Method of Obtaining Prediction Model, Information Processing Apparatus, Article Manufacturing Method, and Non-Transitory Computer-Readable Storage Medium

The present disclosure relates to a method of obtaining a prediction model, an information processing apparatus, an article manufacturing method, and a non-transitory computer-readable storage medium.

In recent years, improvement in overlay accuracy is demanded in the exposure step of a semiconductor process. For example, for some users, the allowable value for fluctuation of magnification caused by exposure heat within a lot is 0.100 ppm or less. To achieve this, for example, closed correction for performing calibration within a lot is executed. However, closed correction leads to degradation of productivity.

Therefore, a technique of executing open correction has been proposed that uses a prediction model to predict fluctuation of the dynamic imaging characteristics of a projection optical system, which is caused by exposure heat, for each exposure condition (see patent literature 1). To perform optimal prediction in open correction, it is necessary to wait until the influence of exposure heat on the projection optical system disappears (cooling) before measuring the imaging characteristics during exposure. Japanese Patent Laid-Open No. 2013-115348 discloses a technique for, when predicting the fluctuation of imaging characteristics, accurately obtaining the fluctuation amount of imaging characteristics by calculating the fluctuation amount (exposure coefficient) corresponding to the wavelength band of exposure light.

However, as in the conventional technique, optimizing the prediction model by measuring the imaging characteristics during exposure for each exposure condition after cooling degrades productivity. To suppress degradation of productivity, it is conceivable to apply a prediction model optimized in one apparatus to another apparatus, but this cannot avoid a decrease in accuracy (prediction accuracy) of predicting the fluctuation of imaging characteristics.

The present disclosure provides a technique advantageous in obtaining a prediction model for predicting the fluctuation of the imaging characteristics of a projection optical system.

According to one aspect of the present disclosure, there is provided a method of obtaining a prediction model for predicting fluctuation of imaging characteristics of a projection optical system which is used in an exposure apparatus that exposes a substrate via an original, the method including setting a first value, which is a value of a first coefficient in a first prediction model that is set based on a result of measuring fluctuation of imaging characteristics of a first projection optical system in a first exposure apparatus including the first projection optical system, as a value of the first coefficient in a second prediction model for predicting fluctuation of imaging characteristics of a second projection optical system in a second exposure apparatus including the second projection optical system, while temporarily setting a value of a second coefficient in the second prediction model to a default value, acquiring a measurement value by measuring fluctuation of imaging characteristics of the second projection optical system while performing correction based on a prediction value which is obtained by predicting fluctuation of imaging characteristics of the second projection optical system using the second prediction model set in the setting, and setting a value of the second coefficient in the second prediction model to a second value, which is a value of the second coefficient in the second prediction model, obtained based on a measurement value acquired in the acquiring, wherein the second exposure apparatus is an apparatus of the same type as the first exposure apparatus.

Further aspects of the present disclosure will become apparent from the following description of exemplary embodiments with reference to the attached drawings.

Embodiments will be described in detail below with reference to the accompanying drawings. Note that the following embodiments do not limit the claims. A plurality of features are described in the embodiments, but not all the features are essential, and a plurality of features may be arbitrarily combined. In the accompanying drawings, the same reference numerals denote the same or similar parts and a repetitive description thereof will be omitted.

1 FIG. 1 1 1 is a schematic view illustrating configurations of an exposure apparatusaccording to an aspect of the present disclosure. The exposure apparatusis a lithography apparatus that is used for the photolithography process as the manufacturing process of a device such as a semiconductor device or flat panel display (FPD), and forms a pattern on a substrate. The exposure apparatustransfers the pattern of an original to a substrate by exposing the substrate via the original.

1 1 In this embodiment, the exposure apparatusis implemented as a scanning exposure apparatus (scanner) that transfers the pattern of an original to a substrate while synchronously scanning the original and the substrate in the scanning direction (that is, by a step-and-scan method). Note that the exposure apparatusmay be implemented as an exposure apparatus (stepper) that transfers the pattern of an original to a substrate while stopping the original and the substrate (that is, by a step-and-repeat method).

In this specification and the accompanying drawings, an XYZ coordinate system is defined such that the horizontal plane is the X-Y plane, and the vertical direction is the Z-axis direction. Directions respectively parallel to the X-axis, the Y-axis, and the Z-axis in the XYZ coordinate system will be defined as the X direction, the Y direction, and the Z direction. A rotation about the X-axis, a rotation about the Y-axis, and a rotation about the Z-axis will be defined as θX, θY, and θZ, respectively. The X-Y plane is a plane parallel to the plane on which the substrate is arranged. The Z direction is a direction coincident with the optical axis of the projection optical system.

1 FIG. 1 102 104 101 106 104 1 107 104 110 111 110 120 As illustrated in, the exposure apparatusincludes an illumination optical systemthat illuminates an originalwith light from a light source, and an original stagethat holds the original. The exposure apparatusalso includes a projection optical systemthat projects the pattern of the originalonto a substrate, a substrate stagethat holds the substrate, and a control unit.

101 102 103 104 104 110 104 110 107 104 110 The light from the light sourceenters the illumination optical system, generates a desirable effective light source distribution via a diffraction optical element, and is applied to the original. The light applied to the originalwhere the pattern to be transferred to the substrateis drawn passes through the original, and reaches the substratevia the projection optical system. Thus, the pattern of the originalis reduction-projected onto the substrate.

104 106 106 110 111 111 106 111 The originalis held by the original stage. When performing exposure, the original stageis scan-driven along the Y direction. The substrateis held by the substrate stage. When performing exposure, the substrate stageis scan-driven along the Y direction in a direction opposite to the scan-driving direction of the original stage. When the previous exposure ends, the substrate stageis step-driven for the next exposure.

104 106 105 106 113 113 112 114 111 114 113 115 112 One or both of the originalarranged on the original stageand a reference platearranged on the original stageare provided with an original-side markfor aerial image measurement. The original-side markincludes, for example, a line-and-space pattern where patterns are periodically arranged. On the other hand, a detection plateprovided with a substrate-side markfor aerial image measurement is arranged on the substrate stage. The substrate-side markincludes a line-and-space pattern where patterns are arranged at the same pitch as in the original-side mark. A light detectoris arranged below the detection plate.

113 114 106 101 113 104 105 102 113 114 112 107 114 115 In the line-and-space pattern constituting each of the original-side markand the substrate-side mark, lines are made of chrome, and spaces are made of glass. When measuring an aerial image, the original stageis arranged such that the light from the light sourceis applied to the original-side markprovided in the originalor the reference platevia the illumination optical system. The light having passed through the original-side markreaches the substrate-side markprovided in the detection platevia the projection optical system, passes through the substrate-side mark, and is detected by the light detector.

120 1 120 110 104 110 107 104 110 The control unitis constituted by, for example, an information processing apparatus (computer) including a CPU, a memory, and the like, and comprehensively controls the respective units of the exposure apparatusin accordance with programs stored in a storage unit or the like. The control unitcontrols an exposure process (exposure method) of exposing the substratewhile projecting the pattern of the originalonto the substratevia the projection optical system, that is, transferring the pattern of the originalto the substrate.

101 113 102 113 114 107 111 107 113 114 107 115 114 107 113 114 115 Here, aerial image measurement as a method for measuring an image shift will be described. The light from the light sourceis applied to the original-side markvia the illumination optical system. The light having passed through the original-side markis reduction-projected onto the substrate-side markvia the projection optical system. In this state, the substrate stageis scan-driven in the X direction (the direction orthogonal to the optical axis direction of the projection optical system). With this, the image of the original-side markoverlaps the substrate-side markat the imaging position of the projection optical system, so that the light amount detected by the light detectorbecomes maximum. On the other hand, when the substrate-side markis shifted from the imaging position of the projection optical system, the overlap between the image of the original-side markand the substrate-side markdecreases, so that the light amount detected by the light detectordecreases.

2 FIG. 2 FIG. 2 FIG. 115 113 114 111 107 111 115 115 107 107 1 113 104 is a graph illustrating the change in light amount detected by the light detectorin a case where, while the original-side markis reduction-projected onto the substrate-side mark, the substrate stageis scan-driven in the X direction across the imaging position of the projection optical system. In, the abscissa represents the position (X direction) of the substrate stage, and the ordinate represents the light amount detected by the light detector. With reference to, the light amount detected by the light detectordraws an upward convex curve. The peak position of the curve is set as the imaging position of the projection optical system, and the difference from the reference position is set as an image shift Δ. The reference position is the imaging position when the projection optical systemis in the ideal state. The reference position is set in advance in the exposure apparatus. In this embodiment, the method for measuring the image shift is merely an example, and another method may be used to measure the image shift. By measuring the image shift for each of the original-side marksprovided at two different positions on the originalalong the X direction, the magnification can be obtained from the measurement results of the image shifts and the X-direction span between the two positions converted into the image side. More specifically, when the measurement result of one image shift is ΔXL, the measurement result of the other image shift is ΔXR, and the X-direction span between the two positions is SL, the magnification is obtained by (ΔXL−ΔXR)/SL. In this specification, this measurement will be referred to as magnification measurement.

107 120 1 Prediction of the fluctuation of the imaging characteristics of the projection optical systemcaused by exposure heat (to be referred to as the “exposure history” hereinafter) will be described below. Note that in this embodiment, prediction of the exposure history is assumed to be performed in the control unit, but may be performed in an information processing apparatus outside the exposure apparatus.

1 101 104 102 104 107 110 111 107 107 107 107 107 107 107 In the exposure apparatus, the light (exposure light) from the light sourceis applied to the pattern of the originalvia the illumination optical system, and the light having passed through the originalis imaged, via the projection optical system, on the substrateheld by the substrate stage. When exposure light is applied to the projection optical system, the exposure light is absorbed by the glass material itself of the optical element (such as a lens) constituting the projection optical systemor an anti-reflection film formed on the surface of the optical element. Due to this, the temperature of the optical element constituting the projection optical systemrises, and the optical characteristics, such as the refractive index, of the optical element change. If the optical characteristics of the optical element constituting the projection optical systemchange, the imaging characteristics of the projection optical systemchange. Here, the imaging characteristics of the projection optical systeminclude at least one of magnification, focus, distortion, astigmatism, spherical aberration, comatic aberration, and wave aberration. In this embodiment, magnification will be exemplified to describe the prediction model for the exposure history. The magnification of the projection optical systemcaused by exposure heat will be referred to as the exposure magnification.

110 107 107 113 First, when an exposure process for the first lot is started, magnification measurement is executed before exposure of the leading substrateincluded in the lot to acquire the lot leading magnification, which indicates the magnification of the projection optical systembefore exposure. The lot leading magnification includes the static magnification of the projection optical system, and the arrangement error of the original-side mark.

110 110 107 107 113 Then, after the exposure process for the first lot is started, magnification measurement is executed for each substrateor at the timing of the pre-designated substrate, thereby acquiring the intra-lot magnification, which indicates the exposure magnification (fluctuation thereof) of the projection optical systemwithin the lot. The intra-lot magnification includes the static magnification of the projection optical system, the arrangement error of the original-side mark, and the exposure magnification which fluctuates by exposure.

104 107 113 107 113 Next, when an exposure process using the different originalis started for a lot different from the first lot, magnification measurement is executed as in the first lot, thereby acquiring the lot leading magnification and the intra-lot magnification. The lot leading magnification acquired here includes the static magnification of the projection optical system, the arrangement error of the original-side markdifferent from that in the first lot, and the influence of the exposure magnification in the first lot. The intra-lot magnification includes the static magnification of the projection optical system, the arrangement error of the original-side markdifferent from that in the first lot, and the exposure magnification in the different lot.

110 104 The exposure process for each of a plurality of lots is repeated while executing magnification measurement for each exposure condition. Here, a lot means a series of process units for exposing 25 substrateswhile using a recipe (exposure recipe) including correction coefficients for correcting the exposure load and the exposure history. The recipe indicates the actual user process, and includes exposure conditions in the exposure process, such as the original, the illumination condition, the exposure amount, the shot size (the size of the shot region), the number of shots, and the transmittance of the original 104.

107 With respect to the fluctuation of the magnification of the projection optical systemacquired in this manner, the exposure history is corrected using a prediction model expressed by:

φN=Io−(Io−φN−1)×exp((−1)×heatTime/K)   (1)

0 0 0 0 0 0 Io=Ic×{Dose×mbWy×((1/HeatTime)/slitWy)}/{Dose×Wy×v/slitWy/(slitWy+Wy)}×T/T×(mbWx/Wx)×((exp(c)+exp(−c)))/((exp(c×(mbWx/Wx0))+exp(−c×(mbWx/Wx0))))   (2)

107 107 104 In equations (1) and (2), φ represents the prediction value of the exposure magnification, which is the fluctuation of the imaging characteristics of the projection optical system, N represents the timing of predicting the exposure magnification of the projection optical system, heatTime represents the exposure time, and K represents the time constant. Io represents the exposure load, Dose represents the exposure amount, mbWx and mbWy represent the X-direction aperture width and the Y-direction aperture width, respectively, of the masking blade defining the exposure region, and slitWy represents the design value of the Y-direction width of the exposure region (exposure slit). Dose0 represents the reference exposure amount, Wx0 and Wy0 represent the X-direction width and the Y-direction width, respectively, of the reference exposure region, v0 represents the reference scan speed, T represents the transmittance of the original, and T0 represents the transmittance of a reference original. Ic represents the correction coefficient for correcting the exposure history, that is, the saturation amount at a unit exposure load, and c represents the area-dependent coefficient that indicates the influence on the exposure load relative to the aperture width of the masking blade.

For example, magnification measurements are executed while performing exposure processes on a lot by using one of recipes respectively including three exposure conditions different only in the X-direction aperture width mbWx of the masking blade. Then, based on the lot leading magnification and the intra-lot magnification acquired by magnification measurements, the correction coefficient Ic for correcting the exposure history and the area-dependent coefficient c are set (decided) so as to decrease the difference (residual correction error) between the prediction value of the prediction model and the measurement value. By using the prediction model including the correction coefficient Ic and the area-dependent coefficient c set as described above, even if the aperture width mbWx is different, as long as the remaining exposure conditions are the same between the recipes, the exposure history can be corrected with high accuracy without newly obtaining these coefficients.

3 FIG. 3 FIG. 3 FIG. 3 FIG. is a view illustrating the result of correcting the exposure history using the prediction model expressed by equations (1) and (2).illustrates the residual correction errors corresponding to recipes A, B, C, and D, respectively, that include four exposure conditions different only in the X-direction aperture width mbWx of the masking blade, respectively. In, the abscissa represents the substrate number in the lot, and the ordinate represents the residual correction error. With reference to, it can be seen that this prediction model does not include the correction coefficient Ic and the area-dependent coefficient c optimized for each of the recipes A, B, C, and D, but the residual correction errors are suppressed within ±0.100 ppm, so that the exposure histories are corrected with high accuracy. Note that, to set such a prediction model (the correction coefficient Ic and the area-dependent coefficient c), it is necessary to execute magnification measurements on at least three or more lots. Hence, attempting to optimize the prediction model for each exposure apparatus leads to degradation of productivity.

To suppress degradation of productivity, consider a case where a prediction model optimized (set) for the first exposure apparatus including the first projection optical system, which is one exposure apparatus, is deployed (repurposed) in the second exposure apparatus including the second projection optical system, which is the other exposure apparatus. Note that the first exposure apparatus and the second exposure apparatus are apparatuses of the same type. Apparatuses of the same type are apparatuses manufactured from the same design data (the design data such as the number of optical elements constituting the projection optical system and the refractive indices thereof), more specifically, apparatuses of the same model number or product name.

4 FIG. 3 FIG. 4 FIG. 4 FIG. 4 FIG. is a view illustrating the result of correcting the exposure history by deploying the prediction model optimized for the first exposure apparatus in the second exposure apparatus. Similar to,illustrates the residual correction errors corresponding to the recipes A, B, C, and D, respectively, that include four exposure conditions different only in the X-direction aperture width mbWx of the masking blade, respectively. In, the abscissa represents the substrate number in the lot, and the ordinate represents the residual correction error. With reference to, it can be seen that some residual correction errors exceed 0.100 ppm since the prediction model is not optimized for the second exposure apparatus. This means that it is difficult to deploy the prediction model including the correction coefficient Ic and the area-dependent coefficient c optimized (set) for the first exposure apparatus in the second exposure apparatus intact.

104 Therefore, in this embodiment, the prediction model, which includes only the area-dependent coefficient c out of the correction coefficient Ic and the area-dependent coefficient c optimized (set) in the first exposure apparatus, is deployed in the second exposure apparatus. More specifically, as the prediction model in the second exposure apparatus, the area-dependent coefficient c is set to the area-dependent coefficient c optimized in the first exposure apparatus, and the correction coefficient Ic is temporarily set to a default value defined in the second exposure apparatus. By using this prediction model, magnification measurements are executed while performing exposure processes on a lot in the second exposure apparatus. Based on the lot leading magnification and the intra-lot magnification acquired in the magnification measurements, the correction coefficient Ic for correcting the exposure history is set (decided) so as to decrease the difference (residual correction error) between the prediction value of the prediction model and the measurement value. At this time, as the exposure condition, the transmittance of the originalis set high (for example, 40% or higher) and the X-direction aperture width mbWx of the masking blade is set at middle level (for example, within a range of 20 mm (inclusive) to 22 mm (inclusive)). Note that the area-dependent coefficient c is a coefficient common to different exposure apparatuses, that is, a coefficient (first coefficient) common to the first exposure apparatus (first projection optical system) and the second exposure apparatus (second projection optical system). On the other hand, the correction coefficient Ic is a coefficient dependent on the individual exposure apparatus, that is, a coefficient (second coefficient) specific to each of the first exposure apparatus and the second exposure apparatus.

5 FIG. 3 4 FIGS.and 5 FIG. 5 FIG. 5 FIG. 4 FIG. is a view illustrating the result of correcting the exposure history by using the prediction model including the correction coefficient Ic set in the second exposure apparatus, and the area-dependent coefficient c set in the first exposure apparatus. Similar to,illustrates the residual correction errors corresponding to the recipes A, B, C, and D, respectively, that include four exposure conditions different only in the X-direction aperture width mbWx of the masking blade, respectively. In, the abscissa represents the substrate number in the lot, and the ordinate represents the residual correction error. With reference to, it can be seen that the residual correction errors are suppressed within ±0.100 ppm even for the recipes that have large residual correction errors in, so that the exposure histories are corrected with high accuracy.

1 As described above, in this embodiment, it is possible to set (decide), from the measurement values of magnification measurements for one lot, the correction coefficient Ic having the accuracy similar to that of the correction coefficient Ic set from the measurement values of magnification measurements for at least three or more lots. Hence, in the exposure apparatus, it is possible to correct the exposure history with high accuracy while suppressing degradation of productivity.

6 FIG. 107 120 1 1 107 With reference to, a process of obtaining a prediction model for predicting the fluctuation of the imaging characteristics of the projection optical systemaccording to this embodiment will be described. In this embodiment, the process is assumed to be performed in the control unit, but may be performed in an information processing apparatus outside the exposure apparatus. Here, a description will be given assuming that the exposure apparatusincluding the projection optical systemis the second exposure apparatus including the second projection optical system, and another exposure apparatus including a different projection optical system is the first exposure apparatus including the first projection optical system.

601 1 107 In step S, the second exposure apparatus (exposure apparatus) including the second projection optical system (projection optical system) is set as the apparatus of the same type as the first exposure apparatus including the first projection optical system.

602 603 606 In step S, it is determined whether a prediction model corresponding to the exposure condition of an exposure process to be executed in the second exposure apparatus is set in the first exposure apparatus. More specifically, it is determined whether the area-dependent coefficient c (the first value, which is a value of the first coefficient) in the prediction model (first prediction model) applied to the first exposure apparatus is set based on the result of measuring the fluctuation of the exposure magnification of the first projection optical system in the first exposure apparatus. If the prediction model is set in the first exposure apparatus, the process transitions to step S. If the prediction model is not set in the first exposure apparatus, the process transitions to step S.

603 In step S(first step), the area-dependent coefficient c in the prediction model applied to the first exposure apparatus is set as the area-dependent coefficient c (a value of the first coefficient) in the prediction model (second prediction model) applied to the second exposure apparatus. In addition, the correction coefficient Ic (a value of the second coefficient) in the prediction model applied to the second exposure apparatus is temporarily set to a default value. In this embodiment, the prediction model set with the correction coefficient Ic and the area-dependent coefficient c is acquired from the first exposure apparatus, and the area-dependent coefficient c in this prediction model is deployed as the area-dependent coefficient c in the prediction model applied to the second exposure apparatus.

604 603 603 104 In step S(second step), using the prediction model set in step S, a measurement value is acquired by executing magnification measurement while performing an exposure process on a lot in the second exposure apparatus. More specifically, using the prediction model set in step S, prediction values are obtained by predicting the fluctuation of the magnification of the second projection optical system, and measurement values, that is, a lot leading magnification and an intra-lot magnification, are acquired by measuring the fluctuation of the magnification of the second projection optical system while performing correction based on the prediction values. At this time, as the exposure condition, the transmittance of the originalis set high, and the X-direction aperture width mbWx of the masking blade is set at middle level.

605 604 In step S(third step), the correction coefficient Ic (the second value, which is a value of the second coefficient) is obtained based on the measurement values acquired in step S, and the obtained correction coefficient Ic is set as the correction coefficient Ic in the prediction model applied to the second exposure apparatus in place of the default value.

606 In step S, magnification measurements are executed on at least three or more lots while performing exposure processes using exposure conditions different from each other, thereby obtaining and setting the correction coefficient Ic and the area-dependent coefficient c in the prediction model applied to the second exposure apparatus.

6 FIG. 7 FIG. 7 FIG. 6 FIG. 605 605 701 706 601 606 Note that in, the process of obtaining the prediction model is terminated after step S, but the process of obtaining the prediction model may be continued until the prediction model set in step Sachieves the desired prediction accuracy, as illustrated in. With reference to, a process of obtaining a prediction model that achieves the desired prediction accuracy will be described. Note that steps Sto Sare similar to steps Sto Sillustrated in, respectively, so that a detailed description is omitted here.

707 706 706 704 706 706 708 1 120 In step S(fourth step), using the prediction model set in step S, magnification measurements are executed while performing exposure processes on the lot in the second exposure apparatus, and it is determined whether the residual correction errors are equal to or smaller than a threshold. More specifically, using the prediction model set in step S, the prediction value of the fluctuation of the magnification of the second projection optical system is obtained, and it is determined whether the residual correction error, which is obtained by measuring the fluctuation of the magnification of the second projection optical system while performing correction based on the obtained prediction value, is equal to or smaller than a threshold. At this time, the exposure condition is different from the exposure condition in step S. If the residual correction error is equal to or smaller than the threshold, it is determined that the prediction model set in step Sachieves the desired prediction accuracy, and the process is terminated. On the other hand, if the residual correction error is larger than the threshold, it is determined that the prediction model set in step Sdoes not achieve the desired prediction accuracy, and the process transitions to step S. Note that in this embodiment, the determination as to whether the residual correction error is equal to or smaller than the threshold is made automatically in the exposure apparatus(control unit), but the determination may be made manually by the user.

708 709 710 In step S, it is determined whether the number (required number) of measurement values required to newly set the correction coefficient Ic in the prediction model applied to the second exposure apparatus have been acquired. If the required number of measurement values have not been acquired, the process transitions to step S. If the required number of measurement values have been acquired, the process transitions to step S.

709 706 706 104 In step S(fifth step), using the prediction model set in step S, a measurement value is acquired by executing magnification measurement while performing an exposure process on the lot in the second exposure apparatus. More specifically, using the prediction model set in step S, prediction values are obtained by predicting the fluctuation of the magnification of the second projection optical system, and measurement values, that is, a lot leading magnification and an intra-lot magnification, are acquired by measuring the fluctuation of the magnification of the second projection optical system while performing correction based on the prediction values. At this time, as the exposure condition, the transmittance of the originalis set high, and the X-direction aperture width mbWx of the masking blade is set large (for example, within a range of 26 mm (inclusive) to 30 mm (inclusive)) or small (for example, within a range of 10 mm (inclusive) to 14 mm (inclusive)).

710 710 In step S(fifth step), based on the required number of measurement values, the correction coefficient Ic (the third value, which is a value of the second coefficient) is obtained, and the obtained correction coefficient Ic is set as the new correction coefficient Ic in the prediction model applied to the second exposure apparatus. Note that it is also possible to obtain the area-dependent coefficient c based on the required number of measurement values in step S. Hence, the area-dependent coefficient c may be obtained based on the required number of measurement values, and the obtained area-dependent coefficient c may be set as the new area-dependent coefficient c in the prediction model applied to the second exposure apparatus in place of the area-dependent coefficient c in the prediction model applied to the first exposure apparatus.

107 1 107 120 107 107 In this manner, according to this embodiment, a technique advantageous in obtaining a prediction model for predicting the fluctuation of the imaging characteristics of the projection optical systemis provided and, in the exposure apparatus, the exposure history with high accuracy can be corrected while suppressing degradation of productivity. At this time, as described above, a function of obtaining a prediction model, obtaining a prediction value by predicting the fluctuation of the imaging characteristics of the projection optical systemby using the prediction model, and correcting the fluctuation of the imaging characteristics based on the prediction value is implemented in the control unit. An exposure method including a step of obtaining a prediction model, and a step of correcting the fluctuation of the imaging characteristics of the projection optical systembased on a prediction value obtained by predicting the fluctuation of the imaging characteristics of the projection optical systemby using the prediction model also constitutes one aspect of the present disclosure.

1 An article manufacturing method according to an embodiment of the present disclosure is, for example, suitable to manufacture an article such as a semiconductor device, a liquid crystal display device, a flat panel display, or a MEMS. The manufacturing method includes a step of exposing a substrate applied with a photosensitive material by using the above-described exposure apparatus(exposure method), and a step of developing the exposed photosensitive material. In addition, an etching step, an ion implantation step, or the like is performed on the substrate using the pattern of the developed photosensitive material as a mask to form a circuit pattern on the substrate. By repeating the steps of exposure, developing, etching, and the like, a circuit pattern formed by a plurality of layers is formed on the substrate. In a post-process, dicing (processing) is performed on the substrate bearing the circuit pattern, and chip mounting, bonding, and inspection steps are performed. The manufacturing method can also include other known steps (oxidation, deposition, vapor deposition, doping, planarization, resist removal, and the like). The article manufacturing method according to this embodiment is superior to a conventional method in at least one of the performance, quality, productivity, and production cost of the article.

Embodiment(s) of the present disclosure can also be realized by a computer of a system or apparatus that reads out and executes computer executable instructions (e.g., one or more programs) recorded on a storage medium (which may also be referred to more fully as a ‘non-transitory computer-readable storage medium’) to perform the functions of one or more of the above-described embodiment(s) and/or that includes one or more circuits (e.g., application specific integrated circuit (ASIC)) for performing the functions of one or more of the above-described embodiment(s), and by a method performed by the computer of the system or apparatus by, for example, reading out and executing the computer executable instructions from the storage medium to perform the functions of one or more of the above-described embodiment(s) and/or controlling the one or more circuits to perform the functions of one or more of the above-described embodiment(s). The computer may comprise one or more processors (e.g., central processing unit (CPU), micro processing unit (MPU)) and may include a network of separate computers or separate processors to read out and execute the computer executable instructions. The computer executable instructions may be provided to the computer, for example, from a network or the storage medium. The storage medium may include, for example, one or more of a hard disk, a random-access memory (RAM), a read only memory (ROM), a storage of distributed computing systems, an optical disk (such as a compact disc (CD), digital versatile disc (DVD), or Blu-ray Disc (BD)™), a flash memory device, a memory card, and the like.

While the present disclosure has been described with reference to exemplary embodiments, it is to be understood that the disclosure is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

This application claims the benefit of Japanese Patent application No. 2025-008577 filed on Jan. 21, 2025, which is hereby incorporated by reference herein in its entirety.