Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of forming a trench isolation region in a surface of a semiconductor substrate for the purpose of isolating active device areas, the method comprising the steps of: providing said semiconductor substrate containing active devices; forming a first oxide layer on the surface of said semiconductor substrate; forming a silicon nitride layer on said first oxide layer; removing portions of said silicon nitride layer and said first oxide layer to form an opening in said silicon nitride layer and said first oxide layer to expose a selected portion of the surface of said semiconductor substrate; etching said semiconductor substrate through said opening to form a trench in said semiconductor substrate; subjecting said first oxide layer to side etching through said openings to form a recess in said first oxide layer and, also, forming an exposed edge of said semiconductor substrate at the boundary with said trench; forming a second oxide layer over all exposed silicon surfaces including the inside of the trench and exposed edge of said semiconductor substrate at said boundary with said trench; subjecting said silicon nitride layer to isotropic etching which decreases the thickness of said silicon nitride layer and recesses the edge of the silicon nitride layer at said opening in said silicon nitride layer; forming a third oxide layer over all exposed surfaces, filling said trench in said semiconductor substrate; removing by CMP said third oxide layer, stopping in said silicon nitride layer, to leave a portion of said third oxide layer only in said trench, and to form a substantially planar surface between the remaining silicon nitride layer and the remaining third oxide layer; removing by etching the remaining silicon nitride layer; and removing the remaining first oxide layer on the surface of said semiconductor substrate, thereby forming a planarized oxide filled trench.
2. The method of claim 1, wherein said semiconductor substrate is silicon.
3. The method of claim 1, wherein said first oxide layer is silicon oxide formed by thermal oxidation in an oxygen-steam ambient, at a temperature between about 800.degree. and 1000.degree. C., to a thickness between about 50 and 500 Angstroms.
4. The method of claim 1, wherein said silicon nitride layer is formed by LPCVD or PECVD processes to a thickness between about 1000 and 3000 Angstroms.
5. The method of claim 1, wherein said side etching of said first oxide layer is performed using a buffered or dilute hydrofluoric acid solution in H.sub.2 O.
6. The method of claim 5, wherein said side etching of said first oxide layer recesses the edge of said first oxide a distance between about 30 and 300 Angstroms beyond the edge of said trench.
7. The method of claim 1, wherein said second oxide layer is formed by thermal oxidation in an oxygen-steam ambient, at a temperature between about 800.degree. and 1000.degree. C., to a thickness between about 100 and 500 Angstroms.
8. The method of claim 1, wherein said isotropic etching of said silicon nitride layer is performed using a hot phosphoric acid solution.
9. The method claim 8, wherein said isotropic etching of said silicon nitride layer recesses the edge of said silicon nitride layer a distance between about 200 and 600 Angstroms.
10. The method of claim 1, wherein said third oxide layer is silicon oxide deposited conformally by LPCVD or PECVD processes to a thickness between about 2000 and 10,000 Angstroms.
11. The method of claim 1, wherein said etching of the remaining silicon nitride layer is performed using hot phosphoric acid.
12. The method of claim 1, wherein removing the remaining first oxide layer on the surface of said semiconductor substrate is by etching using a buffered or dilute hydrofluoric acid solution in H.sub.2 O.
13. A method of forming a trench isolation region in a surface of a silicon substrate for the purpose of isolating active device areas, the method comprising the steps of: providing said silicon substrate containing active devices; forming a first oxide layer on the surface of said silicon substrate; forming a silicon nitride layer on said first oxide layer; removing portions of said silicon nitride layer and said first oxide layer to form an opening in said silicon nitride layer and said first oxide layer to expose a selected portion of the surface of said silicon substrate; etching said silicon substrate through said opening to form a trench in said silicon substrate; subjecting said first oxide layer to side etching through said openings to form a recess in said first oxide layer and, also, forming an exposed edge of said silicon substrate at the boundary with said trench; forming a second oxide layer over all exposed silicon surfaces including the inside of the trench and exposed edge of said silicon substrate at said boundary with said trench; subjecting said silicon nitride layer to isotropic etching which decreases the thickness of said silicon nitride layer and recesses the edge of the silicon nitride layer at said opening in said silicon nitride layer; forming a third oxide layer over all exposed surfaces, filling said trench in said silicon substrate; removing by CMP said third oxide layer, stopping in said silicon nitride layer, to leave a portion of said third oxide layer only in said trench, and to form a substantially planar surface between the remaining silicon nitride layer and the remaining third oxide layer; removing by etching the remaining silicon nitride layer; and removing the remaining first oxide layer on the surface of said silicon substrate, thereby forming a planarized oxide filled trench.
14. The method of claim 13, wherein said first oxide layer is silicon oxide formed by thermal oxidation in an oxygen-steam ambient, at a temperature between about 800.degree. and 1000.degree. C., to a thickness between about 50 and 500 Angstroms.
15. The method of claim 13, wherein said silicon nitride layer is formed by LPCVD or PECVD processes to a thickness between about 1000 and 3000 Angstroms.
16. The method of claim 13, wherein said side etching of said first oxide layer is performed using a buffered or dilute hydrofluoric acid solution in H.sub.2 O.
17. The method of claim 16, wherein said side etching of said first oxide layer recesses the edge of said first oxide a distance between about 30 and 300 Angstroms beyond the edge of said trench.
18. The method of claim 13, wherein said second oxide layer is formed by thermal oxidation in an oxygen-steam ambient, at a temperature between about 800.degree. and 1000.degree. C., to a thickness between about 100 and 500 Angstroms.
19. The method of claim 13, wherein said isotropic etching of said silicon nitride layer is performed using hot phosphoric acid.
20. The method claim 19, wherein said isotropic etching of said silicon nitride layer recesses the edge of said silicon nitride layer a distance between about 200 and 600 Angstroms.
21. The method of claim 13, wherein said third oxide layer is silicon oxide deposited conformally by LPCVD or PECVD processes to a thickness between about 2000 and 10,000 Angstroms.
22. The method of claim 13, wherein said etching of the remaining silicon nitride layer is performed using hot phosphoric acid.
23. The method of claim 13, wherein removing the remaining first oxide layer on the surface of said semiconductor substrate is by etching using a buffered or dilute hydrofluoric acid solution in H.sub.2 O.
Complete technical specification and implementation details from the patent document.
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Unknown
June 13, 2000
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