Integrated circuit dielectrics

1. An integrated circuit dielectric, comprising: (a) a porous hybrid organic-silica material filling at least a portion of a space between first and second conductors.

2. The dielectric of claim 1, wherein: (a) said material includes C--Si--O--Si--C bonds.

3. The dielectric of claim 2, wherein: (a) said material is a polymer with O--Si--A--Si--O bonds where A is an organic group.

4. The dielectric of claim 3, wherein: (a) said group A has the characteristic of the shortest path of carbon atoms between the two bonds to Si has at most 12 carbon atoms.

5. The dielectric of claim 4, wherein: (a) said group A is a (fluorinated) aromatic ring, C.sub.6 H.sub.n F.sub.4-n, where n is an integer in the range 0.ltoreq.n.ltoreq.4.

6. A method of integrated circuit dielectric formation, comprising: (a) coating a substrate with a solution of oligomers of hydrolyzed monomers of the general formula (RO).sub.3 Si--A--Si(OR).sub.3 where R is an alkyl group and A is an organic group; (b) processing said oligomers to form a porous hybrid organic-silica dielectric.