Light Emitting Element Transfer Apparatus, and Method of Driving Light Emitting Element Transfer Apparatus

This application claims priority to Korean Patent Application No. 10-2024-0189749, filed on December 18, 2024 in the Korean Intellectual Property Office, the entire contents of which is hereby expressly incorporated by reference into the present application.

The present disclosure relates to a light emitting element transfer apparatus and a method of driving the light emitting element transfer apparatus.

In today's information society, display devices for presenting images or visual information to users are increasingly important. The various needs for display devices have caused display technology to be rapidly developed, and indeed, various types of display devices, such as a liquid crystal display (LCD) device, an organic light emitting display (OLED) device, an inorganic light emitting display (iLED) device, a micro light emitting display (micro LED) device, a mini light emitting displays (mini LED) device, a quantum dot light emitting display (QLED) device, and the like, have been developed and widely used.

Display devices can include a plurality of light emitting elements. The plurality of light emitting elements can be transferred onto a substrate. The plurality of light emitting elements can be transferred onto the substrate by various techniques.

One or more aspects of the present disclosure can provide a light emitting element transfer apparatus that includes an injection part, a stack part, and an output part and is capable of aligning light emitting elements, and a method of driving the light emitting element transfer apparatus.

One or more aspects of the present disclosure can provide a light emitting element transfer apparatus that includes an injection part, a stack part, and an output part and is capable of stacking up light emitting elements, and a method of driving the light emitting element transfer apparatus.

One or more aspects of the present disclosure can provide a light emitting element transfer apparatus that includes an injection part, a stack part, and an output part and is capable of transferring light emitting elements, and a method of driving the light emitting element transfer apparatus.

One or more aspects of the present disclosure can provide a light emitting element transfer apparatus that includes an injection part, a stack part, and an output part and is capable of optimizing processes, and a method of driving the light emitting element transfer apparatus.

Aspects, examples, and embodiments provided in the present disclosure are not limited to the foregoing description, and additional aspects, examples, and embodiments provided in the present disclosure will become apparent to those skilled in the art from the following description.

According to one or more example embodiments of the present disclosure, a light emitting element transfer apparatus can include a plurality of injection parts into which a plurality of light emitting elements are respectively injected, a plurality of stack parts corresponding respectively to the plurality of injection parts and allowing the plurality of light emitting elements respectively injected into the plurality of injection parts to be stacked, and a plurality of output parts corresponding respectively to the plurality of stack parts and outputting sequentially the plurality of light emitting elements stacked in the plurality of stack parts.

According to one or more example embodiments of the present disclosure, a method of driving a light emitting element transfer apparatus can include a light emitting element injection step of forming a first electric field by an element injection part to hold a first light emitting element among a plurality of light emitting elements in the element injection part, a light emitting element stacking step of forming a second electric field by an stack part located under the element injection part and removing the first electric field by the element injection part such that the first light emitting element moves into the stack part and is held therein, a first transfer preparation step of forming a third electric field by an output part located under the element injection part and removing the second electric field by the stack part such that the first light emitting element moves into the output part and is held therein, and a transfer step of removing the third electric field by the output part such that the first light emitting element is transferred onto a substrate.

According to one or more aspects of the present disclosure, a light emitting element transfer apparatus including an injection part, a stack part, and an output part and a method of driving the light emitting element transfer apparatus can be capable of aligning light emitting elements.

According to one or more aspects of the present disclosure, a light emitting element transfer apparatus including an injection part, a stack part, and an output part and a method of driving the light emitting element transfer apparatus can be capable of stacking up light emitting elements.

According to one or more aspects of the present disclosure, a light emitting element transfer apparatus including an injection part, a stack part, and an output part and a method of driving the light emitting element transfer apparatus can be capable of transferring light emitting elements.

According to one or more aspects of the present disclosure, a light emitting element transfer apparatus including an injection part, a stack part, and an output part and a method of driving the light emitting element transfer apparatus can be capable of optimizing processes.

Effects or advantages from aspects, examples, and embodiments described herein are not limited thereto, and additional effects or advantages will become apparent to those skilled in the art from the following description.

In the following description of examples or embodiments of the present invention, reference will be made to the accompanying drawings in which it is shown by way of illustration specific examples or embodiments that can be implemented, and in which the same reference numerals and signs can be used to designate the same or like components even when they are shown in different accompanying drawings from one another. Further, in the following description of examples or embodiments of the present invention, detailed descriptions of well-known functions and components incorporated herein will be omitted when it is determined that the description can make the subject matter in some embodiments of the present invention rather unclear. Where the terms “comprise,” “have,” “include,” “contain,” “constitute,” “compose, “make up of,” “formed of,” and the like are used, one or more other elements can be added unless the term, such as “only,” is used. An element described in the singular form is intended to include a plurality of elements, and vice versa, unless the context clearly indicates otherwise.

Although the terms “first,” “second,” A, B, (a), (b), and the like can be used herein to describe various elements, these elements should not be interpreted to be limited by these terms as they are not used to define a particular order or precedence. These terms are used only to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure.

When it is mentioned that a first element "is connected or coupled to", “contacts or overlaps” etc. a second element, it should be interpreted that, not only can the first element “be directly connected or coupled to” or “directly contact or overlap” the second element, but a third element can also be "interposed" between the first and second elements, or the first and second elements can "be connected or coupled to", “contact or overlap”, etc. each other via a fourth element. Here, the second element can be included in at least one of two or more elements that "are connected or coupled to", “contact or overlap”, etc. each other.

Where positional relationships are described, for example, where the positional relationship between two parts is described using “on,” “over,” “under,” “above,” “below,” “beside,” “next,” or the like, one or more other parts can be located between the two parts unless a more limiting term, such as “immediate(ly),” “direct(ly),” or “close(ly)” is used. For example, where an element or layer is disposed “on” another element or layer, a third element or layer can be interposed therebetween. Furthermore, the terms “left,” “right,” “top,” “bottom, “downward,” “upward,” “upper,” “lower,” and the like refer to an arbitrary frame of reference.

In addition, when any dimensions, relative sizes etc. are mentioned, it should be considered that numerical values for an elements or features, or corresponding information (e.g., level, range, etc.) include a tolerance or error range that can be caused by various factors (e.g., process factors, internal or external impact, noise, etc.) even when a relevant description is not specified. Further, the term “can” fully encompasses all the meanings of the term “may” and vice versa.

Hereinafter, various example embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In addition, for convenience of description, a scale in which each of elements is illustrated in the accompanying drawings can differ from an actual scale. Thus, the illustrated elements are not limited to the specific scale in which they are illustrated in the drawings.

1 FIG. 100 illustrates an example system configuration of a display deviceaccording to aspects of the present disclosure.

1 FIG. 100 110 110 120 130 140 Referring to, in one or more example embodiments, the display devicecan include a display paneland at least one display driving circuit, as elements for display images. The at least one display driving circuit can be one or more circuits for driving the display panel, and include a data driving circuit, a gate driving circuit, a display controller, and other circuit components.

110 111 111 The display panelcan include a substrateand a plurality of subpixels SP disposed on the substrate.

111 110 The substrateof the display panelcan include a display area DA allowing an image to be displayed and a non-display area NDA located outside of the display area DA.

A plurality of subpixels SP for displaying an image can be disposed in the display area DA, and the non-display area NDA can include a pad area located in a first direction from the display area DA.

110 In one or more aspects, the non-display area NDA of the display panelcan have a very small area compared to the display area DA. Herein, the non-display area NDA can be also referred to as a non-active area, a bezel, or a bezel area.

111 110 Several types of signal lines for driving a plurality of subpixels SP can be disposed on the substrateof the display panel.

100 110 100 In one or more aspects, the display devicecan be a liquid crystal display device or the like, or a self-emission display device in which light is emitted from the display panelitself. In an example where the display deviceis the self-emission display device, each of the plurality of subpixels SP can include a light emitting element.

100 100 100 For example, the display devicecan be an organic light emitting display device implemented with organic light emitting diodes (OLED) as light emitting elements. In another example, the display devicecan be an inorganic light emitting display device implemented with inorganic material-based light emitting diodes as light emitting elements. In further another example, the display devicecan be a quantum dot display device implemented with quantum dots, which are self-emission semiconductor crystals, as light emitting elements.

100 100 The structure of each of the plurality of subpixels SP can depend on types of display device. For example, in an example where the display deviceis a self-emission display device including self-emission subpixels SP, each subpixel SP can include a self-emission light emitting element, one or more transistors, and one or more capacitors.

The several types of signal lines can include, for example, a plurality of data lines DL for carrying data signals (which can be referred to as data voltages or image signals), a plurality of gate lines GL for carrying gate signals (which can be referred to as scan signals), and the like.

120 The data driving circuitcan be a circuit for driving a plurality of data lines DL and can output data signals to the plurality of data lines DL.

120 140 The data driving circuitcan receive image data DATA in digital form from the display controller, convert the received image data DATA into data signals in analog form, and output converted data signals to the plurality of data lines DL.

120 110 120 110 110 The data driving circuitcan be located in, and/or electrically connected to, but not limited to, only one side or edge (e.g., an upper portion or a lower portion) of the display panel. In one or more aspects, the data driving circuitcan be disposed in, and/or electrically connected to, but not limited to, two sides or edges (e.g., an upper portion and a lower portion) of the display panelor at least two of four sides or edges (e.g., the upper portion, the lower portion, a left portion, and a right portion) of the display panelaccording to driving schemes, panel design schemes, or the like.

120 110 110 The data driving circuitcan be connected to outside, or an edge, of the display area DA of the display panel, or be disposed in the display area DA of the display panel.

130 The gate driving circuitcan be a circuit for driving a plurality of gate lines GL and can output gate signals to the plurality of gate lines GL.

130 130 The gate driving circuitcan receive various types of gate driving control signals GCS, and further receive a first gate voltage corresponding to a turn-on level voltage and a second gate voltage corresponding to a turn-off level voltage. Thereby, the gate driving circuitcan generate gate signals and supply the generated gate signals to the plurality of gate lines GL.

140 120 130 The display controllercan be a device for controlling the data driving circuitand the gate driving circuit, and can control driving timing for the plurality of data lines DL and driving timing for the plurality of gate lines GL.

140 120 120 130 130 The display controllercan supply a data driving control signal DCS to the data driving circuitto control the data driving circuit, and supply a gate driving control signal GCS to the gate driving circuitto control the gate driving circuit.

140 150 120 120 The display controllercan receive image data input from a host systemand supply image data DATA readable by the data driving circuitbased on the input image data to the data driving circuit.

140 120 120 The display controllercan be implemented in a separate component from the data driving circuit, or incorporated in the data driving circuitand thus implemented in an integrated circuit.

140 140 The display controllercan be a timing controller used in the typical display technology or a controller or a control device capable of performing other control functions in addition to the function of the typical timing controller. In one or more embodiments, the display controllercan be a controller or a control device different from the timing controller, or a circuitry or a component included in the controller or the control device.

140 130 120 The display controllercan be mounted on a printed circuit board, a flexible printed circuit, and/or the like and be electrically connected to the gate driving circuitand the data driving circuitthrough the printed circuit board, flexible printed circuit, and/or the like.

100 In one or more aspects, to provide a touch sensing function, as well as an image display function, the display devicecan include a touch sensor, and a touch sensing circuit configured to sense the touch sensor and detect the presence or absence of a touch by an object such as a finger, a pen, or the like, or the location of the touch.

The touch sensing circuit can include a touch driving circuit configured to drive and sense the touch sensor and generate and output touch sensing data, and a touch controller capable of detecting the presence or absence of a touch or the location of the touch using the touch sensing data.

The touch sensor can include a plurality of touch electrodes. The touch sensor can further include a plurality of touch lines to electrically connect the plurality of touch electrodes to the touch driving circuit.

The touch driving circuit can supply a touch driving signal to at least one of a plurality of touch electrodes and generate touch sensing data by sensing at least one of the plurality of touch electrodes.

In one or more aspects, the touch driving circuit and touch controller included in the touch sensing circuit can be implemented in separate devices or in a single device. In one or more aspects, the touch driving circuit and the data driving circuit can be implemented in separate devices or in a single device.

100 The display devicecan further include a power supply circuit for supplying various types of power to the display driving circuit and/or the touch sensing circuit.

100 In one or more embodiments, the display devicecan further include an electronic device such as a camera (e.g., an image sensor), a sensor capable of detecting an object, and the like. For example, the sensor can be a sensor capable of detecting an object or a human body by receiving light such as infrared light, ultrasonic light, ultraviolet light or the like.

2 FIG. illustrates an example subpixel according to aspects of the present disclosure.

2 FIG. Referring to, in one or more example embodiments, each of a plurality of subpixels SP can include a light emitting element ED and a subpixel circuit SPC for driving the light emitting element ED.

The subpixel circuit SPC can include a plurality of pixel driving transistors and at least one capacitor for driving the light emitting element ED. The subpixel circuit SPC can drive the light emitting element ED by supplying a driving current to the light emitting element ED at a predefined timing. The light emitting element ED can emit light by being driven by the driving current.

The plurality of pixel driving transistors can include a driving transistor DT for driving the light emitting element ED and a scan transistor ST configured to be turned on or off according to a scan signal SC.

The driving transistor DT can supply a driving current to the light emitting element ED.

The scan transistor ST can be configured to control an electrical state of a corresponding node in the subpixel circuit SPC or to control the state or operation of the driving transistor DT.

The at least one capacitor can include a storage capacitor Cst configured to maintain a constant voltage during a display frame or a certain period of the display frame.

To drive one or more subpixels SP, at least one data signal VDATA, which is an image signal, and at least one scan signal SC, which is a gate signal, can be applied to the one or more subpixels SP. Further, a common pixel driving voltage including a first common driving voltage VDD and a second common driving voltage VSS can be applied to the one or more subpixels SP.

In one or more embodiments, the light emitting element ED can be an organic light emitting diode, an inorganic material-based light emitting diode, a quantum dot light emitting diode, a micro light emitting diode, a mini light emitting diode, or the like. For example, in an example where the light emitting element ED is an organic light emitting diode (OLED), a light emitting element intermediate layer EL of the light emitting element ED can include an organic material.

The driving transistor DT can be a transistor configured to supply a driving current to the light emitting element ED. The driving transistor DT can be connected between a first common driving voltage line VDDL and the light emitting element ED.

1 2 3 The driving transistor DT can include a first node Nelectrically connected with the light emitting element ED, a second node Nto which a data signal VDATA is applied, and a third node Nto which a driving voltage VDD from a driving voltage line DVL (e.g., the first common driving voltage line VDDL) is applied.

2 1 3 1 2 3 In the driving transistor DT, the second node Ncan be a gate node, the first node Ncan be a source node or a drain node, and the third node Ncan be the drain node or the source node. Hereinafter, for merely convenience of explanation, discussions can be provided based on examples where the first, second, and third nodes (N, N, and N) of the driving transistor DT are source, gate, and drain nodes, respectively. However, embodiments of the present disclosure are not limited thereto.

2 FIG. 2 The scan transistor ST included in the subpixel circuit SPC illustrated incan be a switching transistor for allowing a data signal VDATA, which is an image signal, to be supplied to the second node N, which is the gate node of the driving transistor DT. ​

2 2 The scan transistor ST can be turned on or turned off by a scan signal SC, which is a type of gate signal, applied through a scan line SCL, which is a type of gate line GL, and control an electrical connection between the second node Nof the driving transistor DT and a data line DL. The drain electrode or source electrode of the scan transistor ST can be electrically connected to the data line DL. The source electrode or drain electrode of the scan transistor ST can be electrically connected to the second node Nof the driving transistor DT. The gate electrode of the scan transistor ST can be electrically connected to the scan line SCL.

1 2 1 1 2 2 The storage capacitor Cst can be electrically connected between the first node Nand the second node Nof the driving transistor DT. The storage capacitor Cst can include a first capacitor electrode electrically connected to the first node Nof the driving transistor DT or corresponding to the first node Nof the driving transistor DT, and a second capacitor electrode electrically connected to the second node Nof the driving transistor DT or corresponding to the second node Nof the driving transistor DT.​

1 2 In one or more aspects, the storage capacitor Cst, which can be present between the first node Nand the second node Nof the driving transistor DT, can be an external capacitor intentionally configured or designed to be located outside of the driving transistor DT, other than internal capacitors, such as parasitic capacitors (e.g., a gate-to-source capacitance Cgs, a gate-to-drain capacitance Cgd, and the like).

Each of the driving transistor DT and the scan transistor ST can be an n-type transistor or a p-type transistor.

110 The display panelcan have a top emission structure or a bottom emission structure.

110 110 In an example where the display panelhas the top emission structure, at least a portion of the subpixel circuit SPC can overlap with at least a portion of the light emitting element ED in the vertical direction. In an example where the display panelhas the bottom emission structure, the subpixel circuit SPC may not overlap the light emitting element ED in the vertical direction.

The subpixel circuit SPC can include two transistors (2T: DT and ST) and one capacitor (1C: Cst) (which can be referred to as a “2T1C structure”), and in one or more aspects, can further include one or more transistors, or further include one or more capacitors.

For example, the subpixel circuit SPC can have an 8T1C structure including 8 transistors and 1 capacitor. In another example, the subpixel circuit SPC can have an 6T2C structure including 6 transistors and 2 capacitor. In further another example, the subpixel circuit SPC can have an 7T1C structure including 7 transistors and 1 capacitor.

The types and number of gate signals supplied to a subpixel SP, and/or the types and number of gate lines connected to the subpixel SP can vary depending on a structure of a corresponding subpixel circuit SPC.

Further, the types and number of common pixel driving voltages supplied to a subpixel SP can vary depending on a structure of a corresponding subpixel circuit SPC.

3 4 5 FIGS.,, and 300 illustrate an example light emitting element transfer apparatusconfigured to transfer light emitting elements ED according to aspects of the present disclosure.

3 FIG. 300 300 111 111 In one or more example embodiments,schematically illustrates a light emitting element transfer apparatus. The light emitting element transfer apparatuscan transfer light emitting elements ED onto a substrate. Herein, transferring the light emitting elements ED can mean arranging the light emitting elements ED on the substrate.

3 FIG. 111 1 2 1 2 Referring to, the substratecan include a first pixel area PXLAand a second pixel area PXLA. The first pixel area PXLAand the second pixel area PXLAcan be areas where a plurality of light emitting elements ED are arranged.

3 FIG. 1 1 1 1 1 1 1 300 300 1 300 111 1 a b c a b c The example ofillustrates that first light emitting elements (ED, ED, and ED) are arranged in the first pixel area PXLA. The first light emitting elements (ED, ED, and ED) are light emitting elements ED transferred by the light emitting element transfer apparatus. For example, after the light emitting element transfer apparatusis located on the first pixel area PXLA, the light emitting element transfer apparatuscan move close to the substrateand transfer the light emitting elements ED in the first pixel area PXLA.

1 1 1 300 111 300 111 300 2 1 2 a b c After the first light emitting elements (ED, ED, and ED) are transferred, the light emitting element transfer apparatuscan move away from the substrate. For example, the light emitting element transfer apparatuscan be spaced apart from the substrate. Thereafter, the light emitting element transfer apparatuscan move along a second direction Dfrom the first pixel area PXLAto the second pixel area PXLA.

300 111 2 2 2 2 300 a b c The light emitting element transfer apparatuscan be spaced apart from the substrateand be located on the second pixel area PXLA. In this situation, second light emitting elements (ED, ED, and ED) can be held in a lower portion of the light emitting element transfer apparatus.

300 111 1 2 2 2 2 300 a b c As the light emitting element transfer apparatusmoves close to the substratein a first direction D, the second light emitting elements (ED, ED, and ED) can be transferred in the second pixel area PXLA. A plurality of light emitting elements ED can be stored or stacked inside the light emitting element transfer apparatus. This will be described below.

4 5 FIGS.and 4 FIG. 5 FIG. 2 FIG. 300 Referring to, the light emitting element transfer apparatuscan include a plurality of hole areas HA. Referring to, a plurality of hole areas HA can be arranged in a row. Referring to, a plurality of hole areas HA can be arranged in a matrix form. A plurality of light emitting elements ED, each of which can be the light emitting element ED illustrated in, can be stacked inside of the plurality of hole areas HA.

The plurality of hole areas HA can have a circular shape. However, aspects of the present disclosure are not limited thereto. For example, the plurality of hole areas HA can have various shapes such as rectangles, squares, or the like.

300 300 111 The plurality of hole areas HA can be areas where light emitting elements ED are stacked or stored, and areas where locations of the light emitting elements ED are controlled. The light emitting element transfer apparatuscan control the locations of the light emitting elements ED by forming or removing electric field in the plurality of hole areas HA. The light emitting element transfer apparatuscan transfer the light emitting elements ED onto the substrateby controlling the locations of the light emitting elements ED.

4 FIG. 5 FIG. 4 5 FIGS.and 5 FIG. 300 300 300 300 300 300 Referring to, the light emitting element transfer apparatuscan transfer a plurality of light emitting elements ED in a row. Referring to, the light emitting element transfer apparatuscan transfer a plurality of light emitting elements ED to multiple locations simultaneously. The structures of the light emitting element transfer apparatusesillustrated inare only examples, and the plurality of hole areas HA located in the light emitting element transfer apparatusescan be designed in various forms or patterns. Hereinafter, for convenience of explanation, the structure of the light emitting element transfer apparatuswill be described based on the light emitting element transfer apparatusesillustrated in.

5 FIG. shows area A-B and area C-D. Hereinafter, a cross-sectional view of area A-B will be described.

6 13 FIGS.to 5 FIG. are example cross-sectional views taken along line A-B in.

6 FIG. 300 310 320 330 320 623 620 330 633 630 Referring to, the light emitting element transfer apparatusescan include an injection part, a stack part, and an output part. The stack partcan include a light emitting element stack section, and a stack control section. The output partcan include an insulation section, and a transfer output section.

300 310 623 620 633 630 310 623 620 633 630 The light emitting element transfer apparatuscan include an injection part, a light emitting element stack section, a stack control section, an insulation section, and a transfer output section. When viewed based on the cross-sectional view taken along line A-B, hole areas HA can be included inside of the injection part, the light emitting element stack section, the stack control section, the insulation section, and the transfer output section, respectively.

630 300 630 631 632 631 632 The transfer output sectioncan be located at a lowest portion of the light emitting element transfer apparatus. The transfer output sectioncan include a transfer positive output sectionand a transfer negative output section. A fifth hole area HA5 can be located between the transfer positive output sectionand the transfer negative output section.

631 632 631 632 631 632 The transfer positive output sectioncan be in a positive voltage state. The transfer negative output sectioncan be in a negative voltage state. Therefore, an electric field can be formed between the transfer positive output sectionand the transfer negative output section. Electric force lines of the electric field can be directed from the transfer positive output sectionto the transfer negative output section.

630 631 632 631 632 631 632 The transfer output sectioncan form an electric field in the fifth hole area HA5. For example, the transfer positive output sectioncan be an electrode to which a positive voltage is applied. The transfer negative output sectioncan be an electrode to which a negative voltage is applied. When a positive voltage is supplied to the transfer positive output sectionand a negative voltage is supplied to the transfer negative output section, an electric field can be formed between the transfer positive output sectionand the transfer negative output section.

630 5 631 631 5 632 632 3 631 632 631 632 The transfer output sectioncan form an electric field in the fifth hole area HA. For example, the transfer positive output sectioncan be a silicon layer doped negatively. The transfer positive output sectioncan be silicon to which phosphorus, arsenic, and/or the like corresponding to groupare added. The transfer negative output sectioncan be a silicon layer doped positively. The transfer negative output sectioncan be silicon to which boron, aluminum, and/or the like corresponding to groupare added. When a positive voltage is supplied to the transfer positive output sectionand a negative voltage is supplied to the transfer negative output section, an electric field can be formed between the transfer positive output sectionand the transfer negative output section.

633 630 633 633 630 620 4 633 633 6 FIG. The insulation sectioncan be placed on the transfer output part. The insulation sectioncan include an organic material or an inorganic material. The insulation sectioncan electrically insulate the transfer output sectionand the stack control section. When viewed based on the cross-sectional view illustrated in, a fourth hole area HAcan be located between a left portion of the insulation sectionand a right portion of the insulation section.

620 633 620 621 622 621 631 622 632 3 621 622 The stack control sectioncan be disposed on the insulation section. The stack control sectioncan include a stack positive control sectionand a stack negative control section. The characteristics of the stack positive control sectioncan be substantially the same as the characteristics of the transfer positive output section. The characteristics of the stack negative control sectioncan be substantially the same as the characteristics of the transfer negative output section. A third hole area HAcan be located between the stack positive control sectionand the stack negative control section.

620 3 621 622 621 622 621 622 The stack control sectioncan form an electric field in the third hole area HA. For example, the stack positive control sectioncan be an electrode to which a positive voltage is applied. The stack negative control sectioncan be an electrode to which a negative voltage is applied. When a positive voltage is supplied to the stack positive control sectionand a negative voltage is supplied to the stack negative control section, an electric field can be formed between the stack positive control sectionand the stack negative control section.

620 3 621 621 5 622 622 3 621 622 621 622 The stack control sectioncan form an electric field in the third hole area HA. For example, the stack positive control sectioncan be a silicon layer doped negatively. The stack positive control sectioncan be silicon to which phosphorus, arsenic, and/or the like corresponding to groupare added. The stack negative control sectioncan be a silicon layer doped positively. The stack negative control sectioncan be silicon to which boron, aluminum, and/or the like corresponding to groupare added. When a positive voltage is supplied to the stack positive control sectionand a negative voltage is supplied to the stack negative control section, an electric field can be formed between the stack positive control sectionand the stack negative control section.

623 620 623 623 623 623 2 623 623 2 6 FIG. The light emitting element stack sectioncan be disposed on the stack control section. The light emitting element stack sectioncan be in an electrically neutral state. The light emitting element stack sectioncan include an organic material. For example, the light emitting element stack sectioncan include a silicon material. The light emitting element stack sectioncan be a layer in which a plurality of light emitting elements ED are stacked. When viewed based on the cross-sectional view illustrated in, a second hole area HAcan be located between a left portion of the light emitting element stack sectionand a right portion of the light emitting element stack section. A plurality of light emitting elements ED can be located in the second hole area HA.

310 623 310 611 612 611 631 612 632 611 612 The injection partcan be placed on the light emitting element stack section. The injection partcan include a positive injection sectionand a negative injection section. The characteristics of the positive injection sectioncan be substantially the same as the characteristics of the transfer positive output section. The characteristics of the negative injection sectioncan be substantially the same as the characteristics of the transfer negative output section. A first hole area HA1 can be located between the positive injection sectionand the negative injection section.

310 1 611 612 611 612 611 612 The injection partcan form an electric field in the first hole area HA. For example, the positive injection sectioncan be an electrode to which a positive voltage is applied. The negative injection sectioncan be an electrode to which a negative voltage is applied. When a positive voltage is supplied to the positive injection sectionand a negative voltage is supplied to the negative injection section, an electric field can be formed between the positive injection sectionand the negative injection section.

310 1 611 611 5 612 612 3 611 612 611 612 The injection partcan form an electric field in the first hole area HA. For example, the positive injection sectioncan be a silicon layer doped negatively. The positive injection sectioncan be silicon to which phosphorus, arsenic, and/or the like corresponding to groupare added. The negative injection sectioncan be a silicon layer doped positively. The negative injection sectioncan be silicon to which boron, aluminum, and/or the like corresponding to groupare added. When a positive voltage is supplied to the positive injection sectionand a negative voltage is supplied to the negative injection section, an electric field can be formed between the positive injection sectionand the negative injection section.

2 1 1 1 1 1 1 1 1 1 The diameter Dof an upper portion of the first hole area HAcan be greater than the diameter Dof a lower portion of the first hole area HA. In the first direction D, a portion of the first hole area HAcan have a shape in which the diameter of the first hole area HAis gradually reduced from top to bottom. For example, a half (e.g., an upper portion) of the first hole area HAcan have an inverted cone shape, and the other half (e.g., a lower portion) thereof can have a cylindrical shape. Due to the shape of the first hole area HA, light emitting elements ED can be more easily injected into the first hole area HA.

7 FIG. 611 612 611 612 Referring to, an electric field can be formed between the positive injection sectionand the negative injection section. The electric force lines of the electric field can be directed from the positive injection sectionto the negative injection section.

1 1 1 300 300 At least one first light emitting element EDcan be moved to the first hole area HA. In one or more aspects, the first light emitting element EDcan be inserted into the light emitting element transfer apparatusby an inkjet method, a dropper method, or the like. In one or more aspects, a solution containing a plurality of light emitting elements ED can be injected into the light emitting element transfer apparatus. For example, the solution can be ethylene glycol, or the like.

1 The first light emitting element EDcan include an emission layer, a first electrode, and a second electrode. The emission layer can emit light, and the first electrode and the second electrode can be disposed on a side of the emission layer. The emission layer can include an upper surface and a lower surface. A portion of the emission layer in which the first electrode and the second electrode are disposed can be the lower surface of the emission layer, and the opposite side thereof can be the upper surface.

1 1 1 1 When the first light emitting element EDis moved close to the first hole area HA, the first electric field can electrically affect the first electrode and the second electrode. Accordingly, the first electrode and the second electrode can be located closer to the first electric field than the emission layer. In a situation where the first electrode and the second electrode are located closer to the first electric field than the emission layer, the first light emitting element EDcan move into the first hole area HA.

8 FIG. 1 2 1 1 1 1 310 1 1 2 Thereafter, referring to, the first light emitting element EDcan enter into the second hole area HA. When the lower surface EDus of the first light emitting element EDlocated in the first hole area HAfaces downward in the first direction D, the first electric field formed in the injection partcan be removed. Accordingly, the first light emitting element EDcan move from the first hole area HAto the second hole area HA.

1 1 1 1 1 1 2 1 623 us For example, the first electrode and the second electrode of the first light emitting element EDcan face downward in the first direction D. In this example, the lower surface EDof the first light emitting element EDcan face downward in the first direction D. The first light emitting element EDcan be located in the second hole area HA. This can be expressed as the first light emitting element EDbeing stacked in the light emitting element stack section.

2 1 2 1 2 2 2 1 1 1 1 2 2 2 us us us 7 FIG. 8 FIG. At least one second light emitting element EDcan be moved to the first hole area HA. When the second light emitting element EDis moved close to the first hole area HA, the first electric field can affect the second light emitting element ED. Accordingly, a lower surface EDof the second light emitting element EDcan face downward in the first direction D. Referring to, the lower surface EDof the first light emitting element EDcan be tilted to the right, and therefore, the first light emitting element EDcan rotate to the right. Referring to, the lower surface EDof the second light emitting element EDcan be tilted to the left, and therefore, the second light emitting element EDcan rotate to the left.

9 FIG. 2 1 2 1 620 Referring to, the second light emitting element EDcan pass through the first hole area HAand enter the second hole area HA. In this situation, the first light emitting element EDcan be located in the stack control section.

2 621 622 621 622 1 1 1 620 us A second electric field Ecan be formed between the stack positive control sectionand the stack negative control section. The electric force lines of the second electric field can be from the stack positive control sectionto the stack negative control section. The second electric field can electrically affect the lower surface EDof the first light emitting element ED, and therefore, the first light emitting element EDcan be held in the stack control section.

3 310 1 620 2 623 3 310 3 3 1 us A third light emitting element EDcan be moved toward the injection part. In this situation, the first light emitting element EDcan be located in the stack control section, the second light emitting element EDcan be located in the light emitting element stack section, and the third light emitting element EDcan be located close to the injection part. The third light emitting element EDcan be rotated so that a lower surface EDfaces downward by the first electric field E.

10 FIG. 10 FIG. 3 1 2 1 620 2 3 623 310 th Referring to, the third light emitting element EDcan pass through the first hole area HAand move to the second hole area HA. Referring to, the first light emitting element EDcan be located in the stack control section, and the second light emitting element EDand the third light emitting element EDcan be located in the light emitting element stack section. The above-described processes can be repeated, and an nlight emitting element EDn can be located in the injection part.

620 623 Through the second electric field formed in the stack control section, light emitting elements ED can be sequentially stacked in the light emitting element stack section.

11 FIG. 11 FIG. 620 3 630 630 630 631 630 632 620 630 1 630 2 620 3 623 th Referring to, in a situation where the second electric field of the stack control sectionis formed, a third electric field Ecan be formed in the transfer output section. The electric force lines of the third electric field of the transfer output sectioncan be directed from the transfer positive output sectionto the transfer negative output section. Referring to, when the second electric field is removed from the stack control sectionand the third electric field is formed in the transfer output section, the first light emitting element EDcan be located in the transfer output section. In this situation, the second light emitting element EDcan be located in the stack control section, and the third light emitting element EDto the nlight emitting element EDn can be located in the light emitting element stack section.

12 FIG. 630 1 1 1 630 2 620 1 630 630 2 620 Referring to, the third electric field of the transfer output sectioncan be removed, and as the third electric field is removed, the first light emitting element EDcan move downward in the first direction D. Even when the first light emitting element EDmoves downward from the transfer output section, the second light emitting element EDcan be located in the stack control section. For example, even when the first light emitting element EDlocated in the transfer output sectionmoves under from the transfer output section, the second light emitting element EDcan be still held in the stack control section.

13 FIG. 630 620 2 630 3 620 Referring to, the third electric field can be formed again in the transfer output section, and thereafter, the second electric field of the stack control sectioncan be removed for a while. Thereby, the second light emitting element EDcan be located in the transfer output section, and the third light emitting element EDcan be located in the stack control section.

6 13 FIGS.to 300 300 111 Referring to, it has been described that the locations of a plurality of light emitting elements ED can be controlled by the light emitting element transfer apparatus. Hereinafter, examples in which light emitting elements ED are transferred from the light emitting element transfer apparatusonto the substratewill be described.

14 15 FIGS.and 111 300 illustrate example transferring of light emitting elements ED onto the substratein the light emitting element transfer apparatusaccording to aspects of the present disclosure.

14 FIG. 5 FIG. 14 FIG. 300 111 110 Particularly,illustrates a cross-sectional view of area C-D in the light emitting element transfer apparatusillustrated in. Further,illustrates a portion of the substratein area E-F of the display panel.

14 FIG. 14 FIG. 1 13 630 14 26 620 Referring to, first to thirteenth light emitting elements (EDto ED) can be located in the transfer output section, and fourteenth to twenty-sixth light emitting elements (EDto ED) can be located in the stack control section. Referring to, respective numbers of the light emitting elements ED is written on the light emitting elements ED.

630 1 3 7 9 13 111 4 6 10 12 111 Electric field can be removed from some of a plurality of transfer output sections, and thereby, the first to third light emitting elements (EDto ED), the seventh to ninth light emitting elements (EDto ED), and the thirteenth light emitting element EDcan be transferred onto the substrate. In this situation, for an appropriate spacing between pixels, the fourth to sixth light emitting elements (EDto ED) and the tenth to twelfth light emitting elements (EDto ED) may not be transferred onto the substrate.

15 FIG. 15 FIG. 111 110 4 6 10 12 111 illustrates a portion of the substratein area G-H of the display panel. Referring to, the fourth to sixth light emitting elements (EDto ED) and the tenth to twelfth light emitting elements (EDto ED) can be transferred onto the substrate.

14 16 20 22 26 630 17 19 23 25 620 Thereafter, the fourteenth to sixteenth light emitting elements (EDto ED) and the twentieth to twenty-second light emitting elements (EDto ED), and the twenty-sixth light emitting element EDcan be located in the transfer output section. Further, the seventeenth to nineteenth light emitting elements (EDto ED) and the twenty-third to twenty-fifth light emitting elements (EDto ED) can be located in the stack control section.

300 111 310 310 623 620 623 620 620 620 111 The foregoing discussions can be summarized as follows. A control device (e.g., the light emitting element transfer apparatus) can transfer light emitting elements ED onto the substrate. A plurality of light emitting elements ED can be stacked in the control device. Light emitting elements ED can be injected into the control device through the injection part, and the locations of the light emitting elements ED can be aligned through the injection part. The plurality of light emitting elements ED can be stacked in the light emitting element stack section. Further, one light emitting element ED can be located in the stack control section, and the light emitting elements ED located in the light emitting element stack sectioncan be located inside of the control device through the light emitting element ED located in the stack control section. In a situation where the light emitting element ED is located in the stack control section, as electric field is removed in the stack control section, the light emitting element ED can be transferred onto the substrate.

310 1 300 The injection partof the control device can easily align and stack a plurality of light emitting elements ED so that the lower surfaces of the light emitting elements ED face downward in the first direction D. Accordingly, the light emitting elements ED can be easily stacked inside of the light emitting element transfer apparatus.

16 FIG. is a flowchart of a method of driving a light emitting element transfer apparatus according to aspects of the present disclosure.

16 FIG. 1610 1 310 1 310 1 1 Referring to, in a light emitting element injection step S, the first electric field Eis formed by the element injection partto hold the first light emitting element EDamong the plurality of light emitting elements ED in the element injection part. The lower portion of the first light emitting element EDfaces a specific direction by the first electric field E.

1620 2 320 1 310 1 320 320 In a light emitting element stacking step S, the second electric field Eis formed by the stack partlocated under the element injection part and the first electric field Eis removed by the element injection partsuch that the first light emitting element EDmoves into the stack partand is held therein. The plurality of light emitting elements ED are stacked in the stack part.

1630 3 330 310 2 320 1 330 2 320 2 In a first transfer preparation step S, the third electric field Eis formed by the output partlocated under the element injection partand the second electric filed Eis removed by the stack partsuch that the first light emitting element EDmoves into the output partand is held therein. The second light emitting element EDamong the plurality of light emitting elements ED is located in the stack partby the second electric field Eformed again.

1640 3 330 1 In a transfer step S, the third electric field Eis removed by the output partsuch that the first light emitting element EDis transferred onto a substrate.

1650 2 330 3 3 320 2 In a second transfer preparation step S, the second light emitting element EDis located in the output partby the third electric field Eformed again, and the third light emitting element EDamong the plurality of light emitting elements ED is located in the stack partby the second electric field Eformed again.

300 The examples, aspects, and embodiments for the light emitting element transfer apparatusdescribed herein can be described as follows.

According to the one or more example embodiments described herein, a light emitting element transfer apparatus can include a plurality of injection parts into which a plurality of light emitting elements are respectively injected, a plurality of stack parts corresponding respectively to the plurality of injection parts and allowing the plurality of light emitting elements respectively injected into the plurality of injection parts to be stacked, and a plurality of output parts corresponding respectively to the plurality of stack parts and outputting sequentially the plurality of light emitting elements stacked in the plurality of stack parts.

In one or more aspects, each of the plurality of injection parts can include a positive injection section, a negative injection section, and an element injection section including a first hole area located between the positive injection section and the negative injection section. In one or more aspects, each of the plurality of stack parts can include a light emitting element stack section disposed under the element injection section and including a second hole area located under the first hole area, and a stack control section including a stack positive control section, a stack negative control section, and a third hole area located between the stack positive control section and the stack negative control section. In one or more aspects, each of the plurality of output parts can include an insulation section located under the stack control section, including a fourth hole area located under the third hole area, and including an insulating material, and a transfer output section including a transfer positive output section, a transfer negative output section, and a fifth hole area located between the transfer positive output section and the transfer negative output section.

In one or more aspects, each of the plurality of injection parts can enable a first electric field to form between the positive injection section and the negative injection section. In one or more aspects, the stack control section can enable a second electric field to form between the stack positive control section and the stack negative control section. In one or more aspects, the transfer output section can enable a third electric field to form between the transfer positive output section and the transfer negative output section.

In one or more aspects, each of the plurality of injection parts can form the first electric field to enable at least one first light emitting element among the plurality of light emitting elements to rotate, and enable a lower portion of the first light emitting element to face a first direction. For example, the first direction can be a direction from the first hole area to the second hole area.

In one or more aspects, each of the plurality of injection parts removes the first electric field after the lower portion of the first light emitting element is placed to face the first direction, such that the first light emitting element can be located in the second hole area of the light emitting element stack section.

In one or more aspects, when the first light emitting element is located in the second hole area, at least one second light emitting element among the plurality of light emitting elements can be located in the first hole area of the element injection section.

In one or more aspects, the stack control section forms the second electric field to hold the first light emitting element in the third hole area when the first light emitting element moves to the third hole area from the second hole area.

In one or more aspects, the second light emitting element can be located on the first light emitting element located in the third hole area, and the second light emitting element and the third light emitting element among the plurality of light emitting elements can be located in the second hole area of the light emitting element stack section.

In one or more aspects, the transfer output section can form the third electric field, and after the transfer output section has formed the third electric field, the stack control section can remove the second electric field.

In one or more aspects, the first light emitting element can be located in the fifth hole area by the third electric field, and the second light emitting element can be located in the third hole area by the second electric field formed again by the stack control section.

In one or more aspects, the transfer output section can remove the third electric field such that the first light emitting element is transferred onto a substrate in the first direction from the transfer output section, and when the third electric field is removed by the transfer output section, the stack control section can maintain the second electric field, such that the second light emitting element is held in the third hole area.

In one or more aspects, the transfer output section can form the third electric field again, and the stack control section removes the second electric field again, such that the second light emitting element can be located in the fifth hole area of the transfer output section.

In one or more aspects, the positive injection section can be an electrode to which a first voltage is applied, and the negative injection section can be an electrode to which a second voltage less than the first voltage is applied.

In one or more aspects, the positive injection section can include a silicon material doped with a first type, and the negative injection section can include a silicon material doped with a second type different from the first type. In one or more aspects, when the first voltage is supplied to the positive injection section and the second voltage having a lower voltage level than the first voltage is supplied to the negative injection section, the element injection section can form the first electric field in the first hole area.

In one or more aspects, a diameter of an upper portion of the first hole area can be greater than a diameter of a lower portion of the first hole area, and the diameter of the upper portion is gradually reduced from top to bottom.

According to the one or more example embodiments described herein, a method of driving a light emitting element transfer apparatus can include a light emitting element injection step of forming a first electric field by an element injection part to hold a first light emitting element among a plurality of light emitting elements in the element injection part, a light emitting element stacking step of forming a second electric field by an stack part located under the element injection part and removing the first electric field by the element injection part such that the first light emitting element moves into the stack part and is held therein, a first transfer preparation step of forming a third electric field by an output part located under the element injection part and removing the second electric field by the stack part such that the first light emitting element moves into the output part and is held therein, and a transfer step of removing the third electric field by the output part such that the first light emitting element is transferred onto a substrate.

In one or more aspects, in the light emitting element injection step, a lower portion of the first light emitting element can be caused to face a specific direction by the first electric field.

In one or more aspects, in the light emitting element stacking step, the plurality of light emitting elements can be stacked in the stack part.

In one or more aspects, in first transfer preparation step, at least one second light emitting element among the plurality of light emitting elements can be located in the stack part by the second electric field formed again.

In one or more aspects, the method further including a second transfer preparation step performed after the transfer step, and in the second transfer preparation step, the second light emitting element can be located in the output part by the third electric field formed again, and at least one third light emitting element among the plurality of light emitting elements can be located in the stack part by the second electric field formed again.

The above description has been presented to enable any person skilled in the art to make, use and practice the technical features of the present invention, and has been provided in the context of a particular application and its requirements as examples. Various modifications, additions and substitutions to the described embodiments will be readily apparent to those skilled in the art, and the principles described herein can be applied to other embodiments and applications without departing from the scope of the present invention. The above description and the accompanying drawings provide examples of the technical features of the present invention for illustrative purposes only. For example, the disclosed embodiments are intended to illustrate the scope of the technical features of the present invention.