Resonance tunnel device

1. A semiconductor device comprising: a double barrier structure including a silicon thin plate having side walls and extending in a first direction, and a pair of first oxide films formed on the side walls of the silicon thin plate; and a second oxide film formed to cover the silicon thin plate, wherein the second oxide film has a first opening and a second opening, and a shortest distance between the first opening and the second opening in a second direction vertical to the first direction and parallel to a surface of the second oxide film is substantially equal to a width of the silicon thin plate in the second direction.

2. A resonance tunneling device comprising: a silicon thin plate having side walls and a width thin enough to serve as a quantum well; a pair of tunnel barriers formed on the side walls of the silicon thin plate; a pair of electrodes formed to sandwich the pair of tunnel barriers; and an oxide film formed to cover the silicon thin plate, wherein the oxide film has a first opening and a second opening, and a shortest distance between the first opening and the second opening in a second direction vertical to the first direction and parallel to a surface of the second oxide film is substantially equal to a width of the silicon thin plate in the second direction.