.F 2 FIG.F 122 110 140 110 122 140 140 122 Referring to, with the plural blue light emitting diode chipsdisposed on the substrate, an insulating portionis formed to cover the substrateand the plural blue light emitting diode chips. The insulating portionmay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material. The insulating portionmay be formed to have a flat upper surface by filling a space between the blue light emitting diode chip, as shown in.

2 FIG.G 57 57 57 140 57 51 55 57 57 57 57 57 57 b a a b a a b Referring to, a second buffer layer, a third buffer layer, and a third manufacturing substrateare sequentially formed on the upper surface of the insulating portion. The third manufacturing substratemay be formed of an insulating material and may have a predetermined thickness, like the first manufacturing substrateand the second manufacturing substrate. The third buffer layeris disposed under the third manufacturing substrateand the second buffer layeris disposed under the third buffer layer. The third buffer layermay include, for example, ITO and the second buffer layermay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material.

57 57 140 57 57 a b Here, the third buffer layerand the second buffer layerare provided to prevent damage to the insulating portioncoupled to a lower surface of the third manufacturing substrateupon removal of the third manufacturing substrate.

2 FIG.H 57 55 55 110 132 134 Referring to, after the third manufacturing substrateis coupled to an upper surface of the third buffer layer, the second manufacturing substrateis removed from the lower surface of the substrate. The second manufacturing substrateis removed from the lower surface of the substrateso as not to prevent damage to the first substrate electrodesand the second substrate electrodes.

2 FIG.I 122 57 57 57 a b Referring to, the plural blue light emitting diode chipsare isolated from each other by a dicing process in which a region between the blue light emitting diode chips is removed. Here, the third manufacturing substrateis not subjected to dicing and the third buffer layer, or the second buffer layermay be partially removed.

102 57 1 102 2 102 1 102 2 102 102 102 2 FIG.I 2 FIG.J As a result, the plurality of blue light emitting diode partsmay be arranged at regular intervals on a lower surface of the third manufacturing substrate. Here, a width Lof each of the blue light emitting diode partsmay be several times less than a distance Lbetween the blue light emitting diode parts. For example, the width Lof each of the blue light emitting diode partsmay be 150 μm and the distance Lbetween the blue light emitting diode partsmay be 375 μm or more. Althoughshows the structure wherein the distance between the blue light emitting diode partsis small, the blue light emitting diode partsmay be arranged at relatively wide intervals, as shown in.

2 FIG.J 102 57 200 57 57 102 200 200 Referring to, the plural blue light emitting diode partscoupled to the third manufacturing substratemay be transferred to an upper surface of a printed circuit board. To this end, force may be applied to the third manufacturing substratefrom above the third manufacturing substratesuch that each of the blue light emitting diode partscan be coupled to the printed circuit board. Here, a bonding portion S may be applied to the printed circuit board.

2 FIG.K 102 200 200 132 134 102 Referring to, the blue light emitting diode partsmay be coupled to the upper surface of the printed circuit boardby the bonding portion S such that interconnection wires of the printed circuit boardcan be electrically connected to the first substrate electrodeand the second substrate electrodeof each of the blue light emitting diode parts.

2 FIG.L 100 104 106 200 Referring to, the display apparatusmay be manufactured by coupling red light emitting diode partsand green light emitting diode partsto the printed circuit boardthrough the processes described above.

3 FIG. is a sectional view of part of a display apparatus according to a second exemplary embodiment.

3 FIG. 100 102 104 106 200 Referring to, the display apparatusincludes a blue light emitting diode part, a red light emitting diode part, a green light emitting diode part, and a printed circuit board.

102 122 122 106 126 126 104 122 122 104 104 As in the first exemplary embodiment, the blue light emitting diode partaccording to this exemplary embodiment employs a blue light emitting diode chipto discharge blue light emitted from the blue light emitting diode chipto the outside, and the green light emitting diode partemploys a green light emitting diode chipto discharge green light emitted from the green light emitting diode chipto the outside. The red light emitting diode partemploys the blue light emitting diode chipto discharge red light through wavelength conversion of blue light emitted from the blue light emitting diode chip. Although the red light emitting diode partis configured to perform wavelength conversion in this exemplary embodiment, the red light emitting diode partmay employ a red light emitting diode chip to discharge red light emitted from the red light emitting diode chip, as needed.

102 122 132 134 140 180 In this exemplary embodiment, the blue light emitting diode partincludes the blue light emitting diode chip, a first substrate electrode, a second substrate electrode, an insulating portion, and a connection electrode.

3 FIG. 122 29 33 29 23 25 27 As shown in, the blue light emitting diode chiphas a vertical structure and may include a light emitting structureand a p-type electrode. Here, the light emitting structuremay include an n-type semiconductor layer, an active layer, and a p-type semiconductor layer.

29 27 23 25 27 23 31 23 31 The light emitting structureincludes a p-type semiconductor layerdisposed at a lower side thereof, an n-type semiconductor layerdisposed at an upper surface thereof, and an active layerinterposed between the p-type semiconductor layerand the n-type semiconductor layer. Although an n-type electrodemay be disposed on an upper surface of the n-type semiconductor layer, description of the n-type electrodeis omitted in this exemplary embodiment.

33 27 33 33 33 33 33 33 33 33 33 33 33 a b c a b c a a b c The p-type electrodeis disposed on a lower surface of the p-type semiconductor layerand includes first to third electrode portions,,. The first electrode portionelectrically contacts the p-type electrode, and the second electrode portionand the third electrode portionare sequentially disposed on a lower surface of the first electrode portion. In this exemplary embodiment, the first electrode portionmay include gold (Au), the second electrode portionmay include aluminum (Al), and the third electrode portionmay include silver (Ag).

33 33 33 33 33 33 a b c 3 FIG. Although the p-type electrodeaccording to this exemplary embodiment has a multilayer structure including the first to third electrode portions,,, the p-type electrodemay have a monolayer structure, as needed, and the p-type electrodemay have a thinner thickness than that shown in.

29 132 33 29 132 33 132 In this exemplary embodiment, the light emitting structureis disposed on the first substrate electrodeand the p-type electrodeof the light emitting structureis electrically connected to the first substrate electrode. Here, the p-type electrodemay be coupled to the first substrate electrodeby a bonding portion S.

180 23 180 23 134 122 In addition, the connection electrodeis disposed to cover the upper surface of the n-type semiconductor layer. The connection electrodeelectrically connects the n-type semiconductor layerto the second substrate electrodeand may include a transparent material, for example, ITO or ZnO, to allow light emitted from the blue light emitting diode chipto pass therethrough.

132 134 122 132 33 134 23 180 The first substrate electrodeand the second substrate electrodeare disposed under the blue light emitting diode chipand are spaced apart from each other so as to be electrically insulated from each other. As described above, the first substrate electrodeis electrically connected to the p-type electrodeand the second substrate electrodeis electrically connected to the n-type semiconductor layerthrough the connection electrode.

140 122 140 122 180 140 122 140 The insulating portionis disposed to cover the blue light emitting diode chip. The insulating portionserves to protect the blue light emitting diode chipand the connection electrodefrom the external environment and to prevent an electrical short-circuit due to foreign matter. In this exemplary embodiment, the insulating portionmay be formed of a transparent material or a translucent material to allow light emitted from the blue light emitting diode chipto be discharged outside therethrough. For example, the insulating portionmay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material.

61 122 180 61 140 140 100 61 140 140 180 102 61 140 Further, in this exemplary embodiment, a second manufacturing insulating portionis disposed between the blue light emitting diode chipand the connection electrode. The second manufacturing insulating portionis formed prior to the insulating portionby a different process from the process of forming the insulating portionin manufacture of the display apparatusaccording to this exemplary embodiment. The second manufacturing insulating portionis formed of the same material as the insulating portionand may contact the insulating portionexcluding a region in which the connection electrodeis disposed. That is, in the blue light emitting diode partaccording to this exemplary embodiment, the second manufacturing insulating portionmay have the same structure as the insulating portion.

102 104 106 200 102 104 106 200 102 104 106 The blue light emitting diode part, the red light emitting diode partand the green light emitting diode partare arranged on an upper surface of the printed circuit board, which supports the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part. In addition, the printed circuit boardmay include a plurality of interconnection wires to supply electric power from an external power source to the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part.

4 FIG.A 4 FIG.S -show sectional views illustrating a method of manufacturing the display apparatus according to the second exemplary embodiment of the present invention.

100 102 104 106 102 4 FIG.A 4 FIG.S The method of manufacturing the display apparatusaccording to the second exemplary embodiment will be described with reference to-. The following description will focus on the method of manufacturing the blue light emitting diode part, and description of methods of manufacturing the red light emitting diode partand the green light emitting diode partwill be omitted since these manufacturing methods are the same as the method of manufacturing the blue light emitting diode part.

4 FIG.A 23 25 27 51 Referring to, an n-type semiconductor layer, an active layerand a p-type semiconductor layerare sequentially stacked on a first manufacturing substrate.

4 FIG.B 33 23 25 27 33 33 33 33 33 27 33 a b c d Referring to, a plurality of p-type electrodesare formed on the stacked structure of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Here, each of the p-type electrodesincludes first to fourth electrode portions,,,, which are sequentially stacked on an upper surface of the p-type semiconductor layer. The p-type electrodesare regularly arranged at constant intervals in rows and columns.

33 33 33 33 a b c d The first electrode portionmay include gold (Au), the second electrode portionmay include aluminum (Al), the third electrode portionmay include silver (Ag), and the fourth electrode portionmay include chromium (Cr).

4 FIG.C 29 33 23 25 27 33 29 33 Referring to, a plurality of light emitting structureseach having the same width as the p-type electrodeis formed by etching the n-type semiconductor layer, the active layerand the p-type semiconductor layerwith reference to each of the p-type electrodes. That is, the plurality of light emitting structuresare disposed under the p-type electrodes, respectively.

29 53 51 29 33 53 29 53 53 4 FIG.D After the plurality of light emitting structuresare formed, a first manufacturing insulating portionis formed on the first manufacturing substrateto cover the plurality of light emitting structuresand the p-type electrode, as shown in. The first manufacturing insulating portionis formed to have a flat upper surface by filling a space between the light emitting structures. The first manufacturing insulating portionmay be formed of a transparent material or a translucent material. For example, the first manufacturing insulating portionmay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material.

4 FIG.E 33 53 53 53 33 33 d c d Referring to, the fourth electrode portionsare exposed on the first manufacturing insulating portionby etching an upper portion of the first manufacturing insulating portion. Etching of the first manufacturing insulating portionmay be performed by dry etching until the third electrode portionsare exposed. Thereafter, the fourth electrode portionsare removed by separate etching.

4 FIG.F 51 33 132 132 134 55 55 55 55 55 55 c a b a b 2 Next, referring to, the first manufacturing substrateis turned upside down to couple the third electrode portionsto first substrate electrodes. Here, the first substrate electrodesand second substrate electrodesare disposed on the second manufacturing substrate, and a first substrate buffer layerand a second substrate buffer layermay be formed on the second manufacturing substrate. The first substrate buffer layermay be formed of ITO and the second substrate buffer layermay be formed of SiO.

51 55 55 51 55 b That is, the first manufacturing substrateand the second manufacturing substrateare disposed on the second substrate buffer layer. Here, the first manufacturing substrateand the second manufacturing substratemay be spaced apart from each other.

132 51 33 51 55 Then, a bonding portion S is formed on the first substrate electrodes. Thus, when the first manufacturing substrateis compressed downward, the p-type electrodescan be coupled to the first manufacturing substrateon which the bonding portion S is formed, while contacting the second manufacturing substrateon which the bonding portion S is not formed.

122 132 122 53 51 4 FIG.G As a result, blue light emitting diode chipsare formed on the first substrate electrodes, as shown in. That is, the blue light emitting diode chipsmay be separated from the first manufacturing insulating portionand coupled to the upper surface of the first manufacturing substrate.

4 FIG.H 59 134 59 122 59 Referring to, a shielding portionis formed on the second substrate electrodes. The shielding portionmay be formed to have a greater height than the blue light emitting diode chips. The shielding portionmay be formed of a transparent or opaque material and may exhibit electrically insulating or conductive properties.

4 FIG.I 61 55 122 59 61 53 61 132 134 61 132 134 132 134 Referring to, a second manufacturing insulating portionis formed on the second manufacturing substrateto cover the blue light emitting diode chipsand the shielding portion. The second manufacturing insulating portionmay be formed of the same material as the first manufacturing insulating portion. The second manufacturing insulating portionmay be formed to fill spaces between the first substrate electrodesand the second substrate electrodes. With this structure, the second manufacturing insulating portionis interposed between the first substrate electrodesand the second substrate electrodessuch that the first substrate electrodesand the second substrate electrodescan be electrically insulated from each other while being coupled to each other instead of being separated from each other.

4 FIG.J 23 122 61 59 61 59 61 59 23 61 Referring to, the n-type semiconductor layerof the blue light emitting diode chipis partially exposed by etching the second manufacturing insulating portionand the shielding portion. Here, the second manufacturing insulating portionand the shielding portionmay be etched such that upper surfaces of the second manufacturing insulating portionand the shielding portionare flush with each other, and the n-type semiconductor layermay protrude from the upper surface of the second manufacturing insulating portion.

59 180 180 23 61 180 61 134 180 134 180 23 122 4 FIG.K 4 FIG.L Next, the shielding portionis removed by lift-off, as shown in, and a connection electrodeis formed as shown in. The connection electrodemay be formed of a transparent material, for example, ITO or ZnO, and cover the n-type semiconductor layerexposed on the upper surface of the second manufacturing insulating portionto be electrically connected thereto. In addition, the connection electrodeextends along the upper and side surfaces of the second manufacturing insulating portionto an upper surface of the second substrate electrode. With this structure, the connection electrodecan be electrically connected to the second substrate electrode. In addition, the connection electrodeextends to cover the n-type semiconductor layerof adjacent blue light emitting diode chips.

180 140 180 61 140 61 140 4 FIG.M After the connection electrodeis formed as described above, an insulating portionis formed to cover the connection electrodeand the second manufacturing insulating portion, as shown in. The insulating portionmay be formed of the same transparent or translucent material as the second manufacturing insulating portion. The insulating portionmay be formed to have a flat upper surface.

4 FIG.N 57 140 57 57 140 57 a a Referring to, a third manufacturing substrateis coupled to an upper portion of the insulating portion. Here, a third buffer layermay be formed between the third manufacturing substrateand the insulating portion. The third buffer layermay be formed of ITO.

4 FIG.O 57 140 55 55 55 132 134 61 55 a b Referring to, after the third manufacturing substrateis coupled to the insulating portion, the second manufacturing substrateis removed from the lower surface of the substrate. The first substrate buffer layerand the second substrate buffer layercan prevent damage to the first substrate electrode, the second substrate electrodeand the second manufacturing insulating portionupon removal of the second manufacturing substrate.

4 FIG.P 122 122 134 102 57 Referring to, the plural blue light emitting diode chipsare isolated from each other. Here, isolation of the blue light emitting diode chipsis performed with reference to a central region of the second substrate electrode. As a result, the plural blue light emitting diode partsare arranged on a lower surface of the third manufacturing substrate.

3 102 4 102 3 102 4 102 102 102 4 FIG.P 4 FIG.Q In this exemplary embodiment, a width Lof each of the blue light emitting diode partsmay be several times less than a distance Lbetween the blue light emitting diode parts. For example, the width Lof each of the blue light emitting diode partsmay be 20 μm and the distance Lbetween the blue light emitting diode partsmay be 100 μm or more. Althoughshows the structure wherein the distance between the blue light emitting diode partsis small, the blue light emitting diode partsmay be arranged at wide intervals, as shown in.

4 FIG.Q 102 57 200 57 57 102 200 200 Referring to, the plural blue light emitting diode partscoupled to the third manufacturing substratemay be transferred to an upper surface of a printed circuit board. To this end, force may be applied to the third manufacturing substratefrom above the third manufacturing substratesuch that each of the blue light emitting diode partscan be coupled to the printed circuit board. Here, a bonding portion S may be applied to the printed circuit board.

4 FIG.R 102 200 200 132 134 102 Referring to, the blue light emitting diode partsmay be coupled to the upper surface of the printed circuit boardby the bonding portion S such that interconnection wires of the printed circuit boardcan be electrically connected to the first substrate electrodeand the second substrate electrodeof each of the blue light emitting diode parts.

4 FIG.S 100 104 106 200 Referring to, the display apparatusmay be manufactured by coupling red light emitting diode partsand green light emitting diode partsto the printed circuit boardthrough the processes described above.

5 FIG. is a sectional view of part of a display apparatus according to a third exemplary embodiment.

5 FIG. 100 102 104 106 200 Referring to, the display apparatusincludes a blue light emitting diode part, a red light emitting diode part, a green light emitting diode part, and a circuit board.

102 110 122 132 134 140 The blue light emitting diode partincludes a substrate, a blue light emitting diode chip, a first substrate electrode, a second substrate electrode, and an insulating portion.

110 100 120 110 The substratesupports the blue light emitting diode packageand the light emitting diode chip. In this exemplary embodiment, the substratemay include an insulating material and have a predetermined thickness.

122 110 122 29 31 33 35 37 39 29 23 25 27 5 FIG. The blue light emitting diode chipis disposed on the substrateand may emit light upon receiving power from an external power source. As shown in, the blue light emitting diode chipincludes a light emitting structure, an n-type electrode, a p-type electrode, an n-type bump, a p-type bump, and an encapsulation portion. The light emitting structuremay include an n-type semiconductor layer, an active layer, and a p-type semiconductor layer.

23 25 27 23 25 27 23 27 Each of the n-type semiconductor layer, the active layerand the p-type semiconductor layermay include Group III-V based compound semiconductors. By way of example, each of the n-type semiconductor layer, the active layerand the p-type semiconductor layermay include nitride semiconductors such as (Al, Ga, In)N. The n-type semiconductor layermay be interchangeably placed with the p-type semiconductor layer.

23 27 25 23 27 25 25 122 29 The n-type semiconductor layermay be a conductive semiconductor layer containing n-type dopants (for example, Si), and the p-type semiconductor layermay be a conductive semiconductor layer containing p-type dopants (for example, Mg). The active layeris interposed between the n-type semiconductor layerand the p-type semiconductor layer, and may include a multi-quantum well (MQW) structure. The composition of the active layermay be determined to emit light having a desired peak wavelength. In this exemplary embodiment, the composition of the active layermay be determined such that the blue light emitting diode chipcan emit light having a peak wavelength in the blue wavelength band. By way of example, the light emitting structuremay be an AlInGaN-based nitride semiconductor.

5 FIG. 29 25 23 27 23 27 25 Referring again to, in the light emitting structureaccording to this exemplary embodiment, the active layerand the n-type semiconductor layerare sequentially disposed on the p-type semiconductor layerin the stated order. In addition, a portion of the n-type semiconductor layermay be exposed by partially removing the p-type semiconductor layerand the active layer.

31 23 23 33 27 27 122 31 33 The n-type electrodeis disposed on a lower surface of the n-type semiconductor layerto be electrically connected to the n-type semiconductor layerand the p-type electrodeis disposed on a lower surface of the p-type semiconductor layerto be electrically connected to the p-type semiconductor layer. That is, in this exemplary embodiment, the blue light emitting diode chipmay have a horizontal structure in which the n-type electrodeand the p-type electrodeare arranged in the same direction.

39 29 31 33 29 39 29 31 33 39 39 39 29 The encapsulation portionmay be disposed on the lower surface of the light emitting structureto cover the n-type electrode, the p-type electrodeand the light emitting structure. The encapsulation portionexhibits electrically insulating properties and can protect the light emitting structure, the n-type electrodeand the p-type electrodefrom external environments. In this exemplary embodiment, the encapsulation portionmay be formed of a transparent material. Alternatively, the encapsulation portionmay be formed of an opaque material or a translucent material, as needed. Here, the encapsulation portionmay have the same width as the light emitting structure.

35 37 39 31 33 39 35 37 39 The n-type bumpand the p-type bumpmay be disposed to cover a portion of a lower surface of the encapsulation portionand may be electrically connected to the n-type electrodeand the p-type electrodethrough via-holes formed in the encapsulation portion, respectively. The n-type bumpand the p-type bumpare spaced apart from each other on the lower surface of the encapsulation portionto be electrically insulated from each other.

132 134 110 132 110 110 132 110 132 110 132 110 132 134 110 110 132 134 The first substrate electrodeand the second substrate electrodeare provided to the substrate. The first substrate electrodeextends from an upper surface of the substrateto a lower surface thereof through the substrate. That is, a portion of the first substrate electrodeis disposed on the upper surface of the substrateand another portion of the first substrate electrodeis disposed on the lower surface of the substratesuch that both portions of the first substrate electrodeare electrically connected to each other through a via-hole formed in the substrate. Like the first substrate electrode, portions of the second substrate electrodeare disposed on the upper and lower surfaces of the substrate, respectively, and are electrically connected to each other through a via-hole formed in the substrate. In this exemplary embodiment, the first substrate electrodemay be spaced apart from the second substrate electrodeto be electrically insulated from each other.

132 134 110 35 37 120 120 110 35 37 120 132 134 The portions of the first substrate electrodeand the second substrate electrodedisposed on the upper surface of the substratemay be electrically connected to the n-type bumpand the p-type bumpof the light emitting diode chip, and may be bonded thereto by a bonding portion S. That is, the light emitting diode chipis disposed on the substratesuch that the n-type bumpand the p-type bumpdisposed on the lower surface of the light emitting diode chipare electrically connected to the first substrate electrodeand the second substrate electrode, respectively.

140 110 140 29 140 140 The insulating portionis disposed to cover the light emitting diode chip and the upper surface of the substrate. The insulating portionserves to protect the light emitting structureof the light emitting diode chip from external environments and to prevent electric short due to foreign matter. In this exemplary embodiment, the insulating portionmay be formed of a transparent material or a translucent material to allow light emitted from the light emitting diode chip to be discharged outside therethrough. For example, the insulating portionmay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material.

104 110 122 132 134 160 170 The red light emitting diode partincludes a substrate, a blue light emitting diode chip, a first substrate electrode, a second substrate electrode, a phosphor portion, and a color filter.

110 122 132 134 104 102 In this exemplary embodiment, the substrate, the blue light emitting diode chip, the first substrate electrodeand the second substrate electrodeof the red light emitting diode partare the same as those of the blue light emitting diode partand detailed descriptions thereof will be omitted.

140 102 160 122 110 160 160 122 As in the insulating portionof the blue light emitting diode part, the phosphor portionmay be disposed to cover the blue light emitting diode chipand an upper surface of the substrate. The phosphor portionmay contain at least one type of phosphor. Specifically, the phosphor portionmay contain a phosphor capable of emitting red light through wavelength conversion of blue light emitted from the blue light emitting diode chip.

104 122 104 104 160 122 Although the red light emitting diode partincludes the blue light emitting diode chipin this exemplary embodiment, the red light emitting diode partmay include a UV light emitting diode chip, as needed. In the structure wherein the red light emitting diode partincludes the UV light emitting diode chip, the phosphor portionmay contain a phosphor capable of emitting red light through wavelength conversion of UV light emitted from the UV light emitting diode chip.

160 According to this exemplary embodiment, the phosphor portionmay include at least one type of phosphor together with at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material, which are transparent or translucent materials.

170 160 110 170 160 170 122 160 170 170 160 170 The color filtermay be disposed to cover upper and side surfaces of the phosphor portionand the side surface of the substrate. The color filterserves to block light in a predetermined range of wavelengths among light emitted through the phosphor portion. In this exemplary embodiment, the color filterblocks blue light emitted from the blue light emitting diode chipwhile allowing red light emitted from the phosphor portionthrough wavelength conversion to pass therethrough. Accordingly, the color filtercan minimize discharge of blue light from the light emitting diode package. That is, the color filteris provided to the light emitting diode package in order to maximize the ratio of light subjected to wavelength conversion by the phosphor portionto light emitted through the color filter.

170 160 122 The color filtermay have as small a thickness as possible on the upper and side surfaces of the phosphor portionwhile blocking as much blue light emitted from the blue light emitting diode chipas possible.

104 122 170 In the structure wherein the red light emitting diode partincludes the UV light emitting diode chip instead of the blue light emitting diode chip, the color filtermay block UV light emitted from the UV light emitting diode chip. As a result, the color filter can minimize discharge of UV light from the light emitting diode package.

106 110 126 132 134 140 The green light emitting diode partincludes a substrate, a green light emitting diode chip, a first substrate electrode, a second substrate electrode, and an insulating portion.

126 29 31 33 35 37 39 29 23 25 27 29 126 25 126 The green light emitting diode chipincludes a light emitting structure, an n-type electrode, a p-type electrode, an n-type bump, a p-type bump, and an encapsulation portion, in which the light emitting structureincludes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The light emitting structureof the green light emitting diode chipmay be formed of an AlInGaN-based nitride semiconductor and the composition of the active layermay be determined such that the green light emitting diode chipcan emit light having a peak wavelength in the green wavelength band.

102 104 106 200 102 104 106 200 102 104 106 The blue light emitting diode part, the red light emitting diode partand the green light emitting diode partare arranged on an upper surface of the circuit board, which supports the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part. In addition, the circuit boardmay include a plurality of interconnection lines to supply electric power from an external power source to the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part.

200 200 200 102 104 106 102 104 106 In this exemplary embodiment, the circuit boardmay be a printed the circuit boardor a TFT substrate including a plurality of TFT drive circuits therein. In the structure wherein the circuit boardis the TFT substrate, the TFT drive circuits of the TFT substrate may be electrically connected to the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part, respectively. As a result, the blue light emitting diode part, the red light emitting diode partand the green light emitting diode partcan be independently driven by the TFT drive circuits.

200 Alternatively, the circuit boardmay be a flexible printed circuit board or a flexible TFT substrate.

6 FIG. is a sectional view of part of a display apparatus according to a fourth exemplary embodiment of the present invention.

6 FIG. 100 102 104 106 210 Referring to, the display apparatusaccording to the fourth exemplary embodiment includes a blue light emitting diode part, a red light emitting diode part, a green light emitting diode part, and a coupling structure.

102 110 122 132 134 104 110 122 132 134 160 170 106 110 126 132 134 The blue light emitting diode partincludes a substrate, a blue light emitting diode chip, a first substrate electrode, and a second substrate electrode. The red light emitting diode partincludes a substrate, a blue light emitting diode chip, a first substrate electrode, a second substrate electrode, a phosphor portion, and a color filter. The green light emitting diode partincludes a substrate, a green light emitting diode chip, a first substrate electrode, and a second substrate electrode.

102 106 140 104 The blue light emitting diode partand the green light emitting diode partaccording to this exemplary embodiment are the same as those of the display apparatus according to the third exemplary embodiment excluding the insulating portion, and detailed description thereof will be omitted. The red light emitting diode partaccording to this exemplary embodiment is the same as that of the display apparatus according to the third exemplary embodiment, and detailed description thereof will be omitted.

102 106 140 102 104 106 210 102 104 106 Unlike the third exemplary embodiment, each of the blue light emitting diode partand the green light emitting diode partdoes not include the insulating portion, as described above. The blue light emitting diode part, the red light emitting diode partand the green light emitting diode partare spaced apart from one another, and the coupling structureis disposed to cover all of the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part.

210 102 104 106 102 104 106 The coupling structurefills spaces between the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part, and couples the blue light emitting diode part, the red light emitting diode partand the green light emitting diode partto form an integrated structure.

210 140 210 According to this embodiment, the coupling structuremay be formed of a transparent material or a translucent material, like the insulating portionof the third exemplary embodiment. For example, the coupling structuremay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), a ceramic material, an epoxy resin, and a synthetic resin.

7 FIG. is a sectional view of part of a display apparatus according to a fifth exemplary embodiment of the present invention.

7 FIG. 100 110 102 104 106 a Referring to, the display apparatusaccording to the third exemplary embodiment includes a coupling substrate, a blue light emitting diode part, a red light emitting diode part, and a green light emitting diode part.

110 110 132 134 132 134 110 132 134 110 110 a a a a. The coupling substratehas a substrate including a plurality of substratesaccording to the third exemplary embodiment coupled to each other, and is provided with a plurality of first substrate electrodesand a plurality of second substrate electrodes. The first substrate electrodesand the second substrate electrodeshave the same structure as those of the third exemplary embodiment and are arranged on the coupling substratesuch that plural pairs of first and second substrate electrodes,are arranged on the coupling substrate. Here, the plural pairs of first and second substrate electrodes are regularly arranged in rows and columns on the coupling substrate

102 104 106 132 134 102 104 106 102 104 106 110 a. The blue light emitting diode part, the red light emitting diode partand the green light emitting diode partare electrically connected to each of the first substrate electrodesand each of the second substrate electrodes. That is, each of the blue light emitting diode part, the red light emitting diode partand the green light emitting diode partmay be provided in plural, and the plurality of blue light emitting diode parts, the plurality of red light emitting diode partsand the plurality of green light emitting diode partsmay be arranged in rows and columns on the coupling substrate

102 122 140 104 124 140 106 126 140 In this exemplary embodiment, each of the blue light emitting diode partsincludes a blue light emitting diode chipand an insulating portion, and each of the red light emitting diode partsincludes a red light emitting diode chipand an insulating portion. In addition, each of the green light emitting diode partsincludes a green light emitting diode chipand an insulating portion.

102 122 132 134 140 122 132 134 122 35 37 140 35 37 132 134 In the blue light emitting diode part, the blue light emitting diode chipmay be coupled to the first substrate electrodeand the second substrate electrode, and the insulating portionmay be disposed to cover the blue light emitting diode chip, the first substrate electrodeand the second substrate electrode. The blue light emitting diode chipmay have the same structure as that of the third exemplary embodiment, and an n-type bumpand a p-type bumpmay be exposed on a lower surface of the insulating portion. Accordingly, the n-type bumpand the p-type bumpmay be electrically connected to the first substrate electrodeand the second substrate electrode, respectively.

140 35 37 140 132 134 The insulating portionis disposed such that the n-type bumpand the p-type bumpcan be exposed on the lower surface thereof. With this structure, the insulating portionmay be disposed so as not to cover the first substrate electrodeand the second substrate electrode.

104 124 140 124 29 31 33 35 37 39 29 23 25 27 29 25 124 Each of the red light emitting diode partsincludes a red light emitting diode chipand an insulating portion. The red light emitting diode chipmay include a light emitting structure, an n-type electrode, a p-type electrode, an n-type bump, a p-type bump, and an encapsulation portion. The light emitting structuremay include an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The light emitting structuremay be formed of an AlInGaP-based nitride semiconductor. In this exemplary embodiment, the composition of the active layermay be determined such that the red light emitting diode chipcan emit light having a peak wavelength in the red wavelength band.

124 140 102 The arrangement of the red light emitting diode chipand the insulating portionmay be the same as that of the blue light emitting diode part.

106 126 140 126 29 31 33 35 29 23 25 27 25 126 29 Each of the green light emitting diode partsincludes a green light emitting diode chipand an insulating portion. The green light emitting diode chipincludes a light emitting structure, an n-type electrode, a p-type electrode, and an n-type bump. The light emitting structuremay include an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. In this exemplary embodiment, the composition of the active layermay be determined such that the green light emitting diode chipcan emit light having a peak wavelength in the green wavelength band. The light emitting structuremay be formed of an AlInGaN-based nitride semiconductor.

126 140 102 The arrangement of the green light emitting diode chipand the insulating portionmay be the same as that of the blue light emitting diode part.

8 FIG. is a sectional view of part of a display apparatus according to a sixth exemplary embodiment of the present invention.

8 FIG. 100 102 104 106 210 Referring to, the display apparatusaccording to the sixth exemplary embodiment includes a blue light emitting diode part, a red light emitting diode part, a green light emitting diode part, and a coupling structure.

102 106 The blue light emitting diode partand the green light emitting diode partare the same as those of the fifth exemplary embodiment, and detailed description thereof will be omitted.

104 110 124 132 134 102 132 134 110 124 132 134 110 124 The red light emitting diode partincludes a substrate, a red light emitting diode chip, a first substrate electrode, and a second substrate electrode. As in the blue light emitting diode partaccording to the third exemplary embodiment, the first substrate electrodeand the second substrate electrodeaccording to this exemplary embodiment are coupled to the substrate, and the red light emitting diode chipis electrically coupled to the first substrate electrodeand the second substrate electrodeon the substrate. The red light emitting diode chipmay have the same structure and composition as that of the red light emitting diode package according to the third exemplary embodiment.

102 104 106 210 102 104 106 210 102 104 106 102 104 106 8 FIG. With the blue light emitting diode part, the red light emitting diode partand the green light emitting diode partarranged as shown in, the coupling structureis disposed to cover the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part. As in the fourth exemplary embodiment, the coupling structurefills spaces between the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part, and serves to couple the blue light emitting diode part, the red light emitting diode partand the green light emitting diode partto form an integrated structure.

210 210 According to this embodiment, the coupling structuremay be formed of a transparent material or a translucent material. For example, the coupling structuremay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), a ceramic material, an epoxy resin, and a synthetic resin.

9 FIG. is a sectional view of part of a display apparatus according to a seventh exemplary embodiment of the present invention.

9 FIG. 100 102 104 106 200 Referring to, the display apparatusaccording to the seventh exemplary embodiment includes a blue light emitting diode part, a red light emitting diode part, a green light emitting diode part, and a circuit board.

102 110 122 132 134 140 180 The blue light emitting diode partincludes a substrate, a blue light emitting diode chip, a first substrate electrode, a second substrate electrode, an insulating portion, and a connection electrode.

110 102 The substratesupports the blue light emitting diode part, and may include an insulating material and have a predetermined thickness.

9 FIG. 122 29 33 29 23 25 27 As shown in, the blue light emitting diode chiphas a vertical structure and may include a light emitting structureand a p-type electrode. Here, the light emitting structuremay include an n-type semiconductor layer, an active layer, and a p-type semiconductor layer.

29 27 23 25 27 23 31 23 31 29 The light emitting structureincludes a p-type semiconductor layerdisposed at a lower side thereof, an n-type semiconductor layerdisposed at an upper surface thereof, and an active layerinterposed between the p-type semiconductor layerand the n-type semiconductor layer. Although an n-type electrodemay be disposed on an upper surface of the n-type semiconductor layer, description of the n-type electrodeis omitted in this exemplary embodiment. According to this exemplary embodiment, the light emitting structuremay be an AlInGaN-based nitride semiconductor.

33 27 33 33 33 33 33 33 33 33 33 33 33 a b c a b c a a b c The p-type electrodeis disposed on a lower surface of the p-type semiconductor layerand includes first to third electrode portions,,. The first electrode portionelectrically contacts the p-type electrode, and the second electrode portionand the third electrode portionare sequentially disposed on a lower side of the first electrode portion. In this exemplary embodiment, the first electrode portionmay include gold (Au), the second electrode portionmay include aluminum (Al), and the third electrode portionmay include silver (Ag).

33 33 33 33 33 33 a b c 9 FIG. Although the p-type electrodeaccording to this exemplary embodiment has a multilayer structure including the first to third electrode portions,,, the p-type electrodemay have a monolayer structure, as needed, and the p-type electrodemay have a thinner thickness than that shown in.

29 132 33 29 132 33 132 In this exemplary embodiment, the light emitting structureis disposed on the first substrate electrodeand the p-type electrodeof the light emitting structureis electrically connected to the first substrate electrode. Here, the p-type electrodemay be coupled to the first substrate electrodeby a bonding portion S.

180 23 180 23 134 122 In addition, the connection electrodeis disposed to cover the upper surface of the n-type semiconductor layer. The connection electrodeelectrically connects the n-type semiconductor layerto the second substrate electrodeand may include a transparent material, for example, ITO or ZnO, to allow light emitted from the blue light emitting diode chipto pass therethrough.

132 134 122 132 33 134 23 180 The first substrate electrodeand the second substrate electrodeare disposed under the blue light emitting diode chipand are spaced apart from each other so as to be electrically insulated from each other. The first substrate electrodeis electrically connected to the p-type electrodeand the second substrate electrodeis electrically connected to the n-type semiconductor layerthrough the connection electrode.

140 122 140 122 180 140 122 140 The insulating portionis disposed to cover the blue light emitting diode chip. The insulating portionserves to protect the blue light emitting diode chipand the connection electrodefrom external environments and to prevent electric short due to foreign matter. In this exemplary embodiment, the insulating portionmay be formed of a transparent material or a translucent material to allow light emitted from the blue light emitting diode chipto be discharged outside therethrough. For example, the insulating portionmay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material.

104 110 122 132 134 160 170 180 110 122 132 134 102 The red light emitting diode partincludes a substrate, a blue light emitting diode chip, a first substrate electrode, a second substrate electrode, a phosphor portion, a color filter, and a connection electrode. In this exemplary embodiment, the substrate, the blue light emitting diode chip, the first substrate electrodeand the second substrate electrodeare the same as those of the blue light emitting diode partaccording to the third exemplary embodiment.

140 102 160 122 180 110 160 160 122 As in the insulating portionof the blue light emitting diode part, the phosphor portionmay be disposed to cover the blue light emitting diode chip, the connection electrodeand an upper surface of the substrate. The phosphor portionmay contain at least one type of phosphor. Specifically, the phosphor portionmay contain a phosphor capable of emitting red light through wavelength conversion of blue light emitted from the blue light emitting diode chip.

104 122 104 104 160 122 Although the red light emitting diode partincludes the blue light emitting diode chipin this exemplary embodiment, the red light emitting diode partmay include a UV light emitting diode chip, as needed. In the structure wherein the red light emitting diode partincludes the UV light emitting diode chip, the phosphor portionmay contain a phosphor capable of emitting red light through wavelength conversion of UV light emitted from the UV light emitting diode chip.

160 According to this exemplary embodiment, the phosphor portionmay include at least one type of phosphor together with at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material, which are transparent or translucent materials.

170 160 110 170 160 170 122 160 170 170 160 170 The color filtermay be disposed to cover upper and side surfaces of the phosphor portionand the side surface of the substrate. The color filterserves to block light in a predetermined range of wavelengths among light emitted through the phosphor portion. In this exemplary embodiment, the color filterblocks blue light emitted from the blue light emitting diode chipwhile allowing red light emitted from the phosphor portionthrough wavelength conversion to pass therethrough. Accordingly, the color filtercan minimize discharge of blue light from the light emitting diode package. That is, the color filteris provided to the light emitting diode package in order to maximize the ratio of light subjected to wavelength conversion by the phosphor portionto light emitted through the color filter.

170 160 122 The color filtermay have as small a thickness as possible on the upper and side surfaces of the phosphor portionwhile blocking as much blue light emitted from the blue light emitting diode chipas possible.

104 122 170 In the structure wherein the red light emitting diode partincludes the UV light emitting diode chip instead of the blue light emitting diode chip, the color filtermay block UV light emitted from the UV light emitting diode chip. As a result, the color filter can minimize discharge of UV light from the light emitting diode package.

106 110 126 132 134 180 The green light emitting diode partincludes a substrate, a green light emitting diode chip, a first substrate electrode, a second substrate electrode, and a connection electrode.

126 29 33 29 23 25 27 29 126 25 126 The green light emitting diode chipincludes a light emitting structureand a p-type electrode, in which the light emitting structureincludes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The light emitting structureof the green light emitting diode chipmay be formed of an AlInGaN-based nitride semiconductor and the composition of the active layermay be determined such that the green light emitting diode chipcan emit light having a peak wavelength in the green wavelength band.

106 102 126 In this exemplary embodiment, the green light emitting diode parthas the same structure as the blue light emitting diode partexcept for the use of the green light emitting diode chip, and thus detailed description thereof will be omitted.

102 104 106 200 200 The blue light emitting diode part, the red light emitting diode partand the green light emitting diode partare arranged on an upper surface of the circuit board. The circuit boardaccording to this exemplary embodiment may be the same as the circuit board according to the third exemplary embodiment.

10 FIG. is a sectional view of part of a display apparatus according to an eighth exemplary embodiment of the present invention.

10 FIG. 100 102 104 106 210 Referring to, the display apparatusaccording to the eighth exemplary embodiment includes a blue light emitting diode part, a red light emitting diode part, a green light emitting diode part, and a coupling structure.

102 110 122 132 134 180 104 110 122 132 134 160 170 180 106 110 126 132 134 180 The blue light emitting diode partincludes a substrate, a blue light emitting diode chip, a first substrate electrode, a second substrate electrode, and a connection electrode. The red light emitting diode partincludes a substrate, a blue light emitting diode chip, a first substrate electrode, a second substrate electrode, a phosphor portion, a color filter, and a connection electrode. The green light emitting diode partincludes a substrate, a green light emitting diode chip, a first substrate electrode, a second substrate electrode, and a connection electrode.

102 106 140 104 According to this exemplary embodiment, the blue light emitting diode partand the green light emitting diode partare the same as those of the display apparatus according to the fifth exemplary embodiment except for the insulating portion, and thus detailed description thereof will be omitted. The red light emitting diode partaccording to this exemplary embodiment is the same as that of the display apparatus according to third exemplary embodiment, and detailed description thereof will be omitted.

102 104 106 210 102 104 106 The blue light emitting diode part, the red light emitting diode partand the green light emitting diode partare spaced apart from one another, and the coupling structureis disposed to cover all of the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part.

210 102 104 106 102 104 106 The coupling structurefills spaces between the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part, and couples the blue light emitting diode part, the red light emitting diode partand the green light emitting diode partto form an integrated structure.

210 140 210 According to this embodiment, the coupling structuremay be formed of a transparent material or a translucent material, like the insulating portionof the third exemplary embodiment. For example, the coupling structuremay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), a ceramic material, an epoxy resin, and a synthetic resin.

11 FIG. is a sectional view of part of a display apparatus according to a ninth exemplary embodiment of the present invention.

11 FIG. 100 102 104 106 210 Referring to, the display apparatusaccording to the ninth exemplary embodiment includes a blue light emitting diode part, a red light emitting diode part, a green light emitting diode part, and a coupling structure.

102 106 The blue light emitting diode partand the green light emitting diode partare the same as those of the eighth exemplary embodiment, and detailed description thereof will be omitted.

104 110 124 132 134 180 102 132 134 110 124 132 134 The red light emitting diode partincludes a substrate, a red light emitting diode chip, a first substrate electrode, a second substrate electrode, and a connection electrode. As in the blue light emitting diode part, the first substrate electrodeand the second substrate electrodeaccording to this exemplary embodiment are coupled to the substrate, and the red light emitting diode chipis electrically coupled to the first substrate electrodeand the second substrate electrode.

124 29 33 29 31 25 33 29 124 25 124 The red light emitting diode chipincludes a light emitting structureand a p-type electrode, in which the light emitting structureincludes an n-type electrode, an active layerand a p-type electrode. The light emitting structureof the red light emitting diode chipmay be formed of an AlInGaP-based nitride semiconductor and the composition of the active layermay be determined such that the red light emitting diode chipcan emit light having a peak wavelength in the red wavelength band.

102 104 106 210 102 104 106 210 102 104 106 102 104 106 11 FIG. With the blue light emitting diode part, the red light emitting diode partand the green light emitting diode partarranged as shown in, the coupling structureis disposed to cover the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part. As in the eighth exemplary embodiment, the coupling structurefills spaces between the blue light emitting diode part, the red light emitting diode partand the green light emitting diode part, and couples the blue light emitting diode part, the red light emitting diode partand the green light emitting diode partto form an integrated structure.

210 210 According to this exemplary embodiment, the coupling structuremay be formed of a transparent material or a translucent material. For example, the coupling structuremay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), a ceramic material, an epoxy resin, and a synthetic resin.

12 FIG. is a sectional view of a light emitting diode package according to a tenth exemplary embodiment of the present invention.

12 FIG. 100 110 120 132 134 140 a Referring to, a light emitting diode partaccording to the tenth exemplary embodiment includes a substrate, a light emitting diode chip, a first substrate electrode, a second substrate electrode, and an insulating portion.

110 100 120 110 a The substratesupports the light emitting diode partand the light emitting diode chip. In this exemplary embodiment, the substratemay be formed of an insulating material and have a predetermined thickness.

120 110 120 29 31 33 35 37 39 29 23 25 27 12 FIG. The light emitting diode chipis disposed on the substrateand may emit light upon receiving power from an external power source. As shown in, the light emitting diode chipmay include a light emitting structure, an n-type electrode, a p-type electrode, an n-type bump, a p-type bump, and an encapsulation portion. The light emitting structuremay include an n-type semiconductor layer, an active layer, and a p-type semiconductor layer.

23 25 27 23 25 27 23 27 Each of the n-type semiconductor layer, the active layerand the p-type semiconductor layermay include Group III-V based compound semiconductors. By way of example, each of the n-type semiconductor layer, the active layerand the p-type semiconductor layermay include nitride semiconductors such as (Al, Ga, In)N. The n-type semiconductor layermay be interchangeably placed with the p-type semiconductor layer.

23 27 25 23 27 25 The n-type semiconductor layermay be a conductive semiconductor layer containing n-type dopants (for example, Si), and the p-type semiconductor layermay be a conductive semiconductor layer containing p-type dopants (for example, Mg). The active layeris interposed between the n-type semiconductor layerand the p-type semiconductor layer, and may include a multi-quantum well (MQW) structure. The composition of the active layermay be determined to emit light having a desired peak wavelength.

120 29 29 29 In this exemplary embodiment, the light emitting diode chipmay emit blue light or green light. In this case, the light emitting structuremay be an AlInGaN-based nitride semiconductor. Alternatively, the light emitting structuremay emit red light. In this case, the light emitting structuremay be an AlGaInP-based nitride semiconductor.

12 FIG. 29 25 23 27 23 27 25 Referring to, in the light emitting structureaccording to this exemplary embodiment, the active layerand the n-type semiconductor layerare sequentially disposed on the p-type semiconductor layerin the stated order. In addition, a portion of the n-type semiconductor layermay be exposed by partially removing the p-type semiconductor layerand the active layer.

33 27 27 31 23 23 120 120 31 33 The p-type electrodeis disposed on a lower surface of the p-type semiconductor layerto be electrically connected to the p-type semiconductor layer, and the n-type electrodeis disposed on the exposed portion of the n-type semiconductor layerto be electrically connected to the n-type semiconductor layer. That is, in this exemplary embodiment, the light emitting diode chipmay be a horizontal type light emitting diode chipin which the n-type electrodeand the p-type electrodeare arranged in the same direction.

39 29 31 33 29 39 29 31 33 39 39 39 29 The encapsulation portionmay be disposed on the lower surface of the light emitting structureto cover the n-type electrode, the p-type electrodeand the light emitting structure. The encapsulation portionexhibits electrically insulating properties and can protect the light emitting structure, the n-type electrodeand the p-type electrodefrom external environments. In this exemplary embodiment, the encapsulation portionmay be formed of a transparent material. Alternatively, the encapsulation portionmay be formed of an opaque material or a translucent material, as needed. Here, the encapsulation portionmay have the same width as the light emitting structure.

35 37 39 35 31 37 33 39 35 37 39 Each of the n-type bumpand the p-type bumpmay be disposed to cover a portion of a lower surface of the encapsulation portion. In addition, the n-type bumpmay be electrically connected to the n-type electrodeand the p-type bumpmay be electrically connected to the p-type electrodethrough via-holes formed in the encapsulation portion. The n-type bumpand the p-type bumpare spaced apart from each other on the lower surface of the encapsulation portionto be electrically insulated from each other.

132 134 110 132 110 110 132 110 132 110 132 110 132 134 110 110 132 134 The first substrate electrodeand the second substrate electrodeare provided to the substrate. The first substrate electrodeextends from an upper surface of the substrateto a lower surface thereof through the substrate. That is, a portion of the first substrate electrodeis disposed on the upper surface of the substrateand another portion of the first substrate electrodeis disposed on the lower surface of the substratesuch that both portions of the first substrate electrodeare electrically connected to each other through a via-hole formed in the substrate. Like the first substrate electrode, portions of the second substrate electrodeare disposed on the upper and lower surfaces of the substrate, respectively, and are electrically connected to each other through a via-hole formed in the substrate. In this exemplary embodiment, the first substrate electrodemay be spaced apart from the second substrate electrodeto be electrically insulated from each other.

132 134 110 35 37 120 120 110 35 37 120 132 134 The portions of the first substrate electrodeand the second substrate electrodedisposed on the upper surface of the substratemay be electrically connected to the n-type bumpand the p-type bumpof the light emitting diode chip, and may be bonded thereto by a bonding portion S. That is, the light emitting diode chipis disposed on the substratesuch that the n-type bumpand the p-type bumpdisposed on the lower surface of the light emitting diode chipare electrically connected to the first substrate electrodeand the second substrate electrode, respectively.

140 120 110 140 29 120 140 120 140 The insulating portionmay be disposed to cover the light emitting diode chipand the upper surface of the substrate. The insulating portionserves to protect the light emitting structureof the light emitting diode chipfrom external environments and to prevent electric short due to foreign matter. In this exemplary embodiment, the insulating portionmay be formed of a transparent material or a translucent material to allow light emitted from the light emitting diode chipto be discharged outside therethrough. For example, the insulating portionmay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material.

120 1 120 110 120 1 In this exemplary embodiment, since the light emitting diode chiphas a predetermined width Lor less, the light emitting diode chipis used in a state of being mounted on the substrate. For example, the light emitting diode chipmay have a width Lof 200 μm or less, specifically 50 μm or less, or 10 μm or less.

120 1 120 120 120 100 2 100 100 a a a. In the related art, since light emitting diode chipshaving a small width Lare used, it is not easy to mount each of the light emitting diode chipson a printed circuit board and to replace the light emitting diode chipmounted on the printed circuit board due to failure of the light emitting diode chip. According to this exemplary embodiment, the light emitting diode partmay have a width Lof 150 μm or more, which is the minimum width for a manufacturing process thereof, preferably greater than 200 μm. Accordingly, the light emitting diode partcan be relatively large while reducing the luminous area of the light emitting diode part

120 100 100 a a. Furthermore, the size of the light emitting diode chipcan be reduced while reducing the luminous area of the light emitting diode part, thereby reducing manufacturing costs of the light emitting diode part

13 FIG. is a sectional view of a light emitting diode package according to an eleventh exemplary embodiment of the present invention.

13 FIG. 100 110 120 132 134 140 150 a Referring to, a light emitting diode partaccording to the eleventh exemplary embodiment includes a substrate, a light emitting diode chip, a first substrate electrode, a second substrate electrode, an insulating portion, and a reflective portion. Descriptions of the same components as the tenth exemplary embodiment will be omitted herein.

110 120 132 134 140 In this exemplary embodiment, the substrate, the light emitting diode chip, the first substrate electrode, the second substrate electrode, and the insulating portionare the same as those of the light emitting diode package according to the tenth exemplary embodiment.

150 110 140 150 120 140 150 150 The reflective portionis disposed to surround side surfaces of the substrateand the insulating portion. The reflective portionserves to reflect light traveling in a lateral direction of the light emitting diode package when the light emitted from the light emitting diode chipis discharged through the insulating portion. Thus, the reflective portionmay include an opaque material having high reflectivity while providing less light loss. In addition, the reflective portionmay be coated with a high reflectivity (HR) material, as needed. Here, the HR material may be silver (Ag) or a stacked layer of TiO2/SiO2.

120 100 100 When light emitted from the light emitting diode chipis discharged through side surfaces of plural light emitting diode packagesmounted on a printed circuit board, there can be a disturbance in mixture of different colors emitted from the light emitting diode packages.

100 100 100 100 100 100 a a a That is, in a structure wherein a blue light emitting diode part, a red light emitting diode partand a green light emitting diode partare mounted on the printed circuit board, white light can be realized through mixture of light emitted from these light emitting diode packages. Here, when light is emitted from the side surfaces of the light emitting diode packages, uneven mixing of the light emitted from the light emitting diode packagesoccurs, thereby causing deterioration in color reproduction.

150 110 140 100 a According to this exemplary embodiment, the reflective portionis disposed to surround the side surfaces of the substrateand the insulating portionto reflect light emitted from the light emitting diode partin an upward direction.

14 FIG. is a sectional view of a light emitting diode package according to a twelfth exemplary embodiment of the present invention.

14 FIG. 100 110 120 132 134 160 170 a Referring to, a light emitting diode partaccording to the twelfth exemplary embodiment includes a substrate, a light emitting diode chip, a first substrate electrode, a second substrate electrode, a phosphor portion, and a color filter.

110 120 132 134 In this exemplary embodiment, the substrate, the light emitting diode chip, the first substrate electrode, and the second substrate electrodeare the same as those of the light emitting diode package according to the tenth exemplary embodiment, and thus descriptions thereof will be omitted herein

160 120 110 160 120 The phosphor portionmay be disposed to cover the light emitting diode chipand an upper surface of the substrate. The phosphor portionmay contain at least one type of phosphor. In this exemplary embodiment, the light emitting diode chipmay be a blue or UV light emitting diode chip.

160 160 160 160 160 Accordingly, the phosphor portionmay emit red light or green light through wavelength conversion of blue or UV light emitted from a blue light emitting diode chip or a UV light emitting diode chip. In order to allow the phosphor portionto emit red light, the phosphor portionmay contain a phosphor capable of emitting red light through wavelength conversion of blue light or UV light. In order to allow the phosphor portionto emit green light, the phosphor portionmay contain a phosphor capable of emitting green light through wavelength conversion of blue light or UV light.

160 140 According to this exemplary embodiment, the phosphor portionmay include at least one type of phosphor together with a transparent material or a translucent material, which includes at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material, as in the insulating portionof the light emitting diode package according to the tenth exemplary embodiment.

170 160 110 170 160 110 170 120 170 160 170 160 170 3 FIG. The color filtermay be disposed to cover the phosphor portionand the side surface of the substrate. As shown in, the color filtercovers upper and side surfaces of the phosphor portionwhile covering the side surface of the substrate. The color filterserves to block blue light or UV light emitted from the light emitting diode chip. Accordingly, the color filtercan minimize discharge of blue light or UV light from the light emitting diode package by blocking the blue light or the UV light emitted through the phosphor portion. That is, the color filteris provided to the light emitting diode package in order to maximize the ratio of light subjected to wavelength conversion by the phosphor portionto light emitted through the color filter.

15 FIG. is a sectional view of a light emitting diode package according to a thirteenth exemplary embodiment of the present invention.

15 FIG. 100 110 120 132 134 160 170 150 a Referring to, a light emitting diode partaccording to the thirteenth exemplary embodiment includes a substrate, a light emitting diode chip, a first substrate electrode, a second substrate electrode, a phosphor portion, a color filter, and a reflective portion.

110 120 132 134 160 170 In this exemplary embodiment, the substrate, the light emitting diode chip, the first substrate electrode, the second substrate electrode, the phosphor portion, and the color filterare the same as those of the light emitting diode package according to the twelfth exemplary embodiment and thus descriptions thereof will be omitted herein.

150 170 150 120 160 170 150 150 The reflective portionis disposed to surround a side surface of the color filter. The reflective portionserves to reflect light traveling in a lateral direction of the light emitting diode package when the light emitted from the light emitting diode chipis discharged through the phosphor portionand the color filter. Thus, as in the eleventh exemplary embodiment, the reflective portionmay include an opaque material having high reflectivity while providing less light loss. In addition, the reflective portionmay be coated with a high reflectivity (HR) material, as needed.

16 FIG. is a sectional view of a light emitting diode package according to a fourteenth exemplary embodiment of the present invention.

16 FIG. 100 110 120 132 134 140 180 a Referring to, a light emitting diode partaccording to the fourteenth exemplary embodiment includes a substrate, a light emitting diode chip, a first substrate electrode, a second substrate electrode, an insulating portion, and a connection electrode.

110 132 134 110 132 134 132 134 110 132 134 110 In this exemplary embodiment, the substrate, the first substrate electrodeand the second substrate electrodeare the same as those of the light emitting diode package according to the tenth exemplary embodiment. In this exemplary embodiment, the substratemay have a smaller size than the substrate of the tenth exemplary embodiment, and the distance between the first substrate electrodeand the second substrate electrodemay be smaller than that of the tenth exemplary embodiment. In addition, although the first substrate electrodeand the second substrate electrodemay not be disposed on the upper surface of the substrate, the first substrate electrodeand the second substrate electrodemay be exposed to the upper surface of the substrate, as needed.

120 132 132 120 29 31 33 29 23 25 27 5 FIG. The light emitting diode chipmay be disposed on the first substrate electrodeto be electrically connected to the first substrate electrode. Referring to, the light emitting diode chipincludes a light emitting structure, an n-type electrodeand a p-type electrode. In this exemplary embodiment, the light emitting structuremay include an n-type semiconductor layer, an active layer, and a p-type semiconductor layer.

120 25 27 23 23 27 In this exemplary embodiment, the light emitting diode chipmay be a vertical type light emitting diode chip in which the active layerand the p-type semiconductor layerare sequentially stacked on the n-type semiconductor layerin the stated order. Here, the n-type semiconductor layermay be interchangeable with the p-type semiconductor layer.

31 23 33 27 31 132 23 33 27 31 132 The n-type electrodemay be disposed on a lower surface of the n-type semiconductor layerand the p-type electrodemay be disposed on an upper surface of the p-type semiconductor layer. The n-type electrodeelectrically connects the first substrate electrodeto the n-type semiconductor layer. The p-type electrodeis disposed on an upper surface of the p-type semiconductor layerand may include a transparent material. Although not shown in the drawings, the n-type electrodemay be coupled to the first substrate electrodevia a bonding portion S.

180 33 134 180 33 134 180 33 134 5 FIG. The connection electrodemay be disposed to cover the p-type electrodeand extend to be electrically connected to the second substrate electrode. That is, the connection electrodeelectrically connects the p-type electrodeto the second substrate electrode. Thus, as shown in, the connection electrodecovers the p-type electrode, extends in one direction, is bent to extend downwards, and is bent and extends in one direction to be electrically connected to the second substrate electrode.

180 120 180 180 134 180 134 The connection electrodemay include a transparent material such as indium tin oxide (ITO) or ZnO to allow light emitted from the light emitting diode chipto pass therethrough. Here, some portions of the connection electrodemay be formed of a transparent material and a portion of the connection electrodecontacting the second substrate electrodemay include an opaque material. The connection electrodemay be coupled to the second substrate electrodevia a bonding portion S.

140 120 110 140 29 120 180 140 120 180 180 140 140 The insulating portionmay be disposed to cover the light emitting diode chipand an upper surface of the substrate. The insulating portionserves to protect the light emitting structureof the light emitting diode chipand the connection electrodefrom external environments. Accordingly, the insulating portionmay be disposed to cover upper and side surfaces of the light emitting diode chipwhile covering the entirety of the connection electrodesuch that the connection electrodecannot be exposed outside by the insulating portion. As in the tenth exemplary embodiment, the insulating portionmay include at least one of polydimethylsiloxane (PDMS), polyimide, poly(methyl methacrylate) (PMMA), and a ceramic material.

140 140 160 140 100 170 a In this exemplary embodiment, the insulating portionmay contain at least one type of phosphor. Here, the insulating portionmay act as the phosphor portionof the twelfth exemplary embodiment. In the structure wherein the insulating portioncontains at least one type of phosphor, the light emitting diode partaccording to this exemplary embodiment may further include the color filteras described in the twelfth exemplary embodiment.

120 3 100 4 a In this exemplary embodiment, the light emitting diode chipmay have a width Lof 50 μm or less, or 10 μm or less. The light emitting diode partmay have a width Lof 150 μm or more (preferably greater than 200 μm).

17 FIG. is a sectional view of a light emitting diode package according to a fifteenth exemplary embodiment of the present invention.

17 FIG. 100 110 120 132 134 140 150 180 a Referring to, a light emitting diode partaccording to the fifteenth exemplary embodiment includes a substrate, a light emitting diode chip, a first substrate electrode, a second substrate electrode, an insulating portion, a reflective portion, and a connection electrode.

110 132 134 140 180 In this exemplary embodiment, the substrate, the first substrate electrode, the second substrate electrode, the insulating portion, and the connection electrodeare the same as those of the light emitting diode package according to the fourteenth exemplary embodiment, and descriptions thereof will be omitted herein.

150 110 140 150 120 140 150 150 The reflective portionis disposed to surround side surfaces of the substrateand the insulating portion. The reflective portionserves to reflect light traveling in the lateral direction of the light emitting diode package when the light emitted from the light emitting diode chipis discharged through the insulating portion. Thus, as in the eleventh exemplary embodiment, the reflective portionmay include an opaque material having high reflectivity while providing less light loss. In addition, the reflective portionmay be coated with a high reflectivity (HR) material, as needed.

Although some exemplary embodiments have been described herein, it should be understood by those skilled in the art that these embodiments are given by way of illustration only, and that various modifications, variations, and alterations can be made without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should be limited only by the accompanying claims and equivalents thereof.