Radio Frequency Band Switching in a Power Management Integrated Circuit

This application claims the benefit of U.S. provisional patent application Ser. No. 63/501,279, filed on May 10, 2023, the disclosure of which is hereby incorporated herein by reference in its entirety.

The technology of the disclosure relates generally to a power management integrated circuit (PMIC) configured to adapt a modulated voltage to amplify a radio frequency (RF) signal for transmission in different RF bands.

Fifth generation (5G) new radio (NR) (5G-NR) has been widely regarded as the next generation of wireless communication technology beyond the current third generation (3G) and fourth generation (4G) technologies. In this regard, a wireless communication device capable of supporting the 5G-NR wireless communication technology is expected to achieve higher data rates, improved coverage range, enhanced signaling efficiency, and reduced latency.

Downlink and uplink transmissions in a 5G-NR system are widely based on orthogonal frequency division multiplexing (OFDM) technology. In an OFDM based system, physical radio resources are divided into a number of subcarriers in a frequency domain and a number of OFDM symbols in a time domain. The subcarriers are orthogonally separated from each other by a subcarrier spacing (SCS). The OFDM symbols are separated from each other by a cyclic prefix (CP), which acts as a guard band to help overcome inter-symbol interference (ISI) between the OFDM symbols.

A radio frequency (RF) signal communicated in the OFDM based system is often modulated into multiple subcarriers in the frequency domain and multiple OFDM symbols in the time domain. The multiple subcarriers occupied by the RF signal collectively define a modulation bandwidth of the RF signal. The multiple OFDM symbols, on the other hand, define multiple time intervals during which the RF signal is communicated. In the 5G-NR system, the RF signal is typically modulated with a high modulation bandwidth in excess of 200 MHz.

The duration of an OFDM symbol depends on the SCS and the modulation bandwidth. The table below (Table 1) provides some OFDM symbol durations, as defined by 3G partnership project (3GPP) standards for various SCSs and modulation bandwidths. Notably, the higher the modulation bandwidth is, the shorter the OFDM symbol duration will be. For example, when the SCS is 120 KHz and the modulation bandwidth is 400 MHz, the OFDM symbol duration is 8.93 μs.

TABLE 1 # of OFDM Slot Slots Symbol Modulation SCS Length per CP Duration Bandwidth (KHz) (μs) Subframe (μs) (μs) (MHz) 15 1000 1 4.69 71.43 50 30 500 2 2.34 35.71 100 60 250 4 1.17 17.86 200 120 125 8 0.59 8.93 400

In a 5G-NR system, the RF signal can be modulated with a time-variant power that changes from one OFDM symbol to another. In this regard, a power amplifier circuit(s) is required to amplify the RF signal to a certain power level within each OFDM symbol duration. Such inter-symbol power variation creates a unique challenge for a power management integrated circuit (PMIC) because the PMIC must be able to adapt a modulated voltage supplied to the power amplifier circuit within a very short voltage switching interval (e.g., the CP of each OFDM symbol) to help avoid distortion (e.g., amplitude clipping) in the RF signal.

Further, the PMIC may also need to adapt the modulated voltage between different RF bands. Understandably, the PMIC may have to generate the modulated voltage for different RF bands based on different configuration parameters. As such, it is desirable to switch the configuration parameters in a timely manner to ensure that the PMIC can adapt the modulated voltage within the very short voltage switching interval.

Embodiments of the disclosure relate to radio frequency (RF) band switching in a power management integrated circuit (PMIC). Herein, the PMIC is configured to adapt a modulated voltage to amplify an RF signal for transmission in different RF bands. In embodiments disclosed herein, a band-switching circuit in the PMIC is configured to receive a band-switching indication to switch from a current RF band to a different RF band. Accordingly, the band-switching circuit can cause the PMIC to reload a corresponding set of parameters to thereby adapt the modulated voltage for the different RF band within a defined switching interval (e.g., <5 μs). As a result, the PMIC can be flexibly configured to adapt the modulated voltage between multiple RF bands under ever stringent switching delay requirements.

In one aspect, a PMIC is provided. The PMIC includes a voltage processing circuit. The voltage processing circuit is configured to generate a modulated voltage based on a first parameter set predefined for a first RF band and a second parameter set predefined for a second RF band different from the first RF band. The PMIC also includes a band-switching circuit. The band-switching circuit is configured to receive a band-switching indication to switch from a first one of the first RF band and the second RF band to a second one of the first RF band and the second RF band. The band-switching circuit is also configured to cause the voltage processing circuit to switch from generating the modulated voltage based on one of the first parameter set and the second parameter set predefined for the first one of the first RF band and the second RF band to generating the modulated voltage based on another one of the first parameter set and the second parameter set predefined for the second one of the first RF band and the second RF band within a defined switching interval.

In another aspect, a wireless device is provided. The wireless device includes one or more PMICs. Each of the one or more PMICs includes a voltage processing circuit. The voltage processing circuit is configured to generate a modulated voltage based on a first parameter set predefined for a first RF band and a second parameter set predefined for a second RF band different from the first RF band. Each of the one or more PMICs also includes a band-switching circuit. The band-switching circuit is configured to receive a band-switching indication to switch from a first one of the first RF band and the second RF band to a second one of the first RF band and the second RF band. The band-switching circuit is also configured to cause the voltage processing circuit to switch from generating the modulated voltage based on one of the first parameter set and the second parameter set predefined for the first one of the first RF band and the second RF band to generating the modulated voltage based on another one of the first parameter set and the second parameter set predefined for the second one of the first RF band and the second RF band within a defined switching interval.

In another aspect, a method for switching RF bands in a wireless device is provided. The method includes generating a modulated voltage based on a first parameter set predefined for a first RF band and a second parameter set predefined for a second RF band different from the first RF band. The method also includes receiving a band-switching indication to switch from a first one of the first RF band and the second RF band to a second one of the first RF band and the second RF band. The method also includes switching from generating the modulated voltage based on one of the first parameter set and the second parameter set predefined for the first one of the first RF band and the second RF band to generating the modulated voltage based on another one of the first parameter set and the second parameter set predefined for the second one of the first RF band and the second RF band within a defined switching interval.

Those skilled in the art will appreciate the scope of the present disclosure and realize additional aspects thereof after reading the following detailed description of the preferred embodiments in association with the accompanying drawing figures.

The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.

It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

It will be understood that when an element such as a layer, region, or substrate is referred to as being “on” or extending “onto” another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or extending “directly onto” another element, there are no intervening elements present. Likewise, it will be understood that when an element such as a layer, region, or substrate is referred to as being “over” or extending “over” another element, it can be directly over or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly over” or extending “directly over” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.

Relative terms such as “below” or “above” or “upper” or “lower” or “horizontal” or “vertical” may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes,” and/or “including” when used herein specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Embodiments of the disclosure relate to radio frequency (RF) band switching in a power management integrated circuit (PMIC). Herein, the PMIC is configured to adapt a modulated voltage to amplify an RF signal for transmission in different RF bands. In embodiments disclosed herein, a band-switching circuit in the PMIC is configured to receive a band-switching indication to switch from a current RF band to a different RF band. Accordingly, the band-switching circuit can cause the PMIC to reload a corresponding set of parameters to thereby adapt the modulated voltage for the different RF band within a defined switching interval (e.g., <5 μs). As a result, the PMIC can be flexibly configured to adapt the modulated voltage between multiple RF bands under ever stringent switching delay requirements.

1 FIG. 10 12 12 14 16 16 CC BAND-A BAND-B A B BAND-A BAND-B CC A B is a schematic diagram of an exemplary wireless communication circuitwherein a PMICis configured to quickly adapt a modulated voltage V(e.g., an envelope tracking voltage or an average power tracking voltage) between different RF bands based on different parameter sets. In an embodiment, the PMICincludes a band-switching circuitand a voltage processing circuit. As described in detail below, the different parameter sets (referred to interchangeably as “a first parameter set P” and “a second parameter set P” hereinafter) are predefined for the different RF bands (referred interchangeably as “a first RF band RFB” and “a second RF band RFB” hereinafter), respectively. Each of the first parameter set Pand the second parameter set Pcan include one or more parameters that will configure the voltage processing circuitto generate the modulated voltage Vfor a respective one of the first RF band RFBand the second RF band RFB.

A B A B 78 3 In a non-limiting example, the first RF band RFBcan be a time-division duplex (TDD) bandand the second RF band RFBcan be a frequency-division duplex (FDD) band, or vice versa. Understandably, the first RF band RFBand the second RF band RFBcan be any other RF band combinations as defined by regulatory authorities, industry groups, and/or standard organizations.

BAND-A BAND-B BAND-A BAND-B 18 14 12 18 20 22 The first parameter set Pand the second parameter set Pare preloaded into a memory circuit, which may be provided in the band-switching circuitor elsewhere in the PMIC. In an embodiment, the first parameter set Pand the second parameter set Pmay be preloaded into the memory circuitby a transceiver circuitover an RF front-end (RFFE) interfaceusing an RFFE extended register write command sequence as defined in the MIPI® Alliance RFFE specification.

BAND-A BAND-B BAND-A BAND-B A B CC BAND-A BAND-B BAND-A BAND-B A B CC 20 12 22 20 12 18 14 16 24 16 12 Notably, it can take as much as forty-five microseconds (45 μs) to load any of the first parameter set Pand the second parameter set Pfrom the transceiver circuitto the PMICover the RFFE interface. In this regard, if the first parameter set Por the second parameter set Pis transferred dynamically from the transceiver circuitto the PMICin response to a switch between the first RF band RFBand the second RF band RFB, it will not be possible to adapt the modulated voltage Vunder ever stringent switching delay requirements. In contrast, by preloading the first parameter set Pand the second parameter set Pinto the memory circuitbased on the embodiments disclosed herein, the band-switching circuitcan quickly reconfigure the voltage processing circuitbased on a selected one of the first parameter set Pand the second parameter set Pin response to receiving a band-switching indicationto switch from the first RF band RFBto the second RF band RFB, or vice versa. As a result, the voltage processing circuitcan adapt the modulated voltage Vwithin a defined switching interval (e.g., <5 μs), thus making it possible for the PMICto support inter-symbol voltage adaptation, such as voltage adaptation in between two adjacent orthogonal frequency division multiplexing (OFDM) symbols.

12 26 26 28 26 30 32 26 30 32 32 32 20 CC A CC B Herein, the PMICcan further include a first voltage outputA, a second voltage outputB, and a switch circuit. The first voltage outputA may be coupled to a first power amplifier circuitA configured to amplify a first RF signalA based on the modulated voltage Vfor transmission in the first RF band RFB. The second voltage outputB may be coupled to a second power amplifier circuitB configured to amplify a second RF signalB based on the modulated voltage Vfor transmission in the second RF band RFB. Both the first RF signalA and the second RF signalB are generated by the transceiver circuit.

28 16 26 16 26 30 26 32 30 26 32 BAND-A BAND-B BAND-A BAND-B BAND-A BAND-B CC A BAND-A BAND-B CC B In an embodiment, the switch circuitincludes a first switch Sand a second switch S. The first switch Sis coupled between the voltage processing circuitand the first voltage outputA and the second switch Sis coupled between the voltage processing circuitand the second voltage outputB. When the first switch Sis closed and the second switch Sis opened, the modulated voltage Vis provided to the first power amplifier circuitA via the first voltage outputA to thereby amplify the first RF signalA for transmission in the first RF band RFB. In contrast, when the first switch Sis opened and the second switch Sis closed, the modulated voltage Vis provided to the second power amplifier circuitB via the second voltage outputB to thereby amplify the second RF signalB for transmission in the second RF band RFB.

CC A B SEL SEL BAND-A BAND-B BAND-A BAND-B SEL BAND-A BAND-B 16 12 In this regard, adapting the modulated voltage Vin response to switching between the first RF band RFBand the second RF band RFBwould involve configuring the voltage processing circuitbased on a selected parameter set P(P∈(P, P) and toggling the first switch Sand the second switch Sappropriately. Moreover, the PMICmust complete loading the selected parameter set Pand toggling the first switch Sand the second switch Sall within the defined switching interval.

12 12 CC CC 2 FIG.A 2 FIG.A 1 FIG. 1 2 FIGS.andA In one embodiment, the PMICcan be configured to adapt the modulated voltage Vbased on a hot voltage switching scheme, as illustrated in. In this regard,is a graphic diagram illustrating a hot voltage switching scheme that can be employed by the PMICinto quickly adapt the modulated voltage V. Common elements betweenare shown therein with common element numbers and will not be re-described herein.

12 CC N N+1 N N+1 N Herein, the PMICis configured to adapt the modulated voltage Vin between two consecutive OFDM symbols S, S. For the purpose of distinction, the OFDM symbol Sis referred to interchangeably as a “present OFDM symbol” and the OFDM symbol S, which immediately succeeds the OFDM symbol S, is referred to interchangeably as a “future OFDM symbol.”

N A A CC BAND-A BAND-A BAND-B 30 32 16 26 16 26 In a non-limiting example, during the present OFDM symbol S, the first power amplifier circuitA is configured to amplify the first RF signalA for transmission in the first RF band RFB(RFBON). Accordingly, the modulated voltage Vis generated based on the first parameter set P, the first switch Sis closed to couple the voltage processing circuitto the first voltage outputA, and the second switch Sis opened to decouple the voltage processing circuitfrom the second voltage outputB.

N 0 A N B N+1 N+1 CC BAND-B BAND-B BAND-A BAND-B 14 24 12 During the present OFDM symbol S(e.g., at time T), the band-switching circuitreceives the band-switching indicationthat indicates a switch from the first RF band RFBin the present OFDM symbol Sto the second RF band RFBin the future OFDM symbol S. Understandably, during the future OFDM symbol S, the modulated voltage Vneeds to be generated based on the second parameter set P. Thus, as described earlier, the PMICmust complete reloading the second parameter set P, opening the first switch S, and closing the second switch Sall within the defined switching interval.

14 16 26 16 26 14 14 16 16 26 16 26 30 32 BAND-B BAND-A N+1 2 BAND-B BAND-B BAND-B 1 N+1 2 1 2 CC BAND-B BAND-A BAND-B B B As such, the band-switching circuitis configured to close the second switch Sand open the first switch Sconcurrently at a start (i.e., time Ti) of the future OFDM symbol Sto thereby decouple the voltage processing circuitfrom the first voltage outputA and couple the voltage processing circuitto the second voltage outputB. At time T, the band-switching circuitmust also complete reloading the second parameter set P. Depending on the exact size of the second parameter set P, the band-switching circuitmay start reloading the second parameter set Pat or prior to the start (i.e., time T) of the future OFDM symbol S. Hence, the time Tand Tdefine an actual switching interval, which must be less than or equal to the defined switching interval. Thus, at time T, the voltage processing circuitwill generate the modulated voltage Vbased on the second parameter set P, the first switch Sis opened to decouple the voltage processing circuitfrom the first voltage outputA, the second switch Sis closed to couple the voltage processing circuitto the second voltage outputB, and the second power amplifier circuitB is active to amplify the second RF signalB for transmission in the second RF band RFB(RFBON).

12 12 CC CC 2 FIG.B 2 FIG.B 1 FIG. 1 2 FIGS.andB In another embodiment, the PMICcan be configured to adapt the modulated voltage Vbased on a cold voltage switching scheme, as illustrated in.is a graphic diagram illustrating a cold voltage switching scheme that can be employed by the PMICinto quickly adapt the modulated voltage V. Common elements betweenare shown therein with common element numbers and will not be re-described herein.

12 34 CC N N+1 N N+1 N Herein, the PMICis configured to adapt the modulated voltage Vin between two adjacent OFDM symbols S, Sthat are separated by a band-switching gap(e.g., 5 μs). For the purpose of distinction, the OFDM symbol Sis referred interchangeably as a “present OFDM symbol” and the OFDM symbol S, which immediately succeeds the OFDM symbol S, is referred interchangeably as a “future OFDM symbol.”

N A A CC BAND-A BAND-A BAND-B 30 32 16 26 16 26 In a non-limiting example, during the present OFDM symbol S, the first power amplifier circuitA is configured to amplify the first RF signalA for transmission in the first RF band RFB(RFBON). Accordingly, the modulated voltage Vis generated based on the first parameter set P, the first switch Sis closed to couple the voltage processing circuitto the first voltage outputA, and the second switch Sis opened to decouple the voltage processing circuitfrom the second voltage outputB.

N 0 A 1 N BAND-A 1 N 1 BAND-A BAND-B CC A A B B 14 24 14 16 26 30 30 During the present OFDM symbol S(e.g., at time T), the band-switching circuitreceives the band-switching indicationthat indicates a switch-off of the first RF band RFBat an end (time T) of the present OFDM symbol S. Accordingly, the band-switching circuitopens the first switch Sat the end (time T) of the present OFDM symbol Sto decouple the voltage processing circuitfrom the first voltage outputA. Notably, at time T, both the first switch Sand the second switch Sare open and, as a result, none of the first power amplifier circuitA and the second power amplifier circuitB is receiving the modulated voltage V. In other words, there is no transmission in any of the first RF band RFB(RFBOFF) and the second RF band RFB(RFBOFF).

34 14 24 14 16 16 26 14 34 30 32 34 2 B CC BAND-B BAND-B BAND-B BAND-B 3 B B 3 N+1 During the band-switching gap(e.g., at time T), the band-switching circuitreceives the band-switching indicationthat indicates a switch-on of the second RF band RFB. Accordingly, the band-switching circuitstarts configuring the voltage processing circuitto generate the modulated voltage Vbased on the second parameter set Pand close the second switch Sto couple the voltage processing circuitto the second voltage outputB. Understandably, the band-switching circuitmust complete reloading the second parameter set Pand closing the second switch Sat or prior to an end (e.g., Time T) of the band-switching gapsuch that the second power amplifier circuitB can start amplifying the second RF signalB for transmission in the second RF band RFB(RFBON) at a start (e.g., Time T) of the future OFDM symbol S. Herein, the band-switching gapdefines the defined switching interval.

3 FIG. 1 FIG. 1 3 FIGS.and 14 is a schematic diagram providing an exemplary illustration of the band-switching circuitinconfigured according to an embodiment of the present disclosure. Common elements betweenare shown therein with common element numbers and will not be re-described herein.

14 36 38 40 36 42 1 42 44 46 1 46 42 1 42 12 40 24 42 1 42 18 46 1 46 SEL BAND-A BAND-B In an embodiment, the band-switching circuitincludes a register bank, an RFFE circuit, and a memory controller. The register bankincludes one or more control registers()-(X) and multiple configuration registersorganized into one or more parameter clusters()-(Y). Herein, the control registers()-(X) can be configured to store high level control information for the PMIC. As an example, the memory controllercan be configured to read the band-switching indicationout of the control registers()-(X) and control the memory circuitto load the selected parameter set Pamong the first parameter set Pand the second parameter set Pinto the parameter clusters()-(Y).

BAND-A BAND-B CC 48 1 48 40 48 1 48 46 1 46 48 1 48 46 1 46 16 48 1 48 46 1 46 In a non-limiting example, each of the first parameter set Pand the second parameter set Pcan include one or more parameter subsets()-(Y). In this regard, the memory controlleris configured to load each of the parameter subsets()-(Y) into a respective one of the parameter clusters()-(Y). In an embodiment, the parameter subsets()-(Y) can be loaded into the parameter clusters()-(Y) simultaneously to help reduce loading time. The voltage processing circuit, in turn, reads the parameter subsets()-(Y) from the parameter clusters()-(Y) and generates the modulated voltage Vaccordingly.

38 18 38 50 52 54 54 38 54 36 54 36 54 BAND-A BAND-B BAND-A BAND-B The RFFE circuitis configured to preload the first parameter set Pand the second parameter set Pinto the memory circuitbased on the RFFE extended register read/write command sequence. In a non-limiting example, the RFFE circuitincludes an RFFE finite-state-machine (FSM), a multiplexer (MUX), and a register map (REGMAP). The RFFE extended register read/write command sequence, as defined in the MIPI® Alliance RFFE specification, has an address space of two-hundred fifty-six (256) registers, which are labeled from REG_000 to REG_255 in the REGMAP. Herein, the RFFE circuitis configured to read or write the first parameter set Pand the second parameter set Pusing the last three registers REG_253, REG_254, and REG_255 in the REGMAP. In an embodiment, the register bankis part of the RFFE REGMAP. In other words, the register bankcan include any of the registers (except for the last three registers REG_253, REG_254, and REG_255) in the address space of the RFFE REGMAP.

BAND-A BAND-B ADDR DATA 18 18 40 18 Understandably, each of the first parameter set Pand the second parameter set Pneeds to be written into the memory circuitin multiple data bytes. In this regard, the register REG_254 may contain a write pointer indicating a starting address (denoted as W) of the multiple data bytes to be written into the memory circuit. The register REG_255, on the other hand, is overwritten by the multiple data bytes (denoted as RW). The memory controllerreads each of the data bytes from the register REG_255 and writes each of the data bytes sequentially into an appropriate location in the memory circuit.

BAND-A BAND-B DATA 18 18 18 To read each of the first parameter set Pand the second parameter set Pfrom the memory circuit, the register REG_253 may contain a read pointer indicating a starting address (denoted as RADDR) of the multiple data bytes to be read from the memory circuit. The register REG_255, in this regard, is overwritten by the data bytes (denoted as RW) read from the memory circuit.

22 54 52 38 52 14 Given that the RFFE interfaceis a serial data interface and each of the registers REG_000-REG_255 in the REGMAPis a multi-bit register, the MUXis configured to perform serial-to-parallel conversion during RFFE write and parallel-to-serial conversion during RFFE read. Given that the RFFE circuitdoes perform RFFE write and RFFE read simultaneously, it is thus possible to share the MUXbetween RFFE write and RFFE read to help reduce a footprint of the band-switching circuit.

10 56 12 12 12 1 FIG. 4 FIG. 1 FIG. 1 2 FIGS.andA The wireless communication circuitofcan be further configured to enable multiple-input, multiple-output (MIMO), dual-connectivity (DC), and/or licensed assisted access (LAA) operations. In this regard,is a schematic diagram of an exemplary wireless communication circuitincluding multiple PMICsA,B each configured in an identical fashion as the PMICin. Common elements betweenare shown therein with common element numbers and will not be re-described herein.

56 32 58 58 14 12 12 12 12 18 46 1 46 36 A CC BAND-A BAND-A 3 FIG. In one embodiment, the wireless communication circuitcan be configured to simultaneously amplify the first RF signalA using a pair of power amplifier circuitsA,C for simultaneous MIMO transmission in the first RF band RFB. In this regard, the voltage processing circuitin each of the PMICsA andB must simultaneously switch to generating the modulated voltage Vbased on the first parameter set P. In other words, each of the PMICsA andB must simultaneously load the first parameter set Pfrom the memory circuitininto the parameter clusters()-(Y) in the register bank.

56 32 58 58 14 12 12 12 12 18 46 1 46 36 B CC BAND-B BAND-B In another embodiment, the wireless communication circuitcan be configured to simultaneously amplify the second RF signalB using a pair of power amplifier circuitsB,D for simultaneous MIMO transmission in the second RF band RFB. In this regard, the voltage processing circuitin each of the PMICsA andB must simultaneously switch to generating the modulated voltage Vbased on the second parameter set P. In other words, each of the PMICsA andB must simultaneously load the second parameter set Pfrom the memory circuitinto the parameter clusters()-(Y) in the register bank.

56 32 32 58 58 58 58 58 58 58 58 12 12 12 12 12 12 12 12 18 46 1 46 36 A B CC BAND-A BAND-B BAND-A CC BAND-A BAND-B BAND-B BAND-A BAND-B In another embodiment, the wireless communication circuitcan be configured to simultaneously amplify the first RF signalA and the second RF signalB using the power amplifier circuitsA,B, the power amplifier circuitsA,D, the power amplifier circuitsB,C, or the power amplifier circuitsC,D for simultaneous DC or LAA transmission in the first RF band RFBand the second RF band RFB. In this regard, one of the PMICsA andB (e.g., PMICA) must switch to generating the modulated voltage Vbased on one of the first parameter set Pand the second parameter set P(e.g., the first parameter set P). Concurrently, another one of the PMICsA andB (e.g., PMICB) must switch to generating the modulated voltage Vbased on another one of the first parameter set Pand the second parameter set P(e.g., second parameter set P). Accordingly, each of the PMICsA andB must load a respective one of the first parameter set Pand the second parameter set Pfrom the respective memory circuitinto the parameter clusters()-(Y) in the respective register bank.

10 56 100 10 56 1 FIG. 4 FIG. 5 FIG. 1 FIG. 4 FIG. The wireless communication circuitofand the wireless communication circuitofcan be provided in a communication device to provide beamforming phase correction.is a schematic diagram of an exemplary communication devicewherein the wireless communication circuitofand the wireless communication circuitofcan be provided.

100 100 102 104 106 108 110 112 114 102 102 108 112 110 Herein, the communication devicecan be any type of communication device, such as mobile terminal, smart watch, tablet, computer, navigation device, access point, base station (e.g., eNB, gNB, etc.), and any other type of wireless communication device that support wireless communications, such as cellular, wireless local area network (WLAN), Bluetooth, Ultra-wideband (UWB), and near field communications. The communication devicewill generally include a control system, a baseband processor, transmit circuitry, receive circuitry, antenna switching circuitry, multiple antennas, and user interface circuitry. In a non-limiting example, the control systemcan be a field-programmable gate array (FPGA), as an example. In this regard, the control systemcan include at least a microprocessor(s), an embedded memory circuit(s), and a communication bus interface(s). The receive circuitryreceives radio frequency signals via the antennasand through the antenna switching circuitryfrom one or more base stations. A low noise amplifier and a filter cooperate to amplify and remove broadband interference from the received signal for processing. Downconversion and digitization circuitry (not shown) will then downconvert the filtered, received signal to an intermediate or baseband frequency signal, which is then digitized into one or more digital streams using analog-to-digital converter(s) (ADC).

104 104 The baseband processorprocesses the digitized received signal to extract the information or data bits conveyed in the received signal. This processing typically comprises demodulation, decoding, and error correction operations, as will be discussed on greater detail below. The baseband processoris generally implemented in one or more digital signal processors (DSPs) and application specific integrated circuits (ASICs).

104 102 106 112 110 112 112 106 108 For transmission, the baseband processorreceives digitized data, which may represent voice, data, or control information, from the control system, which it encodes for transmission. The encoded data is output to the transmit circuitry, where a digital-to-analog converter(s) (DAC) converts the digitally encoded data into an analog signal and a modulator modulates the analog signal onto a carrier signal that is at a desired transmit frequency or frequencies. A power amplifier will amplify the modulated carrier signal to a level appropriate for transmission, and deliver the modulated carrier signal to the antennasthrough the antenna switching circuitryto the antennas. The multiple antennasand the replicated transmit and receive circuitries,may provide spatial diversity. Modulation and processing details will be understood by those skilled in the art.

10 56 200 10 56 1 FIG. 4 FIG. 6 FIG. 1 FIG. 4 FIG. In an embodiment, the wireless communication circuitofand the wireless communication circuitofcan be configured to switch RF bands according to a process. In this regard,is a flowchart of an exemplary processfor switching RF bands in the wireless communication circuitofand the wireless communication circuitof.

200 202 200 24 204 200 206 CC BAND-A A BAND-B B A A B A B CC BAND-A BAND-B A B CC BAND-A BAND-B A B Herein, the processincludes generating the modulated voltage Vbased on the first parameter set Ppredefined for the first RF band RFBand the second parameter set Ppredefined for the second RF band RFBdifferent from the first RF band RFB(step). The processalso includes receiving the band-switching indicationto switch from a first one of the first RF band RFBand the second RF band RFBto a second one of the first RF band RFBand the second RF band RFB(step). The processalso includes switching from generating the modulated voltage Vbased on one of the first parameter set Pand the second parameter set Ppredefined for the first one of the first RF band RFBand the second RF band RFBto generating the modulated voltage Vbased on another one of the first parameter set Pand the second parameter set Ppredefined for the second one of the first RF band RFBand the second RF band RFBwithin a defined switching interval (step).

Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.