Legal claims defining the scope of protection, as filed with the USPTO.
1. A silicon substrate comprising: a p doped substrate region having an n Field Effect Transistor (NFET) thereon; and an n doped substrate region having a p Field Effect Transistor (PFET) thereon, wherein said NFET and said PFET each have depositions of a refractory metal less than 300 Angstroms deposited thereon.
2. The substrate of claim 1, wherein the refractory metal is tungsten.
3. The silicon substrate of claim 1, wherein the depositions on the p region and the n region are substantially equal.
Complete technical specification and implementation details from the patent document.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
Unknown
April 11, 2000
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